JP6554768B2 - Polarizer, laminated substrate, and photo-alignment apparatus - Google Patents

Description

  The present invention relates to a polarizer that polarizes light from a light source, a laminated substrate used for manufacturing the polarizer, and a photo-alignment device including the polarizer.

A liquid crystal display device generally has a structure in which a counter substrate on which driving elements are formed and a color filter are arranged to face each other and the periphery is sealed, and a gap is filled with a liquid crystal material. The liquid crystal material has refractive index anisotropy, and the pixel is switched on and off from the difference between the state where the liquid crystal material is aligned along the direction of the voltage applied to the liquid crystal material and the state where no voltage is applied. Can be displayed. Here, the substrate sandwiching the liquid crystal material is provided with an alignment film for aligning the liquid crystal material.
As the alignment film, for example, a film using a polymer material typified by polyimide is known, and the alignment film has an alignment regulating force by rubbing the polymer material with a cloth or the like. Become.
However, the alignment film to which the alignment regulating force is applied by such rubbing treatment has a problem that the cloth or the like remains as a foreign substance.

On the other hand, in the alignment film that expresses the alignment regulating force by irradiating linearly polarized light, that is, the photo-alignment film, the alignment regulating force can be applied without performing the rubbing treatment with the cloth as described above. In recent years, it has attracted attention because there is no defect that remains as a foreign object.
As an irradiation method of linearly polarized light for imparting alignment regulating force to such a photo-alignment film, a method of exposing through a polarizer is generally used. As the polarizer, one having a plurality of fine wires arranged in parallel is used, and as a material constituting the fine wires, aluminum or titanium oxide is used (for example, Patent Document 1).

Japanese Patent No. 4968165

  However, in a polarizer having a thin wire made of the material as described above, the extinction ratio (P-wave transmittance / S-wave transmittance) in the case of light having a short wavelength such as the ultraviolet region, that is, the above-described thin wire. To the transmittance of the polarization component (S wave) parallel to the above (the S wave component in the outgoing light / the S wave component in the incident light, hereinafter sometimes referred to simply as the S wave transmittance). The ratio of the transmittance of the polarized light component (P wave) perpendicular to the light beam (the P wave component in the outgoing light / the P wave component in the incident light, hereinafter simply referred to as P wave transmittance) is a specific wavelength. There was a problem that the belt was low.

  For example, a material using aluminum as a material constituting a thin wire has insufficient polarization characteristics such as an extinction ratio with respect to ultraviolet light having a wavelength of 300 nm or less, particularly ultraviolet light having a wavelength of 240 nm to 260 nm. In addition, a material using titanium oxide as a material constituting a thin wire has insufficient polarization characteristics such as an extinction ratio with respect to ultraviolet light having a wavelength of 300 nm or more, particularly ultraviolet light having a wavelength of 355 nm to 375 nm. It was.

  In order to solve the above problem, the present inventor made the fine wire of the polarizer from a material containing molybdenum silicide, and set the film thickness, pitch, and line width of the fine wire within a predetermined range, so that the wavelength is 240 nm or more and 400 nm. It has been found that an excellent extinction ratio and a high P-wave transmittance can be achieved for the following ultraviolet light, particularly for ultraviolet light having a wavelength of 240 nm to 260 nm and ultraviolet light having a wavelength of 355 nm to 375 nm. Yes.

  On the other hand, since the light from the light source is divergent light, the light from the light source enters the polarizer at various angles. In particular, when a long rod-shaped lamp is used as a light source, the light incident on the polarizer includes light having a large incident angle.

However, as the incident angle of light incident on the polarizer increases, the problem that the direction of the polarized light exiting from the polarizer rotates and deviates from the desired direction, that is, as the angle of incident light increases. This causes a problem that the amount of rotation of the polarization axis of the polarized light becomes large.
If the alignment regulating force is applied to the photo-alignment film in a state where the directions of the polarization axes are varied, there is a possibility that a portion where a desired alignment characteristic cannot be obtained is generated in the photo-alignment film.

  The present invention has been made in view of the above circumstances, and is a case where the incident angle of light incident on a polarizer is large while having a high extinction ratio with respect to short-wavelength light such as the ultraviolet region. However, it is a main object to provide a polarizer capable of suppressing the rotation of the polarization axis of polarized light.

  As a result of various studies, the present inventors have made the thin wire of the polarizer a multilayer structure having an extinction ratio improving layer for improving the extinction ratio and a polarization axis rotation suppressing layer for suppressing the rotation of the polarization axis of the polarized light, By adopting a configuration in which the polarization axis rotation suppression layer is provided on the incident side of the light incident on the polarizer with respect to the extinction ratio improving layer, the polarization axis of the polarized light rotates while having a high extinction ratio. The present invention has been completed.

  That is, the invention according to claim 1 of the present invention is a polarizer in which a plurality of thin wires are arranged in parallel on a transparent substrate, and the thin wires have an extinction ratio of polarized light emitted from the polarizer. An extinction ratio improving layer for improving, and a polarization axis rotation suppressing layer for suppressing the rotation of the polarization axis of polarized light emitted from the polarizer, and the rotation of the polarization axis relative to the extinction ratio improving layer In the polarizer, a suppression layer is provided on an incident side of light incident on the polarizer.

In the invention according to claim 2 of the present invention, the range of the refractive index n ₁ and the extinction coefficient k ₁ with respect to light having a wavelength of 254 nm of the material constituting the polarization axis rotation suppression layer is 0.2 ≦ n ₁ < 1.4 and 1.6 ≦ k ₁ ≦ 2.4, 1.4 ≦ n ₁ <2.0 and 0.2 ≦ k ₁ ≦ 2.4, 2.0 ≦ n ₁ <2.6, 0.2 ≦ k ₁ ≦ 2.2, 2.6 ≦ n ₁ <3.2, 0.2 ≦ k ₁ ≦ 1.8 The polarizer according to claim 1, wherein:

  The invention according to claim 3 of the present invention is the polarizer according to claim 1 or 2, wherein the polarization axis rotation suppression layer has a thickness of 10 nm or more.

In the invention according to claim 4 of the present invention, the range of the refractive index n ₂ and the extinction coefficient k ₂ for light having a wavelength of 254 nm of the material constituting the extinction ratio improving layer is 2.2 ≦ n ₂ ≦ 3. The polarizer according to claim 2, wherein the polarizer satisfies a range of 1.0 ≦ k ₂ ≦ 3.5.

  In the invention according to claim 5 of the present invention, the polarization axis rotation suppressing layer is made of titanium oxide, molybdenum silicide, tungsten, chromium, silicon, and oxides, nitrides, and oxynitrides thereof. The polarizer according to any one of claims 1 to 4, comprising one or two or more selected materials.

  The invention according to claim 6 of the present invention is a laminated substrate used for manufacturing the polarizer according to any one of claims 1 to 5, wherein the quenching is provided on the transparent substrate. A multilayer substrate comprising: an extinction ratio improving material layer for forming a ratio improving layer; and a polarization axis rotation suppressing material layer for forming the polarization axis rotation suppressing layer.

