JP2016133667A - Polarizer, method for manufacturing the same, and electron beam irradiation device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture a polarizer with high accuracy in a short time.SOLUTION: An electron beam 40 is made to pass through a rectangular opening 13a of a first aperture 13 and the electron beam 40 from the first aperture 13 is made to pass through a linear opening 15a of a second aperture 15. A plurality of linear electron beams 40a that has passed through the second aperture 15 is collectively made to irradiate a resist 33 disposed on a laminate 1A to form a pattern in the resist 33. The laminate 1A is etched to obtain a polarizer 10.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a polarizer, a manufacturing method thereof, and an electron beam irradiation apparatus.

  A polarizer is a member designed to selectively pass only light having a polarization plane in a certain direction. As a conventional polarizer, there is a polarizing film obtained by stretching a resin film.

  In contrast, a wire grid polarizer in which metal wirings and spaces are alternately arranged has been proposed. Wire grid polarizers transmit linearly polarized light that has an electric vector that oscillates perpendicular to the metal wiring, and reflect or absorb polarized light that has an electric vector that oscillates parallel to the metal wiring to obtain linearly polarized light. Yes. Such a wire grid type polarizer is manufactured by various manufacturing methods such as a lithography method, a two-beam interference method, and an imprint method using an uneven master plate. However, at present, when miniaturization of wiring is required, a master plate with unevenness is manufactured by an electron beam drawing apparatus.

  This electron beam drawing apparatus has a first aperture having a rectangular opening, and forms a rectangular beam by passing a wide range of electron beams (electron beams) from the opening irradiated from the electron gun. Further, a second aperture having a rectangular opening is provided below the first aperture, and a rectangular electron beam whose size is freely adjusted is formed by arbitrarily overlapping the first aperture and the second aperture. . The electron beam whose size has been adjusted passes through a reduction lens, a deflection lens, and an objective lens, and performs drawing with a predetermined beam size at a predetermined position of a resist provided on a target substrate.

  When drawing a substrate of a wire grid type polarizer, an electron beam is formed into a thin wire of the polarizer or a rectangle having a space size. Thereafter, this rectangle is deflected in one direction by a deflection lens, and an electron beam is irradiated for each shot to form a longitudinal pattern. Regarding the other directions, after deflecting by the pitch, the deflection is similarly performed in one direction. This operation is performed within the operating range of the deflection lens. When drawing in the working range of the deflection lens is completed, the stage is moved in a timely manner and the same operation is performed at the next position, and drawing is performed on the entire substrate of the wire grid polarizer.

  In the electron beam drawing method described above, since only one rectangular shape can be drawn for one shot, when manufacturing a wire grid type polarizer having rectangular shapes arranged in multiple stages and multiple rows, a long time is required. ineffective.

  In such a case, drawing may be performed by irradiating an electron beam all at once, but it is also conceivable that a defect due to periodic position fluctuation occurs for each shot.

JP-A-62-260322

  The present invention has been made in consideration of such points, and an object thereof is to provide a polarizer capable of manufacturing a highly accurate polarizer in a short time, a manufacturing method thereof, and an electron beam irradiation apparatus. To do.

  The present invention provides a method for producing a polarizer having a transparent substrate and a plurality of fine wires provided in parallel to each other on the transparent substrate, and a step of preparing a laminate having the transparent substrate and the fine wire material layer; Forming a resist layer on the laminate, irradiating the resist layer with an electron beam, exposing and developing, forming a pattern on the resist layer, and passing the resist layer through the resist layer; Etching the laminated body, and the step of irradiating the electron beam includes a step of passing the electron beam through a first aperture having a rectangular opening and a plurality of electron beams that have passed through the first aperture. A step of passing a second aperture having a linear opening, and a plurality of irradiations of the resist layer while irradiating the resist layer with a linear electron beam passing through the second aperture for each shot. Forming a rectangular unit region including a linear electron beam, and polarizing the linear electron beam to form the unit region in multiple rows and multiple stages. Is the method.

  In the present invention, the unit areas are formed in multiple rows along a direction orthogonal to one side of the unit area and in multiple stages along a direction parallel to one side of the unit area, and a boundary between adjacent unit areas of each stage Is a method for manufacturing a polarizer, which is different from each other between adjacent stages.

  The present invention is the method of manufacturing a polarizer, wherein a boundary between adjacent unit regions of each stage is different from each other with regularity between the adjacent stages.

  The present invention is a method for manufacturing a polarizer, wherein boundaries between adjacent unit regions of each stage are different from each other in an irregular state between adjacent stages.

  The present invention is a method of manufacturing a polarizer, wherein the number of linear electron beams that have passed through the second aperture is changed for each shot, and the unit region is formed by a plurality of shot linear electron beams. .

  The present invention is the method for manufacturing a polarizer, characterized in that the unit regions are formed in multiple rows and stages along a direction inclined with respect to one side of the unit region.

  The present invention is characterized in that a unit fine line region including a plurality of fine lines is formed corresponding to the unit region of the resist layer, and fine lines between adjacent unit fine line regions are continuous in a direction parallel to the fine lines. This is a method for manufacturing a polarizer.

  The present invention relates to an electron beam irradiation apparatus for manufacturing a polarizer having a transparent substrate and a plurality of thin wires provided in parallel to each other on the transparent substrate, an electron gun for generating an electron beam, and an electron from an electron beam source. A first aperture having a rectangular aperture for passing a line; a second aperture having a plurality of linear apertures for passing an electron beam passing through the first aperture; and a linear electron beam passing through the second aperture Forming a unit region including a plurality of linear electron beams irradiated to the resist layer while irradiating the resist layer for each shot, and polarizing the linear electron beams to form the unit regions in multiple rows And a deflector that is formed in multiple stages.

