JP6628121B2 - Polarizer manufacturing method and electron beam irradiation apparatus - Google Patents

Description

  The present invention relates to a polarizer, a method for manufacturing the polarizer, and an electron beam irradiation device.

  A polarizer is a member designed to selectively pass only light having a polarization plane in a certain direction. As a conventional polarizer, there is a polarizing film obtained by stretching a resin film.

  On the other hand, a wire grid polarizer in which metal wirings and spaces are alternately arranged has been proposed. A wire grid polarizer transmits linearly polarized light by transmitting polarized light having an electric vector oscillating perpendicular to the metal wiring and reflecting or absorbing polarized light having an electric vector oscillating parallel to the metal wiring. I have. Such a wire grid type polarizer is manufactured by various manufacturing methods such as a lithography method, a two-beam interference method, and an imprint method using a master plate having irregularities. However, at present, where finer wiring is required, a master plate having irregularities is manufactured by an electron beam lithography apparatus.

  This electron beam drawing apparatus has a first aperture having a rectangular opening, and forms a rectangular beam by passing an electron beam (electron beam) in a wider range than the opening irradiated from the electron gun. Further, a second aperture having a rectangular opening is provided below the first aperture, and the first aperture and the second aperture are arbitrarily overlapped to form a rectangular electron beam whose size is freely adjusted. . The electron beam whose size has been adjusted passes through a reduction lens, a deflection lens, and an objective lens, and performs drawing of a predetermined beam size at a predetermined position of a resist provided on a target substrate.

  When drawing the substrate of the wire grid type polarizer, the electron beam is formed into a thin line of the polarizer or a rectangle having a space size. Thereafter, the rectangle is deflected in one direction by a deflection lens, and an electron beam is irradiated for each shot to form a long pattern. In the other direction, after the deflection by the pitch, the deflection is similarly performed in one direction. This operation is performed within the operating range of the deflecting lens. After drawing in the operating range of the deflecting lens is completed, the stage is moved at appropriate times and the same operation is performed at the next position to draw on the entire substrate of the wire grid polarizer.

  In the above-described electron beam drawing method, since only one rectangular shape can be drawn for one shot, it takes a long time to manufacture a wire grid polarizer having rectangular shapes arranged in multiple stages and multiple rows, ineffective.

  In such a case, drawing may be performed by collectively irradiating an electron beam, but a defect may occur due to a periodic position change for each shot.

JP-A-62-260322

  The present invention has been made in view of such a point, and an object of the present invention is to provide a polarizer capable of manufacturing a highly accurate polarizer in a short time, a manufacturing method thereof, and an electron beam irradiation apparatus. I do.

  The present invention is a method for manufacturing a polarizer having a transparent substrate and a plurality of fine wires provided in parallel with each other on the transparent substrate, wherein a step of preparing a laminate having the transparent substrate and a material layer for fine wires, Forming a resist layer on the laminate, irradiating the resist layer with an electron beam for exposure, developing, and forming a pattern on the resist layer; and Etching the laminated body, wherein the step of irradiating the electron beam includes the step of passing the electron beam through a first aperture having a rectangular opening, and the step of irradiating the plurality of electron beams through the first aperture. Passing through a second aperture having a linear opening, and irradiating the resist layer with a linear electron beam having passed through the second aperture while irradiating the resist layer with each shot. Forming a rectangular unit region including a linear electron beam, and polarizing the linear electron beam to form the unit regions in multiple rows and multiple stages. Is the way.

  The present invention is characterized in that the unit regions are formed in multiple rows along a direction orthogonal to one side of the unit region and in multiple stages along a direction parallel to one side of the unit region, and a boundary between adjacent unit regions of each stage. Is a method for manufacturing a polarizer, which is different from an adjacent step.

  The present invention is a method for manufacturing a polarizer, wherein boundaries between adjacent unit regions of each step are different from each other with regularity between adjacent steps.

  The present invention is a method for manufacturing a polarizer, wherein boundaries between adjacent unit regions of each step are different from each other in an irregular state between adjacent steps.

  The present invention is a method for manufacturing a polarizer, wherein the number of linear electron beams passing through the second aperture is changed for each shot, and a unit region is formed by a plurality of linear electron beams. .

  The present invention is the method of manufacturing a polarizer, wherein the unit regions are formed in multiple rows and multiple stages along a direction inclined with respect to one side of the unit region.

  The present invention is characterized in that unit thin line regions including a plurality of thin lines are formed corresponding to the unit regions of the resist layer, and thin lines between unit thin line regions adjacent to each other in a direction parallel to the thin lines are continuous. This is a method for producing a polarizer.

  The present invention relates to an electron beam irradiation apparatus for producing a polarizer having a transparent substrate and a plurality of thin wires provided in parallel with each other on the transparent substrate, an electron gun for generating an electron beam, and an electron beam from an electron beam source. A first aperture having a rectangular opening for passing a line, a second aperture having a plurality of linear openings for passing an electron beam passing through the first aperture, and a linear electron beam passing through the second aperture Forming a unit region including a plurality of linear electron beams irradiated on the resist layer while irradiating the resist layer on a shot-by-shot basis, and polarizing the linear electron beam to form the unit regions in multiple rows. And a deflecting means formed in multiple stages.

  The present invention relates to a polarizer including a transparent substrate and a plurality of fine lines provided on the transparent substrate in parallel with each other, wherein the fine lines convert a linear electron beam passing through an aperture having a plurality of linear openings into a transparent substrate. A thin line gap in a unit thin line region obtained by forming a unit region including a plurality of electron beams while irradiating the resist layer provided in the upper thin line material layer for each shot, and corresponding to the unit region Is a polarizer characterized by having a width different from that of a boundary between adjacent unit thin line regions.