In the invention according to claim 7 of the present invention, the range of the refractive index n ₃ and the extinction coefficient k ₃ with respect to light having a wavelength of 254 nm of the material constituting the polarization axis rotation suppressing material layer is 0.2 ≦ n _3. <1.4 and 1.6 ≦ k ₃ ≦ 2.4, 1.4 ≦ n ₃ <2.0 and 0.2 ≦ k ₃ ≦ 2.4, 2.0 ≦ Any of n ₃ <2.6 and 0.2 ≦ k ₃ ≦ 2.2, 2.6 ≦ n ₃ <3.2 and 0.2 ≦ k ₃ ≦ 1.8 The multilayer substrate according to claim 6, wherein:

In the invention according to claim 8 of the present invention, the range of the refractive index n ₄ and the extinction coefficient k ₄ for light having a wavelength of 254 nm of the material constituting the extinction ratio improving material layer is 2.2 ≦ n ₄ ≦ The multilayer substrate according to claim 6 or 7, wherein 3.0 and 1.0 ≦ k ₄ ≦ 3.5.

  The invention according to claim 9 of the present invention is a photo-alignment device that polarizes ultraviolet light and irradiates the photo-alignment film, and the polarizer according to any one of claims 1 to 5 is used. The polarization axis rotation suppression layer is provided on the incident side of the light incident on the polarizer with respect to the extinction ratio improving layer, and irradiates the optical alignment film with the light polarized by the polarizer. It is the optical alignment apparatus characterized.

  In the invention according to claim 10 of the present invention, a mechanism for moving the photo-alignment film is provided, and the polarizer is in a direction orthogonal to the moving direction of the photo-alignment film and the moving direction of the photo-alignment film. The boundary between the plurality of polarizers adjacent in the direction orthogonal to the moving direction of the photo-alignment film is not continuously connected to the moving direction of the photo-alignment film. The optical alignment device according to claim 9, wherein the plurality of polarizers are arranged.

  According to the present invention, even when the incident angle of light incident on the polarizer is large while having a high extinction ratio with respect to short-wavelength light such as the ultraviolet region, the polarization axis of the polarized light is A polarizer capable of suppressing rotation can be provided.

  Moreover, the polarizer which concerns on this invention can be efficiently manufactured by using the laminated substrate which concerns on this invention.

  Further, in the photo-alignment apparatus provided with the polarizer according to the present invention, even if the incident angle of light incident on the polarizer increases, the polarization axis of the polarized light is suppressed from rotating, It is possible to efficiently apply an alignment regulating force to a photo-alignment film having sensitivity to short-wavelength light such as a region.

It is explanatory drawing which shows an example of the polarizer which concerns on this invention, (a) is a schematic plan view, (b) is the sectional view on the AA line of (a). It is explanatory drawing which shows the other example of the polarizer which concerns on this invention. It is explanatory drawing which shows the example of the laminated substrate which concerns on this invention. It is a schematic process drawing which shows an example of the manufacturing method of the polarizer which concerns on this invention. It is a figure which shows the structural example of the photo-alignment apparatus which concerns on this invention. It is a figure which shows the other structural example of the optical orientation apparatus which concerns on this invention. It is a figure which shows the example of the arrangement | positioning form of the polarizer in the photo-alignment apparatus which concerns on this invention. It is a figure explaining the simulation model of Example 1. FIG. 6 is a graph showing a simulation result of Example 1. FIG. 6 is a diagram illustrating a simulation model of Example 2. 10 is a graph showing a simulation result of Example 2. 10 is a graph showing a simulation result of Example 3. It is a graph which shows the evaluation result of the extinction ratio of Example 4. 10 is a graph showing the evaluation result of the amount of polarization axis rotation in Example 4.

<Polarizer>
The polarizer according to the present invention is a polarizer in which a plurality of fine wires are arranged in parallel on a transparent substrate, and the fine wires improve the extinction ratio to improve the extinction ratio of polarized light emitted from the polarizer. And a polarization axis rotation suppression layer that suppresses the rotation of the polarization axis of polarized light emitted from the polarizer, and the polarization axis rotation suppression layer is It is provided on the incident side of light incident on the polarizer.

  1A and 1B are explanatory views showing an example of a polarizer according to the present invention, in which FIG. 1A is a schematic plan view, and FIG. 1B is a cross-sectional view taken along line AA in FIG. In the example shown in FIG. 1, the light from the light source enters the polarizer 10 from the side where the thin wire 2 is formed (the Z side shown in FIG. 1B).

As illustrated in FIG. 1, the polarizer 10 has a configuration in which a plurality of thin wires 2 are arranged in parallel on a transparent substrate 1.
The thin line 2 includes an extinction ratio improving layer 3 that improves the extinction ratio of the polarized light emitted from the polarizer 10, and a polarization axis rotation suppression layer that suppresses rotation of the polarization axis of the polarized light emitted from the polarizer 10. 4 has a multilayer structure.
Here, in the thin wire 2 of the polarizer 10 illustrated in FIG. 1, the extinction ratio improving layer 3 is provided on the transparent substrate 1, and the polarization axis rotation suppressing layer 4 is provided thereon. It is configured. That is, the polarization axis rotation suppression layer 4 is provided on the incident side of the light incident on the polarizer 10 with respect to the extinction ratio improving layer 3.

  As described above, in the polarizer according to the present invention, the thin wire 2 has a multilayer structure including the extinction ratio improving layer 3 and the polarization axis rotation suppression layer 4, and the polarization axis rotation suppression layer 4 is provided on the light incident side. Is provided. Therefore, the polarization axis rotation suppression layer 4 can suppress the polarization axis of the polarized light from rotating while the extinction ratio improving layer 3 has a high extinction ratio.

FIG. 2 is an explanatory view showing another example of the polarizer according to the present invention.
In the present invention, the polarization axis rotation suppression layer 4 may be provided on the incident side of the light incident on the polarizer with respect to the extinction ratio improving layer 3.
Therefore, when a polarizer is used in a form in which light from a light source is incident from the transparent substrate 1 side, the transparent substrate is configured as a thin wire 2 as in the polarizer 11 illustrated in FIG. It is preferable that a polarization axis rotation suppression layer 4 is provided on 1 and an extinction ratio improving layer 3 is provided thereon.

Moreover, in this invention, like the polarizer 12 illustrated in FIG.2 (b), as a structure of the thin wire | line 2, the polarizing axis rotation suppression layer 4 is provided on the transparent substrate 1, On it, The extinction ratio improving layer 3 may be provided, and the polarization axis rotation suppressing layer 4 may be further provided thereon.
With such a configuration, the light from the light source enters from the side where the thin wire 2 is formed (the Z side shown in FIG. 2B), or the light from the light source enters from the transparent substrate 1 side. This is because it can be suitably used for any of the embodiments.

