KR20130069303A - Liquid crystal display device and method for fabricating the same - Google Patents

Abstract

PURPOSE: A liquid crystal display device and a method for fabricating the same are provided to form an electrode having a double structure consisting of a transparent conduction material layer and an opaque metal layer, to prevent a chuck smudge, and to improve the transmittance of a pixel region. CONSTITUTION: A switching device is arranged in the cross region of a data line and a gate line. A pixel electrode and a common electrode are alternatively arranged in a pixel region and are parallel to the data line. The pixel electrode and the common electrode have double structure consisting of a transparent conduction material layer(280) and an opaque metal layer(281). The laminated transparency conduction material layer and the opaque metal layer have a transmittance of 70% or less.

Description

TECHNICAL FIELD [0001] The present invention relates to a liquid crystal display device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device and a method of manufacturing the same, by forming a multi-layer translucent electrode using a transparent conductive material layer and an opaque metal layer, thereby improving chuck staining and improving pixel transmittance. It is about.

In general, a liquid crystal display (LCD) displays an image by adjusting a light transmittance of a liquid crystal having dielectric anisotropy using an electric field. In the liquid crystal display, a color filter substrate on which a color filter array is formed and a thin film transistor array substrate on which a thin film transistor (TFT) array is formed are bonded to each other with a liquid crystal interposed therebetween.

Recently, in order to solve the narrow viewing angle problem of the liquid crystal display, a liquid crystal display adopting various new methods has been developed. Liquid crystal displays having a wide viewing angle include an in-plane switching mode (IPS), an optically compensated birefrigence mode (OCB), and a fringe field spooling (FFS).

In the transverse electric field type liquid crystal display, a horizontal electric field is generated between the electrodes by disposing a pixel electrode and a common electrode on the same substrate. As a result, the long axes of the liquid crystal molecules are arranged in a horizontal direction with respect to the substrate, and thus have a wide viewing angle characteristic as compared with the conventional twisted nematic (TN) type liquid crystal display.

1 is a view showing the structure of a conventional transverse electric field type liquid crystal display device.

Referring to FIG. 1, a transverse electric field type liquid crystal display device includes an array substrate 34 and a color filter substrate 32. In the array substrate 34, a thin film transistor (not shown), a pixel electrode 21, and a common electrode 22 are formed on the first substrate 10a, and a first alignment layer () is formed on the entire surface of the first substrate 10a. 20) to form and complete. The color filter substrate 32 facing the array substrate 34 is formed by forming a color filter layer (not shown) on the second substrate 10b and forming a second alignment layer 30 on the color filter layer. .

The array substrate 34 and the color filter substrate 32 are bonded to each other with the liquid crystal layer 25 interposed therebetween. Since the pixel electrode 21 and the common electrodes 22 are alternately disposed on the same substrate, the pixel electrode The horizontal electric field is generated due to the voltage difference supplied to the 21 and the common electrode 22. The long axis of the liquid crystal molecules of the liquid crystal layer 25 is arranged in parallel to the first substrate 10a and the second substrate 10b by the horizontal electric field, thereby realizing a wide viewing angle with respect to the conventional TN mode.

The array substrate 34 includes a first polarizing plate 50a for polarizing light incident on the liquid crystal layer 25, and the color filter substrate 32 is a polarizing agent for polarizing light passing through the liquid crystal layer 25. 2 polarizing plate 50b is included. The light passing through the color filter substrate 32 is controlled by the combination of the first polarizing plate 50a and the second polarizing plate 50b.

In general, the pixel electrode 21 is formed of a transparent conductive material, and the common electrode 22 uses an opaque metal. The electrode width W1 of the pixel electrode 21 and the common electrode 22 and the distance between the electrodes are generally used. The transmittance of the pixel region is determined according to L1. The average wavelength of light passing through the pixel region is 380 nm to 530 nm.

In particular, in recent years, the pixel area is reduced according to the demand for high resolution, and the non-transmissive area in which the thin film transistor is formed is increased, so that a high transmittance is required in the narrowed pixel area. However, there are physical limitations in forming a pixel electrode or a common electrode having a predetermined width or less due to the characteristics of current exposure equipment.

