JP6428171B2 - Polarizer, polarizer substrate and optical alignment apparatus - Google Patents

Description

  The present invention relates to a polarizer that can easily impart alignment regulating force to a photo-alignment film.

A liquid crystal display device generally has a structure in which a counter substrate on which driving elements are formed and a color filter are arranged to face each other and the periphery is sealed, and a gap is filled with a liquid crystal material. The liquid crystal material has refractive index anisotropy, and the pixel is switched on and off from the difference between the state where the liquid crystal material is aligned along the direction of the voltage applied to the liquid crystal material and the state where no voltage is applied. Can be displayed. Here, the substrate sandwiching the liquid crystal material is provided with an alignment film for aligning the liquid crystal material.
In addition, alignment films are also used as materials for retardation films used in liquid crystal display devices and retardation films for 3D display.
For example, a film using a polymer material typified by polyimide is known as the alignment film, and the alignment film has an alignment regulating force by rubbing the polymer material with a cloth or the like. .
However, the alignment film to which the alignment regulating force is applied by such rubbing treatment has a problem that the cloth or the like remains as a foreign substance.

On the other hand, the alignment film that expresses the alignment regulating force by irradiating linearly polarized light, that is, the photo-alignment film, can apply the alignment regulating force without performing the rubbing treatment with the cloth as described above. In recent years, it has been attracting attention because it has no remaining defects.
As an irradiation method of linearly polarized light for imparting alignment regulating force to such a photo-alignment film, a method of exposing through a polarizer is generally used. As the polarizer, one having a plurality of fine wires arranged in parallel is used, and as a material constituting the fine wires, aluminum or titanium oxide is used (Patent Document 1, etc.).

Patent No. 4968165

  However, in the case of a polarizer having a thin wire made of the material as described above, the extinction ratio (P-wave transmittance / S-wave transmittance) in the case of short-wavelength light such as the ultraviolet region, that is, with respect to the thin wire The transmission of the thin line with respect to the transmittance of the parallel polarization component (S wave) (S wave component in the outgoing light / S wave component in the incident light, hereinafter sometimes referred to simply as S wave transmittance). The ratio of the transmittance of the polarization component (P wave) perpendicular to the thin line (P wave component in the outgoing light / P wave component in the incident light, hereinafter sometimes referred to simply as P wave transmittance) is low. There has been a problem that it is impossible to efficiently apply the alignment regulating force to the photo-alignment film.

  The present invention has been made in view of the above circumstances, and a main object thereof is to provide a polarizer that can easily impart alignment regulating force to a photo-alignment film.

  As a result of repeated studies to solve the above problems, the present inventors have found that the refractive index and extinction coefficient of the material constituting the thin line contribute to the extinction ratio, and further the refractive index and extinction coefficient are predetermined. As a result of using a material in this range, the inventors have found that even in the case of light with a short wavelength, the extinction ratio can be improved, and the present invention has been completed.

  That is, the present invention has a thin line in which a plurality of lines are arranged in parallel in a straight line, the thin line has a polarizing material layer containing a polarizing material, and the extinction ratio of light having a wavelength of 250 nm is 40 or more. A polarizer is provided.

  According to the present invention, since the extinction ratio of light having a short wavelength is excellent, for example, it is possible to easily impart alignment regulating force to the photo-alignment film.

In the present invention, it is preferable that the polarizer is for imparting alignment regulating force to the photo-alignment film, and for generating linearly polarized light having a wavelength in the ultraviolet region.
This is because the effect of excellent extinction ratio of short wavelength light of the present invention can be more effectively exhibited.

  In this invention, it is preferable that the refractive index of the said polarizing material exists in the range of 2.0-3.2, and the said extinction coefficient is in the range of 2.7-3.5. This is because it is easy to obtain the above extinction ratio. In addition, since the refractive index and extinction coefficient are within the above ranges, both the extinction ratio and the P-wave transmittance can be excellent over a wide wavelength range.

  In this invention, it is preferable that the refractive index of the said polarizing material exists in the range of 2.3-2.8, and the extinction coefficient of the said polarizing material exists in the range of 1.4-2.4. When the refractive index and extinction coefficient are within the above ranges, the amount of rotation of the polarization axis of the polarized light exiting the polarizer can be made smaller than the light incident on the polarizer at various angles. In addition, the extinction ratio can be further improved.

  In the present invention, the polarizing material is preferably a molybdenum silicide material. This is because it is easy to obtain the above extinction ratio.

  In this invention, it is preferable that the film thickness of the said polarizing material layer is 40 nm or more, and the pitch between the said polarizing material layers is 150 nm or less. This is because it is easy to obtain the above extinction ratio.

  The present invention has a transparent substrate and a polarizing material film formed on the transparent substrate and containing a polarizing material, and the polarizing material film has a refractive index in the range of 2.0 to 3.2. And a polarizer substrate having an extinction coefficient in the range of 2.7 to 3.5.

  Moreover, this invention has a transparent substrate and the polarizing material film | membrane which is formed on the said transparent substrate and contains a polarizing material, The refractive index of the said polarizing material film | membrane is 2.3-2.8. The polarizer substrate is characterized in that the extinction coefficient is in the range of 1.4 to 2.4.

  According to the present invention, a polarizer having an excellent extinction ratio can be easily formed by having the polarizing material film.

  In the present invention, the polarizing material is preferably a molybdenum silicide material. It is because it can be made more suitable for formation of the polarizer excellent in extinction ratio by using the said material.

  The present invention is a photo-alignment apparatus that polarizes ultraviolet light and irradiates the photo-alignment film with the above-described polarizer, and irradiates the photo-alignment film with light polarized by the polarizer. A photo-alignment device is provided.

  According to the present invention, by using the polarizer, it is possible to easily impart alignment regulating force to the photo-alignment film.

  In the present invention, a mechanism for moving the photo-alignment film is provided, and a plurality of the polarizers are provided in both the moving direction of the photo-alignment film and the direction orthogonal to the moving direction of the photo-alignment film. The boundary between the plurality of polarizers adjacent in the direction orthogonal to the moving direction of the photo-alignment film is not continuously connected to the moving direction of the photo-alignment film. Is preferably arranged. This is because the adverse effect of the boundary portion on the photo-alignment film can be suppressed.

  In this invention, there exists an effect that the polarizer which can provide the alignment control force to a photo-alignment film | membrane easily can be provided.

It is a schematic plan view which shows an example of the polarizer of this invention. It is the sectional view on the AA line of FIG. It is process drawing which shows an example of the manufacturing method of the polarizer of this invention. It is a figure which shows the structural example of the photo-alignment apparatus of this invention. It is a figure which shows the other structural example of the optical orientation apparatus of this invention. It is a figure which shows the example of the arrangement | positioning form of the polarizer in the photo-alignment apparatus of this invention. 10 is a graph showing measurement results of polarization characteristics of the polarizer of Example 8. FIG. 20 is an explanatory diagram illustrating a simulation model of Example 9. 10 is a graph showing a simulation result of Example 9. FIG. 10 is an explanatory diagram for explaining a simulation model of Example 10; It is a graph which shows the simulation result of Example 10. FIG. It is a graph which shows the simulation result of Example 11-Example 13. FIG. It is a graph which shows the measurement result of the polarization characteristic of the polarizer of Example 14.

The present invention relates to a polarizer.
Hereinafter, the polarizer of the present invention will be described.