  Hereinafter, each structure of the polarizer which concerns on this invention is demonstrated.

(Transparent substrate)
The transparent substrate 1 is not particularly limited as long as it can stably support the thin wires 2 and has excellent light transmission from a light source. For example, optically polished synthetic quartz glass Fluorite, calcium fluoride, etc. can be used.
In the present invention, synthetic quartz glass can be preferably used. This is because the quality is stable and the transmittance is high even when light having a short wavelength is used.
As thickness of the transparent substrate 1, it can select suitably according to the use, size, etc. of the polarizer of this invention.

(Thin line)
The thin line 2 includes an extinction ratio improving layer 3 that improves the extinction ratio of the polarized light emitted from the polarizer 10 and a polarization axis rotation suppression layer 4 that suppresses the rotation of the polarization axis of the polarized light emitted from the polarizer 10. , Having a multilayer structure.

In the present invention, the polarization axis rotation suppression layer 4 may be provided on the incident side of the light incident on the polarizer with respect to the extinction ratio improving layer 3, for example, the extinction ratio improving layer 3 and the polarization axis. An intermediate layer may be provided between the rotation suppression layers 4.
An intermediate layer may be provided between the extinction ratio improving layer 3 and the transparent substrate 1. The thin wire 2 may be covered with silicon oxide or the like.

  The pitch of the thin wires 2 (P in FIG. 1) is not particularly limited as long as the desired extinction ratio and the effect of suppressing the rotation of the polarization axis can be obtained. Although it varies depending on the wavelength, for example, it can be in the range of 60 nm to 140 nm, preferably 80 nm to 120 nm, particularly 90 nm to 110 nm. preferable. It is because it can be set as the thing excellent in the extinction ratio with respect to the ultraviolet light whose wavelength is 240 to 400 nm by setting it as said range.

  The width of the thin wire 2 (W in FIG. 1) is not particularly limited as long as the desired extinction ratio and the effect of suppressing the rotation of the polarization axis can be obtained. Can do.

(Extinction ratio improving layer)
The extinction ratio improving layer 3 mainly has an effect of improving the extinction ratio of the polarized light emitted from the polarizer 10.

In the present invention, the material constituting the extinction ratio improving layer 3 can be used as long as a desired extinction ratio can be obtained. Among them, the material constituting the extinction ratio improving layer 3 has a wavelength of 254 nm. range and the refractive index n ₂ of the extinction coefficient k ₂ to light, it is preferable that satisfy 2.2 ≦ n ₂ ≦ 3.0 at a by 1.0 range ≦ k ₂ ≦ 3.5. This is because the extinction ratio can be set to a good value, for example, 50 or more.
The material satisfying the ranges of the refractive index n ₂ and the extinction coefficient k ₂ is selected from molybdenum silicide (MoSi) materials, that is, molybdenum silicide (MoSi) and its oxide, nitride, and oxynitride. And those containing one or more materials.

  If the extinction ratio improving layer 3 constituting the thin wire 2 is the above material, the ultraviolet light having a wavelength of 240 nm to 400 nm, particularly the ultraviolet light having a wavelength of 240 nm to 260 nm, and the ultraviolet light having a wavelength of 355 nm to 375 nm. In contrast, a polarizer having an excellent extinction ratio can be obtained, and the above material is used as a material constituting a mask pattern in the technical field of photomasks to form extremely fine fine lines. Because it is possible.

The thickness of the extinction ratio improving layer 3 (T _{1 in} FIG. 1) is not particularly limited as long as a desired extinction ratio can be obtained. For example, the thickness is preferably 60 nm or more. It is preferably in the range of 160 nm, particularly preferably in the range of 80 nm to 140 nm. It is because it can be set as the thing excellent in the extinction ratio, suppressing processing difficulty by being in the said range.

(Polarization axis rotation suppression layer)
The polarization axis rotation suppression layer 4 is provided on the thin wire 2 on the incident side of light incident on the polarizer, and acts to suppress the rotation of the polarization axis of the polarized light emitted from the polarizer.

In the present invention, the polarization axis rotation suppression layer 4 can be used as long as it can reduce the amount of rotation of the polarization axis of polarized light emitted from the polarizer with respect to light incident on the polarizer at various angles. In particular, the range of the refractive index n ₁ and the extinction coefficient k ₁ for light having a wavelength of 254 nm of the material constituting the polarization axis rotation suppression layer 4 is 0.2 ≦ n ₁ <1.4 and 1.6 ≦ k ₁ ≦ 2.4, 1.4 ≦ n ₁ <2.0, 0.2 ≦ k ₁ ≦ 2.4, 2.0 ≦ n ₁ <2.6, and 0.2. It is preferable that the range satisfies 2 ≦ k ₁ ≦ 2.2, 2.6 ≦ n ₁ <3.2, and satisfies 0.2 ≦ k ₁ ≦ 1.8.

If the material constituting the polarization axis rotation suppression layer 4 satisfies any _one of the ranges of the refractive index n ₁ and the extinction coefficient k ₁ , light having a short wavelength such as a wavelength of 254 nm may have various angles. This is because the rotation amount of the polarization axis of the polarized light emitted from the polarizer can be suppressed to a small range even when entering the polarizer.

In the present invention, the thickness (T _{2 in} FIG. 1) of the polarization axis rotation suppression layer 4 can be used as long as the polarization axis rotation amount of the polarized light can be reduced. Preferably there is. This is because if the thickness is 10 nm or more, rotation of the polarization axis of the polarized light can be sufficiently suppressed.

In the present invention, the material constituting the polarization axis rotation suppression layer 4 can be any material that can reduce the amount of polarization axis rotation of the polarized light. Among these, titanium oxide, molybdenum silicide, tungsten, It is preferable to include one or more materials selected from chromium, silicon, and oxides, nitrides, and oxynitrides thereof.
If the above materials, as the polarization axis rotation suppressing layer 4 constituting the thin line 2, can be processed deposition and fine, also, by the inclusion of oxygen or nitrogen, the refractive index n ₁ and the extinction coefficient This is because k ₁ can be adjusted to a desired range.

<Laminated substrate>
In order to manufacture the polarizer according to the present invention, on the transparent substrate 1, the extinction ratio improving material layer 3A for forming the extinction ratio improving layer 3 and the polarization axis for forming the polarization axis rotation suppressing layer 4 are formed. It is preferable to manufacture a polarizer in advance by manufacturing a multilayer substrate having the rotation suppressing material layer 4A in advance and forming a thin wire of a desired form using the multilayer substrate. This is because by preparing the laminated substrate in advance, it is possible to shorten the manufacturing time of the polarizer and to efficiently manufacture the polarizer according to the present invention.