  The present invention relates to a polarizer comprising a transparent substrate and a plurality of fine lines provided in parallel to each other on the transparent substrate, wherein the fine lines pass a linear electron beam that has passed through an aperture having a plurality of linear openings. It is obtained by forming a unit region containing a plurality of electron beams while irradiating the resist layer provided on the upper thin wire material layer for each shot, and a gap between thin wires in the unit thin wire region corresponding to the unit region. Is a polarizer that is different from the width of the boundary between adjacent unit thin line regions.

  As described above, according to the present invention, a polarizer can be manufactured with high accuracy and in a short time.

FIG. 1 is a diagram showing an outline of an electron beam irradiation method used in the method for manufacturing a polarizer according to the first embodiment of the present invention. FIG. 2 is a view showing a unit region of an electron beam formed in a resist layer. FIG. 3 is a diagram showing an electron beam irradiation apparatus used in a method for manufacturing a polarizer. FIG. 4A is a plan view illustrating an example of a polarizer, and FIG. 4B is a cross-sectional view taken along line AA in FIG. 5A, 5B, 5C, and 5D are views showing a method for manufacturing a polarizer. FIGS. 6E, 6F, 6G, and 6H are views showing a method for manufacturing a polarizer. FIG. 7 is a diagram showing a unit area of an electron beam in the second embodiment of the present invention. FIG. 8 is a diagram showing a unit region of an electron beam in the third embodiment of the present invention. FIG. 9 is a diagram showing a unit region of an electron beam according to the fourth embodiment of the present invention. FIG. 10 is a diagram showing a unit region of an electron beam in the fifth embodiment of the present invention.

<First Embodiment>
Hereinafter, a polarizer, a manufacturing method thereof, and a manufacturing apparatus thereof according to the first embodiment of the present invention will be described.

<Polarizer>
First, the polarizer according to the present invention will be described.

  The polarizer according to the present invention is a polarizer in which a plurality of fine wires are arranged in parallel on a transparent substrate having transparency, and the ultraviolet light is placed outside a polarization region where the fine wires are arranged. A light shielding film for shielding light is formed.

  4A and 4B are diagrams illustrating an example of a polarizer according to the present invention, in which FIG. 4A is a schematic plan view thereof, and FIG. 4B is a cross-sectional view taken along line AA of FIG.

  As shown in FIGS. 4A and 4B, the polarizer 10 includes a transparent substrate 1 and a plurality of fine wires 2 provided on the transparent substrate 1 in parallel with each other. The plurality of thin lines 2 constitute a polarizing region 3, and a light shielding film 4 is formed on the outer periphery of the polarizing region 3.

  Since it has such a structure, in the polarizer 10, the area | region in which the light shielding film 4 is formed can be clamped.

  That is, in the polarizer 10, the polarizer 10 can be fixed to the optical alignment device without sandwiching the region where the thin wire 2 is formed (polarization region 3). It is possible to solve the problem of causing the damage to the chain and the problem that the foreign matter is generated from the broken thin line portion.

  Further, as described above, since the light shielding film 4 is formed on the outer periphery of the polarizing region 3 where the thin wire 2 is disposed, in the polarizer 10, incident light, in particular, from the region outside the polarizing region 3. Transmission of the S wave component of the incident light can be suppressed, and a problem that the extinction ratio is greatly reduced can be suppressed.

  Hereinafter, each structure of the polarizer which concerns on this invention is demonstrated in detail.

(Transparent substrate)
The transparent substrate 1 is not particularly limited as long as it can stably support the thin wires 2 and is excellent in ultraviolet light transmission and can be less deteriorated by exposure light. It is not a thing. For example, optically polished synthetic quartz glass, fluorite, calcium fluoride, and the like can be used. Among them, synthetic quartz glass can be preferably used. This is because the quality is stable and there is little deterioration even when short wavelength light, that is, high energy exposure light is used.

  The thickness of the transparent substrate 1 can be appropriately selected according to the use and size of the polarizer 10.

(Thin line)
The thin wire 2 has an effect of efficiently transmitting the P wave component of the incident light and suppressing the transmittance of the S wave component of the incident light in the polarizer 10. A plurality of the thin wires 2 are linearly formed on the transparent substrate 1. They are formed and arranged in parallel.

  The material constituting the thin wire 2 is not particularly limited as long as a desired extinction ratio and P-wave transmittance can be obtained. For example, aluminum, titanium, molybdenum, silicon, chromium, tantalum, ruthenium , Niobium, Hafnium, Nickel, Gold, Silver, Platinum, Palladium, Rhodium, Cobalt, Manganese, Iron, Indium and other metals and alloys, and oxides, nitrides, or oxynitrides thereof Materials can be mentioned. Among these, it is preferable that the material is made of a material containing molybdenum silicide.

  This is because even at a short wavelength in the ultraviolet region, the extinction ratio and the P-wave transmittance can be excellent, and the heat resistance and light resistance are also excellent.

  Examples of the material containing molybdenum silicide include molybdenum silicide (MoSi), molybdenum silicide oxide (MoSiO), molybdenum silicide nitride (MoSiN), molybdenum silicide oxynitride (MoSiON), and the like.

  In addition, the thin wire | line 2 may be comprised from multiple types of material, and may be comprised from the several layer from which material differs.

  The thickness of the thin wire 2 is not particularly limited as long as a desired extinction ratio and P-wave transmittance can be obtained. For example, the thickness is preferably 60 nm or more, and more preferably 60 nm to 160 nm. It is preferably within the range, and particularly preferably within the range of 80 nm to 140 nm. It is because the extinction ratio and the P wave transmittance can be made excellent by being in the above range.

  Note that the thickness of the thin line refers to the maximum thickness among the thicknesses in the direction perpendicular to the longitudinal direction and the width direction of the thin line in a cross-sectional view. It means the thickness including the layer.

