TW201527459A - 接著劑組合物、接著膜片以及半導體裝置之製造方法 - Google Patents
接著劑組合物、接著膜片以及半導體裝置之製造方法 Download PDFInfo
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- TW201527459A TW201527459A TW103126350A TW103126350A TW201527459A TW 201527459 A TW201527459 A TW 201527459A TW 103126350 A TW103126350 A TW 103126350A TW 103126350 A TW103126350 A TW 103126350A TW 201527459 A TW201527459 A TW 201527459A
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- acrylic polymer
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/062—Copolymers with monomers not covered by C09J133/06
- C09J133/066—Copolymers with monomers not covered by C09J133/06 containing -OH groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/72—Polyisocyanates or polyisothiocyanates
- C08G18/80—Masked polyisocyanates
- C08G18/8003—Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen
- C08G18/8006—Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen with compounds of C08G18/32
- C08G18/8009—Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen with compounds of C08G18/32 with compounds of C08G18/3203
- C08G18/8022—Masked polyisocyanates masked with compounds having at least two groups containing active hydrogen with compounds of C08G18/32 with compounds of C08G18/3203 with polyols having at least three hydroxy groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J175/00—Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
- C09J175/04—Polyurethanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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Abstract
提供可以充分的接著強度接合,特別是在於半導體
裝置,可達成很高的密封可靠度之接著劑組合物;具有由該接著劑組合物組成之接著劑層之接著膜片;以及使用該接著膜片之半導體裝置之製造方法。
關於本發明之接著劑組合物,其特徵在於包
含:藉由使用含有有機碲之化合物作為聚合起始劑之活性自由基聚合法,聚合丙烯酸系單體而得之重量平均分子量(Mw)為35萬以上的丙烯酸聚合物(A)、環氧系熱硬化性樹脂(B)及熱硬化劑(C)。
Description
本發明係關於特別適合用於將半導體元件(半導體晶片)晶粒接合於有機基板或導線架之步驟;將矽晶圓等切割且半導體晶片晶粒接合於有機基板或導線架之步驟之接著劑組合物;具有由該接著劑組合物組成之接著劑層之接著膜片;以及使用該接著膜片之半導體裝置之製造方法。
矽、砷化鎵等的半導體晶圓係以大徑的狀態製造,而將該晶圓切斷分離(切割)成元件小片(半導體晶片)之後,移至下一步驟之搭載步驟。此時,半導體晶圓係以預先黏貼於接著膜片狀態,加以切割、清洗、乾燥、擴展、拾取的各步驟後,移致下一步驟之接合步驟。
為簡化在於該等步驟中的拾取步驟及接合步驟的製程,有各種同時兼具晶圓固定功能與晶粒接著之切割‧晶粒接合用接著膜片之提案(專利文獻1等)。揭示於上述專利文獻1之接著膜片,係所謂可直接晶粒接合,可省略晶粒接著用接著劑的塗布步驟。
然而,近年對半導體裝置所要求的物性非常嚴酷。例如,在於電子零件的連接,進行密封全體暴露於焊錫融點以上的高溫下的表面構裝法(回焊)。再者,由於近年移向不含
鉛的焊錫,構裝溫度上升至260℃程度。因此,構裝時在半導體封裝內部所產生的應力變得較先前大,而在於接著界面發生剝離或封裝龜裂等的不適的可能性變高。
於專利文獻1,以防止切割後的接著劑層相互黏著為主,提案有一種接著劑組合物,其特徵在於包含:重量平均分子量(Mw)為90萬以上,而分子量分佈(Mw/Mn)為7以下之丙烯酸聚合物、環氧系樹脂及熱硬化劑。
[專利文獻1]日本特開2009-292888號公報
本發明者們,作為解決達成高的密封可靠度的課題的手段,由聚合法方面,著眼於控制丙烯酸聚合物的分子量分佈。上述專利文獻1之接著劑組合物,藉由使重量平均分子量Mw變大,相對減少低分子量成分的含量,藉此防止起因於低分子量成分的接著劑的可塑化,防止接著劑層相互的黏著。但是,揭示於專利文獻1之實施例之用於接著劑之丙烯酸聚合物之分子量分佈為4前後而相對較高,故為將低分子量成分的含量充分地減低,不得不使重量平均分子量大到100萬以上。
如此,丙烯酸聚合物之重量平均分子量高時,無法追隨近年更加微細化的晶片表面的凹凸,而有成為接著強度降低的主因之虞。此外,由於需要使用重量平均分子量高的丙烯酸系聚合物,故限制了接著劑的設計自由度。
本發明係以提供,可以充分的接著強度接合,特別是在於半導體裝置,可達成很高的密封可靠度之接著劑組合物;具有由該接著劑組合物組成之接著劑層之接著膜片;以及使用該接著膜片之半導體裝置之製造方法為目標。
解決上述課題之本發明,包含以下的要旨。
(1)一種接著劑組合物,包含:藉由使用含有有機碲之化合物作為聚合起始劑之活性自由基聚合法,聚合丙烯酸系單體而得之重量平均分子量(Mw)為35萬以上的丙烯酸聚合物(A)、環氧系熱硬化性樹脂(B)及熱硬化劑(C)。
(2)根據(1)之接著劑組合物,其中進一步含有架橋劑(D),丙烯酸聚合物(A)具有可與該架橋劑反應之官能基。
