TW201530654A - 蝕刻的方法 - Google Patents

蝕刻的方法 Download PDF

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TW201530654A
TW201530654A TW103144772A TW103144772A TW201530654A TW 201530654 A TW201530654 A TW 201530654A TW 103144772 A TW103144772 A TW 103144772A TW 103144772 A TW103144772 A TW 103144772A TW 201530654 A TW201530654 A TW 201530654A
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mask
substrate
etching
opening
feature
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TWI644358B (zh
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Huma Ashraf
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Spts Technologies Ltd
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Abstract

根據本發明，有一種於一基材中蝕刻一特徵的方法，包括下列步驟：形成一遮罩結構於該基材上，該遮罩結構界定至少一凹形開口；使用一循環蝕刻及沉積程序通過該開口蝕刻該基材以形成該特徵；及移除該遮罩。

Description

蝕刻的方法 發明領域
本發明係有關於一基材中蝕刻特徵的方法，特別是，但並非排他性的，係有關於一半導體基材，諸如一矽基材中一或多個特徵的蝕刻。
發明背景
矽中特徵的蝕刻係半導體元件製造之無所不在的態樣。然而，於矽中經蝕刻的特徵係難以使用後續的CVD及PVD程序加襯(line)或填充，除非該等經蝕刻之特徵的側壁具有一正型斜度(taper)且有低底切遮罩。該蝕刻的此等態樣之控制通常耗費蝕刻速率而達成。然而，顯見的是，若一程序的製造係有價值的，高生產量是必要的。常被使用之循環性蝕刻及沉積技術遇到一特別的問題，其中一蝕刻步驟被進行，其之後有一沉澱步驟。該程序係一循環性，即，數個循環被使用，其中各循環包括一蝕刻步驟及一相關聯之沉積步驟。此一般類型之精程序(seminal process)通常被敘述為博施(Bosch)法。該博施法係敘述於US5501893，其之整體內容被併入此處作為參考。該沉積 步驟通常沉積一鈍化材料，諸如一聚合物，至該經蝕刻之特徵的該等側壁上。博施法的變化態樣係已知的，包括其中各循環包括除了該等蝕刻及沉積步驟之外的一進一步步驟之變化態樣。使用該博施法及其變化態樣的該等經蝕刻之特徵通常產生一實質上的底切，其等基於上述理由而引起加工問題。圖1係一SEM顯微圖，顯示在一傳統博施法後觀察到之相對大底切的實例，其中一特徵係經由一微影術而蝕刻於矽中，產生一遮罩中的孔洞。此等問題在形成高縱橫比的溝槽、形成通孔，及於其他應用中會出現。雖然此等問題並未受限於任何特定特徵尺寸，其等係通常在微米及次微米等級為特別明顯的。US2006/0134917及US7250371揭示用於形成低臨界尺寸(CD)之經蝕刻之特徵，其中一遮罩被沉積且一保形(conformal)沉積層被沉積於該遮罩之開口的側壁上。然而，此等文件並未解決上面討論的該等問題。
本發明，於其之至少一些實施態樣中，解決上面敘述的問題。其他優點，其係與本發明之至少一些實施態樣有關，由下列說明將為顯見地。
發明概要
根據本發明之一寬廣的態樣，此處提供一種於一基材中蝕刻特徵的方法，包括下列步驟：形成一遮罩結構於該基材上，該遮罩結構界定至少一凹形開口； 通過該開口蝕刻該基材以形成該特徵；及移除該遮罩。
