TW201602371A - 用於接合應用之粗銅線的製造方法 - Google Patents
用於接合應用之粗銅線的製造方法 Download PDFInfo
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- TW201602371A TW201602371A TW104115090A TW104115090A TW201602371A TW 201602371 A TW201602371 A TW 201602371A TW 104115090 A TW104115090 A TW 104115090A TW 104115090 A TW104115090 A TW 104115090A TW 201602371 A TW201602371 A TW 201602371A
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- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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Abstract
本發明係關於一種用於製造包含具有表面之核心之接合線之方法,其中該核心包含□98.0%銅且具有在7500μm2至600000μm2範圍內之橫截面積及在40N/mm2至95N/mm2範圍內之彈性極限RP0.2(屈服強度),該方法包含以下步驟:(a)提供銅核心前體;(b)牽拉該前體直至達到該線核心之最終直徑為止;(c)在650℃至1000℃範圍內之最小退火溫度下在其整個橫截面上將該經牽拉線退火並持續在4秒至2小時範圍內之最小退火時間。
Description
本發明係關於粗銅接合線之製造方法。
使用接合線來製造半導體裝置以用於在半導體裝置製作期間使積體電路及印刷電路板電互連。另外,將接合線用於電力電子應用中以電連接電晶體、二極體及諸如此類與外殼之墊或插針。儘管最初自金來製備接合線,但當前使用較便宜材料,例如銅。儘管銅線提供極良好之電及熱傳導性,但銅線之球接合以及楔接合具有難題。另外,銅線易於氧化。
就線幾何形狀而言,最常用者係具有圓形橫截面之接合線及具有大致矩形橫截面之接合帶。兩種類型之線幾何形狀皆具有使其可用於具體應用之優點。因此,兩種幾何形狀類型均已在市場中佔有份額。舉例而言,接合帶具有用於給定橫截面積之較大接觸面積。然而,帶彎曲受限且在接合時必須觀察到帶定向以在帶與所接合元件之間達成可接受電接觸。轉向接合線,該等接合線可更靈活地彎曲。
然而,接合涉及線在接合製程中之焊接及較大變形,此可引起危害或甚至破壞所接合元件之接合墊及下伏電結構。
對於本發明,術語接合線包含橫截面之所有形狀。藉由本發明方法製得之接合線之尺寸係就粗接合線而言。在接合線之本發明意義下,認為粗線係橫截面積在7500μm2至600000μm2或12000μm2至
600000μm2範圍內之線。在具有圓形橫截面之線之實例中,該線可具有在98μm至510μm或125μm至510μm範圍內之直徑。為達成足夠之生產量及可靠性,與細接合線相比,粗接合線之機械性質及接合性能包含具體要求。
一些最新研發涉及具有銅核心之接合線。作為核心材料,因高導電性而選擇銅。已尋找銅材料之不同摻雜劑以最佳化接合性質。舉例而言,US 7,952,028 B2闡述若干具有大量不同摻雜劑及各種濃度之基於銅之不同測試線。然而,就接合線本身及接合製程而言,持續需要進一步改良接合線技術。
因此,本發明之目標係提供改良之接合線之製造方法。
因此,本發明之另一目標係提供具有良好加工性質且在互連時並無特定需要由此節約成本之接合線之製造方法。
本發明之一目標亦係提供具有極佳電及熱傳導性之接合線之製造方法。
本發明之再一目標係提供展現改良之可靠性之接合線之製造方法。
本發明之再一目標係提供展現極佳接合性之接合線之製造方法。
本發明之另一目標係提供顯示關於球接合之改良之接合性之接合線之製造方法。
本發明之另一目標係提供在接合之前線核心顯示增加之柔軟性之接合線之製造方法。
本發明之另一目標係提供具有改良之抗腐蝕性及/或抗氧化性之接合線之製造方法。