(3)根據(2)之接著劑組合物,其中架橋劑(D)含有異氰酸酯基,丙烯酸聚合物(A)含有羥基。
(4)根據(1)~(3)中任一項之接著劑組合物,其中丙烯酸聚合物(A)之重量平均分子量(Mw)為90萬以下。
(5)根據(1)~(4)中任一項之接著劑組合物丙烯酸聚合物(A),其中分子量分佈(Mw/Mn)為3以下。
(6)一種單層接著薄膜,以上述(1)~(5)中任一項之接著劑組合物組成。
(7)一種接著膜片,將上述(1)~(5)中任一項之接著劑組合物所組成之接著劑層,形成於支持體上而成。
(8)一種半導體裝置之製造方法,包含:將半導體晶圓黏貼於上述(7)之接著膜片之接著劑層,將上述半導體晶圓
切割成半導體晶片,使接著劑層固著殘存於上述半導體晶片,再由支持體剝離,將上述半導體晶片,經由上述接著劑層接著於晶粒墊部上,或其他的半導體晶片上之步驟。
將半導體晶片固定時,藉由使用關於本發明之接著膜片,可以充分的接著強度接合,即使在於苛刻的環境下,亦可得到顯示很高的密封可靠度之半導體裝置。
以下,進一步具體說明關於本發明之接著劑組合物、接著膜片及使用該膜片之半導體裝置之製造方法。
(接著劑組合物)
關於本發明之接著劑組合物,包含:丙烯酸聚合物(A)(以下亦稱為「(A)成分」。關於其他的成分亦相同。)、環氧系樹脂(B)(以下亦稱為「化合物(B)」或「(B)成分」。)、熱硬化劑(C)作為必要成分,為改良各種物性,亦可按照必要包含其他的成分。以下,具體說明該等各成分。
(A)丙烯酸聚合物
丙烯酸聚合物(A)之重量平均分子量(Mw)為35萬以上,以未滿200萬為佳,以40萬~180萬更佳,進一步以60萬~150萬為佳,以60萬~90萬特別佳。丙烯酸聚合物之重量平均分子量過低,則有起因於接著劑層之低分子量成分的流動性,而有損密封可靠度。此外,丙烯酸聚合物之重量平均分子量過高,則有接
著劑層無法追隨基板或晶片表面的凹凸而成為發生氣孔的主要原因。藉由使丙烯酸聚合物之重量平均分子量在於上述範圍,可使丙烯酸聚合物具有適度的柔軟性,提升接著劑層對於表面平滑性高的被著體表面之黏貼性,可將晶片與基板,或者晶片與晶片牢固地接著。此外,可防止起因於低分子量成分之密封可靠度下降。再者,本發明之丙烯酸聚合物(A),藉由如後所述使分子量分佈變小,可不使重量平均分子量變得過大的範圍,將低分子量成分的含量充分地減少。
丙烯酸聚合物(A)的分子量分佈(Mw/Mn)以3以下為佳,以2以下更佳,進一步以1.7以下為佳,以1.5以下特別佳。分子量分佈在3以下的丙烯酸聚合物,即使重量平均分子量高,由於分子量分佈窄,故流動性高的低分子量成分的含量少,而有避免該低分子量成分降低密封可靠度的趨勢。分子量分佈的下限值,由與各成分的相溶性的觀點點為1.2程度。
再者,丙烯酸聚合物(A)之重量平均分子量(Mw)、數平均分子量(Mn)及分子量分佈(Mw/Mn)之值,係以凝膠滲透層析法(GPC)法(聚苯乙烯標準),以後述之實施例之測定條件下所測定時之值。此外,使用後述之架橋劑(D)時,丙烯酸聚合物(A)之重量平均分子量(Mw)、數平均分子量(Mn)及分子量分佈(Mw/Mn),係與架橋劑(D)反應前之值。
丙烯酸聚合物之玻璃轉移溫度(Tg),以-10℃以上50℃以下為佳,以0℃以上40℃以下更佳,以0℃以上30℃以下的範圍特別佳。玻璃轉移溫度過低,則接著劑層與支持體之剝離力變大,而有引起晶片的拾取不良之情形,過高則有用於固
定晶圓之接著劑層之接著力變得不充分之虞。
構成該丙烯酸聚合物(A)之單體,至少包含(甲基)丙烯酸酯單體或其衍生物。(甲基)丙烯酸酯單體或其衍生物,可舉烷基之碳數為1~18之(甲基)丙烯酸烷基酯,例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯等;具有環狀骨架之(甲基)丙烯酸酯,例如(甲基)丙烯酸環烷基酯、(甲基)丙烯酸苄酯、異佛爾酮丙烯酸酯、丙烯酸二環戊酯、丙烯酸二環戊烯酯、丙烯酸二環戊烯氧乙酯、丙烯酸醯亞胺酯等;具有羥基之丙烯酸酯,例如(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸2-羥基丁酯等;具有縮水甘油基之(甲基)丙烯酸酯,例如(甲基)丙烯酸縮水甘油酯;具有胺基之(甲基)丙烯酸酯,例如(甲基)丙烯酸單乙基胺基酯、(甲基)丙烯酸二乙基胺基酯等。於丙烯酸聚合物(A),此外,亦可與(甲基)丙烯酸、依康酸等的具有羧基之單體、乙烯基醇、N-羥甲基(甲基)丙烯酸醯胺等的(甲基)丙烯酸酯以外的具有羥基之單體、(甲基)丙烯酸醯胺、醋酸乙烯酯、丙烯腈、苯乙烯等共聚合。
接著劑組合物包含後述之架橋劑(D)時,丙烯酸聚合物,具有羥基、胺基、羧基等與架橋劑(D)反應之官能基為佳,可藉由選擇上述具有羥基之丙烯酸酯、(甲基)丙烯酸單乙基胺基酯、(甲基)丙烯酸等作為構成丙烯酸聚合物(A)之單體,於丙烯酸聚合物導入可與架橋劑(D)反應之官能基。特別是具有羥基之丙烯酸聚合物(A),容易將羥基導入丙烯酸聚合物(A),與環氧系樹脂(B)之相溶性佳,此外,變得容易使用架橋
劑導入架橋構造而佳。此外,亦可組合使用複數種丙烯酸聚合物。
藉由使用具有可與架橋劑(D)反應之官能基之單體作為構成丙烯酸聚合物(A)之單體,於丙烯酸聚合物(A)導入與架橋劑(D)反應之官能基時,具有與架橋劑(D)反應之官能基之單體之質量,對構成丙烯酸聚合物(A)之單體全質量中的比例以1~20質量%程度為佳,以3~15質量%更佳
如上所述之丙烯酸聚合物(A),係將上述丙烯酸系單體,使用有機碲化合物作為聚合起始之活性自由基聚合之方法(以下有記載為「TERP聚合法」之情形)而得者。藉由採用活性自由基聚合法,容易調整丙烯酸聚合物(A)之分子量分佈(Mw/Mn),而可提升使用本發明之接著劑組合物之半導體裝置之可靠度。此外,藉由採用TERP聚合法,可提升分子量的控制性。特別是,可適用於高分子量的聚合物。
如此之活性自由基聚合起始劑之含有碲之化合物,可良好地使用下述者。
式中,R1係表示碳數1~8之烷基、芳基、取代芳基或芳香族雜環基。R2及R3,係表示氫原子或碳數1~8之烷基。R4,係表示芳基、取代芳基、芳香族雜環基、醯基、氧羰基或氰基。
以R1表示之基,具體如下。碳數1~8之烷基,可舉
甲基、乙基、正丙基、異丙基、環丙基、正丁基、第二丁基、第三丁基、環丁基、正戊基、正己基、正庚基、正辛基等的碳數1~8之直鏈狀、分枝鏈狀或環狀的烷基。烷基,以碳數1~4之直鏈狀或分枝鏈狀烷基為佳,以甲基或乙基更佳。
芳基,可舉苯基、萘基等;取代芳基,以具有取代基之苯基、具有取代基之萘基等;芳香族雜環基,可舉哌啶基、呋喃基、噻吩基等。具有上述取代基支芳基支取代基,可舉例如,鹵素原子、羥基、烷氧基、胺基、硝基、氰基、-COR5表示之含有羰基之基(R5=碳數1~8之烷基、芳基、碳數1~8之烷氧基、芳氧基)、磺醯基、三氟甲基等。較佳的芳基,以苯基、三氟甲基取代苯基為佳。此外,該等取代基,取代1個或2個為佳,以對位或者鄰位為佳。
