TWI625559B - Polarizer, substrate for polarizer, and photo alignment device - Google Patents

Abstract

The main object of the present invention is to provide a polarizer that can easily provide an alignment restriction force to a light alignment film.

The present invention achieves the above object by providing a polarizer, which is characterized by having a plurality of thin lines arranged in a straight line in parallel, the thin lines having a polarizing material layer containing a polarizing material and extinction of light having a wavelength of 250 nm. The ratio is 40 or more.

Description

Polarizer, substrate for polarizer, and light alignment device

The present invention relates to a polarizer that can easily provide an alignment restricting force to a light alignment film.

A liquid crystal display device generally has a structure in which a counter substrate on which a driving element is formed and a color filter are arranged to face each other, the periphery is sealed, and a gap is filled with a liquid crystal material. In addition, the liquid crystal material has a refractive index anisotropy, and the pixels can be switched on and off and display pixels according to a difference between a state in which the liquid crystal material is neatly arranged along a direction of a voltage applied to the liquid crystal material and a state in which no voltage is applied. Here, an alignment film is provided on the substrate holding the liquid crystal material to align the liquid crystal material.

In addition, an alignment film is also used as a material for a retardation film for a liquid crystal display device or a retardation film for 3D display.

As the alignment film, for example, it is known to use a polymer material typified by polyimide, and it has an alignment restricting force by performing a rubbing treatment to rub the polymer material with a cloth or the like.

However, in such an alignment film to which an alignment regulating force is imparted by a rubbing treatment, there is a problem that cloth or the like remains as a foreign substance.

On the other hand, if it is an alignment film that expresses an alignment restriction force by irradiating linearly polarized light, that is, an optical alignment film, it can be provided without performing a rubbing treatment using cloth or the like as described above. Due to the pre-alignment restricting force, there is no problem that cloth or the like remains as a foreign substance, so this alignment film has attracted attention in recent years.

As a method of irradiating linearly polarized light for imparting an alignment restricting force to such a light alignment film, a method of exposing through a polarizer is generally used. As the polarizer, one having a plurality of thin lines arranged in parallel is used, and aluminum or titanium oxide is used as a material constituting the thin lines (Patent Document 1 and the like).

[Prior technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 4968165

However, in polarizers with thin lines such as those mentioned above, in the case of short-wavelength light such as in the ultraviolet region, the ratio of extinction ratio (P-wave transmittance / S-wave transmittance) is low, and it is not possible to efficiently compare The problem that the optical alignment film imparts an alignment restricting force; the extinction ratio is the transmittance of the polarized light component (P wave) passing through the thin line perpendicular to the thin line (P wave component in outgoing light / P in incident light) The wave component, hereinafter sometimes referred to as the P-wave transmittance, is the transmittance (the S-wave component in the outgoing light / the S-wave component in the incident light) relative to the polarization component (S wave) parallel to the thin line, below, (Sometimes referred to as S-wave transmittance).

The present invention has been made in view of the above-mentioned actual circumstances, and a main object thereof is to provide a polarizer that easily imparts an alignment restricting force to a light alignment film.

The present inventors have repeatedly studied in order to solve the above problems, and found that the refractive index and the extinction coefficient of the material constituting the thin wire are favorable for the extinction ratio, and furthermore, When a material having a refractive index and an extinction coefficient in a predetermined range is used, the extinction ratio can be excellent even in the case of light having a short wavelength, and the present invention has been completed.

That is, the present invention provides a polarizer having a plurality of thin lines arranged in parallel in a straight line, the thin lines having a polarizing material layer containing a polarizing material, and an extinction ratio of light having a wavelength of 250 nm of 40 or more.

According to the present invention, since the extinction ratio of short-wavelength light is excellent, for example, it is possible to easily provide an alignment restricting force to a light alignment film.

In the present invention, it is preferred that the above-mentioned polarizer is used to impart an alignment restriction force to the light alignment film, and is used to generate linearly polarized light having a wavelength in the ultraviolet region.

The reason is that the short-wavelength light extinction ratio of the present invention can be used more effectively.

In the present invention, preferably, the refractive index of the polarizing material is in a range of 2.0 to 3.2, and the extinction coefficient is in a range of 2.7 to 3.5. The reason is that it is easy to set the extinction ratio as described above. The reason is that, since the refractive index and the extinction coefficient are within the above range, both the extinction ratio and the P-wave transmittance can be excellent in a wide range of wavelengths.

In the present invention, preferably, the refractive index of the polarizing material is within a range of 2.3 to 2.8, and the extinction coefficient of the polarizing material is within a range of 1.4 to 2.4. The reason is that, because the refractive index and the extinction coefficient are within the above-mentioned range, for light incident on the polarizer at various angles, the amount of rotation of the polarization axis of the polarized light emitted from the polarizer can be made small, and further, Makes the extinction ratio excellent.

In the present invention, preferably, the polarizing material is a molybdenum silicide-based material. The reason is that it is easy to set the extinction ratio as described above.

In the present invention, the film thickness of the polarizing material layer is preferably 40 nm. As mentioned above, the distance between the said polarizing materials is 150 nm or less. The reason is that it is easy to set the extinction ratio as described above.

The present invention provides a substrate for a polarizer, comprising: a transparent substrate; and a polarizing material film formed on the transparent substrate and containing a polarizing material; and a refractive index of the polarizing material film is in a range of 2.0 to 3.2. Within, the extinction coefficient is in the range of 2.7 ~ 3.5.

In addition, the present invention provides a substrate for a polarizer, comprising: a transparent substrate; and a polarizing material film formed on the transparent substrate and containing a polarizing material; and the refractive index of the polarizing material film is between 2.3 and 2.8. Within this range, the extinction coefficient is in the range of 1.4 to 2.4.

According to the present invention, by having the above-mentioned polarizing material film, a polarizing plate having an excellent extinction ratio can be easily formed.

In the present invention, preferably, the polarizing material is a molybdenum silicide-based material. The reason is that, by using the above-mentioned material, it is more suitable for forming a polarizer having an excellent extinction ratio.

The present invention provides a light alignment device that polarizes ultraviolet light and irradiates the light alignment film, and is characterized in that it includes the polarizer and irradiates light polarized by the polarizer to the light alignment film.

According to the present invention, by using the above-mentioned polarizer, an alignment restricting force can be easily given to a light alignment film.

In the present invention, it is preferable to include a mechanism for moving the light alignment film, and to include a plurality of the polarizers in two directions of a movement direction of the light alignment film and a direction orthogonal to the movement direction of the light alignment film. And the plurality of polarizers are arranged at a boundary portion between the plurality of polarizers adjacent to the direction orthogonal to the moving direction of the light alignment film, and are arranged in a discontinuous manner in the moving direction of the light alignment film. Polarizer. The reason for this is that it is possible to make it possible to suppress the adverse influence of the junction on the light alignment film.

In the present invention, it is possible to provide an effect that a polarizer capable of easily providing an alignment restricting force to a light alignment film can be provided.

1‧‧‧ transparent substrate

2‧‧‧ thin line

3‧‧‧ polarizing material layer

3'‧‧‧ polarizing material film

4‧‧‧ Non-polarizing material layer

10, 10a, 10b, 10c, 10d‧‧‧ polarizers

11‧‧‧patterned photoresist

20, 30‧‧‧light alignment device

21, 31‧‧‧ polarizer unit

22, 32‧‧‧ UV light

23, 33‧‧‧Reflector

24, 34‧‧‧polarized light

25, 35‧‧‧light alignment film

26, 36‧‧‧ Workpieces

41, 42‧‧‧ Junction

a‧‧‧thickness

b‧‧‧ length

c‧‧‧Width

d‧‧‧thickness

FIG. 1 is a schematic plan view showing an example of a polarizer of the present invention.