FIG. 2 is a diagram illustrating a problem in which chuck stain defects occur when forming electrodes of a liquid crystal display according to the related art.

Referring to FIG. 2, in a manufacturing process of a liquid crystal display, a substrate 84 is mounted on a chuck 80 to perform a photo process, and a photoresist is coated on the substrate 84.

That is, a transparent conductive material layer 85 is formed on the substrate 84, and a photoresist is coated on the transparent conductive material layer 85.

 Then, the photoresist pattern 90 is formed on the transparent conductive material layer 85 by performing an exposure and development process according to a mask process, and the transparent conductive material formed on the substrate 84 by an etching process. Pattern layer 85.

In order to improve transmittance of the pixel area, the pixel electrode 21 and the common electrode 22 may be formed of a transparent conductive material layer. However, it is difficult to form the width W of the photoresist to 4.3 μm or less due to occurrence of chuck unevenness.

This is because the transparent conductive material layer such as ITO has a transmittance of about 83%. When light is irradiated to the photoresist in accordance with the exposure process, the transparent conductive material layer 85 and the substrate 84 that pass through the photoresist are exposed in the exposure area of the photoresist. This is because re-reflection occurs at the chuck 80 and re-exposure is generated at the bottom of the photoresist, thereby causing chuck unevenness. Such poor chuck stains result in irregularly shaped photoresist patterns.

Therefore, in general, it is difficult to reduce the width W of the photoresist pattern 90 to 4.3 µm or less due to poor chuck unevenness, and furthermore, the distance between the photoresist patterns 90 cannot be set to 9.8 µm or more, so that the transmittance of the pixel region is reduced. There is a limit to increase.

SUMMARY OF THE INVENTION An object of the present invention is to provide a liquid crystal display device and a method of manufacturing the same, in which electrodes are formed in a double layer structure of a transparent conductive material layer and an opaque metal layer to prevent chuck unevenness and improve transmittance of the pixel region.

Another object of the present invention is to provide a liquid crystal display device and a method of manufacturing the same, which may implement a pixel electrode having a fine width by forming electrodes in a double layer structure of a transparent conductive material layer and an opaque metal layer.

According to an aspect of the present invention, a liquid crystal display device includes a substrate, a gate line and a data line cross-arranged to define a pixel area on the substrate, and an intersection of the gate line and the data line. A switching element disposed in an area, and a pixel electrode and a common electrode arranged alternately in parallel with the data line in the pixel area, wherein the pixel electrode and the common electrode are formed by laminating a transparent conductive material layer and an opaque metal layer. And a transmittance of the laminated transparent conductive material layer and the opaque metal layer is 70% or less.

In addition, the method of manufacturing a liquid crystal display of the present invention may include providing a substrate, forming a metal film on the substrate, and then forming a gate electrode, a gate line, and a first common line according to a first mask process; Forming a gate insulating layer on the substrate on which the gate electrode is formed, and forming a channel layer, a source electrode, a drain electrode, and a data line according to a second mask process; and a passivation layer on the substrate on which the source electrode and the drain electrode are formed. Then form. Performing a contact hole process exposing a part of the drain electrode according to the third mask process, forming a transparent conductive material layer and an opaque metal layer on the substrate on which the protective film is formed, and then performing an etching process according to the fourth mask process And proceeding to form a second common line, a pixel electrode having a plurality of slit bar structures, and a common electrode, wherein the pixel electrode and the common electrode are formed of a double layer structure in which a transparent conductive material layer and an opaque metal layer are stacked. The transmittance of the laminated transparent conductive material layer and the opaque metal layer is 70% or less.

The liquid crystal display of the present invention and the method of manufacturing the same have an effect of improving the transmittance of the pixel region while preventing the chuck stain by forming electrodes in a double layer structure of a transparent conductive material layer and an opaque metal layer.

The liquid crystal display of the present invention and a method of manufacturing the same have the effect of forming a pixel electrode having a fine width by forming electrodes in a double layer structure of a transparent conductive material layer and an opaque metal layer.