根據本發明之第一態樣，此處提供一種於一基材中蝕刻特徵的方法，包括下列步驟：形成一遮罩結構於該基材上，該遮罩結構界定至少一凹形開口；使用一循環蝕刻及沉積程序通過該開口蝕刻該基材以形成該特徵；及移除該遮罩。
以此方式，具有正型輪廓斜度及一經降低之底切的特徵可被製造。該等特徵可於高蝕刻速率下被蝕刻。一另一優點係可以使用已存在的、傳統蝕刻程序，同時實現與本發明相關的一些或所有優點。
該基材可為一半導體基材，諸如一矽基材。
有益地，該遮罩結構包括一第一遮罩及形成於該第一遮罩之至少一部份上的一第二遮罩，其中該第二遮罩界定該凹形開口。該第一遮罩可具有形成於其中的一孔洞。該第二遮罩可延伸至該孔洞中以界定該凹形開口。該孔洞可為一經微影術形成之孔洞。
該第二遮罩可由一聚合性材料形成。該聚合性材料可為一有機聚合性材料。該有機聚合性材料可為一氟碳聚合物，較佳一全氟碳聚合物。該有機聚合性材料可使用一C4F8前驅物被沉積於該第一遮罩上。
該第二遮罩可藉由循環地沉積及蝕刻該聚合性 材料而建構。藉由改變與該循環沉積及蝕刻程序的因子，可以控制該第二遮罩在該開口鄰近處中之形貌。該聚合性材料之橫向厚度及/或該聚合性材料的形狀可被控制。例如，該聚合性材料之橫向厚度可藉由控制沉積及蝕刻該聚合性材料之循環數而控制。藉由通過蝕刻達成控制該經沉積之聚合性材料之厚度與材料之移除速率，該第二遮罩的形狀可被控制。
該第一遮罩可為一硬遮罩，諸如一二氧化矽遮罩。
於其他實施態樣中，該遮罩結構係自單一遮罩形成。該單一遮罩可為一硬遮罩。
該開口可具有少於10微米之截面尺寸，較佳少於5微米，更佳少於2微米且最佳少於1微米。本發明可輕易應用於奈米技術應用是有益的。
該遮罩結構可界定一圍繞該開口的環圈區，其中該環圈區朝內朝向該開口傾斜。界定該開口的該遮罩結構部分可作為一麵包塊形形成(bread-loafing formation)而存在。其中於該遮罩結構包括一第一遮罩及一第二遮罩的實施態樣中，該第二遮罩可作為一界定該開口之麵包塊形形成而存在。
該遮罩結構可與該基材直接接觸。然而，亦有可能是該遮罩結構與該基材間接接觸，即，一或多個其他層可被沉積於該遮罩結構與該基材之間，條件在於該基材可通過該遮罩結構及該等額外的層而被蝕刻。
該經蝕刻的特徵可為一高縱橫比溝槽或一通孔。
蝕刻該基材的該步驟可使用一循環蝕刻及沉積程序而進行。該循環蝕刻及沉積程序可為博施法或其變化態樣。該博施法係敘述於US5501893，其之整體內容被併入此處作為參考。雖然本發明係特別良好適合於博施法蝕刻及其之變化態樣，其亦適合被與其他傳統蝕刻程序，諸如使用氟碳聚合物氧化物及氮化物蝕刻連同使用。
雖然本發明已如上所敘述，其延伸至任何上述，或以下說明書、申請專利範圍及圖式之特徵之具進步性之組合。
10‧‧‧基材
12‧‧‧遮罩結構
12a‧‧‧硬遮罩
12b‧‧‧陰影遮罩
14‧‧‧開口
16‧‧‧溝槽
30‧‧‧聚合物層
30a‧‧‧凹形側壁
32‧‧‧遮罩
34‧‧‧腳
根據本發明之方法的實施態樣現將參照隨附之圖式加以敘述，其中：-圖1係一經蝕刻之特徵的SEM顯微圖，該特徵係使用一傳統製造程序製造，顯示由於底切之CD損失；圖2係(a)蝕刻前具有一遮罩結構之基材及(b)蝕刻後該基材中之特徵之半圖示剖面圖；圖3係一形成於一二氧化矽遮罩上之凹形聚合物層的SEM顯微圖；圖4顯示使用本發明所蝕刻之(a)-(c)特徵及使用傳統程序所蝕刻之(d)-(e)特徵的SEM顯微圖；圖5係一高縱橫比次微米蝕刻特徵的SEM顯微圖；及圖6係一高縱橫比次微米蝕刻特徵的第二SEM顯微 圖。
較佳實施例之詳細說明
圖2(a)顯示一將被蝕刻之基材10，其具有形成於其上之一遮罩結構12。該遮罩結構12包含一硬遮罩12a及一陰影遮罩12b。該硬遮罩12a具有一孔洞，其係以傳統方式形成。該陰影遮罩12b係沉積於該硬遮罩12a上且亦沉積至該孔洞中以形成一開口14，經其一後續蝕刻程序可發生。該陰影遮罩12b的沉積係非保形(non-conformal)的。特別是，該陰影遮罩係沉積為該遮罩12a之該孔洞的非保形側壁。於顯示於圖2之實施態樣中，該陰影遮罩12b在該孔洞鄰近處之形貌係一麵包塊狀的形成。然而，不是必要提供一麵包塊狀形成。須被認為重要的是在遮罩12a之孔洞中的該陰影遮罩12b的側壁凹形輪廓。該陰影遮罩12b之凹形側壁形成一開口14，通過其可發生一後續蝕刻程序。顯見的是，該開口14之CD係少於由傳統手段形成之開口的CD。接續該遮罩結構12的形成，該基材10使用一合適的蝕刻程序被蝕刻。圖2(b)顯示得自該後續蝕刻程序的一經蝕刻之溝槽16。在該溝槽16被形成後，該遮罩結構被移除。
