TW201615597A - 陶瓷粉體與其形成方法及雷射燒結成型方法 - Google Patents
陶瓷粉體與其形成方法及雷射燒結成型方法 Download PDFInfo
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Abstract
本揭露提供陶瓷粉體的形成方法,包括:將第一陶瓷粒子、黏結劑、與水混合後之漿料噴霧乾燥,形成第一陶瓷之核心,並熱處理定型第一陶瓷之核心。第一陶瓷之抗折強度介於350MPa至700MPa之間,且第一陶瓷之熱膨脹係數介於7.0×10-6/℃至11.0×10-6/℃之間。混合該第一陶瓷之核心、第二陶瓷之多個粒子、黏結劑、與水後形成漿料;噴霧乾燥漿料,使第二陶瓷之粒子形成第二陶瓷之殼層包覆第一陶瓷之核心,其中第二陶瓷之抗折強度介於50MPa至350MPa之間,且該第二陶瓷之熱膨脹係數介於-1.0×10-6/℃至3.0×10-6/℃之間;以及熱定型處理該第一陶瓷之核心與該第二陶瓷之殼層,以形成陶瓷粉體。上述陶瓷粉體可用於雷射燒結成型方法。
Description
本揭露關於核殼結構之陶瓷粉體,更特別關於其形成方法與採用其之雷射燒結成型方法。
大部分的陶瓷成品都是透過射出成形、壓製成形、刮刀成形、或者是注漿成形後進行高溫燒結。但這些製程需要昂貴的模具及冗長的生產準備時間。若將雷射積層製造技術應用在陶瓷產品上則可降低成本及縮短生產準備時間,但陶瓷材料具有相當高的熔點(例:ZrO2熔點為2700℃),雷射瞬間僅1800~1900℃,因此純的陶瓷粉末難以直接進行液態燒結。換言之,以雷射燒結成型的陶瓷成品不夠緻密且機械強度差。另一方面,陶瓷粉體經雷射區域性快速高溫燒結時,比起傳統爐體整體燒結,需符合更嚴苛的抗熱震要求。若陶瓷材料的抗熱震性能不佳,則成品易產生裂縫而降低成品強度。
綜上所述,目前亟需新的陶瓷材料用於雷射燒結成型方法,以同時達到高產品性質與減少製程成本等需求。
本揭露一實施例提供之陶瓷粉體,包括:第一陶瓷之核心,第一陶瓷之抗折強度介於350MPa至700MPa之間,
且第一陶瓷之熱膨脹係數介於7.0×10-6/℃至11.0×10-6/℃之間;以及第二陶瓷之殼層,包覆該第一陶瓷之核心,第二陶瓷之抗折強度介於50MPa至350MPa之間,且第二陶瓷之熱膨脹係數介於-1.0×10-6/℃至3.0×10-6/℃之間。
本揭露一實施例提供之雷射燒結成型方法,包括:形成陶瓷粉體層,且陶瓷粉體層包括上述之陶瓷粉體;施加雷射至部份陶瓷粉體層,以燒結陶瓷粉體;以及移除未施加雷射之部份陶瓷粉體。
本揭露一實施例提供之陶瓷粉體的形成方法,包括:提供第一陶瓷之核心,其中第一陶瓷之抗折強度介於350MPa至700MPa之間,且第一陶瓷之熱膨脹係數介於7.0×10-6/℃至11.0×10-6/℃之間;混合第一陶瓷之核心、第二陶瓷之多個粒子、第一黏結劑、與水後,形成第二漿料;噴霧乾燥第二漿料,使第二陶瓷之粒子形成第二陶瓷之殼層包覆第一陶瓷之核心,其中第二陶瓷之抗折強度介於50MPa至350MPa之間,且第二陶瓷之熱膨脹係數介於-1.0×10-6/℃至3.0×10-6/℃之間;以及熱定型處理第一陶瓷之核心與第二陶瓷之殼層,以形成陶瓷粉體。
在本揭露一實施例中,申請人提供陶瓷粉體的形成方法如下。首先提供第一陶瓷之核心。第一陶瓷之抗折強度