1 is a view showing the structure of a conventional transverse electric field type liquid crystal display device.
2 is a view for explaining a problem that chuck unevenness occurs when forming an electrode of a liquid crystal display according to the prior art.
3 is a diagram illustrating a pixel structure of a transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention.
4 is a cross-sectional view taken along line II ′ of FIG. 3.
5 is a view for explaining a process of forming an electrode having a fine width after laminating a transparent conductive material layer and an opaque metal layer of the present invention.
FIG. 6 is a graph illustrating transmittance characteristics according to a single film or a double film of a transparent conductive material layer and an opaque metal layer.
7A and 7B illustrate an etching process that proceeds to form an electrode having a fine width of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

3 is a diagram showing a pixel structure of a transverse electric field type liquid crystal display device according to the present invention.

Referring to FIG. 3, in the transverse electric field type liquid crystal display device of the present invention, a pixel region (sub-pixel region) is defined such that a gate line 101 and a data line 103 are cross-aligned, and the gate line 101 is formed. The thin film transistor TFT, which is a switching element, is disposed in an area where the data line 103 crosses.

In addition, a first common line 105 parallel to the gate line 101 and opposed to each other with a pixel region interposed therebetween is disposed, and the second pixel electrode 161 having a fine width of 3.5 μm or less is disposed in the pixel region. ) And the common electrode 171 are alternately arranged at predetermined intervals.

The second pixel electrodes 161 are formed in a plurality of slit bar structures, and are branched from the first pixel electrode 160 electrically connected to the drain electrode of the thin film transistor. In addition, the common electrodes 171 also have a plurality of slit bar structures, and are branched from the second common line 170 electrically connected to the first common line 105 to the pixel area.

The second pixel electrode 161 and the common electrode 171 are bent to be symmetrical with each other up and down on the basis of the center line A-A 'of the pixel area parallel to the gate line 101.

The first pixel electrode 160, the second pixel electrode 161, the second common line 170, and the common electrode 171 may be formed of a transparent conductive material layer (ITO, IZO, ITZO, etc.), molybdenum (Mo), or titanium. Metal layers of any one of (Ti), tantalum (Ta), tungsten (W), copper (Cu), chromium (Cr), aluminum (Al), and alloys (MoTi) formed from a combination thereof are laminated.

The thin film transistor TFT uses the gate line 101 as a gate electrode, and a channel layer, a source electrode, and a drain electrode are formed on the gate electrode.

Particularly, in the present invention, the width of the photoresist pattern for forming the second pixel electrode 161 and the common electrode 171 formed in the pixel area is 3.5 μm, and the distance between the photoresist patterns is 14.3 μm or more. It was made.

When the second pixel electrode 161 and the common electrode 171 are formed using the photoresist pattern having the above width as a mask, since the etching CD of the electrodes is about 1.5 μm, an electrode having a width of 3.5 μm or less is formed. can do.

In addition, although the transparent conductive material layer and the opaque metal layer are formed by laminating the second pixel electrode 161 and the common electrode 171 of the present invention, the thickness of the opaque metal layer is thinly formed to ensure transmittance.

For example, when the second pixel electrode 161 and the common electrode 171 are laminated with the ITO layer and the MoTi layer, when the thickness of the MoTi layer is deposited at 50 kPa, the transmittance of the electrode region is 70%, Chuck stains do not occur. However, when the transmittance of the electrode region is 70% or more, chuck unevenness may occur, and thus only the transmittance characteristic cannot be set high.

That is, although the transparent conductive material layer and the opaque metal layer are formed by laminating, a semi-transparent electrode having a substantially transmittance is formed. In addition, since the positions of the transparent conductive material layer and the opaque metal layer are not fixed, they may be interchanged.

In general, the higher the transmittance of the electrode, the better. However, as in the prior art, when the electrode is formed of a transparent conductive material layer having a high transmittance, an electrode having a fine width cannot be formed due to chuck unevenness. In the present invention, it is preferable that the total transmittance of the metal layers stacked to form the pixel electrode and the common electrode is in a range of 70% to 50%.

The liquid crystal display of the present invention and the method of manufacturing the same have an effect of improving the transmittance of the pixel region while preventing the chuck stain by forming electrodes in a double layer structure of a transparent conductive material layer and an opaque metal layer.