Fig. 2 is a sectional view taken along the line A-A in Fig. 1.

3 (a) to (d) are step diagrams showing an example of a method for manufacturing a polarizer of the present invention.

FIG. 4 is a diagram showing a configuration example of a light alignment device of the present invention.

FIG. 5 is a diagram showing another configuration example of the light alignment device of the present invention.

6 (a) to (d) are diagrams showing an example of an arrangement form of polarizers in a light alignment device of the present invention.

FIG. 7 is a graph showing the measurement results of the polarization characteristics of the polarizer of Example 8. FIG.

8 (a) and 8 (b) are explanatory diagrams illustrating a simulation model of the ninth embodiment.

FIG. 9 is a graph showing a simulation result of Example 9. FIG.

Fig. 10 is an explanatory diagram illustrating a simulation model of the tenth embodiment.

FIG. 11 is a graph showing a simulation result of Example 10. FIG.

FIG. 12 is a graph showing simulation results of Examples 11 to 13. FIG.

FIG. 13 is a graph showing the measurement results of the polarization characteristics of the polarizer of Example 14. FIG.

The present invention relates to a polarizer.

Hereinafter, the polarizer of the present invention will be described.

The polarizer of the present invention is characterized in that: A plurality of thin lines having a polarizing material layer containing a polarizing material, and the extinction ratio of light having a wavelength of 250 nm is 40 or more.

This type of polarizer of the present invention will be described with reference to the drawings. FIG. 1 is a schematic plan view showing an example of a polarizer of the present invention, and FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1. As shown in FIGS. 1 and 2, the polarizer 10 of the present invention has a plurality of thin lines 2 arranged in a straight line, and the thin lines 2 have a molybdenum silicide-based material layer containing a molybdenum silicide-based material as the polarizing material layer 3, and The extinction ratio of light with a wavelength of 250 nm is 40 or more.

Furthermore, in this example, the thin wire 2 has a silicon oxide layer 4 formed on the molybdenum silicide-based material layer as the polarizing material layer 3 and containing silicon oxide, and the thin wire 2 is formed of a synthetic quartz glass. On the transparent substrate 1.

According to the present invention, since the short-wavelength light has an excellent extinction ratio, it is possible to easily impart an alignment restricting force to the light alignment film. In particular, short-wavelength light such as the wavelength in the ultraviolet region has an excellent extinction ratio, so that sufficient alignment limiting force can be given in a short period of time, thereby enabling excellent production efficiency.

The polarizer of the present invention has fine lines.

Hereinafter, each structure of the polarizer of this invention is demonstrated in detail.

Thin line

The thin wires in the present invention are formed in a straight line, are arranged in parallel, and have a polarizing material layer.

(1) Polarizing material layer

The polarizing material layer contains a polarizing material.

As such a polarizing material, as long as the required extinction ratio can be obtained, It is not particularly limited, and it may vary depending on the shape of the film thickness of the polarizing material layer described above, but it may be selected, for example, from those that satisfy a predetermined refractive index and extinction coefficient.

In addition, in the present invention, the refractive index and extinction coefficient are values at a wavelength of 250 nm in a specific case where the wavelength is not specifically mentioned.

As the values of the refractive index and the extinction coefficient of the polarizing material, it is preferable that the refractive index is in a range of 2.0 to 3.2, and the extinction coefficient is in a range of 2.7 to 3.5. The reason is that the extinction ratio can be made excellent. Among them, it is preferable that the refractive index is in the range of 2.0 to 2.8, and the extinction coefficient is in the range of 2.9 to 3.5. It is particularly preferable that the refractive index is in the range of 2.0 to 2.6, and the extinction coefficient is in the range of 3.1 to 3.5. Within range. The reason for this is that both the extinction ratio and the P-wave transmittance can be excellent in a wide range of wavelengths, that is, a wavelength range of 200 to 400 nm in the ultraviolet region. The reason for this is that the extinction ratio and transmittance can be excellent especially in the wavelength range of 250 nm to 370 nm.

From the viewpoint of making the polarization axis rotation of the polarized light small, the refractive index and extinction coefficient are preferably within the range of 2.3 to 2.8, and the extinction coefficient is within the range of 1.4 to 2.4. Inside. Among them, the refractive index is preferably in the range of 2.3 to 2.8, and the extinction coefficient is in the range of 1.7 to 2.2, and the most preferable is that the refractive index is in the range of 2.4 to 2.8, and the extinction coefficient is in the range of 1.8 to 2.1. Within range. The reason is that the extinction ratio can be made to be a good value and the amount of rotation of the polarization axis can be made small.

The reason is that the extinction ratio and transmittance can be made excellent in a range of a wavelength range of 240 nm to 280 nm, and the amount of polarization axis rotation of the polarized light can be made small.

The method for measuring the refractive index and the extinction coefficient is not particularly limited, and examples thereof include a method of calculating from a spectral reflection spectrum, a method of measuring using an ellipsometer, and an Abbe method. Examples of the ellipsometer include UVSEL manufactured by Jobin Yvon. In addition, the refractive index in this case is a value measured by VUV-VASE manufactured by Woollam.

As a polarizing material satisfying such a refractive index and an extinction coefficient, specifically, a molybdenum silicide-based material (hereinafter, sometimes referred to as a MoSi-based material) containing molybdenum (Mo) and silicon (Si), or a nitride-based material may be mentioned. Of these, a molybdenum silicide material is preferable. The reason is that it is easy to adjust the values of the refractive index and the extinction coefficient according to the contents of elements such as Mo and Si, nitrogen, and oxygen contained in the molybdenum silicide-based material, and it is easy to satisfy the above-mentioned refractive index and extinction coefficient at the wavelength of the ultraviolet region. The reason is that it also has light resistance to short wavelengths in the ultraviolet region, and is suitable for alignment of light alignment films for liquid crystal display devices.

The reason is that by using a molybdenum silicide-based material, it is possible to maintain a high extinction ratio in a design where the thickness of the thin wire is thin, and the processing precision is also excellent, and further finer wire and narrower pitch can be achieved.

Furthermore, the reason is that compared with the aluminum material known as a conventional polarizing material, it has excellent resistance to acids and alkalis, can be used repeatedly after washing, and is suitable for alignment of light alignment films for liquid crystal display devices. use.

The molybdenum silicide-based material is not particularly limited as long as it includes molybdenum (Mo) and silicon (Si) and can satisfy a refractive index and an extinction coefficient capable of obtaining a desired extinction ratio, and examples thereof include molybdenum silicide ( MoSi), molybdenum silicide (MoSiO), molybdenum silicide nitride (MoSiN), molybdenum silicide oxynitride (MoSiON), and the like. The reason for this is that by using the above-mentioned material, the extinction ratio can be excellent.

The said polarizing material is contained as a main raw material of a polarizing material layer.

Here, the term "containing as a main raw material" specifically means that the content of the polarizing material in the above-mentioned polarizing material layer is 70% by mass or more, and in the present invention, it is preferably 90% by mass or more, particularly preferably 100%. % By mass, that is, the polarizing material layer is composed of the polarizing material. The reason for this is that the above-mentioned extinction ratio can be easily set to the content.

In addition, as the method for measuring the content, any content that can accurately measure the content is used. The method is not particularly limited, and examples thereof include a method of performing X-ray Photoelectron Spectroscopy (XPS) surface analysis on the cross section of the thin line.