該硬遮罩12a可以任何方便的方式形成。然而，使用一光阻遮罩是極度方便的。合適的孔洞可使用傳統微影技術形成。
在實務中，該凹形陰影遮罩12b可藉由建構一鈍 化層而達成。此可藉由沉積一聚合物層而完成。於一實施態樣中，一聚合物層係使用C4F8前驅物而經電漿沉積。控制一聚合物層作為一陰影遮罩的沉積之方便的方法係使用一交替程序，其中一聚合物沉積步驟之後有一蝕刻程序。於一實施態樣中，一交替程序被使用，其中一C4F8沉積步驟後有於一氧化物遮罩上的一Ar/O2蝕刻/濺鍍步驟，此程序被循環一所欲次數。圖3顯示形成於一六微米厚SiO2遮罩32上的凹形聚合物層30。該聚合物層30於該遮罩32之一孔洞中形成凹形側壁30a。於圖3中顯示的該等虛線係對應至於朝內於該遮罩32中該孔洞之該聚合物層的最遠位置之垂直線。顯見的是，圖3中虛線間的間隙對應至該整體遮罩結構中該開口的CD。再者，對此領域中之閱讀者顯見的是，於該孔洞及遮罩32中該聚合物層30的凹形輪廓具有一效應，係有「陰影」於圖3中之虛線及該聚合物層30之相應之該等側壁30a之間。該聚合物層30之橫向厚度可藉由控制沉積及蝕刻之循環數而控制。藉由在該蝕刻期間改變沉積厚度對該移除速率，該聚合物層輪廓的形狀可被修改。發現的是小量的聚合物被沉積於該較低角落，作為一小的「腳」34，但此可於該蝕刻步驟期間被輕易移除。
測試被進行，其中特徵係使用本發明以及亦使用標準程序而蝕刻。於所有例子中，一搏施法循環蝕刻/沉積方法學被使用以蝕刻該特徵，且該蝕刻步驟於五個循環後被終止。該等程序條件、遮罩組態及結構性參數在下面顯示於表1及表2中。商業上可取得之蝕刻工具可被用於 或輕易地被適用以製造該陰影遮罩。例如，由申請人以Pegasus的商標名所販售之Si DRIE蝕刻工具可被使用。如表1所示，一循環聚合物沉積程序被使用所欲循環數。一誘導耦合電漿係使用一RF源製造以起始及維持一電漿。該基材被設置於一具有施加一RF偏壓之平台上。圖4(a)-(c)顯示使用本發明之程序的蝕刻結果，其皆涉及由使用C4F8前驅物電漿聚合作用所製造之一陰影遮罩，與一六微米厚SiO2硬遮罩之組合的使用。在這些程序中，一陰影遮罩係使用循環性60循環聚合物沉積及蝕刻步驟所形成，其各自係以三、四及五循環循環性的進行。
在各陰影遮罩被沉積後，一90s蝕刻被進行以移 除上述聚合物腳。藉由將沉積/蝕刻循環數自三增加至五，該遮罩之頂部附近的開口自1.77微米降低至1.24微米，而該經蝕刻之特徵的寬度係自1.88微米降低至1.33微米。該博施循環蝕刻/沉積程序接著被進行以於該矽基材中蝕刻該特徵。該底切被發現為少於65nm，其係遠低於以標準遮罩所達成者。使用該等標準遮罩者顯示於圖4(d)及(e)，該底切為大於100nm。可總結使用本發明下，具有較傳統硬遮罩小之CD的特徵尺寸可在經降低之底切下實現。該等測試證實，在陰影遮罩被沉積至其中的該硬遮罩中，該經蝕刻之特徵的該CD係遠少於該經微影術製造之孔洞的CD。
圖5及6顯示使用本發明所蝕刻之溝槽的SEM顯微圖。圖5及6顯示於一矽基材中具有少於0.7微米之寬度的蝕刻。該特徵的深度係27.3微米，具有大於38：1之縱橫比。由此程序所達成之蝕刻速率係大於1微米/分鐘。有益的是，該CD之絕佳控制被達成。此CD控制可使用傳統程序方案及傳統晶圓級遮罩微影技術而達成是大大有益 的。可以避免於主要蝕刻中聚合物大型配方(polymer heavy recipes)的使用，且優點在於該程序於一製造環境下可為穩定的。可以避免緩慢及/或昂貴的電子束微影技術。一另外的益處在於在該蝕刻步驟已完成後作為一鈍化層而建造的陰影遮罩可輕易被移除。
可以以其他方式製造該凹形遮罩輪廓，諸如藉由使用具有一或多個含凹形輪廓之孔洞的硬遮罩。本發明係良好地適用於連同一搏施法蝕刻而使用。然而，其亦可連同其他蝕刻程序而使用，例如，使用氟碳聚合物之氧化物及氮化物蝕刻。
10‧‧‧基材
12‧‧‧遮罩結構
12a‧‧‧硬遮罩
12b‧‧‧陰影遮罩
14‧‧‧開口
16‧‧‧溝槽