令人吃驚地,發現藉由本發明方法製得之線可解決至少一個上述目標。另外,發現包含藉由本發明方法製得之線之系統及模組在該
線與其他電元件(例如印刷電路板、墊/插針等)之間之界面處更為可靠。
本發明係關於包含具有表面之核心之接合線之製造方法,其中該核心包含98.0%銅且具有在7500μm2至600000μm2範圍內之橫截面積及在40N/mm2至95N/mm2範圍內之彈性極限RP0.2(屈服強度),該方法包含以下步驟:(a)提供銅核心前體;(b)牽拉該前體直至達到該線核心之最終直徑為止;(c)在650℃至1000℃範圍內之最小退火溫度下遍及其整個橫截面使所牽拉線退火在4秒至2小時、較佳4秒至1小時範圍內之最小退火時間。
在一個實施例中,可以靜態或動態退火方法實施退火且然後最小退火時間可在4秒至2小時、較佳4秒至1小時範圍內,而假使退火係以動態方式(即隨著移動線)實施,則最小退火時間可在4秒至30秒範圍內。
若並未提供其他具體定義,則組份之所有含量或份數在本文中皆係以重量份數形式給出。特定而言,以百分比形式給出之份數應理解為重量-%,且以ppm(百萬份數)形式給出之份數應理解為重量-ppm。
如藉由本發明方法製得之該線就其機械及接合性質進行最佳化。在本發明之更佳實施例中,線核心或線之彈性極限RP0.2為90N/mm2且最佳85N/mm2。彈性極限RP0.2之下限為較佳40N/mm2且最佳50N/mm2。此尤其導致由本發明方法製得之接合線之屈服強度之較佳且有利的範圍。如藉由本發明方法製得之接合線較佳具有在範圍40N/mm2至95N/mm2、50N/mm2至95N/mm2、40N/mm2至90N/mm2或50N/mm2至90N/mm2中一或多者中之彈性極限
RP0.2。在極佳實施例中,核心或線之彈性極限RP0.2係在65N/mm2至90N/mm2或65N/mm2至85N/mm2範圍內。
線或核心之彈性極限與屈服強度相同。對於彈性極限或屈服強度之定義而言,參照常用理解。在工程及材料科學中,材料之「屈服強度」定義為材料開始塑性變形時之應力。在開始塑性變形之前,材料將發生彈性變形且在去除所施加應力時將返回其原始形狀。目前,彈性極限或屈服強度係藉由使用塑性變形之0.2%偏位屈服點(RP0.2)來定義。
彈性極限應理解為如作為完成且包裝之產品提供之接合線之性質。另外,應瞭解,未將過多儲存時間、環境影響或諸如此類施加於該線上。接合線之彈性極限係以其在進給至接合工具中之前之狀態給出。
應指出,任何機械應力、彎曲、加熱、長期儲存時間或諸如此類可影響線之微觀結構及其彈性極限。舉例而言,在剛離開退火爐後之線與和封裝狀態之成品相同之線之彈性極限之間通常存在顯著差異。
應理解,線之彈性極限可尤其藉由相應地選擇退火程序之參數來調整。根據本發明,此不一定意指使該線退火達伸長率值之最大值,此乃因其在先前技術中甚為常見。替代地,選擇線之退火程序及其他參數(銅純度、添加劑等)以達成本發明之彈性極限值。
線核心定義為表面下方之本體材料之均質區域。因任一本體材料基本上具有在一定程度上擁有不同性質之表面區域,故線核心之性質應理解為此本體材料區域之性質。本體材料區域之表面可在形態、組成(例如氧含量)或其他特徵方面有所不同。在較佳實施例中,表面可為線之外表面。在其他實施例中,線核心之表面可經提供作為線核心與疊置於線核心上之塗層之間的界面區域形式。
特定而言,線係用於微電子裝置中之接合之接合線。線較佳係一體式物體。
若組份之份數超過參考材料之所有其他組份,則此組份係「主要組份」。較佳地,主要組份佔材料總重量之50%。
核心之銅含量為98.0%。甚至更佳,銅含量為99%。進一步較佳,線核心係由純度為99.9%之銅(3N-銅)組成。最佳,線核心係由純度為99.99%之銅(4N銅)組成。純銅線通常展示良好傳導性及良好接合性質。在替代實施例中,線核心中可提供小量之其他元素。該等元素之實例包括Pd、Ag或B。
在本發明之通常較佳態樣中,線在退火之後之伸長率值係在最大伸長率值之40%至92%範圍內。更佳,伸長率值係在最大伸長率值之45%至85%範圍內,且最佳在50%至80%範圍內。
