TW201712750A - 電漿處理裝置及基板剝離檢測方法 - Google Patents
電漿處理裝置及基板剝離檢測方法 Download PDFInfo
- Publication number
- TW201712750A TW201712750A TW105115175A TW105115175A TW201712750A TW 201712750 A TW201712750 A TW 201712750A TW 105115175 A TW105115175 A TW 105115175A TW 105115175 A TW105115175 A TW 105115175A TW 201712750 A TW201712750 A TW 201712750A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- plasma
- conductive member
- mounting table
- plasma processing
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 184
- 238000012545 processing Methods 0.000 title claims abstract description 88
- 238000001514 detection method Methods 0.000 title description 7
- 238000001179 sorption measurement Methods 0.000 claims description 23
- 230000008859 change Effects 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 238000012544 monitoring process Methods 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 238000009832 plasma treatment Methods 0.000 claims description 9
- 230000002159 abnormal effect Effects 0.000 abstract description 30
- 239000007789 gas Substances 0.000 description 46
- 238000012546 transfer Methods 0.000 description 32
- 238000001020 plasma etching Methods 0.000 description 18
- 238000010891 electric arc Methods 0.000 description 14
- 230000007246 mechanism Effects 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000001939 inductive effect Effects 0.000 description 7
- 239000011148 porous material Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012966 insertion method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/42—Measurement or testing during manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015109641A JP2016225439A (ja) | 2015-05-29 | 2015-05-29 | プラズマ処理装置及び基板剥離検知方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201712750A true TW201712750A (zh) | 2017-04-01 |
Family
ID=57453108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105115175A TW201712750A (zh) | 2015-05-29 | 2016-05-17 | 電漿處理裝置及基板剝離檢測方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2016225439A (ja) |
| KR (1) | KR20160140420A (ja) |
| CN (1) | CN106206234A (ja) |
| TW (1) | TW201712750A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI771470B (zh) * | 2017-09-20 | 2022-07-21 | 美商應用材料股份有限公司 | 具有電浮電源供應的基板支撐件 |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020142536A (ja) * | 2017-06-28 | 2020-09-10 | 日立オートモティブシステムズ株式会社 | サスペンション制御装置 |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| CN109872965B (zh) * | 2017-12-04 | 2022-01-11 | 北京北方华创微电子装备有限公司 | 一种承载装置和反应腔室 |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| JP7020311B2 (ja) * | 2018-06-14 | 2022-02-16 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| JP7052584B2 (ja) * | 2018-06-15 | 2022-04-12 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| CN109490721A (zh) | 2018-09-11 | 2019-03-19 | 惠科股份有限公司 | 一种监控装置和监控方法 |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| WO2020154310A1 (en) | 2019-01-22 | 2020-07-30 | Applied Materials, Inc. | Feedback loop for controlling a pulsed voltage waveform |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| JP2020177785A (ja) * | 2019-04-17 | 2020-10-29 | 日本電産株式会社 | プラズマ処理装置 |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US11984306B2 (en) | 2021-06-09 | 2024-05-14 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4323021B2 (ja) * | 1999-09-13 | 2009-09-02 | 株式会社エフオーアイ | プラズマ処理装置 |
| JP4905304B2 (ja) * | 2007-09-10 | 2012-03-28 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ処理方法及び記憶媒体 |
| KR20100121980A (ko) * | 2009-05-11 | 2010-11-19 | 엘아이지에이디피 주식회사 | 플라즈마 도핑 장비의 웨이퍼 모니터링 장치 및 방법 |
| JP5227264B2 (ja) * | 2009-06-02 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマ処理装置，プラズマ処理方法，プログラム |
| JP5689283B2 (ja) | 2010-11-02 | 2015-03-25 | 東京エレクトロン株式会社 | 基板処理方法及びその方法を実行するプログラムを記憶する記憶媒体 |
| JP6182375B2 (ja) * | 2013-07-18 | 2017-08-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
-
2015
- 2015-05-29 JP JP2015109641A patent/JP2016225439A/ja active Pending
-
2016
- 2016-05-17 TW TW105115175A patent/TW201712750A/zh unknown
- 2016-05-24 KR KR1020160063265A patent/KR20160140420A/ko active IP Right Grant
- 2016-05-27 CN CN201610364963.9A patent/CN106206234A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI771470B (zh) * | 2017-09-20 | 2022-07-21 | 美商應用材料股份有限公司 | 具有電浮電源供應的基板支撐件 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106206234A (zh) | 2016-12-07 |
| JP2016225439A (ja) | 2016-12-28 |
| KR20160140420A (ko) | 2016-12-07 |
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