TW201614742A - Control of warpage using ABF GC cavity for embedded die package - Google Patents
Control of warpage using ABF GC cavity for embedded die packageInfo
- Publication number
- TW201614742A TW201614742A TW104125805A TW104125805A TW201614742A TW 201614742 A TW201614742 A TW 201614742A TW 104125805 A TW104125805 A TW 104125805A TW 104125805 A TW104125805 A TW 104125805A TW 201614742 A TW201614742 A TW 201614742A
- Authority
- TW
- Taiwan
- Prior art keywords
- die
- cavity
- abf
- warpage
- control
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/491,892 US9941219B2 (en) | 2014-09-19 | 2014-09-19 | Control of warpage using ABF GC cavity for embedded die package |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201614742A true TW201614742A (en) | 2016-04-16 |
TWI550730B TWI550730B (zh) | 2016-09-21 |
Family
ID=54258793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104125805A TWI550730B (zh) | 2014-09-19 | 2015-08-07 | 用於嵌入式晶粒封裝之使用abf玻璃布(gc)空腔之翹曲的控制技術 |
Country Status (5)
Country | Link |
---|---|
US (4) | US9941219B2 (zh) |
JP (1) | JP6220828B2 (zh) |
CN (2) | CN108962870B (zh) |
GB (2) | GB2530647B (zh) |
TW (1) | TWI550730B (zh) |
Families Citing this family (9)
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JP6716363B2 (ja) * | 2016-06-28 | 2020-07-01 | 株式会社アムコー・テクノロジー・ジャパン | 半導体パッケージ及びその製造方法 |
JP6780710B2 (ja) * | 2016-12-28 | 2020-11-04 | 株式会社村田製作所 | 回路モジュール |
EP3483921A1 (en) | 2017-11-11 | 2019-05-15 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Embedding known-good component in known-good cavity of known-good component carrier material with pre-formed electric connection structure |
US10847471B2 (en) * | 2018-07-17 | 2020-11-24 | Intel Corporation | Dielectric filler material in conductive material that functions as fiducial for an electronic device |
CN109637981B (zh) * | 2018-11-20 | 2021-10-12 | 奥特斯科技(重庆)有限公司 | 制造部件承载件的方法、部件承载件以及半制成产品 |
US11705389B2 (en) * | 2019-06-11 | 2023-07-18 | Intel Corporation | Vias for package substrates |
JP2020141152A (ja) * | 2020-06-10 | 2020-09-03 | 株式会社アムコー・テクノロジー・ジャパン | 半導体アセンブリおよび半導体アセンブリの製造方法 |
US11552029B2 (en) * | 2020-09-04 | 2023-01-10 | Micron Technology, Inc. | Semiconductor devices with reinforced substrates |
US11728285B2 (en) | 2021-08-26 | 2023-08-15 | Nxp Usa, Inc. | Semiconductor device packaging warpage control |
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JP2002016173A (ja) * | 2000-06-30 | 2002-01-18 | Mitsubishi Electric Corp | 半導体装置 |
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JP2002111226A (ja) | 2000-09-26 | 2002-04-12 | Tdk Corp | 複合多層基板およびそれを用いたモジュール |
JP4271590B2 (ja) | 2004-01-20 | 2009-06-03 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
JP4637677B2 (ja) | 2005-08-09 | 2011-02-23 | 富士フイルム株式会社 | 積層指示装置、多層基板製造システム、及び多層基板製造方法 |
JP2007059689A (ja) * | 2005-08-25 | 2007-03-08 | Shinko Electric Ind Co Ltd | ガラスクロス含有樹脂層を含む構造の積層製品及びその製造方法 |
JP2007059821A (ja) | 2005-08-26 | 2007-03-08 | Shinko Electric Ind Co Ltd | 配線基板の製造方法 |
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KR20140023820A (ko) * | 2012-08-17 | 2014-02-27 | 삼성전기주식회사 | 점착 테이프 및 이를 이용한 기판의 제조 방법 |
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CN103972218B (zh) * | 2014-04-26 | 2016-08-24 | 华进半导体封装先导技术研发中心有限公司 | 集成无源器件扇出型晶圆级封装结构及制作方法 |
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2014
- 2014-09-19 US US14/491,892 patent/US9941219B2/en active Active
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2015
- 2015-07-30 JP JP2015151066A patent/JP6220828B2/ja active Active
- 2015-08-07 TW TW104125805A patent/TWI550730B/zh active
- 2015-08-18 GB GB1514666.5A patent/GB2530647B/en active Active
- 2015-08-18 GB GB1614003.0A patent/GB2540057B/en active Active
- 2015-08-19 CN CN201810833539.3A patent/CN108962870B/zh active Active
- 2015-08-19 CN CN201510511986.3A patent/CN105448867B/zh active Active
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2018
- 2018-04-09 US US15/948,958 patent/US10658307B2/en active Active
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2020
- 2020-04-15 US US16/849,707 patent/US11322457B2/en active Active
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2022
- 2022-04-06 US US17/714,944 patent/US20220230972A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JP6220828B2 (ja) | 2017-10-25 |
TWI550730B (zh) | 2016-09-21 |
US20160086894A1 (en) | 2016-03-24 |
CN105448867A (zh) | 2016-03-30 |
GB2530647A (en) | 2016-03-30 |
US10658307B2 (en) | 2020-05-19 |
US20180301423A1 (en) | 2018-10-18 |
GB2540057B (en) | 2018-05-02 |
GB201514666D0 (en) | 2015-09-30 |
GB2530647B (en) | 2018-05-02 |
CN108962870A (zh) | 2018-12-07 |
US9941219B2 (en) | 2018-04-10 |
US20220230972A1 (en) | 2022-07-21 |
JP2016063214A (ja) | 2016-04-25 |
GB201614003D0 (en) | 2016-09-28 |
US20200251426A1 (en) | 2020-08-06 |
GB2540057A (en) | 2017-01-04 |
US11322457B2 (en) | 2022-05-03 |
CN108962870B (zh) | 2022-10-28 |
CN105448867B (zh) | 2019-06-28 |
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