  The thin wires may have different thicknesses in one polarizer, but are usually formed with the same thickness.

  The number and length of the thin wires 2 are not particularly limited as long as a desired extinction ratio and P-wave transmittance can be obtained, and are appropriately set according to the use of the polarizer 10 and the like. It is.

  The pitch of the thin wires 2 (P1 shown in FIG. 4A) is not particularly limited as long as a desired extinction ratio and P-wave transmittance can be obtained. Light used for generating linearly polarized light However, it can be in the range of 60 nm to 140 nm, preferably in the range of 80 nm to 120 nm, particularly in the range of 90 nm to 110 nm. It is preferable that This is because the pitch is excellent in extinction ratio and P-wave transmittance.

  The pitch of the fine line is the maximum pitch of the fine lines adjacent in the width direction. When the fine line is composed of a plurality of layers, the pitch includes all the layers.

  Moreover, although the pitch of the said thin wire | line may include the thing of a different pitch in one polarizer, it is normally formed with the same pitch.

  The duty ratio of the fine wire, that is, the ratio of the width to the fine wire pitch (width / pitch) is not particularly limited as long as a desired extinction ratio and P-wave transmittance can be obtained. For example, it can be in the range of 0.3 or more and 0.6 or less, and in particular, it is preferably in the range of 0.35 or more and 0.45 or less. This is because with the duty ratio, a polarizer having an excellent extinction ratio while having a high P-wave transmittance can be obtained, and fine wire processing can be facilitated.

  Note that the width of the thin line refers to the length in the direction perpendicular to the longitudinal direction of the thin line in a plan view, and when the thin line includes a plurality of layers, it refers to the width including all layers. is there.

  The width of the thin line may include one having different widths in one polarizer, but is usually formed with the same width.

(Polarization region)
The polarizing region 3 is a region where a large number of fine lines are arranged. In the polarizer 10 shown in FIGS. 4A and 4B, the periphery is surrounded by the light shielding film 4. Further, the region defined by the light shielding film 4 is a region through which incident light is transmitted. In the polarizer 10 shown in FIGS. 4A and 4B, the region through which incident light is transmitted and the polarizing region 3 are viewed in plan view. Match.

  In the present invention, the region through which incident light is transmitted can be made larger than the polarizing region 3. More specifically, the thin wire 2 may not be connected to the light shielding film 4 in the longitudinal direction (Y direction shown in FIG. 4A).

Further, in the arrangement direction of the thin wires 2 (in a plan view, the direction perpendicular to the longitudinal direction of the thin wires 2, that is, the X direction shown in FIG. 4A), the distance between the thin wire 2 at the end and the light shielding film 4 is The size may be larger than the distance between the thin wires 2. More specifically, in FIGS. 4A and 4B, the distance P2 between the left edge of the thin wire 2 at the right end in the drawing and the inner edge of the light shielding film 4 is
The size may be larger than the pitch P1 between the thin wires 2.
However, in order to obtain a high extinction ratio, it is preferable that the thin wire 2 is connected to the light-shielding film 4 in the longitudinal direction as in the polarizer 10 shown in FIGS. . The area where the thin line 2 outside the polarizing area 3 does not exist, that is, the area where incident light is transmitted but not polarized, can be made smaller, and the transmission of the S wave component of the incident light can be further suppressed. Because.

  Moreover, it is preferable that the space | interval of the thin wire | line 2 and the light shielding film 4 of the terminal in the sequence direction of the thin wire | line 2 is the same magnitude | size as the space | interval of the thin wire | line 2 mutually.

  More specifically, in FIGS. 4A and 4B, the distance P2 between the left edge of the thin wire 2 at the right end in the drawing and the inner edge of the light shielding film 4 is the same as the pitch P1 between the thin wires 2. The size is preferred. Similarly, in FIGS. 4A and 4B, the distance between the right edge of the thin wire 2 at the left end in the drawing and the edge on the inner edge side of the light shielding film 4 is the same size as the space P1 between the thin wires 2. It is preferable that This is because a higher extinction ratio can be obtained.

  In the present invention, for example, by making the process of forming the thin line 2 and the process of forming the light shielding film 4 the same process, the positional relationship between the light shielding film 4 and the thin line 2 can be accurately produced. The direction and the direction of the thin wire 2 can be made parallel or perpendicular with high accuracy.

  As described above, if the thin wire 2 is connected to the light shielding film 4, the heat accumulated in the thin wire 2 due to the light applied to the polarizer is dispersed in the light shielding film 4, and the antistatic effect is prevented. There is also an effect.

  Further, if the thin line 2 is connected to the light shielding film 4, a thin resist pattern (thin line pattern) for forming the thin line 2 is formed in the manufacturing process of the polarizer 10 to form the light shielding film 4. Can be connected to a large area resist pattern (light-shielding film pattern), and suppresses a problem that the thin resist pattern (thin line pattern) for forming the thin line 2 collapses or peels off during the manufacturing process. You can also.

(Light shielding film)
The light shielding film 4 is formed outside the polarizing region 3 and suppresses the transmission of incident light, particularly the S wave component of the incident light.

  In the present invention, the light-shielding film 4 preferably has a light-shielding property with an optical density of 2.8 or more for ultraviolet light having a wavelength of 240 nm or more and 380 nm or less.

  This is because a polarizer having an excellent extinction ratio can be provided when the light-shielding film 4 has a high light-shielding property in the wavelength range of ultraviolet light irradiated to impart alignment regulating force to the photo-alignment film. .

  The material constituting the light shielding film 4 is not particularly limited as long as a desired optical density can be obtained. For example, aluminum, titanium, molybdenum, silicon, chromium, tantalum, ruthenium, niobium, hafnium, Examples include metals, alloys such as nickel, gold, silver, platinum, palladium, rhodium, cobalt, manganese, iron and indium, and materials containing any of these oxides, nitrides or oxynitrides. it can. Among these, a material containing molybdenum silicide can be preferably cited.