For example, to manufacture the polarizer 10 illustrated in FIG. 1, as shown in FIG. 3A, the extinction ratio improving material layer 3 </ b> A and the polarization axis rotation suppressing material layer 4 </ b> A are sequentially stacked on the transparent substrate 1. It is preferable to prepare the laminated substrate 10A.
Similarly, in order to manufacture the polarizer 11 illustrated in FIG. 2A, as shown in FIG. 3B, the polarization axis rotation suppressing material layer 4 </ b> A and the extinction ratio improving material layer are formed on the transparent substrate 1. It is preferable to prepare a laminated substrate 11A in which 3A are sequentially laminated. In order to manufacture the polarizer 12 illustrated in FIG. 2B, as shown in FIG. 3C, the polarization axis rotation suppressing material layer 4A and the extinction ratio improving material layer 3A are formed on the transparent substrate 1. It is preferable to prepare a laminated substrate 12A in which the polarization axis rotation suppressing material layers 4A are sequentially laminated.

  Although not shown, a hard mask layer that acts as an etching mask for etching the extinction ratio improving material layer 3A and the polarization axis rotation suppressing material layer 4A may be provided on the surface of each laminated substrate. .

In the present invention, the range of the refractive index n ₄ and the extinction coefficient k ₄ for light having a wavelength of 254 nm of the material constituting the extinction ratio improving material layer 3A is 2.2 ≦ n ₄ ≦ 3.0 and 1.0. It is preferable to satisfy the range of ≦ k ₄ ≦ 3.5. This is because the extinction ratio of the polarizer obtained by processing the laminated substrate having the extinction ratio improving material layer 3A can be set to a good value, for example, approximately 50 or more.

The material satisfying the ranges of the refractive index n ₄ and the extinction coefficient k ₄ is selected from molybdenum silicide (MoSi) materials, that is, molybdenum silicide (MoSi) and its oxide, nitride, and oxynitride. And those containing one or more materials.

In the present invention, the range of the refractive index n ₃ and the extinction coefficient k ₃ for light having a wavelength of 254 nm of the material constituting the polarization axis rotation suppressing material layer 4A is 0.2 ≦ n ₃ <1.4. 1.6 ≦ k ₃ ≦ 2.4, 1.4 ≦ n ₃ <2.0, 0.2 ≦ k ₃ ≦ 2.4, 2.0 ≦ n ₃ <2.6 And satisfying any of the range of 0.2 ≦ k ₃ ≦ 2.2, 2.6 ≦ n ₃ <3.2, and 0.2 ≦ k ₃ ≦ 1.8. preferable. This is because the amount of rotation of the polarization axis of the polarizer obtained by processing the laminated substrate having the polarization axis rotation suppression material layer 4A can be suppressed to a small range.

  In the present invention, the material constituting the polarization axis rotation suppressing material layer 4A is selected from titanium oxide, molybdenum silicide, tungsten, chromium, silicon, and oxides, nitrides, and oxynitrides thereof. The thing containing 1 type, or 2 or more types of materials can be mentioned.

<Method for producing polarizer>
Next, the manufacturing method of the polarizer which concerns on this invention is demonstrated.

FIG. 4 is a schematic process diagram showing an example of a method for producing a polarizer according to the present invention.
For example, in order to manufacture the polarizer 10 illustrated in FIG. 1, first, as shown in FIG. 4A, the extinction ratio improving material layer for forming the extinction ratio improving layer 3 on the transparent substrate 1. 3A, a hard mask layer 5A that acts as an etching mask when etching the polarization axis rotation suppression material layer 4A, the polarization axis rotation suppression material layer 4A, and the extinction ratio improving material layer 3A for forming the polarization axis rotation suppression layer 4 Are prepared in order.

  The extinction ratio improving material layer 3A can be formed by a method such as sputtering using the same material as that constituting the extinction ratio improving layer 3. Similarly, the polarization axis rotation suppression material layer 4 </ b> A can be formed by a technique such as sputtering using the same material as the polarization axis rotation suppression layer 4.

The hard mask layer 5A is formed by a method such as sputtering using a material having different dry etching characteristics from the material constituting the extinction ratio improving layer 3 and the material constituting the polarization axis rotation suppression layer 4. can do.
For example, when a molybdenum silicide material is used as the material constituting the extinction ratio improving layer 3 or the material constituting the polarization axis rotation suppression layer 4, a chromium material is used as the material constituting the hard mask layer 5A. Can do.

Next, as shown in FIG. 4B, a resin pattern 6 is formed on the hard mask layer 5A by a technique such as a photolithography method, an imprint method, or an electron beam drawing method, and then the resin pattern 6 The hard mask layer 5A exposed from the substrate is dry-etched to form a hard mask pattern 5, and then the resin pattern 6 is removed (FIG. 4C).
For example, when a chromium-based material is used as the material constituting the hard mask layer 5A, the hard mask pattern 5 can be formed by dry etching using a mixed gas of chlorine and oxygen.

Next, as shown in FIG. 4D, using the hard mask pattern 5 as an etching mask, the polarization axis rotation suppression material layer 4A is dry-etched to form the polarization axis rotation suppression layer 4, and then, The exposed extinction ratio improving material layer 3A is dry-etched to form the extinction ratio improving layer 3, and then the hard mask pattern 5 is removed to obtain the polarizer 10 (FIG. 4E).
For example, when a molybdenum silicide-based material is used as the material constituting the extinction ratio improving layer 3 or the material constituting the polarization axis rotation suppression layer 4, the extinction ratio improving layer 3 and the polarization axis are formed by dry etching with a fluorine-based gas. The rotation suppression layer 4 can be formed.

  In addition, in the above, although the method to manufacture the polarizer 10 illustrated in FIG. 1 was demonstrated, also about the polarizer 11 illustrated in FIG. 2 (a) or the polarizer 12 illustrated in FIG. It can be produced by the same method as described above.

  For example, in order to manufacture the polarizer 11 illustrated in FIG. 2A, the polarization axis rotation suppressing material layer 4 </ b> A, the extinction ratio is formed on the transparent substrate 1 instead of the laminated substrate 10 </ b> B illustrated in FIG. A laminated substrate in which a hard mask layer 5A that acts as an etching mask when etching the improvement material layer 3A, the extinction ratio improvement material layer 3A, and the polarization axis rotation suppression material layer 4A is sequentially prepared is prepared. You can process it as you did.

  Similarly, in order to manufacture the polarizer 12 illustrated in FIG. 2B, the polarization axis rotation suppressing material layer 4 </ b> A and the quenching are formed on the transparent substrate 1 instead of the laminated substrate 10 </ b> B illustrated in FIG. A laminated substrate in which the ratio improving material layer 3A, the polarization axis rotation suppressing material layer 4A, and the hard mask layer 5A are sequentially laminated is prepared, and each layer may be processed as described above.

<Optical alignment device>
Next, the photo-alignment apparatus according to the present invention will be described.
The photo-alignment device of the present invention is a photo-alignment device that polarizes ultraviolet light and irradiates the photo-alignment film, and the polarizer according to the present invention is polarized with a polarization axis rotation suppression layer polarized with respect to the extinction ratio improving layer. It is provided so that it may become the incident side of the light which injects into a child, and the light which polarized with the polarizer is irradiated to a photo alignment film.

