TW201539739A - 氮化物半導體元件與氮化物半導體晶圓 - Google Patents

氮化物半導體元件與氮化物半導體晶圓 Download PDF

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TW201539739A
TW201539739A TW104100395A TW104100395A TW201539739A TW 201539739 A TW201539739 A TW 201539739A TW 104100395 A TW104100395 A TW 104100395A TW 104100395 A TW104100395 A TW 104100395A TW 201539739 A TW201539739 A TW 201539739A
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layer
composition
nitride semiconductor
low
gan
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TW104100395A
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Chinese (zh)
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彥坂年輝
吉田学史
名古肇
布上真也
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東芝股份有限公司
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    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
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TW104100395A 2014-01-15 2015-01-07 氮化物半導體元件與氮化物半導體晶圓 TW201539739A (zh)

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JP2014005040A JP6302254B2 (ja) 2014-01-15 2014-01-15 窒化物半導体素子、窒化物半導体ウェーハ、及び、窒化物半導体素子の製造方法

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US (1) US9391145B2 (OSRAM)
EP (1) EP2897157A1 (OSRAM)
JP (1) JP6302254B2 (OSRAM)
KR (1) KR20150085475A (OSRAM)
CN (1) CN104779329A (OSRAM)
TW (1) TW201539739A (OSRAM)

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JP7033498B2 (ja) 2018-05-18 2022-03-10 株式会社東芝 半導体素子及びその製造方法
JP6951301B2 (ja) 2018-07-23 2021-10-20 株式会社東芝 半導体装置及びその製造方法
CN112531015B (zh) * 2020-12-02 2023-09-22 北京大学东莞光电研究院 低损耗氮化镓射频材料外延结构及制备方法
TWI868505B (zh) * 2022-08-18 2025-01-01 環球晶圓股份有限公司 高電子移動率電晶體磊晶結構
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CN115983738B (zh) * 2023-03-21 2023-06-27 广东仁懋电子有限公司 一种用于提升氮化镓制备效率的方法和装置

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US9391145B2 (en) 2016-07-12
EP2897157A1 (en) 2015-07-22
KR20150085475A (ko) 2015-07-23
US20150200255A1 (en) 2015-07-16
JP2015133443A (ja) 2015-07-23
CN104779329A (zh) 2015-07-15
JP6302254B2 (ja) 2018-03-28

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