TW201606869A - 晶圓之加工方法及中間構件 - Google Patents

晶圓之加工方法及中間構件 Download PDF

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TW201606869A
TW201606869A TW104111929A TW104111929A TW201606869A TW 201606869 A TW201606869 A TW 201606869A TW 104111929 A TW104111929 A TW 104111929A TW 104111929 A TW104111929 A TW 104111929A TW 201606869 A TW201606869 A TW 201606869A
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wafer
component
central region
grinding
bumps
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Karl Priewasser
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Disco Corp
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    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar

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Abstract

本發明的課題是提供一種在保護構件剝離時，不會使膠料或接著劑殘留在凸塊間，並且保護構件的剝離也較容易的晶圓之加工方法。解決手段是一種晶圓之加工方法，該晶圓在表面上具有中央區域及圍繞該中央區域的外周剩餘區域，其中該中央區域配置有複數個各自形成有複數個凸塊的元件，該晶圓之加工方法的特徵為具有中間構件準備步驟、貼附步驟、磨削步驟及剝離步驟。該中間構件準備步驟是準備具有對應於晶圓的該中央區域的柔軟構件，及配置在該柔軟構件的外周緣的接著構件之中間構件。該貼附步驟是透過該接著構件將該中間構件貼附在支撐板上，並且在已貼附於該支撐板上的中間構件上，透過該接著構件以使晶圓的該中央區域抵接於該柔軟構件的狀態來貼附晶圓。該磨削步驟是在實施該貼附步驟後，磨削晶圓的背面。該剝離步驟是在實施該磨削步驟後，將晶圓從該支撐板剝離。