Claims (16)

  1. 一種於一基材中蝕刻一特徵的方法，包括下列步驟：形成一遮罩結構於該基材上，該遮罩結構界定至少一凹形開口；使用一循環蝕刻及沉積程序通過該開口蝕刻該基材以形成該特徵；及移除該遮罩。
  2. 如請求項1之方法，其中該基材係一半導體基材。
  3. 如請求項2之方法，其中該基材係一矽基材。
  4. 如請求項1至3之任一項的方法，其中該遮罩結構包括一第一遮罩及形成於該第一遮罩之至少一部份上的一第二遮罩，其中該第二遮罩界定該凹形開口。
  5. 如請求項4之方法，其中該第一遮罩具有一經微影術形成之孔洞於其中，且該第二遮罩延伸至該孔洞中以界定該凹形開口。
  6. 如請求項4或請求項5之方法，其中該第二遮罩係由一聚合性材料所形成。
  7. 如請求項6之方法，其中該聚合性材料係一有機聚合性材料。
  8. 如請求項7之方法，其中該有機聚合性材料係一氟碳聚合物，較佳地一全氟碳聚合物。
  9. 如請求項8之方法，其中該有機聚合性材料係使用一C4F8前驅物沉積至該第一遮罩上。
  10. 如請求項5至9之任一項的方法，其中該第二遮罩係由循環性沉積及蝕刻該聚合性材料而建構。
  11. 如請求項4至10之任一項的方法，其中該第一遮罩係一硬遮罩。
  12. 如請求項1至3之任一項的方法，其中該遮罩結構係由一單一遮罩，較佳地一硬遮罩所形成。
  13. 如請求項1至12之任一項的方法，其中該開口具有少於10微米，較佳地少於5微米，更佳地少於2微米且最佳地少於1微米之截面尺寸。
  14. 如請求項1至13之任一項的方法，其中該遮罩結構界定圍繞該開口的一環圈區域，其中該環圈區域向內朝向該開口傾斜。
  15. 如請求項1至14之任一項的方法，其中該遮罩結構係與該基材直接接觸。
  16. 如請求項1至15之任一項的方法，其中該經蝕刻之特徵係一高縱橫比溝槽或一通孔。
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