TW201443580A - 檢查方法和裝置，微影裝置，微影製程單元及器件製造方法 - Google Patents

檢查方法和裝置，微影裝置，微影製程單元及器件製造方法 Download PDF

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TW201443580A
TW201443580A TW103126652A TW103126652A TW201443580A TW 201443580 A TW201443580 A TW 201443580A TW 103126652 A TW103126652 A TW 103126652A TW 103126652 A TW103126652 A TW 103126652A TW 201443580 A TW201443580 A TW 201443580A
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diffraction
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De Kerkhof Marcus Adrianus Van
Der Schaar Maurits Van
Andreas Fuchs
Martyn John Coogans
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Asml Netherlands Bv
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    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
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Abstract

本發明在一影像平面中或附近使用一繞射光譜之量測，以便判定一經曝光基板之一性質。詳言之，正第一繞射級及負第一繞射級經分離或發散、偵測且其強度經量測以判定該基板上之經曝光層之疊對(或其他性質)。

Description

檢查方法和裝置，微影裝置，微影製程單元及器件製造方法
本發明係關於可用於(例如)藉由微影技術來製造器件之檢查方法，且係關於使用微影技術來製造器件之方法。
微影裝置係將所要圖案施加至基板上(通常施加至基板之目標部分上)的機器。微影裝置可用於(例如)積體電路(IC)之製造中。在該情況下，圖案化器件(其或者被稱作光罩或主光罩)可用以產生待形成於IC之個別層上的電路圖案。可將此圖案轉印至基板(例如，矽晶圓)上之目標部分(例如，包括晶粒之一部分、一個晶粒或若干晶粒)上。圖案之轉印通常係經由成像至提供於基板上之輻射敏感材料(抗蝕劑)層上。一般而言，單一基板將含有經順次圖案化之鄰近目標部分的網路。已知微影裝置包括：所謂的步進器，其中藉由一次性將整個圖案曝光至目標部分上來照射每一目標部分；及所謂的掃描器，其中藉由在給定方向(「掃描」方向)上經由輻射光束而掃描圖案同時平行或反平行於此方向而同步地掃描基板來照射每一目標部分。亦有可能藉由將圖案壓印至基板上而將圖案自圖案化器件轉印至基板。
為了監控微影製程，需要量測經圖案化基板之參數，例如，形成於基板中或基板上之順次層之間的疊對誤差。存在用於進行微影製 程中所形成之顯微結構之量測的各種技術，包括掃描電子顯微鏡及各種專門工具之使用。一專門檢查工具形式為散射計，其中將輻射光束引導至基板之表面上之目標上，且量測經散射光束或經反射光束之性質。藉由比較光束在其已由基板反射或散射之前與之後的性質，可判定基板之性質。此可(例如)藉由比較經反射光束與儲存於與已知基板性質相關聯之已知量測庫中的資料而進行。已知兩種主要類型之散射計。分光散射計將寬頻帶輻射光束引導至基板上，且量測經散射至特定窄角範圍中之輻射的光譜(作為波長之函數的強度)。角解析散射計使用單色輻射光束且量測經散射輻射之作為角度之函數的強度。
