TW201706688A - Polarizer and manufacturing method for polarizer - Google Patents

Abstract

A main object of the present invention is to provide a polarizer excellent in extinction ratio which solves a defect of a polarizer causing a chain damage to fine wires when a polarizer having a plurality of fine wires provided is placed on a photo alignment device and a defect that a foreign material is generated from the damaged fine wires. The object is attained by forming a light shielding film which shields ultraviolet light in an outside of a polarizing region where the fine wires are provided of a polarizer, in which the plurality of fine wires are provided in parallel, on a transparent substrate having transparency to ultraviolet light.

Description

Polarizer and method of manufacturing polarizer

The present invention relates to a polarizer excellent in extinction ratio, a method of manufacturing the same, and an optical alignment device including the polarizer.

The liquid crystal display device generally has a structure in which an opposite substrate on which a driving element has been formed is disposed opposite to a color filter and sealed around, and a liquid crystal material is filled in a gap therebetween. Further, the liquid crystal material has a refractive index anisotropy, and since the voltage direction is applied to the liquid crystal material in a neat state and a state in which no voltage is applied, the pixel can be displayed by switching OFF/ON. Here, in the substrate sandwiching the liquid crystal material, an alignment film for aligning the liquid crystal material is provided.

Further, an alignment film is also used as the material of the retardation film used in the liquid crystal display device or the retardation film for 3D display.

It is known that, for example, a polymer material represented by polyimine is used as the alignment film, and the polymer material is subjected to a rubbing treatment by rubbing with a cloth or the like to have an alignment restricting force.

However, the alignment film to which the alignment restriction force is imparted by such a polishing treatment may have a cloth or the like. The problem of becoming a foreign object and remaining.

On the other hand, the alignment film which exhibits the alignment regulating force by the linearly polarized light, that is, the photo-alignment film, can impart the alignment regulating force without performing the polishing treatment by the cloth or the like as described above, so that there is no cloth or the like. In the past few years, it has attracted much attention in the past.

Such a linear polarized light irradiation method capable of imparting an alignment regulating force to a photo-alignment film is generally a method of performing exposure via a polarizer. In the polarizer, a plurality of thin wires are arranged in parallel, and aluminum and titanium oxide are used as the material constituting the thin wires (for example, Patent Document 1).

On the other hand, a method of forming a plurality of thin lines in parallel is known, and it is known to use a two-beam interference exposure method (for example, Patent Documents 2 and 3).

The two-beam interference exposure method is a technique in which a periodic light intensity distribution (interference pattern) generated by overlapping two laser light beams having a phase and an optical path is superimposed on a substrate.

For example, a metal layer such as aluminum is formed on the glass substrate, and the photoresist layer formed on the photoresist layer is subjected to double-beam interference exposure. The periodic photoresist pattern obtained by development is used as an etching mask, and the metal layer is etched. Then, by removing the photoresist pattern, a plurality of parallel-arranged thin wires made of a metal such as aluminum can be formed on the glass substrate.

Then, by cutting the glass substrate into a desired form of the polarizer, a polarizer having a thin line made of a metal such as aluminum can be obtained.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 4968165

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2013-145863

[Patent Document 3] Japanese Patent Laid-Open Publication No. 2007-178763

As the above-mentioned conventional polarizer, since a large-area glass substrate on which a thin line has been formed is cut by each thin line, and a polarizer of a desired size and shape is cut out, the polarizer obtained is as shown in Fig. 12(a), and the thin line is as shown in Fig. 12(a). 112 extends to the outer edge of the polarizer 110 (ie, the cut end).

Therefore, when the polarizer 110 is disposed in the optical alignment device, if the polarizer 110 is fixed and the region where the thin wire 112 is formed is sandwiched, the thin wire 112 may be damaged due to the interlocking portion. Or the problem of foreign matter generated from the broken thin line.

On the other hand, in order to eliminate the need to hold the portion where the thin wire is disposed, it is conceivable to limit the area in which the thin wire is arranged to the inner region of the region which is cut as the polarizer by a certain method, and to sandwich the region where the thin wire is not disposed. (ie, the area where the glass substrate is exposed) and the polarizer is fixed.

However, in this case, for example, as shown in FIG. 12(b), the polarizer 120 has an area outside the region where the thin line 122 is disposed, and is a region where the glass substrate 121 is exposed, because the region exposed from the glass substrate 121 is not only incident light. The P wave component will penetrate, and even the S wave component will penetrate, which may cause a problem that the extinction ratio is greatly reduced.

In addition, the "extinction ratio" means a polarizing component (S) with respect to the parallel line. Wave) transmittance (S wave component in the emitted light / S wave component in the incident light, hereinafter also referred to as "S wave transmittance"), and the polarization component (P wave) transmittance perpendicular to the thin line (injection) The P-wave component in the light/the P-wave component in the incident light, hereinafter also referred to as the "P-wave transmittance" ratio (P-wave transmittance/S-wave transmittance).

For example, a polarizer having a polarization characteristic of a P wave transmittance of 50% and an S wave transmittance of 1% has an extinction ratio of 50, but when a polarizer is formed in a region where the glass substrate is exposed, and a P wave When both the transmittance and the S-wave transmittance increase by 1%, the extinction ratio (ie, the ratio of the P-wave transmittance/S-wave transmittance) becomes (50+1)/(1+1)=25.5. The extinction ratio is reduced to approximately half.

The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a problem in which, when the polarizer is disposed in the optical alignment device, the problem of breakage of the fine wire caused by the chain breakage and the occurrence of foreign matter from the damaged thin wire portion can be eliminated. A polarizer with excellent extinction ratio.

As a result of various studies, the inventors have found that the above problem can be solved by forming a light-shielding film that shields ultraviolet light from the outside of the polarizing region disposed on the thin line, and the present invention has been completed.

In other words, the polarizer of the present invention is a polarizer in which a plurality of thin wires are arranged in parallel on a transparent substrate having transparency to ultraviolet light, wherein the ultraviolet light is shielded from the outside of the polarized region where the thin wires are arranged. Sunscreen.

Further, in the polarizer of the present invention, the light shielding film is formed along one side constituting the outer edge of the polarizing region.

Further, in the polarizer of the present invention, the light shielding film is formed on the outer circumference of the polarizing region.

Furthermore, in the polarizer of the present invention, a character, a mark, or an alignment mark is formed in the light shielding film.

Further, in the polarizer of the present invention, the character, the symbol, or the alignment mark has a configuration in which a plurality of thin lines are arranged in parallel.

Furthermore, in the polarizer of the present invention, the S wave transmittance value of the ultraviolet light by the character, the mark, or the alignment mark is transmitted to the S wave of the ultraviolet light in the polarized region. The rate is the same or smaller than the S-wave transmittance value of the above-mentioned ultraviolet light in the above-mentioned polarizing region.

Further, in the polarizer of the present invention, the light shielding film is connected to the thin wire.

Further, in the polarizer of the present invention, the material constituting the light shielding film contains a material constituting the thin line.

Further, in the polarizer of the present invention, the material constituting the light shielding film is made of a material containing molybdenum telluride.

Furthermore, the method for producing a polarizer of the present invention is a method for manufacturing a polarizer including a plurality of thin wires and a light shielding film for shielding the ultraviolet light on a transparent substrate having transparency to ultraviolet light, including a step of preparing a laminate having a first material layer on the transparent substrate; a step of forming a photoresist layer on the first material layer; and processing the photoresist layer to form a thin line pattern and a light shielding film pattern a step of patterning the photoresist; and using the photoresist pattern as an etching mask and etching the first material layer.

Furthermore, in the method of manufacturing a polarizer of the present invention, the photoresist layer is formed of a positive electron beam resist; and the step of forming the photoresist pattern having the thin line pattern and the light shielding film pattern includes : a step of irradiating an electron beam to a photoresist layer located at a pattern portion where the line and the space pattern constituting the thin line pattern are formed.

Further, the optical alignment device of the present invention is a light alignment device that polarizes ultraviolet light and irradiates the light alignment film, and includes the polarizer, and irradiates light that penetrates the polarized region of the polarizer to The above light alignment film.

Further, the optical alignment device according to the present invention includes means for moving the optical alignment film, and the polarizer is provided in plural directions orthogonal to a moving direction of the optical alignment film and a moving direction of the optical alignment film. And arranging the plurality of the boundary portions between the adjacent plurality of polarizers in the direction orthogonal to the moving direction of the optical alignment film so as not to be continuously connected in the moving direction of the optical alignment film Polarizer.

The polarizer provided by the present invention shields the incident ultraviolet light parallel to the polarization direction of the thin line, and shields the polarizer that is perpendicular to the polarization direction of the thin line, and penetrates the ultraviolet light. a plurality of the thin wires are arranged in parallel on the substrate, and a light shielding film that shields the ultraviolet light from the outer side of the thin line region in the region where the thin wires are arranged is provided, and an edge forming direction of the inner edge side of the light shielding film is formed with the thin line The long sides are parallel or perpendicular.

According to the invention, the light shielding film is formed on the outer side of the thin line region, and when the polarizer is disposed in the optical alignment device, the region in which the light shielding film is formed can be sandwiched. In other words, in the polarizer, when the thin line region in which the thin line arrangement region is not held, the polarizer can be fixed to the optical alignment device, so that the problem of breakage of the fine line caused by the interlocking of the nip portion can be released. A bad condition occurs in the broken thin line portion.

Further, as described above, since the light shielding film is formed on the outer circumference of the thin line region in the region where the thin line is disposed, in the polarizer, the incident light (especially the S wave component of the incident light) can be prevented from penetrating from the outer region of the thin line region. It can suppress the bad situation that the extinction ratio is greatly reduced.