The type of the polarizing material included in the polarizing material layer may be one composed of only one type or a combination of two or more types. In the case where two or more types of polarizing materials are used, the polarizing material layer may be a single layer or may include a plurality of layers, and the plurality of layers is a combination of layers including each polarizing material.

In the present invention, the polarizing material layer is preferably a single layer including one type of polarizing material. Since it is a single layer, it is easy to manufacture and process, and a highly accurate polarizer can be stably manufactured.

The content of the polarizing material layer in the thin line is not particularly limited as long as a desired extinction ratio can be obtained.

Specifically, the content of the polarizing material layer in the thin line is preferably 80% by mass or more, and more preferably 90% by mass or more, and particularly preferably 100% by mass, that is, the thin line includes only the polarizing material layer. The reason is that it is easy to set the extinction ratio as described above.

The content is the mass ratio of the cross section of the polarizing material layer in the width direction of the thin line. As a measuring method, the content is not particularly limited as long as it can measure the content with high accuracy. The method of measuring the content of the polarizing material is the same.

The cross-sectional observation shape of the polarizing material layer is not particularly limited as long as a desired extinction ratio can be obtained, and for example, it can be a quadrangular shape such as a square or a rectangle.

(2) Thin line

The thin wire in the present invention has at least the above-mentioned polarizing material layer. Although it may have only the above-mentioned polarizing material layer, it may optionally have a non-polarizing material layer containing other materials than the above-mentioned polarizing material as a main raw material.

The other materials included in the non-polarizing material layer are not particularly limited as long as the required extinction ratio can be obtained. For example, in the case of using a molybdenum silicide-based material as the above-mentioned polarizing material, silicon oxide can be cited. . The reason is that in the case where a silicon oxide layer containing silicon oxide as a non-polarizing material is formed on the molybdenum silicide-based material layer containing the molybdenum silicide-based material as the polarizing material, the molybdenum silicide-based material film can be used. The method of dry etching to obtain the thin lines of the above structure is easy to form the thin lines including the above molybdenum silicide-based material layer and also functions as a protective film.

In the case where the polarizing material layer is a molybdenum silicide-based material layer including a molybdenum silicide-based material as the polarizing material, and the non-polarizing material layer is a silicon oxide layer containing silicon oxide as a non-polarizing material, it is used as a formation site of the silicon oxide layer It can be formed on the above-mentioned molybdenum silicide-based material layer. In the case where the above-mentioned molybdenum silicide-based material layer is formed on the transparent substrate, it is preferable to cover the above-mentioned molybdenum silicide-based material layer except the transparent substrate side surface. The silicon oxide layer is formed on all surfaces. The reason for this is that it is easy to form a fine line including the above-mentioned molybdenum silicide-based material layer.

The film thickness of the silicon oxide layer is not particularly limited as long as a desired extinction ratio can be obtained, but from the viewpoint of setting a high extinction ratio, the thinner the better, for example, preferably 10 nm or less, Among these, it is preferably 6 nm or less, and particularly preferably 4 nm or less. The reason is that the extinction ratio can be made excellent by the film thickness. The lower limit of the film thickness is not particularly limited because it is preferably as thin as possible, but it is preferably 2 nm or more in terms of ease of production.

Furthermore, the film thickness of the silicon oxide layer refers to the thickness from the surface of the polarizing material layer. The maximum thickness refers specifically to the thickness indicated by d in FIG. 2.

As a method for measuring the film thickness, a common measurement method in the field of polarizers can be used. For example, the shape of the film surface layer can be measured with an atomic force microscope (AFM), and the polarization characteristics can be measured with a transmission-type ellipsometry. In this way, the composition of the constituent films and their respective film thicknesses are obtained.

The film thickness of the thin line is not particularly limited as long as it can be a film thickness having a desired extinction ratio, but the thicker the film thickness, the higher the extinction ratio, and the thinner the film thickness, the P wave is transmitted. The higher the tendency, the higher the extinction ratio and the P-wave transmittance.

In the present invention, the film thickness is preferably in a range of 60 nm to 180 nm. Among them, it is preferably in a range of 80 nm to 160 nm, and particularly preferably in a range of 100 nm to 150 nm.

In addition, by suppressing the film thickness to be low, the photoresist pattern, the photolithography method, and the like are used to form a photoresist pattern, or the accuracy of the etching process is improved, so that a highly accurate polarizer can be produced. In addition, the durability of physical cleaning such as ultrasonic cleaning using ultra-high frequency acoustic waves is also improved.

In addition, the film thickness of the thin line refers to the maximum thickness among the thicknesses perpendicular to the length direction and the width direction of the thin line. In the case where the thin line has a non-polarizing material layer, it means the film thickness including the non-polarizing material layer. Specifically, it refers to the thickness indicated by a in FIG. 2.

In addition, the film thickness of the thin wires may include different film thicknesses in one polarizer, but they are usually formed with the same film thickness.

The width of the thin line is not particularly limited as long as it can be set to have a desired extinction ratio. The wider the width, the higher the extinction ratio, and the wider the width, the lower the P-wave transmittance. Therefore, considering the balance between the transmittance and the extinction ratio of the P wave, it can be set in the range of 30nm to 80nm, for example.

Furthermore, the width of the thin line refers to the length in a direction perpendicular to the length direction of the thin line. In the case where the thin line includes a non-polarizing material layer, it means the width also including the non-polarizing material layer. Specifically, it refers to the length indicated by b in FIG. 2.

In addition, the width of the thin lines may include different widths in a polarizer, but they are usually formed with the same width.

The duty ratio of the thin line, that is, the ratio of the width of the thin line to the pitch (width / pitch) is not particularly limited as long as it can be set to a duty ratio having a desired extinction ratio. For example, it can be set to In the range of 0.25 to 0.70, it is preferably in the range of 0.30 to 0.50, and particularly preferably in the range of 0.30 to 0.40. The reason is that when the duty ratio is in the above range, both the extinction ratio and the P-wave transmittance can be set to good values.

The distance between the thin lines is not particularly limited as long as it can be set to have a desired extinction ratio. Although it varies depending on the wavelength of the light used to generate linearly polarized light, etc., it can be set as the distance between the light. Less than one and a half wavelengths. More specifically, in the case where the above-mentioned light is ultraviolet light, the above-mentioned pitch can be set in a range of, for example, 80 nm to 150 nm, and preferably in a range of 100 nm to 120 nm, and particularly preferably in a range of 100 nm to 110 nm Within range. The reason is that by using the pitch, the extinction ratio with respect to light having a wavelength of 300 nm or less can be excellent.

In addition, the above-mentioned thin line distance refers to the maximum width of the distance between thin lines adjacent to each other in the width direction. In the case where the thin line includes a non-polarizing material layer, the non-polarizing material layer is also included. Specifically, it refers to the width indicated by c in FIG. 2.

In addition, the distance between the thin lines may include different distances in a polarizer, but they are usually formed at the same distance.

The number and length of the thin lines are not particularly limited as long as the number and length can be set to have a desired extinction ratio. The use of the polarizer according to the present invention Wait and set appropriately.

2.Transparent substrate

The polarizer of the present invention has the above-mentioned thin lines, and generally has a transparent substrate for forming the above-mentioned thin lines.

The transparent substrate is not particularly limited as long as it can stably support the fine wires, has excellent light transmittance, and can be less deteriorated by exposure to light. For example, optically polished synthetic quartz glass, fluorescent Stones, calcium fluoride, and the like can be commonly used synthetic quartz glass with stable quality. In the present invention, among them, synthetic quartz glass can be preferably used. The reason is that the quality is stable, and even when light with a short wavelength, that is, light with high energy exposure, is used, there is less degradation.

The thickness of the transparent substrate can be appropriately selected according to the use, size, and the like of the polarizer of the present invention.