  The polarizer of the present invention has a thin line in which a plurality of lines are arranged in parallel in a straight line, the thin line has a polarizing material layer containing a polarizing material, and the extinction ratio of light having a wavelength of 250 nm is 40 or more. It is characterized by being.

Such a polarizer of the present invention will be described with reference to the drawings. FIG. 1 is a schematic plan view showing an example of the polarizer of the present invention, and FIG. 2 is a cross-sectional view taken along line AA of FIG. As illustrated in FIGS. 1 and 2, a polarizer 10 of the present invention has a thin line 2 in which a plurality of lines are arranged in parallel in a straight line, and the thin line 2 is made of a molybdenum silicide material as a polarizing material layer 3. It has a molybdenum silicide-based material layer to be contained, and has an extinction ratio of light with a wavelength of 250 nm of 40 or more.
In this example, the thin wire 2 is formed on the molybdenum silicide material layer that is the polarizing material layer 3 and has the silicon oxide layer 4 containing silicon oxide, and is a transparent substrate made of synthetic quartz glass. 1 is formed.

  According to the present invention, since the extinction ratio of short-wavelength light is excellent, it is possible to easily impart alignment regulating force to the photo-alignment film. In particular, since the extinction ratio of light having a short wavelength such as a wavelength in the ultraviolet region is excellent, a sufficient alignment regulating force can be imparted in a short time, and the production efficiency can be improved.

The polarizer of the present invention has fine wires.
Hereinafter, each structure of the polarizer of this invention is demonstrated in detail.

1. Thin wire The thin wire in the present invention is formed in a straight line and arranged in parallel, and has a polarizing material layer.

(1) Polarizing material layer The polarizing material layer contains a polarizing material.

Such a polarizing material is not particularly limited as long as a desired extinction ratio can be obtained, and may vary depending on the shape of the polarizing material layer, such as a predetermined thickness. Can be selected from those satisfying the refractive index and extinction coefficient.
In the present invention, the refractive index and extinction coefficient are values at a wavelength of 250 nm unless otherwise specified.

The refractive index and extinction coefficient of the polarizing material are such that the refractive index is in the range of 2.0 to 3.2 and the extinction coefficient is in the range of 2.7 to 3.5. preferable. This is because the extinction ratio can be improved. Of these, the refractive index is preferably in the range of 2.0 to 2.8 and the extinction coefficient is preferably in the range of 2.9 to 3.5. In particular, the refractive index is 2.0 to 2. .6, and the extinction coefficient is preferably in the range of 3.1 to 3.5. This is because both the extinction ratio and the P-wave transmittance can be excellent over a wide wavelength range of 200 nm to 400 nm in the ultraviolet light region. This is because the extinction ratio and the transmittance can be made particularly excellent in the wavelength range of 250 nm to 370 nm.
The refractive index and extinction coefficient are within the range of 2.3 to 2.8 and the extinction coefficient from the viewpoint that the polarization axis rotation amount of the polarized light can be small. The attenuation coefficient is preferably in the range of 1.4 to 2.4. In particular, the refractive index is preferably in the range of 2.3 to 2.8 and the extinction coefficient is preferably in the range of 1.7 to 2.2. In particular, the refractive index is 2.4 to 2. It is preferable that it is in the range of 8, and the extinction coefficient is in the range of 1.8 to 2.1.
This is because the extinction ratio can be made a good value and the polarization axis rotation amount can be made small.
This is because, in particular, the extinction ratio and the transmittance can be made excellent in the wavelength range of 240 nm to 280 nm, and the polarization axis rotation amount of the polarized light can be made small.
The method for measuring the refractive index and extinction coefficient is not particularly limited, and examples include a method of calculating from a spectral reflection spectrum, a method of measuring using an ellipsometer, and an Abbe method. An example of the ellipsometer is UVSEL manufactured by Joban-Evon. In addition, the refractive index of this case is a value measured by VUV-VASE manufactured by Woollam.

As a polarizing material satisfying such a refractive index and extinction coefficient, specifically, a molybdenum silicide-based material containing molybdenum (Mo) and silicon (Si) (hereinafter sometimes referred to as a MoSi-based material), Alternatively, a nitride-based molybdenum silicide material can be used, and among them, a molybdenum silicide-based material is preferable. It is easy to adjust the refractive index and extinction coefficient depending on the contents of elements such as Mo and Si, nitrogen and oxygen contained in the molybdenum silicide material. This is because it is easy to satisfy the coefficient. Further, it has light resistance to short wavelengths in the ultraviolet region, and is suitable for alignment of a photo-alignment film for liquid crystal display devices.
In addition, the use of molybdenum silicide-based materials enables the extinction ratio to be kept high with a design in which the thickness of the thin wire is reduced, the processing accuracy is excellent, and further thinning and pitching are possible. is there.
Furthermore, compared with an aluminum material known to be used as a conventional polarizing material, it has excellent resistance to acids and alkalis, can be washed and used repeatedly, and is a photo-alignment film for liquid crystal display devices, etc. It is because it is suitable for use in orientation.

  The molybdenum silicide-based material is not particularly limited as long as it contains molybdenum (Mo) and silicon (Si) and can satisfy a refractive index and an extinction coefficient capable of obtaining a desired extinction ratio. For example, molybdenum silicide (MoSi), molybdenum silicide oxide (MoSiO), molybdenum silicide nitride (MoSiN), molybdenum silicide oxynitride (MoSiON), and the like can be given. It is because it can be made excellent in extinction ratio by being the said material.

The polarizing material is contained as a main raw material of the polarizing material layer.
Here, containing as the main raw material specifically means that the content of the polarizing material in the polarizing material layer is 70% by mass or more, and in the present invention, It is preferably 90% by mass or more, particularly 100% by mass, that is, the polarizing material layer is preferably made of the polarizing material. It is because it is easy to set it as the said extinction ratio by being the said content.
The content measuring method is not particularly limited as long as the content can be measured with high accuracy. For example, a method of performing XPS surface analysis on the cross section of the thin wire can be mentioned. .

As a kind of polarizing material contained in the above-mentioned polarizing material layer, it may consist of only one kind or a combination of two or more kinds. When two or more kinds of polarizing materials are used, the polarizing material layer may be a single layer or may include a plurality of layers obtained by combining layers containing each polarizing material.
In the present invention, it is particularly preferable that the polarizing material layer is a single layer containing one kind of polarizing material. Since it is a single layer, it is easy to manufacture and process, and a highly accurate polarizer can be manufactured stably.

The content of the polarizing material layer in the fine wire is not particularly limited as long as a desired extinction ratio can be obtained.
Specifically, the content of the polarizing material layer in the fine line is preferably 80% by mass or more, and particularly preferably 90% by mass or more, and particularly 100% by mass, that is, the fine line is It is preferable that only the polarizing material layer is included. This is because it is easy to obtain the above extinction ratio by being the above content. Further, the above content means the mass ratio of the polarizing material layer in the cross section in the width direction of the fine wire, and this measuring method. The method is not particularly limited as long as it is a method capable of measuring the content with high accuracy. For example, a method similar to the method for measuring the content of the polarizing material can be used.

  The shape of the polarizing material layer in a sectional view is not particularly limited as long as a desired extinction ratio can be obtained. For example, the polarizing material layer may have a square shape such as a square or a rectangle.