  When the material constituting the light shielding film 4 is made of a material containing molybdenum silicide, if the thickness of the light shielding film 4 is 60 nm or more, the optical density is 2 with respect to ultraviolet light having a wavelength of 240 nm or more and 380 nm or less. This is because it can have a light shielding property of 8 or more.

  In addition, the light shielding film 4 may be comprised from multiple types of material, and may be comprised from the several layer from which material differs.

  Moreover, it is preferable that the material which comprises the light shielding film 4 contains the material which comprises the thin wire | line 2. FIG.

  In the case where the material constituting the light shielding film 4 contains the material constituting the thin wire 2, the apparatus and material used in the process of forming the thin wire 2 can be used in the process of forming the light shielding film 4, and the manufacturing cost is increased. This is because of the reduction. Furthermore, by making the process of forming the thin line 2 and the process of forming the light shielding film 4 the same process, the relative positional accuracy between the thin line 2 and the light shielding film 4 can be improved.

  Further, when both the material constituting the light shielding film 4 and the material constituting the thin wire 2 are made of a material containing molybdenum silicide, the light shielding film 4 has high light shielding properties, and has an extinction ratio and It can be set as the polarizer excellent in P wave transmittance.

<Method for producing polarizer>
Next, the manufacturing method of the polarizer which concerns on this invention is demonstrated.

  A method for producing a polarizer according to the present invention is a method for producing a polarizer having a plurality of thin wires and a light-shielding film that shields ultraviolet light on a transparent substrate having transparency. A step of preparing a laminate having a thin wire material layer formed thereon, a step of forming a resist layer on the thin wire material layer, a step of forming a resist pattern having a thin wire pattern and a light shielding film pattern, And a step of etching the laminated body using a resist pattern as an etching mask.

  In the present invention, a manufacturing process can be shortened by forming and etching a resist pattern having a fine line pattern and a light shielding film pattern, and making the process of forming the fine wire 2 and the process of forming the light shielding film 4 the same process. In addition, the relative positional accuracy between the thin wire 2 and the light shielding film 4 can be improved.

  Moreover, manufacturing cost can also be restrained low by comprising the thin wire | line 2 and the light shielding film 4 from the same material.

  5 and 6 are schematic process diagrams showing an example of a method for producing a polarizer according to the present invention.

  For example, in order to manufacture the polarizer 10 using the method for manufacturing a polarizer according to the present invention, first, a thin wire 2 and a light shielding film 4 are formed on a transparent substrate 1 as shown in FIG. A laminated body 1A is prepared in which a polarizing material layer (a thin wire material layer) 31 made of a material to be formed and a hard mask material layer 32 that functions as a hard mask when the polarizing material layer 31 is etched are sequentially formed.

  Next, a resist layer 33 is formed on the laminated body 1A by a resist film forming apparatus (FIG. 5B), and an electron beam 40 is irradiated by an electron beam irradiation apparatus (FIG. 5C). Development is then performed to form a resist pattern 34 having a fine line pattern 34a and a light-shielding film pattern 34b (FIG. 5D).

  In the present invention, as will be described later, for example, by using an electron beam drawing apparatus used for manufacturing a photomask for semiconductor lithography, the fine line pattern 34a and the light-shielding film pattern 34b, and the above alignment marks and the like are formed in the same process. As a result, the relative positions of the electron beam drawing apparatuses can be controlled under high-accuracy positional accuracy management.

  Next, in the etching apparatus, the hard mask material layer 32 is etched using the resist pattern 34 as an etching mask to form a hard mask pattern 32P (FIG. 6E). For example, when chromium is used as the material of the hard mask material layer 32, the hard mask pattern 32P can be formed by dry etching using a mixed gas of chlorine and oxygen.

  Next, in the etching apparatus, using the resist pattern 34 and the hard mask pattern 32P as an etching mask, the polarizing material layer 31 is etched to form the polarizing material pattern 31P having the fine lines 2 and the light shielding film 4 (FIG. 6). (F)). For example, when molybdenum silicide is used as the material of the polarizing material layer 31, the polarizing material pattern 31P can be formed by dry etching using SF6 gas.

  Next, in the peeling apparatus, the resist pattern 34 is removed (FIG. 6G), and then the hard mask pattern 32P is removed, so that a plurality of fine wires 2 and a light shielding film 4 are provided on the transparent substrate 1. A polarizer 10 is obtained (FIG. 6 (h)).

  Although omitted in the examples shown in FIGS. 5 and 6, in the present invention, a plurality of fine wires 2 and a light-shielding film 4 are formed on a transparent substrate 1 having a large area, and then the fine wires 2 are arranged. The polarizer 10 cut out to a desired size and shape may be obtained by cutting the outside of the polarized region 3.

  In the above description, the polarizing material layer 31 is etched while leaving the resist pattern 34. In the present invention, after the step of forming the hard mask pattern 32P shown in FIG. The polarizing material layer 31 may be formed by removing the pattern 34 and etching the polarizing material layer 31 using only the hard mask pattern 32P as an etching mask.

  In the above description, the hard mask pattern 32P is removed as the polarizer 10 to be obtained. However, in the present invention, the hard mask pattern 32P may be left entirely or partially as necessary. good.

  For example, a form in which the hard mask pattern 32P is left on the entire surface as shown in FIG. 6G may be used as a finally obtained polarizer. In this case, the process of removing the hard mask pattern 32P can be omitted, and the effect of shortening the process can be achieved.

  In the above description, the hard mask material layer 32 is provided on the polarizing material layer 31. However, in the present invention, the resist layer is provided on the polarizing material layer 31 without providing the hard mask material layer 32. 33 may be formed, and the polarizing material layer 31 may be etched using the resist pattern 34 as an etching mask to form a polarizing material pattern 31P having the fine wire 2 and the light shielding film 4.