FIG. 5 is a diagram showing a configuration example of a photo-alignment apparatus according to the present invention.
A photo-alignment apparatus 20 shown in FIG. 5 includes a polarizer unit 21 in which the polarizer of the present invention is housed and an ultraviolet light lamp 22, and the ultraviolet light irradiated from the ultraviolet light lamp 22 is housed in the polarizer unit 21. Polarized light is applied by the polarizer, and the polarized light (polarized light 24) is applied to the photo-alignment film 25 formed on the work 26, thereby imparting alignment regulating force to the photo-alignment film 25. is there.

Here, the optical alignment apparatus 20 includes the polarizer according to the present invention described above so that the polarization axis rotation suppression layer 4 is on the incident side of the light incident on the polarizer with respect to the extinction ratio improving layer 3.
More specifically, for example, the polarizer provided in the photo-alignment device 20 is provided with the extinction ratio improving layer 3 on the transparent substrate 1 like the polarizer 10 shown in FIG. In the case of the configuration in which the axis rotation suppression layer 4 is provided, the thin wire 2 is on the ultraviolet lamp 22 side with respect to the transparent substrate 1, that is, the polarization axis rotation is suppressed with respect to the extinction ratio improving layer 3. A polarizer is disposed in the polarizer unit 21 so that the layer 4 is on the ultraviolet lamp 22 side.

  On the other hand, the polarizer provided in the optical alignment device 20 is provided with the polarization axis rotation suppression layer 4 on the transparent substrate 1 like the polarizer 11 shown in FIG. 2A, and the extinction ratio is improved thereon. In the case where the layer 3 is provided, the transparent substrate 1 is on the ultraviolet lamp 22 side with respect to the thin wire 2, that is, the polarization axis rotation suppression layer 4 is against the extinction ratio improving layer 3. A polarizer is arranged in the polarizer unit 21 so as to be on the ultraviolet lamp 22 side.

  In addition, the polarizer provided in the optical alignment apparatus 20 is provided with the polarization axis rotation suppression layer 4 on the transparent substrate 1 as in the polarizer 12 shown in FIG. When the ratio improving layer 3 is provided and the polarization axis rotation suppressing layer 4 is further provided thereon, the thin wire 2 is on the ultraviolet lamp 22 side with respect to the transparent substrate 1. The polarizer may be disposed in the polarizer unit 21, or the polarizer may be disposed in the polarizer unit 21 so that the transparent substrate 1 is on the ultraviolet light lamp 22 side with respect to the thin wire 2. .

  Further, the photo-alignment apparatus 20 is provided with a mechanism for moving the work 26 on which the photo-alignment film 25 is formed. By moving the work 26, the entire surface of the photo-alignment film 25 is irradiated with the polarized light 24. Can do. For example, in the example shown in FIG. 5, the workpiece 26 moves in the right direction in the drawing (the arrow direction in FIG. 5).

  In the example shown in FIG. 5, the work 26 is shown as a rectangular flat plate. However, in the present invention, the form of the work 26 is not particularly limited as long as it can irradiate the polarized light 24. For example, the work 26 may be in the form of a film, or may be in the form of a strip (web) so that it can be wound.

In the present invention, it is preferable that the ultraviolet lamp 22 is capable of irradiating ultraviolet light having a wavelength of 240 nm or more and 400 nm or less, and the photo-alignment film 25 applies ultraviolet light having a wavelength of 240 nm or more and 400 nm or less. It is preferable that it has sensitivity to it.
Since the photo-alignment device 20 includes the polarizer according to the present invention that has an excellent extinction ratio with respect to ultraviolet light in the above-mentioned wavelength range and has a high P-wave transmittance, it is suitable for ultraviolet light in the above-mentioned wavelength range. This is because the alignment regulating force can be efficiently applied to the photo-alignment film having sensitivity, and the productivity can be improved.

  Further, in order to efficiently irradiate the polarizer with the light from the ultraviolet light lamp 22, the photo-alignment device 20 applies ultraviolet light to the back side (the side opposite to the polarizer unit 21) or the side surface of the ultraviolet light lamp 22. It is preferable to have a reflecting mirror 23 that reflects.

  In addition, in order to efficiently apply the alignment regulating force to the large-area photo-alignment film 25, as shown in FIG. 5, a rod-shaped lamp is used as the ultraviolet lamp 22, and the moving direction of the work 26 (see FIG. It is preferable that the photo-alignment device 20 is configured so that the polarized light 24 that is a long irradiation region is irradiated in a direction orthogonal to the arrow direction in FIG.

  In this case, the polarizer unit 21 is also in a form suitable for irradiating the large-area photo-alignment film 25 with the polarized light 24, but it is difficult to produce a large-area polarizer. It is technically and economically preferable to arrange a plurality of polarizers in the polarizer unit 21.

  In addition, even if the incident angle of the light which injects into a polarizer becomes large by using a rod-shaped lamp for the ultraviolet light lamp 22, the polarizer according to the present invention rotates the polarization axis of the polarized light. Therefore, it is possible to efficiently apply the alignment regulating force to the photo-alignment film.

Moreover, the structure provided with a some ultraviolet light lamp may be sufficient as the photo-alignment apparatus based on this invention.
FIG. 6 is a diagram showing another configuration example of the photo-alignment apparatus according to the present invention.
As shown in FIG. 6, the photo-alignment device 30 includes two ultraviolet light lamps 32, and the polarizer 10 of the present invention is accommodated between each ultraviolet light lamp 32 and the work 36. A polarizer unit 31 is provided. Each ultraviolet lamp 32 is provided with a reflecting mirror 33.

  Thus, by providing a plurality of ultraviolet light lamps 32, the irradiation amount of the polarized light 34 applied to the photo-alignment film 35 formed on the workpiece 36 is increased as compared with the case where one ultraviolet light lamp 32 is provided. Can be made. Therefore, the moving speed of the workpiece 36 can be increased as compared with the case where one ultraviolet light lamp 32 is provided, and as a result, productivity can be improved.

  In addition, in the example shown in FIG. 6, although the structure which has arrange | positioned the two ultraviolet light lamps 32 in parallel in the moving direction (arrow direction in FIG. 6) of the workpiece | work 36 is shown, this invention is not limited to this, For example, The plurality of ultraviolet light lamps may be arranged in a direction orthogonal to the moving direction of the work 36, and a plurality of ultraviolet light lamps may be provided in both the moving direction of the work 36 and the direction orthogonal thereto. It may be a configuration in which is arranged.

  Further, in the example shown in FIG. 6, a configuration in which one polarizer unit 31 is provided for one ultraviolet lamp 32 is shown. The configuration may be such that one polarizer unit is provided for each ultraviolet lamp. In this case, it is sufficient that one polarizer unit has a size that can include irradiation regions of a plurality of ultraviolet lamps.

  FIG. 7 is a diagram showing an example of the arrangement of polarizers in the photo-alignment apparatus according to the present invention. The polarizers shown in FIGS. 7A to 7D are all arranged in a plane in which the plate-like polarizers 10 are opposed to the film surface of the photo-alignment film. Yes.