在又一較佳情形下,在高於藉由退火達成最大伸長率值之溫度10℃之溫度下使線退火。更佳地,溫度為超過最大伸長率之溫度50℃且最佳,溫度為超過最大伸長率之溫度80℃。經常,溫度為超過最大伸長率之溫度150℃。因此,線可在超過最大伸長率之溫度10℃至150℃或50℃至150℃或80℃至150℃之溫度下退火。
最大伸長率值定義如下:在基於銅之接合線之一般情形下,可藉由最終退火步驟來調整線伸長率。此態樣中之「最終」意指其後並無確立之對線形態具有重大影響之產生步驟。在選擇退火參數時,通常選擇一組參數。在線退火之簡單情形下,在給定長度之爐中調整恆定溫度,其中使線以恆定速度通過爐。此將線之每一點暴露於一定溫度下給定時間,此溫度及此退火時間係退火程序之兩個相關參數。在其他情形下,可使用爐之具體溫度剖面,由此向系統增加其他參數。
在任一情形下,可選擇一個參數作為變量。然後,取決於此變量之線之所接受伸長率值得到通常具有局部最大值之圖形。此定義為
線在本發明意義中之最大伸長率值。在變量為退火溫度之情形下,該圖形通常稱為「退火曲線」。
在先前技術中,通常使任一線退火達關於變量參數之該最大伸長率值,此乃因局部最大值之存在提供尤其穩定之製造條件。
對於本發明而言,令人吃驚地,結果顯示,退火達小於最大伸長率值之不同值可得到有益線性質,此乃因可以正性方式影響線形態。若選擇退火溫度作為變量參數,且將退火時間設定為恆定值,則退火溫度選擇為高於最大伸長率之退火溫度之值尤其有益。特定而言,可使用此製造原理將線之平均粒度調整至(例如)較大粒度。藉由此調整,可以正性方式影響其他性質,例如線柔軟性、楔接合性能等。
為提供良好生產量及有效退火,在退火步驟(c)期間在其核心整個橫截面上將其加熱至650℃之最小退火溫度。甚至更佳,此溫度為680℃。在退火步驟(c)期間在其核心整個橫截面上將其加熱至1000℃之退火溫度。因此,在退火步驟(c)期間在其核心整個橫截面上將其加熱至在650℃至1000℃或680℃至1000℃範圍內之溫度。
在一尤佳實施例中,藉由股線退火實施退火,從而使得快速產生具有高再現性之線。股線退火意指,在使線移動穿過退火爐並在離開爐之後纏繞於捲上時以動態方式進行退火。
在較佳實施例中,以包裝形式提供線,且該方法進一步包含(d)在步驟(c)後輸送並封裝線之步驟,其中使線以曲率半徑Rc彎曲,其中Rc等於0.25.(1/E-1).Dr,或簡而言之0.25.Dr/E,其中Dr係定義為在曲率半徑之方向上量測之線直徑,其中E係因彎曲導致的線之外部細絲之相對伸長率;且其中E為0.006。在更佳實施例中,E為0.005或0.004且最佳E為0.003。通常,E為0.0002。該程序確保線之最佳化微觀結構且因此其機械性質未因最後輸送、纏繞及封
裝過程之影響而降格。藉由該等措施,避免在藉由退火步驟(c)調整其微觀結構之後線遭受不利的機械應力。具體而言,線在退火後之強彎曲或其他強變形將對其晶體之大小及分佈具有負面影響。此包括僅線之外部部分受到影響而線之機械性質整體上可仍在本發明範圍內的影響。
線之細絲係定義為與線之幾何中心線平行並以距其之恆定距離延伸之具有無限小直徑之理論細絲。因此,上文意義下之外部細絲係在具有最大曲率半徑之位置沿線核心表面延伸之細絲。
線彎曲之限制尤其係針對其中將線提供於捲上之包裝形式。取決於線直徑,封裝捲之最小直徑需要根據上文所給參數來提供。此外,應注意,當處置線時不能超過該最小彎曲半徑。該處置包含製造線以及在接合工具中進給並輸送線之程序。
在又一較佳實施例中,在退火步驟(c)後已直接將藉由本發明方法製得之線纏繞至封裝捲上。此意味,在纏繞至最終封裝捲上之前不將線纏繞至中間捲上。結果顯示,纏繞線之任何程序對其微觀結構及機械性質具有影響,此乃因任一該程序皆將線置於機械應力下。即使使用具有大直徑之中間捲,此亦在一定程度上確係如此。
由於封裝線軸之直徑定義上文所解釋意義下之線之最小曲率半徑,故本發明亦係關於提供如根據本發明所製造並封裝於線軸上之線,其中封裝線軸滿足上文針對曲率半徑所給出之參數。
對於藉由本發明方法製得之具有圓形橫截面之線,亦觀測到微觀結構之不尋常性質。該等結構可能與良好接合性質相關。因此,對於較佳線而言,線之第二區域(R2)之平均粒度與線之第一區域(R1)之平均粒度之比率為0.05至0.8、較佳0.05中0.7且更佳0.1至0.6。線之第一區域(R1)係藉由線距線之幾何中心線之距離10%最小直徑之所有點來界定,且其中線之第二區域(R2)係藉由線距核心表面之距離