Further, the reason is that the edge on the inner edge side of the light shielding film is parallel or perpendicular to the longitudinal direction of the thin line, whereby the interval between the thin line region and the light shielding film can be easily reduced, and a high extinction ratio can be obtained. .

In the present invention, the second thin line region of the region where the thin wires are arranged may be formed on the outer side of the light shielding film. If the outer edge of the light shielding film is disposed on the inner side of the outer edge of the polarizer, and the region from the outer edge of the light shielding film to the outer edge of the polarizer also has a second thin line region in which the thin line is disposed, the polarized light is to be polarized. When the plurality of sheets are arranged in a planar arrangement on the light alignment device, the light shielding films of the adjacent polarizers can be prevented from coming into contact with each other, resulting in expansion of the light shielding region. Big situation.

The optical alignment device according to the present invention includes a light alignment device including a plurality of polarizers, and the polarizer includes a light shielding film that is disposed in parallel with a plurality of thin wires and that is formed outside the thin line region where the thin wires are arranged; Each of the polarizers is disposed such that the polarizer disposed adjacent to each other does not include the light shielding film between the thin line regions.

According to the present invention, since the polarizers disposed adjacent to each other are disposed so as not to include the light shielding film between the thin line regions, the light shielding film is not provided between the polarizers, so that the polarizer can be formed. It has the function of a polarizer.

A method of mounting a polarizer according to the present invention is a method of mounting a plurality of polarizers on a polarizer of an optical alignment device, wherein the polarizer is provided with a plurality of thin wires arranged in parallel and formed in a region where the thin wires are arranged. a light shielding film outside the thin line region; the mounting method includes an alignment step of performing alignment of the polarizer by using an alignment mark formed on the light shielding film, and adjusting a polarization direction of the plurality of polarizers.

According to the present invention, by using the alignment marks formed on the light shielding film, the information of the position and angle of the thin line can be obtained with high precision, and the desired position and angle can be easily obtained.

According to the present invention, it is possible to provide a problem in which the breakage of the thin wire is caused to be broken when the polarizer is disposed in the optical alignment device, and a foreign matter is generated from the damaged thin wire portion. A polarizer that is excellent in the case of excellent extinction ratio.

Further, the optical alignment device including the polarizer of the present invention can efficiently perform the alignment restriction force to the optical alignment film, and the productivity can be improved.

1‧‧‧Transparent substrate

2‧‧‧ Thin line

3‧‧‧Polarized area

4‧‧‧Shade film

5‧‧‧ inner edge

6‧‧‧ outer edge

7‧‧‧ alignment mark

8‧‧‧ Thin line

10, 20‧‧‧ polarizer

10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10p, 10q, 10r, 10s‧‧‧ polarizer

31‧‧‧Polarized material layer

31P‧‧‧ polarized material pattern

32‧‧‧ Hard cover material layer

32P‧‧‧hard cover pattern

33‧‧‧Photoresist layer

34‧‧‧resist pattern

34a‧‧‧ Thin line pattern

34b‧‧‧Shade film pattern

40‧‧‧Electron beam

50, 60‧‧‧Light alignment device

51, 61‧‧‧ polarizer unit

52, 62‧‧‧ UV light

53, 63‧‧‧ mirror

54, 64‧‧‧ polarized light

55, 65‧‧‧Light alignment film

56, 66‧‧‧ workpiece

71, 72‧‧‧ Border Department

110, 120‧‧‧ polarizer

112, 122‧‧‧ fine lines

121‧‧‧ glass substrate

Fig. 1 is a view showing an example of a polarizer of the present invention, wherein (a) is a schematic plan view, and (b) is a cross-sectional view taken along line A-A of (a).

Fig. 2 is a plan view showing the planar shape of a light shielding film of the polarizer of the present invention shown in Fig. 1.

3(a) to 3(h) are diagrams showing another planar form of a light shielding film of a polarizer of the present invention.

Fig. 4 is a view showing another example of the polarizer of the present invention, (a) is a schematic plan view, and (b) is an enlarged view of the alignment mark of (a).

5(a) to 5(d) are schematic process diagrams showing an example of a method of manufacturing a polarizer of the present invention.

6(e) to 6(h) are schematic diagrams showing an example of a method of manufacturing the polarizer of the present invention, continued from Fig. 5.

Fig. 7 is a view showing an example of the configuration of an optical alignment device of the present invention.

Fig. 8 is a view showing another example of the configuration of the optical alignment device of the present invention.

Fig. 9 (a) to (d) are views showing an example of a configuration of a polarizer of the optical alignment device of the present invention.

Fig. 10 (a) and (b) are views showing another example of a configuration of a polarizer of the optical alignment device of the present invention.

Fig. 11 is a graph showing the results of measurement of polarization characteristics of the polarizer of Example 2.

12(a) and (b) are schematic plan views showing a conventional example of a polarizer.

Hereinafter, the polarizer, the method of manufacturing the polarizer, and the optical alignment device of the present invention The method of installing the polarizer will be described.

A. Polarizer

First, the polarizer of the present invention will be described.

The polarizer of the present invention is a polarizer in which a plurality of thin wires are arranged in parallel on a transparent substrate having transparency to ultraviolet light, wherein the ultraviolet light is shielded from the outside of the polarizing region where the thin wires are disposed. Light-shielding film.

Fig. 1 is a view showing an example of a polarizer of the present invention, (a) is a schematic plan view, and (b) is a cross-sectional view taken along line A-A of Fig. 1.

As shown in FIG. 1, the polarizer 10 is provided with a plurality of thin wires 2 arranged in parallel on the transparent substrate 1, and a light shielding film 4 is formed on the outer periphery of the polarizing region 3 where the thin wires 2 are arranged.

With such a configuration, when the polarizer 10 is disposed in the optical alignment device, the region where the light shielding film 4 is formed can be sandwiched.

In other words, in the polarizer 10, the polarizer 10 can be fixed to the optical alignment device without sandwiching the region (the polarization region 3) formed by the thin wire 2, so that the breakage of the thin wire 2 caused by the interlocking portion can be released. Adverse conditions, and the occurrence of foreign matter from the damaged thin line.

Further, as described above, since the light shielding film 4 is formed on the outer circumference of the polarizing region 3 where the thin line 2 is disposed, it is possible to suppress penetration of incident light from the outer region of the polarizing region 3 in the polarizer 10 (especially, the incident light S) Wave component), 俾 can suppress the bad situation that the extinction ratio is greatly reduced.

Hereinafter, each configuration of the polarizer of the present invention will be described in detail.

Transparent substrate

The transparent substrate 1 is not particularly limited as long as it can stably support the thin wire 2 and is excellent in ultraviolet light transmittance and less deteriorated by exposure light. For example, optically ground synthetic quartz glass, fluorite, calcium fluoride or the like can be used, and among them, synthetic quartz glass is preferably used. The reason is that the quality is stable, and even if short-wavelength light (that is, high-energy exposure light) is used, the deterioration is still small.

The thickness of the transparent substrate 1 can be appropriately selected in accordance with the use and size of the polarizer 10.

2. Thin line

The thin line 2 is formed in the polarizer 10 so as to efficiently penetrate the P wave component of the incident light and suppress the S wave component transmittance of the incident light, and is formed in a linear shape on the transparent substrate 1 and Parallel configuration.

The material constituting the thin wire 2 is provided before the desired extinction ratio and P wave transmittance can be obtained, and the rest is not particularly limited, and may include, for example, aluminum, titanium, molybdenum, niobium, chromium, lanthanum, cerium, lanthanum, A material such as a metal or an alloy of ruthenium, nickel, gold, silver, platinum, palladium, rhodium, cobalt, manganese, iron, or indium, and any of these oxides, nitrides, or oxynitrides. Among them, it is preferably composed of a material containing molybdenum telluride. The reason is that even in the short wavelength of the ultraviolet region, the extinction ratio and the P wave transmittance are excellent, and the heat resistance and the light resistance are also excellent.

The material containing molybdenum molybdenum may be, for example, molybdenum molybdenum (MoSi), molybdenum molybdenum oxide (MoSiO), molybdenum telluride nitride (MoSiN), molybdenum oxynitride oxynitride (MoSiON) or the like.

Further, the thin wire 2 may be composed of a plurality of materials, and may also be composed of a plurality of layers of different materials.

The thickness of the thin wire 2 is raised before the desired extinction ratio and P wave transmittance can be obtained, and the rest is not particularly limited. For example, it is preferably 60 nm or more, and more preferably in the range of 60 nm to 160 nm, and particularly preferably 80 nm. In the range of ~140nm. The reason is that both the extinction ratio and the P wave transmittance are excellent by being within the above range.

Further, the thickness of the thin line refers to the maximum thickness in the vertical direction in the longitudinal direction and the width direction of the thin line, and the thickness of all the layers when the thin line is composed of a plurality of layers.

Furthermore, the thickness of the thin wires may also be different in thickness in a polarizer, but is usually formed by the same thickness.

The number and length of the thin wires 2 are provided before the desired extinction ratio and P wave transmittance can be obtained, and the rest are not particularly limited, and can be appropriately set in accordance with the use of the polarizer 10.

The pitch of the thin line 2 (P ₁ shown in Fig. 1(a)) is raised before the desired extinction ratio and P wave transmittance can be obtained, and the rest is not particularly limited, although the wavelength of light used for linear polarization generation is used. The difference may be, for example, 60 nm or more and 140 nm or less, and preferably 80 nm or more and 120 nm or less, more preferably 90 nm or more and 110 nm or less. The reason is that the above-described pitch is excellent in both the extinction ratio and the P wave transmittance.

Further, the pitch of the thin lines is the maximum pitch of the pitch between the adjacent thin lines in the width direction, and when the thin line is composed of a plurality of layers, it means the pitch including all the layers.