  For example, in the photo-alignment apparatus 20 shown in FIG. 5, when the band-shaped polarized light 24 is irradiated in a direction orthogonal to the moving direction of the workpiece 26, the polarizer unit 21 has the configuration shown in FIG. Thus, it is efficient to arrange a plurality of polarizers 10 in a direction orthogonal to the moving direction (arrow direction) of the workpiece 26. This is because the number of polarizers 10 can be reduced.

  On the other hand, when the area of the polarizer 10 is small, or when the photo-alignment apparatus includes a plurality of ultraviolet lamps, as shown in FIG. 7B, it is orthogonal to the moving direction (arrow direction) of the workpiece. In addition to the direction to perform, it is preferable to arrange a plurality of polarizers 10 in the direction along the moving direction (arrow direction). This is because the light from the ultraviolet lamp can be irradiated to the photo-alignment film without waste, and the productivity can be improved.

Here, in the present invention, as shown in FIGS. 7 (c) and 7 (d), a plurality of polarizers are arranged so that they are not aligned in a line along the workpiece movement direction (arrow direction). It is preferable that the positions of the adjacent polarizers are shifted and arranged in a direction (vertical direction in the drawing) orthogonal to the moving direction of the workpiece.
In other words, in the present invention, a plurality of boundary portions between a plurality of polarizers adjacent in the direction orthogonal to the moving direction of the photo-alignment film are not continuously connected to the moving direction of the photo-alignment film. It is preferable that a polarizer is disposed.
This is because polarized light usually does not occur at the boundary between the polarizers, and this prevents the boundary from adversely affecting the photo-alignment film.

Here, in the arrangement form shown in FIG. 7C, the plurality of arranged polarizers all have the same shape and the same size, and the positions of the polarizers adjacent in the left-right direction are polarized. In this arrangement, the child is shifted in the vertical direction in steps of 1/2 the size of the child in the vertical direction.
Further, in the arrangement form shown in FIG. 7D, the plurality of arranged polarizers all have the same shape and the same size, and the positions in the vertical direction of the polarizers adjacent in the left-right direction are the polarizers. In this arrangement, the vertical shift is performed in steps smaller than ½ of the vertical size.

The above will be described in more detail.
In the arrangement shown in FIG. 7C, the boundary 41 between the polarizer 10a and the polarizer 10b arranged adjacent to each other in the vertical direction extends in the horizontal direction by the polarizer 10c and the polarizer 10d arranged in the horizontal direction. It is blocked from going.
That is, in the arrangement form shown in FIG. 7C, it is prevented that the boundary portion between the polarizers adjacently arranged in the vertical direction is continuously connected in the horizontal direction.
Therefore, when the arrangement shown in FIG. 7C is adopted and the photo-alignment film is irradiated with polarized light, the adverse effect caused by the boundary between the polarizers continuously affects the photo-alignment film. Can be suppressed.

Similarly, also in the arrangement form shown in FIG. 7D, it is prevented that the boundary portion between the polarizers adjacently arranged in the vertical direction is continuously connected in the horizontal direction.
Therefore, when the arrangement shown in FIG. 7 (d) is adopted to irradiate the photo-alignment film with polarized light, the adverse effect caused by the boundary between the polarizers continuously affects the photo-alignment film. Can be suppressed.

In the arrangement shown in FIG. 7 (c), since the vertical shift is performed in steps of 1/2 the size of the polarizer in the vertical direction, the horizontal direction (workpiece movement direction). On the other hand, the vertical position of the boundary portion 41 is aligned for every two polarizers.
On the other hand, in the arrangement form shown in FIG. 7D, the vertical position of the boundary portion 42 is shifted in the vertical direction by a step smaller than ½ of the vertical size of the polarizer. It becomes harder to align.
Therefore, in the arrangement form shown in FIG. 7 (d), it is possible to further suppress the adverse effects caused by the boundary portion between the polarizers from continuously exerting on the photo-alignment film.

  In the example shown in FIGS. 7A to 7D, the individual polarizers are arranged so that the side surfaces thereof are in contact with each other. However, the present invention is not limited to this mode, and adjacent polarized light beams are used. The form which the clearance gap between children has a clearance gap may be sufficient.

  Moreover, it is good also as a form by which the clearance gap does not arise in the boundary part between polarizers by overlapping the edge part of adjacent polarizers mutually.

  As mentioned above, although each embodiment was described about the polarizer which concerns on this invention, a laminated substrate, and a photo-alignment apparatus, this invention is not limited to the said embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention and exhibits the same function and effect regardless of the case. Are included in the technical scope.

  The present invention will be described more specifically with reference to the following examples.

[Example 1]
In the case where light having a wavelength of 254 nm is incident on the polarizer 13 shown in FIG. 8 at an azimuth angle of 45 degrees and an incident angle of 60 degrees from the side where the thin line is formed, “Numerical analysis of diffractive optical element and its application” ( A simulation model based on RCWA (Regorous Coupled Wave Analysis) described by Maruzen Publishing Co., Ltd. (supervised by Kyoko Komine) was created, and the refractive index n ₁ and extinction coefficient k _{1 of} the material constituting the polarization axis rotation suppression layer 4 and polarization The relationship of the rotation amount of the polarization axis of the polarized light emitted from the child 13 was calculated. The results are shown in Table 1 and FIG.

In the simulation model of Example 1, the thin line of the polarizer 13 shown in FIG. 8 has a single-layer structure including only the polarization axis rotation suppression layer 4 in order to facilitate calculation. The polarization axis rotation suppression layer 4 of the polarizer 13 has a thickness of 100 nm, a width of 33 nm, and a pitch of 100 nm.
The rotation amount of the polarization axis indicates the rotation amount (rotation angle) from this direction with reference to the direction of the polarization axis when the incident angle of incident light is 0 degree.

In the graph shown in FIG. 9, the range of the refractive index n ₁ and the extinction coefficient k ₁ in which the rotation amount of the polarization axis is −3.0 degrees to +3.0 degrees is represented as a white region. The black line passing through the approximate center of the white area indicates the refractive index n ₁ and the extinction coefficient k _{1 at} which the rotation amount of the polarization axis is 0 degree.
On the other hand, the range of the refractive index n ₁ and the extinction coefficient k ₁ where the rotation amount of the polarization axis is −6.0 degrees to −3.0 degrees, and the rotation amount of the polarization axis is +3.0 degrees to +6.0 degrees. The range of the refractive index n ₁ and the extinction coefficient k ₁ that are degrees is represented as a gray region in the graph shown in FIG.
Further, the range of the refractive index n ₁ and the extinction coefficient k ₁ where the rotation amount of the polarization axis is larger is represented as a black region in the graph shown in FIG.