介於350MPa至700MPa之間,且第一陶瓷之熱膨脹係數介於7.0×10-6/℃至11.0×10-6/℃之間。若第一陶瓷之抗折強度過低,則機械強度不高,無應用價值,無論是應用在製作功能性原型模型,或具生醫相容性客製化醫材等,強度不足都會造成使用上的風險。在本揭露一實施例中,第一陶瓷可為氧化鋁或掺雜氧化釔之氧化鋯。當第一陶瓷為掺雜氧化釔之氧化鋯時,則氧化釔與氧化鋯之莫耳比例介於2.5:100至3.5:100之間。若氧化釔之比例過低或過高,則第一陶瓷之機械強度較低。上述第一陶瓷具有高抗折強度、無毒性、且生物相容性高。不過第一陶瓷之熔點極高(大於2000℃)且抗熱震性不足(成品易產生龜裂)而不適於直接用於雷射燒結成層。
在本揭露一實施例中,提供第一陶瓷之核心的步驟包括:提供第一陶瓷之粒子,且該第一陶瓷之粒子的粒徑介於40nm至5μm之間。若第一陶瓷之粒子的粒徑過小,則粉體成本較高。若第一陶瓷粒子的粒徑過大,可能無法形成適當粒徑之核心。接著混合第一陶瓷之粒子、黏結劑、與水以形成漿料。在本揭露一實施例中,上述混合步驟可採用球磨法。在本揭露一實施例中,黏結劑可為水性高分子如聚乙烯醇(PVA)、聚乙二醇(PEG)、或聚甲基丙烯酸甲酯(PMMA,壓克力)。在本揭露一實施例中,黏結劑之重量百分比約為第一陶瓷粒子的1~3%。若黏結劑之比例過低,則第一陶瓷粒子無法造粒成形預期中所要的粒徑大小。若黏結劑之比例過高,則有機物含量過高,影響後續雷射燒結之效果。在本揭露一實施例中,上述漿料中的第一陶瓷粒子之固體含量介於30%~60%之間。若水之
比例過高,則漿料黏度低,在造粒過程中無法完全乾燥,使得造粒粉體互相黏結、真圓度低、粉體粒徑小等現象。若水之比例過低,則漿料黏度高,在造粒過程中容易造成機台阻塞,粉體造粒效率低。之後噴霧乾燥漿料,使第一陶瓷之粒子聚集成第一陶瓷之核心。接著熱定型處理第一陶瓷之核心。上述熱定型處理的溫度介於1100~1300℃之間。若熱定型溫度過低,則無法使第一陶瓷之核心定型,在後續製程中易粉碎或再聚集成過大或過小的核心。若熱定型溫度過高,則第一陶瓷行燒結反應,晶粒成長粉體間互相黏結,使後續雷射無法再使之燒結。上述製程所形成之第一陶瓷之核心,係由多個第一陶瓷之粒子聚集而成,且核心中的粒子之間具有孔洞。在本揭露另一實施例中,可直接挑選適當尺寸之第一陶瓷粒子作為核心,則核心中不具有孔洞。在本揭露一實施例中,第一陶瓷之核心粒徑介於10μm至20μm之間。若第一陶瓷之核心過小,則粉體流動性差,後續粉體鋪層不緻密,雷射燒結後孔隙率大,成品強度差。若第一陶瓷之核心過大,則雷射難以使之燒結融熔。
接著混合第一陶瓷之核心、第二陶瓷之粒子、黏結劑、與水後,形成另一漿料。在本揭露一實施例中,第二陶瓷之抗折強度介於50MPa至350MPa之間,且第二陶瓷之熱膨脹係數介於-1.0×10-6/℃至3.0×10-6/℃之間。與第一陶瓷相較,第二陶瓷之抗折強度與熱膨脹係數均低於第一陶瓷。若第二陶瓷之抗折強度過低,則拉低整體材料之強度。若第二陶瓷之熱膨脹係數過高,則在雷射瞬間,會因為溫度的急遽變化,造成成品產生裂痕,使成品抗折強度低。若第二陶瓷之熱膨脹係數過