  As described above, according to the present invention, a polarizer can be manufactured accurately and in a short time.

FIG. 1 is a view schematically showing an electron beam irradiation method used in a method for manufacturing a polarizer according to a first embodiment of the present invention. FIG. 2 is a diagram showing a unit region of an electron beam formed on a resist layer. FIG. 3 is a diagram showing an electron beam irradiation apparatus used in the method for manufacturing a polarizer. FIG. 4A is a plan view illustrating an example of a polarizer, and FIG. 4B is a cross-sectional view taken along line AA of FIG. 4A. 5 (a), 5 (b), 5 (c) and 5 (d) are views showing a method for manufacturing a polarizer. 6 (e), (f), (g), and (h) are views showing a method for manufacturing a polarizer. FIG. 7 is a diagram showing a unit region of an electron beam according to the second embodiment of the present invention. FIG. 8 is a diagram showing a unit region of an electron beam according to a third embodiment of the present invention. FIG. 9 is a diagram showing a unit area of an electron beam according to a fourth embodiment of the present invention. FIG. 10 is a diagram showing a unit region of an electron beam according to a fifth embodiment of the present invention.

<First embodiment>
Hereinafter, a polarizer according to a first embodiment of the present invention, a method for manufacturing the polarizer, and a device for manufacturing the polarizer will be described.

<Polarizer>
First, the polarizer according to the present invention will be described.

  The polarizer according to the present invention is a polarizer in which a plurality of thin wires are arranged in parallel on a transparent substrate having transparency, and the ultraviolet light is emitted outside a polarization region in which the thin wires are arranged. A light shielding film for shielding light is formed.

  4A and 4B are diagrams showing an example of the polarizer according to the present invention. FIG. 4A is a schematic plan view, and FIG. 4B is a cross-sectional view taken along line AA in FIG.

  As shown in FIGS. 4A and 4B, the polarizer 10 has a transparent substrate 1 and a plurality of fine wires 2 provided on the transparent substrate 1 in parallel with each other. The plurality of fine lines 2 constitute a polarization region 3, and a light-shielding film 4 is formed on the outer periphery of the polarization region 3.

  With such a configuration, the polarizer 10 can sandwich the region where the light shielding film 4 is formed.

  That is, in the polarizer 10, the polarizer 10 can be fixed to the photo-alignment device without pinching the region where the thin line 2 is formed (the polarizing region 3). Can be solved, and the problem that foreign matter is generated from the damaged thin line portion can be solved.

  Further, as described above, since the light-shielding film 4 is formed on the outer periphery of the polarization region 3 where the fine wires 2 are arranged, the polarizer 10 receives incident light, particularly, from the region outside the polarization region 3. The transmission of the S-wave component of the incident light can be suppressed, and the problem that the extinction ratio is greatly reduced can be suppressed.

  Hereinafter, each configuration of the polarizer according to the present invention will be described in detail.

(Transparent substrate)
The transparent substrate 1 is not particularly limited as long as it can stably support the fine wire 2, has excellent ultraviolet light transmittance, and can be less deteriorated by exposure light. Not something. For example, optically polished synthetic quartz glass, fluorite, calcium fluoride, and the like can be used, and among them, synthetic quartz glass can be preferably used. This is because the quality is stable and the deterioration is small even when short-wavelength light, that is, high-energy exposure light is used.

  The thickness of the transparent substrate 1 can be appropriately selected according to the use and size of the polarizer 10.

(Thin line)
The thin line 2 has a function of efficiently transmitting the P-wave component of the incident light in the polarizer 10 and suppressing the transmittance of the S-wave component of the incident light to be low. Formed and arranged in parallel.

  The material constituting the fine wire 2 is not particularly limited as long as a desired extinction ratio and P-wave transmittance can be obtained. For example, aluminum, titanium, molybdenum, silicon, chromium, tantalum, ruthenium Containing metals and alloys such as niobium, hafnium, nickel, gold, silver, platinum, palladium, rhodium, cobalt, manganese, iron, indium, and any of these oxides, nitrides, or oxynitrides Materials can be mentioned. Above all, it is preferable to be made of a material containing molybdenum silicide.

  This is because the extinction ratio and the P-wave transmittance can be excellent even at a short wavelength in the ultraviolet region, and the heat resistance and the light resistance are also excellent.

  Examples of the material containing molybdenum silicide include molybdenum silicide (MoSi), molybdenum silicide oxide (MoSiO), molybdenum silicide nitride (MoSiN), and molybdenum silicide oxynitride (MoSiON).

  Note that the thin wire 2 may be made of a plurality of types of materials, or may be made of a plurality of layers made of different materials.

  The thickness of the fine wire 2 is not particularly limited as long as the desired extinction ratio and P-wave transmittance can be obtained. For example, the thickness is preferably 60 nm or more, and particularly preferably 60 nm to 160 nm. It is preferably within the range, particularly preferably within the range of 80 nm to 140 nm. The reason for this is that the extinction ratio and the P-wave transmittance can be improved by being within the above ranges.

  The thickness of the thin line refers to the maximum thickness in a direction perpendicular to the longitudinal direction and the width direction of the thin line in a cross-sectional view. It refers to the thickness including the layer.

  In addition, the thickness of the fine wires may include those having different thicknesses in one polarizer, but are usually formed with the same thickness.

  The number and length of the fine wires 2 are not particularly limited as long as they can obtain a desired extinction ratio and P-wave transmittance, and are appropriately set according to the use of the polarizer 10 and the like. It is.

  The pitch of the fine lines 2 (P1 shown in FIG. 4A) is not particularly limited as long as a desired extinction ratio and P-wave transmittance can be obtained. The wavelength may vary depending on the wavelength of the film, but may be, for example, in the range of 60 nm to 140 nm, preferably in the range of 80 nm to 120 nm, and more preferably in the range of 90 nm to 110 nm. It is preferable that This is because the pitch can make the extinction ratio and the P-wave transmittance excellent.