Description

晶圓之加工方法及中間構件 發明領域
本發明是有關於各元件具有複數個凸塊的晶圓之加工方法及在該加工方法中所使用的中間構件。
發明背景
表面上形成有IC、LSI等大量的元件，並且將一個個元件以形成為格子狀的複數條分割預定線(切割道)予以區劃之半導體晶圓，是藉由磨削裝置磨削背面而被加工成預定的厚度後，再藉由切削裝置(切割(Dicing)裝置)切削分割預定線而被分割成一個個元件，被分割的元件廣泛地利用於行動電話、個人電腦等各種電子機器上。
磨削晶圓之背面的磨削裝置，具備有保持晶圓的工作夾台，及將具有用以磨削保持在該工作夾台上的晶圓的磨削磨石之磨削輪裝設成可旋轉的磨削手段，而可以將晶圓高精度地磨削成所期望的厚度。
為了磨削晶圓的背面，因為必須要將形成有大量元件的晶圓表面側吸引保持在工作夾台上，因此通常會在晶圓的表面貼附保護膠帶以免損傷元件(參考例如日本專利特開平5-198542號公報)。
近年來，電子機器有小型化、薄型化的傾向，而 被安裝在內的半導體元件也被要求小型化、薄型化。然而，當磨削晶圓的背面而將晶圓薄化到例如100μm以下、甚至到50μm以下時，會因為剛性顯著地降低而使之後的處理變得非常困難。此外，有時還有在晶圓上產生翹曲，並且因為翹曲而導致晶圓本身破損的疑慮。
為了解決這樣的問題，而採用了晶圓支撐系統 (WSS)。在WSS中，是預先使用接著劑將具有剛性的保護構件貼附在晶圓的表面側之後，再磨削晶圓的背面以將其薄化成預定厚度(參照例如日本專利特開2004-207606號公報)。
先前技術文獻 專利文獻
專利文獻1：日本專利特開平5-198542號公報
專利文獻2：日本專利特開2004-207606號公報
發明概要
然而，要使晶圓能夠不破損地從保護膠帶或WSS的保護構件上剝離是很困難的，特別是近年來，因為晶圓的大口徑化或完成品厚度薄化之傾向，因此要使晶圓沒有破損地從保護構件上剝離就變得較困難。又，將晶圓從保護構件剝離後，也會有膠料或接著劑殘留於元件的表面的問題。
特別是，在各元件上形成有複數個凸塊的晶圓上， 除了因凸塊的凹凸而難以將晶圓平坦地貼附在保護構件上之外，還有導致在凸塊間殘留膠料或接著劑的問題。
本發明是有鑒於這個問題點而作成的發明，其目 的在於提供一種在保護構件剝離時，不會使膠料或接著劑殘留在凸塊間，並且保護構件的剝離也較容易的晶圓之加工方法。
依據請求項1記載的發明，提供一種晶圓之加工方法，該晶圓於表面上具有中央區域及圍繞該中央區域的外周剩餘區域，其中該中央區域配置有複數個各自形成有複數個凸塊的元件。該晶圓之加工方法的特徵在於包括：中間構件準備步驟，準備具有對應於晶圓的該中央區域的柔軟構件，及配置在該柔軟構件的外周緣的接著構件之中間構件；貼附步驟，透過該接著構件將該中間構件貼附在支撐板上，並且在已貼附於該支撐板上的中間構件上，透過該接著構件以使晶圓的該中央區域抵接於該柔軟構件的狀態來貼附晶圓；磨削步驟，在實施該貼附步驟後，磨削晶圓的背面；以及剝離步驟，在實施該磨削步驟後，將晶圓從該支撐板剝離。
依據請求項3記載的發明，提供一種在表面上具 有中央區域及圍繞該中央區域的外周剩餘區域的晶圓之加工方法中使用的中間構件，其中該中央區域配置有複數個各自形成有複數個凸塊的元件。該中間構件的特徵在於具備：對應於晶圓的該中央區域的柔軟構件，及配置在該柔軟構件之外周緣的對應於晶圓之該外周剩餘區域的接著構件。
依據本發明的晶圓之加工方法，可透過所貼附之中間構件將晶圓貼附在支撐板上，且該中間構件具備對應於晶圓的中央區域的柔軟構件，及配置在柔軟構件的外周緣的接著構件。
因此，由於可在不使膠料或接著劑介入晶圓的中央區域的情形下，透過中間構件將晶圓貼附在支撐板上，所以將晶圓從支撐板上剝離時，不會有在凸塊間殘留膠料或接著劑之情形。
因為是藉由配置在柔軟構件之外周緣的接著構件來將晶圓接著在支撐板上，因此要將晶圓從支撐板剝離也很容易。又，因為晶圓是在柔軟構件抵接於晶圓之中央區域的狀態下被貼附於支撐板上，因此可在凸塊的凹凸被柔軟構件所吸收而使晶圓的背面形成平坦化的狀態下被貼附在支撐板上。
11‧‧‧半導體晶圓
11a‧‧‧晶圓表面
11b‧‧‧晶圓背面
11e‧‧‧倒角部
12‧‧‧支撐板
13‧‧‧切割道
14、14A‧‧‧中間構件
15‧‧‧元件
16‧‧‧柔軟構件
17‧‧‧凸塊
18‧‧‧接著構件
19‧‧‧中央區域(凸塊形成區域)
20‧‧‧膠帶
21‧‧‧外周剩餘區域(凸塊未形成區域)
22、50、50A‧‧‧切削單元
24、38、52‧‧‧主軸
26‧‧‧安裝座
28‧‧‧刀具輪
30‧‧‧刀具工具
32、48‧‧‧工作夾台
36‧‧‧磨削單元
40‧‧‧輪座
41‧‧‧螺絲
42‧‧‧磨削輪
44‧‧‧輪基台
46‧‧‧磨削磨石
54‧‧‧切削刀
a、b、A、R1‧‧‧箭頭
F‧‧‧環狀框架
T‧‧‧切割膠帶
圖1是適合實施本發明之加工方法所適合的晶圓之立體圖。
圖2是在貼附步驟中被貼附的晶圓、中間構件，以及支撐板的剖面圖。
圖3(A)是在柔軟構件的全周上配置有接著構件之中間構件的平面圖，圖3(B)是在柔軟構件的外周的複數個位置處配置有接著構件之中間構件的平面圖。
圖4是實施貼附步驟後之晶圓、中間構件，以及支撐板的剖面圖。
圖5(A)是支撐板上貼附有保護膠帶之狀態的剖面圖，圖5(B)是顯示以刀具切削裝置切削保護膠帶而做成平坦化之情形的局部剖面側視圖。
圖6是顯示磨削步驟的立體圖。
圖7是顯示轉移步驟的剖面圖。
圖8(A)、(B)是顯示剝離步驟的第1實施形態之剖面圖。
圖9是顯示剝離步驟的第2實施形態之剖面圖。
用以實施發明之形態
以下，參照圖式詳細說明本發明之實施形態。參照圖1，所示為適合以本發明之加工方法進行加工的半導體晶圓(以下有時僅簡稱為晶圓)11的立體圖。
半導體晶圓11具有表面11a及背面11b，在表面11a上將複數條切割道(分割預定線)13直交而形成，且在藉由切割道13所區劃的各區域中分別形成有元件15。半導體晶圓11是由例如厚度700μm的矽晶圓所構成。