(2) Fine wire The thin wire in the present invention has at least the polarizing material layer and may have only the polarizing material layer, but other materials other than the polarizing material are mainly used as necessary. It may have a non-polarizing material layer included as a raw material.

  The other material contained in the non-polarizing material layer is not particularly limited as long as a desired extinction ratio can be obtained. For example, when a molybdenum silicide material is used as the polarizing material, Examples thereof include silicon oxide. In the case where a silicon oxide layer containing silicon oxide as a non-polarizing material is formed on a molybdenum silicide material layer containing a molybdenum silicide material as the polarizing material, the above method is performed by dry etching the molybdenum silicide material film. This is because a thin wire having a structure can be obtained, and a thin wire including the molybdenum silicide-based material layer can be easily formed and also functions as a protective film.

  Where the polarizing material layer is a molybdenum silicide-based material layer containing a molybdenum silicide-based material as a polarizing material, and the non-polarizing material layer is a silicon oxide layer containing silicon oxide as the non-polarizing material, the formation location of the silicon oxide layer Can be formed on the molybdenum silicide-based material layer, and when the molybdenum silicide-based material layer is formed on the transparent substrate, the surface of the molybdenum silicide-based material layer on the transparent substrate side It is preferable that it is formed so as to cover the entire surface other than. This is because it is easy to form a thin line including the molybdenum silicide material layer.

The film thickness of the silicon oxide layer is not particularly limited as long as a desired extinction ratio can be obtained, but it is preferably as thin as possible from the viewpoint of a high extinction ratio, for example, 10 nm or less. In particular, the thickness is preferably 6 nm or less, and particularly preferably 4 nm or less. This is because the film thickness can be excellent in the extinction ratio. Further, the lower limit of the film thickness is not particularly limited because it is preferably as thin as possible, but is preferably 2 nm or more because of easy production.
The film thickness of the silicon oxide layer refers to the maximum thickness from the surface of the polarizing material layer, and specifically refers to the thickness indicated by d in FIG.
As a method for measuring the film thickness, a general measurement method in the field of polarizers can be used. For example, by measuring the shape of the film surface layer with AFM and measuring the polarization characteristics with a transmission ellipsometer, The composition constituting the film and the respective film thicknesses can be obtained.

The film thickness of the thin wire is not particularly limited as long as it can have a desired extinction ratio. However, the thicker the film thickness, the higher the extinction ratio, and the thinner the film thickness, P Since the wave transmittance tends to increase, it can be set in consideration of the balance between the extinction ratio and the P-wave transmittance.
In the present invention, the film thickness is preferably in the range of 60 nm to 180 nm. Especially, it is preferable to exist in the range of 80 nm-160 nm, and it is especially preferable that it is the range of 100 nm-150 nm.
In addition, by suppressing the film thickness to a low level, accuracy during resist pattern formation by photolithography, imprint lithography, and etching processing is improved, and a highly accurate polarizer can be manufactured. In addition, resistance to physical cleaning such as ultrasonic cleaning using megasonic is improved.
The film thickness of the fine wire is the maximum thickness among the thicknesses in the direction perpendicular to the longitudinal direction and the width direction of the fine wire. When the fine wire has a non-polarizing material layer, the non-polarizing material layer is Also means a film thickness including Specifically, it refers to the thickness indicated by a in FIG.
The thin wires may have different thicknesses in one polarizer, but are usually formed with the same thickness.

The width of the thin line is not particularly limited as long as it can have a desired extinction ratio, but the wider the width, the higher the extinction ratio, and the wider the P-wave transmittance. Therefore, considering the balance between the transmittance of the P wave and the extinction ratio, for example, it can be in the range of 30 nm to 80 nm.
The width of the fine line refers to the length in the direction perpendicular to the longitudinal direction of the fine line. When the thin line includes a non-polarizing material layer, the width includes the non-polarizing material layer. Specifically, it refers to the length indicated by b in FIG.
The width of the thin line may include one having different widths in one polarizer, but is usually formed with the same width.

  The duty ratio of the fine line, that is, the ratio of the width of the fine line to the pitch (width / pitch) is not particularly limited as long as it can have a desired extinction ratio. It can be in the range of 0.25 to 0.70, and is preferably in the range of 0.30 to 0.50, particularly preferably in the range of 0.30 to 0.40. . This is because when the duty ratio is within the above range, both the extinction ratio and the P-wave transmittance can be made good values.

The pitch of the thin line is not particularly limited as long as it can have a desired extinction ratio, and varies depending on the wavelength of light used for generating linearly polarized light, It can be set to half or less of the wavelength of the light. More specifically, when the light is ultraviolet light, the pitch can be, for example, in the range of 80 nm to 150 nm, and preferably in the range of 100 nm to 120 nm. It is preferable to be in the range of 100 nm to 110 nm. This is because the pitch is excellent in the extinction ratio even for light having a wavelength of 300 nm or less.
In addition, the pitch of the said thin wire | line means the maximum width of the pitch between the thin wires adjacent to the width direction, and when a thin wire | line contains a non-polarizing material layer, it also includes a non-polarizing material layer. Specifically, the width indicated by c in FIG.
Moreover, although the pitch of the said thin wire | line may include the thing of a different pitch in one polarizer, it is normally formed with the same pitch.

  The number and length of the fine wires are not particularly limited as long as they can have a desired extinction ratio, and are appropriately set according to the use of the polarizer of the present invention. It is.

2. Transparent substrate Although the polarizer of this invention has the said fine wire, it has a transparent substrate with which the said fine wire is formed normally.

The transparent substrate is not particularly limited as long as it can stably support the fine wires, has excellent light transmittance, and can be less deteriorated by exposure light. For example, optically polished synthetic quartz glass, fluorite, calcium fluoride, and the like can be used. However, there are usually used synthetic quartz glass that is frequently used and stable in quality. In the present invention, synthetic quartz glass can be preferably used. This is because the quality is stable and there is little deterioration even when short wavelength light, that is, high energy exposure light is used.
The thickness of the transparent substrate can be appropriately selected according to the use and size of the polarizer of the present invention.

3. Polarizer The polarizer of the present invention has the above-mentioned thin wire and has an extinction ratio of light having a wavelength of 250 nm of 40 or more.

The extinction ratio (P-wave transmittance / S-wave transmittance) of light having a wavelength of 250 nm is not particularly limited as long as it is 40 or more, but is preferably 50 or more, and more preferably 60 or more. It is preferable. It is because the alignment control force to a photo-alignment layer can be stably provided because it is the said range.
Moreover, since it is preferable that the extinction ratio is larger, the upper limit is not particularly limited.
As the method for measuring the extinction ratio, a general measurement method in the field of polarizers can be used. For example, a transmission ellipsometer capable of measuring the polarization characteristics of ultraviolet light, such as VUV- It can be measured by using a transmission ellipsometer such as VASE.

The P wave transmittance of the polarizer (P wave component in outgoing light / P wave component in incident light) is not particularly limited as long as a desired extinction ratio can be obtained. The light with a wavelength of 250 nm is preferably 0.3 or more, more preferably 0.4 or more, and particularly preferably 0.6 or more. This is because the P-wave transmittance can efficiently impart an alignment regulating force to the photo-alignment layer.
In addition, as a measuring method of P wave transmittance, a general measuring method in the field of a polarizer can be used. For example, a transmission ellipsometer capable of measuring the polarization characteristics of ultraviolet light, for example, manufactured by Woollam Co., Ltd. It can be measured by using a transmission ellipsometer such as VUV-VASE.