低,則與第一陶瓷的熱膨脹係數差距過大,加熱時體積變化差異大,使第二陶瓷無法完整包覆第一陶瓷。在本揭露一實施例中,第二陶瓷可為Li2O、Al2O3與SiO2所組成或MgO、Al2O3與SiO2所組成。在本揭露一實施例中,第二陶瓷為Li2O(5-40mol%).Al2O3(5-25mol%).SiO2(45-90mol%)如鋰霞石(Li2O.Al2O3.2SiO2)或鋰輝石(Li2O.Al2O3.4SiO2)。在本揭露一實施例中,第二陶瓷為MgO(15-45mol%).Al2O3(5-25mol%).SiO2(45-70mol%)如堇青石(2MgO.2Al2O3.5SiO2)。第二陶瓷具有低熱膨脹特性且抗熱震效果佳。第二陶瓷為均勻成核結晶,燒結後之產品的孔隙度及裂縫小,且具低玻璃轉換溫度。不過第二陶瓷的機械強度(如抗折強度)不如第一陶瓷,且在雷射燒結後即熔融而無法有效積層,因此無法單獨使用於雷射燒結成型。在本揭露一實施例中,第二陶瓷之粒子的粒徑介於1μm至3μm之間。若第二陶瓷之粒子的粒徑過大,則無法緻密包覆第一陶瓷,使真圓度不高或第一陶瓷裸露。
上述混合第一陶瓷之核心、第二陶瓷之粒子、黏結劑、與水之步驟可為球磨製程。在本揭露一實施例中,第一陶瓷之核心與第二陶瓷之粒子的重量比例介於90:10至60:40之間。若第一陶瓷之比例過高,則形成之陶瓷粉體在雷射燒結後的產品具有較大的表面粗糙度與裂縫(寬度超過2μm)。若第二陶瓷之比例過高,則形成之陶瓷粉體在雷射燒結後難以積層。在本揭露一實施例中,黏結劑為水性高分子如聚乙烯醇、聚乙二醇(PEG)、或聚甲基丙烯酸甲酯(PMMA,壓克力)。在本揭露一實施例中,黏結劑之重量約為第一陶瓷之核心與第二陶瓷之
粒子總重量的1%~3%之間。若黏結劑之比例過低,則無法形成核殼結構粉體。若黏結劑之比例過高,則有機物含量過高,影響後續雷射燒結之效果。在本揭露一實施例中,上述漿料中第一陶瓷核心與第二陶瓷粒子之總固含量介於30%~60%之間。若水之比例過高,則漿料黏度低,在造粒過程中無法完全乾燥,使得造粒粉體互相黏結、真圓度低、及粉體粒徑小等現象。若水之比例過低,則漿料黏度高,在造粒過程中容易造成機台阻塞,粉體造粒效率低。
接著噴霧乾燥上述漿料,使第二陶瓷之粒子形成第二陶瓷之殼層包覆第一陶瓷之核心。在本揭露一實施例中,第一陶瓷之核心係由第一陶瓷之粒子聚集而成,則第二陶瓷之粒子可能填入第一陶瓷之粒子之間的部份空隙。之後熱定型處理第一陶瓷之核心與第二陶瓷之殼層,以形成陶瓷粉體。在本揭露一實施例中,熱定型處理的溫度介於1000℃至1100℃之間。若熱定型處理的溫度過高,第二陶瓷會完全融熔無法包覆第一陶瓷粒子。若熱定型處理的溫度過低,則無法使第二陶瓷之殼層定型,在後續製程中易粉碎。最後形成之陶瓷粉體具有核殼結構,且粒徑介於14μm至28μm之間。若陶瓷粉體之粒徑過小,則會降低後續雷射燒結的積層效率。若陶瓷粉體之粒徑過大,則雷射難以將粉體完全燒結融熔。將上述陶瓷粉體壓錠後經由傳統燒結法燒結,所得到塊材做耐熱震測試,可得耐熱震臨界溫差250℃,即上述核殼結構之陶瓷粉體為高耐熱震材料。
本揭露亦提供應用上述陶瓷粉體的雷射燒結成型