如以上所提及，將圖案形成於基板之表面上，此圖案表示IC或在基板上所製造之任何產品。製造圖案之方式為：將重複抗蝕劑層放於基板上，接著進行曝光，接著進行清洗或烘焙或其他該等後曝光製程。需要使待曝光之層中之每一者與其下方之層對準，使得圖案儘可能精確地建置，從而確保在需要時之有效電連接且亦使能夠形成愈來愈小之產品，同時避免相鄰結構之間的串擾。散射計可用於判定後續層是否如其應對準之方式而對準。後續層之對準被稱作疊對。疊對誤差意謂層相對於其下方(或實際上其上方)之層而偏移。若層相對於其下方之層而偏移，則將降低此等各別層內之結構之間的電接觸之品質。在極端情況下，可能發生電接觸或短路之全部損失。在產品層相對於其下方之產品層而旋轉的情況下亦如此。可使用散射計來量測此等類型之疊對誤差。
為了量測且藉此校正(或較佳地防止)疊對誤差，將測試圖案形成於具有已知性質且使用輻射光束及散射計偵測器而測試之基板上，散射計偵測器量測已自測試圖案所反射之輻射光束之繞射光譜。為了降低由此等測試圖案所佔據之空間量，通常將測試圖案形成於基板上之晶粒與場之間的切割道中。此等切割道隨後將被鋸開，以便分離各種 產品，且因此不可用於產品。測試圖案通常被稱作疊對量測目標或疊對目標。然而，切割道較小(以針對產品而留出更多空間)且出於各種目的而通常亦包裝有較大範圍之測試圖案。由於用於產品上疊對量測(亦即，對亦含有產品之基板之量測，與可純粹用於測試之測試基板相對)之疊對目標之相對較大尺寸，實務上，目標係在晶粒之間的切割道中。然而，此意謂使用模型來預測實際產品疊對，因為不直接量測實際產品疊對。
在將切割道疊對目標內插至晶粒內產品(in-die product)時所使用之模型為近似值。此等近似值可能具有某些誤差。在更少目標可用於切割道中之情況下，可使誤差更糟。通常為以下情況：少於最佳數目之數目的疊對目標為可用的，因為切割道「面積」(real estate)對微影裝置(如以上所提及)之使用者有價值。
為了最小化以上所提及之內插誤差，需要能夠量測晶粒內目標上之疊對。因為基板「面積」在晶粒內部非常珍貴，所以需要使此等疊對目標儘可能地小且較佳地為10乘10微米或更小。然而，在極小目標之情況下，存在可導致信號雜訊比問題之嚴格尺寸要求。此外，信號雜訊比及疊對目標與相鄰產品結構之間的串擾可為不良的。此係因為照明光束將限於其可聚焦至之尺寸，該尺寸可由於所要極小目標尺寸而大於目標自身。
需要提供一種用於量測疊對之技術，其可使用可用對準輻射光束而在小晶粒內疊對目標上進行。
根據本發明之一態樣，提供一種經組態以量測基板之性質的檢查裝置、散射計、微影裝置或微影單元，其包括：輻射源，輻射源經組態以輸出輻射光束，輻射光束經引導至基板之表面；準直器，準直器經組態以在一旦輻射光束自基板之表面反射的情況下便準直及聚焦 輻射光束，且分離經反射輻射光束之繞射級；及偵測器，偵測器經組態以偵測經反射輻射光束之角度解析光譜，其中基板之性質係藉由在定位於輻射光束朝向準直器之影像平面會聚至輻射光束自影像平面發散之範圍內的平面中量測經反射光譜之性質而量測。
根據本發明之另一態樣，提供一種量測基板之性質的方法，其包括：藉由輻射光束來照射基板上之目標；自目標反射輻射光束；使用光學系統來準直及聚焦經反射輻射光束；發散經反射輻射光束之第一繞射級；在定位於經反射輻射光束朝向光學系統之影像平面會聚至經反射輻射光束自影像平面發散之範圍內的平面中偵測第一繞射級之強度；及自第一繞射級之強度而判定基板之目標之性質。