  Note that the pitch of the fine lines refers to the maximum pitch between adjacent fine lines in the width direction, and when the fine lines are composed of a plurality of layers, refers to the pitch including all the layers.

  Further, the pitch of the fine wires may include those having different pitches in one polarizer, but are usually formed at the same pitch.

  The duty ratio of the fine line, that is, the ratio of the width to the pitch of the fine line (width / pitch) is not particularly limited as long as a desired extinction ratio and P-wave transmittance can be obtained. For example, it can be in the range of 0.3 to 0.6, and preferably in the range of 0.35 to 0.45. With the duty ratio, a polarizer having an excellent extinction ratio can be obtained while maintaining a high P-wave transmittance, and fine wire processing can be further facilitated.

  In addition, the width of the thin line refers to the length in the direction perpendicular to the longitudinal direction of the thin line in a plan view, and when the thin line includes a plurality of layers, refers to the width including all the layers. is there.

  In addition, the widths of the fine lines may include those having different widths in one polarizer, but are usually formed in the same width.

(Polarization area)
The polarizing region 3 is a region where a large number of fine lines are arranged, and is surrounded by the light shielding film 4 in the polarizer 10 shown in FIGS. The region defined by the light-shielding film 4 is a region through which incident light is transmitted. In the polarizer 10 shown in FIGS. 4A and 4B, the region through which incident light is transmitted and the polarization region 3 are viewed in plan. Match.

  In the present invention, the region through which the incident light is transmitted can be a region larger than the polarization region 3. More specifically, the thin wire 2 may not be connected to the light shielding film 4 in the longitudinal direction (the Y direction shown in FIG. 4A).

Further, in the arrangement direction of the fine wires 2 (in a direction perpendicular to the longitudinal direction of the fine wires 2 in plan view, ie, the X direction shown in FIG. 4A), the distance between the terminal fine wires 2 and the light shielding film 4 is as follows. The size may be larger than the distance between the thin wires 2. More specifically, in FIGS. 4A and 4B, the distance P2 between the left edge of the thin line 2 at the right end and the inner edge of the light shielding film 4 in FIG.
The size may be larger than the pitch P1 between the thin wires 2.
However, in order to obtain a high extinction ratio, it is preferable that the thin wire 2 is connected to the light-shielding film 4 in the longitudinal direction as in the polarizer 10 shown in FIGS. . A region where the thin line 2 does not exist outside the polarization region 3, that is, a region where the incident light is transmitted but not polarized can be made smaller, and the transmission of the S-wave component of the incident light can be further suppressed. Because.

  In addition, it is preferable that the distance between the terminal fine line 2 and the light shielding film 4 in the arrangement direction of the fine lines 2 is the same as the distance between the fine lines 2.

  More specifically, in FIGS. 4A and 4B, the distance P2 between the left edge of the fine line 2 at the right end and the inner edge of the light-shielding film 4 is the same as the pitch P1 between the fine lines 2. Preferably, it is a size. Similarly, in FIGS. 4A and 4B, the distance between the right edge of the thin line 2 at the left end in the figure and the inner edge of the light shielding film 4 is the same as the distance P1 between the fine lines 2. It is preferable that This is because a higher extinction ratio can be obtained.

  In the present invention, for example, by making the process of forming the fine wire 2 and the process of forming the light-shielding film 4 the same process, the positional relationship between the light-shielding film 4 and the fine wire 2 can be accurately produced, and the edge of the light-shielding film 4 can be formed. The direction and the direction of the fine wire 2 can be manufactured with high precision in parallel or perpendicularly.

  In addition, as described above, if the thin wire 2 is connected to the light-shielding film 4, heat accumulated in the thin wire 2 due to the light irradiated to the polarizer can be dispersed in the light-shielding film 4, and the light can be prevented from being charged. An effect can also be achieved.

  In the case where the thin wire 2 is connected to the light shielding film 4, a thin resist pattern (thin line pattern) for forming the thin wire 2 is formed in the manufacturing process of the polarizer 10. It can be connected to a large-area resist pattern (light-shielding film pattern), and suppresses a problem that a thin resist pattern (fine line pattern) for forming the fine line 2 collapses or peels off in a manufacturing process. You can also.

(Light shielding film)
The light-shielding film 4 is formed outside the polarization region 3 and suppresses transmission of incident light, particularly the S-wave component of the incident light.

  In the present invention, the light-shielding film 4 preferably has a light-shielding property having an optical density of 2.8 or more with respect to ultraviolet light having a wavelength of 240 nm or more and 380 nm or less.

  This is because the light-shielding film 4 has a high light-shielding property in a wavelength range of ultraviolet light that is applied to impart an alignment regulating force to the photo-alignment film, whereby a polarizer with an excellent extinction ratio can be provided. .

  The material constituting the light-shielding film 4 is not particularly limited as long as a desired optical density can be obtained. For example, aluminum, titanium, molybdenum, silicon, chromium, tantalum, ruthenium, niobium, hafnium, Metals and alloys such as nickel, gold, silver, platinum, palladium, rhodium, cobalt, manganese, iron and indium, and materials containing any of these oxides, nitrides, or oxynitrides it can. Among them, a material containing molybdenum silicide can be preferably mentioned.

  When the material constituting the light-shielding film 4 is made of a material containing molybdenum silicide, if the thickness of the light-shielding film 4 is 60 nm or more, the optical density is 2 with respect to ultraviolet light having a wavelength of 240 nm or more and 380 nm or less. This is because it can have a light shielding property of .8 or more.