<Electron beam irradiation method>
Here, the method used to form the resist pattern 34 shown in FIG. 5C is any method that can form the resist pattern 34 having the desired fine line pattern 34a and the light-shielding film pattern 34b. Among them, the method of irradiating with an electron beam is preferable.

  The resist pattern formation by the electron beam irradiation method has a track record in manufacturing semiconductor photomasks and the like. For example, a fine line pattern with a pitch in the range of 60 nm to 140 nm can be accurately formed in a desired region. Because. In addition, the relative positional accuracy between the thin line pattern 34a and the light shielding film pattern 34b can be set to the nanometer level accuracy required for manufacturing a photomask for a semiconductor.

  Further, in the present invention, the resist layer 33 is composed of a positive electron beam resist, and the step of forming the resist pattern 34 having the fine line pattern 34a and the light shielding film pattern 34b includes the desired fine line and the desired light shielding. A step of irradiating the resist layer 33 other than the position where the film is formed with an electron beam is preferable.

  More specifically, the thin line pattern 34a constitutes a line and space pattern, and it is preferable to irradiate the resist layer 33 at a position to be the space pattern portion of the line and space pattern with an electron beam.

  This is because the area where the electron beam is irradiated can be reduced by the method of irradiating the electron beam to the above position, and the time of the electron beam irradiation process can be shortened.

  The above will be described in more detail.

  For example, when the width of the thin wire 2 of the polarizer 10 shown in FIGS. 4 (a) and 4 (b) is half the pitch of the thin wire 2, a negative electron beam resist is used and the thin wire 2 of the polarizer 10 is used. When obtaining the pattern and the light shielding film pattern, the area irradiated with the electron beam is an area obtained by adding the area of the light shielding film 4 to the total area of all the thin lines 2.

  On the other hand, when a positive type electron beam resist is used, the area irradiated with the electron beam is the total area of all of the space portions of the thin lines 2, that is, the area of all the thin lines 2 is generally combined. The time to irradiate the area can be reduced.

  Next, the electron beam irradiation method will be further described with reference to FIGS. As shown in FIGS. 1 to 3, an electron beam irradiation method using an electron beam irradiation apparatus is used to form a resist pattern 34 having a fine line pattern 34 a and a light shielding film pattern 34 b on the resist layer 33.

  As shown in FIGS. 1 to 3, the electron beam irradiation apparatus 11 has an electron gun 12 that generates an electron beam 40 and a rectangular opening 13 a that allows the electron beam 40 generated from the electron gun 12 to pass therethrough. A first aperture 13, a first deflector 14 that deflects the electron beam 40 that has passed through the first aperture 13, and a first aperture 15 a having a plurality of linear openings 15 a that allow the electron beam 40 deflected by the first deflector 14 to pass therethrough. 2nd deflection 15 and 2nd deflection which deflects electron beam 40 which passed the 2nd aperture 15, and irradiates the deflected electron beam 40 to resist layer 33 provided on polarizing material layer 31 of layered product 1A mentioned above And a device 16.

  Among these, the first aperture 13 has a single rectangular opening 13a, and the second aperture 15 has a plurality of linear openings 15a and a linear mask 15b between the linear openings 15a.

  In general, the electron beam 40 generated from the electron gun 12 has a large energy near the center and a small energy near the periphery.

  For this reason, the electron beam 40 generated from the electron gun 12 passes through the first aperture 13 having the rectangular opening 13a, so that only the electron beam 40 in the vicinity of the center having a large energy among the electron beams 40 is used. Can do.

  Next, the electron beam 40 that has passed through the first aperture 13 passes through the second aperture 15 having a plurality of linear openings 15a, whereby a plurality of linear electron beams 40a can be obtained by the second aperture 15. Thus, the linear electron beam 40a obtained can be irradiated to the resist layer 33 provided on the laminated body 1A.

  Next, an electron beam irradiation method using the electron beam irradiation apparatus 11 having such a configuration will be described.

  As shown in FIGS. 1 to 3, the electron beam 40 generated from the electron gun 12 passes through the rectangular opening 13 a of the first aperture 13, and only the electron beam 40 near the center having a large energy among the electron beams 40. Is selected.

  Next, the electron beam 40 that has passed through the first aperture 13 is deflected by the first deflector 14 and enters the second aperture 15. Next, the electron beam 40 passes through the linear opening 15a of the second aperture 15 to form a plurality of linear electron beams 40a. Next, the linear electron beam 40a is deflected through the second deflector 16 and irradiated onto the resist layer 33 provided on the stacked body 1A.

  At this time, the linear electron beam 40 a is irradiated to the resist layer 33 for each shot, and the linear electron beam 40 a irradiated for each shot includes a predetermined number of linear electron beams 40 a on the resist layer 33. A rectangular electron beam unit region 40A is formed (see FIG. 2).

  In this case, the linear electron beam 40a included in the unit region 40A of the electron beam corresponds to the fine wire 2 or the space between the fine wires 2 depending on the type of the electronic resist of the resist layer 33.

  In FIG. 2, the linear electron beam 40 a included in the unit region 40 of the electron beam formed on the resist layer 33 is shown corresponding to the thin line 2 of the polarizer 10.

  The electron beam unit region 40 </ b> A corresponds to the unit thin line region 2 </ b> A including the plurality of thin wires 2 of the polarizer 10.

  By the way, the linear electron beam 40a formed by the linear opening 15a of the second aperture 15 is irradiated on the resist layer 33 for each shot to form a unit region 40A of the electron beam. In this case, each time the linear electron beam 40a is irradiated, the second deflector 16 deflects the linear electron beam 40a, so that the unit region 40A is formed on the resist layer 33 along the horizontal direction of FIG. It can be provided in multiple rows (in a direction orthogonal to the electron beam 40a) and can be provided in multiple stages along the vertical direction of FIG. 2 (in parallel with the linear electron beam 40a). In this case, it can be said that the unit regions 40A are arranged in multiple rows in a direction orthogonal to the one side 40b of the unit region 40A, for example, the left side or the right side, and in a direction parallel to the left side or the right side.