3. Polarizer

The polarizer of the present invention has the thin lines described above, and the extinction ratio of light having a wavelength of 250 nm is 40 or more.

The extinction ratio (P-wave transmittance / S-wave transmittance) of the light having a wavelength of 250 nm is not particularly limited as long as it is 40 or more, preferably 50 or more, and 60 or more is particularly preferable. The reason for this is that by being in the above range, it is possible to stably provide an alignment restricting force to the photo-alignment layer.

The larger the extinction ratio is, the better, so the upper limit is not particularly limited.

In addition, the measurement method of the extinction ratio described above can be a common measurement method in the field of polarizers. For example, a transmission-type elliptical polarizer capable of measuring the polarization characteristics of ultraviolet light can be used. The measurement is performed with a light meter, for example, a transmission-type elliptical polarimeter such as VUV-VASE manufactured by Woollam.

As the P-wave transmittance of the above-mentioned polarizer (P-wave component in outgoing light / P-wave component in incident light), there is no particular limitation as long as the required extinction ratio can be obtained, and it is preferable for light having a wavelength of 250 nm. It is 0.3 or more, and among them, 0.4 or more is preferable, and 0.6 or more is particularly preferable. The reason is that by setting the P-wave transmittance as described above, it is possible to efficiently provide an alignment restricting force to the optical alignment layer.

In addition, as a method for measuring the P-wave transmittance, a usual measurement method in the field of polarizers can be used. For example, a transmission-type elliptical polarimeter capable of measuring the polarization characteristics of ultraviolet light can be used, for example, manufactured by Woollam Corporation. VUV-VASE and other transmission-type ellipsometer for measurement.

As the application of the above-mentioned polarizer, linear polarized light for generating light with a short wavelength such as an ultraviolet region is preferable, and among them, linear polarized light for generating light in a wavelength range of 200 nm to 400 nm is preferable.

As a material of the light alignment film, there are known those who align with light having a wavelength of about 260 nm, those who align with light of about 300 nm, those who align with light at about 365 nm, and a light source lamp having a wavelength corresponding to the material. The reason is that a polarizer including the above-mentioned molybdenum silicide-based material layer can be used in the alignment of the light alignment films.

In addition, when the refractive index of the polarizing material is in the range of 2.0 to 3.2, and the extinction coefficient of the polarizing material is in the range of 2.7 to 3.5, the polarizer is preferably used to generate 200 nm to 400 nm. Among the linearly polarized light in the range, linearly polarized light for generating light in the range of 240 nm to 400 nm is preferred, and linearly polarized light for generating light in the range of 240 nm to 370 nm is particularly preferred. The reason is that, in the case of the above-mentioned polarizing material, it can be shown that the wavelength of the light is within the above range and the extinction ratio and P Both characteristics of wave transmittance are excellent.

The reason is that in the ultraviolet region, the extinction ratio and P-wave transmittance are good in a wide range, so that polarizers of the same material can also be used for materials of a plurality of types of light alignment films having different sensitivity wavelengths.

In addition, in the case where the refractive index of the polarizing material is in the range of 2.3 to 2.8, and the extinction coefficient of the polarizing material is in the range of 1.4 to 2.4, the polarizer is preferably used to generate 200 nm to 350 nm. The linearly polarized light of the light in the range is preferably the linearly polarized light used to generate the light in the range of 240 nm to 300 nm, and the linearly polarized light used to generate the light in the range of 240 nm to 280 nm is particularly preferable. The reason is that in the case of the above-mentioned polarizing material, it is possible to display the characteristics that the wavelength of the light is within the above-mentioned range and that both the extinction ratio and the P-wave transmittance are excellent, and that the polarization axis of the polarized light can be rotated A small amount. It is particularly suitable for materials of light alignment films that align at a wavelength of about 260 nm.

Moreover, the so-called linearly polarized light used to generate light of a predetermined wavelength range may be any light as long as the light irradiated to the polarizer of the present invention includes the light of the predetermined wavelength range described above. Among them, it is preferable to include light of a predetermined wavelength range. The light, that is, the energy of the light in a predetermined wavelength range is more than 50% of the total energy of the light irradiated to the polarizer, more preferably 70% or more of the total energy, and particularly preferably, it is more than 90% of the total energy.

Further, in the present invention, it is preferable to apply an alignment restricting force to a light alignment film for a liquid crystal display device that holds a liquid crystal material in the liquid crystal display device. The reason is that the alignment restricting force can be effectively given to the light alignment film.

The manufacturing method of the polarizer of this invention is demonstrated.

FIG. 3 is a step diagram showing an example of a method for manufacturing a polarizer of the present invention. As shown in FIG. 3, first, the refractive index and the extinction coefficient of the polarizing material can be determined by simulation by setting the extinction ratio of the polarizer at a wavelength of 250 nm to 40 or more. A polarizing material (not shown) having the refractive index and the extinction coefficient. Next, a transparent substrate 1 is prepared (FIG. 3 (a)), and a polarizing material film 3 ′ containing a selected polarizing material is formed on the transparent substrate by a sputtering method, thereby forming a polarizer substrate, which is a substrate for polarizers. A transparent substrate and a polarizing material film formed on the transparent substrate and containing a polarizing material (FIG. 3 (b)).

Moreover, as a substrate for a polarizer, a hard mask (not shown) for processing a polarizing material may be provided on the polarizing material film 3 '.

Next, a patterned photoresist 11 is formed by a photolithography method, and the patterned photoresist 11 is etched as a mask (FIG. 3 (c)), thereby forming a thin line 2 including a polarizing material layer 3 (FIG. 3 (d) )).

The silicon oxide film 4 may be formed by forming an oxide film on the surface of the molybdenum silicide-based material layer 3 as a polarizing material layer.

When the substrate for a polarizer has a hard mask formed on a polarizing material film, the hard mask can be etched using the photoresist 11 as an etching mask, and the hard mask can be etched into a pattern. To etch the mask, the polarizing material film is etched.

By using a hard mask as an etching mask in this manner, there is an advantage that fine pattern processing of a polarizing material film can be performed with higher accuracy.

Thereafter, a desired polarizer is obtained by peeling off the hard mask. In a case where the required performance can be obtained in a state where the hard mask remains, the hard mask may remain.

As the material of the hard mask, when the polarizing material film is a molybdenum silicide-based material, a chromium-based material can be used. The chrome-based material functions as an etching mask during the etching of molybdenum silicide-based materials.

Examples of the chromium-based material include chromium, chromium oxide, chromium nitride, and chromium oxynitride.

The thickness of the hard mask is preferably a thickness that can withstand the etching of the polarizing material film. In the case where the polarizing material film is about 100 nm, the thickness is preferably about 5 nm to 15 nm.

The hard mask system can be formed on a polarizing material film by a sputtering method or the like.

FIG. 4 is a diagram showing a configuration example of a light alignment device of the present invention.

The light alignment device 20 shown in FIG. 4 includes a polarizer unit 21 and an ultraviolet lamp 22 that house the polarizer 10 of the present invention. The ultraviolet rays irradiated from the ultraviolet lamp 22 are irradiated by the polarizer 10 housed in the polarizer unit 21. The light is polarized, and the polarized light (polarized light 24) is irradiated to the light alignment film 25 formed on the workpiece 26, thereby giving the light alignment film 25 an alignment restricting force.

The optical alignment device 20 includes a mechanism for moving the workpiece 26 on which the optical alignment film 25 is formed. By moving the workpiece 26, the polarized light 24 can be irradiated to the entire surface of the optical alignment film 25. For example, in the example shown in FIG. 4, the workpiece 26 moves in the right direction (the direction of the arrow in FIG. 4) in the figure.