R2及R3所示之各基,具體如下。碳數1~8之烷基,可舉與上述R1所示之烷基相同者。
R4所示之各基,具體如下。芳基、取代芳基、芳香族雜環基,可舉與上述R1所示之基相同者。醯基,可舉醛基、乙醯基、苯甲醯基等。氧羰基,可舉以-COOR6(R6=H、碳數1~8之烷基、芳基)表示之基為佳,例如羧基、甲氧基羰基、乙氧基羰基、丙氧基羰基、正丁氧基羰基、第二丁氧基羰基、第三丁氧基羰基、正戊氧基羰基、苯氧基羰基等。較佳的是以氧羰基,甲氧基羰基、乙氧基羰基為佳。
R4所示之各基,以芳基、取代芳基、氧羰基為佳。較佳的芳基,以苯基為佳。較佳的取代芳基,以鹵素原子取代苯基、三氟甲基取代苯基為佳。此外,該等取代基為鹵素原
子時,取代1~5個為佳。烷氧基或三氟甲基之情形,取代1個或2個取代為佳,取代1個時,以對位或者鄰位為佳,取代2個時,以間位為佳。較佳的氧羰基,以甲氧基羰基、乙氧基羰基為佳。
較佳的通式(1)所示之含有碲之化合物,以R1係表示碳數1~4之烷基,R2及R3係表示氫原子或碳數1~4之烷基,R4係表示芳基、取代芳基、氧羰基之化合物為佳。特別佳的是R1係表示碳數1~4之烷基,R2及R3係表示氫原子或碳數1~4之烷基,R4係表示苯基、取代苯基、甲氧基羰基、乙氧基羰基為佳。
通式(1)所示之含有碲之化合物,具體如下。含有碲之化合物,可舉(甲基碲基-甲基)苯、(1-甲基碲基-乙基)苯、(2-甲基碲基-丙基)苯、1-氯-4-(甲基碲基-甲基)苯、1-羥基-4-(甲基碲基-甲基)苯、1-甲氧基-4-(甲基碲基-甲基)苯、1-胺基-4-(甲基碲基-甲基)苯、1-硝-4-(甲基碲基-甲基)苯、1-氰基-4-(甲基碲基-甲基)苯、1-甲基羰基-4-(甲基碲基-甲基)苯、1-苯基羰基-4-(甲基碲基-甲基)苯、1-甲氧基羰基-4-(甲基碲基-甲基)苯、1-苯氧基羰基-4-(甲基碲基-甲基)苯、1-磺醯-4-(甲基碲基-甲基)苯、1-三氟甲基-4-(甲基碲基-甲基)苯、1-氯-4-(1-甲基碲基-乙基)苯、1-羥基-4-(1-甲基碲基-乙基)苯、1-甲氧基-4-(1-甲基碲基-乙基)苯、1-胺基-4-(1-甲基碲基-乙基)苯、1-硝-4-(1-甲基碲基-乙基)苯、1-氰基-4-(1-甲基碲基-乙基)苯、1-甲基羰基-4-(1-甲基碲基-乙基)苯、1-苯基羰基-4-(1-甲基碲基-乙基)苯、1-甲氧基羰基-4-(1-甲基碲基-乙基)苯、1-苯氧基羰基-4-(1-甲基碲基-乙基)苯、1-磺醯-4-(1-甲基碲基-乙基)苯、1-三氟甲
基-4-(1-甲基碲基-乙基)苯[1-(1-甲基碲基-乙基)-4-三氟甲基苯]、1-(1-甲基碲基-乙基)-3,5-雙-三氟甲基苯、1,2,3,4,5-五氟-6-(1-甲基碲基-乙基)苯、1-氯-4-(2-甲基碲基-丙基)苯、1-羥基-4-(2-甲基碲基-丙基)苯、1-甲氧基-4-(2-甲基碲基-丙基)苯、1-胺基-4-(2-甲基碲基-丙基)苯、1-硝-4-(2-甲基碲基-丙基)苯、1-氰基-4-(2-甲基碲基-丙基)苯、1-甲基羰基-4-(2-甲基碲基-丙基)苯、1-苯基羰基-4-(2-甲基碲基-丙基)苯、1-甲氧基羰基-4-(2-甲基碲基-丙基)苯、1-苯氧基羰基-4-(2-甲基碲基-丙基)苯、1-磺醯-4-(2-甲基碲基-丙基)苯、1-三氟甲基-4-(2-甲基碲基-丙基)苯、2-(甲基碲基-甲基)吡啶、2-(1-甲基碲基-乙基)吡啶、2-(2-甲基碲基-丙基)吡啶、2-甲基-2-甲基碲基-丙醇、3-甲基-3-甲基碲基-2-丁酮、2-甲基碲基-乙酸甲酯、2-甲基碲基-丙酸甲酯、2-甲基碲基-2-甲基丙酸甲酯、2-甲基碲基-乙酸乙酯、2-甲基碲基-丙酸乙酯、2-甲基碲基-2-甲基丙酸乙酯[乙基-2-甲基-2-甲基碲基-丙酸酯]、2-(正丁基碲基)-2-甲基丙酸乙酯[乙基-2-甲基-2-正丁基碲基-丙酸酯]、2-甲基碲基丙烯腈、2-甲基碲基丙腈、2-甲基-2-甲基碲基丙腈、(苯基碲基-甲基)苯、(1-苯基碲基-乙基)苯、(2-苯基碲基-丙基)苯等。
此外,在於上述,將甲基碲基、1-甲基碲基、2-甲基碲基的部分分別變更為乙基碲基、1-乙基碲基、2-乙基碲基、丁基碲基、1-丁基碲基、2-丁基碲基之化合物均包含。較佳的是以(甲基碲基-甲基)苯、(1-甲基碲基-乙基)苯、(2-甲基碲基-丙基)苯、1-氯-4-(1-甲基碲基-乙基)苯、1-三氟甲基-4-(1-甲基碲基-乙基)苯[1-(1-甲基碲基-乙基)-4-三氟甲基苯]、2-甲
基碲基-2-甲基丙酸甲酯、2-甲基碲基-2-甲基丙酸乙酯[乙基-2-甲基-2-甲基碲基-丙酸酯]、2-(正丁基碲基)-2-甲基丙酸乙酯[乙基-2-甲基-2-正丁基碲基-丙酸酯]、1-(1-甲基碲基-乙基)-3,5-雙-三氟甲基苯、1,2,3,4,5-五氟-6-(1-甲基碲基-乙基)苯、2-甲基碲基丙腈、2-甲基-2-甲基碲基丙腈、(乙基碲基-甲基)苯、(1-乙基碲基-乙基)苯、(2-乙基碲基-丙基)苯、2-乙基碲基-2-甲基丙酸甲酯、2-乙基碲基-2-甲基丙酸乙酯、2-乙基碲基丙腈、2-甲基-2-乙基碲基丙腈、(正丁基碲基-甲基)苯、(1-正丁基碲基-乙基)苯、(2-正丁基碲基-丙基)苯、2-正丁基碲基-2-甲基丙酸甲酯、2-正丁基碲基-2-甲基丙酸乙酯、2-正丁基碲基丙腈、2-甲基-2-正丁基碲基丙腈為佳。
以該等通式(1)表示之含有碲之化合物,可以單獨或組合2種以上使用。通式(1)所示之含有碲之化合物,例如採用乙基-2-甲基-2-甲基碲基-丙酸酯時,其合成方法,可以日本特開2011-74380號公報所揭示之方法而得。
在於聚合步驟,加上上述含有碲之化合物,亦可添加偶氮系聚合起始劑作為聚合促進劑。偶氮系聚合起始劑,只要是用於通常的自由基聚合之起始劑,並無特別限定,例示可舉2,2'-偶氮雙(異丁腈)(AIBN)、2,2'-偶氮雙(2-甲基丁腈)(AMBN)、2,2'-偶氮雙(2,4-二甲基戊腈)(ADVN)、1,1'-偶氮雙(1-環六甲腈)(ACHN)、二甲基-2,2'-偶氮雙異丁酯(MAIB)、4,4'-偶氮雙(4-氰基吉草酸)(ACVA)、1,1'-偶氮雙(1-乙醯氧基-1-苯基乙烷)、2,2'-偶氮雙(2-甲基丁基醯胺)、2,2'-偶氮雙(4-甲氧基-2,4-二甲基戊腈)、2,2'-偶氮雙(2-甲基脒基丙烷)二塩酸塩、
2,2'-偶氮雙[2-(2-咪唑啉-2-基)丙烷]、2,2'-偶氮雙[2-甲基-N-(2-羥基乙)丙酸醯胺]、2,2'-偶氮雙(2,4,4-三甲基戊烷)、2-氰基-2-丙基偶氮甲醯胺、2,2'-偶氮雙(N-丁基-2-甲基丙酸醯胺)、2,2'-偶氮雙(N-環己-2-甲基丙酸醯胺)等。使用上述偶氮系聚合起始劑時,使用於作為聚合起始劑之式(1)之含有碲之化合物1mol,以0.01~100mol為佳,以0.1~100mol更佳,進一步以0.1~5mol的比例使用為佳。
