TW201637215A - 功率金氧半導體場效電晶體及其製作方法 - Google Patents
功率金氧半導體場效電晶體及其製作方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 161
- 239000002184 metal Substances 0.000 claims abstract description 161
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910000679 solder Inorganic materials 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 232
- 235000012431 wafers Nutrition 0.000 claims description 80
- 230000005669 field effect Effects 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 56
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 239000011241 protective layer Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000009713 electroplating Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
一種功率金氧半導體場效電晶體包括基材、介電層、多個焊球、第一及第二圖案化金屬層。基材包括主動表面、背面、位於主動表面的源極區與閘極區及位於背面的汲極區。第一圖案化金屬層設置於主動表面並包括源極電極、閘極電極、汲極電極及連接線路。源極及閘極電極電性連接源極及閘極區,連接線路位於基材的邊緣並電性連接汲極電極。介電層設置於主動表面上並暴露第一圖案化金屬層。第二圖案化金屬層包括多個覆蓋源極、閘極及汲極電極的球底金屬層及覆蓋連接線路並延伸至邊緣以電性連接汲極區的連接金屬層。焊球設置於球底金屬層上。
Description
本發明是有關於一種半導體元件及其製作方法,且特別是有關於一種功率金氧半導體場效電晶體及其製作方法。
在現今的半導體裝置中,功率金氧半導體場效電晶體(metal oxide semiconductor field effect transistor,MOSFET)被用在大量電子設備,包括電源、汽車電子、電腦和電池推動裝置如行動電話中。功率金氧半導體場效電晶體可以用於各種各樣的應用,例如將電源連接至具有負荷的特定電子裝置的開關。
功率金氧半導體場效電晶體通過將適當電壓施加至功率金氧半導體場效電晶體的閘極,以導通此裝置而形成連接功率金氧半導體場效電晶體的源極(source)和汲極(drain)的通道,允許電流流動。在功率金氧半導體場效電晶體導通時,電流和電壓之間的關係實質上呈線性關係,使此裝置可當作電阻之用。
一般而言,電晶體(包括功率金氧半導體場效電晶體在內)在導通的狀態下應具有較低的汲極/源極電阻(drain-source
resistance)。垂直式功率金氧半導體場效電晶體就是透過將汲極設置於與源極接點的表面相反的表面上來達到低汲極/源極電阻的功效。將汲極設置於與源極接點相反的表面上可縮短電流的傳導路徑,因而可降低汲極/源極電阻。
然而,利用晶圓級晶片規模封裝(Wafer Level Chip Scale Packaging,WLCSP)來封裝電晶體時,需要將所有接點(包括源極接點、汲極接點和閘極接點)設置於封裝體的相同表面(同一側),如此配置才可將封裝體中連接至各個電晶體端子的表面輕易地利用焊球連接至電路板上。因此,將汲極和汲極接點設置於與源極接點的表面相反的表面會提高功率金氧半導體場效電晶體的封裝難度,因為此配置必須同時對該封裝體的相對兩側提供電性連接。因此,目前業界仍極需一種可使功率金氧半導體場效電晶體維持良好電性效能及低汲極/源極電阻的封裝方法。