10%最小直徑之所有點來界定。線之最小直徑係界定為垂直並穿過其幾何中心線橫跨線之最短可能直徑。
已利用電子回散射繞射術(EBSD)實施平均粒度之量測。將各段線包埋於樹脂中並研磨在其中心線之方向上穿過線之縱切面。對線之截面積進行拋光並進一步藉由離子碾磨來製備。對線之微觀質地進行若干量測。藉由該等量測,已測定線之晶粒之大小及分佈。
令人吃驚地,結果顯示,晶粒之平均大小在靠近線表面之邊界區域中顯著小於在靠近線之中心線之中心區域中之平均大小。平均粒度似乎自線之中心開始在徑向向外方向上快速降低。粒度之先前已知分佈顯示平均粒度均勻分佈或平均粒度隨距線中心之距離增加而增加。
在該等方法之可能進一步研發中,提供(e)在牽拉前體之步驟(b)之前或之後利用塗層材料塗覆銅核心之步驟。塗覆方法之實例係電鍍、物理氣相沈積及化學氣相沈積。在本發明之該進一步研發中,將塗層疊置於核心表面上。應理解,該塗層係藉由本發明方法製得之線之可能而非必需之特徵。為最小化該塗層之材料對接合方法之影響,塗層厚度為0.5μm,且更佳0.2μm。通常,塗層厚度為20nm。
在提供塗層之情形下,該層包含貴金屬、Ti、Ni或Cr之群中之一者作為主要組份。用於塗覆目的之貴金屬之尤佳實例係Pd、Au、Pt及Ag。
本發明意義下之術語「疊置」用於闡述第一物項(例如銅核心)相對於第二物項(例如塗層)之相對位置。其他物項(例如中間層)可能配置於第一物項與第二物項之間。較佳地,相對於第一物項之總表面,第二物項至少部分地疊置於第一物項上,例如至少30%、50%、70%或90%。最佳地,第二物項完全疊置於第一物項上。本發明背景中之
術語「中間層」係線在銅核心與塗層之間之區域。在此區域中,核心中之材料以及塗層中之材料組合存在。
在本發明之可能實施例中,提供塗層作為中間層,其中將至少一個外層疊置中間層上。在該情形下,外層較佳包含至少一種貴金屬作為主要組份。特定而言,該貴金屬可為Au或Pd。在最佳組合中,分別地,中間層包含Pd且外層包含Au作為主要組份。
在提供外層之情形下,中間層具有在5nm至100nm範圍內之較佳厚度。
在一較佳實施例中,線具有圓形橫截面形狀,其中在橫截面積上之最短路徑與最長路徑之間之比率係介於0.8與1.0之間。該線係稱為具有圓形橫截面之線。
在另一較佳實施例中,線形狀像條帶,其中在橫截面積上之最短路徑與最長路徑之間之比率係介於0.02與0.5之間。
根據該等要求,本發明方法可進一步包含以下步驟:(f)在步驟(c)之前將線輥製成條帶形狀。此確保,將圓形線成形為條帶不影響最終線之微觀結構。
所有測試及量測皆在T=20℃及50%之相對濕度下實施。
當量測晶粒之平均粒度時,本文中使用電子回散射繞射術(EBSD)。儘管EBSD係可測定不同晶粒之定向之方法,但出於本發明目的使用該方法僅量測粒徑。
已藉由標準程序進行楔接合方法之量測。業內已知接合線之方法窗面積之定義且廣泛用於比較不同線。下文所闡述之藉由本發明方法製得之線之所有實施例已顯示優良接合性質。
藉由實例來進一步例示本發明。該等實例用於實例性闡明本發明且並不意欲以任一方式限制本發明或申請專利範圍之範圍。
將一定量之99.99%純度之銅材料(「4 N銅」)在坩堝中熔化。並不向熔體中添加其他物質。然後自熔體澆注線核心前體。
使用感應偶合電漿(ICP)儀器(Perkin Elmer ICP-OES 7100DV)控制Cu線之化學組成。將Cu線溶於濃硝酸中且將溶液用於ICP分析。設備製造商根據用於本體Cu之熟知技術來確立測試高純Cu線之方法。
然後在若干個牽拉步驟中牽拉線核心前體以形成具有指定直徑之線核心2。此線具有幾乎為圓形之橫截面,其中最長與最短直徑之比率係介於0.8與1.0之間。
為證實用於不同直徑之本發明之有益效應,製造所選具有不同直徑之線。下表1顯示在製造方法之不同步驟處不同線直徑之量測數據之列表:
數據之解釋:TS1:剛離開退火爐之線之抗拉強度;EL1:剛離開退火爐之線之伸長率;YS1:剛離開退火爐之線之屈服強度;TS2:在纏繞至封裝捲上後線之抗拉強度;EL2:在纏繞至封裝捲上後線之伸長率;YS2:在纏繞至封裝捲上後線之屈服強度。