如圖1的放大圖所示，在各元件15的四邊上形成 有複數個突起狀的凸塊17。因為在各元件15的四邊上形成有凸塊17，因此半導體晶圓11具有形成有凸塊17的中央區域(凸塊形成區域)19，及圍繞中央區域19的外周剩餘區域(外周凸塊未形成區域)21。
參照圖2，所示為晶圓11、及貼附在晶圓11的表 面11a的支撐板12以及中間構件14之剖面圖。支撐板12是由例如矽晶圓或玻璃晶圓所構成。
再者，在晶圓11的外周部上形成有從表面到背面 的圓弧狀的倒角部11e，在後續說明的磨削步驟中，當磨削晶圓11的背面11b而將晶圓11形成為預定的厚度時，就會成為因為倒角部11e的一部分而在晶圓11的外周部形成銳利邊緣之情形。作為其對策，較理想的是，至少在實施磨削步驟前，先實施利用切削刀將晶圓11的倒角部11e的一部分去除成圓形之邊緣修整。
中間構件14是由橡膠或海綿橡膠(sponge rubber) 等所形成的柔軟構件16，及配置在柔軟構件16的外周的接著構件18所構成。接著構件18的厚度t1是1~5mm，更理想的是2~3mm左右。接著構件18是由例如接著劑所形成，在稍後將說明的貼附步驟實施後，要對晶圓11進行熱處理的情況中，是選擇具有耐熱性的接著劑作為接著構件18。
如圖3(A)所示，中間構件14是由圓形的柔軟構件 16，與遍及柔軟構件16的整個外周而連續地配置的接著構件18所構成。或是，如圖3(B)所示，中間構件14A是由圓形的柔軟構件16，與配置在柔軟構件16的外周的複數個位置 處的接著構件18所構成。
在本發明的晶圓之加工方法中，準備了中間構件 14之後，如圖4所示，會實施貼附步驟，其為透過接著構件18將中間構件14貼附在支撐板12上，並且在貼附於支撐板12上的中間構件14上以使晶圓11的中央區域(凸塊形成區域)19抵接於柔軟構件16的狀態，透過接著構件18將晶圓11貼附在中間構件14。藉由實施此貼附步驟，晶圓11會成為僅透過配置在中間構件14之外周的接著構件18而被貼附在支撐板12上。
較理想的是，實施磨削晶圓11的背面11b之磨削 步驟之前，為了取得晶圓11的背面11b之精密度，如圖5(A)所示，宜在支撐板12上貼附由基材與膠層所構成的膠帶20。
貼附膠帶後，是如圖5(B)所示，以刀具切削裝置 切削膠帶20而做成平坦化。在圖5(B)中，22是刀具切削裝置的刀具切削單元，包含有被旋轉驅動的主軸24、固定在主軸24的前端的安裝座26，及可裝卸地裝設在安裝座26上之刀具輪28。在刀具輪28上，於前端可裝卸地安裝有具有由鑽石所形成之刀刃的刀具工具30。
在膠帶20的平坦化步驟中，是以刀具切削裝置的 工作夾台32吸引保持晶圓11以使膠帶20露出。並且，在將刀具工具30定位在切入膠帶20預定深度的高度位置處之後，一邊使刀具輪28以例如約2000rpm旋轉並且使工作夾台32以預定的進給速度朝箭頭A方向移動，一邊以刀具工具30 迴轉切削膠帶20。
在此迴轉切削時，工作夾台32是在不旋轉的情形 下朝箭頭A方向加工進給。實施膠帶20的平坦化步驟後，可得到晶圓11的背面11b和膠帶20的表面之間的充分的平行度。
然而，在已透過中間構件14將晶圓11貼附在支撐 板12上時，在可充分確保支撐板12的支撐面(下表面)與晶圓11的背面11b的平行度的情況下，就未必一定要在支撐板12上貼附膠帶20。
實施圖4所示之貼附步驟後，或是實施圖5(B)所 示之膠帶平坦化步驟後，可實施磨削晶圓11的背面11b之磨削步驟。在磨削步驟中，如圖6所示，是以磨削裝置的工作夾台48吸引保持支撐板12，使晶圓11的背面11b露出。
在圖6中，磨削單元36包含有被旋轉驅動的主軸 38、固定在主軸38前端的輪座40，以及藉由複數個螺絲41可裝卸地裝設在輪座40上之磨削輪42。磨削輪42是由環狀的輪基台44，以及於輪基台44的下端外周部固接成環狀的複數個磨削磨石46所構成。
在磨削步驟中，是在使工作夾台48朝箭頭a所示 方向以例如300rpm旋轉時，使磨削輪42朝箭頭b所示方向以例如6000rpm旋轉，並且驅動圖未示的磨削單元進給機構以使磨削輪42的磨削磨石46接觸晶圓11的背面11b。
然後，以預定的磨削進給速度使磨削輪42朝下方 磨削進給預定量。以接觸式或非接觸式的厚度測量計，一 邊測量晶圓11的厚度，一邊將晶圓11磨削至預定的厚度(例如100μm)。
再者，此磨削步驟並不限定於圖6所示的實施形 態，也可以做成使用大約為晶圓11的半徑左右的磨削輪磨削對應於晶圓11的中央區域19之背面11b以形成圓形凹部，並使對應於外周剩餘區域21的背面殘留，而形成圍繞圓形凹部的環狀的凸部。
實施磨削步驟後，為確保後續的操作性，較理想 的是，如圖7所示，實施將晶圓11的背面11b貼附在外周部被貼附於環狀框架F上的切割膠帶T上的轉移步驟。
實施轉移步驟後，實施從支撐板12剝離晶圓11 的剝離步驟。在此剝離步驟的第1實施形態中，如圖8(A)所示，透過切割膠帶T以圖未示的工作夾台吸引保持晶圓11，並且以切削單元50切削除去中間構件14的接著構件18。切削單元50包含有配置在鉛直方向上的主軸52，及裝設在主軸52的前端部之切削刀54。
在剝離步驟的第1實施形態中，是將朝箭頭A方 向高速旋轉的切削刀54從側邊切入中間構件14的接著構件18，並藉由使圖未示的工作夾台朝箭頭R1方向低速旋轉，來切削除去接著構件18。除去接著構件18後，可如圖8(B)所示，將支撐板12與柔軟構件16一起從貼附在切割膠帶T上的晶圓11上剝離。
接著，參照圖9，針對剝離步驟的第2實施形態進 行說明。本實施形態的剝離步驟中，是使用具有朝水平方 向延伸的主軸52之一般的切削單元50A。
讓朝箭頭A方向高速旋轉的切削刀54在支撐板 12的外周部上切入到接著構件18的下端部附近，並藉由使圖未示的工作夾台朝箭頭R1方向低速旋轉，將接著構件18與支撐板12的外周部一起切削除去。
藉此，可以與圖8(B)所示之情形相同，將支撐板 12和柔軟構件16一起從貼附在切割膠帶T上的晶圓11上除去。
11‧‧‧半導體晶圓
11b‧‧‧晶圓的背面
12‧‧‧支撐板
14‧‧‧中間構件
16‧‧‧柔軟構件
17‧‧‧凸塊
18‧‧‧接著構件

