JP6807217B2 - ステージ及び基板処理装置 - Google Patents
ステージ及び基板処理装置 Download PDFInfo
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- JP6807217B2 JP6807217B2 JP2016223263A JP2016223263A JP6807217B2 JP 6807217 B2 JP6807217 B2 JP 6807217B2 JP 2016223263 A JP2016223263 A JP 2016223263A JP 2016223263 A JP2016223263 A JP 2016223263A JP 6807217 B2 JP6807217 B2 JP 6807217B2
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- 239000000758 substrate Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 11
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- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 3
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- 239000000919 ceramic Substances 0.000 description 3
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- 230000008859 change Effects 0.000 description 2
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- 238000007599 discharging Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28C—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA COME INTO DIRECT CONTACT WITHOUT CHEMICAL INTERACTION
- F28C3/00—Other direct-contact heat-exchange apparatus
- F28C3/005—Other direct-contact heat-exchange apparatus one heat-exchange medium being a solid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D1/00—Heat-exchange apparatus having stationary conduit assemblies for one heat-exchange medium only, the media being in contact with different sides of the conduit wall, in which the other heat-exchange medium is a large body of fluid, e.g. domestic or motor car radiators
- F28D1/02—Heat-exchange apparatus having stationary conduit assemblies for one heat-exchange medium only, the media being in contact with different sides of the conduit wall, in which the other heat-exchange medium is a large body of fluid, e.g. domestic or motor car radiators with heat-exchange conduits immersed in the body of fluid
- F28D1/04—Heat-exchange apparatus having stationary conduit assemblies for one heat-exchange medium only, the media being in contact with different sides of the conduit wall, in which the other heat-exchange medium is a large body of fluid, e.g. domestic or motor car radiators with heat-exchange conduits immersed in the body of fluid with tubular conduits
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Description
Claims (8)
- 熱交換器と、
前記熱交換器上に設けられ、互いに対向する第1の主面及び第2の主面を有するプレートであり、その板厚方向に延びる複数の貫通孔が形成された、該プレートと、
基板が載置される表面及び裏面を有する静電チャックであり、前記裏面が前記第1の主面に接着された、該静電チャックと、を備え、
前記熱交換器は、
前記複数の貫通孔に対して露出する前記裏面の複数の領域に対面する複数の開口端をそれぞれ提供する複数の第1の管と、
前記複数の貫通孔にそれぞれ連通する複数の第2の管と、
を含む、該熱交換器と、を備え、
前記第1の主面における前記プレートの面積は、前記第1の主面と前記第2の主面との間の前記第1の主面に平行な断面における前記プレートの面積より大きく、
前記静電チャックの前記裏面は、前記複数の貫通孔に対して露出する前記複数の領域と、前記第1の主面に接着層を介して接着された接着領域とを含む、ステージ。 - 前記複数の開口端は、複数の貫通孔の内部にそれぞれ配置されている、請求項1に記載のステージ。
- 前記プレートは、ステンレスから構成されている、請求項1又は2に記載のステージ。
- 前記プレートは、チタン含有材料から構成されている、請求項1又は2に記載のステージ。
- 前記プレートは、アルミニウムから構成されている、請求項1又は2に記載のステージ。
- 前記プレートは、前記複数の貫通孔が形成された第1の領域と、前記第1の領域の外周を囲むように前記第1の領域に連続する第2の領域とを有し、
前記熱交換器は、前記複数の第1の管及び前記複数の第2の管が形成された第1の領域と、前記第1の領域の外周を囲むように前記第1の領域に連続する第2の領域とを有し、
前記プレートの前記第2の領域と前記熱交換器の前記第2の領域との間には、前記プレートの前記第2の領域と前記熱交換器の前記第2の領域との間の隙間を封止するOリングが挟持されている、請求項1〜5の何れか一項に記載のステージ。 - 前記複数の貫通孔が前記第1の主面の側の該複数の貫通孔それぞれの一方の開口と前記第2の主面の側の該複数の貫通孔それぞれの他方の開口との間の途中から該一方の開口に向かって徐々に狭くなるように、前記プレートの表面のうち前記複数の貫通孔を画成する前記プレートの壁面は、前記第1の主面と該壁面との境界を含む一部領域において湾曲している、請求項1〜6の何れか一項に記載のステージ。
- チャンバを提供するチャンバ本体と、