The liquid crystal display of the present invention and a method of manufacturing the same have the effect of forming a pixel electrode having a fine width by forming electrodes in a double layer structure of a transparent conductive material layer and an opaque metal layer.

4 is a cross-sectional view taken along line II ′ of FIG. 3.

Referring to FIG. 4, a metal film is deposited on the lower substrate 100 made of a transparent insulating material by sputtering, and then an etching process is performed according to a first mask process. In the first mask process, a photoresist as a photosensitive material is formed on the deposited metal film, and then a photoresist pattern is formed by performing an exposure and development process using a mask having a transmissive region and a non-transmissive region.

Next, the metal film is etched using the photoresist pattern as a mask to form a gate line, a gate electrode 101, and a first common line (105 in FIG. 3). The gate electrode 101 uses a gate line as an electrode.

The gate line 101 in FIG. 3 is formed from molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu), chromium (Cr), aluminum (Al), and a combination thereof. At least one alloy may be laminated and formed.

As described above, when the gate electrode 101 or the like is formed on the lower substrate 100, the channel layer 114 and the source including the gate insulating layer 102, the amorphous silicon film, and the doped amorphous silicon film (n + or p +) are sourced. Drain electrodes 117a and 117b are formed by a second mask process using a diffraction mask or a halftone mask. At this time, the data line is also formed.

The source / drain electrodes 117a and 117b may be formed of molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu), chromium (Cr), aluminum (Al), or a combination thereof. Any of the alloys formed may be used. In addition, a transparent conductive material such as indium tin oxide (ITO) may be used. In some cases, at least two metal films may be stacked.

Thereafter, the passivation layer 109 is formed on the lower substrate 100 on which the channel layer 114 is formed, and a contact hole process of exposing a part of the drain electrode 117b is performed according to the third mask process.

As described above, when the contact hole process is completed, a transparent conductive material layer and an opaque metal layer are stacked on the entire surface of the lower substrate 100, and the first pixel electrode electrically contacted with the drain electrode 117b according to the fourth mask process. 160, a second pixel electrode 161, and a common electrode 171 are formed.

The transparent conductive material layer may be indium tin oxide (ITO) or indium zinc oxide (IZO), and the opaque metal layer may include molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). , Chromium (Cr), aluminum (Al), or an alloy (MoTi) formed from a combination thereof. The transparent conductive material layer and the opaque metal layer may be stacked interchangeably.

 As described above, when the transparent conductive material layer and the metal layer are laminated, as illustrated in FIG. 5, the width W2 of the photoresist pattern is formed to be 3.5 μm or less in accordance with the exposure process. At this time, in the prior art, since the electrode is formed only of the transparent conductive material layer, when the width of the photoresist pattern is formed to be 4.3 μm or less, the chuck unevenness may occur. It does not occur.

As shown in FIG. 5, an etching process is performed using a photoresist pattern having a width of 3.5 μm or less to form the first pixel electrode 160, the second pixel electrode 161, and the common electrode 171 in the pixel area. do. The first pixel electrode 160 is stacked with a first pixel pattern portion 160a and a second pixel pattern portion 160b, and the second pixel electrode 161 is formed with a first pixel electrode pattern 161a and a second pixel pattern. The common electrode 171 is stacked with the pixel electrode pattern 161b, and the common electrode 171 is stacked with the first common electrode pattern 171a and the second common electrode pattern 171b.

The second pixel electrode 161 and the common electrode 171 are formed to have a narrower electrode width than the photoresist pattern having a width of 3.5 μm due to the penetration of the etchant during the etching process.

 The liquid crystal display of the present invention and the method of manufacturing the same have an effect of improving the transmittance of the pixel region while preventing the chuck stain by forming electrodes in a double layer structure of a transparent conductive material layer and an opaque metal layer.

The liquid crystal display of the present invention and a method of manufacturing the same have the effect of forming a pixel electrode having a fine width by forming electrodes in a double layer structure of a transparent conductive material layer and an opaque metal layer.

5 is a view illustrating a process of forming an electrode having a fine width after laminating a transparent conductive material layer and an opaque metal layer of the present invention, and FIG. 6 is a single layer or a double layer of a transparent conductive material layer and an opaque metal layer. 7A and 7B are diagrams illustrating an etching process that proceeds to form an electrode having a fine width according to the present invention.