將丙烯酸聚合物(A),藉由活性自由基聚合形成之方法,例如如下。以惰性氣體置換的容器,將上述單體的混合物,與通式(1)所示之活性自由基聚合起始劑及根據所期望之偶氮系聚合起始劑混合。此時,惰性氣體為氮、氬、氦等。較佳的是以氬、氮為佳。特別佳的是以氮為佳。單體與通式(1)所示之活性自由基聚合起始劑之使用量,只要根據目標之丙烯酸聚合物(A)之分子量或者分子量分佈適宜調節即可。較佳的使用量,係以各單體的分子量乘上放入比例所得之值之總和以目標之丙烯酸聚合物(A)之重量平均分子量(Mw)商除之值(使用量的單位為莫耳數),根據情形使用該值之0.3~3倍程度的量。
聚合,通常係以無溶劑進行,使用一般使用於自由基聚合之有機溶劑亦無妨。可使用之溶劑,可舉例如,苯、甲苯、N,N-二甲基甲醯胺(DMF)、二甲基亞碸(DMSO)、丙酮、氯仿、四氯化碳、四氫呋喃(THF)、醋酸乙酯、三氟甲基苯等。此外,亦可使用水性溶劑,例如、水、甲醇、乙醇、異丙醇、正丁醇、乙基溶纖劑、丁基溶纖劑、1-甲氧基-2-丙醇等。溶劑的使用量,只要適宜調節即可,例如對單體1g,溶劑為
0.01~100ml,以0.05~10ml為佳,以0.05~0.5ml特別佳。
其次,將上述混合物攪拌。反應溫度、反應時間,只要根據所得之丙烯酸聚合物(A)之分子量或者分子量分佈適宜調節即可,通常為60~150℃,攪拌5~100小時。較佳的是以80~120℃,攪拌10~30小時為佳。聚合,通常係以常壓進行,惟加壓或者減壓亦無妨。反應結束後,根據常法將使用之溶劑或殘存單體減壓去除,或沉澱過濾、再沉澱、或者管柱分離等按照必要將目標之丙烯酸聚合物(A)純化。關於反應處理,只要不阻礙目標物可進行任何處理方法。
例如,在於丙烯酸聚合物(A),使包含於其中的重量平均分子量Mw為5萬以下的低分子量成分的比例為0.1質量%以下,可採用下述分離法。首先,甲醇、乙醇、正丙醇、異丙醇等的低級醇、或戊烷、己烷、庚烷等的碳數5~10之脂肪族烴,較佳的是於甲醇或己烷100質量部中,將丙烯酸聚合物(A),以固形分1~30質量部程度的比例加入,以室溫攪拌使之沉澱形成。接著,將該沉澱物以傾析等的方法固液分離之後,上述低級醇或碳數5~10之脂肪烴清洗後使用。可藉由該分離法,使丙烯酸聚合物(A)中的分子量Mw5萬以下的低分子量成分的比例為0.1質量%以下。
在於該活性自由基聚合法,藉由使用構成丙烯酸聚合物(A)之各單體的混合物,可得隨機共聚物之丙烯酸聚合物(A)。該隨機共聚物,係無關於單體的種類,可按照反應之單體的比例(莫耳比)得到共聚物。藉由以含有碲之化合物作為聚合起始劑,可將分子量控制及分子量分佈控制,以非常溫和
的條件下進行。丙烯酸聚合物(A)的分子量,可根據反應時間、含有碲之化合物之量調整。具體而言,為增加分子量,則減少含有碲之化合物對單體的調合比例,增加聚合時間即可。但是,以此得到分子量大的丙烯酸聚合物(A)需要長時間。因此,在圖謀減少聚合時間,可藉由提高聚合溫度,或添加上述偶氮系聚合起始劑而達成。但是,聚合溫度過高,或偶氮系聚合起始劑的添加量過多,則會增大丙烯酸聚合物(A)的分子量分佈,故需要與此之調整。
丙烯酸聚合物(A)佔接著劑組合物全體之質量中的調合比例,以35~90質量%為佳,以40~85質量%更佳,進一步以45~80質量%為佳。藉由將丙烯酸聚合物(A)之調合量如上述限制,可提高接著劑組合物在硬化前之彈性,未使接著劑層硬化而進行打線接合之半導體裝置之製造方法,不容易因接合時的衝撃使接著劑層發生變形,而有抑制發生不適的趨勢。此外,在於如此之丙烯酸聚合物(A)佔接著劑組合物中的比例多時,藉由使用重量平均分子量(Mw)為35萬以上,分子量分佈(Mw/Mn)為3以下之丙烯酸聚合物(A)之本發明的密封可靠度的提升効果變得更加顯著。
(B)環氧系熱硬化性樹脂
環氧系熱硬化性樹脂(B),可使用先前公知的環氧樹脂。環氧系熱硬化性樹脂(B),具體可舉,多官能系環氧樹脂,或聯苯化合物、雙酚A二縮水甘油醚或其加氫物、鄰甲酚酚醛環氧樹脂、二環戊二烯型環氧樹脂、聯苯基型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、亞苯基骨架型環氧樹脂等,
於分子中聚有2官能以上之環氧化合物。該等可以1種單獨或組合2種以上使用。
於接著劑組合物,對丙烯酸聚合物(A)100質量部,包含環氧系熱硬化性樹脂(B),1~100質量部為佳,包含3~70質量部更佳,包含5~50質量部特別佳。藉由使環氧系熱硬化性樹脂(B)之含量在於如此之範圍,可維持充分的接著性的同時,維持接著劑層的彈性,即使在硬化前的狀態,使接著劑層變得不容易因在於打線接合步驟之接合時的衝撃而發生變形,有抑制發生不適的趨勢。
(C)熱硬化劑
熱硬化劑(C),係對環氧系熱硬化性樹脂(B)作用作為硬化劑。較佳的熱硬化劑(C),可舉於1分子中,具有2個以上可與環氧基反應之官能基之化合物。該官能基,可舉酚性羥基、醇性羥基、胺基、羧基及酸酐等。該等之中,較佳的可舉酚性羥基、胺基、酸酐等,進一步以酚性羥基、胺基為佳。進一步以酚性羥基、胺基為佳。
酚系硬化劑之具體例,可舉多官能系酚樹脂、雙酚、酚醛型酚樹脂、二環戊二烯系酚樹脂、新酚型酚樹脂、芳烷基酚樹脂。胺系硬化劑之具體例,可舉DICY(二氰基二醯胺)。該等,可以1種單獨或混合2種以上使用。
在於接著劑組合物之熱硬化劑(C)之含量,對環氧系熱硬化性樹脂(B)100質量部,以0.1~500質量部為佳,以1~200質量部更佳。熱硬化劑(C)之含量少,則有硬化不足而無法得到接著性之情形,過剰則有接著劑層之吸濕率變高而有降低密
封可靠度之情形。
(D)架橋劑
於接著劑組合物,添加架橋劑(D)為佳。架橋劑(D),可舉有機多元異氰酸酯化合物、有機多元亞胺化合物等。藉由導入架橋構造,可提升本發明之接著劑組合物之半導體裝置之可靠度。活性自由基聚合,與自由基聚合比較具有在於活性點的反應非常的緩和之特徴。即,於自由基聚合,可認為由於在活性點的反應非常的快,而由反應性高的單體開始聚合,之後,反應性低的單體聚合者。另一方,於活性自由基聚合,可認為是由於在活性點的反應緩和,故不會受到單體的反應性的影響而均等地進行聚合,可成為均等的組成者。該活性自由基聚合之特徴的結果,使用具有與架橋劑(D)反應之官能基之單體時,可減少所得丙烯酸聚合物(A)中,產生未取入具有與架橋劑(D)反應之官能基之單體聚合物中,而大體上不具有與架橋劑(D)反應之官能基之丙烯酸聚合物(A)之分子之機率。藉此,即使存在低分子量的丙烯酸聚合物(A)的分子,藉由與架橋劑的反應,取入三維網目構造的可能性高,而可認為亦減少未取入三維網目構造而殘存之低分子量聚合物損及密封可靠度的可能性。
上述有機多元異氰酸酯化合物,可舉芳香族多元異氰酸酯化合物、脂肪族多元異氰酸酯化合物、脂環族多元異氰酸酯化合物及該等有機多元異氰酸酯化合物之三聚物、以及該等有機多元異氰酸酯化合物與多元醇化合物反應而得之末端異氰酸酯尿烷預聚合物等。
有機多元異氰酸酯化合物,可舉例如2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-二甲苯二異氰酸酯、1,4-二甲苯二異氰酸酯、二苯基甲烷-4,4’-二異氰酸酯、二苯基甲烷-2,4’-二異氰酸酯、3-甲基二苯基甲烷二異氰酸酯、六亞甲基二異氰酸酯、異佛爾酮二異氰酸酯、二環己甲烷-4,4’-二異氰酸酯、二環己甲烷-2,4’-二異氰酸酯、賴胺酸異氰酸酯、及對該等多元醇之加成物。