前記チャンバ内に設けられた、請求項1〜7の何れか一項に記載のステージであり、媒体温度調節器から供給される熱交換媒体を前記複数の第1の管から吐出し、該複数の第1の管から吐出された熱交換媒体を前記複数の第2の管を介して前記媒体温度調節器に戻すように構成された該ステージと、を備える基板処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016223263A JP6807217B2 (ja) | 2016-11-16 | 2016-11-16 | ステージ及び基板処理装置 |
KR1020170151482A KR102102027B1 (ko) | 2016-11-16 | 2017-11-14 | 스테이지 및 기판 처리 장치 |
CN201711135746.3A CN108074857A (zh) | 2016-11-16 | 2017-11-16 | 载置台和基板处理装置 |
US15/815,447 US10763764B2 (en) | 2016-11-16 | 2017-11-16 | Stage and substrate processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016223263A JP6807217B2 (ja) | 2016-11-16 | 2016-11-16 | ステージ及び基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018082042A JP2018082042A (ja) | 2018-05-24 |
JP6807217B2 true JP6807217B2 (ja) | 2021-01-06 |
Family
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JP2016223263A Active JP6807217B2 (ja) | 2016-11-16 | 2016-11-16 | ステージ及び基板処理装置 |
Country Status (4)
Country | Link |
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US (1) | US10763764B2 (ja) |
JP (1) | JP6807217B2 (ja) |
KR (1) | KR102102027B1 (ja) |
CN (1) | CN108074857A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US10573532B2 (en) | 2018-06-15 | 2020-02-25 | Mattson Technology, Inc. | Method for processing a workpiece using a multi-cycle thermal treatment process |
JP7024887B2 (ja) * | 2018-11-05 | 2022-02-24 | 株式会社島津製作所 | オートサンプラ |
Family Cites Families (16)
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TW273067B (ja) * | 1993-10-04 | 1996-03-21 | Tokyo Electron Co Ltd | |
JPH09312281A (ja) * | 1996-05-22 | 1997-12-02 | Sony Corp | ウエハ保持用電極体 |
JPH10284382A (ja) * | 1997-04-07 | 1998-10-23 | Komatsu Ltd | 温度制御装置 |
US6965506B2 (en) * | 1998-09-30 | 2005-11-15 | Lam Research Corporation | System and method for dechucking a workpiece from an electrostatic chuck |
JP2003077996A (ja) * | 2001-09-06 | 2003-03-14 | Mitsubishi Heavy Ind Ltd | 静電チャック、及び半導体製造装置 |
KR20030047341A (ko) * | 2001-12-10 | 2003-06-18 | 삼성전자주식회사 | 이온주입장치의 정전척 |
JP4451098B2 (ja) | 2002-08-22 | 2010-04-14 | 住友大阪セメント株式会社 | サセプタ装置 |
US6838646B2 (en) | 2002-08-22 | 2005-01-04 | Sumitomo Osaka Cement Co., Ltd. | Susceptor device |
JP4658913B2 (ja) * | 2006-12-01 | 2011-03-23 | 京セラ株式会社 | ウェハ支持部材 |
JP5382602B2 (ja) * | 2008-03-11 | 2014-01-08 | 住友電気工業株式会社 | ウエハ保持体および半導体製造装置 |
WO2013047555A1 (ja) * | 2011-09-28 | 2013-04-04 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP5996340B2 (ja) * | 2012-09-07 | 2016-09-21 | 東京エレクトロン株式会社 | プラズマエッチング装置 |
JP6374301B2 (ja) * | 2013-12-24 | 2018-08-15 | 東京エレクトロン株式会社 | ステージ、ステージの製造方法、熱交換器 |
US20150332942A1 (en) * | 2014-05-16 | 2015-11-19 | Eng Sheng Peh | Pedestal fluid-based thermal control |
JP6018606B2 (ja) * | 2014-06-27 | 2016-11-02 | 東京エレクトロン株式会社 | 温度制御可能なステージを含むシステム、半導体製造装置及びステージの温度制御方法 |
US10431435B2 (en) * | 2014-08-01 | 2019-10-01 | Applied Materials, Inc. | Wafer carrier with independent isolated heater zones |
-
2016
- 2016-11-16 JP JP2016223263A patent/JP6807217B2/ja active Active
-
2017
- 2017-11-14 KR KR1020170151482A patent/KR102102027B1/ko active IP Right Grant
- 2017-11-16 US US15/815,447 patent/US10763764B2/en active Active
- 2017-11-16 CN CN201711135746.3A patent/CN108074857A/zh active Pending
Also Published As
Publication number | Publication date |
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US10763764B2 (en) | 2020-09-01 |
KR102102027B1 (ko) | 2020-04-20 |
US20180138835A1 (en) | 2018-05-17 |
CN108074857A (zh) | 2018-05-25 |
KR20180055721A (ko) | 2018-05-25 |
JP2018082042A (ja) | 2018-05-24 |
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