  As shown in FIG. 2, the electron beam unit area 40A is formed in a rectangular shape for each shot, and each unit area 40A is partitioned by a virtual vertical line 40V and a horizontal line 40H. Are arranged in a grid in multiple stages and multiple rows.

  Each thin wire 2 of the polarizer 10 is formed by the linear electron beam 40A as described above, and a unit thin wire region 2A including a plurality of thin wires 2 is formed corresponding to the unit region 40A. In this case, the fine lines 2 between the unit fine line regions 2A adjacent to each other in the direction parallel to the fine lines 2 (vertical direction in FIG. 2) are continuous with each other to form one fine line 2 extending in the vertical direction.

  As described above, according to the present embodiment, the electron beam 40 that has passed through the first aperture 13 passes through the second aperture 15 having the plurality of linear openings 15a, so that the linear electron beam 40a is generated. The electron beam 40a is irradiated onto the resist layer 33 on the laminated body 1A for each shot to form an electron beam unit region 40A including a plurality of linear electron beams 40a, and the second deflector 16 forms a linear electron beam. Unit regions 40A were formed in multiple rows and multiple stages by deflecting 40a. As a result, the manufacturing time of the polarizer 10 can be greatly reduced as compared with the case where a single linear electron beam having a rectangular shape is irradiated onto the resist layer and the single linear electron beam is deflected. it can.

<Second Embodiment>
Next, a second embodiment of the present invention will be described with reference to FIG.

  In the first embodiment shown in FIGS. 1 to 6, the resist layer 33 provided on the stacked body 1A is partitioned by a vertical line 40V and a horizontal line 40H, and includes a plurality of linear electron beams 40a. An example in which the unit area 40A of the rectangular electron beam is formed and the unit areas 40A are arranged in multiple rows and multiple stages has been shown. However, the present invention is not limited thereto, and a boundary 40B between adjacent unit areas 40A in each stage is defined. You may change mutually between adjacent steps.

  In the first embodiment shown in FIGS. 1 to 6, the rectangular electron beam unit region 40A is partitioned by the vertical direction line 40V and the horizontal direction line 40H. The boundary of coincides with the vertical direction line 40V.

  On the other hand, as shown in FIG. 7, the position of the boundary 40B of the adjacent unit regions 40A of each step may be gradually shifted to the right according to the first step, the second step, the third step,. Good.

  In FIG. 7, the position of the boundary 40 </ b> B of the adjacent unit regions 40 </ b> A of each step is gradually shifted between the adjacent steps, that is, the steps adjacent in the vertical direction.

  As described above, since the unit region 40A is composed of a plurality of linear electron beams 40a irradiated to the resist layer 33 for each shot, the interval between the linear electron beams 40a is basically constant in the unit region 40A. .

  On the other hand, the interval between the linear electron beams 40a at the boundary 40B of the unit region 40A may differ between shots of the linear electron beam 40a, and the width of the boundary 40B between the unit regions 40A is within the unit region 40A. The distance between the linear electron beams 40a may slightly change, for example, may increase.

  In such a case, the boundary 40B between the unit regions 40A corresponds to the space 2B between the thin lines 2, and when the boundary 40B is linearly arranged in the vertical direction in FIG. A linear wide space 2B extending in the up-down direction is formed between the two due to the boundary 40B of the unit region 40A, and the wide space 2B between the thin wires 2 interferes with the polarization function of the polarizer 10.

According to the present embodiment, the position of the boundary 40B of the unit region 40A between adjacent columns of each stage can be gradually changed between the adjacent stages, and thereby, the thin wire 2 of the polarizer 10 can be changed. It is possible to prevent the formation of the linear wide space 2B extending in the vertical direction between the two. In addition, since the unit regions 40A have the same pattern of the linear electron beams 40a, it is not necessary to change the number of the linear electron beams 40a irradiated for each shot, and it is easy to create exposure data.
Here, the example in which the interval between the linear electron beams 40a at the boundary 40B between the adjacent unit regions 40A is larger than the interval between the linear electron beams 40a in the unit region 40A has been described. Not limited to this, the interval between the linear electron beams 40a at the boundary 40B may be smaller than the interval between the linear electron beams 40a in the unit region 40A or may not change. The difference in the spacing between the linear electron beams 40a in the unit region 40A and the boundary 40B between the unit regions 40A is the difference in the spacing between the thin wires 2 in the manufactured polarizer 10 when the appearance is inspected. It is detected as (a connecting portion between the unit areas 40). Therefore, the position of the boundary 40B between the adjacent unit regions 40A can be recognized by appearance inspection. In the second embodiment, the position of the boundary 40B between the adjacent unit regions 40A of each stage is regularly shifted every first stage, second stage, third stage,... When the inspection is performed, a regular connection portion can be detected between the adjacent steps in the vertical direction.

<Third Embodiment>
Next, a third embodiment of the present invention will be described with reference to FIG.

  In the first embodiment shown in FIGS. 1 to 6, the resist layer 33 provided on the stacked body 1A is partitioned by a vertical line 40V and a horizontal line 40H, and includes a plurality of linear electron beams 40a. An example in which the unit area 40A of the rectangular electron beam is formed and the unit areas 40A are arranged in multiple rows and multiple stages has been shown. However, the present invention is not limited thereto, and a boundary 40B between adjacent unit areas 40A in each stage is defined. You may change mutually between adjacent steps.