Moreover, in the example shown in FIG. 4, the workpiece 26 is shown as a rectangular flat plate. However, in the present invention, the shape of the workpiece 26 is not particularly limited as long as it can be irradiated with polarized light 24. For example, The workpiece 26 may also be in the form of a film, and may also be wound in a belt-like (reticulated) form.

In the present invention, the ultraviolet lamp 22 is preferably one capable of irradiating ultraviolet light having a wavelength of 240 nm or more and 400 nm or less, and the light alignment film 25 is preferably one having sensitivity to ultraviolet light having a wavelength of 240 nm or more and 400 nm or less. . The reason is that the optical alignment device 20 includes the polarizer 10 of the present invention which has an excellent extinction ratio with respect to the ultraviolet light in the above-mentioned wavelength range and has a high P-wave transmittance. Therefore, the light-alignment device 20 can efficiently transmit light to the above-mentioned wavelength range. A light-alignment film having an ultraviolet light sensitivity imparts an alignment restriction force, thereby improving productivity.

In addition, in order to efficiently radiate the light from the ultraviolet lamp 22 to the polarizer, the light alignment device 20 preferably has reflected ultraviolet rays on the back side (opposite the polarizer unit 21) or the side of the ultraviolet lamp 22光 的 镜 镜 23。 The light reflecting mirror 23.

In addition, in order to efficiently impart an alignment restricting force to a large-area light alignment film 25, it is preferable to configure the light alignment device 20 in such a manner that, as shown in FIG. 4, a rod-shaped lamp is used for the ultraviolet light lamp 22, The polarized light 24 irradiated in a direction orthogonal to the moving direction of the workpiece 26 (the direction of the arrow in FIG. 4) becomes a longer irradiation area.

In this case, the polarizer unit 21 also becomes a form suitable for irradiating the large-area light alignment film 25 with polarized light 24. Due to the difficulty in manufacturing a large-area polarizer, a plurality of polarizer units 21 are arranged in the polarizer unit 21 The situation of polarizers is better both technically and economically.

In addition, the light alignment device of the present invention may have a configuration including a plurality of ultraviolet lamps.

FIG. 5 is a diagram showing another configuration example of the light alignment device of the present invention.

As shown in FIG. 5, the light alignment device 30 includes two ultraviolet lamps 32, and a polarizer unit 31 that houses the polarizer 10 of the present invention is provided between each of the ultraviolet lamps 32 and the workpiece 36. Each of the ultraviolet lamps 32 is provided with a reflecting mirror 33.

In this way, by having a plurality of ultraviolet lamps 32, the amount of irradiation of the polarized light 34 of the light alignment film 35 formed on the workpiece 36 can be increased compared with the case where one ultraviolet lamp 32 is provided. Therefore, the moving speed of the workpiece 36 can be increased compared with the case where one ultraviolet lamp 32 is provided, and as a result, productivity can be improved.

Furthermore, in the example shown in FIG. 5, a configuration is shown in which two ultraviolet lamps 32 are arranged side by side in the moving direction of the workpiece 36 (the direction of the arrow in FIG. 5), but the present invention is not limited to this. For example, It is also possible to have a configuration in which a plurality of ultraviolet lamps are arranged in a direction orthogonal to the moving direction of the workpiece 36, and further, a plurality of directions may be arranged in two directions in a moving direction of the workpiece 36 and a direction orthogonal to the moving direction of the workpiece 36 The composition of a UV lamp.

The example shown in FIG. 5 shows a configuration in which one polarizer unit 31 is provided for one ultraviolet lamp 32, but the present invention is not limited to this. For example, A configuration in which one polarizer unit is provided for a plurality of ultraviolet lamps. In this case, one polarizer unit only needs to have a size capable of irradiating a plurality of ultraviolet light lamps.

FIG. 6 is a diagram showing an example of an arrangement form of polarizers in the light alignment device of the present invention. In addition, the arrangement forms of the polarizers shown in FIGS. 6 (a) to (d) each indicate a form in which the flat polarizer 10 and the film of the light alignment film are arranged facing the ground plane.

For example, in the light alignment device 20 shown in FIG. 4, in a case where the strip-shaped polarized light 24 is irradiated in a direction orthogonal to the moving direction of the workpiece 26, it is effective to put it in the polarizer unit 21. As shown in FIG. 6 (a), a plurality of polarizers 10 are arranged in a direction orthogonal to the moving direction (arrow direction) of the workpiece 26. The reason is that the number of polarizers 10 can be reduced.

On the other hand, in the case where the area of the polarizer 10 is small or the light alignment device includes a plurality of ultraviolet lamps, it is preferable to be as shown in FIG. 6 (b), except for the direction of movement relative to the workpiece. (Arrow direction) A plurality of polarizers 10 are arranged in a direction orthogonal to each other, and a plurality of polarizers 10 are also arranged in a direction along the moving direction (arrow direction). This is because the light from the ultraviolet lamp can be irradiated to the photo-alignment film without waste, and productivity can be improved.

Here, in the present invention, as shown in FIG. 6 (c) and FIG. 6 (d), it is preferable that a plurality of polarizers are arranged so as not to be aligned in a line along the moving direction (arrow direction) of the workpiece. , Displace the adjacent polarizers in a direction orthogonal to the moving direction of the workpiece (upper and lower directions in the figure).

In other words, in the present invention, it is preferable that the boundary portion between a plurality of polarizers adjacent to the direction orthogonal to the moving direction of the light alignment film is connected discontinuously in the moving direction of the light alignment film. With a plurality of polarizers.

The reason is that polarized light is not normally generated at the boundary between polarizers. The adverse effect of the junction on the light alignment film is controlled.

Here, the configuration shown in FIG. 6 (c) is the following configuration: the plurality of polarizers arranged have the same shape and the same size, and are positioned above and below the polarizers adjacent to each other in the left and right directions to polarize light. The step difference of 1/2 of the size in the up-down direction of the sheet is shifted in the up-down direction.

In addition, the configuration shown in FIG. 6 (d) is as follows: the polarizers arranged have the same shape, the same size, and the positions of the polarizers adjacent to each other in the left and right directions in the up and down direction are more polarizers. A step of 1/2 smaller in the vertical direction is shifted in the vertical direction.

The above situation is explained in more detail.

In the configuration shown in FIG. 6 (c), the boundary 41 between the polarizer 10a and the polarizer 10b arranged adjacent to each other in the up-down direction is blocked by the polarizer 10c and the polarizer 10d arranged in the left-right direction. Direction.

That is, in the arrangement form shown in FIG. 6 (c), the boundary portions between the polarizers adjacently arranged in the up-down direction are prevented from being continuously connected in the left-right direction.

Therefore, when the polarizing light is irradiated to the photo-alignment film by using the configuration shown in FIG. 6 (c), it is possible to suppress the adverse influence caused by the interface between the polarizers from continuously affecting the photo-alignment film.

Similarly, in the arrangement shown in FIG. 6 (d), the boundary between the polarizers arranged adjacent to each other in the up-down direction is prevented from being continuously connected in the left-right direction.

Therefore, in the case where polarized light is irradiated to the photo-alignment film by using the configuration shown in FIG. 6 (d), it is possible to suppress the adverse effects caused by the interface between the polarizers from continuously affecting the photo-alignment film.

Furthermore, in the configuration shown in FIG. 6 (c), the polarizer The step size of 1/2 of the direction is shifted from the up and down direction, so for the left and right direction (moving direction of the workpiece), the position of the upper and lower direction of the boundary portion 41 is aligned every 2 polarizers.