  The light-shielding film 4 may be made of a plurality of types of materials, or may be made of a plurality of layers made of different materials.

  Further, the material forming the light shielding film 4 preferably contains the material forming the fine wire 2.

  When the material forming the light-shielding film 4 contains the material forming the fine wire 2, the apparatus and material used in the process of forming the fine wire 2 can be used in the process of forming the light-shielding film 4, and the manufacturing cost can be reduced. This is because of the reduction of Further, by making the process of forming the fine wire 2 and the process of forming the light shielding film 4 the same process, the relative positional accuracy between the fine wire 2 and the light shielding film 4 can be improved.

  Furthermore, when the material forming the light-shielding film 4 and the material forming the fine wire 2 are both made of a material containing molybdenum silicide, the light-shielding film 4 has high light-shielding properties, A polarizer having excellent P-wave transmittance can be obtained.

<Method for producing polarizer>
Next, a method for producing a polarizer according to the present invention will be described.

  The method for producing a polarizer according to the present invention is a method for producing a polarizer having a plurality of fine wires and a light-shielding film that shields ultraviolet light, on a transparent substrate having transparency. Preparing a laminate having a fine wire material layer formed thereon, forming a resist layer on the fine wire material layer, forming a resist pattern having a fine wire pattern and a light-shielding film pattern, Etching the laminate using a resist pattern as an etching mask.

  In the present invention, a resist pattern having a fine line pattern and a light-shielding film pattern is formed and etched, and the process of forming the fine line 2 and the process of forming the light-shielding film 4 are made the same, thereby shortening the manufacturing process. And the relative positional accuracy between the fine wire 2 and the light shielding film 4 can be improved.

  Further, by forming the fine wire 2 and the light shielding film 4 from the same material, the manufacturing cost can be reduced.

  5 and 6 are schematic process diagrams illustrating an example of the method for producing a polarizer according to the present invention.

  For example, in order to manufacture the polarizer 10 using the method for manufacturing a polarizer according to the present invention, first, as shown in FIG. 5A, a thin wire 2 and a light shielding film 4 are formed on a transparent substrate 1. A laminated body 1A is prepared in which a polarizing material layer (fine wire material layer) 31 made of a material to be formed and a hard mask material layer 32 acting as a hard mask when etching the polarizing material layer 31 are sequentially formed.

  Next, a resist layer 33 is formed on the laminated body 1A by a resist film forming apparatus (FIG. 5B), and is irradiated with an electron beam 40 by an electron beam irradiation apparatus (FIG. 5C), and is applied to the developing apparatus Then, a resist pattern 34 having a fine line pattern 34a and a light shielding film pattern 34b is formed (FIG. 5D).

  In the present invention, as described later, for example, using an electron beam lithography apparatus used for manufacturing a photomask for semiconductor lithography, a fine line pattern 34a, a light-shielding film pattern 34b, and the above-described alignment marks are formed in the same step. This makes it possible to control their relative positions under high-accuracy position accuracy control of the electron beam lithography apparatus.

  Next, in the etching apparatus, the hard mask material layer 32 is etched using the resist pattern 34 as an etching mask to form a hard mask pattern 32P (FIG. 6E). For example, when chromium is used as the material of the hard mask material layer 32, the hard mask pattern 32P can be formed by dry etching using a mixed gas of chlorine and oxygen.

  Next, in the etching apparatus, the polarizing material layer 31 is etched using the resist pattern 34 and the hard mask pattern 32P as an etching mask to form the polarizing material pattern 31P having the fine wire 2 and the light shielding film 4 (FIG. 6). (F)). For example, when molybdenum silicide is used as the material of the polarizing material layer 31, the polarizing material pattern 31P can be formed by dry etching using SF6 gas.

  Next, in the peeling device, the resist pattern 34 is removed (FIG. 6G), then, the hard mask pattern 32P is removed, and the transparent substrate 1 has a plurality of fine wires 2 and a light shielding film 4. The polarizer 10 is obtained (FIG. 6 (h)).

  Although omitted in the examples shown in FIGS. 5 and 6, in the present invention, a plurality of fine wires 2 and a light-shielding film 4 are formed on a large-area transparent substrate 1, and then the fine wires 2 are arranged. The outside of the polarized region 3 may be cut to obtain the polarizer 10 cut into a desired size and shape.

  In the above description, the polarization material layer 31 is etched while the resist pattern 34 is left. However, in the present invention, after the step of forming the hard mask pattern 32P shown in FIG. The pattern 34 may be removed, and the polarizing material layer 31 may be etched using only the hard mask pattern 32P as an etching mask to form the polarizing material pattern 31P.

  Further, in the above description, the form in which the hard mask pattern 32P is removed has been described as the obtained polarizer 10, but in the present invention, the hard mask pattern 32P may be left entirely or partially as needed. good.

  For example, a form in which the hard mask pattern 32P is left on the entire surface as in the form shown in FIG. 6G may be used as the form of the finally obtained polarizer. In this case, the step of removing the hard mask pattern 32P can be omitted, and the effect of shortening the step can be obtained.

  In the above description, the embodiment in which the hard mask material layer 32 is provided on the polarizing material layer 31 has been described. However, in the present invention, the resist layer is provided on the polarizing material layer 31 without providing the hard mask material layer 32. 33, the polarizing material layer 31 may be etched using the resist pattern 34 as an etching mask to form a polarizing material pattern 31P having the fine wire 2 and the light shielding film 4.

<Electron beam irradiation method>
Here, the method used for forming the resist pattern 34 shown in FIG. 5C should be used as long as the method can form the resist pattern 34 having the desired fine line pattern 34a and light shielding film pattern 34b. Among them, a method of irradiating an electron beam is preferable.