  In the first embodiment shown in FIGS. 1 to 6, the rectangular electron beam unit region 40A is partitioned by the vertical direction line 40V and the horizontal direction line 40H. The boundary of coincides with the vertical direction line 40V.

  On the other hand, as shown in FIG. 8, the position of the boundary 40B between the adjacent unit regions 40A of each stage is shifted in an irregular state for each of the first stage, the second stage, the third stage,. Also good.

  In FIG. 8, the position of the boundary 40B of the adjacent unit regions 40A of each stage is shifted in an irregular state between the adjacent stages, that is, the stages adjacent in the vertical direction.

  As described above, since the unit region 40A is composed of a plurality of linear electron beams 40a irradiated to the resist layer 33 for each shot, the interval between the linear electron beams 40a is basically constant in the unit region 40A. .

  On the other hand, the width of the boundary 40B of the unit region 40A may differ between shots of the linear electron beam 40a, and the width of the boundary 40B between the unit regions 40A is between the linear electron beams 40a in the unit region 40A. It may vary somewhat with respect to the spacing, for example it may be larger.

  In such a case, the boundary 40B between the unit regions 40A corresponds to the space 2B between the thin wires 2, and when this boundary 40B is arranged linearly in the vertical direction of FIG. 8, the thin wire 2 of the obtained polarizer 10 A linear wide space 2B extending in the vertical direction is formed due to the boundary 40B of the unit region 40A therebetween, and the wide space 2B between the thin wires 2 interferes with the polarization function of the polarizer 10.

    According to the present embodiment, the position of the boundary 40B of the adjacent unit regions 40A of each step can be changed to an irregular state between the adjacent steps, and as a result, the thin wire 2 of the polarizer 10 can be changed. It can prevent more reliably that the linear wide space extended in an up-down direction is formed in between. Here, the example in which the interval between the linear electron beams 40a at the boundary 40B between the adjacent unit regions 40A is larger than the interval between the linear electron beams 40a in the unit region 40A has been described. As in the second embodiment, the interval between the linear electron beams 40a at the boundary 40B may be smaller than or unchanged from the interval between the linear electron beams 40a in the unit region 40A. Further, in the polarizer 10 formed according to the third embodiment, the position of the boundary 40B of the adjacent unit regions 40A of each step is in an irregular state between the adjacent steps, that is, the steps adjacent in the vertical direction. Since they are shifted, when a visual inspection is performed, a connecting portion between the unit regions 40 can be detected between the adjacent steps in the vertical direction.

<Fourth embodiment>
Next, a fourth embodiment of the present invention will be described with reference to FIG.

  In the first embodiment shown in FIGS. 1 to 6, the resist layer 33 provided on the stacked body 1A is partitioned by a vertical line 40V and a horizontal line 40H, and includes a plurality of linear electron beams 40a. A rectangular electron beam unit region 40A is formed, and the unit regions 40A are arranged in multiple rows in a direction orthogonal to the left side or right side of the unit region and in multiple stages in a direction parallel to the left side or right side of the unit region 40A. However, the present invention is not limited to this, and is not limited to this, and is arranged in multiple rows in a direction having an inclination of 45 ° on one side of the unit region 40A, and in multiple stages in a direction having an inclination of 45 ° relative to one side of the unit region 40A. You may arrange.

  In FIG. 9, a rectangular electron beam unit region 40A is formed by irradiating the resist layer 33 with a plurality of linear electron beams 40a for each shot. The unit area 40A is partitioned by four sides. In this case, the four sides of the unit area 40 correspond to the cut 40S for each shot.

  In the embodiment shown in FIG. 2, the unit regions 40A are arranged in multiple rows in a direction orthogonal to the left side or right side of one side 40b of the unit region 40A, for example, in a direction parallel to the left side or right side, In the embodiment shown in FIG. 9, the unit regions 40A are arranged in multiple rows in a direction inclined by 45 ° with respect to one side of the unit region, for example, one cut 40S, and in a direction inclined by 45 ° with respect to the cut 40S. Are arranged in multiple stages.

  In this way, by disposing the unit regions 40A in multiple rows and multiple stages in a direction inclined by 45 ° with respect to one side of the unit region 40A, for example, one cut 40S, the cuts 40S dividing the unit region 40A are shown in FIG. In FIG. 3, the vertical electron beam 40a does not extend continuously in the vertical direction. For this reason, it is possible to reliably prevent a linear wide space extending in the vertical direction from being formed between the thin wires 2 of the polarizer 10 due to the cut 40S of the unit region 40A.

<Fifth embodiment>
Next, a fifth embodiment of the present invention will be described with reference to FIG.

  In the first embodiment shown in FIG. 1 to FIG. 6, a plurality of linear electron beams are irradiated by irradiating the resist layer 33 provided on the stacked body 1A with a plurality of linear electron beams 40a for each shot. While the rectangular electron beam unit region 40A including 40a is formed and the unit region 40A is arranged in multiple rows and multiple stages, the present invention is not limited to this, and each shot of the linear electron beam 40a, The unit area 40A does not necessarily correspond.

  As shown in FIG. 10, unit regions 40A of electron beams are arranged in multiple rows in the horizontal direction. Although not shown, the unit regions 40A are arranged in multiple stages in the vertical direction.

  In FIG. 10, the electron beam unit region 40A is formed by irradiating the resist layer 33 with a plurality of linear electron beams 40a. In this embodiment, one shot of the linear electron beam 40a is a unit. The area 40 does not necessarily correspond.

  For example, the first group 41 of the linear electron beams 40a is formed by the first shot of the linear electron beam 40a, and the first electron beam 40a of the first group 41 causes the first group 41 from the left end of FIG. The entire unit area 40A is obtained.

  Next, the 2nd group 42 of the linear electron beam 40a is obtained by the 2nd shot of the linear electron beam 40a. Since the second group 42 includes a small number of linear electron beams 40a, only a part of the second unit region 40A from the left end in FIG. 10 is configured.