On the other hand, in the configuration shown in FIG. 6 (d), the position of the boundary portion 42 in the up and down direction is shifted because it is shifted by a step smaller than the half of the size of the polarizer in the up and down direction. Makes it harder to align.

Therefore, in the arrangement shown in FIG. 6 (d), it is possible to further suppress the adverse influence caused by the interface between the polarizers from continuously affecting the light alignment film.

Furthermore, in the examples shown in FIGS. 6 (a) to 6 (d), the polarizers are arranged so that their sides are in contact with each other, but the present invention is not limited to this form, and may be adjacent to each other. The interface between the polarizers has the form of a gap.

Moreover, it can also be set as the form which does not generate a gap in the boundary part between polarizers by overlapping the edge parts of adjacent polarizers mutually.

The present invention is not limited to the embodiments described above. The above-mentioned embodiment is exemplified. Those having substantially the same configuration and exhibiting the same effect as the technical idea described in the scope of patent application of the present invention are included in the technical scope of the present invention regardless of the form.

[Example]

Examples are given below to further specifically describe the present invention.

[Example 1]

A thin line model of a polarizing material layer consisting of polarizing materials with a film thickness of 80 nm and a width and a pitch of 72 nm and 120 nm is based on "Numerical Analysis of Diffractive Optical Elements and Their Applications" (Published by Maruzen, Chief Editor Kodate Kashiko) The described Rigorous Coupled Wave Analysis (RCWA) performs light comparison at a wavelength of 250nm. Simulation of the extinction ratio of the refractive index and extinction coefficient. The results are shown in Table 1 below.

According to Table 1, in the case where the refractive index that can be realized by MoSi-based materials is in the range of 2.0 to 3.0 and the extinction coefficient is in the range of 2.7 to 3.5, the extinction ratio appears to be more than 40 (200.4 to 1203.8 Range).

[Example 2]

The same simulation as in Example 1 was performed except that the thin line model was a thin line model having a film thickness of 80 nm and a width and a pitch of 60 nm and 120 nm. The results are shown in Table 2 below.

According to Table 2, when the refractive index that can be realized by MoSi-based materials is in the range of 2.0 to 3.0, and the extinction coefficient is in the range of 2.7 to 3.5, the extinction ratio appears to be more than 40 (72.9 to 263.9 Within range).

[Example 3]

The same simulation as in Example 1 was performed except that the thin line model was a thin line model with a film thickness of 80 nm and a width and a pitch of 48 nm and 120 nm. The results are shown in Table 3 below.

According to Table 3, in the case where the extinction coefficient that can be achieved by MoSi-based materials is in the range of 2.7 to 3.1 and the refractive index is in the range of 2.2 to 3.0 (Condition 3-1); the extinction coefficient is 3.2 to When the refractive index is within the range of 3.3 and the refractive index is within the range of 2.1 to 3.0 (Condition 3-2); or when the extinction coefficient is within the range of 3.4 to 3.5 and the refractive index is within the range of 2.0 to 3.0 (Condition 3-3) The extinction ratio was 40 or more. In addition, as the specific extinction ratio, it is within the range of 41.8 to 85.1 in condition 3-1, within the range of 40.9 to 79.7 in condition 3-2, and between 40.0 and 80.1 in condition 3-3. Within this range, the value of the extinction ratio as a whole of the thin line model is in the range of 40.0 to 85.1.

[Example 4]

The same simulation as in Example 1 was performed except that the thin line model was a thin line model having a film thickness of 60 nm and a width and a pitch of 72 nm and 120 nm. The results are shown in Table 4 below.

According to Table 4, when the refractive index that can be achieved by MoSi-based materials is in the range of 2.0 to 3.0 and the extinction coefficient is in the range of 2.7 to 3.5, the extinction ratio is shown to be 40 or more (52.8 to 309.6). Within range).

[Example 5]

The same simulation as in Example 1 was performed except that the thin line model was a thin line model having a film thickness of 60 nm and a width and a pitch of 60 nm and 120 nm. The results are shown in Table 5 below.

According to Table 5, in the case where the extinction coefficient that can be realized by MoSi-based materials is in the range of 2.7 to 2.9 and the refractive index is in the range of 2.4 to 3.0 (Condition 5-1); the extinction coefficient is in the range of 3.0 to In the range of 3.3 and the refractive index is in the range of 2.3 to 3.0 (Condition 5-2); or in the case of the extinction coefficient in the range of 3.4 to 3.5 and the refractive index is in the range of 2.2 to 3.0 (Condition 5-3) The extinction ratio was 40 or more. Furthermore, as the specific extinction ratio, it is in the range of 43.4 to 85.1 in condition 5-1, in the range of 40.2 to 78.1 in condition 5-2, and in 41.2 to 76.9 in condition 5-3. Within this range, as a whole of the thin line model, the value of the extinction ratio is expressed as a value of 40.2 to 85.1.

[Example 6]

The same simulation as in Example 1 was performed except that the thin line model was a thin line model having a film thickness of 60 nm and a width and a pitch of 48 nm and 120 nm. The results are shown in Table 6 below.

According to Table 6, when the refractive index that can be achieved by MoSi-based materials is in the range of 2.0 to 3.0 and the extinction coefficient is in the range of 2.7 to 3.5, there is no extinction ratio of In the region of 40 or more, but under the condition that the extinction coefficient is in the range of 1.5 to 2.4 and the refractive index is part of the range of 2.6 to 3.0, the extinction ratio appears to be 40 or more (in the range of 41.7 to 493.0).

[Example 7]

The same simulation as in Example 1 was performed except that the thin line model was a thin line model having a film thickness of 40 nm and a width and a pitch of 72 nm and 120 nm. The results are shown in Table 7 below.

According to Table 7, when the extinction coefficient that can be realized by the MoSi-based material is in the range of 3.0 to 3.5 and the refractive index is 3.0, the extinction ratio appears to be 40 or more (in the range of 40.0 to 42.4).

[Reference Example 1]

The same simulation as in Example 1 was performed except that the thin line model was a thin line model having a film thickness of 40 nm and a width and a pitch of 60 nm and 120 nm. The results are shown in Table 8 below.

According to Table 8, conditions indicating that the extinction ratio was 40 or more were not obtained.

[Reference Example 2]

The same simulation as in Example 1 was performed except that the thin line model was a thin line model having a film thickness of 40 nm and a width and a pitch of 48 nm and 120 nm. The results are shown in Table 9 below.

According to Table 9, conditions indicating that the extinction ratio was 40 or more were not obtained.

(Simulation Summary)

According to the tables showing the correlation between the refractive index and the extinction coefficient and the extinction ratio in Tables 1 to 9, it was confirmed that by selecting the range of the refractive index and the extinction coefficient from the shaded portion, the extinction ratio can be set to 40 or more.

For example, in the case of the thin line (polarizing material layer) of Example 1 (film thickness of 86 μm, width of 72 μm, and pitch of 120 μm), it was confirmed that the extinction ratio can be adjusted within the range of the refractive index of 2 or more and the extinction coefficient of 1.5 to 3.5. Set it to 40 or more.

[Example 8]

A synthetic quartz glass with a thickness of 6.35 mm was prepared as a transparent substrate, and a mixed target of molybdenum and silicon (Mo: Si = 1: 2mol%) was used to form a film thickness of 120 nm by reactive sputtering in a mixed gas environment of argon and nitrogen. The nitrided molybdenum silicide film is used as a molybdenum silicide-based material film. The amount of nitrogen is about one and a half of the content of Mo.

Furthermore, a 7 nm chromium oxynitride film was formed on the molybdenum silicide film as a hard mask by a sputtering method.