根據本發明之又一態樣，提供一種器件製造方法，其包括：使用微影裝置以在基板上形成圖案；及藉由以下步驟來判定與圖案之參數有關的值：藉由輻射光束來照射基板上之目標；自目標反射輻射光束；使用光學系統來準直及聚焦經反射輻射光束；發散經反射輻射光束之第一繞射級；在定位於經反射輻射光束朝向光學系統之影像平面會聚至經反射輻射光束自影像平面發散之範圍內的平面中偵測第一繞射級之強度；及自第一繞射級之強度而判定基板之目標之性質。
2‧‧‧寬頻帶(白光)輻射投影儀
4‧‧‧分光計偵測器
10‧‧‧光譜
11‧‧‧背部投影式光瞳平面
12‧‧‧透鏡系統
13‧‧‧干涉濾光器
14‧‧‧參考鏡面
15‧‧‧透鏡系統
16‧‧‧部分反射表面
17‧‧‧偏振器
18‧‧‧偵測器
30‧‧‧目標
40‧‧‧第一接物鏡
50‧‧‧透鏡
60‧‧‧空間濾光器
62‧‧‧第二空間濾光器
70‧‧‧光學楔形體
72‧‧‧光學楔形體
80‧‧‧透鏡
82‧‧‧透鏡
100‧‧‧雙視覺效應/經聚焦影像/經偵測資訊
102‧‧‧目標影像/雙視覺效應
104‧‧‧模糊影像/模糊目標
AD‧‧‧調整器
B‧‧‧輻射光束
BD‧‧‧光束傳送系統
BK‧‧‧烘焙板
C‧‧‧目標部分
CCD‧‧‧偵測器
CH‧‧‧冷卻板
CO‧‧‧聚光器
DE‧‧‧顯影器
I‧‧‧強度
IF‧‧‧位置感測器
IL‧‧‧照明器
IN‧‧‧積光器
IP‧‧‧影像平面
I/O1‧‧‧輸入/輸出埠
I/O2‧‧‧輸入/輸出埠
LA‧‧‧微影裝置
LACU‧‧‧微影控制單元
LB‧‧‧裝載盤
LC‧‧‧微影單元
M1‧‧‧光罩對準標記
M2‧‧‧光罩對準標記
MA‧‧‧圖案化器件
MT‧‧‧圖案化器件支撐件
P1‧‧‧基板對準標記
P2‧‧‧基板對準標記
PL‧‧‧投影系統
PM‧‧‧第一定位器
PP‧‧‧光瞳平面
PU‧‧‧製程單元
PW‧‧‧第二定位器
RO‧‧‧機器人
SC‧‧‧旋塗器
SCS‧‧‧監督控制系統
SM1‧‧‧散射計
SM2‧‧‧散射計
SO‧‧‧輻射源
TCU‧‧‧軌道控制單元
W‧‧‧基板
WT‧‧‧基板台
X‧‧‧方向
Y‧‧‧方向
λ‧‧‧波長
圖1描繪根據本發明之一實施例的微影裝置；圖2描繪根據本發明之一實施例的微影單元或叢集；圖3描繪根據本發明之一實施例的散射計；圖4描繪根據本發明之一實施例的散射計；圖5描繪根據本發明之一實施例的照明裝備；圖6描繪根據本發明之一實施例的照明裝備；且圖7描繪根據本發明之一實施例的照明裝備。
現將參看隨附示意性圖式而僅藉由實例來描述本發明之實施例，在該等圖式中，對應參考符號指示對應部分。
圖1示意性地描繪微影裝置。裝置包括：照明系統(照明器)IL，其經組態以調節輻射光束B(例如，UV輻射或DUV輻射)；圖案化器件支撐件或支撐結構(例如，光罩台)MT，其經建構以支撐圖案化器件(例如，光罩)MA且連接至經組態以根據某些參數來精確地定位圖案化器件之第一定位器PM；基板台(例如，晶圓台)WT，其經建構以固持基板(例如，塗覆抗蝕劑之晶圓)W且連接至經組態以根據某些參數來精確地定位基板之第二定位器PW；及投影系統(例如，折射投影透鏡系統)PL，其經組態以將由圖案化器件MA賦予至輻射光束B之圖案投影至基板W之目標部分C(例如，包括一或多個晶粒)上。
照明系統可包括用於引導、成形或控制輻射之各種類型的光學組件，諸如，折射、反射、磁性、電磁、靜電或其他類型之光學組件，或其任何組合。
圖案化器件支撐件以視圖案化器件之定向、微影裝置之設計及其他條件(諸如，圖案化器件是否固持於真空環境中)而定的方式來固持圖案化器件。圖案化器件支撐件可使用機械、真空、靜電或其他夾持技術來固持圖案化器件。圖案化器件支撐件可為(例如)框架或台，其可根據需要而為固定或可移動的。圖案化器件支撐件可確保圖案化器件(例如)相對於投影系統而處於所要位置。可認為本文對術語「主光罩」或「光罩」之任何使用均與更通用之術語「圖案化器件」同義。