本發明提供一種功率金氧半導體場效電晶體及其製作方法,其可提升功率金氧半導體場效電晶體的電性效能。
本發明的功率金氧半導體場效電晶體包括一基材、一第一圖案化金屬層、一圖案化介電層、一第二圖案化金屬層以及多個焊球。基材包括一主動表面、相對主動表面的一背面、一源極區、一閘極區以及一汲極區。源極區以及閘極區位於主動表面,而汲極區位於背面。第一圖案化金屬層設置於主動表面上並包括
一源極電極、一閘極電極、一汲極電極以及一連接線路。源極電極以及閘極電極分別電性連接至源極區以及閘極區。連接線路位於基材的一邊緣並與汲極電極電性連接。圖案化介電層設置於主動表面上並暴露第一圖案化金屬層。第二圖案化金屬層包括多個球底金屬層以及一連接金屬層。球底金屬層分別覆蓋源極電極、閘極電極及汲極電極。連接金屬層覆蓋並連接連接線路並延伸至邊緣以經由邊緣電性連接至汲極區。焊球分別設置於球底金屬層上。
本發明的功率金氧半導體場效電晶體的製造方法包括下列步驟。首先,提供一晶圓。晶圓包括多個晶片。各晶片包括一主動表面、相對主動表面的一背面、一第一圖案化金屬層、一源極區、一閘極區以及一汲極區。第一圖案化金屬層包括一源極電極、一閘極電極、一汲極電極以及一連接線路。源極電極以及閘極電極分別電性連接至位於主動表面的源極區以及閘極區。連接線路位於各晶片的一邊緣並與汲極電極電性連接。汲極區位於背面。接著,形成一圖案化介電層於主動表面上並暴露第一圖案化金屬層。接著,形成一第二圖案化金屬層於第一圖案化金屬層上。第二圖案化金屬層包括多個球底金屬層以及一連接金屬層。球底金屬層分別覆蓋源極電極、閘極電極及汲極電極。連接金屬層覆蓋並連接連接線路並延伸至邊緣以經由邊緣電性連接至汲極區。之後,形成多個焊球於球底金屬層上。
在本發明的一實施例中,上述的功率金氧半導體場效電
晶體更包括一圖案化保護層,設置於主動表面上並暴露第一圖案化金屬層,圖案化介電層設置於圖案化保護層上。
在本發明的一實施例中,上述的功率金氧半導體場效電晶體更包括一種子層,設置於第一圖案化金屬層以及第二圖案化金屬層之間。
在本發明的一實施例中,上述的連接金屬層由邊緣延伸至晶片的一側面,以電性連接至位於背面的汲極區。
在本發明的一實施例中,上述的功率金氧半導體場效電晶體更包括一矽通孔,貫穿基材以連通主動表面以及背面,連接金屬層電性連接矽通孔,以透過矽通孔電性連接至位於背面的汲極區。
在本發明的一實施例中,上述的連接線路的一厚度實質上介於3微米(μm)至5微米。
在本發明的一實施例中,上述的第二圖案化金屬層的一厚度實質上介於8微米至10微米。
在本發明的一實施例中,上述的第二圖案化金屬層的材料包括錫或銀。
在本發明的一實施例中,上述的功率金氧半導體場效電晶體更包括一金屬塗層,覆蓋背面。
在本發明的一實施例中,上述的功率金氧半導體場效電晶體的製作方法,更包括:在形成圖案化介電層於主動表面上之前,形成一圖案化保護層於主動表面上並暴露第一圖案化金屬
層,圖案化介電層覆蓋圖案化保護層。
在本發明的一實施例中,上述的功率金氧半導體場效電晶體的製作方法,更包括:在形成第二圖案化金屬層於第一圖案化金屬層上之前,形成一種子層,種子層覆蓋圖案化介電層以及被圖案化介電層暴露的第一圖案化金屬層。接著,形成一圖案化光阻層於種子層上,圖案化光阻層暴露位於第一圖案化金屬層及其周圍的部分圖案化介電層上的種子層。
在本發明的一實施例中,上述的第二圖案化金屬層形成於被圖案化光阻層暴露的種子層上。
在本發明的一實施例中,上述的功率金氧半導體場效電晶體的製作方法更包括:在形成第二圖案化金屬層於第一圖案化金屬層上之後,移除圖案化光阻層。接著,移除被第二圖案化金屬層所暴露的種子層。
在本發明的一實施例中,上述的功率金氧半導體場效電晶體的製作方法更包括:形成一矽通孔,貫穿基材以連通主動表面以及背面,其中連接金屬層電性連接矽通孔。
在本發明的一實施例中,上述的功率金氧半導體場效電晶體的製作方法,更包括:由背面對晶片進行一減薄製程。
在本發明的一實施例中,上述的減薄製程包括機械研磨。
在本發明的一實施例中,上述的功率金氧半導體場效電晶體的製作方法,更包括:形成一金屬塗層於背面。
在本發明的一實施例中,上述的功率金氧半導體場效電
晶體的製作方法,更包括:對晶圓進行一單體化製程,以形成多個彼此分離的功率金氧半導體場效電晶體。