使用異氰酸酯系架橋劑時,丙烯酸聚合物(A),具有羥基作為與架橋劑反應之官能基為佳。架橋劑,具有異氰酸酯基,而丙烯酸聚合物(A)具有羥基,則藉由異氰酸酯基與羥基的反應,而容易形成架橋劑與丙烯酸聚合物(A)之鍵結,可簡便地對接著劑導入架橋構造。
上述有機多元亞胺化合物,N,N’-二苯基甲烷-4,4’-雙(1-吖丙啶羧醯胺)、三羥甲基丙烷-三-β-吖丙啶基丙酸酯、四羥甲基甲烷-三-β-吖丙啶基丙酸酯及N,N’-甲苯-2,4-雙(1-吖丙啶羧醯胺)三亞乙基三聚氰胺等。
使用有機多元亞胺化合物作為架橋劑時,丙烯酸聚合物(A)具有羧基作為與架橋劑反應之官能基為佳,藉此可於丙烯酸聚合物與架橋劑之間產生鍵結,對接著劑導入架橋構造。
使用架橋劑(D)時,架橋劑(D),對丙烯酸聚合物(A)100質量部,通常為0.01~20質量部,以0.1~10質量部為佳,以0.5~5質量部的比例使用更佳。
其他的成分
接著劑組合物,加上上述成分,亦可包含下述成分。
(E)硬化促進劑
硬化促進劑(E),係用於調整接著劑組合物之硬化速度。硬化促進劑(E),可特別良好的使用於並用環氧系熱硬化性樹脂(B)與熱硬化劑(C)之情形。
較佳的硬化促進劑,可舉三乙二胺、苄基二甲基胺、三乙醇胺、二甲基胺基乙醇、三(二甲基胺基甲基)酚等的3級胺類;2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑等的咪唑類;三丁基膦、二苯基膦、三苯基膦等的有機膦類;四苯基鏻四苯基硼酸酯、三苯基膦四苯基硼酸酯等的四苯基硼鹽等。該等可以1種單獨或混合2種以上使用。
使用硬化促進劑(E)時,硬化促進劑(E),對環氧系熱硬化性樹脂(B)及熱硬化劑(C)之合計100質量部,以0.01~10質量部為佳,進一步以0.1~1質量部的量包含為佳。藉由將硬化促進劑(E)以上述範圍的量含有,即使暴露於高溫度高濕度下亦可具有優良的接著特性,即使暴露於嚴酷回焊條件,亦可達成很高的密封可靠度。硬化促進劑(E)之含量少,則有因硬化不足而無法得到充分的接著特性,過剰則具有高極性之硬化促進劑在高溫度高濕度下有在接著劑層中移向接著界面側,偏析而降低密封可靠度之虞。
(F)能量線聚合性化合物
於接著劑組合物,亦可調合能量線聚合性化合物。能量線聚合性化合物(F),包含能量線聚合性基,受到紫外線、電子
線等的能量線的照射會聚合硬化。如此之能量線聚合性化合物(F),具體可舉,三羥甲基丙烷三丙烯酸酯、異戊四醇基三丙烯酸酯、異戊四醇基四丙烯酸酯、二異戊四醇基單羥基五丙烯酸酯、二異戊四醇基六丙烯酸酯或1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、具乙二醇二丙烯酸酯、寡聚酯丙烯酸酯、尿烷丙烯酸酯系寡聚物、環氧變性丙烯酸酯、聚醚丙烯酸酯及依康酸寡聚物等的丙烯酸酯系化合物。如此之化合物,係於分子內至少具有1個聚合性雙鍵鍵結,通常,重量平均分子量為100~30000,以300~10000程度為佳。使用能量線聚合性化合物(F)時,其調合量,並無特別限定,接著劑組合物之固形分全量的100質量%中,以1~50質量%程度的比例使用為佳。
(G)光聚合起始劑
接著劑組合物,含有上述能量線聚合性化合物(F)時,於使用其時,照射紫外線等的能量線,使能量線聚合性化合物硬化。此時,藉由於接著劑層中含有光聚合起始劑(G),可減少聚合硬化時間及光線照射量。
如此之光聚合起始劑(G),具體可舉,二苯甲酮、苯乙酮、安息香、安息香甲基醚、安息香乙基醚、安息香異丙基醚、安息香異丁基醚、安息香安息香酸、安息香安息香酸甲酯、安息香二甲基縮酮、2,4-二乙基噻噸酮、α-羥基環己苯基酮、苄基二苯基硫醚、四甲基秋蘭姆單硫醚、偶氮雙異丁腈、苄基、二苄基、二乙醯、1,2-二苯基甲烷、2-羥基-2-甲基-1-[4-(1-甲基乙烯基)苯基]丙酮、2,4,6-三甲基苯甲醯二苯基氧化膦及β-氯蒽醌等。光聚合起始劑(G),可1種單獨或組合
2種以上使用。
使用光聚合起始劑(G)時,其調合比例,對能量線聚合性化合物(F)100質量部,包含0.1~10質量部為佳,包含1~5質量部更佳。未滿0.1質量部則光聚合不足而無法得到滿足的拾取性,超過10質量部則生成不參與光聚合之殘留物,而使接著劑層之硬化性不充分。
(H)偶合劑
偶合劑(H),係具有可與有機化合物鍵結之基,及可與無機化合物反應之基之化合物,亦可將該偶合劑使用於提升接著劑層對被著體之接著性、密著性。此外,藉由使用偶合劑(H),可不損及硬化接著劑層所得之硬化物之耐熱性地提升其耐水性。
偶合劑(H)之可與有機化合物鍵結之基,以可與上述丙烯酸聚合物(A)、環氧系熱硬化性樹脂(B)等所具有之官能基反應之基為佳。偶合劑(H),以矽烷偶合劑為佳。如此之偶合劑,可舉γ-縮水甘油基丙基三甲氧基矽烷、γ-縮水甘油基丙基甲基二乙氧基矽烷、β-(3,4-環氧環己)乙基三甲氧基矽烷、γ-(甲基丙烯醯氧丙基)三甲氧基矽烷、γ-胺基丙基三甲氧基矽烷、N-6-(胺基乙基)-γ-胺基丙基三甲氧基矽烷、N-6-(胺基乙基)-γ-胺基丙基甲基二乙氧基矽烷、N-苯基-γ-胺基丙基三甲氧基矽烷、γ-脲基丙基三乙氧基矽烷、γ-胇基丙基三甲氧基矽烷、γ-胇基丙基甲基二甲氧基矽烷、雙(3-三乙氧基矽基丙基)四碸、甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙醯氧基矽烷、咪唑矽烷、3-異氰酸酯丙基三乙氧基
矽烷、異氰酸酯甲基甲基二丁氧基矽烷、異氰酸酯甲基三乙氧基矽烷等。該等可以1種單獨或混合2種以上使用。
使用偶合劑(H)時,偶合劑,對丙烯酸聚合物(A)、環氧系熱硬化性樹脂(B)、及熱硬化劑(C)的合計100質量部,通常為0.1~20質量部,以0.2~10質量部為佳,以0.3~5質量部的比例含有更佳。偶合劑(H)之含量未滿0.1質量部,則有無法得到上述効果的可能性,超過20質量部則有成為脫氣之原因的可能性。
(I)無機充填材
藉由將無機充填材(I)調合於接著劑組合物,可調整接著劑層之熱膨張係數,藉由將硬化後的接著劑層的熱膨張係數對半導體晶片、金屬或有機基板最佳化,可提升密封可靠度。此外,亦可減低接著劑層在硬化後的吸濕率。
較佳的無機充填材,可舉二氧化矽、滑石、碳酸鈣、鈦白、氧化鐵、碳化矽、氮化硼等的粉末,將該等球形化之小珠、單晶繊維及玻璃繊維等。該等之中,以二氧化矽填充劑為佳。上述無機充填材(I),可以單獨或混合2種以上使用。使用無機充填材(I)時,其含量,對接著劑組合物之全固形分100質量部,通常可於0~80質量%的範圍調整。
(J)汎用添加劑
於接著劑組合物,於上述之外,亦可按照必要調合各種添加劑。各種添加劑,可舉可塑劑、帶電防止劑、氧化防止劑、顏料、染料、除氣劑等。
由如上所述各成分組成之接著劑組合物所組成之