Then, a patterned photoresist having a line and gap pattern with a pitch of 100 nm is formed on the hard mask. Thereafter, the hard mask of the chromium-based material is dry-etched by using a mixed gas of chlorine and oxygen as an etching gas, and then the molybdenum silicide-based material film is dry-etched by using SF ₆ , and thereafter the hard mask is peeled off to thereby dry the mask. Obtain a polarizer.

The width, thickness, and pitch of the thin lines of the obtained polarizers were measured using a SEM measuring device LWM9000 manufactured by Vistac and an AFM device DIMENSION-X3D manufactured by VEECO, respectively, and were 34 nm, 120 nm, and 100 nm, respectively.

(Structure Evaluation of Thin Line)

The structure of the thin line of the polarizer of Example 8 was evaluated using a transmission-type ellipsometer (VUV-VASE manufactured by Woollam).

As a result, it was confirmed that the thin line had a molybdenum silicide-based material layer including a molybdenum silicide-based material having a width and a thickness of 29.8 nm and 115.8 nm, respectively, and a film thickness on the upper surface and a side surface of the molybdenum silicide-based material layer. The oxide films containing silicon oxide are 4.2nm and 4.2nm, respectively.

The refractive index and extinction coefficient of the molybdenum silicide-based material layer, that is, the refractive index and extinction coefficient of the molybdenum silicide-based material (Mo: Si = 1: 2mol%) were measured using a transmission-type ellipsometry (VUV-VASE manufactured by Woollam). After the extinction coefficient, the refractive index n at the wavelength of 250nm is 2.30. The extinction coefficient k at a length of 250 nm is 3.24. The refractive index n at a wavelength of 365 nm is 3.94, and the extinction coefficient k is 2.85.

(Measurement of P-wave transmittance and S-wave transmittance)

For the polarizer of Example 8, the transmittance of the P-wave transmittance (the P-wave component in the emitted light / incidence in the emitted light) of the ultraviolet light in the range of 200 nm to 700 nm was measured with a transmission-type ellipsometry (VUV-VASE manufactured by Woollam). P-wave component in light) and S-wave transmittance (S-wave component in outgoing light / S-wave component in incident light), and the extinction ratio (P-wave transmittance / S-wave transmittance) was calculated. The results are shown in Table 10 and Fig. 7.

As shown in Table 10 and FIG. 7, the P-wave transmittance of the polarizer is 70.5% or more and the extinction ratio is 79.5% or more in the range of 240nm to 400nm.

In addition, in the range of the wavelength of 240 nm to 260 nm, the P-wave transmittance of the polarizer is 70.5% or more, and the extinction ratio is 79.5 or more.

In addition, in the range of the wavelength of 280 to 320 nm, the P-wave transmittance of the polarizer is 73.7% or more, and the extinction ratio is 208.5 or more.

In addition, in the range of wavelengths from 355 nm to 375 nm, the P-wave transmittance of the polarizer is 79.6% or more, and the extinction ratio is 346.5 or more.

As a material of the photo-alignment film, there are known those who align with light having a wavelength of about 260 nm, those who align with light of about 300 nm, and those who align with light of about 365 nm. They can be used in various light-alignment films according to the above properties. It was confirmed that the material can be suitably used as a material for a photo-alignment film that aligns with light around 365 nm.

The S-wave transmittance of the polarizer of Example 8 was 8.44% or less and the extinction ratio was 10.9 or more in a range of 200 nm to 600 nm.

In addition, in the range of the wavelength from 220 nm to 500 nm, the deviation of Example 8 The S-wave transmittance of the light sheet is below 2.69%, and the extinction ratio is above 33.5.

It was confirmed that the polarizer of Example 8 maintained an extinction ratio of 10 or more at a wavelength of about 200 nm to 600 nm.

Generally, it is known that the absorption spectrum of a light alignment film has a peak in a specific wavelength range, but absorbs light in a wide range of wavelengths.

Therefore, in the conventional polarizer, a band-pass filter is used to intercept light in a wavelength range in which the extinction ratio becomes low. For example, in a polarizer having a thin line including aluminum, light in a wavelength range of 300 nm or less is cut off, and in a polarizer having a thin line including titanium oxide, light in a wavelength range of 300 nm or more is cut off.

However, in the above method, there is a disadvantage that the efficiency of imparting an alignment restricting force to the light alignment film due to the interception of light also decreases.

On the other hand, the polarizer of the present invention can ensure a certain extinction ratio over a wide range of wavelengths as described above. Therefore, it can be confirmed that light of a wide range of wavelengths can be efficiently used without using a band-pass filter. It is used to apply an alignment restricting force to a light alignment film.

[Example 9]

In the case of the polarizer 10 shown in FIG. 8, light with a wavelength of 250 nm is incident from the side where the thin lines are formed at an azimuth angle of 45 degrees and an incident angle of 60 degrees. (Maruzen Publishing, Editor-in-Chief, Kodate Kozakako) described the RCWA (Rigorous Coupled Wave Analysis) simulation model, and calculated the refractive index n and extinction coefficient k of the polarizing material and the amount of rotation of the polarization axis of the polarized light emitted from the polarizer (°). The results are shown in Table 11 and Fig. 9 below.

Furthermore, in the simulation model of the ninth embodiment, for easy calculation, the thin line of the polarizer 10 shown in FIG. 8 is a thin line model of a polarizing material layer (single-layer structure) including a polarizing material. The thickness of the thin lines of the polarizer 10 is set to 100 nm, the width is set to 33 nm, and the pitch is set to 100 nm.

The amount of rotation of the polarization axis is based on the direction of the polarization axis when the incident angle of incident light is 0 degrees, and represents the amount of rotation (rotation angle) from that direction.

In the graph shown in FIG. 9, the ranges of the refractive index n and the extinction coefficient k represented by m, n, o, p, q, and r represent the polarization axis rotation amounts when the azimuth angle is 45 degrees and the incident angle is 60 degrees. It ranges from +6 degrees to +9 degrees, +3 degrees to +6 degrees, 0 degrees to +3 degrees, -3 degrees to 0 degrees, -6 degrees to -3 degrees, and -9 degrees to -6 degrees. Therefore, in the graph shown in FIG. 9, the range of the refractive index n and the extinction coefficient k where the rotation amount of the polarizing axis when the azimuth angle is 45 degrees and the incident angle is 60 degrees is -3.0 degrees to +3.0 degrees is shown as a white area. . In addition, a black line near the center of the white region indicates the refractive index n and the extinction coefficient k where the amount of rotation of the polarization axis is 0 degrees.

On the other hand, the rotation amount of the polarization axis is in the range of the refractive index n and the extinction coefficient k from -6.0 to -3.0 degrees, and the rotation amount of the polarization axis is in the refractive index n and the extinction from +3.0 degrees to +6.0 degrees. The range of the optical coefficient k is shown as a light gray area in the graph shown in FIG. 9.

As shown in Table 11 and FIG. 9, it was confirmed that by appropriately selecting the ranges of the refractive index n and the extinction coefficient k of the polarizing material constituting the thin line 2, even when the incident angle of the light incident on the polarizer becomes large, It can also suppress the rotation of the polarization axis of polarized light.

[Example 10]

Secondly, in the case of the polarizer 10 shown in FIG. 10, light with a wavelength of 250 nm is incident from the side where the thin lines are formed at an azimuth angle of 0 degrees and an incident angle of 0 degrees. Apply the simulation model of RCWA (Rigorous Coupled Wave Analysis) described in "Maruzen Publishing, Chief Editor Kodate Kozaka", and calculate the relationship between the refractive index n, the extinction coefficient k, and the extinction ratio of the thin-line polarizing material. The results are shown in Table 12 and Fig. 11 below.