基於上述,本發明的功率金氧半導體場效電晶體的製作方法利用同一製程同時形成覆蓋閘極電極、源極電極與汲極電極的球底金屬層以及位於晶片的邊緣區且與汲極電極電性連接的連接金屬層。並且,此連接金屬層延伸至晶片的邊緣,以經由此邊緣電性連接至位於晶片的背面的汲極區。如此配置,汲極區可配置於晶片的背面,使汲極區與源極區位於晶片的相對兩表面,縮短電流的傳導路徑,因而可降低汲極/源極電阻。並且,汲極電極可配置於晶片的主動表面,再經由連接線路延伸至晶片的邊緣區,以透過連接金屬層由晶片的邊緣電性連接至位於晶片的背面的汲極區,因而使閘極電極、源極電極與汲極電極皆可配置於晶片的主動表面,以方便功率金氧半導體場效電晶體透過焊球電性連接至一外接電路板上。
並且,用以電性連接汲極電極與汲極區的連接金屬層是
利用與球底金屬層同一電鍍製程而形成,因此無需增加額外的製程步驟。此外,由於連接金屬層是透過電鍍製程而形成,因而相較於透過濺鍍製程所形成的汲極電極以及連接線路(即,第一圖案化金屬層)而具有較厚的厚度,進而可承載較大的電流。因此,利用本發明的功率金氧半導體場效電晶體的製作方法所形成的功率金氧半導體場效電晶體可具有較優異的電性效能。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉
實施例,並配合所附圖式作詳細說明如下。
10、10a‧‧‧晶圓
100、100a‧‧‧功率金氧半導體場效電晶體
110‧‧‧晶片/基材
110a‧‧‧主動區
110b‧‧‧邊緣區
112‧‧‧主動表面
114、114a‧‧‧背面
116‧‧‧汲極區
118‧‧‧磊晶層
119‧‧‧矽通孔
120‧‧‧第一圖案化金屬層
122‧‧‧源極電極
124‧‧‧閘極電極
126‧‧‧汲極電極
128‧‧‧連接線路
130‧‧‧圖案化保護層
140‧‧‧圖案化介電層
150‧‧‧第二圖案化金屬層
152‧‧‧球底金屬層
154‧‧‧連接金屬層
160‧‧‧焊球
170‧‧‧種子層
180‧‧‧圖案化光阻層
190‧‧‧金屬塗層
E1‧‧‧邊緣
圖1A至圖1J是依照本發明的一實施例的一種功率金氧半導體場效電晶體的製作流程示意圖。
圖2是依照本發明的一實施例的對晶圓進行單體化製程的示意圖。
圖3是依照本發明的另一實施例的一種功率金氧半導體場效電晶體的示意圖。
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之各實施例的詳細說明中,將可清楚的呈現。以下實施例中所提到的方向用語,例如:「上」、「下」、「前」、「後」、「左」、「右」等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明,而並非用來限制本發明。並且,在下列各實施例中,相同或相似的元件將採用相同或相似的標號。
圖1A至圖1J是依照本發明的一實施例的一種功率金氧半導體場效電晶體的製作流程示意圖。本實施例的功率金氧半導體場效電晶體的製造方法包括下列步驟:請同時參照圖1A以及圖1B,首先,提供如圖1A所示的一晶圓10。晶圓10包括多個晶片
110,上述的晶片110可例如呈陣列排列。在此需說明的是,為了圖式簡潔以及更清楚地呈現各晶片110的結構,圖1B至圖1J僅繪示晶圓10中單一個晶片110的製作流程的剖面示意圖。各晶片110如圖1B所示包括一主動表面112、相對主動表面112的一背面114、一第一圖案化金屬層120、一源極區、一閘極區以及一汲極區116。第一圖案化金屬層120包括一源極電極122、一閘極電極124、一汲極電極126以及一連接線路128,其中,源極區以及閘極區位於晶片110的主動表面112上,汲極區116則位於晶片110的背面114。源極電極122以及閘極電極124分別電性連接至位於主動表面112的源極區以及閘極區。連接線路128則位於各晶片110的一邊緣E1,並與汲極電極126電性連接。
詳細而言,各晶片110可包括一主動區110a以及一邊緣
區110b,邊緣區110b可例如環繞主動區110a設置,並與主動區110a連接。源極電極122、閘極電極124以及汲極電極126如圖1A所示位於晶片110的主動區110a,而連接線路128則位於晶片的邊緣區110b,並延伸至晶片110的邊緣E1,且連接線路128與汲極電極126電性連接。