5 to 7B, in the process of forming the pixel electrodes (the pixel electrode and the common electrode) according to the present invention, the substrate 185 including the array layer 270 having the thin film transistor and the insulating layer laminated thereon may be formed. When the substrate is disposed on the chuck 180, the transparent conductive material layer 280 and the opaque metal layer 281 are sequentially formed on the substrate 185 as described with reference to FIG. 5. The order of forming the transparent conductive material layer 280 and the opaque metal layer 281 may be changed.

A photoresist pattern 190 having a width W2 of 3.5 μm is formed on the opaque metal layer 281. The photoresist pattern 190 may be formed using an exposure light amount of 24.1 mJ. While the distance L2 of the photoresist patterns 190 of the present invention is 14.3 μm, the transmittance of the opaque metal layer laminated on the transparent conductive material layer is secured to about 70% where chuck unevenness does not occur. In this case, when the opaque metal layer is MoTi, the transmittance is about 70% when formed to a thickness of 50 kPa to 100 kPa.

Here, the transparent conductive material layer 280 is used as ITO, ITZO or IZO, and thus has a transmittance of 83%. However, since the opaque metal layer 281 blocks light, it is common that the transmittance is low. However, in the present invention, the opaque metal layer 281 is formed to be thin so that 70% of the transmittance can be obtained even in the opaque metal layer (for example, MoTi). For example, when the opaque metal layer is MoTi, the transmittance is 73% at a thickness of 50 GPa, and the transmittance of 70% is secured by the combination of the transparent conductive material layer 280 and the opaque metal layer 281. The transparent conductive material layer 280 may have a thickness of 500 μm.

Preferably, the transmittance by the combination of the transparent conductive material layer 280 and the opaque metal layer 281 should be at least 50% or greater. If the transmittance is less than 50%, it is because the luminance in the pixel area is reduced or it is difficult to implement a wide viewing angle.

In Fig. 6, a single film of ITO (500 mV), ITO (500 mV) / Cu (200 mV), ITO (500 mV) / Cu (100 mV), ITO (500 mV) / MoTi (150 mV), ITO (500 mV) / MoTi (150 mV) The transmittance vs. light wavelength characteristics of the double-layered structure composed of, ITO (500 /) / MoTi (100 Å), ITO (500 /) / MoTi (150 Å) are shown.

That is, as mentioned above, when the transparent conductive material layer 280 and the opaque metal layer 281 are laminated, the process is set by setting the design range of 70% transmittance depending on the thickness and light wavelength irradiated upon exposure. , Defective chuck stain can be improved while forming a fine electrode with an electrode width of 3.5 μm or less.

Specifically, when the transparent conductive material layer 280 and the opaque metal layer 281 are laminated to have a transmittance of about 70% and the reflectance is 50% or less, the opaque metal layer 281 is used without chucking. It is possible to prevent the lowering of transmittance. Therefore, when the transmittance is 70% or more, the probability of occurrence of chuck unevenness is high, so the transmittance is preferably 70% or less.

Then, an etching process is performed using a photoresist pattern having a width W2 of 3.5 μm or less and a distance L2 between the patterns of 14.3 μm or more as a mask to form pixel electrodes.

Referring to FIGS. 7A and 7B, the etching of the CD (critical dimension) bias increases with the time of etching the photoresist pattern PR and the electrode pattern EP to be etched into the etching solution. Although shown in the figure, AL which is not described is an array layer.

Therefore, when the etching process is performed using the photoresist pattern PR of 3.5 μm or less, the widths of the electrodes actually formed by the etching CD may be narrower.

Accordingly, in the present invention, when forming an electrode having a fine electrode width, the transparent conductive material layer and the opaque metal layer are laminated, and the exposure process is performed, whereby the chuck unevenness generated by re-exposure is reflected by the light during the exposure process. There is an advantage that can be prevented.

In addition, in the present invention, by stacking a transparent conductive material layer and an opaque metal layer and adjusting the total transmittance therewith, there is an effect of forming a fine electrode pattern while minimizing a decrease in transmittance due to the use of the opaque metal layer.

