TW201721163A - 識別製程拐點之技術 - Google Patents

識別製程拐點之技術 Download PDF

Info

Publication number
TW201721163A
TW201721163A TW105129442A TW105129442A TW201721163A TW 201721163 A TW201721163 A TW 201721163A TW 105129442 A TW105129442 A TW 105129442A TW 105129442 A TW105129442 A TW 105129442A TW 201721163 A TW201721163 A TW 201721163A
Authority
TW
Taiwan
Prior art keywords
output frequency
integrated circuit
inflection point
aro1
aro2
Prior art date
Application number
TW105129442A
Other languages
English (en)
Chinese (zh)
Inventor
溥瑜
吉比 山姆森
肯德里克 荷伊 良 袁
Original Assignee
高通公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 高通公司 filed Critical 高通公司
Publication of TW201721163A publication Critical patent/TW201721163A/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • G01R31/3004—Current or voltage test
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
TW105129442A 2015-09-25 2016-09-10 識別製程拐點之技術 TW201721163A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562232486P 2015-09-25 2015-09-25
US15/015,547 US10191106B2 (en) 2015-09-25 2016-02-04 Techniques to identify a process corner

Publications (1)

Publication Number Publication Date
TW201721163A true TW201721163A (zh) 2017-06-16

Family

ID=56990952

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105129442A TW201721163A (zh) 2015-09-25 2016-09-10 識別製程拐點之技術

Country Status (9)

Country Link
US (1) US10191106B2 (enExample)
EP (1) EP3353561B1 (enExample)
JP (1) JP2019500575A (enExample)
KR (1) KR20180056761A (enExample)
CN (1) CN108027402B (enExample)
BR (1) BR112018006092A2 (enExample)
CA (1) CA2997532A1 (enExample)
TW (1) TW201721163A (enExample)
WO (1) WO2017053006A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10394982B2 (en) 2014-02-26 2019-08-27 International Business Machines Corporation Partial parameters and projection thereof included within statistical timing analysis
CN114639610B (zh) * 2020-12-15 2024-06-07 长鑫存储技术有限公司 工艺角检测电路与工艺角检测方法
CN114138726B (zh) * 2021-11-12 2025-09-09 国微集团(深圳)有限公司 一种针对存在相邻边均相互垂直的多边形的gdsii版图数据的处理方法
CN114414999A (zh) * 2022-02-28 2022-04-29 北京智芯微电子科技有限公司 一种芯片工艺角检测电路、方法和芯片
TWI829433B (zh) 2022-11-16 2024-01-11 創意電子股份有限公司 晶片特性量測方法、測試裝置以及非暫態電腦可讀取媒體

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0653843A3 (en) * 1993-11-17 1996-05-01 Hewlett Packard Co CMOS circuits with adaptive voltage threshold.
US5486786A (en) 1994-08-09 1996-01-23 Lsi Logic Corporation Process monitor for CMOS integrated circuits
US5631596A (en) 1994-08-09 1997-05-20 Lsi Logic Corporation Process monitor for CMOS integrated circuits
US6850075B1 (en) * 2000-12-22 2005-02-01 Cypress Semiconductor Corp. SRAM self-timed write stress test mode
US7126365B2 (en) * 2002-04-16 2006-10-24 Transmeta Corporation System and method for measuring negative bias thermal instability with a ring oscillator
US6894528B2 (en) * 2002-09-17 2005-05-17 Sun Microsystems, Inc. Process monitor based keeper scheme for dynamic circuits
JP2006041951A (ja) * 2004-07-27 2006-02-09 Fujitsu Ltd プロセスばらつき検知装置およびプロセスばらつき検知方法
US7330080B1 (en) 2004-11-04 2008-02-12 Transmeta Corporation Ring based impedance control of an output driver
US7627839B1 (en) 2005-11-14 2009-12-01 National Semiconductor Corporation Process corner indicator and estimation circuit
US20090027131A1 (en) * 2007-07-25 2009-01-29 Shingo Suzuki Ring oscillators for cmos transistor beta ratio monitoring
JP5452983B2 (ja) * 2009-06-03 2014-03-26 株式会社メガチップス プロセスモニタ回路およびプロセス特性の判定方法
WO2011027553A1 (ja) 2009-09-07 2011-03-10 日本電気株式会社 経年劣化診断装置、経年劣化診断方法
JP5529555B2 (ja) 2010-01-20 2014-06-25 ルネサスエレクトロニクス株式会社 半導体集積回路、動作電圧制御方法
TWI422847B (zh) * 2010-09-01 2014-01-11 Univ Nat Chiao Tung 全晶片上寬工作電壓溫度製程電壓的感測系統
US8441310B2 (en) * 2010-12-07 2013-05-14 Broadcom Corporation Power control based on dual loop with multiple process detection circuits
JP5226094B2 (ja) * 2011-02-23 2013-07-03 株式会社半導体理工学研究センター 半導体記憶装置
US8954764B2 (en) 2012-03-05 2015-02-10 Csr Technology Inc. Method and apparatus for dynamic power management
US8801281B1 (en) 2012-05-24 2014-08-12 Pixelworks, Inc. On-chip temperature detection using an oscillator
KR20140023726A (ko) * 2012-08-17 2014-02-27 에스케이하이닉스 주식회사 반도체 장치, 반도체 시스템 및 그의 모니터링 방법
US9112484B1 (en) * 2012-12-20 2015-08-18 Mie Fujitsu Semiconductor Limited Integrated circuit process and bias monitors and related methods
US8976574B2 (en) * 2013-03-13 2015-03-10 Qualcomm Incorporated Process corner sensor for bit-cells
JP2017079336A (ja) * 2014-01-31 2017-04-27 国立大学法人東北大学 サイドチャネル攻撃の検知装置、サイドチャネル攻撃の検知装置によるサイドチャネル攻撃の検知方法
CN104101827B (zh) * 2014-06-25 2016-08-31 东南大学 一种基于自定时振荡环的工艺角检测电路
KR102298158B1 (ko) * 2014-08-25 2021-09-03 삼성전자주식회사 반도체 장치와 이를 포함하는 위상 동기 회로