方法。首先取上述陶瓷粉體形成陶瓷粉體層,且成層方法可採用刮刀定義陶瓷粉體層的厚度。在本揭露一實施例中,陶瓷粉體層的厚度介於20μm至60μm之間。若陶瓷粉體層過厚,則雷射難以燒結,或層與層之間無法黏結。若陶瓷粉體層過薄,則影響積層效率。接著施加雷射至部份陶瓷粉體層,以燒結陶瓷粉體。接著可重複上述步驟,形成另一陶瓷粉體層於雷射燒結後的陶瓷粉體層上,再雷射燒結部份的另一陶瓷粉體層。重複上述步驟多次後,雷射燒結的部份即積層形成立體圖案,而未照射雷射之陶瓷粉體則可以撥除等方式移除並回收再利用。在本揭露一實施例中,雷射的功率介於3W~30W之間。若雷射的功率過低,則無燒結效果。若雷射的功率過高,則能量高可能將鋪層粉體擊飛而無雷射燒結效果,或完全融熔第二陶瓷殼層使積層效率變差。在本揭露一實施例中,使用二氧化碳雷射(波長約10640nm),陶瓷材料對於此波長有較佳的吸收效果,能有效將光能轉換成熱能使粉體燒結。但整體製程參數,如:掃描速率、雷射功率、能量密度、粉體粒徑…等,都會互相影響,例如:低速率搭配高功率之燒結效果,可能與高速率低功率之燒結效果相同。舉例來說,雷射能量密度可介於150~1400脈衝/英寸之間。經上述雷射燒結成型後的產品,其裂縫寬度介於0至1μm之間。另一方面,單層燒結之表面粗糙度介於約3~5μm,隨著堆疊層數越高其表面粗糙度亦隨之增加。
為了讓本揭露之上述和其他目的、特徵、和優點能更明顯易懂,下文特舉數實施例作詳細說明如下:
實施例
實施例1
依化學計量取Li2CO3(19.24克)、Al2O3(26.02克)、與SiO2(61.61克)及助熔劑(2.54克之B2O3及1.73克之H3PO4)球磨混合後,加熱至100℃將混合粉體乾燥,乾燥後的粉體燒至1300℃以形成Li2O.Al2O3.4SiO2。接著細化上述粉體至粒徑介於1μm至3μm之間,作為後述殼層所用的陶瓷粒子。
取130g之掺雜3mol%之氧化釔之氧化鋯粒子(粒徑為50nm)、2.6g之聚乙烯醇(MW 2,000,購自SCIENTIFIC POLYMER PRODUCTS,INC.)、與130g的水,球磨混合形成漿料,噴霧乾燥漿料使粒子聚集形成核心,再以1200℃熱定型處理核心(粒徑為10μm~20μm)。
取60g之掺雜氧化釔之氧化鋯核心、40g之Li2O.Al2O3.4SiO2粒子、2g之聚乙烯醇(MW 2,000,購自SCIENTIFIC POLYMER PRODUCTS,INC.)、與100g的水,球磨混合形成漿料,噴霧乾燥漿料使Li2O.Al2O3.4SiO2粒子聚集成殼層包覆掺雜氧化釔之氧化鋯核心。接著以1100℃熱定型處理上述之核殼結構的陶瓷粉體(粒徑為約25μm)。
以刮刀將上述核殼結構的陶瓷粉體成層(厚度為40μm),再以二氧化碳雷射(20cm/s,3W)燒結陶瓷粉體層,以表面厚度分析儀量測(ET-3000 Surface Profiler,由Kosaka Laboratory Ltd.所製造)雷射燒結後之陶瓷粉體層之表面粗糙度(Ra 10.59μm),並以掃描式電子顯微鏡(LEO 1530 Field Emission Scanning Electron Microscopy)觀察裂縫寬度(458.3nm)。
比較例1
直接取60g之掺雜3mol%之氧化釔之氧化鋯粒子(粒徑為50nm)、40g之Li2O.Al2O3.4SiO2粒子(粒徑為1~3μm)、2g之聚乙烯醇(MW 2,000,購自SCIENTIFIC POLYMER PRODUCTS,INC.)、與100g的水混合,以刮刀將混合物成層(厚度為40μm)後再以雷射(20cm/s,3W)燒結混合物層,並量測雷射燒結後之混合物層之表面粗糙度(100μm以上)與裂縫寬度(9.648μm)。由比較例1與實施例1之比較可知,由核殼結構之陶瓷粉體所形成之雷射燒結產物,比混合物所形成之雷射燒結產物具有更低的表面粗糙度與較小的裂縫寬度。
