TW201612488A - System including temperature-controllable stage, semiconductor manufacturing equipment and stage temperature control method - Google Patents

System including temperature-controllable stage, semiconductor manufacturing equipment and stage temperature control method

Info

Publication number
TW201612488A
TW201612488A TW104119467A TW104119467A TW201612488A TW 201612488 A TW201612488 A TW 201612488A TW 104119467 A TW104119467 A TW 104119467A TW 104119467 A TW104119467 A TW 104119467A TW 201612488 A TW201612488 A TW 201612488A
Authority
TW
Taiwan
Prior art keywords
stage
system including
control method
regions
semiconductor manufacturing
Prior art date
Application number
TW104119467A
Other languages
English (en)
Other versions
TWI628408B (zh
Inventor
Tsutomu Hiroki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201612488A publication Critical patent/TW201612488A/zh
Application granted granted Critical
Publication of TWI628408B publication Critical patent/TWI628408B/zh

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F27/00—Control arrangements or safety devices specially adapted for heat-exchange or heat-transfer apparatus
    • F28F27/02—Control arrangements or safety devices specially adapted for heat-exchange or heat-transfer apparatus for controlling the distribution of heat-exchange media between different channels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F13/06—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by affecting the pattern of flow of the heat-exchange media
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of Temperature (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW104119467A 2014-06-27 2015-06-16 包含可控制溫度之載台之系統、半導體製造裝置及載台之溫度控制方法 TWI628408B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014132224A JP6018606B2 (ja) 2014-06-27 2014-06-27 温度制御可能なステージを含むシステム、半導体製造装置及びステージの温度制御方法
JP2014-132224 2014-06-27

Publications (2)

Publication Number Publication Date
TW201612488A true TW201612488A (en) 2016-04-01
TWI628408B TWI628408B (zh) 2018-07-01

Family

ID=54930109

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104119467A TWI628408B (zh) 2014-06-27 2015-06-16 包含可控制溫度之載台之系統、半導體製造裝置及載台之溫度控制方法

Country Status (5)

Country Link
US (1) US10502508B2 (zh)
JP (1) JP6018606B2 (zh)
KR (1) KR101891379B1 (zh)
CN (1) CN105225984B (zh)
TW (1) TWI628408B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
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TWI735124B (zh) * 2019-01-10 2021-08-01 日商科理克股份有限公司 溫度控制系統及溫度控制方法
TWI760547B (zh) * 2017-08-25 2022-04-11 日商東京威力科創股份有限公司 具有冷媒流路的構件、具有冷媒流路的構件之控制方法及基板處理裝置
TWI837172B (zh) * 2018-10-15 2024-04-01 日商東京威力科創股份有限公司 溫度控制系統及溫度控制方法

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GB2551698B (en) * 2016-06-20 2019-01-30 Hs Marston Aerospace Ltd Cleaning of a 3D Printed Article
JP6832132B2 (ja) 2016-11-08 2021-02-24 東京エレクトロン株式会社 供給装置及び基板処理装置
JP6807217B2 (ja) * 2016-11-16 2021-01-06 東京エレクトロン株式会社 ステージ及び基板処理装置
KR101910347B1 (ko) * 2016-12-05 2018-10-23 주식회사 글로벌스탠다드테크놀로지 반도체 제조설비의 고도화 온도제어장치
JP6820206B2 (ja) * 2017-01-24 2021-01-27 東京エレクトロン株式会社 被加工物を処理する方法
US20180374737A1 (en) * 2017-06-23 2018-12-27 Watlow Electric Manufacturing Company High temperature heat plate pedestal
KR101977386B1 (ko) * 2017-06-30 2019-05-13 무진전자 주식회사 웨이퍼 식각 장치 및 이를 사용하는 방법
JP7066438B2 (ja) * 2018-02-13 2022-05-13 東京エレクトロン株式会社 冷却システム
JP7105482B2 (ja) * 2018-04-03 2022-07-25 株式会社ブイ・テクノロジー 石定盤の温度調整装置およびそれを備えた検査装置
JP7093667B2 (ja) 2018-04-11 2022-06-30 東京エレクトロン株式会社 成膜装置及び成膜方法
JP7128023B2 (ja) * 2018-05-01 2022-08-30 株式会社ニシヤマ 温度制御システム、製造装置および検査装置
JP7170449B2 (ja) * 2018-07-30 2022-11-14 東京エレクトロン株式会社 載置台機構、処理装置及び載置台機構の動作方法
JP2020043171A (ja) 2018-09-07 2020-03-19 東京エレクトロン株式会社 温調方法
JP7112915B2 (ja) * 2018-09-07 2022-08-04 東京エレクトロン株式会社 温調システム
CN111321390A (zh) * 2018-12-13 2020-06-23 夏泰鑫半导体(青岛)有限公司 半导体加工系统及其维护方法
JP7232651B2 (ja) * 2019-01-25 2023-03-03 東京エレクトロン株式会社 熱媒体の制御方法および熱媒体制御装置
CN112216585B (zh) * 2019-07-11 2022-12-30 中微半导体设备(上海)股份有限公司 一种等离子体处理器及基座温度控制方法
JP7306195B2 (ja) * 2019-09-27 2023-07-11 東京エレクトロン株式会社 基板を処理する装置及びステージをクリーニングする方法
EP4160673A4 (en) * 2020-05-29 2023-11-22 Tomoegawa Co., Ltd. TEMPERATURE ADJUSTMENT UNIT AND METHOD FOR MANUFACTURING TEMPERATURE ADJUSTMENT UNIT
CN115185317B (zh) * 2022-09-09 2022-12-13 之江实验室 一种负载自适应的宽负载智能高精度温度控制装置
CN116313946B (zh) * 2023-05-24 2023-10-17 长鑫存储技术有限公司 温度调节系统及调节方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI760547B (zh) * 2017-08-25 2022-04-11 日商東京威力科創股份有限公司 具有冷媒流路的構件、具有冷媒流路的構件之控制方法及基板處理裝置
TWI837172B (zh) * 2018-10-15 2024-04-01 日商東京威力科創股份有限公司 溫度控制系統及溫度控制方法
TWI735124B (zh) * 2019-01-10 2021-08-01 日商科理克股份有限公司 溫度控制系統及溫度控制方法
US11797033B2 (en) 2019-01-10 2023-10-24 Kelk Ltd. Temperature control system and temperature control method

Also Published As

Publication number Publication date
CN105225984A (zh) 2016-01-06
KR101891379B1 (ko) 2018-08-24
CN105225984B (zh) 2019-11-22
JP2016012593A (ja) 2016-01-21
US10502508B2 (en) 2019-12-10
JP6018606B2 (ja) 2016-11-02
US20150377571A1 (en) 2015-12-31
KR20160001669A (ko) 2016-01-06
TWI628408B (zh) 2018-07-01

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