Furthermore, the pitch of the above-mentioned fine lines may include different pitches in a polarizer, but they are usually formed at the same pitch.

The duty ratio of the above-mentioned fine lines [that is, the ratio of the width of the thin line to the pitch (width/pitch)] is raised before the desired extinction ratio and P-wave transmittance can be obtained, and the rest is not special. The limit may be, for example, 0.3 or more and 0.6 or less, and more preferably 0.35 or more and 0.45 or less. The reason is that, by the above-described work ratio, it is possible to obtain a polarizer having excellent extinction ratio in a state of high P wave transmittance, and it is possible to easily process thin wires.

Further, the width of the thin line refers to the length in the vertical direction of the longitudinal direction of the thin line in the plan view, and the case where the thin line is composed of a plurality of layers means the width of all the layers.

Furthermore, the width of the thin lines may be different in a polarizer, but is usually formed by the same width.

3. Polarized area

In the polarizer 10 shown in FIG. 1, the polarizing region 3 is surrounded by a light shielding film 4, and the thin line 2 is disposed in the polarizing region 3. In other words, the polarizing region 3 of the polarizer 10 shown in Fig. 1 is a region defined by the light shielding film 4 and belongs to a region through which incident light penetrates.

In the present invention, the polarizing region 3 may be larger than the region in which the thin wires 2 are disposed. More specifically, the thin line 2 may have a form in which the light shielding film 4 is not connected in the longitudinal direction (the Y direction shown in FIG. 1(a)).

Further, in the arrangement direction of the thin wires 2 (the vertical direction in the longitudinal direction of the thin line 2, that is, the X direction shown in FIG. 1(a)), the interval between the end thin wires 2 and the light shielding film 4 may be larger than the thin line 2 The size of each other. More specifically, in FIGS. 1(a) and 1(b), the distance P ₂ between the left edge of the right end thin line 2 and the inner edge side edge of the light shielding film 4 may be larger than the interval between the thin lines 2 P _{1 .} size of.

However, in order to obtain a high extinction ratio, the polarizer 10 shown in Fig. 1 is preferably used, and the thin wire 2 is connected to the light shielding film 4 in the longitudinal direction thereof. The reason is that in the polarizing region 3, the region where the thin wire 2 is not present can be made smaller, and the S wave component of the incident light can be more suppressed from penetrating.

Further, the interval between the end thin wires 2 and the light shielding film 4 in the arrangement direction of the thin wires 2 is preferably the same as the interval between the thin wires 2.

More specifically, in FIGS. 1(a) and 1(b), the distance P ₂ between the left edge of the right end thin line 2 and the inner edge side edge of the light shielding film 4 is preferably the interval P between the thin lines 2 and P. ₁ is the same size. Similarly, in Figs. 1(a) and 1(b), the interval between the right edge of the left end thin line 2 and the inner edge side edge of the light shielding film 4 is preferably the same as the interval P ₁ between the thin lines 2 size. The reason is to get a higher extinction ratio.

In the present invention, for example, by the step of forming the thin wires 2 and the step of forming the light shielding film 4, the end thin wires 2 and the light shielding film 4 in the direction in which the thin wires 2 are arranged can be arranged. The interval is set to be the same size as the interval between the thin wires 2. Further, the positional relationship between the light-shielding film 4 and the thin wire 2 can be made with high precision, and the edge direction of the light-shielding film 4 and the direction of the thin line 2 can be produced in parallel (or perpendicularly) with high precision.

In addition, as described above, when the thin film 2 is connected to the light shielding film 4, the heat accumulated in the thin wire 2 by the light irradiated to the polarizer can be dispersed in the light shielding film 4 and the antistatic effect can be obtained.

Further, when the light shielding film 4 is connected to the thin wire 2, in the manufacturing process of the polarizer 10, a fine photoresist pattern (thin line pattern) for forming the thin wire 2 can be connected to the light shielding film 4 for forming. The large-area photoresist pattern (light-shielding film pattern) can also suppress the occurrence of collapse or peeling of the fine photoresist pattern (thin line pattern) for forming the thin line 2 in the manufacturing step.

4. Sunscreen

The light shielding film 4 is formed outside the polarizing region 3, and can suppress penetration of incident light (particularly, an S wave component of incident light).

In the present invention, the light-shielding film 4 is preferably a pair of ultraviolet light having a wavelength of 240 nm or more and 380 nm or less, and has a light-shielding property of an optical density of 2.8 or more.

The reason is that the light-shielding film 4 has a high light-shielding property in a wavelength range of ultraviolet light which is irradiated to the light-aligning film to impart an alignment regulating force, and the polarizer excellent in the extinction ratio can be improved.

The material constituting the light-shielding film 4 is removed before the desired optical density can be obtained, and the rest is not particularly limited, and may include, for example, aluminum, titanium, molybdenum, niobium, chromium, niobium, tantalum, niobium, tantalum, nickel, gold. Metals or alloys such as silver, platinum, palladium, rhodium, cobalt, manganese, iron, indium, etc., and such A material of any of oxides, nitrides, or oxynitrides. Among them, a material which may contain, for example, molybdenum telluride is preferable.

When the material constituting the light-shielding film 4 is made of a material containing molybdenum molybdenum, when the thickness of the light-shielding film 4 is 60 nm or more, the ultraviolet light having a wavelength of 240 nm or more and 380 nm or less can have an optical density of 2.8 or more. Shading.

Further, the light shielding film 4 may be composed of a plurality of materials or a plurality of layers having different materials.

Further, the material constituting the light shielding film 4 preferably contains a material constituting the thin line 2.

The reason is that when the material constituting the light shielding film 4 contains the material constituting the thin wire 2, the apparatus and material used in the step of forming the thin wire 2 can be used for the step of forming the light shielding film 4, and the manufacturing cost can be reduced. Further, by the step of forming the thin wires 2 and the step of forming the light shielding film 4, the relative positional accuracy of the thin wires 2 and the light shielding film 4 can be improved.

Further, when both the material constituting the light-shielding film 4 and the material constituting the thin wire 2 are made of a material containing molybdenum-deposited molybdenum, the light-shielding film 4 can have high light-shielding property and excellent both extinction ratio and P-wave transmittance. Polarizer.

Next, the planar form of the light shielding film 4 will be described.

Fig. 2 is a plan view showing the planar shape of a light shielding film of the polarizer of the present invention shown in Fig. 1.

As shown in FIG. 2, the light shielding film 4 of the polarizer 10 has a frame shape of the inner edge 5 and the outer edge 6, and generally, the inner edge 5 of the light shielding film 4 is aligned with the outer edge of the polarizing region 3.

Furthermore, as shown in the polarizer 10 of FIG. 1, the outer edge 6 of the light shielding film 4 is usually associated with a polarizer. The outer edges of 10 are the same.

However, the present invention is not limited to the above-described embodiment. When the polarizer is disposed in the optical alignment device, the polarizer can be held in the region where the light shielding film 4 is formed, and the unnecessary S wave component can be suppressed from being pushed before being penetrated. Applicable to all.

For example, when a polarizer is attached to a light alignment device that irradiates a linearly polarized light toward a light alignment film, it is covered by a holding mechanism or the like near the outer edge of the polarizer, so that light from the vicinity of the outer edge of the polarizer is not irradiated with light. In the case of the alignment film, the outer edge 6 of the light shielding film 4 may be disposed further inward than the outer edge of the polarizer.

Further, in the polarizer region other than the region where the light shielding film 4 is formed, there is a form in which the thin wires 2 are formed (for example, a thin wire 2 is formed on the outer side of the outer edge 6 of the light shielding film 4). The region formed by the film 4 sandwiches the polarizer, and on the other hand, the thin wire 2 is formed in a region where the light shielding film is not formed, so that the unnecessary S wave component penetration can be suppressed, so that it can be applied to the polarizer of the present invention.

Fig. 3 is a view showing another planar form of a light shielding film of the polarizer of the present invention. In addition, in FIG. 3, the longitudinal direction of the thin line 2 is the up-and-down direction in the figure.

As described above, the light shielding film 4 of the present invention is formed outside the polarizing region 3, and can suppress penetration of incident light, particularly S-wave components of incident light.

Therefore, the planar form of the light-shielding film 4 of the present invention is not limited to the form in which the light-shielding film 4 is formed on the outer periphery of the polarizing region 3 as shown in FIG. 1, and various configurations can be adopted in accordance with the holding structure of the optical alignment device and the method of arranging the polarizer.

For example, as shown in FIGS. 3(a) and (b), it is also possible to form a region (polarized region 3) formed by the thin line 2. The side of the outer edge forms the form of the light shielding film 4.

In addition, the form shown in FIG. 3( a ) exemplifies that the longitudinal direction of the thin wire 2 and the longitudinal direction of the light shielding film 4 are the same direction, and the form shown in FIG. 3( b ) is the longitudinal direction of the thin wire 2 and the light shielding. The longitudinal direction of the film 4 is an example of an orthogonal relationship.

Further, the light shielding film 4 may be arranged in plural numbers. For example, as shown in FIGS. 3(c) and 3(d), the light shielding film 4 may be formed along a pair of opposite sides forming the outer edge of the region (polarized region 3) formed by the thin line 2.

Further, as shown in FIG. 3(e), the light shielding film 4 may be formed along the sides of the outer edge of the region (polarized region 3) formed by the thin line 2 and intersecting each other. Further, as shown in FIGS. 3(f) and 3(g), the light shielding film 4 may be formed along three sides of the outer edge of the region (polarized region 3) formed by the thin line 2.