此外,在本實施例中,晶片110更可如圖1B所示包括一
圖案化保護層130,其設置於主動表面112上並暴露第一圖案化金屬層120。在本實施例中,第一圖案化金屬層120是透過濺鍍製程而形成,其厚度(也就是源極電極122、閘極電極124、汲極電極126以及連接線路128的厚度)約介於3微米(μm)至5微米之
間。並且,汲極電極126與連接線路128為浮置(floating)線路,也就是說,汲極電極126與連接線路128除了彼此電性連接,並不與其他線路電性連接。
詳細而言,晶片110可包括一基底以及一磊晶層118,基底即可作為汲極區116,其具有第一導電型,磊晶層118形成於汲極區116上並具有第一導電型。在本實施例中,基底例如是具有N型重摻雜之矽基底。磊晶層118例如是具有N型輕摻雜之磊晶層,且其形成方法包括進行選擇性磊晶生長(selective epitaxy growth;SEG)製程。接著,可例如於磊晶層118中形成具有第二導電型的主體層。主體層例如是P型主體層,且其形成方法包括進行離子植入製程與後續的驅入(drive-in)製程。當然,本實施例僅用以舉例說明,本發明並不限定基底、磊晶層以及主體層的導電型態。
在本發明的一實施例中,亦可於形成磊晶層118的步驟
之後以及形成主體層的步驟之前,選擇性地於基底上形成一墊氧化物層。墊氧化物層可以避免進行離子植入製程以形成主體層時造成的穿隧效應(tunneling effect)。墊氧化物層的材料例如是氧化矽,且其形成方法例如是進行熱氧化製程。
接著,請參照圖1C,形成一圖案化介電層140於主動表
面112上。詳細而言,圖案化介電層140是形成並覆蓋於圖案化保護層130上,並暴露第一圖案化金屬層120。之後,形成如圖1D所示的一種子層170。種子層170全面性覆蓋圖案化介電層140
以及被圖案化介電層140所暴露的第一圖案化金屬層120。在本實施例中,形成種子層170的方法可為濺鍍。
接著,請參照圖1E,形成一圖案化光阻層180於種子層170上,其中,圖案化光阻層180如圖1E所示地暴露位於第一圖案化金屬層120及其周圍的部分圖案化介電層140上的種子層170。在本實施例中,圖案化光阻層180可例如具有在曝光之後會呈現裂解狀態的特性(正型感光材料)或可以鍵結的特性(負型感光材料),以透過曝光顯影製程而形成如圖1E所示的圖案化光阻層180。
接著,請參照圖1F,形成一第二圖案化金屬層150於第
一圖案化金屬層120上。詳細而言,第二圖案化金屬層150是以被圖案化光阻層180所暴露的種子層170做為電極進行電鍍製程而形成,因此,第二圖案化金屬層150是形成於被圖案化光阻層180所暴露的種子層170上。在本實施例中,由於第二圖案化金屬層150是透過電鍍而形成,因而相較於透過濺鍍而形成的第一圖案化金屬層120可具有較厚的厚度,也就是說,第二圖案化金屬層150的厚度大於第一圖案化金屬層120的厚度。具體而言,第二圖案化金屬層150的厚度約可介於8微米至10微米,且第二圖案化金屬層的材料包括錫或銀。第二圖案化金屬層150如圖1F所示包括多個球底金屬層152以及一連接金屬層154,其中,球底金屬層152分別覆蓋源極電極122、閘極電極124及汲極電極126,而連接金屬層154則覆蓋並連接連接線路128,並延伸至邊緣E1,
以經由邊緣E1電性連接至晶片110的背面114的汲極區116。如此配置,本實施例透過第二圖案化金屬層150中的連接金屬層154經由邊緣E1而電性連接汲極電極126至晶片110的背面114的汲極區116,由於連接金屬層154的厚度較厚,因而可承載較高的電流,進而可提升功率金氧半導體場效電晶體的電性效能。
在本實施例中,各晶片110的邊緣E1可具有貫孔,而各晶片110上的連接金屬層154可例如由邊緣E1延伸至各晶片的貫孔的側壁內,以經由各貫孔電性連接至晶片110的背面114的汲極區116。舉例而言,貫孔可設置於各晶片之間交界的四個角落。
當然,本實施例並不限制連接金屬層154經由邊緣E1電性連接至晶片110的背面114的汲極區116的方式。
接著,請參照圖1G,移除前述的圖案化光阻層180,以