In the present invention, the electrode formed by stacking the transparent conductive material layer and the opaque metal layer has a transmittance of 70% to 50%, and a reflectance of 50% or less, thereby ensuring transmittance so that chuck unevenness does not occur.

If the opaque metal layer is MoTi, the transmittance decreases and the reflectance increases as the deposition time increases. Therefore, in consideration of the transmittance and reflectance characteristics, if the transmittance is set to 50% or more and the reflectance is 25% or less, the transmittance characteristic of the 70% band where chuck unevenness does not occur as a whole because the transmittance of the transparent conductive material layer is 83% or more. Can be secured. In the present invention, the electrode formed by laminating the transparent conductive material layer and the opaque metal layer has a transmittance of 70% to 50%, thereby preventing chuck stains from occurring while ensuring transmittance.

The liquid crystal display of the present invention and the method of manufacturing the same have an effect of improving the transmittance of the pixel region while preventing the chuck stain by forming electrodes in a double layer structure of a transparent conductive material layer and an opaque metal layer.

The liquid crystal display of the present invention and a method of manufacturing the same have the effect of forming a pixel electrode having a fine width by forming electrodes in a double layer structure of a transparent conductive material layer and an opaque metal layer.

101: gate line 103: data line
105: first common line 170: second common line
160: first pixel electrode 161: second pixel electrode
171: common electrode

Claims (12)

A substrate;
Gate lines and data lines cross-arranged to define pixel regions on the substrate;
A switching element disposed in an intersection region of the gate line and the data line;
A pixel electrode and a common electrode which are alternately arranged in parallel with the data line in the pixel area;
And the pixel electrode and the common electrode have a structure in which a transparent conductive material layer and an opaque metal layer are stacked, and transmittance of the stacked transparent conductive material layer and the opaque metal layer is 70% or less.
The liquid crystal display device of claim 1, wherein an electrode width of the pixel electrode and the common electrode is 3.5 μm or less.
The liquid crystal display device of claim 1, wherein the transparent conductive material layer is any one of ITO, ITZO, and IZO.
The method of claim 1, wherein the opaque metal layer is formed from molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu), chromium (Cr), aluminum (Al), or a combination thereof. Liquid crystal display device characterized in that the metal layer of any one of the alloy (MoTi).
The liquid crystal display of claim 1, wherein a distance between the electrodes of the pixel electrode and the common electrode is 14.3 µm or more.
The liquid crystal display of claim 1, wherein transmittances of the pixel electrode and the common electrode are 70% to 50%.
Providing a substrate;
Forming a metal film on the substrate, and then forming a gate electrode, a gate line, and a first common line according to a first mask process;
Forming a gate insulating film on the substrate on which the gate electrode is formed, and forming a channel layer, a source electrode, a drain electrode, and a data line according to a second mask process;
After forming a protective film on the substrate on which the source electrode and the drain electrode are formed. Performing a contact hole process exposing a part of the drain electrode according to the third mask process;
Forming a transparent conductive material layer and an opaque metal layer on the substrate on which the protective film is formed, and then performing an etching process according to a fourth mask process to form a second common line, a pixel electrode having a plurality of slit bar structures, and a common electrode Including steps
The pixel electrode and the common electrode are formed in a double layer structure in which a transparent conductive material layer and an opaque metal layer are stacked, and the transmittance of the laminated transparent conductive material layer and the opaque metal layer is 70% or less.
The method of claim 7, wherein an electrode width of the pixel electrode and the common electrode is 3.5 μm or less.
The method of claim 7, wherein the pixel electrodes and the common electrodes are alternately disposed in the pixel area, and a distance between the pixel electrode and the common electrode is 14.3 μm or more.
The method of claim 7, wherein the transparent conductive material layer is one of ITO, ITZO, and IZO.
The method of claim 7, wherein the opaque metal layer is formed from molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu), chromium (Cr), aluminum (Al), or a combination thereof. Method of manufacturing a liquid crystal display device, characterized in that the metal layer of any one of the alloy (MoTi).
The method of claim 7, wherein transmittances of the pixel electrode and the common electrode are 70% to 50%.

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