Here, as described in the description of FIG. 2, in the present invention, the outer edge 6 of the light shielding film 4 may be disposed further inside than the outer edge of the polarizer 10. For example, as shown in FIG. 3(h), all four sides of the outer edge (the outer edge 6 shown in FIG. 2) of the light shielding film 4 may be disposed on the inner side of the outer edge of the polarizer, and although not shown, One of the four sides of the outer edge (the outer edge 6 shown in FIG. 2) of the light shielding film 4 may be disposed on the inner side of the outer edge of the polarizer.

Further, in the same manner as shown in Figs. 3(a) to (g), the outer edge of the light shielding film 4 may be provided on the inner side of the outer edge of the polarizer.

These conditions are preferably in the form of the thin line 2 formed in the region where the light shielding film 4 is not formed. The reason is that regardless of the form of the holding mechanism of the optical alignment device, etc., it is possible to suppress the The polarizer penetrates unwanted S-wave components.

In the embodiment shown in FIGS. 3(a) to 3(d), for example, when the polarizers are arranged in a plurality of planes in a planar arrangement in the optical alignment device, one of the light shielding films 4 is not formed in each of the polarizers. In an adjacent configuration, the light shielding film 4 does not affect the seam portion between the polarizers.

Further, for example, when the plurality of polarizers are arranged side by side in a state in which the outer edge portions are vertically overlapped, the light shielding film can be formed by overlapping the outer edge portions of the side where the light shielding film 4 is not formed. 4 does not affect the seam between the polarizers.

Further, as shown in FIGS. 3(e) to 3(h), when the light shielding film 4 is formed in both the parallel direction and the vertical direction of the thin line 2, the polarization direction is rotated by 90 degrees to be arranged. In the case of a light-aligning device, it is also possible to use the same polarizer without the need to integrate other polarizers.

Further, as shown in FIG. 3(h), if the outer edge of the light shielding film 4 is disposed on the inner side of the outer edge of the polarizer, and is formed from the outer edge of the light shielding film 4 to the outer edge of the polarizer. In the form of the thin line 2, when the polarizers are arranged in a plurality of planes in a planar arrangement on the optical alignment device, the light shielding regions are not enlarged by the contact of the respective light shielding films 4 of the adjacent polarizers.

Further, when a plurality of polarizers are disposed in the optical alignment device, the polarizers of the various forms shown in FIGS. 1 and 3 (a) to (h) may be used in combination.

Fig. 4 is a view showing another example of the polarizer of the present invention, (a) is a schematic plan view, and (b) is an enlarged view of the alignment mark of (a).

As shown in FIG. 4(a), the polarizer 20 is provided with an alignment mark 7 in the light shielding film 4 near the four corners.

In the present invention, characters, marks, or alignment marks may be formed in the light shielding film 4. For example, by forming characters, symbols, and the like in the light-shielding film 4, information on a related polarizer such as a model can be given. Moreover, it is also possible to use the orientation of the up, down, left and right, the front and back, and the rough alignment.

Further, as described above, in the present invention, by the step of forming the thin wires 2 and the step of forming the light shielding film 4, the relative positional accuracy of the thin wires 2 and the light shielding film 4 can be improved. Therefore, by forming the alignment mark 7 in the light shielding film 4, the position and angle information of the thin line 2 can be obtained from the alignment mark 7.

Further, in the optical alignment device that irradiates the optical alignment film with linearly polarized light, when the polarizer 20 is mounted, the alignment mark 7 can be used, and the position and angle of the thin wire 2 can be easily brought to the desired position and angle. .

In the present invention, the form of the alignment mark is not particularly limited, and various forms such as a cross type and an L shape may be used. However, it is preferable that the alignment mark is at least one of a parallel direction or a vertical direction in the direction of the thin line 2. Form an edge up. Further, it may have an edge at an angle of 45 degrees with respect to the direction of the thin line 2 in accordance with the use.

The number and arrangement of the alignment marks are not particularly limited, and the necessary number and necessary places can be set.

The above characters, symbols, or alignment marks may also be composed of materials different from the light shielding film 4. Further, a configuration may be adopted in which an opening 俾 is provided in the light shielding film 4 to expose the transparent substrate 1.

However, when the above-mentioned characters, symbols, or alignment marks have a configuration in which an opening is provided in the light-shielding film 4 to expose the transparent substrate 1, the extinction ratio can be suppressed from being lowered. Therefore, it is generally preferable to reduce the exposed area of the transparent substrate 1. The form.

On the other hand, in the present invention, a plurality of thin lines may be arranged in parallel with the character, the symbol, or the alignment mark.

For example, as shown in FIG. 4(b), the alignment mark 7 may be configured such that a plurality of thin lines 8 are arranged in parallel. Further, although not shown in the drawings, the above-described characters and symbols may be configured in the same manner to arrange a plurality of thin lines 8 in parallel. Further, the direction of the plurality of thin lines is preferably the same as the direction of the thin line of the polarized area.

Further, by the alignment mark 7 and the polarizer 20 having the above-described characters and symbols, the material, the thickness, the pitch, the work ratio, and the like of the thin wire 8 can be designed in such a manner as to achieve the desired extinction ratio. The function of shading or polarizing ultraviolet light can prevent the extinction ratio of the polarizer 20 from being lowered even if the alignment mark 7 is formed in the light shielding film 4 and the characters and symbols.

In the present invention, the material, the thickness, the pitch, the work ratio, and the like of the thin line 8 constituting the alignment mark 7, the character, and the symbol can be used as long as the desired S wave transmittance can be obtained, wherein the material of the thin line 8 and The thickness is preferably set to be the same as the material and thickness of the thin wires 2 disposed in the polarizing region 3, and the longitudinal direction, the pitch, and the duty ratio of the thin wires 8 are preferably set to be longer than the thin wires 2 disposed in the polarizing region 3. The side direction, spacing and work ratio are the same.

The reason is because even if the alignment mark 7, the above characters, and symbols are formed, the extinction ratio is not There will be changes, so that the number of alignment marks 7, the number of characters, and the number of marks can be more freely designed.

Further, in the polarizer of the present invention, the thin line 2 disposed in the polarizing region 3 is required to have a high extinction ratio, that is, the P wave transmittance is high and the S wave transmittance is low, and the above-described characters are formed in the light shielding film 4, The thin line 8 of the mark or alignment mark requires a lower S-wave penetration rate, but the relevant P-wave penetration rate does not necessarily require a high transmittance.

That is, the above-mentioned characters, symbols, or alignment marks must avoid the S-wave component of the incident light to the light alignment film, but the transmittance of the relevant P-wave component is as long as it can recognize the above-mentioned character, mark, or alignment mark. The level is high and does not necessarily require high penetration.

Therefore, in the present invention, for the ultraviolet light irradiated by the polarizer, the S wave transmittance value of the character, the mark, or the alignment mark is preferably the same as or smaller than the S wave transmittance of the polarized region 3. value.

B. Method of manufacturing polarizer

Next, a method of manufacturing the polarizer of the present invention will be described.

The method for producing a polarizer of the present invention is a method for manufacturing a polarizer comprising a plurality of thin wires and a light shielding film for shielding ultraviolet light on a transparent substrate having transparency to ultraviolet light, comprising: preparing a step of forming a laminate of the first material layer on the transparent substrate; a step of forming a photoresist layer on the first material layer; and processing the photoresist layer to form a photoresist having a thin line pattern and a light shielding film pattern a step of patterning; and using the photoresist pattern as an etch mask and performing an etching process on the first material layer.

In the present invention, by the step of forming the thin wires 2 and the step of forming the light shielding film 4, the manufacturing steps can be shortened, and the relative positional accuracy of the thin wires 2 and the light shielding film 4 can be improved.

Further, since the thin wire 2 and the light shielding film 4 are made of the same material, the manufacturing cost can be reduced.

Fig. 5 and Fig. 6 are schematic diagrams showing an example of a method of manufacturing the polarizer of the present invention.

For example, when the polarizer 10 is manufactured by the manufacturing method of the polarizer of the present invention, as shown in FIG. 5(a), first, it is prepared on the transparent substrate 1 in order to be formed of materials constituting the thin wire 2 and the light shielding film 4. The polarizing material layer 31 and the laminated body of the hard mask material layer 32 which functions as a hard mask when etching the polarizing material layer 31 are performed.

Further, in this example, the hard coat material layer 32 corresponds to the first material layer.

Next, a photoresist layer 33 is formed on the hard mask material layer 32 (Fig. 5(b)), and the electron beam 40 or the like (Fig. 5(c)) is irradiated for development or the like to form the thin line pattern 34a and the light shielding film pattern 34b. The photoresist pattern 34 (Fig. 5(d)).

In the present invention, for example, an electron beam drawing device used in the manufacture of a photomask for a semiconductor lithography can be used in the electron beam drawing device by forming the thin line pattern 34a and the light shielding film pattern 34b, the alignment mark, and the like in the same step. The relative position of these is controlled by high-precision positional accuracy management.

Next, the photoresist pattern 34 is used as an etching mask, and the hard mask material layer 32 is etched to form the hard mask pattern 32P (FIG. 6(e)). For example, when the material of the hard mask material layer 32 is made of chromium, it can be formed by dry etching using a mixed gas of chlorine and oxygen. Cover pattern 32P.

Next, the photoresist pattern 34 and the hard mask pattern 32P are used as an etching mask, and the polarizing material layer 31 is etched to form a polarizing material pattern 31P having the thin lines 2 and the light shielding film 4 (FIG. 6(f)). For example, when the material of the polarizing material layer 31 is molybdenum molybdenum, the polarizing material pattern 31P can be formed by dry etching using SF ₆ gas.