暴露出下方的種子層。接著,再例如透過蝕刻製程移除未被第二圖案化金屬層150所覆蓋的部分種子層170,換句話說,就是移除被第二圖案化金屬層150所暴露的種子層170。
接著,可如圖1H所示,由晶片110的背面114對晶片110
進行一減薄製程,其中,減薄製程可包括機械研磨。當然,本實施例並不限制減薄晶片110的厚度的方法。之後,可如圖1F所示形成一金屬塗層190於減薄後的晶片110的背面114a,以覆蓋背面114a。當然,若本實施例未對晶片110進行減薄製程,則金屬塗層190可形成於前述的背面114,以覆蓋背面114。之後,再如圖1J所示形成多個焊球160於第二圖案化金屬層150的球底金屬
層152上,以形成如圖1J所示的功率金氧半導體場效電晶體100。
圖2是依照本發明的一實施例的對晶圓進行單體化製程的示意圖。接著,請參照圖2,對完成上述製程之後的晶圓10a進行一單體化製程,以形成多個彼此分離的如圖1J所示的功率金氧半導體場效電晶體100。至此,功率金氧半導體場效電晶體100的製作方法即大致完成。
圖3是依照本發明的另一實施例的一種功率金氧半導體場效電晶體的示意圖。在此必須說明的是,本實施例的功率金氧半導體場效電晶體100a與圖1J的功率金氧半導體場效電晶體100相似,因此,本實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,本實施例不再重複贅述。請參照圖3,以下將針對本實施例的功率金氧半導體場效電晶體100a與圖1J的功率金氧半導體場效電晶體100之間的差異做說明。
本實施例的功率金氧半導體場效電晶體100a的製作方法與功率金氧半導體場效電晶體100的製作方法大致相同,惟其步驟更包括形成一矽通孔119,貫穿晶片110以連通其主動表面112以及背面114,其中,連接金屬層154往晶片110的邊緣E1延伸並電性連接矽通孔119,以透過該矽通孔電性連接至位於該背面的該汲極區。在此情況下,連接金屬層154無需延伸至晶片110的側面,而僅需往晶片110的邊緣E1延伸以與矽通孔119連接,連
接金屬層154即可透過矽通孔119而電性連接至位於背面114的汲極區116。當然,本實施例僅用以舉例說明,本發明並不限制連接金屬層154與汲極區116電性連接的方式。
如此,依上述的製作方法所形成的功率金氧半導體場效
電晶體100/100a可包括一基材110、一第一圖案化金屬層120、一圖案化介電層140、一第二圖案化金屬層150以及多個焊球160。
在此,功率金氧半導體場效電晶體100/100a的基材110即為前述的晶片110,其包括一主動表面112、相對主動表面112的一背面114、一源極區、一閘極區以及一汲極區116。源極區以及閘極區位於主動表面112,而汲極區116位於背面112。第一圖案化金屬層120設置於主動表面112上並包括一源極電極122、一閘極電極124、一汲極電極126以及一連接線路128。源極電極122以及閘極電極124分別電性連接至源極區以及閘極區。連接線路128位於基材110的一邊緣E1並與汲極電極126電性連接。圖案化介電層140設置於主動表面112上並暴露第一圖案化金屬層120。第二圖案化金屬層150包括多個球底金屬層152以及一連接金屬層154。球底金屬層152分別覆蓋源極電極122、閘極電極124及汲極電極126。連接金屬層154覆蓋並連接連接線路128,並延伸至邊緣E1以經由邊緣E1電性連接至汲極區116。在本實施例中,第二圖案化金屬層150的厚度大於第一圖案化金屬層120,以承載較大的電流來電性連接汲極電極126與汲極區116。焊球160則分別設置於球底金屬層152上。
詳細而言,在本實施例中,功率金氧半導體場效電晶體100/100a更可包括一圖案化保護層130以及種子層170,其中,圖案化保護層130設置於主動表面112上並暴露第一圖案化金屬層120,而圖案化介電層140則是設置於圖案化保護層130上。種子層170則設置於第一圖案化金屬層120以及第二圖案化金屬層150之間。