The polarizer is preferably used for generating linearly polarized light of short-wavelength light such as in the ultraviolet region, and in particular, for generating linearly polarized light of light within a wavelength range of 200 nm to 400 nm. preferable.
As a material of the photo-alignment film, a material that is aligned by light having a wavelength of about 260 nm, a material that is aligned by light of about 300 nm, and a material that is aligned by light of about 365 nm are known. A lamp is used. This is because a polarizer including the molybdenum silicide material layer can be used for the alignment of these photo-alignment films.
Further, when the refractive index of the polarizing material is in the range of 2.0 to 3.2 and the extinction coefficient of the polarizing material is in the range of 2.7 to 3.5, the polarized light The child is preferably used for generating linearly polarized light in the range of 200 nm to 400 nm, and more preferably used for generating linearly polarized light in the range of 240 nm to 400 nm, particularly 240 nm to 370 nm. It is preferably used for generating linearly polarized light within the range. This is because when the polarizing material is used, the light wavelength can exhibit excellent characteristics in both the extinction ratio and the P-wave transmittance within the above range.
This is because the extinction ratio and the P-wave transmittance are excellent over a wide range in the ultraviolet region, so that the same polarizer can be used for a plurality of types of photo-alignment films having different sensitivity wavelengths.
Further, when the refractive index of the polarizing material is in the range of 2.3 to 2.8 and the extinction coefficient of the polarizing material is in the range of 1.4 to 2.4, the polarization The child is preferably used for generating linearly polarized light in the range of 200 nm to 350 nm, and more preferably used for generating linearly polarized light in the range of 240 nm to 300 nm, particularly 240 nm to 280 nm. It is preferably used for generating linearly polarized light within the range. In the case of the polarizing material, the light wavelength can exhibit excellent characteristics in both extinction ratio and P-wave transmittance within the above range, and the polarization axis rotation amount of the polarized light is small. Because it can be done. In particular, it can be suitably used as a material for a photo-alignment film that is aligned at a wavelength of about 260 nm.
In addition, for the generation of linearly polarized light of light in a predetermined wavelength range, it is sufficient that the light irradiated to the polarizer of the present invention includes light in the predetermined wavelength range, and in particular, in the predetermined wavelength range. It mainly contains light, that is, the energy of light in a predetermined wavelength range is preferably 50% or more of the total energy of light irradiated on the polarizer, and particularly preferably 70% or more of the total energy, In particular, 90% or more of the total energy is preferable.
Moreover, in this invention, it is preferable to use for the orientation control force provision to the optical alignment film for liquid crystal display devices which clamps liquid crystal material in a liquid crystal display device. This is because the alignment regulating force can be effectively applied to the photo-alignment film.

A method for producing the polarizer of the present invention will be described.
FIG. 3 is a process diagram showing an example of a method for producing a polarizer according to the present invention. As illustrated in FIG. 3, first, the refractive index and extinction coefficient of the polarizing material capable of setting the extinction ratio of the light having a wavelength of 250 nm of the polarizer to 40 or more are determined by simulation, and the refractive index and extinction coefficient are determined. A polarizing material satisfying the extinction coefficient is selected (not shown). Next, a transparent substrate 1 is prepared (FIG. 3A), and a polarizing material film 3 ′ made of a selected polarizing material is formed on the transparent substrate by sputtering, thereby forming the transparent substrate and the transparent substrate. Then, a polarizer substrate having a polarizing material film containing a polarizing material is formed (FIG. 3B).
As the polarizer substrate, a polarizing material processing hard mask may be provided on the polarizing material film 3 '(not shown).
Next, a patterned resist 11 is formed by photolithography, and etching is performed using the patterned resist 11 as a mask (FIG. 3C), thereby forming a thin line 2 including the polarizing material layer 3 (FIG. 3). 3 (d)).
Alternatively, the silicon oxide film 4 may be formed by forming an oxide film on the surface of the molybdenum silicide material layer 3 as the polarizing material layer.
When the polarizer substrate has a hard mask formed on the polarizing material film, the hard mask is etched using the resist 11 as an etching mask, and the polarizing material film is formed using the patterned hard mask as an etching mask. It can be etched.
By using the hard mask as an etching mask in this way, there is an advantage that a fine pattern processing of the polarizing material film can be performed with higher accuracy.
Then, a desired polarizer is obtained by peeling off the hard mask. If desired performance can be obtained even with the hard mask left, the hard mask may be left.

As the material for the hard mask, when the polarizing material film is a molybdenum silicide material, a chromium material can be used. The chromium-based material functions as an etching mask when etching the molybdenum silicide-based material.
Examples of the chromium-based material include chromium, chromium oxide, chromium nitride, and chromium oxynitride.
The thickness of the hard mask is preferably enough to withstand the etching of the polarizing material film. When the polarizing material film is about 100 nm, the thickness is preferably about 5 nm to 15 nm.
The hard mask can be formed on the polarizing material film by sputtering or the like.

FIG. 4 is a diagram illustrating a configuration example of a photo-alignment apparatus according to the present invention.
A photo-alignment apparatus 20 shown in FIG. 4 includes a polarizer unit 21 in which the polarizer 10 of the present invention is housed and an ultraviolet light lamp 22, and the ultraviolet light irradiated from the ultraviolet light lamp 22 is applied to the polarizer unit 21. Polarization is performed by the accommodated polarizer 10, and this polarized light (polarized light 24) is applied to the photo-alignment film 25 formed on the work 26, thereby imparting alignment regulating force to the photo-alignment film 25. Is.
Further, the photo-alignment apparatus 20 is provided with a mechanism for moving the work 26 on which the photo-alignment film 25 is formed. By moving the work 26, the entire surface of the photo-alignment film 25 is irradiated with the polarized light 24. Can do. For example, in the example shown in FIG. 4, the work 26 moves in the right direction in the figure (the arrow direction in FIG. 4).

  In the example shown in FIG. 4, the work 26 is shown as a rectangular flat plate. However, in the present invention, the form of the work 26 is not particularly limited as long as it can irradiate the polarized light 24. For example, the work 26 may be in the form of a film, or may be in the form of a strip (web) so that it can be wound.

  In the present invention, it is preferable that the ultraviolet lamp 22 is capable of irradiating ultraviolet light having a wavelength of 240 nm or more and 400 nm or less, and the photo-alignment film 25 applies ultraviolet light having a wavelength of 240 nm or more and 400 nm or less. It is preferable that it has sensitivity to it. Since the photo-alignment device 20 includes the polarizer 10 according to the present invention, which has an excellent extinction ratio with respect to ultraviolet light in the above wavelength range and has a high P-wave transmittance, ultraviolet light in the above wavelength range. This is because it is possible to efficiently apply the alignment regulating force to the photo-alignment film having a high sensitivity, and the productivity can be improved.

  Further, in order to efficiently irradiate the polarizer with the light from the ultraviolet light lamp 22, the photo-alignment device 20 applies ultraviolet light to the back side (the side opposite to the polarizer unit 21) or the side surface of the ultraviolet light lamp 22. It is preferable to have a reflecting mirror 23 that reflects.

  Further, in order to efficiently apply an alignment regulating force to the large-area photo-alignment film 25, as shown in FIG. 4, a rod-shaped lamp is used as the ultraviolet lamp 22 to move the work 26 (see FIG. It is preferable to configure the photo-alignment device 20 so that the polarized light 24 that is a long irradiation region is irradiated in a direction orthogonal to the arrow direction in FIG.

