TW201602409A - 使用錯合Co2+金屬離子還原劑之連續鉑層的無電鍍沉積 - Google Patents
使用錯合Co2+金屬離子還原劑之連續鉑層的無電鍍沉積 Download PDFInfo
- Publication number
- TW201602409A TW201602409A TW104110609A TW104110609A TW201602409A TW 201602409 A TW201602409 A TW 201602409A TW 104110609 A TW104110609 A TW 104110609A TW 104110609 A TW104110609 A TW 104110609A TW 201602409 A TW201602409 A TW 201602409A
- Authority
- TW
- Taiwan
- Prior art keywords
- solution
- concentrated stock
- platinum
- stock solution
- electroless plating
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/166—Process features with two steps starting with addition of reducing agent followed by metal deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/168—Control of temperature, e.g. temperature of bath, substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1683—Control of electrolyte composition, e.g. measurement, adjustment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
- H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/243,793 US9499913B2 (en) | 2014-04-02 | 2014-04-02 | Electroless deposition of continuous platinum layer using complexed Co2+ metal ion reducing agent |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201602409A true TW201602409A (zh) | 2016-01-16 |
Family
ID=54209249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104110609A TW201602409A (zh) | 2014-04-02 | 2015-04-01 | 使用錯合Co2+金屬離子還原劑之連續鉑層的無電鍍沉積 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9499913B2 (https=) |
| JP (1) | JP2015196904A (https=) |
| KR (1) | KR20150114914A (https=) |
| TW (1) | TW201602409A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9469902B2 (en) * | 2014-02-18 | 2016-10-18 | Lam Research Corporation | Electroless deposition of continuous platinum layer |
| LT6547B (lt) | 2016-12-28 | 2018-08-10 | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | Platinos cheminio nusodinimo tirpalas ir platinos tolydžios dangos formavimo būdas |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3698939A (en) * | 1970-07-09 | 1972-10-17 | Frank H Leaman | Method and composition of platinum plating |
| US4279951A (en) * | 1979-01-15 | 1981-07-21 | Mine Safety Appliances Company | Method for the electroless deposition of palladium |
| JPS591667A (ja) * | 1982-05-20 | 1984-01-07 | ゼネラル・エレクトリツク・カンパニイ | シリコンに対する白金の無電解めつき法 |
| JPH04325688A (ja) | 1991-04-26 | 1992-11-16 | Murata Mfg Co Ltd | 無電解めっき浴 |
| JP3116637B2 (ja) | 1993-03-12 | 2000-12-11 | 株式会社村田製作所 | 無電解めっき液 |
| JP3455709B2 (ja) * | 1999-04-06 | 2003-10-14 | 株式会社大和化成研究所 | めっき方法とそれに用いるめっき液前駆体 |
| US20020152955A1 (en) * | 1999-12-30 | 2002-10-24 | Yezdi Dordi | Apparatus and method for depositing an electroless solution |
| DE10048844A1 (de) * | 2000-10-02 | 2002-04-11 | Basf Ag | Verfahren zur Herstellung von Platinmetall-Katalysatoren |
| JP4171604B2 (ja) * | 2002-03-18 | 2008-10-22 | 株式会社大和化成研究所 | 無電解めっき浴及び該めっき浴を用いて得られた金属被覆物 |
| US8298325B2 (en) * | 2006-05-11 | 2012-10-30 | Lam Research Corporation | Electroless deposition from non-aqueous solutions |
| US8632628B2 (en) * | 2010-10-29 | 2014-01-21 | Lam Research Corporation | Solutions and methods for metal deposition |
| US9469902B2 (en) * | 2014-02-18 | 2016-10-18 | Lam Research Corporation | Electroless deposition of continuous platinum layer |
| US20150307995A1 (en) * | 2014-04-29 | 2015-10-29 | Lam Research Corporation | ELECTROLESS DEPOSITION OF CONTINUOUS PALLADIUM LAYER USING COMPLEXED Co2+ METAL IONS OR Ti3+ METAL IONS AS REDUCING AGENTS |
-
2014
- 2014-04-02 US US14/243,793 patent/US9499913B2/en active Active
-
2015
- 2015-04-01 JP JP2015074711A patent/JP2015196904A/ja active Pending
- 2015-04-01 TW TW104110609A patent/TW201602409A/zh unknown
- 2015-04-02 KR KR1020150046792A patent/KR20150114914A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US9499913B2 (en) | 2016-11-22 |
| US20150284857A1 (en) | 2015-10-08 |
| JP2015196904A (ja) | 2015-11-09 |
| KR20150114914A (ko) | 2015-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104851837B (zh) | 连续铂层的无电沉积 | |
| KR102509652B1 (ko) | Tsv들 (through silicon vias) 내로 구리의 전착을 위한 니켈 라이너 및 코발트 라이너의 전처리 | |
| KR102134929B1 (ko) | 전해질에서 양이온들을 제어할 때 반도체 웨이퍼를 전기 도금하는 방법 및 장치 | |
| KR102468093B1 (ko) | 구리 전기도금을 향상시키는 방법 | |
| US7405163B1 (en) | Selectively accelerated plating of metal features | |
| CN105008587A (zh) | 化学镀铜溶液 | |
| KR102452723B1 (ko) | 환원제로서 착화된 티타늄 3가 금속 양이온들을 사용하는 연속적인 코발트층의 무전해 디포지션 | |
| TWI606760B (zh) | Circuit board processing method and printed circuit board manufactured by the method | |
| TW201602409A (zh) | 使用錯合Co2+金屬離子還原劑之連續鉑層的無電鍍沉積 | |
| TW201606128A (zh) | 使用錯合Co2+金屬離子或Ti3+金屬離子做為還原劑之連續鈀層的無電鍍沉積 | |
| TW201903202A (zh) | 使用氫之逐層沉積 | |
| KR102137300B1 (ko) | 철 붕소 합금 코팅들 및 그것의 제조 방법 | |
| JP5884122B1 (ja) | 塩化銅の製造方法 | |
| JP2015196904A5 (https=) | ||
| US20150307994A1 (en) | ELECTROLESS DEPOSITION OF CONTINUOUS NICKEL LAYER USING COMPLEXED Ti3+ METAL IONS AS REDUCING AGENTS | |
| KR20110076448A (ko) | 탄화물 세라믹 열판 및 그 제조방법 | |
| JP5772133B2 (ja) | 湿式エッチング方法 | |
| JP2016130363A (ja) | めっき装置 | |
| TW201326465A (zh) | 用於蝕刻銅及銅合金的水性組合物 |