此外,在如圖1J的實施例中,功率金氧半導體場效電晶體100的連接金屬層154可由邊緣E1延伸至基材110的側面,以電性連接至位於基材110的背面114的汲極區116。在如圖3的實施例中,功率金氧半導體場效電晶體100a則更可包括一矽通孔119,其貫穿基材110以連通主動表面112以及背面114,連接金屬層154則往邊緣E1延伸並電性連接矽通孔119,以透過矽通孔119電性連接至位於背面114的汲極區116。當然,上述實施例僅用以舉例說明,本發明並不限制連接金屬層154與汲極區116電性連接的方式。
綜上所述,本發明利用同一電鍍製程同時形成覆蓋閘極電極、源極電極與汲極電極的球底金屬層以及位於晶片的邊緣區且與汲極電極電性連接的連接金屬層,且此連接金屬層延伸至晶片的邊緣,以經由此邊緣電性連接至位於晶片的背面的汲極區。如此配置,汲極區可配置於晶片的背面,使汲極區與源極區位於晶片的相對兩表面,縮短電流的傳導路徑,因而可降低汲極/源極電阻。並且,汲極電極可配置於晶片的主動表面,再經由連接線
路延伸至晶片的邊緣區,以透過連接金屬層由晶片的邊緣電性連接至位於晶片的背面的汲極區,因而使閘極電極、源極電極與汲極電極皆可配置於晶片的主動表面,以方便功率金氧半導體場效電晶體透過焊球電性連接至一外接電路板上。
此外,用以電性連接汲極電極與汲極區的連接金屬層是
利用與球底金屬層同一電鍍製程而形成,因此無需增加額外的製程步驟,並且,由於連接金屬層是透過電鍍製程而形成,因而相較於透過濺鍍製程所形成的汲極電極以及連接線路而具有較厚的厚度,進而可承載較大的電流,因此,利用連接金屬層電性連接汲極電極與汲極區的功率金氧半導體場效電晶體可具有較優異的電性效能。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100‧‧‧功率金氧半導體場效電晶體
116‧‧‧汲極區
122‧‧‧源極電極
124‧‧‧閘極電極
126‧‧‧汲極電極
128‧‧‧連接線路
152‧‧‧球底金屬層
154‧‧‧連接金屬層
160‧‧‧焊球
190‧‧‧金屬塗層
Claims (20)
- 一種功率金氧半導體場效電晶體,包括:一基材,包括一主動表面、相對該主動表面的一背面、一源極區、一閘極區以及一汲極區,該源極區以及該閘極區位於該主動表面,該汲極區位於該背面;一第一圖案化金屬層,設置於該主動表面上並包括一源極電極、一閘極電極、一汲極電極以及一連接線路,該源極電極以及該閘極電極分別電性連接至該源極區以及該閘極區,該連接線路位於該基材的一邊緣並與該汲極電極電性連接;一圖案化介電層,設置於該主動表面上並暴露該第一圖案化金屬層;一第二圖案化金屬層,包括多個球底金屬層以及一連接金屬層,該些球底金屬層分別覆蓋該源極電極、該閘極電極及該汲極電極,該連接金屬層覆蓋並連接該連接線路並延伸至該邊緣以經由該邊緣電性連接至該汲極區;以及多個焊球,分別設置於該些球底金屬層上。
- 如申請專利範圍第1項所述的功率金氧半導體場效電晶體,更包括:一圖案化保護層,設置於該主動表面上並暴露該第一圖案化金屬層,該圖案化介電層設置於該圖案化保護層上。
- 如申請專利範圍第1項所述的功率金氧半導體場效電晶體,更包括一種子層,設置於該第一圖案化金屬層以及該第二圖 案化金屬層之間。
- 如申請專利範圍第1項所述的功率金氧半導體場效電晶體,更包括一矽通孔,設置於該邊緣並貫穿該晶片以連通該主動表面以及該背面,該連接金屬層電性連接該矽通孔,以透過該矽通孔電性連接至位於該背面的該汲極區。
- 如申請專利範圍第1項所述的功率金氧半導體場效電晶體,其中該連接線路的一厚度實質上介於3微米(μm)至5微米。
- 如申請專利範圍第1項所述的功率金氧半導體場效電晶體,其中該第二圖案化金屬層的一厚度實質上介於8微米至10微米。
- 如申請專利範圍第1項所述的功率金氧半導體場效電晶體,其中該第二圖案化金屬層的材料包括錫或銀。
- 如申請專利範圍第1項所述的功率金氧半導體場效電晶體,更包括一金屬塗層,覆蓋該背面。