注意到,在本發明意義下之線之屈服強度為以上數據之「YS2」,此乃因此涉及成品。利用在輸送及纏繞期間對線之其他機械影響解釋YS1與YS2之結果間之顯著差異。退火程序後之此線處置之最佳化可減少此處所見之屈服強度增加。
在製造線之本發明程序中,在離開退火爐後將線先纏繞至中間
捲上。然後,將線再纏繞至封裝捲上。此增加值YS1與YS2之間之差異。在製造程序之較佳變體中,將線直接纏繞至封裝捲上。
為最小化由纏繞引起之機械應力,所用捲以及所有導向輥具有最小直徑以保持線之彎曲半徑超過最小值。較佳最小彎曲半徑或曲率半徑隨線直徑而增加。
此曲率半徑Rc等於0.25.(1/E-1).Dr,其中-Dr係定義為在曲率半徑方向上量測之線直徑;-E係因彎曲導致的線之外部細絲之相對伸長率由彎曲;且-E為0.006。
在本發明實例,E經選擇小至0.002。此意味,例如,300μm線(樣品編號1)之捲之直徑經選擇為10cm(=5cm曲率半徑)。此係指參數E=0.0015:5cm=0.25 * 0.03cm/0.0015
在製造配置中,具有最小彎曲半徑之物項(捲,導輥等)主要界定線在退火後之機械應力。因此,較佳使所有捲及輥具有相同半徑,並儘可能最小化其數量。
此外應注意,線之抗拉強度TS1、TS2在很大程度上不受本文所闡述措施影響。根據本發明之具體退火或由退火後之封裝程序導致之機械應力以顯著方式改變此線性質。
下表2顯示表1之線之股線退火所用退火參數之更多細節:
自表2顯而易見,藉由改變線輸送速度使用股線退火來改變退火
時間。
除退火時間以外,退火溫度可能有所改變。
下表3顯示不涉及本發明之比較實例。在該等實例中,利用不同退火參數使線之相同基礎材料退火。在每一情形下,改變退火參數,直至達成在退火爐後直接量測之最大伸長率值EL1max為止。對於該等線而言,給出在退火爐後直接量測之值TS1及YS1(參見表1之以上解釋)。
成品之屈服強度值YS2顯著高於藉由本發明方法製得之線。對於比較線中任一者而言,屈服強度值皆不低於對於成品而言之100N/mm2。
關於藉由本發明方法製得之線之退火程序,參照圖5。此圖顯示300μm線之退火曲線。在此曲線中,在不同溫度下實施退火,而退火時間保持恆定。量測剛離開退火爐之伸長率值EL1並相對於退火溫度進行展示。
在股線退火之本發明方法中,自線速度及爐長度之值計算退火時間。應理解,藉由本發明方法製得之線不限於股線退火。
通常情況下,退火曲線呈現局部最大值,其在此位於約600℃下。應理解,最大伸長率值之退火溫度亦取決於退火時間。
圖5中展示兩個退火窗口A及B。第一窗口A在局部最大值周圍對稱配置且係指根據先前技術之接合線退火。傳統上使用在局部最大值處或在其附近之此類型退火,此乃因其給出良好方法穩定性及再現性。
利用來自第二退火窗口B之參數使藉由本發明方法製得之線退火。此窗口係配置在退火曲線之較高末端尾周圍。當伸長率降至最大伸長率值EL1max之92%時,界定窗口B之下溫度邊界。藉由欲獲得之屈服強度下限界定窗口B之上溫度邊界。應指出,該上溫度邊界可視線在退火程序後遭受之機械應力而有所不同,從而有助於屈服強度之增加。
在其他實驗中,量測並評估藉由本發明方法製得之線之晶體微觀結構。圖6顯示上述樣品編號3線(300μm直徑)之晶粒結構。沿中心線將線樣品切片。展示兩個不同區域R1及R2,其中第一區域R1係配置於中心線附近。
第二區域R2係配置於線表面下方。每一區域之徑向寬度皆為線直徑之10%。
自所展示之晶粒結構顯而易見,中心區域R1中之平均粒度顯著大於近表面區域R2中之平均粒度。量測之評估給出在中心區域R1中25μm之平均粒度。表面區域R2中之平均粒度為11μm。不同區域中之該等平均粒度之比率為11μm/25μm=0.44。
接合測試已顯示,藉由本發明方法製得之線顯示優良接合性質。此外,線在接合工具中之處置及接合方法穩定性因線之高柔軟性而增加。
作為本發明之第二實例,製造呈條帶形式之接合線。根據上述第一實例實施所有製造步驟,在退火步驟之前使線核心平坦化之其他步驟除外。藉由輥製線來達成線之平坦化。所得條帶之最短直徑對其最長直徑之比率為0.1。其最短直徑為100μm,且其最長直徑為1000μm,橫截面積大概為100,000μm2。
應注意,對於條帶而言之封裝產品之退火程序及YS2之調整值與