Furthermore, in the simulation model of the tenth embodiment, for easy calculation, The thin line of the polarizer 10 shown in FIG. 10 is a thin line model of a polarizing material layer (single-layer structure) including a polarizing material. The thickness of the thin lines of the polarizer 10 is set to 100 nm, the width is set to 33 nm, and the pitch is set to 100 nm.

In FIG. 11, the ranges of the refractive index n and the extinction coefficient k represented by s, t, u, and v respectively represent an azimuth angle of 0 degrees and an extinction ratio at an incident angle of 0 degrees to 10 ⁴ to 10 ⁵ , 10 ³ to 10 ⁴ , 10 ² to 10 ³ , 10 to 10 ² and 1 to 10 ranges.

In addition, based on Tables 11 and 12, and FIGS. 9 and 11, if the relationship between each refractive index and each extinction coefficient and the amount of rotation of the polarization axis and the relationship between each refractive index and each extinction coefficient and extinction ratio can be compared, It is confirmed that if the refractive index is the same or a similar value, the extinction ratio can be improved by using a material having a high extinction coefficient with an extinction coefficient smaller than the polarization axis rotation amount as the polarizing material.

In the case of using a molybdenum silicide (MoSi) -based material, the refractive index n and the extinction coefficient k at a wavelength of 250 nm can be adjusted by adjusting the composition or the content of oxygen or nitrogen. The range is about 2.2 ≦ n ≦ 3.0 and 0.7 ≦ k ≦ 3.5. It can be confirmed that the refractive index and the extinction coefficient which can achieve a high extinction ratio while suppressing the rotation amount of the polarization axis are in the range of 2.3 to 2.8, and the extinction coefficient is in the range of 1.4 to 2.4.

It can be confirmed that the refractive index is in the range of 2.3 to 2.8 and the extinction coefficient is in the range of 1.7 to 2.2, especially when the refractive index is in the range of 2.4 to 2.8 and the extinction coefficient is in the range of 1.8 to 2.1. Within the range, the effect becomes more significant.

[Example 11]

RCWA (Rigorous Coupled Wave) based on RCWA (Rigorous Coupled Wave) Analysis), and calculated the relationship between the polarization axis rotation of the polarized light emitted from the polarizer and the angle of incidence (0 °, 10 °, 20 °, 30 °, 40 °, and 50 °). The results are shown in FIG. 12.

[Example 12]

Regarding the refractive index n and the extinction coefficient k of the polarizing material, the refractive index n at a wavelength of 250 nm is set to 2.66, the extinction coefficient k is set to 1.94, and the thickness of the thin line is set to 170 nm. Example 11 calculated the relationship between the polarization axis rotation of the polarized light emitted from the polarizer and the angle of incidence (0 °, 10 °, 20 °, 30 °, 40 °, and 50 °) in the same manner. The results are shown in FIG. 12.

[Example 13]

Regarding the refractive index n and the extinction coefficient k of the polarizing material, the refractive index n at a wavelength of 250 nm is set to 2.29, the extinction coefficient k is set to 3.24, and the thickness of the thin line is set to Except for 100 nm, the polarization axis rotation amount and incident angle (0 °, 10 °, 20 °, 30 °, 40 °, and 50 °) of the polarized light emitted from the polarizer were calculated in the same manner as in Example 11. Relationship. The results are shown in FIG. 12.

It can be confirmed from FIG. 12 that even if the polarizing material is a molybdenum silicide-based material, the degree of influence on the rotation amount of the polarizing axis, that is, the axis shift is different due to the refractive index and the extinction coefficient.

It can be confirmed that if the refractive index n is set to 2.66 and the extinction coefficient k is set to 1.94, the axis of polarization axis will be shifted relatively little with respect to incident light having a wide range of incident angles.

[Example 14]

A synthetic quartz glass with a thickness of 6.35 mm was prepared as a transparent substrate, and a mixed target of molybdenum and silicon (Mo: Si = 1mol%: 2mol%) was used, and reactive sputtering was performed in a mixed gas environment of argon, nitrogen, and oxygen. Method to form a molybdenum silicide-based material film. Compared with the film formation of the film of Example 8, nitrogen was added to adjust the refractive index, and a little oxygen was introduced to adjust the extinction coefficient. The film thickness was set to 100 nm.

Furthermore, a 7 nm chromium oxynitride film was formed on the molybdenum silicide-based material film as a hard mask by a sputtering method.

Thereafter, in the same manner as in Example 8, a polarizer was obtained by performing etching.

The width, thickness, and pitch of the thin lines of the obtained polarizer were 36 nm, 100 nm, and 100 nm, respectively.

(Structure Evaluation of Thin Line)

For the thin lines of the polarizer of Example 14, the structure was evaluated using a transmission-type ellipsometer (VUV-VASE manufactured by Woollam).

As a result, it was confirmed that the thin line had a width and a thickness of 31.8 nm and 95.8, respectively. The thickness of the molybdenum silicide-based material layer including the molybdenum silicide-based material at nm and the thickness of the surface film and the side of the above-mentioned molybdenum silicide-based material layer are 4.2 nm and 4.2 nm, respectively, including the oxide film containing silicon oxide.

The refractive index and extinction coefficient of the molybdenum silicide-based material layer, that is, the refractive index n of the molybdenum silicide-based material (Mo: Si = 1mol%: 2mol%) at a wavelength of 250 nm are 2.66, and the extinction coefficient k is 1.94.

(Measurement of P-wave transmittance and S-wave transmittance)

The P-wave transmittance and S-wave transmittance were measured in the same manner as in Example 8 to calculate the extinction ratio. The results are shown in Table 13 and FIG. 13.

As shown in Table 13 and FIG. 13, the P-wave transmittance of the polarizer is 48% or more and the extinction ratio is 40 or more in the range of 200 nm to 350 nm. Among them, in the range of 240 nm to 300 nm, the P-wave transmittance of the polarizer is 61% or more, and the extinction ratio is 142 or more. Especially in the range of 240nm ~ 280nm, the P wave transmittance of the polarizer is 61% or more, and the extinction ratio is 220 or more.

It can be confirmed that the polarizer of this embodiment can be particularly suitably used as a material for a light alignment film having an alignment at a wavelength of about 260 nm.

Claims (5)

A polarizer is characterized by having a plurality of thin lines arranged in a straight line. The thin lines have a polarizing material layer containing a polarizing material, and the extinction ratio of light having a wavelength of 250 nm is 40 or more. The polarizing material is a molybdenum silicide-based material. . The polarizer according to claim 1, wherein the polarizer is used for imparting an alignment restricting force to the light alignment film, and is a linearly polarized light for generating light with a wavelength in the ultraviolet region. For example, the polarizer of claim 1 or 2, wherein the film thickness of the polarizing material layer is 40 nm or more, and the distance between the polarizing material layers is 150 nm or less. A light alignment device, which polarizes ultraviolet light and irradiates the light alignment film, is characterized in that it includes a polarizer according to any one of claims 1 to 3, and irradiates the light polarized by the polarizer to the above. Photo-alignment film. For example, the optical alignment device of claim 4, further comprising a mechanism for moving the optical alignment film, including a plurality of directions in a direction in which the optical alignment film moves and a direction orthogonal to the direction in which the optical alignment film moves. In the above-mentioned polarizer, the interface between the plurality of polarizers is arranged so as to be discontinuously connected to the moving direction of the light alignment film, and the interface is in the direction of movement with the light alignment film. Between the plurality of polarizers adjacent to each other in the orthogonal direction.