- 一種功率金氧半導體場效電晶體的製作方法,包括:提供一晶圓,該晶圓包括多個晶片,各該晶片包括一主動表面、相對該主動表面的一背面、一第一圖案化金屬層、一源極區、一閘極區以及一汲極區,該第一圖案化金屬層包括一源極電極、一閘極電極、一汲極電極以及一連接線路,該源極電極以及該閘極電極分別電性連接至位於該主動表面的該源極區以及該閘極區,該連接線路位於各該晶片的一邊緣並與該汲極電極電性連接,該汲極區位於該背面; 形成一圖案化介電層於該主動表面上並暴露該第一圖案化金屬層;形成一第二圖案化金屬層於該第一圖案化金屬層上,該第二圖案化金屬層包括多個球底金屬層以及一連接金屬層,該些球底金屬層分別覆蓋該源極電極、該閘極電極及該汲極電極,該連接金屬層覆蓋並連接該連接線路並延伸至該邊緣以經由該邊緣電性連接至該汲極區;以及形成多個焊球於該些球底金屬層上。
- 如申請專利範圍第9項所述的功率金氧半導體場效電晶體的製作方法,其中各該晶片更包括:一圖案化保護層,設置於該主動表面上並暴露該第一圖案化金屬層,該圖案化介電層覆蓋該圖案化保護層。
- 如申請專利範圍第9項所述的功率金氧半導體場效電晶體的製作方法,更包括:在形成該第二圖案化金屬層於該第一圖案化金屬層上之前,形成一種子層,該種子層覆蓋該圖案化介電層以及被該圖案化介電層暴露的該第一圖案化金屬層;以及形成一圖案化光阻層於該種子層上,該圖案化光阻層暴露位於該第一圖案化金屬層及其周圍的部分該圖案化介電層上的該種子層。
- 如申請專利範圍第11項所述的功率金氧半導體場效電晶體的製作方法,其中該第二圖案化金屬層形成於被該圖案化光阻 層暴露的該種子層上。
- 如申請專利範圍第11項所述的功率金氧半導體場效電晶體的製作方法,更包括:在形成該第二圖案化金屬層於該第一圖案化金屬層上之後,移除該圖案化光阻層;以及移除被該第二圖案化金屬層所暴露的該種子層。
- 如申請專利範圍第9項所述的功率金氧半導體場效電晶體的製作方法,更包括:形成一矽通孔於各該晶片的該邊緣,貫穿各該晶片以連通該主動表面以及該背面,其中該連接金屬層電性連接該矽通孔,以透過該矽通孔電性連接至位於該背面的該汲極區。
- 如申請專利範圍第9項所述的功率金氧半導體場效電晶體的製作方法,其中該連接線路的一厚度實質上介於3微米(μm)至5微米。
- 如申請專利範圍第9項所述的功率金氧半導體場效電晶體的製作方法,其中該連接金屬層的一厚度實質上介於6微米至8微米。
- 如申請專利範圍第9項所述的功率金氧半導體場效電晶體的製作方法,更包括:由該背面對該晶片進行一減薄製程。
- 如申請專利範圍第17項所述的功率金氧半導體場效電晶體的製作方法,其中該減薄製程包括機械研磨。
- 如申請專利範圍第9項所述的功率金氧半導體場效電晶體的製作方法,更包括:形成一金屬塗層於該背面。
- 如申請專利範圍第9項所述的功率金氧半導體場效電晶體的製作方法,更包括:對該晶圓進行一單體化製程,以形成多個彼此分離的功率金氧半導體場效電晶體。
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-
2015
- 2015-04-15 TW TW104112061A patent/TWI690083B/zh active
- 2015-05-12 CN CN201510238800.1A patent/CN106206726A/zh active Pending
- 2015-06-02 US US14/727,872 patent/US9761464B2/en active Active
-
2017
- 2017-07-24 US US15/657,227 patent/US10985032B2/en active Active
Also Published As
Publication number | Publication date |
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CN106206726A (zh) | 2016-12-07 |
US10985032B2 (en) | 2021-04-20 |
US20170323800A1 (en) | 2017-11-09 |
US20160307835A1 (en) | 2016-10-20 |
TWI690083B (zh) | 2020-04-01 |
US9761464B2 (en) | 2017-09-12 |
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