Also Published As

Publication number Publication date
CN108027402A (zh) 2018-05-11
CN108027402B (zh) 2020-06-16
BR112018006092A2 (pt) 2018-10-16
WO2017053006A1 (en) 2017-03-30
US20170089974A1 (en) 2017-03-30
JP2019500575A (ja) 2019-01-10
US10191106B2 (en) 2019-01-29
EP3353561B1 (en) 2019-09-18
EP3353561A1 (en) 2018-08-01
KR20180056761A (ko) 2018-05-29
CA2997532A1 (en) 2017-03-30

Similar Documents

Publication Publication Date Title
US8575993B2 (en) Integrated circuit with pre-heating for reduced subthreshold leakage
CN108027402B (zh) 识别工艺拐点的技术
US8456247B2 (en) Monitoring negative bias temperature instability (NBTI) and/or positive bias temperature instability (PBTI)
JP2010087275A (ja) 半導体集積回路および電子機器
US10262985B2 (en) Circuits and methods for lowering leakage in ultra-low-power MOS integrated circuits
KR102413192B1 (ko) Nbti 또는 pbit를 모니터링하는 테스트 회로
CN107210297A (zh) 中心偏离栅极切割
Kerber et al. Assessing device reliability margin in scaled CMOS technologies using ring oscillator circuits
CN109001582B (zh) 泄漏电流测量电路、集成电路及其系统
Rzepa et al. Reliability and variability-aware DTCO flow: Demonstration of projections to n3 FinFET and nanosheet technologies
CN101795126B (zh) 用于表征工艺变化的系统和方法
US9319034B2 (en) Slew based process and bias monitors and related methods
US20120146672A1 (en) Performance monitor with memory ring oscillator
US8413094B2 (en) Structure, design structure and process for increasing magnitude of device threshold voltage for low power applications
CN105027214A (zh) 用于调节存储器阵列的工作电压的系统和方法
US9514999B2 (en) Systems and methods for semiconductor line scribe line centering
US9171125B2 (en) Limiting skew between different device types to meet performance requirements of an integrated circuit
US9262569B2 (en) Balancing sensitivities with respect to timing closure for integrated circuits
Islam et al. Reconfigurable delay cell for area-efficient implementation of on-chip MOSFET monitor schemes
TW202014718A (zh) 用於閘極漏電偵測之感測器
TWI520488B (zh) 脈衝式閂鎖裝置及其脈衝式閂鎖器的脈衝信號的產生方法
Yasufuku et al. Investigation of determinant factors of minimum operating voltage of logic gates in 65-nm CMOS
Lou et al. Analysis of layout arrangement for CMOS oscillators to reduce overall variation on silicon
CN104967446B (zh) 一种环形振荡器
US11165416B2 (en) Duty cycle and skew measurement and correction for differential and single-ended clock signals