  In this case, the polarizer unit 21 is also in a form suitable for irradiating the large-area photo-alignment film 25 with the polarized light 24, but it is difficult to produce a large-area polarizer. It is technically and economically preferable to arrange a plurality of polarizers in the polarizer unit 21.

Moreover, the structure provided with a some ultraviolet light lamp may be sufficient as the photo-alignment apparatus based on this invention.
FIG. 5 is a diagram showing another configuration example of the optical alignment apparatus according to the present invention.
As shown in FIG. 5, the photo-alignment device 30 includes two ultraviolet light lamps 32, and the polarizer 10 of the present invention is accommodated between each ultraviolet light lamp 32 and the work 36. A polarizer unit 31 is provided. Each ultraviolet lamp 32 is provided with a reflecting mirror 33.

  Thus, by providing a plurality of ultraviolet light lamps 32, the irradiation amount of the polarized light 34 applied to the photo-alignment film 35 formed on the workpiece 36 is increased as compared with the case where one ultraviolet light lamp 32 is provided. Can be made. Therefore, the moving speed of the workpiece 36 can be increased as compared with the case where one ultraviolet light lamp 32 is provided, and as a result, productivity can be improved.

  In the example shown in FIG. 5, a configuration in which two ultraviolet lamps 32 are arranged in parallel in the moving direction of the workpiece 36 (the arrow direction in FIG. 5) is shown, but the present invention is not limited to this. The plurality of ultraviolet light lamps may be arranged in a direction orthogonal to the moving direction of the work 36, and a plurality of ultraviolet light lamps may be provided in both the moving direction of the work 36 and the direction orthogonal thereto. It may be a configuration in which is arranged.

  5 shows a configuration in which one polarizer unit 31 is provided for one ultraviolet lamp 32, the present invention is not limited to this, and for example, a plurality of polarizer units 31 may be used. The configuration may be such that one polarizer unit is provided for each ultraviolet lamp. In this case, it is sufficient that one polarizer unit has a size that can include irradiation regions of a plurality of ultraviolet lamps.

  FIG. 6 is a diagram showing an example of the arrangement of polarizers in the photo-alignment apparatus according to the present invention. 6 (a) to 6 (d) all show a form in which the plate-like polarizers 10 are arranged in a plane facing the film surface of the photo-alignment film. Yes.

  For example, in the optical alignment apparatus 20 shown in FIG. 4, when the band-shaped polarized light 24 is irradiated in a direction orthogonal to the moving direction of the workpiece 26, the polarizer unit 21 has the configuration shown in FIG. Thus, it is efficient to arrange a plurality of polarizers 10 in a direction orthogonal to the moving direction (arrow direction) of the workpiece 26. This is because the number of polarizers 10 can be reduced.

  On the other hand, when the area of the polarizer 10 is small, or when the photo-alignment apparatus includes a plurality of ultraviolet lamps, as shown in FIG. 6B, it is orthogonal to the moving direction (arrow direction) of the workpiece. In addition to the direction to perform, it is preferable to arrange a plurality of polarizers 10 in the direction along the moving direction (arrow direction). This is because the light from the ultraviolet lamp can be irradiated to the photo-alignment film without waste, and the productivity can be improved.

Here, in the present invention, as shown in FIGS. 6 (c) and 6 (d), a plurality of polarizers are arranged so that they are not aligned in a line along the workpiece movement direction (arrow direction). It is preferable that the positions of the adjacent polarizers are shifted and arranged in a direction (vertical direction in the drawing) orthogonal to the moving direction of the workpiece.
In other words, in the present invention, a plurality of boundary portions between a plurality of polarizers adjacent in the direction orthogonal to the moving direction of the photo-alignment film are not continuously connected to the moving direction of the photo-alignment film. It is preferable that a polarizer is disposed.
This is because polarized light usually does not occur at the boundary between the polarizers, and this prevents the boundary from adversely affecting the photo-alignment film.

Here, in the arrangement form shown in FIG. 6C, the plurality of arranged polarizers all have the same shape and the same size, and the positions of the polarizers adjacent in the left-right direction are polarized. In this arrangement, the child is shifted in the vertical direction in steps of 1/2 the size of the child in the vertical direction.
Further, in the arrangement form shown in FIG. 6D, the plurality of arranged polarizers all have the same shape and the same size, and the positions of the polarizers adjacent in the left-right direction are in the vertical direction. In this arrangement, the vertical shift is performed in steps smaller than ½ of the vertical size.

The above will be described in more detail.
In the arrangement shown in FIG. 6C, the boundary portion 41 between the polarizer 10a and the polarizer 10b adjacently arranged in the vertical direction extends in the horizontal direction by the polarizer 10c and the polarizer 10d arranged in the horizontal direction. It is blocked from going.
That is, in the arrangement form shown in FIG. 6C, it is prevented that the boundary portion between the polarizers adjacently arranged in the vertical direction is continuously connected in the horizontal direction.
Therefore, when the arrangement shown in FIG. 6C is adopted and the photo-alignment film is irradiated with polarized light, the adverse effect caused by the boundary between the polarizers continuously affects the photo-alignment film. Can be suppressed.

Similarly, also in the arrangement form shown in FIG. 6D, it is prevented that the boundary portion between the polarizers adjacently arranged in the vertical direction is continuously connected in the horizontal direction.
Therefore, when the arrangement shown in FIG. 6 (d) is adopted to irradiate the photo-alignment film with polarized light, the adverse effect caused by the boundary between the polarizers continuously affects the photo-alignment film. Can be suppressed.

In the arrangement shown in FIG. 6 (c), since it is shifted in the vertical direction in steps of 1/2 the size of the polarizer in the vertical direction, it is in the horizontal direction (workpiece movement direction). On the other hand, the vertical position of the boundary portion 41 is aligned for every two polarizers.
On the other hand, in the arrangement form shown in FIG. 6D, the vertical position of the boundary portion 42 is shifted in the vertical direction in steps smaller than ½ of the vertical size of the polarizer. It becomes harder to align.
Therefore, in the arrangement form shown in FIG. 6 (d), it is possible to further suppress the adverse effects caused by the boundary portion between the polarizers from being continuously applied to the photo-alignment film.

  In the example shown in FIGS. 6A to 6D, the individual polarizers are arranged so that the side surfaces thereof are in contact with each other. However, the present invention is not limited to this form, and is adjacent to each other. A form in which a boundary portion between the matching polarizers has a gap may be employed.

  Moreover, it is good also as a form by which the clearance gap does not arise in the boundary part between polarizers by overlapping the edge part of adjacent polarizers mutually.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

  The present invention will be described more specifically with reference to the following examples.

[Example 1]
RCWA described in “Numerical analysis of diffractive optical elements and its application” (Maruzen Publishing Co., Ltd., Kodate Kashiko custom) for a thin line model including only a polarizing material layer made of a polarizing material with a film thickness of 80 nm width and a pitch of 72 nm and 120 nm. Based on (Rigorous Coupled Wave Analysis), the extinction ratio of light having a wavelength of 250 nm with respect to the refractive index and the extinction coefficient was simulated. The results are shown in Table 1 below.
From Table 1, when the refractive index possible with the MoSi-based material is in the range of 2.0 to 3.0 and the extinction coefficient is in the range of 2.7 to 3.5, the extinction ratio is 40 or more. A value of (within a range of 200.4 to 1203.8) was shown.