對於上述圓形線而言者相同。關於欲遵守之最小曲率半徑,繞其較短直徑有規律地纏繞條帶,且由此此直徑係用於選擇捲及導輥之直徑之相關參數。
1‧‧‧線
2‧‧‧銅核心
3‧‧‧塗層
10‧‧‧電裝置
11‧‧‧連接元件
15‧‧‧表面
23‧‧‧中心
L‧‧‧直線
本發明之標的物例示於各圖中。然而,各圖並不意欲以任一方式限制本發明或申請專利範圍之範圍。
在圖1中,繪示線1。
圖2顯示線1之橫截面視圖。在橫截面視圖中,銅核心2位於橫截面視圖之中部。銅核心2由塗層3環繞。在銅線2之邊界上,定位銅核心之表面15。在穿過線1之中心23之直線L上,銅核心2之直徑顯示為直線L與表面15之交叉點之間的端至端距離。線1之直徑為穿過中心23之直線L與線1外邊界之交叉點之間的端至端距離。另外,繪示塗層3之厚度。塗層3之厚度在圖2中係放大的。若提供塗層3,則其典型厚
度與核心直徑相比極小,例如小於核心直徑之1%。
應理解,線1之塗層3係可選的。對於最佳實施例而言,在線核心上並不提供塗層。
圖3顯示製造本發明線之方法。
圖4繪示呈電裝置10形式之模組,其包含兩個元件11及線1。線1電連接兩個元件11。虛線意指連接元件11與環繞元件11之封裝裝置之外部線路之其他連接或電路。元件11可包含接合墊、引腳、積體電路、LED或諸如此類。
圖5顯示由無塗層之4N-銅核心組成之粗線之退火曲線。標記先前技術之一個退火窗口及根據本發明實例之一個退火窗口。
圖6顯示對穿過根據本發明製得之線之縱切面之EBSD量測。線具有300μm直徑之圓形橫截面。
1‧‧‧線
2‧‧‧銅核心
3‧‧‧塗層
15‧‧‧表面
23‧‧‧中心
L‧‧‧直線
Claims (15)
- 一種用於製造接合線之方法,該接合線包含具有表面之核心,其中該核心包含98.0%銅且具有在7500μm2至600000μm2範圍內之橫截面積及在40N/mm2至95N/mm2範圍內之彈性極限RP0.2(屈服強度),該方法包含以下步驟:(a)提供銅核心前體;(b)牽拉該前體直至達到該線核心之最終直徑為止;(c)在650℃至1000℃範圍內之最小退火溫度下在其整個橫截面上使該經牽拉線退火並持續在4秒至2小時範圍內之最小退火時間。
- 如請求項1之方法,其中該退火係股線退火。
- 如請求項1或2之方法,其中在超過最大伸長率之溫度10℃至150℃之溫度下使該線退火。
- 如請求項1、2或3之方法,其進一步包含(d)在步驟(c)後輸送並封裝該線之步驟,其中使該線以曲率半徑Rc彎曲,其中Rc等於0.25.Dr/E,其中Dr係定義為在該曲率半徑之方向上量測之該線之直徑;其中E係因該彎曲導致的該線之外部細絲之相對伸長率;且其中E在0.0002至0.006範圍內。
- 如前述請求項中任一項之方法,其中該方法進一步包含以下步驟:(e)在步驟(b)之前或之後利用塗層材料塗覆該銅核心,以將塗層疊置於該核心之該表面上。
- 如請求項5之方法,其中該塗層具有20nm至0.5μm之厚度。
- 如請求項5或6之方法,其中該塗層包含貴金屬、Ti、Ni或Cr之群中之一者作為主要組份。
- 如請求項5至7中任一項之方法,其中該塗層經提供作為中間層,其中至少一個外層疊置於該中間層上。
- 如請求項8之方法,其中該外層包含貴金屬作為主要組份。
- 如請求項8或9之方法,其中該中間層具有在5nm至100nm範圍內之厚度。
- 如前述請求項中任一項之方法,其進一步包含以下步驟:(f)在步驟(c)之前將該線輥製成條帶形狀。
- 如請求項1至10中任一項之方法,其中該線具有圓形橫截面形狀,其中在該橫截面積上之最短路徑與最長路徑之間之比率係介於0.8與1.0之間。
- 如請求項11之方法,其中在該橫截面積上之最短路徑與最長路徑之間之比率係介於0.02與0.5之間。
- 如前述請求項中任一項之方法,其中該線展現該線之第二區域(R2)之平均粒度與該線之第一區域(R1)之平均粒度之比率為0.05至0.8,其中該線之該第一區域(R1)係藉由該線距該線之幾何中心線之距離10%最小直徑之所有點來界定,且 其中該線之該第二區域(R2)係藉由該線距該核心之該表面之距離10%最小直徑之所有點來界定。
- 如前述請求項中任一項之方法,其中該線具有最大伸長率值之40%至92%之退火後伸長率值。