Next, the photoresist pattern 34 is removed (FIG. 6(g)), and then the hard mask pattern 32P is removed, and the polarizer 10 having the plurality of thin lines 2 and the light shielding film 4 on the transparent substrate 1 is obtained (FIG. 6(h) ).

Although not shown in the examples shown in FIGS. 5 and 6, in the present invention, a plurality of thin wires 2 and a light shielding film 4 may be formed on the large-area transparent substrate 1, and then the polarizing region 3 in which the thin wires 2 are disposed may be cut. On the outside, a polarizer 10 that has been cut to a desired size and shape is obtained.

Further, in the above, the polarizing material layer 31 is etched in accordance with the state of the residual photoresist pattern 34. However, the present invention may also remove the photoresist pattern after the step of forming the hard mask pattern 32P as shown in FIG. 6(e). 34, only the hard mask pattern 32P is used as an etching mask, and the polarizing material layer 31 is etched to form the polarizing material pattern 31P.

Further, in the above description, the polarizer 10 obtained is described with respect to the form in which the hard mask pattern 32P is removed. However, the present invention may also completely or partially retain the hard mask pattern 32P as needed.

For example, in the form shown in Fig. 6(g), the form of the total residual hard mask pattern 32P may be a form in which the polarizer is finally obtained. In this case, the step of removing the hard mask pattern 32P can be omitted, and the effect of the step can be shortened.

Further, although the above description is directed to the case where the hard mask material layer 32 is provided on the polarizing material layer 31, the present invention may form the photoresist layer on the polarizing material layer 31 without providing the hard mask material layer 32. 33. The photoresist pattern 34 is used as an etching mask and the polarizing material layer 31 is etched to form a polarizing material pattern 31P having the thin lines 2 and the light shielding film 4.

In this case, the polarizing material layer 31 corresponds to the first material layer.

Here, the method of forming the photoresist pattern 34 shown in FIG. 5(c) above may be used under the premise that the photoresist pattern 34 having the desired thin line pattern 34a and the light shielding film pattern 34b can be formed. Particularly preferred is a method of irradiating an electron beam.

The reason is that the photoresist pattern is formed by a method of irradiating an electron beam, and the actual performance is achieved in the manufacture of a mask for semiconductors. For example, a fine line pattern having a pitch of 60 nm or more and 140 nm or less can be formed with high precision in a desired region. Moreover, the reason is the relative positional accuracy of the thin line pattern 34a and the light shielding film pattern 34b, and the nano level accuracy required for the manufacture of the semiconductor mask can be achieved.

Furthermore, in the present invention, it is preferable that the photoresist layer 33 is formed of a positive electron beam photoresist, and the step of forming the photoresist pattern 34 having the thin line pattern 34a and the light shielding film pattern 34b is performed, which is necessary for the desired thin line and The step of irradiating the electron beam by the photoresist layer 33 other than the position where the light shielding film is formed is required.

More specifically, the thin line pattern 34a is preferably a step of constituting a line and a space pattern, and irradiating an electron beam to the photoresist layer 33 which is a position of the space pattern portion in the line and the space pattern.

The reason is that if the electron beam is irradiated to the above position, the area of the irradiated electron beam can be reduced, and the time of the electron beam irradiation step can be shortened.

The above will be described in more detail.

For example, the width of the thin line 2 of the polarizer 10 shown in FIG. 1 is half the pitch of the thin line 2, and if a negative electron beam resist is used, when the thin line pattern and the light shielding film pattern of the polarizer 10 are to be obtained, electron beam irradiation is performed. The area is the total area of all the thin wires 2 plus the area of the light shielding film 4.

On the other hand, when the above method is used, the area of the electron beam irradiation becomes the total area of all the spaced portions of the thin wires 2, that is, the total area of all the thin wires 2 can be reduced, and the time for irradiating the area of the light shielding film 4 can be reduced.

C. Light alignment device

Next, the optical alignment device of the present invention will be described.

The optical alignment device of the present invention is a light alignment device that polarizes ultraviolet light and irradiates the light alignment film, and includes the above-described polarizer of the present invention, and irradiates light that has passed through the polarization region of the polarizer to the light alignment film.

In the optical alignment device of the present invention, by providing the polarizer of the present invention, it is possible to suppress the penetration of the unnecessary S-wave component of the ultraviolet light irradiated from the ultraviolet lamp. Therefore, it is possible to effectively perform the alignment restriction force on the photo-alignment film, and the productivity can be improved.

Fig. 7 is a view showing an example of the configuration of the optical alignment device of the present invention.

The optical alignment device 50 shown in FIG. 7 includes a polarizer unit 51 and an ultraviolet lamp 52 housed in the polarizer of the present invention, and the polarizer 10 accommodated by the polarizer unit 51 from the ultraviolet light irradiated from the ultraviolet lamp 52. Polarization is performed, and the polarized light (polarized light 54) is irradiated onto the photo-alignment film 55 formed on the workpiece 56, thereby imparting a match to the photo-alignment film 55. To limit the force.

Further, the optical alignment device 50 is provided with a mechanism for moving the workpiece 56 on which the optical alignment film 55 has been formed, and by moving the workpiece 56, the polarized light 54 can be completely applied to the optical alignment film 55. For example, in the example shown in Fig. 6, the workpiece 56 is moved in the right direction (the direction of the arrow in Fig. 6) in the drawing.

In the example shown in FIG. 7, the workpiece 56 is exemplified as a rectangular flat plate. However, the form of the workpiece 56 of the present invention is lifted before the polarized light 54 can be irradiated, and the rest is not particularly limited. For example, the workpiece 56 may be a film. The shape may also be a banded (mesh) shape that can be taken up.

In the present invention, the ultraviolet lamp 52 preferably emits ultraviolet light having a wavelength of 240 nm or more and 380 nm or less, and the optical alignment film 55 preferably has sensitivity to ultraviolet light having a wavelength of 240 nm or more and 380 nm or less.

Since the optical alignment device 50 is provided with the polarizer 10 having the light-shielding film 4 having high light-shielding properties in the above-described wavelength range of ultraviolet light, it is possible to efficiently suppress the penetration of the S-wave component. Therefore, it is possible to efficiently perform the alignment restriction force on the photo-alignment film having sensitivity to the above-mentioned wavelength range of ultraviolet light, so that productivity can be improved.

Further, in order to efficiently illuminate the light from the ultraviolet lamp 52 to the polarizer, the optical alignment device 50 is preferably disposed on the back side of the ultraviolet lamp 52 (opposite side of the polarizer unit 51) or the side surface side. There is a mirror 53 that reflects ultraviolet light.

Further, in order to efficiently impart an alignment restriction force to the large-area light alignment film 55, as shown in FIG. 7, the ultraviolet lamp 52 is preferably a rod-shaped lamp, and the polarized light 54 is irradiated. The optical alignment device 50 of the irradiation region is long in the orthogonal direction of the moving direction of the workpiece 56 (the direction of the arrow in FIG. 7).

In this case, the polarizer unit 51 is also applied to the form of irradiating the large-area optical alignment film 55 with the polarized light 54. However, since the large-area polarizer is difficult to manufacture, a plurality of polarizers are disposed in the polarizer unit 51. Both technical and economic aspects are preferred.

Furthermore, the optical alignment device of the present invention may be configured to include a plurality of ultraviolet lamps.

Fig. 8 is a view showing another configuration example of the optical alignment device of the present invention.

As shown in Fig. 8, the optical alignment device 60 is provided with two ultraviolet lamps 62, and a polarizer unit 61 housed in the polarizer of the present invention is provided between each of the ultraviolet lamps 62 and the workpiece 66. Further, each of the ultraviolet lamps 62 is provided with a mirror 63.

Accordingly, by providing a plurality of ultraviolet lamps 62, the amount of irradiation of the polarized light 64 irradiated to the photo-alignment film 65 formed on the workpiece 66 can be increased as compared with the case where only one ultraviolet lamp 62 is provided. Therefore, the moving speed of the workpiece 66 can be increased as compared with the case where only one ultraviolet lamp 62 is provided, and as a result, productivity can be improved.

In addition, in the example shown in FIG. 8, the configuration in which two ultraviolet lamps 62 are arranged side by side in the moving direction of the workpiece 66 (the direction of the arrow in FIG. 8) is exemplified, but the present invention is not limited thereto, and for example, it may be configured to move on the workpiece 66. A plurality of ultraviolet lamps are disposed in the orthogonal direction of the direction, and a plurality of ultraviolet lamps may be disposed in both directions of the moving direction of the workpiece 66 and the orthogonal direction thereof.

In addition, in the example shown in FIG. 8, the configuration in which one polarizer unit 61 is disposed for one ultraviolet lamp 62 is exemplified, but the present invention is not limited thereto, and for example, only one of the plurality of ultraviolet lamps may be provided. The composition of the polarizer units. In this case, one polarizer unit may have a size that can cover a plurality of ultraviolet light irradiation regions.

Fig. 9 is a view showing an example of a configuration of a polarizer of the optical alignment device of the present invention. Further, in the arrangement of the polarizers shown in FIGS. 9(a) to 9(d), the flat polarizers 10 are arranged in a planar manner with respect to the film surface of the photoalignment film.

For example, in the optical alignment device 50 shown in Fig. 7, when the strip-shaped polarized light 54 is irradiated in the orthogonal direction of the moving direction of the workpiece 56, the direction of the movement of the workpiece 56 is shown in the polarizer unit 51 as shown in Fig. 9(a). It is efficient to arrange a plurality of polarizers 10 in the orthogonal direction (arrow direction). The reason is that the number of the polarizers 10 can be suppressed to be small.