接著劑層,具有感壓接著性與加熱硬化性,於未硬化狀態具有將各種被著體暫時保持之功能。然後,經由熱硬化最終可賦予耐衝撃性高的硬化物,剪斷強度優良,即使在於嚴酷的高溫度高濕度條件下,亦可保持充分的接著特性。
接著劑層,可為製膜上述接著劑組合物而成之單層的接著膜片,惟較佳的是上述接著劑組合物所組成之接著劑層可剝離地形成於支持體上而成之接著膜片。
(接著膜片)
以下,以接著劑層可剝離地形成於支持體上而成的接著膜片為例,說明關於接著劑組合物之良好的態様及使用態様。使用將接著劑層可剝離地形成於支持體上而成之接著膜片時,使接著劑層接著於晶圓、晶片等的被著體,將支持體剝離,將接著劑層轉印於被著體。關於本發明之接著膜片之形狀,可採取帶狀、標籤狀等任何形狀。
接著膜片之支持體,可使用例如,聚乙烯薄膜、聚丙烯薄膜、聚丁烯薄膜、聚丁二烯薄膜、聚甲基戊烯薄膜、聚氯乙烯薄膜、氯乙烯共聚物薄膜、聚對苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚對苯二甲酸丁二醇酯薄膜、聚尿烷薄膜、乙烯醋酸乙烯酯共聚物薄膜、離聚物樹脂薄膜、乙烯‧(甲基)丙烯酸共聚物薄膜、乙烯‧(甲基)丙烯酸酯共聚物薄膜、聚苯乙烯薄膜、聚碳酸酯薄膜、聚醯亞胺薄膜、氟樹脂薄膜等的薄膜。此外,亦可使用該等之架橋薄膜。再者,亦可為該等之層積薄膜。此外,亦可使用將該等著色之薄膜。具有支持體之紫外線、可見光等的放射線的穿透性,可按照其用
途,選擇適當程度者。
關於本發明之接著膜片,係黏貼於各種被著體,對被著體施以所需加工之後,使接著劑層固著殘存於被著體,再由支持體剝離。即,使用於包含將接著劑層,由支持體轉印於被著體之步驟之製程。因此,支持體沒有作黏著處理時,接於接著劑層之支持體之面之表面張力,以40mN/m以下為佳,進一步以37mN/m以下為佳,以35mN/m以下特別佳。下限值通常為25mN/m程度。如此之表面張力低的支持體,可藉由適宜選擇材質而得,此外,亦可藉由在支持體的表面塗佈剝離劑施以剝離處理而得。
使用於支持體之剝離處理之剝離劑,可使用醇酸系、矽系、氟系、不飽和聚酯系、聚烯烴系、臘系等,特別是以醇酸系、矽系、氟系之剝離劑,由於具有耐熱性而佳。
使用上述剝離劑,將支持體的表面剝離處理剝離劑,可直接以無溶劑、或以溶劑稀釋或乳膠化,以凹版塗佈機、刮棒塗佈機、氣刀塗佈機、輥塗機等塗佈,以常溫、加熱或電子線硬化,濕式層壓或乾式層壓、熱熔融層壓、溶融擠出層壓、共擠出加工等形成層積體即可。
支持體,亦可為具備黏著劑層之黏著膜片。黏著膜片,係於如上所述之樹脂薄膜上具有黏著劑層,於黏著劑層上,可剝離地層積於上述接著劑層。因此,黏著膜片之黏著劑層,可由具有再剝離性之習知之黏著劑構成,藉由選擇紫外線硬化型、加熱發泡型、水膨潤型、弱黏型等的黏著劑,可容易地剝離接著劑層。
此外,接著膜片,亦可將支持體及接著劑層,預先沖模成與被著體(半導體晶圓等)同形狀或較晶圓形狀大的同心円狀而成之形狀。特別是,支持體及接著劑層所組成之層積體,以保持於長條的支持體上的形態為佳。
支持體的厚度,通常為10~500μm,以15~300μm為佳,以20~250μm程度特別佳。支持體為黏著膜片時,通常,在於支持體的厚度,黏著劑所組成之層佔1~50μm程度的厚度。此外,接著劑層的厚度,通常為2~500μm,以6~300μm為佳,以10~150μm程度特別佳。
於接著膜片,亦可於接著劑層的上面層積,用於在使用前,保護接著劑層或黏著膜片的黏著劑,對以下所述之夾具之固定用黏著劑層等之剝離薄膜。該剝離薄膜,使用於聚對苯二甲酸乙二醇酯薄膜或聚丙烯薄膜等的塑膠材料,塗佈矽樹脂等的剝離劑。此外,於接著膜片的表面外周部,亦可設置用於固定環框等的其他夾具之另外的黏著劑層或黏著膠帶。
接著膜片之製造方法,並無特別限定,可於支持體上,將接著劑組合物塗布乾燥,形成接著劑層而製造,此外,亦可將接著劑層設在用於保護上述接著劑層之剝離薄膜上,藉由將此轉印於上述支持體而製造。
其次,關於本發明之接著膜片之利用方法,將該接著膜片使用於半導體裝置之製造之情形為例說明。
(半導體裝置之製造方法)
關於本發明之半導體裝置之製造方法,包含於上述接著膜片之接著劑層黏著半導體晶圓,將該半導體晶圓及接著劑層切
割作成半導體晶片,於該半導體晶片的背面,使固著殘存於接著劑層由支持體剝離、將該半導體晶片,經由接著劑層載置於有機基板或導線架之晶粒墊部上、或層積於晶片時係於其他的半導體晶片上之步驟。
以下、詳細說明關於本發明之半導體裝置之製造方法。
關於本發明之半導體裝置之製造方法,首先,準備於表面形成電路,背面研削之半導體晶圓。
半導體晶圓可為矽晶圓,此外,亦可為砷化鎵等的化合物半導體晶圓。對晶圓表面的電路形成,可以包含蝕刻法、舉離法等的先前所汎用的方法之各式各樣的方法進行。其次,將半導體晶圓的電路面的相反面(背面)研削。研削法,並無特別限定,可以使用研磨機等之習知的手段研削。背面研削時,將用於保護表面電路而於電路面,黏貼稱為表面保護膜片之黏著膜片。背面研削,係將晶圓的電路面側(即,表面保護膜片側)以吸盤等固定,將沒有形成電路的背面側以研磨機研削。晶圓研削後的厚度,並無特別限定,通常為20~500μm程度。
接著,環框及半導體晶圓的背面側載置在關於本發明之接著膜片之接著劑層上,輕輕按壓,根據情形加熱使接著劑層軟化將半導體晶圓固定。接著,於接著劑層有調合能量線聚合性化合物(F)時,對接著劑層由支持體側照射能量線,使能量線聚合性化合物(F)硬化,提高接著劑層的凝集力,而降低接著劑層與支持體之間的接著力。照射之能量線,可舉紫
外線(UV)或電子線(EB)等,使用紫外線為佳。接著,使用切割鋸等的切割手段,將上述半導體晶圓及接著劑層切斷得到半導體晶片。此時的切斷深度,係半導體晶圓的厚度,與接著劑層的厚度之合計及加上切割鋸的磨耗部分的深度,接著劑層亦切割成與晶片相同尺寸。再者,能量線照射,亦可於黏貼半導體晶圓後,或在剝離(拾取)半導體晶片之前的任一階段進行均可,例如,可於切割後進行,此外,亦可於進行下述擴展步驟之後進行。再者,亦可將能量線照射分成複數次進行。
接著,按照必要,進行接著膜片的擴展,則半導體晶片的間隔被擴張,可使半導體晶片的拾取更容易進行。此時,於接著劑層與支持體之間,會發生偏離,減少接著劑層與支持體之間的接著力,提升半導體晶片的拾取性。如此地進行半導體晶片的拾取,則可將切斷之接著劑層,固著殘存於半導體晶片的背面再由支持體剝離。
經由接著接著劑層,將半導體晶片,載置於晶片搭載部之導線架之晶粒墊上或其他的半導體晶片(下段晶片)表面。晶片搭載部,為提升接著劑層的密著性,於載置半導體晶片之前加熱或於載置後加熱。加熱溫度,通常為80~200℃,以100~180℃為佳,加熱時間,通常為0.1秒~5分,以0.5秒~3分為佳。此外,載置時之加壓壓力,通常為1kPA~200MPa。
將半導體晶片載置於晶片搭載部之後,亦可不等如後所述利用在樹脂密封的加熱之接著劑層之本硬化,藉由在樹脂密封前進行加熱,使接著劑層本硬化。此時之加熱條件,係上述加熱溫度的範圍,加熱時間,通常為1~180分,以10~120
分為佳。
