JP6032455B2 - インターコネクタ用銅線の焼鈍方法 - Google Patents
インターコネクタ用銅線の焼鈍方法 Download PDFInfo
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- JP6032455B2 JP6032455B2 JP2011215137A JP2011215137A JP6032455B2 JP 6032455 B2 JP6032455 B2 JP 6032455B2 JP 2011215137 A JP2011215137 A JP 2011215137A JP 2011215137 A JP2011215137 A JP 2011215137A JP 6032455 B2 JP6032455 B2 JP 6032455B2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 58
- 238000000137 annealing Methods 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 83
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 230000006698 induction Effects 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000007747 plating Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000005485 electric heating Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0016—Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/34—Methods of heating
- C21D1/40—Direct resistance heating
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/34—Methods of heating
- C21D1/42—Induction heating
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
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- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Heat Treatment Of Strip Materials And Filament Materials (AREA)
- Heat Treatment Of Articles (AREA)
Description
特許文献2:特開2009−27096号公報
特許文献3:特開2009−280898号公報
特許文献4:特開2010−141050号公報
加熱時間に関し、特許文献4は、加熱時間を5秒から60秒とすることを開示する。加熱時間を短くする場合には、短時間に導体に十分な熱エネルギーを与えるために、加熱温度を高くすることが当然に考えられる。しかし、特許文献4には、加熱温度を高くしても、加熱時間が短いと、0.2%耐力の低減効果が十分でないことが記載されており、30秒以上の加熱時間が好ましいことが示されている。
なお、焼鈍処理は、銅の酸化を防止するために、窒素や希ガスから選ばれる不活性ガス雰囲気下で行うのが好ましい。
たとえば、加熱温度が600℃の場合、0.2%耐力値は、80MPa以上になってしまう。1020℃の場合、加熱時間が5秒を超えると、伸び値が急速に低減する。
図1は、銅線に通電して焼鈍処理を行う装置の概略図である。以下、本発明において、外部トランスタイプの通電加熱装置という。
銅線Lの送り通路入口側及び出口側には、補助ロール1と導電性ロール2とが銅線Lを挟んで対向して配置されている。導電性ロール2には、低周波電源3及びトランス4が接続されており、導電性ロール2を介して通電され、銅線Lが加熱される。
加熱時間は、銅線Lの送り通路入口側から出口側までの距離と銅線Lの移動速度とにより制御される。加熱温度は、トランス4からの出力電流、出力電圧のいずれか又は双方により制御される。
銅線Lは、加熱コイル5の内部を貫通し、銅線Lの送り通路入口側及び出口側で、補助ロール1と導電性ロール2とに挟まれて配置されている。加熱コイル5には、高周波電源6が接続されており、電磁誘導作用によって、加熱コイル5内では、銅線Lに渦電流が誘起され、銅線Lは発熱し加熱される。
加熱時間は、加熱コイル5の幅Wと銅線Lの移動速度とによって、制御される。加熱温度は、高周波電源6からの出力電流、出力電圧のいずれか又は双方により制御される。
銅線Lの送り通路入口側及び出口側には、補助ロール1と導電性ロール2とが銅線Lを挟んで対向して配置され、銅線Lの送り通路入口側と出口側との間には、低周波電源3を接続したリングトランス7が配置され、2つの導電性ロール2は、導電線8で接続されてショートしている。銅線Lに誘起された電圧により、導電性ロール2及び銅電線8を通して銅線Lに通電される。
加熱時間は、銅線Lの送り通路入口側から出口側までの距離と銅線Lの移動速度とにより制御される。加熱温度は、低周波電源3からの出力電流、出力電圧のいずれか又は双方により制御される。
加熱温度600℃、加熱時間0.5、3及び5秒(参考例1〜3)、
加熱温度650℃、加熱時間0.5、3及び5秒(実施例1〜3)、
加熱温度800℃、加熱時間0.5、3及び5秒(実施例4〜6)、
加熱温度900℃、加熱時間0.5、3及び5秒(実施例7〜9)、
加熱温度1000℃、加熱時間0.3、3及び5秒(実施例10〜12)、
加熱温度1020℃、加熱時間0.3、3及び5秒(実施例13〜15)、
加熱温度1020℃、加熱時間10秒(参考例4)。
1:補助ロール
2:導電性ロール
3:低周波電源
4:トランス
5:加熱コイル
6:高周波電源
7:リングトランス
8:導電線
Claims (3)
- 銅線を650℃以上1020℃以下かつ0.3秒以上3秒以下のたわみの発生しない条件で通電加熱又は誘導加熱する、インターコネクタ用銅線の焼鈍方法。
- 前記通電加熱又は誘導加熱が不活性ガス雰囲気下で行われる、請求項1記載のインターコネクタ用銅線の焼鈍方法。
- 前記銅線が、タフピッチ銅、無酸素銅、リン脱酸銅又は純度99.9999%以上の銅から形成される平角の断面形状を有するものである、請求項1又は2記載のインターコネクタ用銅線の焼鈍方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011215137A JP6032455B2 (ja) | 2011-09-29 | 2011-09-29 | インターコネクタ用銅線の焼鈍方法 |
US14/345,901 US20140224387A1 (en) | 2011-09-29 | 2012-09-28 | Method of annealing copper wire for interconnector |
EP12775328.3A EP2761038A1 (en) | 2011-09-29 | 2012-09-28 | Method of annealing copper wire for interconnector |