On the other hand, when the area of the polarizer 10 is small or the optical alignment device is provided with a plurality of ultraviolet lamps, as shown in FIG. 9(b), it is preferable to remove the workpiece moving direction (arrow direction). In the direction of intersection, a plurality of polarizers 10 are also arranged in the direction of the moving direction (arrow direction). The reason is that the light from the ultraviolet lamp can be irradiated to the light alignment film without waste, and the productivity can be improved.

Here, in the present invention, as shown in FIG. 9(c) and FIG. 9(d), a plurality of polarizers arranged in a plurality of positions are preferably arranged in a row in a direction other than the direction in which the workpiece is moved (the direction of the arrow). The position of the polarizer is displaced in the orthogonal direction (up and down direction in the drawing) in the moving direction of the workpiece.

More specifically, in the orthogonal direction of the direction of movement of the photo-alignment film, adjacent plurals are sandwiched Preferably, the light shielding film at the boundary portion between the polarizers is provided with a plurality of polarizers in such a manner that the moving direction of the optical alignment film is not linearly connected.

The reason is that in the region where the light-shielding film 4 is formed, since the polarized light is not generated, the disadvantage of the light-shielding film 4 to the light-aligning film can be suppressed.

Here, the plurality of polarizers arranged in the arrangement shown in FIG. 9( c ) have the same shape and the same size, and the positions of the polarizers adjacent to each other in the left-right direction are in the vertical direction of the polarizer. The 1/2 size is arranged in a stepped shape in the vertical direction.

Further, in the arrangement shown in FIG. 9(d), the plurality of polarizers are arranged to have the same shape and the same size, and the position of the polarizer adjacent to the vertical direction in the left-right direction is smaller than the vertical direction of the polarizer. The 1/2 is arranged in a stepped manner in the vertical direction.

The above will be described in more detail.

In the arrangement shown in Fig. 9(c), the boundary portion 71 of the polarizer 10 (10p) and the polarizer 10 (10q) which are adjacently arranged in the vertical direction is a polarizer 10 disposed in the left-right direction ( 10r) and the polarizer 10 (10s) are prevented from extending in the left-right direction.

In other words, in the arrangement shown in FIG. 9(c), the light shielding film which is disposed adjacent to the boundary portion between the polarizers in the vertical direction is prevented from being linearly connected in the left-right direction.

Therefore, in the arrangement shown in Fig. 9(c), when the polarized light is applied to the photo-alignment film, the occurrence of defects due to the light-shielding film can be suppressed from affecting the photo-alignment film.

Similarly, the arrangement shown in FIG. 9(d) is a light-shielding film in which the boundary portion between the polarizers is disposed adjacent to each other in the vertical direction, and is prevented from being linearly connected in the left-right direction.

Therefore, when the polarized light is irradiated to the light alignment film by using the configuration shown in FIG. 9(d), It is possible to suppress the occurrence of defects due to the above-mentioned light shielding film from affecting the light alignment film.

In addition, in the arrangement shown in FIG. 9(c), since the step is shifted in the vertical direction by 1/2 of the size of the polarizer in the vertical direction, the position in the vertical direction of the boundary portion 71 with respect to the horizontal direction (work moving direction) One polarizer 2 is aligned with each other.

On the other hand, in the arrangement shown in FIG. 9(d), since the step smaller than the half of the size of the polarizer in the vertical direction is displaced in the vertical direction, the position in the vertical direction of the boundary portion 72 becomes more difficult to align.

Therefore, the arrangement shown in Fig. 9(d) can further suppress the occurrence of defects due to the above-mentioned light shielding film from affecting the optical alignment film.

Further, in the examples shown in Figs. 9(a) to 9(d), each of the polarizers is disposed adjacent to each other in the side, but the present invention is not limited to this embodiment, and may have a gap at a boundary portion between adjacent polarizers. form.

Further, the end portions of the adjacent polarizers may be overlapped with each other, so that the boundary portion between the polarizers does not have a gap.

Fig. 10 is a view showing another example of a configuration of a polarizer of the optical alignment device of the present invention.

In the present invention, instead of the arrangement shown in Fig. 9(a), for example, the polarizer 10c shown in Fig. 3(c) and the polarizer 10f shown in Fig. 3(c) may be used instead, as shown in Fig. 10(a). It is to be noted that each of the polarizers is disposed such that one of the light shielding films is not overlapped with each other.

If it is in this configuration, there is no between the polarizers in the up and down direction in the figure. Since the light-shielding film does not have a gap between the polarizers, the three polarizers of the polarizers 10f, 10c, and 10f are arranged in this order from the upper direction to the lower side in the figure, and can be provided in the vertical direction as shown in the figure. The role of a long piece of polarizer.

Therefore, each of the polarizers can be disposed in the optical alignment device in a manner of sandwiching a part of the respective light shielding films. Therefore, it is possible to fix the polarizers to the optical alignment device without clamping the region (polarized region) formed by the thin wires, so that the defective portion of the thin wires caused by the interlocking portion is not caused, and Part of the broken thin line produces a bad condition of foreign matter.

In addition, in FIG. 10(a), three polarizers 10f, 10c, and 10f are sequentially arranged in order to avoid complication. However, in the above aspect, two or more polarizers 10c may be used. Longer configuration in the up and down direction.

Further, similarly, the polarizer 10a shown in FIG. 3(a) and the polarizer 10e shown in FIG. 3(e) may be used. As shown in FIG. 10(b), one side of the light shielding film is not formed in each polarizer. The outer edge portions of each other are arranged in an overlapping state. In this case, it is also possible to play the role of having one polarizer.

Furthermore, in this case, each of the polarizers may be disposed in the optical alignment device in accordance with a method of sandwiching a part of the respective light shielding films. Therefore, it is possible to fix the polarizers to the optical alignment device without clamping the region (polarized region) formed by the thin wires, so that the defective portion of the thin wires caused by the interlocking portion is not caused, and Part of the broken thin line produces a bad condition of foreign matter.

In addition, FIG. 10(b) is also possible to use two or more polarizers in the up and down direction in the drawing. 10a is formed in a longer configuration in the up and down direction in the drawing.

D. Polarizer

Next, the polarizer of the present invention will be described.

The polarizer of the present invention shields the polarized light in which the incident ultraviolet light is parallel to the thin line, and the polarizer that penetrates the light in the direction perpendicular to the thin line, and is arranged side by side on the substrate having the transparency to the ultraviolet light. a plurality of the thin lines, and a light shielding film for shielding the ultraviolet light from the outside of the thin line region in the region where the thin line is disposed, wherein the edge forming direction of the inner edge side of the light shielding film is parallel or perpendicular to the longitudinal direction of the thin line .

Such a polarizer of the present invention can be, for example, as shown in Fig. 1 described above.

In addition, the polarizing area 3 shown in FIG. 1 is the same as the thin line area of the area in which the thin line 2 is arranged.

Further, as shown in Fig. 1, the light shielding film 4 is formed outside the thin line region of the region where the thin wire 2 is disposed, and the edge on the inner edge side of the light shielding film 4 is parallel or perpendicular to the longitudinal direction of the thin wire.

According to the invention, the light shielding film is formed on the outer side of the thin line region, and when the polarizer is disposed in the light alignment device, the region formed by the light shielding film can be sandwiched. In other words, the polarizer can be fixed to the optical alignment device without sandwiching the thin line region in the region where the thin wires are arranged in the polarizer, so that the problem of the breakage of the fine wire caused by the interlocking portion can be released, and A bad condition occurs in the broken thin line portion.

Further, as described above, since the light shielding film is formed on the outer circumference of the thin line region in the region where the thin line is disposed, it is possible to suppress penetration of incident light from the outer region of the thin line region in the polarizer. Regardless of the S-wave component of the incident light, 俾 can suppress the problem that the extinction ratio is greatly reduced.

Further, the reason is that the distance between the thin line region and the light shielding film can be easily reduced by the edge of the inner edge side of the light shielding film being parallel or perpendicular to the longitudinal direction of the thin line, and a high extinction ratio can be obtained.

The polarizer of the present invention has a substrate, a thin line region, and a light shielding film.

Substrate

The substrate of the present invention is penetrating to the above ultraviolet light.

In the present invention, the term "permeability to ultraviolet light" means that light having a wavelength of 240 nm or more and 380 nm or less can be penetrated.

The material and thickness of the substrate can be set to be the same as those described in the section "1. Transparent substrate" of the above "A. Polarizer".

2. Thin line area

The thin line region of the present invention is a region in which fine lines are arranged.

The above thin line area is more systematically refers to an area in which a plurality of thin lines are arranged side by side.

Further, the thin line region shields the light in the polarization direction parallel to the thin line, and penetrates the light in the polarization direction perpendicular to the thin line, thereby generating a main region of the linearly polarized light.

The thin wire of the present invention is in a state in which a plurality of thin wires are arranged side by side on the substrate.

The material, the thickness, the number and length, the pitch, the work ratio, and the width of the thin wire may be the same as those described in the "2. Thin line" item of the above "A. Polarizer".

When the light shielding film is formed on the outer side in the longitudinal direction of the thin line of the thin line region, it is preferable to form the end portion of the thin line in the longitudinal direction and to be connected to the light shielding film.

When the light shielding film is formed on the outer side in the thin line arrangement direction of the thin line region, it is preferable that the interval between the end thin line and the light shielding film in the thin line arrangement direction is the same as the interval between the thin lines.

More specifically, in FIGS. 1(a) and 1(b), the distance P ₂ between the left edge of the right end thin line 2 and the edge of the inner edge side of the light shielding film 4 is preferably between the thin lines 2 and the thin lines 2 The interval P1 is the same size. Similarly, in Figs. 1(a) and 1(b), the distance between the right edge of the left end thin line 2 and the edge of the inner edge side of the light shielding film 4 is preferably the interval P ₁ between the thin lines 2 and each other. For the same size.