  The formation of a resist pattern by a method of irradiating an electron beam has a track record in the production of photomasks for semiconductors and the like. For example, a fine line pattern having a pitch of 60 nm or more and 140 nm or less can be accurately formed in a desired region. Because. Further, the relative positional accuracy between the fine line pattern 34a and the light-shielding film pattern 34b can be set to the nanometer level required for manufacturing a semiconductor photomask.

  Further, in the present invention, the resist layer 33 is made of a positive type electron beam resist, and the step of forming the resist pattern 34 having the fine line pattern 34a and the light shielding film pattern 34b includes the step of forming the desired fine line and the desired light shielding. Preferably, the process is a process of irradiating the resist layer 33 other than the position where the film is formed with an electron beam.

  More specifically, it is preferable that the fine line pattern 34a constitutes a line-and-space pattern, and the electron beam is irradiated onto the resist layer 33 at a position to be a space pattern portion of the line-and-space pattern.

  This is because the method of irradiating the above position with the electron beam can reduce the area to be irradiated with the electron beam and shorten the time of the electron beam irradiation step.

  The above will be described in more detail.

  For example, when the width of the thin line 2 of the polarizer 10 shown in FIGS. 4A and 4B is half the pitch of the thin line 2, the thin line of the polarizer 10 is formed using a negative electron beam resist. When the pattern and the light-shielding film pattern are to be obtained, the area to be irradiated with the electron beam is the area obtained by adding the area of the light-shielding film 4 to the area of all the fine wires 2.

  On the other hand, when a positive-type electron beam resist is used, the area to be irradiated with the electron beam is an area in which all of the space portions of the fine lines 2 are combined, that is, an area in which all of the fine lines 2 are combined. The time when irradiating the area can be reduced.

  Next, the electron beam irradiation method will be further described with reference to FIGS. As shown in FIGS. 1 to 3, an electron beam irradiation method using an electron beam irradiation apparatus is used to form a resist pattern 34 having a fine line pattern 34a and a light shielding film pattern 34b on a resist layer 33.

  As shown in FIGS. 1 to 3, such an electron beam irradiation apparatus 11 has an electron gun 12 for generating an electron beam 40 and a rectangular opening 13 a for passing the electron beam 40 generated from the electron gun 12. A first aperture 13, a first deflector 14 for deflecting the electron beam 40 passing through the first aperture 13, and a plurality of linear openings 15 a for passing the electron beam 40 deflected by the first deflector 14. The second deflection that deflects the electron beam 40 that has passed through the second aperture 15 and the second aperture 15 and irradiates the deflected electron beam 40 to the resist layer 33 provided on the polarizing material layer 31 of the laminate 1A described above. And a vessel 16.

  The first aperture 13 has a single rectangular opening 13a, and the second aperture 15 has a plurality of linear openings 15a and a linear mask 15b between the linear openings 15a.

  Generally, the energy of the electron beam 40 generated from the electron gun 12 is large near the center and small near the periphery.

  Therefore, when the electron beam 40 generated from the electron gun 12 passes through the first aperture 13 having the rectangular opening 13a, only the electron beam 40 near the center having a large energy among the electron beams 40 can be used. Can be.

  Next, the electron beam 40 passing through the first aperture 13 passes through the second aperture 15 having the plurality of linear openings 15a, so that the plurality of linear electron beams 40a can be obtained by the second aperture 15. The resist layer 33 provided on the laminate 1A can be irradiated with the linear electron beam 40a obtained as described above.

  Next, an electron beam irradiation method using the electron beam irradiation apparatus 11 having such a configuration will be described.

  As shown in FIGS. 1 to 3, the electron beam 40 generated from the electron gun 12 passes through the rectangular opening 13 a of the first aperture 13, and only the electron beam 40 of the electron beam 40 near the center having a large energy is used. Is selected.

  Next, the electron beam 40 that has passed through the first aperture 13 is deflected by the first deflector 14 and enters the second aperture 15. Next, the electron beam 40 passes through the linear opening 15a of the second aperture 15 to form a plurality of linear electron beams 40a. Next, the linear electron beam 40a is deflected through the second deflector 16, and is irradiated on the resist layer 33 provided on the stacked body 1A.

  At this time, the linear electron beam 40a is irradiated on the resist layer 33 for each shot, and the linear electron beam 40a irradiated on each shot includes a predetermined number of linear electron beams 40a on the resist layer 33. A rectangular electron beam unit area 40A is formed (see FIG. 2).

  In this case, the linear electron beam 40a included in the unit region 40A of the electron beam corresponds to the thin line 2 or the space between the thin lines 2 depending on the type of the electron resist of the resist layer 33.

  In FIG. 2, the linear electron beam 40 a included in the unit region 40 of the electron beam formed on the resist layer 33 is shown corresponding to the thin line 2 of the polarizer 10.

  The unit region 40A of the electron beam corresponds to the unit thin line region 2A including the plurality of thin lines 2 of the polarizer 10.

  By the way, the linear electron beam 40a formed by the linear opening 15a of the second aperture 15 is irradiated on the resist layer 33 every shot to form a unit region 40A of the electron beam. In this case, by deflecting the linear electron beam 40a by the second deflector 16 each time the linear electron beam 40a is irradiated, the unit region 40A is formed on the resist layer 33 along the lateral direction of FIG. It can be provided in multiple rows (in a direction perpendicular to the electron beam 40a), and can be provided in multiple stages along the vertical direction in FIG. 2 (parallel to the linear electron beam 40a). In this case, the unit areas 40A may be arranged in multiple rows in a direction orthogonal to one side 40b of the unit area 40A, for example, a left side or a right side, and in multiple stages in a direction parallel to the left side or the right side.

  As shown in FIG. 2, an electron beam unit area 40A is formed in a rectangular shape for each shot, and each unit area 40A is partitioned by a virtual vertical line 40V and a horizontal line 40H. Are arranged in a grid pattern in multiple stages and multiple rows.