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TW104115090A TWI579392B (zh) | 2014-07-11 | 2015-05-12 | 用於接合應用之粗銅線的製造方法 |
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US (1) | US20170200534A1 (zh) |
EP (1) | EP3167482B1 (zh) |
JP (2) | JP2017520121A (zh) |
CN (1) | CN106471143A (zh) |
HU (1) | HUE055485T2 (zh) |
TW (1) | TWI579392B (zh) |
WO (1) | WO2016005068A1 (zh) |
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SG10201600329SA (en) * | 2016-01-15 | 2017-08-30 | Heraeus Materials Singapore Pte Ltd | Coated wire |
EP3588035A1 (en) * | 2018-06-28 | 2020-01-01 | Heraeus Nexensos GmbH | A wire bonding arrangement and method of manufacturing a wire bonding arrangement |
US12088029B2 (en) * | 2021-07-20 | 2024-09-10 | Dell Products L.P. | Cable termination for information handling systems |
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JPS6220858A (ja) * | 1985-07-19 | 1987-01-29 | Hitachi Ltd | ボンデイングワイヤ、その製造方法およびそれを用いた半導体装置 |
JP2001176913A (ja) * | 1999-12-17 | 2001-06-29 | Tanaka Electronics Ind Co Ltd | 半導体素子用ワイヤの製造方法 |
US20070235887A1 (en) * | 2003-10-20 | 2007-10-11 | Shingo Kaimori | Bonding Wire and Integrated Circuit Device Using the Same |
JP2007250750A (ja) * | 2006-03-15 | 2007-09-27 | Nippon Steel Materials Co Ltd | 収容容器及びワイヤボンディング装置 |
JP5038765B2 (ja) * | 2006-12-14 | 2012-10-03 | 日立電線株式会社 | 太陽電池用はんだめっき線及びその製造方法 |
CN102842539B (zh) * | 2007-07-24 | 2015-06-24 | 新日铁住金高新材料株式会社 | 半导体装置用接合线 |
JP4904252B2 (ja) * | 2007-12-03 | 2012-03-28 | 新日鉄マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
KR101057271B1 (ko) * | 2008-01-25 | 2011-08-16 | 가부시키가이샤 닛데쓰 마이크로 메탈 | 반도체 장치용 본딩 와이어 |
KR20090095719A (ko) * | 2008-03-06 | 2009-09-10 | 헤라우스오리엔탈하이텍 주식회사 | 본딩 와이어 |
WO2011013527A1 (ja) * | 2009-07-30 | 2011-02-03 | 新日鉄マテリアルズ株式会社 | 半導体用ボンディングワイヤー |