[Example 2]
The same simulation as in Example 1 was performed except that the thin line model was a thin line model with a film thickness of 80 nm and widths and pitches of 60 nm and 120 nm. The results are shown in Table 2 below.
From Table 2, when the refractive index possible with the MoSi-based material is in the range of 2.0 to 3.0 and the extinction coefficient is in the range of 2.7 to 3.5, the extinction ratio is 40 or more. (In the range of 72.9 to 263.9).

[Example 3]
The same simulation as in Example 1 was performed except that the thin line model was a thin line model with a film thickness of 80 nm and widths and pitches of 48 nm and 120 nm. The results are shown in Table 3 below.
From Table 3, when the extinction coefficient possible with the MoSi-based material is in the range of 2.7 to 3.1 and the refractive index is in the range of 2.2 to 3.0 (condition 3-1), When the extinction coefficient is in the range of 3.2 to 3.3 and the refractive index is in the range of 2.1 to 3.0 (condition 3-2), or the extinction coefficient is 3.4 to 3 When the refractive index is in the range of 0.5 and the refractive index is in the range of 2.0 to 3.0 (condition 3-3), the extinction ratio is 40 or more. Specific extinction ratios are within the range of 41.8 to 85.1 under the condition 3-1, within the range of 40.9 to 79.7 under the condition 3-2, and 40.0 under the condition 3-3. It was in the range of ˜80.1, and the value of the extinction ratio of the entire thin wire model was in the range of 40.0 to 85.1.

[Example 4]
The same simulation as in Example 1 was performed except that the thin line model was a thin line model with a film thickness of 60 nm and widths and pitches of 72 nm and 120 nm. The results are shown in Table 4 below.
From Table 4, when the refractive index possible with the MoSi-based material is in the range of 2.0 to 3.0 and the extinction coefficient is in the range of 2.7 to 3.5, the extinction ratio is 40 or more. (Within a range of 52.8 to 309.6).

[Example 5]
The same simulation as in Example 1 was performed except that the thin line model was a thin line model having a film thickness of 60 nm and widths and pitches of 60 nm and 120 nm. The results are shown in Table 5 below.
From Table 5, when the extinction coefficient possible by the MoSi-based material is in the range of 2.7 to 2.9 and the refractive index is in the range of 2.4 to 3.0 (Condition 5-1), When the extinction coefficient is in the range of 3.0 to 3.3 and the refractive index is in the range of 2.3 to 3.0 (condition 5-2), or the extinction coefficient is 3.4 to 3 When the refractive index is in the range of 0.5 and the refractive index is in the range of 2.2 to 3.0 (condition 5-3), the extinction ratio is 40 or more. Specific extinction ratios are within the range of 43.4 to 85.1 under Condition 5-1, within the range of 40.2 to 78.1 under Condition 5-2, and 41.2 under Condition 5-3. It was in the range of ˜76.9, and the extinction ratio was 40.2 to 85.1 as the entire thin line model.

[Example 6]
The same simulation as in Example 1 was performed except that the thin line model was a thin line model having a film thickness of 60 nm and widths and pitches of 48 nm and 120 nm. The results are shown in Table 6 below.
From Table 6, a region having an extinction ratio of 40 or more when the refractive index is in the range of 2.0 to 3.0 and the extinction coefficient is in the range of 2.7 to 3.5, which is possible with the MoSi-based material. However, the extinction ratio was 40 or more (41.7) under some conditions where the extinction coefficient was in the range of 1.5 to 2.4 and the refractive index was in the range of 2.6 to 3.0. In the range of ~ 493.0).

[Example 7]
The same simulation as in Example 1 was performed except that the thin line model was a thin line model with a film thickness of 40 nm and widths and pitches of 72 nm and 120 nm. The results are shown in Table 7 below.
From Table 7, when the extinction coefficient possible by the MoSi-based material is in the range of 3.0 to 3.5 and the refractive index is 3.0, the extinction ratio is 40 or more (40.0 to 42.42). 4).

[Reference Example 1]
The same simulation as in Example 1 was performed except that the thin line model was a thin line model with a film thickness of 40 nm and widths and pitches of 60 nm and 120 nm. The results are shown in Table 8 below.
From Table 8, conditions showing an extinction ratio of 40 or more were not obtained.

[Reference Example 2]
The same simulation as in Example 1 was performed except that the thin line model was a thin line model with a film thickness of 40 nm and widths and pitches of 48 nm and 120 nm. The results are shown in Table 9 below.
From Table 9, the conditions showing an extinction ratio of 40 or higher were not obtained.

(Simulation summary)
The extinction ratio can be made 40 or more by selecting the range of the refractive index and the extinction coefficient from the shaded portion from the table showing the correlation between the refractive index and extinction coefficient and the extinction ratio in Tables 1 to 9. Was confirmed.
For example, in the case of a thin wire (polarizing material layer) of Example 1 (film thickness 86 μm, width 72 μm, pitch 120 μm), the extinction ratio is within a range of a refractive index of 2 or more and an extinction coefficient of 1.5 to 3.5. It was confirmed that it could be 40 or more.

[Example 8]
A synthetic quartz glass with a film thickness of 6.35 mm is prepared as a transparent substrate, and molybdenum silicide is formed by a reactive sputtering method in a mixed gas atmosphere of argon nitrogen using a mixed target of molybdenum and silicon (Mo: Si = 1: 2 mol%). A nitrided molybdenum silicide film having a thickness of 120 nm was formed as the system material film. The amount of nitrogen was about half of the Mo content.
Further, a chromium oxynitride film as a hard mask was formed on the molybdenum silicide film at 7 nm by a sputtering method.

Next, a patterned resist having a line and space pattern with a pitch of 100 nm was formed on the hard mask. Thereafter, a hard mask made of a chromium-based material is dry-etched using a mixed gas of chlorine and oxygen as an etching gas, followed by dry-etching the molybdenum silicide-based material film using SF ₆ , and then the hard mask is peeled off. Thus, a polarizer was obtained.
The widths, thicknesses, and pitches of the thin lines of the obtained polarizer were 34 nm, 120 nm, and 100 nm, respectively, as measured by Vistec SEM measuring device LWM9000 and VEECO AFM device DIMENSION-X3D.

(Structural evaluation of thin wires)
The structure of the fine wire of the polarizer of Example 8 was evaluated by a transmission ellipsometer (VUV-VASE manufactured by Woollam).
As a result, the thin wire has a molybdenum silicide-based material layer made of a molybdenum silicide-based material having a width and a thickness of 29.8 nm and 115.8 nm, respectively, and a film thickness on the upper surface and side surfaces of the molybdenum silicide-based material layer. It was confirmed to have an oxide film made of silicon oxide having a thickness of 4.2 nm and 4.2 nm, respectively.
In addition, the refractive index and extinction coefficient of the molybdenum silicide-based material layer, that is, the refractive index and extinction coefficient of the molybdenum silicide-based material (Mo: Si = 1: 2 mol%) are measured using a transmission ellipsometer (VUV-VASE manufactured by Woollam). ), The refractive index n at a wavelength of 250 nm was 2.30, and the extinction coefficient k at a wavelength of 250 nm was 3.24. The refractive index n at a wavelength of 365 nm was 3.94, and the extinction coefficient k was 2.85.