As shown in Table 1 and FIG. 9, the incident angle of light incident on the polarizer can be changed by appropriately selecting the ranges of the refractive index n ₁ and the extinction coefficient k ₁ of the material constituting the polarization axis rotation suppression layer 4. It was confirmed that the rotation of the polarization axis of the polarized light can be suppressed even when it becomes larger.

For example, the range of the refractive index n ₁ and the extinction coefficient k ₁ is 0.2 ≦ n ₁ <1.4, the range of 1.6 ≦ k ₁ ≦ 2.4, and 1.4 ≦ n ₁ <2 0.0 and a range of 0.2 ≦ k ₁ ≦ 2.4, 2.0 ≦ n ₁ <2.6 and a range of 0.2 ≦ k ₁ ≦ 2.2, 2.6 ≦ n ₁ If it is <3.2 and satisfies any of the ranges of 0.2 ≦ k ₁ ≦ 1.8, light having a wavelength of 254 nm enters the polarizer 13 with an incident angle as large as an incident angle of 60 degrees. Even in this case, the amount of rotation of the polarization axis of the polarized light emitted from the polarizer 13 can be suppressed within approximately ± 3 degrees.

[Example 2]
Next, with respect to the case where light having a wavelength of 254 nm is incident on the polarizer 14 shown in FIG. 10 at an azimuth angle of 0 ° and an incident angle of 0 ° from the side where the thin line is formed, “Numerical analysis of diffractive optical element and its A simulation model based on RCWA (Regorous Coupled Wave Analysis) described in “Applications” (supervised by Kyoko Kobuchi), and the refractive index n ₂ and extinction coefficient k _{2 of} the material constituting the extinction ratio improving layer, The extinction ratio relationship was calculated. The results are shown in Table 2 and FIG.

  In the simulation model of Example 2, the thin line of the polarizer 14 shown in FIG. 10 has a single-layer structure including only the extinction ratio improving layer 3 in order to facilitate calculation. The thickness of the extinction ratio improving layer 3 of the polarizer 14 was 100 nm, the width was 33 nm, and the pitch was 100 nm.

When a molybdenum silicide (MoSi) -based material is used as the material constituting the extinction ratio improving layer 3 as described above, the refractive index n ₂ and the extinction coefficient k can be adjusted by adjusting the composition or the content of oxygen or nitrogen. The range of ₂ may be 2.2 ≦ n ₂ ≦ 3.0 and 0.7 ≦ k ₂ ≦ 3.5.
Among these, a preferable range is a range where the refractive index n ₂ is 2.2 ≦ n ₂ ≦ 3.0 and the extinction coefficient k ₂ is 1.0 ≦ k ₂ ≦ 3.5. This is because the extinction ratio is approximately 50 or more.
Furthermore, when the refractive index n ₂ is 2.4 ≦ n ₂ ≦ 3.0 and the extinction coefficient k ₂ is in the range of 1.4 ≦ k ₂ ≦ 3.5, the extinction ratio becomes higher and the extinction ratio becomes higher. Preferred as a ratio improving layer.

[Example 3]
In the case where light having a wavelength of 254 nm is incident on the polarizer 10 shown in FIG. 1 at an azimuth angle of 45 degrees and an incident angle of 60 degrees from the side where the thin wire 2 is formed, “Numerical analysis of diffractive optical element and its application” A simulation model based on RCWA (Regorous Coupled Wave Analysis) described by Maruzen Publishing Co., Ltd. (supervised by Kyoko Ogura) is created, and the thickness of the polarization axis rotation suppression layer 4 and the rotation of the polarization axis of the polarized light emitted from the polarizer 10 are created. The quantity relationship was calculated. The results are shown in Table 3 and FIG.

In the simulation model of Example 3, the pitch (P) of the thin wire 2 of the polarizer 10 shown in FIG. 1 is 100 nm, and the thickness (T ₁ ) of the extinction ratio improving layer 3 constituting the thin wire 2 is 80 nm. The thickness (T ₂ ) of the polarization axis rotation suppressing layer 4 constituting the thin wire 2 was set to four types of 0 nm, 10 nm, 20 nm, and 30 nm.
In addition, the width (W) of the thin wire 2 was changed according to each thickness of the polarization axis rotation suppression layer 4 so that the P wave transmittance of the polarizer 10 was 70%.

The refractive index n ₂ in the light of the wavelength 254nm of the material constituting the extinction ratio improving layer 3 was set to 2.37, extinction coefficient k ₂ was 3.26.
In addition, the refractive index n ₁ of the light constituting the polarization axis rotation suppression layer 4 with a wavelength of 254 nm was 2.65, and the extinction coefficient k ₁ was 1.23.

As shown in Table 3 and FIG. 12, when the thickness of the polarization axis rotation suppression layer 4 is set to 0 nm, that is, the thin wire 2 does not have the polarization axis rotation suppression layer 4 and consists of only the extinction ratio improving layer 3. In the case of a single layer structure, the amount of rotation of the polarization axis of the polarized light emitted from the polarizer 10 is a large value of 6.81 degrees.
On the other hand, if the thickness of the polarization axis rotation suppression layer 4 is 10 nm or more, even if light having a wavelength of 254 nm is incident on the polarizer at an incident angle as large as an incident angle of 60 degrees, It was confirmed that the rotation amount of the polarization axis can be suppressed to 3 degrees or less.

  Further, as shown in Table 3, the extinction ratio does not decrease even when the polarization axis rotation suppression layer 4 is provided, and the multilayered thin wire 2 having the extinction ratio improvement layer 3 and the polarization axis rotation suppression layer 4 has a wavelength of 254 nm. It was confirmed to have a high extinction ratio even for such short-wavelength light.

  That is, the polarizer according to the present invention has a high extinction ratio with respect to short-wavelength light such as the ultraviolet region, and can suppress rotation of the polarization axis of polarized light. confirmed.

[Example 4]
(Manufacture of polarizers)
As in the laminated substrate 10B shown in FIG. 4A, a laminated substrate was prepared in which an extinction ratio improving material layer, a polarization axis rotation suppressing material layer, and a hard mask layer were sequentially laminated on a transparent substrate.
Here, a synthetic quartz glass with a film thickness of 6.35 mm is used as the transparent substrate, and the extinction ratio improving material layer has a refractive index n ₄ of 2.70 with respect to light having a wavelength of 254 nm and an extinction coefficient k ₄ of 1.93. Molybdenum silicide with a refractive index n ₃ of 2.65 and an extinction coefficient k ₃ of 1.23 with respect to light having a wavelength of 254 nm is used for the polarization axis rotation suppressing material layer. A system material film (film thickness 30 nm) was used, and a chromium material film was used for the hard mask layer.
Next, an electron beam resist was applied and formed on the hard mask layer, and electron beam drawing and development processing were performed to form a resin pattern having a line and space pattern with a pitch of 100 nm.
Next, the hard mask layer exposed from the resin pattern was dry-etched with a mixed gas of chlorine and oxygen to form a hard mask pattern, and then the resin pattern was removed by ashing with oxygen gas.
Next, SF ₆ is used as an etching gas, and the polarization axis rotation suppressing material layer and the extinction ratio improving material layer are dry-etched using the hard mask pattern as an etching mask, and then the hard mask pattern is removed to remove the polarization of Example 4 I got a child.