  Each thin line 2 of the polarizer 10 is formed by the linear electron beam 40A as described above, and a unit thin line region 2A including a plurality of thin lines 2 is formed corresponding to the unit region 40A. In this case, the thin lines 2 between the unit thin line regions 2A adjacent to each other in the direction parallel to the thin lines 2 (vertical direction in FIG. 2) form a single thin line 2 extending in the vertical direction.

  As described above, according to the present embodiment, the electron beam 40 passing through the first aperture 13 passes through the second aperture 15 having the plurality of linear openings 15a, thereby generating a linear electron beam 40a. The electron beam 40a is irradiated on the resist layer 33 on the laminate 1A for each shot to form an electron beam unit region 40A including a plurality of linear electron beams 40a, and the second deflector 16 uses the linear electron beam. By deflecting 40a, unit regions 40A were formed in multiple rows and multiple stages. This makes it possible to significantly reduce the manufacturing time of the polarizer 10 as compared with a case where a single rectangular linear electron beam is irradiated onto the resist layer and the single linear electron beam is deflected. it can.

<Second embodiment>
Next, a second embodiment of the present invention will be described with reference to FIG.

  In the first embodiment shown in FIGS. 1 to 6, the resist layer 33 provided on the stacked body 1A is partitioned by a vertical line 40V and a horizontal line 40H and includes a plurality of linear electron beams 40a. The example in which the rectangular unit area 40A of the electron beam is formed and the unit areas 40A are arranged in multiple rows and multiple stages has been described. However, the present invention is not limited to this. You may change mutually between adjacent steps.

  In the first embodiment shown in FIGS. 1 to 6, the unit area 40A of the rectangular electron beam is partitioned by the vertical line 40V and the horizontal line 40H, so that the space between adjacent unit areas 40A of each stage is provided. Is coincident with the vertical line 40V.

  On the other hand, as shown in FIG. 7, even if the position of the boundary 40B of the unit area 40A adjacent to each stage is gradually shifted to the right according to the first stage, the second stage, the third stage,. Good.

  In FIG. 7, the position of the boundary 40B between adjacent unit areas 40A of each stage is gradually shifted between adjacent stages, that is, vertically adjacent stages.

  As described above, since the unit region 40A is composed of the plurality of linear electron beams 40a irradiated on the resist layer 33 for each shot, the interval between the linear electron beams 40a in the unit region 40A is basically constant. .

  On the other hand, the interval between the linear electron beams 40a at the boundary 40B of the unit region 40A may be different between shots of the linear electron beam 40a, and the width of the boundary 40B between the unit regions 40A is within the unit region 40A. The distance between the linear electron beams 40a may slightly change, for example, increase.

  In such a case, the boundary 40B between the unit regions 40A corresponds to the space 2B between the thin lines 2, and when the boundaries 40B are linearly arranged in the vertical direction in FIG. 7, the thin line of the obtained polarizer 10 is obtained. A linear wide space 2B extending in the vertical direction is formed between the two due to the boundary 40B of the unit region 40A, and the wide space 2B between the fine wires 2 interferes with the polarizing function of the polarizer 10.

According to the present embodiment, the position of the boundary 40B of the unit region 40A between the adjacent rows of each step can be gradually changed between the adjacent steps, and as a result, the thin line 2 of the polarizer 10 can be changed. It is possible to prevent a linear wide space 2B extending in the vertical direction from being formed therebetween. Further, since the unit regions 40A have the same pattern of the linear electron beams 40a, it is not necessary to change the number of the linear electron beams 40a to be irradiated for each shot, and it is easy to create exposure data.
Here, an example in which the interval between the linear electron beams 40a at the boundary 40B between the adjacent unit regions 40A is larger than the interval between the linear electron beams 40a within the unit region 40A has been described. The present invention is not limited to this, and the interval between the linear electron beams 40a at the boundary 40B may be smaller than the interval between the linear electron beams 40a in the unit region 40A, or may not change. The difference in the distance between the linear electron beams 40a in the unit region 40A and the boundary 40B between the unit regions 40A is due to the difference in the distance between the fine lines 2 in the manufactured polarizer 10 when the appearance inspection is performed. (A connection portion between the unit regions 40) is detected. Therefore, the position of the boundary 40B between the adjacent unit areas 40A can be recognized by an appearance inspection. In the second embodiment, the position of the boundary 40B between adjacent unit areas 40A of each stage is regularly shifted for each of the first, second, third,. When the inspection is performed, regular connection portions between the vertically adjacent steps can be detected.

<Third embodiment>
Next, a third embodiment of the present invention will be described with reference to FIG.

  In the first embodiment shown in FIGS. 1 to 6, the resist layer 33 provided on the stacked body 1A is partitioned by a vertical line 40V and a horizontal line 40H and includes a plurality of linear electron beams 40a. The example in which the rectangular unit area 40A of the electron beam is formed and the unit areas 40A are arranged in multiple rows and multiple stages has been described. However, the present invention is not limited to this. You may change mutually between adjacent steps.

  In the first embodiment shown in FIGS. 1 to 6, the unit area 40A of the rectangular electron beam is partitioned by the vertical line 40V and the horizontal line 40H, so that the space between adjacent unit areas 40A of each stage is provided. Is coincident with the vertical line 40V.

  On the other hand, as shown in FIG. 8, the position of the boundary 40B between adjacent unit areas 40A of each stage is shifted in an irregular state for each of the first, second, third,. Is also good.

  In FIG. 8, the position of the boundary 40B between the adjacent unit areas 40A of each step is shifted irregularly between the adjacent steps, that is, the vertically adjacent steps.