In addition, the effect of the connection between the end of the longitudinal direction of the thin line and the light-shielding film, and the interval between the thin line of the end thin line and the light-shielding film are the same as those of the above-mentioned "A. Polarized light". The contents described in the "3. Polarized area" item are the same, and thus the description thereof will be omitted.

3. Sunscreen

The light-shielding film of the present invention shields the above-mentioned ultraviolet light.

The light shielding film is formed outside the thin line region of the region where the thin wires are arranged.

Further, the light shielding film is formed such that the edge forming direction on the inner edge side of the light shielding film is parallel or perpendicular to the longitudinal direction of the thin line.

The planar form of the light-shielding film may be formed outside the thin line region of the region where the thin wires are arranged.

Specifically, the planar form can be the same as that described in the section "4. Light-shielding film" of the above "A. Polarizer".

In the present invention, as shown in FIG. 3(h), the outer edge of the light shielding film may be disposed on the inner side of the outer edge of the polarizer, and the region from the outer edge of the light shielding film to the outer edge of the polarizer may also have a thin line. In other words, a configuration is adopted in which the second thin line region in which the thin line is disposed is formed outside the light shielding film. When the thin line region, the light shielding film, and the second thin line region are sequentially formed, when the plurality of polarizers are arranged in a planar arrangement on the optical alignment device, the light shielding regions of the adjacent polarizers can be prevented from coming into contact with each other to cause a light shielding region. Expand the situation.

Further, the longitudinal direction of the thin line included in the second thin line region is generally in the same direction as the longitudinal direction of the thin line included in the thin line region.

Further, when a plurality of polarizers are disposed in the optical alignment device, various types of polarizers having different planar shapes of the light shielding film may be used in combination.

The edge forming direction on the inner edge side of the light shielding film may be parallel or perpendicular to the longitudinal direction of the thin line.

Here, the "edge forming direction on the inner edge side of the light shielding film is parallel or perpendicular to the longitudinal direction of the thin line", and the edge forming direction on the inner edge side is parallel or perpendicular to the longitudinal direction of the thin line. Alternatively, when the light shielding film has a plurality of inner edge side edges, it may include both a parallel direction and a vertical direction with respect to the longitudinal direction of the thin wires.

1 and 3 (e), (f), (g), and (h), the edge forming direction on the inner edge side of the light shielding film is included, and includes a direction parallel to the longitudinal direction of the thin line and a vertical direction. The situation of both.

3(a) and 3(c) show the edge forming direction of the light-shielding film, which is only in a direction parallel to the longitudinal direction of the thin line.

3(b) and 3(d) show the edge forming direction of the light-shielding film, which is only perpendicular to the longitudinal direction of the thin line.

When the second thin line region is formed outside the light shielding film, the edge forming direction on the outer edge side of the light shielding film is preferably parallel or perpendicular to the longitudinal direction of the thin line included in the second thin line region. The reason is to obtain a higher extinction ratio.

A letter, a mark, or an alignment mark may be formed in the light shielding film. For example, by forming characters, symbols, and the like in the light-shielding film, information on a related polarizer such as a model can be given. Moreover, it is also possible to use the judgment of the orientation of the up, down, left and right, the front and back, and the rough alignment.

Specifically, such a character, a symbol, or an alignment mark may be the same as that described in the item "4. Light-shielding film" of the above "A. Polarizer".

The light-shielding property and the constituent material of the light-shielding film to ultraviolet light can be the same as those described in the item "4. Light-shielding film" of the above "A. Polarizer".

4. Polarizer

The polarizer of the present invention has a substrate, a thin line region, and a light shielding film, but may have other configurations as needed.

E. Light alignment device

Next, the optical alignment device of the present invention will be described.

The optical alignment device of the present invention includes a plurality of polarizers, and the polarizer has a plurality of thin lines arranged in parallel and formed in a thin line region in which the thin lines are arranged. The light shielding film on the outer side, and the plurality of polarizers are disposed such that the polarizers are not included in the thin line region by the polarizers disposed adjacent to each other.

Such an optical alignment device of the present invention can be, for example, the one shown in FIGS. 7 and 8 described above.

Further, a plurality of the polarizers are disposed (that is, an arrangement in which the light shielding film is not included in each of the thin line regions of the polarizers disposed adjacently), and specifically, FIG. 10(a) and (b) can be used as described above. ) shown.

According to the invention, the polarizers disposed adjacent to each other are disposed so as not to include the light shielding film between the thin line regions, and the light shielding film is not provided between the polarizers. It has the function of one polarizer.

Furthermore, each of the polarizers can be disposed in the optical alignment device in accordance with a method of sandwiching a part of each of the light shielding films. Therefore, it is possible to fix the polarizers to the optical alignment device without holding the thin line region of the region where the thin wires are formed, so that the problem that the fine wires are broken from the interlocking portion of the clamped portion does not occur, and Part of the broken thin line produces a bad condition of foreign matter.

The invention is provided with at least a polarizer.

Hereinafter, each configuration of the polarizer of the present invention will be described in detail.

Polarizer

The polarizer of the present invention has a light shielding film which is formed by arranging a plurality of thin wires in parallel and formed on the outer side of the thin line region in the region where the thin wires are arranged.

The polarizer of the related art may be the same as the content described in the above-mentioned "D. Polarizer", and thus the description thereof will be omitted.

2. Configuration of polarizer

In the arrangement of the polarizer of the present invention, a plurality of the polarizers do not include the light shielding film between the thin line regions of the polarizers disposed adjacent to each other.

The arrangement of such a polarizer may be, for example, a polarizer disposed adjacently, and disposed adjacent to each other with respect to one of the light shielding films of the respective polarizers.

More specifically, the arrangement shown in FIGS. 10(a) and (b) described above can be used.

The arrangement of the polarizers may be arranged such that adjacent polarizers may be in contact with each other, or may have a gap at a boundary between adjacent polarizers.

The arrangement of the polarizers may be such that the ends of the polarizers overlap each other to form a shape in which no gap occurs at the boundary between the polarizers.

The configuration of the polarizer described above is configured such that the polarizers disposed adjacent to each other are disposed adjacent to each other in a state in which each of the polarizers is not formed with a light shielding film, and the ends of the adjacent polarizers are disposed to overlap each other (ie, each polarized light is disposed). In the case where one of the light shielding films is not formed, the outer edge portions of the light shielding film are arranged to overlap each other, for example, the same as those described in the item "C. Light alignment device".

The arrangement of the polarizer described above with respect to the moving direction of the workpiece can be the same as that described in the item "C. Optical alignment device".

In the present invention, a plurality of the polarizers disposed so as not to include the light shielding film between the thin line regions, respectively, are regarded as one polarizer (hereinafter also referred to as "combined polarizer" In the case of a plurality of the above-mentioned combined polarizers.

The arrangement of such a combined polarizer can be similar to the arrangement of a plurality of polarizers described in the above-mentioned "C. Optical alignment device".

3. Light alignment device

The optical alignment device of the present invention has a plurality of polarizers, but may have other configurations as needed.

Such another configuration may be, for example, a polarizer unit housed in a polarizer, an ultraviolet lamp, a mirror, a mechanism for moving a workpiece, and the like.

The other configuration described above can be the same as that described in the item "C. Optical alignment device" described above.

F. Installation method of polarizer

Next, a method of mounting the polarizer of the present invention will be described.

The method of mounting a polarizer according to the present invention is a method of attaching a plurality of polarizers to a light alignment device, wherein the polarizer has a plurality of thin wires arranged in parallel and formed on a light shielding film outside the thin line region of the region where the thin wires are arranged. And comprising: performing alignment of the polarizer by adjusting the alignment marks formed on the light shielding film, and adjusting an alignment step of a polarization direction of the plurality of the polarizers.

According to the present invention, high precision can be obtained by the alignment mark formed on the light shielding film The position and angle information of the thin lines can be easily adapted to the desired position and angle.

More specifically, the step of forming the thin line and the step of forming the light shielding film are performed in the same step, whereby the relative positional accuracy of the thin line and the light shielding film can be improved. Therefore, by forming the alignment marks on the light shielding film, the position and angle information of the thin lines can be accurately obtained from the alignment marks. In this case, by using the alignment mark formed on the light-shielding film, it is possible to accurately perform the alignment and the direction of the longitudinal direction of the thin line in the thin line region which determines the polarization direction of the polarizer.

The method of mounting the polarizer of the present invention includes at least a step of aligning.

Hereinafter, each step of the method of mounting the polarizer of the present invention will be described in detail.

1. Alignment step

The alignment step of the present invention is a step of performing alignment of the polarizer by using an alignment mark formed on the light-shielding film, and adjusting a polarization direction of the plurality of polarizers.

In addition, the polarizer used in this step and the alignment mark formed on the light-shielding film are the same as those described in the above-mentioned "A. Polarizer", and thus will not be described again.

In this step, the method of performing the alignment of the polarizer and adjusting the polarization direction of the plurality of polarizers is based on the method of using the alignment marks formed on the light-shielding film, and the rest is not particularly limited, and may be used. The general alignment method of quasi-marking, etc.

In the above method, for example, in the optical alignment device, at the place where the plurality of polarizers are disposed, the arrangement side alignment mark corresponding to the alignment mark is formed, and the alignment mark of the polarizer is overlapped with the arrangement side alignment mark Ways to configure the method, etc.

2. Polarizer installation method

The method of installing the polarizer of the present invention includes the above-described alignment step, but may include other steps as needed.

In the above, the polarizer, the method of manufacturing the polarizer, the optical alignment device, and the method of mounting the polarizer are described with respect to the respective embodiments, but the present invention is not limited to the above embodiment. The above-described embodiments are merely illustrative, and the technical solutions of the present invention are substantially the same as those of the technical scope of the present invention, and the same effects are all included in the technical scope of the present invention.