本文所使用之術語「圖案化器件」應被廣泛地解釋為指代可用以在輻射光束之橫截面中向輻射光束賦予圖案以便在基板之目標部分中形成圖案的任何器件。應注意，例如，若被賦予至輻射光束之圖案 包括相移特徵或所謂的輔助特徵，則圖案可能不會精確地對應於基板之目標部分中的所要圖案。通常，被賦予至輻射光束之圖案將對應於目標部分中所形成之器件(諸如，積體電路)中的特定功能層。
圖案化器件可為透射或反射的。圖案化器件之實例包括光罩、可程式化鏡面陣列，及可程式化LCD面板。光罩在微影術中為熟知的，且包括諸如二元交變相移及衰減相移之光罩類型，以及各種混合光罩類型。可程式化鏡面陣列之一實例使用小鏡面之矩陣配置，該等小鏡面中之每一者可個別地傾斜，以便在不同方向上反射入射輻射光束。傾斜鏡面將圖案賦予於由鏡面矩陣所反射之輻射光束中。
本文所使用之術語「投影系統」應被廣泛地解釋為涵蓋任何類型之投影系統，包括折射、反射、反射折射、磁性、電磁及靜電光學系統或其任何組合，其適合於所使用之曝光輻射，或適合於諸如浸沒液體之使用或真空之使用的其他因素。可認為本文對術語「投影透鏡」之任何使用均與更通用之術語「投影系統」同義。
如此處所描繪，裝置為透射類型(例如，使用透射光罩)。或者，裝置可為反射類型(例如，使用如以上所提及之類型的可程式化鏡面陣列，或使用反射光罩)。
微影裝置可為具有兩個(雙平台)或兩個以上基板台(及/或兩個或兩個以上光罩台)的類型。在該等「多平台」機器中，可並行地使用額外台，或可在一或多個台上進行預備步驟，同時將一或多個其他台用於曝光。
微影裝置亦可為如下類型：其中基板之至少一部分可由具有相對較高折射率之液體(例如，水)覆蓋，以便填充投影系統與基板之間的空間。亦可將浸沒液體施加至微影裝置中之其他空間，例如，光罩與投影系統之間。浸沒技術在此項技術中被熟知用於增加投影系統之數值孔徑。如本文所使用之術語「浸沒」不意謂諸如基板之結構必須 浸漬於液體中，而是僅意謂液體在曝光期間位於投影系統與基板之間。
參看圖1，照明器IL自輻射源SO接收輻射光束。舉例而言，當輻射源為準分子雷射時，輻射源與微影裝置可為單獨實體。在該等情況下，不認為輻射源形成微影裝置之一部分，且輻射光束係借助於包括(例如)適當引導鏡面及/或光束放大器之光束傳送系統BD而自輻射源SO傳遞至照明器IL。在其他情況下，例如，當輻射源為汞燈時，輻射源可為微影裝置之整體部分。輻射源SO及照明器IL連同光束傳送系統BD(在需要時)可被稱作輻射系統。
照明器IL可包括用於調整輻射光束之角強度分布的調整器AD。通常，可調整照明器之光瞳平面中之強度分布的至少外部徑向範圍及/或內部徑向範圍(通常分別被稱作σ外部及σ內部)。此外，照明器IL可包括各種其他組件，諸如，積光器IN及聚光器CO。照明器可用以調節輻射光束，以在其橫截面中具有所要均一性及強度分布。
輻射光束B入射於被固持於圖案化器件支撐件(例如，光罩台)MT上之圖案化器件(例如，光罩)MA上，且係由圖案化器件圖案化。在橫穿圖案化器件(例如，光罩)MA後，輻射光束B穿過投影系統PL，投影系統PL將光束聚焦至基板W之目標部分C上。借助於第二定位器PW及位置感測器IF(例如，干涉量測器件、線性編碼器、2-D編碼器或電容性感測器)，基板台WT可精確地移動，例如，以便在輻射光束B之路徑中定位不同目標部分C。類似地，第一定位器PM及另一位置感測器(其未在圖1中被明確地描繪)可用以(例如)在自光罩庫之機械擷取之後或在掃描期間相對於輻射光束B之路徑來精確地定位圖案化器件(例如，光罩)MA。一般而言，可借助於形成第一定位器PM之一部分的長衝程模組(粗略定位)及短衝程模組(精細定位)來實現圖案化器件支撐件(例如，光罩台)MT之移動。類似地，可使用形成第二定位器PW 之一部分的長衝程模組及短衝程模組來實現基板台WT之移動。在步進器(與掃描器相對)之情況下，圖案化器件支撐件(例如，光罩台)MT可僅連接至短衝程致動器，或可為固定的。可使用光罩對準標記M1、M2及基板對準標記P1、P2來對準圖案化器件(例如，光罩)MA及基板W。儘管如所說明之基板對準標記佔用專用目標部分，但其可位於目標部分之間的空間中(此等被稱為切割道對準標記)。類似地，在一個以上晶粒提供於圖案化器件(例如，光罩)MA上之情形中，光罩對準標記可位於該等晶粒之間。