  As described above, since the unit region 40A is composed of the plurality of linear electron beams 40a irradiated on the resist layer 33 for each shot, the interval between the linear electron beams 40a in the unit region 40A is basically constant. .

  On the other hand, the width of the boundary 40B of the unit region 40A may differ between shots of the linear electron beam 40a, and the width of the boundary 40B between the unit regions 40A may be different between the linear electron beams 40a in the unit region 40A. It may vary slightly with spacing, for example, may increase.

  In such a case, the boundary 40B between the unit regions 40A corresponds to the space 2B between the fine lines 2, and when the boundaries 40B are linearly arranged in the vertical direction in FIG. A linear wide space 2B extending in the vertical direction is formed between the boundaries 40B of the unit region 40A, and the wide space 2B between the fine wires 2 interferes with the polarizing function of the polarizer 10.

    According to the present embodiment, the position of the boundary 40B between the adjacent unit regions 40A of each step can be changed to an irregular state between the adjacent steps, and as a result, the thin line 2 of the polarizer 10 can be changed. It is possible to more reliably prevent a linear wide space extending in the vertical direction from being formed therebetween. Here, an example in which the interval between the linear electron beams 40a at the boundary 40B between the adjacent unit regions 40A is larger than the interval between the linear electron beams 40a within the unit region 40A has been described. Similarly to the second embodiment, the interval between the linear electron beams 40a at the boundary 40B may be smaller than the interval between the linear electron beams 40a in the unit region 40A, or may not be changed. Further, in the polarizer 10 formed according to the third embodiment, the position of the boundary 40B between the adjacent unit regions 40A of each step is irregular between the adjacent steps, that is, the steps adjacent in the vertical direction. Since they are shifted, when the appearance inspection is performed, a connection portion between the unit regions 40 can be detected between the adjacent vertically adjacent steps.

<Fourth embodiment>
Next, a fourth embodiment of the present invention will be described with reference to FIG.

  In the first embodiment shown in FIGS. 1 to 6, the resist layer 33 provided on the stacked body 1A is partitioned by a vertical line 40V and a horizontal line 40H and includes a plurality of linear electron beams 40a. A unit area 40A of a rectangular electron beam is formed, and the unit areas 40A are arranged in multiple rows in a direction orthogonal to the left side or the right side of the unit area and in multiple stages in a direction parallel to the left side or the right side of the unit area 40A. However, the present invention is not limited to this, but is not limited to this, and is arranged in multiple rows in a direction having a 45 ° inclination of one side of the unit region 40A, and in multiple stages in a direction having a 45 ° inclination to one side of the unit region 40A. It may be arranged.

  In FIG. 9, a rectangular electron beam unit region 40A is formed by irradiating the resist layer 33 with a plurality of linear electron beams 40a for each shot. The unit area 40A is divided by four sides. In this case, the four sides of the unit area 40 correspond to the cuts 40S for each shot.

  In the embodiment shown in FIG. 2, the unit regions 40A are arranged in multiple rows in a direction orthogonal to one side 40b of the unit region 40A, for example, the left side or the right side, and are arranged in multiple stages in a direction parallel to the left side or the right side. In the embodiment shown in FIG. 9, the unit areas 40A are arranged in multiple rows in a direction inclined by 45 ° with respect to one side of the unit area, for example, one cut 40S, and directions inclined by 45 ° with respect to the cut 40S. Are arranged in multiple stages.

  By arranging the unit areas 40A in multiple rows and in multiple stages in a direction inclined by 45 ° with respect to one side of the unit area 40A, for example, one cut 40S, the cuts 40S defining the unit area 40A are formed as shown in FIG. Does not extend continuously in the vertical direction parallel to the linear electron beam 40a. Therefore, it is possible to reliably prevent a linear wide space extending in the vertical direction from being formed between the thin wires 2 of the polarizer 10 due to the cuts 40S of the unit region 40A.

<Fifth embodiment>
Next, a fifth embodiment of the present invention will be described with reference to FIG.

  In the first embodiment shown in FIGS. 1 to 6, the resist layer 33 provided on the stacked body 1A is irradiated with a plurality of linear electron beams 40a for each shot, thereby forming a plurality of linear electron beams. Although the example in which the unit area 40A of the rectangular electron beam including the 40a is formed and the unit areas 40A are arranged in multiple rows and multiple stages is shown, each shot of the linear electron beam 40a is not limited thereto. The unit area 40A does not necessarily need to correspond.

  As shown in FIG. 10, electron beam unit areas 40A are arranged in multiple rows in the horizontal direction. Although not shown, the unit areas 40A are arranged in multiple stages in the vertical direction.

  In FIG. 10, a plurality of linear electron beams 40a are irradiated on the resist layer 33 to form the electron beam unit area 40A. In this embodiment, one shot of the linear electron beam 40a is a unit. It does not necessarily correspond to the area 40.

  For example, the first shot of the linear electron beam 40a forms a first group 41 of the linear electron beams 40a, and the first group 41 of the linear electron beams 40a forms the first group 41 from the left end in FIG. The entire unit area 40A is obtained.

  Next, by the second shot of the linear electron beam 40a, a second group 42 of the linear electron beams 40a is obtained. Since the second group 42 includes a small number of linear electron beams 40a, it constitutes only a part of the second unit area 40A from the left end in FIG.

  Next, by the third shot of the linear electron beam 40a, a third group 43 of the linear electron beams 40a is obtained. Since the third group 42 also includes a small number of linear electron beams 40a, it constitutes a part of the second unit region 40A from the left end.

  Next, by the fourth shot of the linear electron beam 40a, a fourth group 44 of the linear electron beams 40a is obtained. The fourth group 44 includes a large number of linear electron beams 40a and extends from the second unitary region 40A from the left end to the third unit region 40A.