Claims (3)

  1. 一種晶圓之加工方法，該晶圓於表面上具有中央區域及圍繞該中央區域的外周剩餘區域，其中該中央區域配置有複數個各自形成有複數個凸塊的元件，該晶圓之加工方法的特徵為具有以下步驟：中間構件準備步驟，準備中間構件，該中間構件具有對應於晶圓的該中央區域的柔軟構件、及配置在該柔軟構件的外周緣的接著構件；貼附步驟，透過該接著構件將該中間構件貼附在支撐板上，並且在已貼附於該支撐板上的中間構件上，透過該接著構件以使晶圓的該中央區域抵接於該柔軟構件的狀態來貼附晶圓；磨削步驟，在實施該貼附步驟後，磨削晶圓的背面；以及剝離步驟，在實施該磨削步驟後，將晶圓從該支撐板剝離。
  2. 如請求項1的晶圓之加工方法，還具備轉移步驟，該轉移步驟是在實施前述磨削步驟之後且在實施前述剝離步驟之前，將晶圓貼附在外周部被貼附於環狀框架的切割膠帶上。
  3. 一種中間構件，是在表面上具有中央區域及圍繞該中央區域的外周剩餘區域的晶圓之加工方法中使用，其中該晶圓的中央區域配置有複數個各自形成有複數個凸塊 的元件，該中間構件之特徵在於具備：對應於晶圓的該中央區域的柔軟構件；及配置在該柔軟構件之外周緣的對應於晶圓之該外周剩餘區域的接著構件。
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