  The width, thickness, and pitch of the thin wires of the polarizer of Example 4 were measured by a STEM measuring device LWM9000 manufactured by Vistec and an AFM device DIMENSION-X3D manufactured by VEECO, respectively, and were 35 nm, 159 nm, and 100 nm, respectively.

(Structural evaluation of thin wires)
The structure of the fine wire of the polarizer of Example 4 was evaluated by a transmission ellipsometer (VUV-VASE manufactured by Woollam).
As a result, it was confirmed that an oxide film made of silicon oxide was formed on the upper and side surfaces of the thin wire.
More specifically, in the thin line of the polarizer of Example 4, the width and thickness of the polarization axis rotation suppression layer are 17 nm and 30 nm, respectively, and the width and thickness of the extinction ratio improving layer are 17 nm and 120 nm, respectively. The side surfaces of the polarization axis rotation suppression layer and the extinction ratio improving layer have an oxide film made of silicon oxide having a thickness of 9 nm, and the upper surface of the polarization axis rotation suppression layer is made of silicon oxide having a thickness of 9 nm. It was confirmed that the structure had an oxide film.

(Evaluation of extinction ratio)
For the polarizer of Example 4, the transmission ellipsometer (VUV-VASE manufactured by Woollam Co., Ltd.) was used to transmit the P wave transmittance of ultraviolet light within the wavelength range of 200 nm to 400 nm (P wave component in the emitted light / P in the incident light). Wave component) and S wave transmittance (S wave component in outgoing light / S wave component in incident light) were measured, and the extinction ratio was calculated. The results are shown in Table 4 and FIG.
As shown in Table 4 and FIG. 13, the polarizer of Example 4 had an extinction ratio of 50 or more in the wavelength range of 200 nm to 360 nm.

(Evaluation of polarization axis rotation)
For the polarizer of Example 4, light having a wavelength of 254 nm is incident at an azimuth angle of 45 degrees and an incident angle of 0 to 60 degrees from the side on which the thin line is formed, using a transmission ellipsometer (VUV-VASE manufactured by Woollam). The amount of rotation of the polarization axis of the polarized light was measured. The results are shown in Table 5 and FIG.
As shown in Table 5 and FIG. 14, in the polarizer of Example 4, the amount of rotation of the polarization axis of the polarized light is ± 1.v with respect to incident light having an azimuth angle of 45 degrees and an incident angle of 0 degrees to 60 degrees. It was confirmed that it can be suppressed within 4 degrees.

DESCRIPTION OF SYMBOLS 1 Transparent substrate 2 Thin wire 3 Extinction ratio improvement layer 3A Extinction ratio improvement material layer 4 Polarization axis rotation suppression layer 4A Polarization axis rotation suppression material layer 5 Hard mask pattern 5A Hard mask layer 6 Resin pattern 10, 11, 12, 13, 14 Polarization Child 10A, 10B, 11A, 12A Laminated substrate 20, 30 Optical alignment device 21, 31 Polarizer unit 22, 32 Ultraviolet lamp 23, 33 Reflector 24, 34 Polarized light 25, 35 Photo alignment film 26, 36 Work 41, 42 border

Claims (6)

A polarizer in which a plurality of thin wires are arranged in parallel on a transparent substrate,
The fine line is
The range of refractive index n ₁ and extinction coefficient k ₁ for light of wavelength 254 nm is
0.2 ≦ n ₁ <1.4 and 1.6 ≦ k ₁ ≦ 2.4,
1.4 ≦ n ₁ <2.0 and 0.2 ≦ k ₁ ≦ 2.4,
2.0 ≦ n ₁ <2.6 and 0.2 ≦ k ₁ ≦ 2.2,
2.6 ≦ n ₁ <3.2 and 0.2 ≦ k ₁ ≦ 1.8,
A first layer made of a material that satisfies any of the following:
The range of refractive index n ₂ and extinction coefficient k ₂ for light with a wavelength of 254 nm is
A second layer made of a material satisfying a range of 2.2 ≦ n ₂ ≦ 3.0 and 1.0 ≦ k ₂ ≦ 3.5;
Have
The first layer and the second layer are different from each other in at least one of a refractive index and an extinction coefficient,
The first layer includes molybdenum silicide, or one or more materials selected from tungsten, chromium, silicon, and oxides, nitrides, and oxynitrides thereof;
The second layer includes one or more materials selected from molybdenum silicide and its oxide, nitride, oxynitride,
The polarizer, wherein the first layer is provided on an incident side of light incident on the polarizer with respect to the second layer.   The polarizer according to claim 1, wherein the first layer has a thickness of 10 nm or more. 3. The polarizer according to claim 1, wherein an oxide film made of silicon oxide is formed on an upper surface and a side surface of the thin wire . It is a laminated substrate used for manufacture of a light polarizer according to any one of claims 1 to 3,
On the transparent substrate,
The range of refractive index n ₃ and extinction coefficient k ₃ for light with a wavelength of 254 nm is
0.2 ≦ n ₃ <1.4 and 1.6 ≦ k ₃ ≦ 2.4,
1.4 ≦ n ₃ <2.0 and 0.2 ≦ k ₃ ≦ 2.4,
2.0 ≦ n ₃ <2.6 and 0.2 ≦ k ₃ ≦ 2.2,
2.6 ≦ n ₃ <3.2 and 0.2 ≦ k ₃ ≦ 1.8,
A first material layer composed of a material satisfying any one of
The range of refractive index n ₄ and extinction coefficient k ₄ for light of wavelength 254 nm is
2.2 ≦ n ₄ ≦ 3.0 and 1.0 ≦ k ₄ ≦ 3.5
A second material layer composed of a material satisfying
Have
The first material layer and the second material layer are different from each other in at least one of a refractive index and an extinction coefficient.
The first material layer includes one or more materials selected from molybdenum silicide and its oxide, nitride, and oxynitride,
The multilayer substrate, wherein the second material layer includes one or more materials selected from molybdenum silicide and its oxide, nitride, and oxynitride . A photo-alignment device that polarizes ultraviolet light and irradiates the photo-alignment film,
The polarizer according to any one of claims 1 to 3 is provided so that the first layer is on an incident side of light incident on the polarizer with respect to the second layer,
A photo-alignment apparatus that irradiates the photo-alignment film with light polarized by the polarizer . A mechanism for moving the photo-alignment film is provided;
A plurality of the polarizers are provided in both the direction of movement of the photo-alignment film and the direction orthogonal to the direction of movement of the photo-alignment film;
The plurality of polarizers are arranged so that boundaries between the plurality of polarizers adjacent in the direction orthogonal to the moving direction of the photo-alignment film are not continuously connected to the moving direction of the photo-alignment film. The photo-alignment apparatus according to claim 5, wherein