[Examples]

The following exemplified embodiments are described in more detail with reference to the present invention.

[Example 1]

First, the following test substrate was produced, and the refractive index (n) and the attenuation coefficient (k) at each wavelength were measured, and the optical density at a predetermined film thickness was calculated.

(shading film formation)

The transparent substrate is prepared with a synthetic quartz glass having a thickness of 6.35 mm, and a molybdenum-niobium mixed target (Mo:Si = 1:2 mol%) is used, and a molybdenum telluride film having a film thickness of 60 nm is formed by reactive sputtering in an argon atmosphere. The test substrate is prepared.

In addition, the film thickness was measured by the AFM apparatus DIMENSION-X3D by VEECO Corporation.

(Measurement of refractive index and attenuation coefficient)

For the test substrate, the refractive index (n) and the attenuation coefficient (k) of the ultraviolet light having a wavelength of 190 nm to 380 nm were measured by a transmissive ellipsometer (VUV-VASE manufactured by Woollam Co., Ltd.). The results are shown in Table 1.

(optical density)

From the refractive index (n) and the attenuation coefficient (k) shown in Table 1, the optical density (OD) at which the film thickness of the molybdenum molybdenum film was 60 nm and 100 nm was calculated. The results are shown in Table 2.

(Evaluation of Example 1)

As shown in Table 2, the light-shielding film of the polarizer of the present invention has a light-shielding property of an optical density of 2.8 or more for ultraviolet light having a wavelength of 190 nm or more and 380 nm or less as long as it has a film of molybdenum telluride having a film thickness of 60 nm or more.

In addition, when the light-shielding film is composed of a molybdenum molybdenum film having a film thickness of 100 nm or more, it is confirmed that the ultraviolet light having a wavelength of 190 nm or more and 380 nm or less has an optical density of 4.4 or more.

[Embodiment 2]

Next, the following polarizer was fabricated, and the P wave transmittance and the S wave transmittance at each wavelength were measured, and the extinction ratio was calculated.

(Manufacture of polarizer)

The transparent substrate is prepared with synthetic quartz glass having a plane size of 152 mm × 152 mm and a thickness of 6.35 mm, and a mixed target of molybdenum and yttrium (Mo: Si = 1:2 mol%) is used in an argon atmosphere. A molybdenum telluride film having a film thickness of 100 nm was formed by a reactive sputtering method.

Next, a chromium film having a thickness of 5 nm was formed on the molybdenum molybdenum film by a reactive sputtering method using a chromium target in an argon atmosphere.

Next, a positive electron beam resist (ZEP520, manufactured by Zeon Corporation, Japan) was applied onto the chromium film, and electron beam drawing was performed to form a photoresist pattern having a fine line pattern and a light shielding film pattern.

Here, the thin line pattern is a line and a space pattern having a pitch of 100 nm, and the plane size of the entire line and the space pattern is 90 mm × 100 mm. In other words, the plane size of the polarizing region of the polarizer is 90 mm × 100 mm. Further, the length in the longitudinal direction of the thin wire is 90 mm, and the thin wire is connected to the light shielding film.

Further, the inner edge of the light shielding film pattern is aligned with the outer edge of the polarizing region, and the outer edge is 152 mm × 152 mm.

In addition, the inner edge of the light shielding film pattern forms a direction with respect to the line and the space pattern constituting the thin line pattern, and has both a parallel edge and a vertical edge, and the interval pattern of the line and the space pattern is formed with respect to the line and The direction of the spacer pattern is uniform to the inner edge (edge) of the parallel light-shielding film.

Next, an etching mask is used for the photoresist pattern. First, a chromium film is patterned by dry etching using a mixed gas of chlorine and oxygen to form a chromium film pattern, and then the molybdenum molybdenum exposed from the chromium film pattern is further formed. The film was processed by dry etching using SF6 gas, and then the photoresist pattern and the chromium film pattern were removed, and a polarizer of Example 2 in which the light shielding film was formed on the outer periphery of the polarizing region where the thin wires were arranged was obtained.

The thin line width, thickness, and pitch of the polarizer of Example 2 were used by Vistec The SEM measuring apparatus LWM9000 manufactured by the company and the AFM apparatus DIMENSION-X3D manufactured by VEECO Co., Ltd. were measured, and the results were 36 nm, 100 nm, and 100 nm, respectively.

(Structural evaluation of thin lines)

The structure of the polarizer and the light-shielding film of the polarizer of Example 2 was evaluated by a transmission type ellipsometer (VUV-VASE manufactured by Woollam Co., Ltd.).

As a result, it was confirmed that the fine line system has a molybdenum molybdenum film having a width and a thickness of 31.8 nm and a thickness of 95.8 nm, and the upper surface film thickness and the side surface film thickness of the molybdenum molybdenum film are 4.2 nm and 4.2 nm, respectively. Oxide film.

In addition, it was confirmed that the light-shielding film has a molybdenum telluride film having a thickness of 95.8 nm and an oxide film made of ruthenium oxide having a thickness of 4.2 nm on the molybdenum telluride film.

(Measurement of P wave penetration rate and S wave penetration rate)

For the polarizer of Example 2, the P-wave transmittance of ultraviolet light in the range of 200 nm to 400 nm was measured by a transmissive ellipsometer (VUV-VASE manufactured by Woollam Co., Ltd.) (P-wave component/incident light in the emitted light) The P wave component in the middle) and the S wave transmittance (the S wave component in the emitted light/the S wave component in the incident light), and the extinction ratio (P wave transmittance/S wave transmittance) is calculated. The results are shown in Table 3 and Figure 11.

As shown in Table 3 and FIG. 11, the P-wave transmittance of the polarizer of Example 2 was 64.3% or more and the extinction ratio was 55.1 or more in the wavelength range of 240 nm to 400 nm.

Further, in the wavelength range of 240 nm to 260 nm, the P wave transmittance of the polarizer of Example 2 was 64.3% or more, and the extinction ratio was 55.1 or more. Further, in the wavelength range of 355 nm to 375 nm, the P wave transmittance of the polarizer of Example 2 was 77.1% or more, and the extinction ratio was 277.9 or more.

(Evaluation of Example 2)

As shown in Table 3 and FIG. 11, the polarizer of Example 2 has a high P wave transmittance and is excellent in extinction ratio.

In addition, as a result of the above-mentioned Example 1, it was confirmed that when the molybdenum telluride film having a film thickness of 60 nm or more is used, the ultraviolet light having a wavelength of 190 nm or more and 380 nm or less has an optical density of 2.8 or more, because The light-shielding film of the polarizer of Example 2 has a molybdenum telluride film having a thickness of at least 95.8 nm, and thus it is also possible to evaluate that the light-shielding property is sufficiently high.

1‧‧‧Transparent substrate

2‧‧‧ Thin line

3‧‧‧Polarized area

4‧‧‧Shade film

10‧‧‧Polarizer

Claims (10)

A polarizer is a polarizer in which a plurality of thin wires are arranged side by side on a transparent substrate transparent to ultraviolet light, and is characterized in that a light shielding for shielding the ultraviolet light is formed outside the polarizing region where the thin wires are arranged. a film; the thin wire is connected to the light shielding film in a longitudinal direction thereof. The polarizer of claim 1, wherein the light shielding film is formed along one side of the outer edge of the polarizing region. The polarizer of claim 1 or 2, wherein the light shielding film is formed on an outer circumference of the polarizing region. The polarizer of claim 1 or 2, wherein a character, a mark, or an alignment mark is formed in the light-shielding film, and the character, the mark, or the alignment mark has a configuration in which a plurality of thin lines are arranged in parallel. The polarizer of claim 4, wherein the S-wave transmittance of the ultraviolet light by the character, the mark, or the alignment mark is an S-wave transmittance of the ultraviolet light in the polarized region. The same value, or smaller than the S-wave transmittance value of the above-mentioned ultraviolet light in the above-mentioned polarizing region. The polarizer of claim 1 or 2, wherein the material constituting the light shielding film contains a material constituting the thin wire. The polarizer of claim 1 or 2, wherein the material constituting the light shielding film is made of a material containing molybdenum telluride. A method for producing a polarizer is a method for manufacturing a polarizer comprising a plurality of thin wires and a light shielding film for shielding the ultraviolet light on a transparent substrate having transparency to ultraviolet light, comprising: a step of forming a laminate of the first material layer on the transparent substrate; a step of forming a photoresist layer on the first material layer; and processing the photoresist layer to form a thin line pattern and a light shielding film pattern a step of forming a photoresist pattern; and using the photoresist pattern as an etching mask and performing an etching process on the first material layer; wherein the photoresist layer is formed of a positive type electron beam photoresist, wherein the photoresist layer is formed The step of having the photoresist pattern of the thin line pattern and the light-shielding film pattern includes a step of irradiating an electron beam to a photoresist layer formed at a pattern portion of the line and the spacer pattern constituting the thin line pattern. A polarizer is a polarizer that shields incident ultraviolet light parallel to a direction of polarization of a thin line and transmits light perpendicular to a direction of polarization of the thin line, and is characterized in that it penetrates the ultraviolet light. a plurality of the thin wires are arranged in parallel on the substrate; a light shielding film that shields the ultraviolet light from the outer side of the thin line region in the region where the thin wires are arranged; and an edge of the inner edge side of the light shielding film is formed in a direction of the thin line The longitudinal direction is parallel or perpendicular; the thin line is connected to the light shielding film in the longitudinal direction thereof. The polarizer of claim 9, wherein a second thin line region of the region where the thin line is disposed is formed outside the light shielding film.