  Next, the 3rd group 43 of the linear electron beam 40a is obtained by the 3rd shot of the linear electron beam 40a. Since the third group 42 also includes a small number of linear electron beams 40a, it forms a part of the second unit region 40A from the left end.

  Next, the 4th group 44 of the linear electron beam 40a is obtained by the 4th shot of the linear electron beam 40a. The fourth group 44 includes a large number of linear electron beams 40a, and extends from the second part region 40A to the third unit region 40A from the left end.

  Next, a fifth group 45 of the linear electron beams 40a is obtained by the fourth shot of the linear electron beams 40a. The fifth group of linear electron beams 40a includes a moderate number of linear electron beams 40a, and fills the remainder of the third unit region 40A from the left end.

  When the linear electron beam 40 a is irradiated for each shot, the electron beam 40 passing through the first aperture 13 is deflected by using the first deflector 14, and the deflected electron beam 40 is directed to the second aperture 15. The number of linear electron beams 40a for each shot can be adjusted. In this case, the shape and interval of the linear electron beam 40a formed for each shot are equal to each other.

As described above, according to the present embodiment, the number of the linear electron beams 40a for each shot is changed, and the unit region 40A is formed by the linear electron beams 40a for a plurality of shots. The gap between the lines 40a can be made less noticeable. Further, since the fourth group 44 of the linear electron beams 40 is formed across the two adjacent unit regions 40A, the width of the boundary 40B between the two adjacent unit regions 40A is increased, and accordingly, the width between the thin lines 2 is increased. The space 2B does not expand excessively.
Also in the fourth and fifth embodiments, the interval between the linear electron beams 40a at the boundary 40B between the adjacent unit regions 40A is equal to the interval between the linear electron beams 40a in the unit region 40A. It is not limited to a wide width, and may be narrow or the same. In addition, the position of the boundary 40B between the adjacent unit regions 40A of each stage can be detected as a change in the interval between the thin wires 2 (a connecting portion between the unit regions 40) in the appearance inspection of the manufactured polarizer 10.

DESCRIPTION OF SYMBOLS 1 Transparent substrate 1A Laminated body 2 Thin wire 2A Unit thin wire | line area | region 3 Polarizing region 4 Light shielding film 10 Polarizer 11 Electron beam irradiation apparatus 12 Electron gun 13 1st aperture 13a Rectangular opening 14 1st deflector 15 2nd aperture 15a Linear Aperture 16 Second deflector 40 Electron beam 40a Linear electron beam 40b Side 40A Electron unit region 40B Boundary 40H Horizontal line 40S Shot cut 40V Vertical line

Claims (9)

In a method for producing a polarizer having a transparent substrate and a plurality of thin wires provided in parallel to each other on the transparent substrate,
Preparing a laminate having the transparent substrate and the thin wire material layer;
Forming a resist layer on the laminate;
Irradiating the resist layer with an electron beam for exposure, developing, and forming a pattern on the resist layer; and
Etching the laminate through the resist layer, and
The step of irradiating the electron beam comprises:
Passing an electron beam through a first aperture having a rectangular opening;
Passing an electron beam that has passed through the first aperture through a second aperture having a plurality of linear openings;
Forming a rectangular unit region including a plurality of linear electron beams irradiated to the resist layer while irradiating the resist layer with the linear electron beam having passed through the second aperture for each shot, and A step of polarizing the linear electron beam to form the unit regions in multiple rows and multiple stages;
A method for producing a polarizer, comprising: The unit regions are formed in multiple rows along a direction orthogonal to one side of the unit region, and in multiple stages along a direction parallel to one side of the unit region,
The method for manufacturing a polarizer according to claim 1, wherein a boundary between adjacent unit regions of each stage is different from each other between adjacent stages.   3. The method for manufacturing a polarizer according to claim 2, wherein a boundary between adjacent unit regions of each stage is different from each other with regularity between adjacent stages.   The method for manufacturing a polarizer according to claim 2, wherein boundaries between adjacent unit regions of each stage are different from each other in an irregular state between adjacent stages.   2. The method of manufacturing a polarizer according to claim 1, wherein the number of linear electron beams that have passed through the second aperture is changed for each shot, and the unit region is formed by a plurality of shots of linear electron beams.   The method for manufacturing a polarizer according to claim 1, wherein the unit regions are formed in multiple rows and stages along a direction inclined with respect to one side of the unit region.   2. A unit fine line region including a plurality of fine lines is formed corresponding to the unit region of the resist layer, and fine lines between adjacent unit fine line regions are continuous in a direction parallel to the fine lines. The manufacturing method of the polarizer of description. In an electron beam irradiation apparatus for manufacturing a polarizer having a transparent substrate and a plurality of fine wires provided in parallel to each other on the transparent substrate,
An electron gun that generates an electron beam;
A first aperture having a rectangular opening for passing an electron beam from the electron gun;
A second aperture having a plurality of linear openings through which the electron beam that has passed through the first aperture passes;
A unit region including a plurality of linear electron beams irradiated to the resist layer while irradiating the resist layer with the linear electron beam having passed through the second aperture for each shot is formed, and the linear electrons Deflection means for polarizing the line to form the unit regions in multiple rows and multiple stages;
An apparatus for manufacturing a polarizer, comprising: A transparent substrate;
In a polarizer comprising a plurality of fine wires provided in parallel to each other on a transparent substrate,
The fine line is a unit region containing a plurality of electron beams while irradiating the resist layer provided on the thin line material layer on the transparent substrate for each shot with a linear electron beam that has passed through an aperture having a plurality of linear openings. The polarizer is characterized in that the gap between the fine wires in the unit fine wire region corresponding to the unit region is different from the width of the boundary between the adjacent unit fine wire regions.

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