CN201280043209.5A CN103890200B (zh) | 2011-09-29 | 2012-09-28 | 对互连器的铜线进行退火的方法 |
PCT/JP2012/075875 WO2013047907A1 (en) | 2011-09-29 | 2012-09-28 | Method of annealing copper wire for interconnector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011215137A JP6032455B2 (ja) | 2011-09-29 | 2011-09-29 | インターコネクタ用銅線の焼鈍方法 |
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JP2013076107A JP2013076107A (ja) | 2013-04-25 |
JP6032455B2 true JP6032455B2 (ja) | 2016-11-30 |
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Country | Link |
---|---|
US (1) | US20140224387A1 (ja) |
EP (1) | EP2761038A1 (ja) |
JP (1) | JP6032455B2 (ja) |
CN (1) | CN103890200B (ja) |
WO (1) | WO2013047907A1 (ja) |
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HUE055485T2 (hu) * | 2014-07-11 | 2021-11-29 | Heraeus Deutschland Gmbh & Co Kg | Eljárás kötési célokra szánt vastag rézhuzal elõállítására |
CN108823373B (zh) * | 2018-09-07 | 2024-03-19 | 合肥神马科技集团有限公司 | 一种绞合铜导体在线退火装置 |
CN109652638B (zh) * | 2019-01-18 | 2020-10-09 | 深圳金斯达应用材料有限公司 | 一种无氧铜丝生产用退火装置 |
CN111403559A (zh) * | 2020-04-13 | 2020-07-10 | 浙江晶科能源有限公司 | 一种光伏串焊机及光伏焊带加工方法 |
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US2979312A (en) * | 1959-03-09 | 1961-04-11 | Tillotson Mfg Co | Fuel feed and charge forming apparatus |
GB2178761B (en) * | 1985-03-29 | 1989-09-20 | Mitsubishi Metal Corp | Wire for bonding a semiconductor device |
JP5520438B2 (ja) * | 2006-09-05 | 2014-06-11 | 古河電気工業株式会社 | 線材の製造方法および線材の製造装置 |
JP2008140787A (ja) * | 2006-10-10 | 2008-06-19 | Hitachi Cable Ltd | 太陽電池用はんだめっき線およびその製造方法 |
JP5038765B2 (ja) * | 2006-12-14 | 2012-10-03 | 日立電線株式会社 | 太陽電池用はんだめっき線及びその製造方法 |
JP5073386B2 (ja) * | 2007-07-05 | 2012-11-14 | 株式会社Neomaxマテリアル | 太陽電池用電極線材、その基材および基材の製造方法 |
JP4656100B2 (ja) | 2007-07-23 | 2011-03-23 | 日立電線株式会社 | 太陽電池用はんだめっき線及びその製造方法 |
EP2060551A1 (en) * | 2007-11-16 | 2009-05-20 | BP p.l.c. | Process for producing triptane |
JP5544718B2 (ja) | 2008-04-25 | 2014-07-09 | 三菱マテリアル株式会社 | 太陽電池用インターコネクタ材及びその製造方法、並びに、太陽電池用インターコネクタ |
EP2276070B1 (en) * | 2008-04-25 | 2012-12-05 | Mitsubishi Materials Corporation | Solar cell interconnector material and solar cell interconnector |
JP5221231B2 (ja) * | 2008-07-18 | 2013-06-26 | 日立電線株式会社 | 太陽電池用リード線の製造方法 |
JP2010141050A (ja) * | 2008-12-10 | 2010-06-24 | Hitachi Cable Ltd | 太陽電池用リード線およびその製造方法 |
JP4808797B2 (ja) * | 2009-04-02 | 2011-11-02 | 島田理化工業株式会社 | 高周波誘導加熱装置 |
CN102054760A (zh) * | 2009-11-10 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | 铜互连结构的形成方法 |
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2011
- 2011-09-29 JP JP2011215137A patent/JP6032455B2/ja active Active
-
2012
- 2012-09-28 EP EP12775328.3A patent/EP2761038A1/en not_active Withdrawn
- 2012-09-28 WO PCT/JP2012/075875 patent/WO2013047907A1/en active Application Filing
- 2012-09-28 CN CN201280043209.5A patent/CN103890200B/zh active Active
- 2012-09-28 US US14/345,901 patent/US20140224387A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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CN103890200A (zh) | 2014-06-25 |
WO2013047907A1 (en) | 2013-04-04 |
US20140224387A1 (en) | 2014-08-14 |
EP2761038A1 (en) | 2014-08-06 |
CN103890200B (zh) | 2016-08-17 |
JP2013076107A (ja) | 2013-04-25 |
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