實施例2
與實施例1類似,差別在於掺雜氧化釔之氧化鋯核心與Li2O.Al2O3.4SiO2粒子的重量由60g/40g(6/4)改為90g/10g(9/1)。其他用料的重量、熱定型溫度、與雷射燒結參數等等均與實施例1相同。此實施例形成陶瓷粉體粒徑為14μm~28μm,且雷射燒結後的陶瓷粉體層之表面粗糙度為約10μm,且裂縫寬度為約2.141μm。
實施例3
依化學計量取Mg(OH)2(18.94克)、Al2O3(33.11克)、與SiO2(48.45克)及助熔劑(2.54克之B2O3及1.73克之H3PO4)球磨混合後,加熱至100℃將混合粉體乾燥,乾燥後的粉體燒至1300℃以形成2MgO.2Al2O3.5SiO2。接著細化上述粉體至粒徑介於1μm至3μm之間,作為後述殼層所用的陶瓷粒子。
取130g之掺雜3mol%之氧化釔之氧化鋯粒子(粒徑
為50nm)、2.6g之聚乙烯醇(MW2,000,購自SCIENTIFIC POLYMER PRODUCTS,INC.)、與130g的水,球磨混合後形成漿料,噴霧乾燥漿料使粒子聚集形成核心,再以1200℃熱定型處理核心(粒徑為10~20μm)。
取60g之掺雜氧化釔之氧化鋯核心、40g之2MgO.2Al2O3.5SiO2粒子、2g之聚乙烯醇(MW2,000,購自SCIENTIFIC POLYMER PRODUCTS,INC.)、與100g的水,球磨混合後形成漿料,噴霧乾燥漿料使2MgO.2Al2O3.5SiO2粒子聚集成殼層包覆掺雜氧化釔之氧化鋯核心。接著以1100℃熱定型處理上述之核殼結構的陶瓷粉體(粒徑為25μm)。
以刮刀將上述核殼結構的陶瓷粉體成層(厚度為40μm),再以雷射(60cm/s,6W)燒結陶瓷粉體層,並以表面厚度分析儀量測雷射燒結後之陶瓷粉體層之表面粗糙度(28.15μm)與掃描式電子顯微鏡觀察裂縫寬度(小於1μm)。
比較例2
直接取60g之掺雜3mol%之氧化釔之氧化鋯粒子(粒徑為50nm)與40g之2MgO.2Al2O3.5SiO2粒子(粒徑為1~3μm)混合,以刮刀將混合物成層(厚度為40μm)後再以雷射(60cm/s,6W)燒結混合物層,並量測雷射燒結後之混合物層之表面粗糙度(100μm以上)與裂縫寬度(2~10μm)。由比較例2與實施例2之比較可知,由核殼結構之陶瓷粉體所形成之雷射燒結產物,比混合物所形成之雷射燒結產物具有更低的表面粗糙度與較小的裂縫寬度。
雖然本揭露已以數個實施例揭露如上,然其並非
用以限定本揭露,任何本技術領域中具有通常知識者,在不脫離本揭露之精神和範圍內,當可作任意之更動與潤飾,因此本揭露之保護範圍當視後附之申請專利範圍所界定者為準。
Claims (15)
- 一種陶瓷粉體,包括:一第一陶瓷之核心,該第一陶瓷之抗折強度介於350MPa至700MPa之間,且該第一陶瓷之熱膨脹係數介於7.0×10-6/℃至11.0×10-6/℃之間;以及一第二陶瓷之殼層,包覆該第一陶瓷之核心,該第二陶瓷之抗折強度介於50MPa至350MPa之間,且該第二陶瓷之熱膨脹係數介於-1.0×10-6/℃至3.0×10-6/℃之間。
- 如申請專利範圍第1項所述之陶瓷粉體,其中該第一陶瓷之核心與該第二陶瓷之殼層的重量比介於90:10至60:40之間。