(Measurement of P wave transmittance and S wave transmittance)
The polarizer of Example 8 was measured using a transmission ellipsometer (VUV-VASE manufactured by Woollam Co., Ltd.) for P-wave transmittance of ultraviolet light (P-wave component in outgoing light / P-wave in incident light) within a wavelength range of 200 nm to 700 nm. Component) and S wave transmittance (S wave component in outgoing light / S wave component in incident light) were measured, and extinction ratio (P wave transmittance / S wave transmittance) was calculated. The results are shown in Table 10 and FIG.
As shown in Table 10 and FIG. 7, in the wavelength range of 240 nm to 400 nm, the P wave transmittance of the polarizer was 70.5% or more, and the extinction ratio was 79.5% or more.
In the wavelength range of 240 nm to 260 nm, the P wave transmittance of the polarizer was 70.5% or more, and the extinction ratio was 79.5 or more.
Further, in the wavelength range of 280 to 320 nm, the P wave transmittance of the polarizer was 73.7% or more, and the extinction ratio was 208.5 or more.
Further, in the wavelength range of 355 nm to 375 nm, the P wave transmittance of the polarizer was 79.6% or more, and the extinction ratio was 346.5 or more.
As materials for the photo-alignment film, those that are aligned by light having a wavelength of about 260 nm, those that are aligned by light of about 300 nm, and those that are aligned by light of about 365 nm are known. It was confirmed that it can be suitably used as a material for a photo-alignment film that is particularly aligned with light of about 365 nm.
Moreover, in the wavelength range of 200 nm to 600 nm, the S wave transmittance of the polarizer of Example 8 was 8.44% or less, and the extinction ratio was 10.9 or more.
In the wavelength range of 220 nm to 500 nm, the S wave transmittance of the polarizer of Example 8 was 2.69% or less, and the extinction ratio was 33.5 or more.
It was confirmed that the polarizer of Example 8 maintained an extinction ratio of 10 or more from a wavelength of about 200 nm to about 600 nm.
In general, the absorption spectrum of a photo-alignment film has a peak in a specific wavelength range, but is known to absorb light in a wide wavelength range.
For this reason, in a conventional polarizer, light in a wavelength range in which the extinction ratio is low is cut by a bandpass filter. For example, a polarizer with a thin wire made of aluminum cuts light in a wavelength range of 300 nm or less, and a polarizer with a thin wire made of titanium oxide emits light in a wavelength range of 300 nm or more. It was cut.
However, the above-described method has a disadvantage that the efficiency of applying the alignment regulating force to the photo-alignment film is also reduced due to the light cut.
On the other hand, the polarizer of the present invention can secure an extinction ratio of a certain level or more in a wide wavelength range as described above, so there is no need to use a band pass filter, and light in a wide wavelength range is regulated to be aligned in the photo-alignment film. It was confirmed that it can be used efficiently for imparting force.

[Example 9]
In the case where light having a wavelength of 250 nm is incident on the polarizer 10 shown in FIG. 8 at an azimuth angle of 45 degrees and an incident angle of 60 degrees from the side where the thin line is formed, “Numerical analysis of diffractive optical element and its application” ( A simulation model based on RCWA (Rigorous Coupled Wave Analysis) described in Maruzen Publishing, Kodate Kashiko) is created, and the refractive index n and extinction coefficient k of the polarizing material and the polarization axis of the polarized light emitted from the polarizer are The relationship of the rotation amount (°) was calculated. The results are shown in Table 11 below and FIG.

In the simulation model of Example 9, in order to facilitate calculation, the thin line of the polarizer 10 shown in FIG. 8 is a thin line model of a polarizing material layer (single layer structure) made of a polarizing material. The thin wires of the polarizer 10 had a thickness of 100 nm, a width of 33 nm, and a pitch of 100 nm.
The rotation amount of the polarization axis indicates the rotation amount (rotation angle) from this direction with reference to the direction of the polarization axis when the incident angle of incident light is 0 degree.

In the graph shown in FIG. 9, the ranges of the refractive index n and the extinction coefficient k indicated by m, n, o, p, q, and r are respectively the polarization axis at the azimuth angle of 45 degrees and the incident angle of 60 degrees. The range of rotation is +6 to +9 degrees, +3 to +6 degrees, 0 to +3 degrees, -3 to 0 degrees, -6 to -3 degrees, and -9 to -6 degrees. . Therefore, in the graph shown in FIG. 9, the range of the refractive index n and the extinction coefficient k is such that the rotation amount of the polarization axis is −3.0 degrees to +3.0 degrees at an azimuth angle of 45 degrees and an incident angle of 60 degrees. It is represented as a white area. Note that the black line passing through the approximate center of the white region indicates the refractive index n and the extinction coefficient k at which the rotation amount of the polarization axis is 0 degree.
On the other hand, the range of the refractive index n and the extinction coefficient k where the rotation amount of the polarization axis is −6.0 degrees to −3.0 degrees, and the rotation amount of the polarization axis is +3.0 degrees to +6.0 degrees. The range of the refractive index n and the extinction coefficient k is expressed as a light gray region in the graph shown in FIG.

  As shown in Table 11 and FIG. 9, the incident angle of the light incident on the polarizer is increased by appropriately selecting the ranges of the refractive index n and the extinction coefficient k of the polarizing material constituting the thin wire 2. However, it was confirmed that the rotation of the polarization axis of the polarized light can be suppressed.

[Example 10]
Next, regarding the case where light having a wavelength of 250 nm is incident on the polarizer 10 shown in FIG. 10 at an azimuth angle of 0 ° and an incident angle of 0 ° from the side where the thin line is formed, “Numerical analysis of diffractive optical element and its A simulation model based on RCWA (Rigorous Coupled Wave Analysis) described in "Application" (Maruzen Publishing, Kodate Kashiko) is used, and the relationship between the refractive index n and extinction coefficient k of the polarizing material constituting the thin line and the extinction ratio. Was calculated. The results are shown in Table 12 below and FIG.

  In the simulation model of Example 10, the thin line of the polarizer 10 shown in FIG. 10 is a thin line model of a polarizing material layer (single layer structure) made of a polarizing material in order to facilitate calculation. The thin wires of the polarizer 10 had a thickness of 100 nm, a width of 33 nm, and a pitch of 100 nm.

In FIG. 11, the ranges of the refractive index n and the extinction coefficient k indicated by s, t, u, and v are such that the extinction ratio is 10 ⁴ to 10 ⁵ , 10 ³ at an azimuth angle of 0 ° and an incident angle of 0 °, respectively. To 10 ⁴ , 10 ² to 10 ³ , 10 to 10 ^2, and 1 to 10 are shown.