此外,亦可於載置後不進行加熱處理,作成假接著狀態,利用在於製造密封通常進行之樹脂密封的加熱使接著劑層硬化。藉由經過如此之步驟,使接著劑層硬化,可牢固地將半導體晶片與晶片搭載部接著。接著劑層,由於在晶粒接合條件下為流動化,故對晶片搭載部的凹凸亦可充分填埋,可防止空孔的發生,可提高密封可靠度。此時,經由接著劑層,搭載於晶片搭載部之半導體晶片,以接著劑層硬化前的狀態經過打線接合步驟。採用如此之製程時,藉由在於打線接合之加熱,貢獻於接著劑層的熱硬化的成分一部分進行反應,有降低在於半導體裝置之密封可靠度之虞。但是,藉由使用本發明之接著劑組合物,提升接著劑層對晶片的接著性,而有維持密封可靠度的趨勢。
本發明之接著劑組合物及接著膜片,在如上所述之使用方法之外,亦可使用於半導體化合物、玻璃、陶瓷、金屬等的接著。
以下,將本發明以實施例說明,惟本發明並非限定於該等實施例者。再者,在於以下的實施例及比較例,<GPC測定>及<耐IR回焊性評估>係如下進行。
<GPC測定>
關於各例所使用之丙烯酸聚合物,以凝膠滲透層析(GPC)法,測定以標準聚苯乙烯換算之重量平均分子量Mw、數目平均分子量Mn,此外,由測定值求得分子量分佈(Mw/Mn)。
測定裝置:於TOSO公司製的高速GPC裝置「HLC-8120GPC」,依序連接高速管柱「TSK gurd column HXL-H」、「TSK Gel GMHXL」、「TSK Gel G2000 HXL」(以上,均為TOSO公司製)測定。
管柱溫度:40℃,送液速度:1.0mL/分,感測器:示差折射率計
<耐IR回焊性評估>
(半導體晶片的製造)
於乾式拋光矽晶圓(150mm徑,厚度75μm)的研磨面,將實施例及比較例的接著膜片以上膠機(Lintec公司製,Adwill RAD2500)進行黏貼,固定於晶圓切割用環框。接著,使用切割裝置(株式會社DISCO製,DFD651)切割成8mm×8mm的晶片尺寸。切割時之切入量,係將支持體切入20μm。
(半導體封裝之製造)
於作為基板之貼銅箔層積板(三菱氣體化學株式會社CCL-HL830)之銅箔(18μm厚)形成電路圖案,於圖案上使用具有防焊油墨(太陽油墨製PSR-4000 AUS303)之基板(株式會社CHINO技研製LN001E-001 PCB(Au)AUS303)。將上述所得接著膜片上的晶片與接著劑層一起由支持體取起,於基板上,經由接著劑層以120℃,250gf,0.5秒的條件壓接,進一步於晶片上經由接著劑以同條件進行壓接。以鑄造樹脂(Kyocera chemical株式會社製KE-1100AS3),以密封厚度400μm密封(密封裝置Apicyamada株式會社製MPC-06M TriAl Press),以175℃使樹脂硬化5小時。接著,將密封的基板黏貼於切割帶(Lintec株式會
社製Adwill D-510T),使用切割裝置(株式會社DISCO製,DFD651)切割成8mm×8mm尺寸得到可靠度評估用半導體封裝。
(半導體封裝表面構裝性的評估)
將所得半導體封裝,以85℃,60%RH的條件下,放置168小時,使之吸濕之後,進行以最高溫度260℃,加熱時間1分鐘的IR回焊(回焊爐:相模理工製WL-15-20DNX型)3次時,接合部的浮起‧有無剝離、有無發生封裝龜裂,以掃描式超音波探傷裝置(日立建機finetec株式會社製Hye-Focus)及剖面觀察評估。於基板/半導體晶片的接合部觀察到0.5mm以上的剝離時判斷為「不良」,將27個封裝投入試驗計數沒有發生剝離之良品個數。
<以TERP法之丙烯酸聚合物之合成例>
將甲基丙烯酸酯(MA,東京化成(株)製),及2-羥基乙丙烯酸酯(HEA,東京化成(株)製)作為單體,以質量比95:5的比例使用,如下進行聚合,製造MA/HEA之隨機共聚物組成之丙烯酸聚合物(A-1)。首先,於氬取代之手套箱內,使乙基-2-甲基-2-正丁基碲基-丙酸酯37.7μL、甲基丙烯酸酯(同上)133g、2-羥基乙丙烯酸酯(同上)7.0g及2,2’-偶氮雙(異丁腈)(AIBN,大塚化學(株)製)8.1mg,以60℃反應20小時。
反應結束後,將反應器由手套箱取出,溶解於醋酸乙酯500ml之後,將該聚合物溶液通過以活性氧化鋁[和光純薬工業株式會社製]製作之管柱。添加醋酸乙酯使聚合物溶液的黏度成10,000MPa‧s(25℃)。所得聚合物之固形分為17.3質量%。此外,調整乙基-2-甲基-2-正丁基碲基-丙酸酯及AIBN
的添加量,以及聚合時間以外,以與丙烯酸聚合物(A-1)同様地藉由活性自由基聚合,製造丙烯酸聚合物(A-2)、(A-3)、及(A-5)。
<接著劑組合物>
將構成接著劑組合物之各成分示於下述。
(A)丙烯酸聚合物:
(A-1)~(A-3)以上述的合成例製造,第2表所示之重量平均分子量及分子量分佈之丙烯酸聚合物
(A-4)單體之種類及質量比例與(A-1)相同,以自由基聚合法製作之第2表所示重量平均分子量及分子量分佈之丙烯酸聚合物
(A-5)以上述TERP法,藉由合成例所製造之第2表所示之重量平均分子量及分子量分佈所示之丙烯酸聚合物
(A-6)、(A-7)單體之種類及質量比例與(A-1)相同,以自由基聚合法製作之第2表所示重量平均分子量及分子量分佈之丙烯酸聚合物
(B)環氧系熱硬化性化合物;雙酚A型環氧樹脂(日本環氧樹脂株式會社製EPICOAT 828,環氧當量189g/eq)
(C)熱硬化劑:酚醛型酚樹脂(昭和高分子株式會社製Shonol BRG-556,酚性羥基當量104g/eq)
(D)架橋劑:芳香族性聚異氰酸酯(日本聚氨酯工業株式會社製Coronate L)
(E)硬化促進劑:咪唑(四國化成工業株式會社製Curesol 2PHZ)
(H)偶合劑:矽烷偶合劑(三菱化學株式會社製MKC Silicate MSEP2)
(I-1)無機充填劑:日產化學公司製Silicasol MEK-ST
(I-2)無機充填劑:日產化學公司製MEK-AC-4101
(實施例及比較例)
(接著劑層)
將上述各成分,以第1表的量調合,得到接著劑組合物。將所得組合物之甲基乙基酮溶液(固形濃度61質量%),塗佈於矽酮剝離處理之剝離薄膜(Lintec株式會社製,SP-PET381031)之剝離處理面上,使乾燥後的厚度為10μm,乾燥(乾燥條件:以烘箱100℃,1分鐘)後,與支持體(聚乙烯薄膜,厚度100μm,表面張力33mN/m)黏貼,將接著劑層轉印於支持體上得到接著膜片。將所得接著膜片之耐IR回焊評估結果示於第2表。
Claims (8)
- 一種接著劑組合物,包含:藉由使用含有有機碲之化合物作為聚合起始劑之活性自由基聚合法,聚合丙烯酸系單體而得之重量平均分子量(Mw)為35萬以上的丙烯酸聚合物(A)、環氧系熱硬化性樹脂(B)及熱硬化劑(C)。
- 根據申請專利範圍第1項之接著劑組合物,其中進一步含有架橋劑(D),丙烯酸聚合物(A)具有可與該架橋劑反應之官能基。
- 根據申請專利範圍第2項之接著劑組合物,其中架橋劑(D)含有異氰酸酯基,丙烯酸聚合物(A)含有羥基。