- 如申請專利範圍第1項所述之陶瓷粉體,其中該第一陶瓷之核心粒徑介於10μm至20μm之間,且該陶瓷粉體之粒徑介於14μm至28μm之間。
- 如申請專利範圍第1項所述之陶瓷粉體,其中該第一陶瓷包括氧化鋁或掺雜氧化釔之氧化鋯,而該第二陶瓷包括Li2O.Al2O3.2SiO2、Li2O.Al2O3.4SiO2或2MgO.2Al2O3.5SiO2。
- 如申請專利範圍第1項所述之陶瓷粉體,其中該第一陶瓷之核心包括該第一陶瓷之多個粒子聚集而成,且該第一陶瓷之該些粒子的粒徑介於40nm至5μm之間。
- 如申請專利範圍第1項所述之陶瓷粉體,其中該第二陶瓷之殼層包括該第二陶瓷之多個粒子聚集而成,且該第二陶瓷之該些粒子的粒徑介於1μm至3μm之間。
- 一種雷射燒結成型方法,包括:形成一陶瓷粉體層,且該陶瓷粉體層包括申請專利範圍第1項所述之陶瓷粉體;施加一雷射至部份該陶瓷粉體層,以燒結該陶瓷粉體;以及移除未施加該雷射之該陶瓷粉體。
- 如申請專利範圍第7項所述之雷射燒結成型方法,其中該雷射燒結後之該陶瓷粉體層的裂縫寬度介於0至1μm之間。
- 如申請專利範圍第7項所述之雷射燒結成型方法,其中該雷射為波長10640nm的二氧化碳雷射,雷射功率介於3W至30W之間,且雷射能量密度介於150脈衝/英寸至1400脈衝/英寸。
- 一種陶瓷粉體的形成方法,包括:提供一第一陶瓷之核心,其中該第一陶瓷之抗折強度介於350MPa至700MPa之間,且該第一陶瓷之熱膨脹係數介於7.0×10-6/℃至11.0×10-6/℃之間;混合該第一陶瓷之核心、一第二陶瓷之多個粒子、第一黏結劑、與水後,形成一第一漿料;噴霧乾燥該第一漿料,使該第二陶瓷之該些粒子形成該第二陶瓷之殼層包覆該第一陶瓷之核心,其中該第二陶瓷之抗折強度介於50MPa至350MPa之間,且該第二陶瓷之熱膨脹係數介於-1.0×10-6/℃至3.0×10-6/℃之間;以及熱定型處理該第一陶瓷之核心與該第二陶瓷之殼層,以形成該陶瓷粉體。
- 如申請專利範圍第10項所述之陶瓷粉體的形成方法,其中該第一陶瓷之核心的粒徑介於10μm至20μm之間,且該第二陶瓷之該些粒子的粒徑介於1μm至3μm之間。
- 如申請專利範圍第10項所述之陶瓷粉體的形成方法,其中該第一陶瓷之核心與該第二陶瓷之殼層的重量比介於90:10至60:40之間。
- 如申請專利範圍第10項所述之陶瓷粉體的形成方法,其中形成該第一漿料之步驟中,該第一陶瓷之核心與該第二陶瓷之該些粒子之總重與該第一黏結劑之重量比介於100:1至100:3之間,且該第一漿料中該第一陶瓷之核心與該第二陶瓷之該些粒子的總固含量介於30%至60%之間。
- 如申請專利範圍第10項所述之陶瓷粉體的形成方法,其中提供該第一陶瓷之核心的步驟包括:混合該第一陶瓷之多個粒子、第二黏結劑、與水形成一第二漿料,且該第一陶瓷之該些粒子的粒徑介於40nm至5μm之間;噴霧乾燥該第二漿料,使該第一陶瓷之該些粒子聚集成該第一陶瓷之核心;以及熱定型處理該第一陶瓷之核心。
- 如申請專利範圍第14項所述之陶瓷粉體的形成方法,其中形成該第二漿料之步驟中,該第一陶瓷之該些粒子與該第二黏合劑之重量比介於100:1至100:3之間,且該第二漿料中該第一陶瓷之固含量介於30%至60%之間。
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