Further, based on Tables 11 and 12 and FIGS. 9 and 11, the relationship between each refractive index and each extinction coefficient and the amount of rotation of the polarization axis, and the relationship between each refractive index and each extinction coefficient and the extinction ratio, When the refractive indexes are the same or close to each other, it was confirmed that the extinction ratio can be increased by using a material having a higher extinction coefficient than the extinction coefficient that minimizes the amount of polarization axis rotation as the polarizing material.
When a molybdenum silicide (MoSi) -based material is used, the range of the refractive index n and the extinction coefficient k at a wavelength of 250 nm is adjusted to 2.2 ≦ n ≦ 3.0 by adjusting the composition and the content of oxygen and nitrogen. Thus, it can be in the range of about 0.7 ≦ k ≦ 3.5. Among them, the refractive index and the extinction coefficient that can achieve a high extinction ratio and simultaneously suppress the rotation amount of the polarization axis are in the range of 2.3 to 2.8, and the extinction coefficient is It was confirmed that it was within the range of 1.4 to 2.4.
Of these, the refractive index is preferably in the range of 2.3 to 2.8, and the extinction coefficient is preferably in the range of 1.7 to 2.2. In particular, the refractive index is 2.4. It was confirmed that the effect became more remarkable when it was in the range of ˜2.8 and the extinction coefficient was in the range of 1.8 to 2.1.

[Example 11]
RCWA (Rigorous Coupled Wave) in the same manner as in Example 9 except that the refractive index n and extinction coefficient k of the polarizing material at a wavelength of 250 nm were 2.66 and 1.94, respectively, and the thickness of the thin wire was 150 nm. A simulation model based on (Analysis) was created, and the relationship between the rotation amount of the polarization axis of the polarized light emitted from the polarizer with respect to the incident angles (0 °, 10 °, 20 °, 30 °, 40 ° and 50 °) was calculated. . The results are shown in FIG.

[Example 12]
The refractive index n and extinction coefficient k of the polarizing material were set to Example 11 except that the refractive index n at a wavelength of 250 nm was 2.66, the extinction coefficient k was 1.94, and the thickness of the thin line was 170 nm. Similarly, the relationship of the rotation amount of the polarization axis of the polarized light emitted from the polarizer with respect to the incident angles (0 °, 10 °, 20 °, 30 °, 40 °, and 50 °) was calculated. The results are shown in FIG.

[Example 13]
Example 11 except that the refractive index n and extinction coefficient k of the polarizing material were set to 2.29 and extinction coefficient k of 3.24 at a wavelength of 250 nm, respectively, and the thickness of the thin line was set to 100 nm. In the same manner as above, the relationship of the rotation amount of the polarization axis of the polarized light emitted from the polarizer with respect to the incident angles (0 °, 10 °, 20 °, 30 °, 40 °, and 50 °) was calculated. The results are shown in FIG.

From FIG. 12, it was confirmed that even when the polarizing material is a molybdenum silicide-based material, the amount of rotation of the polarization axis, that is, the degree of influence on the axis deviation differs depending on the refractive index and the extinction coefficient.
It was confirmed that the material having the refractive index n of 2.66 and the extinction coefficient k of 1.94 has little polarization axis misalignment with respect to incident light having a wide incident angle.

[Example 14]
Synthetic quartz glass with a film thickness of 6.35 mm is prepared as a transparent substrate, and reactive sputtering is performed in a mixed gas atmosphere of argon, nitrogen, and oxygen using a mixed target of molybdenum and silicon (Mo: Si = 1 mol%: 2 mol%). A molybdenum silicide material film was formed by the method. Compared to the film formation of Example 8, nitrogen was increased in order to adjust the refractive index, and oxygen was slightly introduced to adjust the extinction coefficient. The film thickness was 100 nm.
Further, a chromium oxynitride film as a hard mask was formed on the molybdenum silicide material film by sputtering at 7 nm.
Thereafter, a polarizer was obtained by etching in the same manner as in Example 8.
The width, thickness, and pitch of the thin wires of the obtained polarizer were 36 nm, 100 nm, and 100 nm, respectively.

(Structural evaluation of thin wires)
The structure of the fine wire of the polarizer of Example 14 was evaluated using a transmission ellipsometer (VUV-VASE manufactured by Woollam).
As a result, the thin wire has a molybdenum silicide-based material layer made of a molybdenum silicide-based material having a width and a thickness of 31.8 nm and 95.8 nm, respectively, and the upper surface thickness and the side surface film thickness of the molybdenum silicide-based material layer. It was confirmed to have an oxide film made of silicon oxide having a thickness of 4.2 nm and 4.2 nm, respectively.
The refractive index and extinction coefficient of the molybdenum silicide-based material layer, that is, the refractive index n of the molybdenum silicide-based material (Mo: Si = 1 mol%: 2 mol%) at a wavelength of 250 nm is 2.66, and the extinction coefficient. k was 1.94.

(Measurement of P wave transmittance and S wave transmittance)
In the same manner as in Example 8, P wave transmittance and S wave transmittance were measured, and an extinction ratio was calculated. The results are shown in Table 13 and FIG.
As shown in Table 13 and FIG. 13, the P-wave transmittance of the polarizer was 48% or more and the extinction ratio was 40 or more in the wavelength range of 200 nm to 350 nm. Especially, in the range of 240 nm-300 nm, the P wave transmittance of the polarizer was 61% or more, and the extinction ratio was 142 or more. In particular, within the range of 240 nm to 280 nm, the P-wave transmittance of the polarizer was 61% or more, and the extinction ratio was 220 or more.
In particular, it was confirmed that the polarizer of this example can be suitably used as a material for a photo-alignment film that is aligned at a wavelength of about 260 nm.

DESCRIPTION OF SYMBOLS 1 ... Transparent substrate 2 ... Fine wire 3 ... Polarizing material layer 4 ... Non-polarizing material layer 10, 10a, 10b, 10c, 10d ... Polarizer 20, 30 ... Optical orientation apparatus 21, 31 ... Polarizer unit 22, 32. ..Ultraviolet light lamps 23, 33 ... reflecting mirrors 24, 34 ... polarized light 25, 35 ... photo-alignment films 26, 36 ... work pieces 41, 42 ... boundary portions

Claims (7)

It has fine lines arranged in parallel in a straight line,
The fine wire has a polarizing material layer containing a polarizing material,
The polarizing material is a molybdenum silicide-based material,
A polarizer characterized by having an extinction ratio of light having a wavelength of 250 nm of 40 or more. The polarizer is for imparting alignment regulating force to the photo-alignment film,
The polarizer according to claim 1, which is used for generating linearly polarized light having a wavelength in the ultraviolet region. A refractive index of light having a wavelength of 250 nm of the polarizing material is in a range of 2.0 to 3.2;
The polarizer according to claim 1 or 2, wherein an extinction coefficient of light having a wavelength of 250 nm of the polarizing material is in a range of 2.7 to 3.5. A refractive index of light having a wavelength of 250 nm of the polarizing material is in a range of 2.3 to 2.8,
The polarizer according to claim 1 or 2, wherein an extinction coefficient of light having a wavelength of 250 nm of the polarizing material is in a range of 1.4 to 2.4. The polarizing material layer has a thickness of 40 nm or more,
The polarizer according to any one of claims 1 to 4, wherein a pitch between the polarizing material layers is 150 nm or less. A photo-alignment device that polarizes ultraviolet light and irradiates the photo-alignment film,
A polarizer according to any one of claims 1 to 5 is provided,
A photo-alignment apparatus that irradiates the photo-alignment film with light polarized by the polarizer. A mechanism for moving the photo-alignment film is provided;
A plurality of the polarizers are provided in both the direction of movement of the photo-alignment film and the direction orthogonal to the direction of movement of the photo-alignment film;
The plurality of polarizers are arranged so that boundaries between the plurality of polarizers adjacent in the direction orthogonal to the moving direction of the photo-alignment film are not continuously connected to the moving direction of the photo-alignment film. The photo-alignment apparatus according to claim 6 , wherein