DE102010031993B4 (de) * | 2010-07-22 | 2015-03-12 | Heraeus Materials Technology Gmbh & Co. Kg | Verfahren zur Herstellung eines Bonddrahtes, Bonddraht und Baugruppe, die einen solchen Bonddraht aufweist. |
JP6019547B2 (ja) * | 2011-07-21 | 2016-11-02 | 日立金属株式会社 | 銅ボンディングワイヤ |
JP6032455B2 (ja) * | 2011-09-29 | 2016-11-30 | 高周波熱錬株式会社 | インターコネクタ用銅線の焼鈍方法 |
JP2013102054A (ja) * | 2011-11-08 | 2013-05-23 | Mitsubishi Cable Ind Ltd | 太陽電池用リード線 |
SG190482A1 (en) * | 2011-12-01 | 2013-06-28 | Heraeus Materials Tech Gmbh | Doped 4n copper wire for bonding in microelectronics device |
JP5786042B2 (ja) * | 2012-01-25 | 2015-09-30 | 日鉄住金マイクロメタル株式会社 | ボンディングワイヤ及びその製造方法 |
EP2662890B1 (en) * | 2012-05-07 | 2019-07-03 | Heraeus Deutschland GmbH & Co. KG | Method for making an aluminium coated copper bond wire |
JP2014112581A (ja) * | 2012-12-05 | 2014-06-19 | Nippon Micrometal Corp | ボンディングワイヤ及びボンディングリボン |
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- 2015-04-28 US US15/325,338 patent/US20170200534A1/en not_active Abandoned
- 2015-04-28 EP EP15721617.7A patent/EP3167482B1/en active Active
- 2015-04-28 JP JP2016574220A patent/JP2017520121A/ja active Pending
- 2015-04-28 CN CN201580037653.XA patent/CN106471143A/zh active Pending
- 2015-04-28 HU HUE15721617A patent/HUE055485T2/hu unknown
- 2015-05-12 TW TW104115090A patent/TWI579392B/zh not_active IP Right Cessation
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WO2016005068A1 (en) | 2016-01-14 |
EP3167482A1 (en) | 2017-05-17 |
EP3167482B1 (en) | 2021-07-14 |
JP2019091916A (ja) | 2019-06-13 |
US20170200534A1 (en) | 2017-07-13 |
TWI579392B (zh) | 2017-04-21 |
JP6762386B2 (ja) | 2020-09-30 |
JP2017520121A (ja) | 2017-07-20 |
CN106471143A (zh) | 2017-03-01 |
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