- 根據申請專利範圍第1至3項中任一項之接著劑組合物,其中丙烯酸聚合物(A)之重量平均分子量(Mw)為90萬以下。
- 根據申請專利範圍第1至4項中任一項之接著劑組合物丙烯酸聚合物(A),其中分子量分佈(Mw/Mn)為3以下。
- 一種單層接著薄膜,以上述申請專利範圍第1至5項中任一項之接著劑組合物組成。
- 一種接著膜片,將上述申請專利範圍第1至5項中任一項之接著劑組合物所組成之接著劑層,形成於支持體上而成。
- 一種半導體裝置之製造方法,包含:將半導體晶圓黏貼於申請專利範圍第7項之接著膜片之接著劑層,將上述半導體晶圓切割成半導體晶片,使接著劑層固著殘存於上述半導體晶片,再由支持體剝離,將上述半導體晶片,經由上述接著劑層接著於晶粒墊部上,或其他的半導體晶片上之步驟。
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JP (1) | JP6340004B2 (zh) |
KR (2) | KR102255547B1 (zh) |
CN (1) | CN105358647B (zh) |
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Cited By (2)
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TWI572886B (zh) * | 2015-09-02 | 2017-03-01 | 巴川製紙所股份有限公司 | 保護膜、膜積層體及偏光板 |
TWI785196B (zh) * | 2018-01-30 | 2022-12-01 | 日商昭和電工材料股份有限公司 | 熱硬化性樹脂組成物、膜狀接著劑、接著片及半導體裝置的製造方法 |
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JP2017090718A (ja) * | 2015-11-11 | 2017-05-25 | 旭化成株式会社 | ペリクル |
CN109790420A (zh) * | 2016-09-30 | 2019-05-21 | 日东电工株式会社 | 光学用粘合剂层、光学用粘合剂层的制造方法、带粘合剂层的光学膜、及图像显示装置 |
JP6813031B2 (ja) * | 2016-12-22 | 2021-01-13 | 日本ゼオン株式会社 | アクリルゴム、アクリルゴム組成物、アクリルゴム架橋物、及びアクリルゴムの製造方法 |
TW201930508A (zh) * | 2017-10-27 | 2019-08-01 | 日商琳得科股份有限公司 | 保護膜形成用膜、保護膜形成用複合片及半導體晶片的製造方法 |
JP2022033064A (ja) * | 2018-12-19 | 2022-02-28 | 昭和電工マテリアルズ株式会社 | フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3572653B2 (ja) * | 1994-02-03 | 2004-10-06 | 住友電気工業株式会社 | フレキシブル印刷配線板用接着剤組成物 |
KR100889101B1 (ko) | 2000-02-15 | 2009-03-17 | 히다치 가세고교 가부시끼가이샤 | 접착제 조성물, 그 제조 방법, 이것을 이용한 접착 필름,반도체 탑재용 기판 및 반도체 장치 |
TWI347337B (en) | 2006-04-14 | 2011-08-21 | Otsuka Chemical Co Ltd | Resin composition and heat resistant adhesive |
JP5213313B2 (ja) * | 2006-05-23 | 2013-06-19 | リンテック株式会社 | 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法 |
JP5083556B2 (ja) * | 2007-06-21 | 2012-11-28 | 東亞合成株式会社 | リビングラジカル重合開始剤及び重合体の製造方法 |
JP5500787B2 (ja) * | 2008-06-03 | 2014-05-21 | リンテック株式会社 | 接着剤組成物、接着シートおよび半導体装置の製造方法 |
JP5627961B2 (ja) * | 2009-09-07 | 2014-11-19 | リンテック株式会社 | 保護フィルム及び保護フィルムの製造方法 |
US9862167B2 (en) * | 2011-12-02 | 2018-01-09 | Sharp Kabushiki Kaisha | Laminate including antireflective moth-eye film and protection film |
KR101752992B1 (ko) * | 2013-05-28 | 2017-07-03 | 린텍 가부시키가이샤 | 접착제 조성물, 접착 시트 및 반도체 장치의 제조 방법 |
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TWI572886B (zh) * | 2015-09-02 | 2017-03-01 | 巴川製紙所股份有限公司 | 保護膜、膜積層體及偏光板 |
TWI785196B (zh) * | 2018-01-30 | 2022-12-01 | 日商昭和電工材料股份有限公司 | 熱硬化性樹脂組成物、膜狀接著劑、接著片及半導體裝置的製造方法 |
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SG11201600430WA (en) | 2016-02-26 |
JPWO2015016352A1 (ja) | 2017-03-02 |
US20160160094A1 (en) | 2016-06-09 |
WO2015016352A1 (ja) | 2015-02-05 |
KR20160039197A (ko) | 2016-04-08 |
US10131824B2 (en) | 2018-11-20 |
KR102255547B1 (ko) | 2021-05-24 |
CN105358647B (zh) | 2017-10-24 |
KR102346224B1 (ko) | 2021-12-31 |
CN105358647A (zh) | 2016-02-24 |
KR20210059025A (ko) | 2021-05-24 |
TWI654267B (zh) | 2019-03-21 |
JP6340004B2 (ja) | 2018-06-06 |
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