  Next, the fifth group 45 of the linear electron beams 40a is obtained by the fourth shot of the linear electron beams 40a. The fifth group of linear electron beams 40a includes a medium number of linear electron beams 40a, and fills the rest of the third unit region 40A from the left end.

  When irradiating the linear electron beam 40 a for each shot, the electron beam 40 passing through the first aperture 13 is deflected by using the first deflector 14 and the deflected electron beam 40 is directed to the second aperture 15. The number of linear electron beams 40a for each shot can be adjusted. In this case, the shapes and intervals of the linear electron beams 40a formed for each shot are equal to each other.

As described above, according to the present embodiment, the number of the linear electron beams 40a for each shot is changed, and the unit region 40A is formed by the linear electron beams 40a of a plurality of shots. The gap between the lines 40a can be made less noticeable. In addition, since the fourth group 44 of the linear electron beams 40 is formed across the two adjacent unit regions 40A, the width of the boundary 40B between the two adjacent unit regions 40A is widened, and the width between the thin lines 2 is accordingly increased. Is not excessively expanded.
Also in the fourth and fifth embodiments, the interval between the linear electron beams 40a at the boundary 40B between the adjacent unit regions 40A is larger than the interval between the linear electron beams 40a in the unit region 40A. It is not limited to a wide one, and may be narrow or the same. In addition, the position of the boundary 40B between the adjacent unit regions 40A in each step can be detected as a change in the interval between the fine lines 2 (the joint between the unit regions 40) in the appearance inspection of the manufactured polarizer 10.

REFERENCE SIGNS LIST 1 transparent substrate 1A laminated body 2 thin line 2A unit thin line region 3 polarizing region 4 light shielding film 10 polarizer 11 electron beam irradiation device 12 electron gun 13 first aperture 13a rectangular opening 14 first deflector 15 second aperture 15a linear Aperture 16 Second deflector 40 Electron beam 40a Linear electron beam 40b One side 40A Electron beam unit area 40B Boundary 40H Horizontal line 40S Shot break 40V Vertical line

Claims (6)

In a method for manufacturing a polarizer having a transparent substrate and a plurality of fine lines provided in parallel with each other on the transparent substrate,
A step of preparing a laminate having the transparent substrate and the fine-wire material layer,
Forming a resist layer on the laminate,
A step of irradiating the resist layer with an electron beam, exposing and developing, and forming a pattern on the resist layer,
Etching the laminate through the resist layer,
The step of irradiating the electron beam,
Passing the electron beam through a first aperture having a rectangular opening;
Passing the electron beam passing through the first aperture through a second aperture having a plurality of linear openings;
A rectangular unit area including an exposure pattern formed by a plurality of linear electron beams irradiated on the resist layer while irradiating the resist layer with the linear electron beam passing through the second aperture for each shot And forming the unit regions in multiple rows and multiple stages by deflecting the linear electron beam;
Has,
The unit area is formed in multiple rows along a direction orthogonal to one side of the unit area, and is formed in multiple stages along a direction parallel to one side of the unit area,
The boundaries between adjacent unit areas of each stage are different from each other between adjacent stages,
A method for manufacturing a polarizer, wherein the number of linear electron beams passing through the second aperture is changed for each shot, and a unit region is formed by a plurality of linear electron beams.   2. The method for manufacturing a polarizer according to claim 1, wherein boundaries between adjacent unit regions of each step are different from each other with regularity between adjacent steps.   2. The method for manufacturing a polarizer according to claim 1, wherein boundaries between adjacent unit regions of each step are different from each other in an irregular state between the adjacent steps. In a method for manufacturing a polarizer having a transparent substrate and a plurality of fine lines provided in parallel with each other on the transparent substrate,
A step of preparing a laminate having the transparent substrate and the fine-wire material layer,
Forming a resist layer on the laminate,
A step of irradiating the resist layer with an electron beam, exposing and developing, and forming a pattern on the resist layer,
Etching the laminate through the resist layer,
The step of irradiating the electron beam,
Passing the electron beam through a first aperture having a rectangular opening;
Passing the electron beam passing through the first aperture through a second aperture having a plurality of linear openings;
A rectangular unit area including an exposure pattern formed by a plurality of linear electron beams irradiated on the resist layer while irradiating the resist layer with the linear electron beam passing through the second aperture for each shot And forming the unit regions in multiple rows and multiple stages by deflecting the linear electron beam;
And wherein the unit regions are formed in multiple rows and multiple stages along a direction inclined with respect to one side of the unit region.   2. A unit thin line region including a plurality of thin lines is formed corresponding to the unit region of the resist layer, and thin lines between unit thin line regions adjacent to each other in a direction parallel to the thin lines are continuous. Or the manufacturing method of the polarizer of 4. In an electron beam irradiation apparatus for manufacturing a polarizer having a transparent substrate and a plurality of fine wires provided in parallel with each other on the transparent substrate,
An electron gun for generating an electron beam;
A first aperture having a rectangular opening through which an electron beam from the electron gun passes;
A second aperture having a plurality of linear openings through which the electron beam passing through the first aperture passes;
Forming a unit region including the second exposure pattern formed linear electron beam passing through the aperture at a plurality of linear electron beam irradiated to the resist layer while irradiating every shot against Les resist layer And deflecting means for deflecting the linear electron beam to form the unit regions in multiple rows and multiple stages,
The unit area is formed in multiple rows along a direction orthogonal to one side of the unit area, and is formed in multiple stages along a direction parallel to one side of the unit area,
The boundaries between adjacent unit areas of each stage are different from each other between adjacent stages,
An electron beam irradiation apparatus, wherein the number of linear electron beams passing through the second aperture is changed for each shot, and a unit region is formed by the linear electron beams of a plurality of shots.

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