所描繪裝置可用於以下模式中之至少一者中：
1.在步進模式中，在將被賦予至輻射光束之整個圖案一次性投影至目標部分C上時，使圖案化器件支撐件(例如，光罩台)MT及基板台WT保持基本上靜止(亦即，單重靜態曝光)。接著，使基板台WT在X及/或Y方向上移位，使得可曝光不同目標部分C。在步進模式中，曝光場之最大尺寸限制單重靜態曝光中所成像之目標部分C的尺寸。
2.在掃描模式中，在將被賦予至輻射光束之圖案投影至目標部分C上時，同步地掃描圖案化器件支撐件(例如，光罩台)MT及基板台WT(亦即，單重動態曝光)。可藉由投影系統PL之放大率(縮小率)及影像反轉特性來判定基板台WT相對於圖案化器件支撐件(例如，光罩台)MT之速度及方向。在掃描模式中，曝光場之最大尺寸限制單重動態曝光中之目標部分的寬度(在非掃描方向上)，而掃描運動之長度判定目標部分之高度(在掃描方向上)。
3.在另一模式中，在將被賦予至輻射光束之圖案投影至目標部分C上時，使圖案化器件支撐件(例如，光罩台)MT保持基本上靜止，從而固持可程式化圖案化器件，且移動或掃描基板台WT。在此模式中，通常使用脈衝式輻射源，且在基板台WT之每一移動之後或在掃描期間的順次輻射脈衝之間根據需要而更新可程式化圖案化器件。此 操作模式可易於應用於利用可程式化圖案化器件(諸如，如以上所提及之類型的可程式化鏡面陣列)之無光罩微影術。
亦可使用對以上所描述之使用模式之組合及/或變化或完全不同的使用模式。
如圖2所示，微影裝置LA形成微影單元LC(有時亦被稱作微影單元或叢集)之一部分，其亦包括用以對基板執行預曝光及後曝光製程之裝置。通常，此等裝置包括用以沈積抗蝕劑層之旋塗器SC、用以顯影經曝光抗蝕劑之顯影器DE、冷卻板CH及烘焙板BK。基板處置器或機器人RO自輸入/輸出埠I/O1、I/O2拾取基板、在不同製程裝置之間移動基板，且接著將基板傳送至微影裝置之裝載盤LB。通常被共同地稱作軌道之此等器件係在軌道控制單元TCU之控制下，軌道控制單元TCU自身係由監督控制系統SCS控制，監督控制系統SCS亦經由微影控制單元LACU而控制微影裝置。因此，不同裝置可經操作以最大化產出率及製程效率。
為了正確且一致地曝光由微影裝置所曝光之基板，需要檢查經曝光基板以量測性質，諸如，後續層之間的疊對誤差、線厚度、臨界尺寸(CD)，等等。若偵測到誤差，則可對後續基板之曝光進行調整，尤其係在檢查可足夠迅速且快速地進行以使得同一分批之其他基板仍待曝光的情況下。又，已經曝光之基板可經剝離及重做-以改良良率-或廢除-藉此避免對已知為有缺陷之基板執行曝光。在基板之僅某些目標部分為有缺陷之情況下，可僅對為良好之彼等目標部分執行另外曝光。
使用檢查裝置以判定基板之性質，且特別係判定不同基板或同一基板之不同層之性質如何在層與層之間變化。檢查裝置可整合至微影裝置LA或微影單元LC中或可為單獨器件。為了致能最快速之量測，需要使檢查裝置在曝光之後立即量測經曝光抗蝕劑層中之性質。 然而，抗蝕劑中之潛影具有極低對比度-在抗蝕劑之已曝光至輻射之部分與抗蝕劑之尚未曝光至輻射之部分之間僅存在極小的折射率差-且並非所有檢查裝置均具有對進行潛影之有用量測的充分敏感性。因此，可在後曝光烘焙步驟(PEB)之後採取量測，後曝光烘焙步驟(PEB)通常為在經曝光基板上所進行之第一步驟且其增加抗蝕劑之經曝光部分與未經曝光部分之間的對比度。在此階段，抗蝕劑中之影像可被稱作半潛伏的。亦有可能進行經顯影抗蝕劑影像之量測-此時，抗蝕劑之經曝光部分或未經曝光部分已被移除-或在圖案轉印步驟(諸如，蝕刻)之後進行經顯影抗蝕劑影像之量測。後者可能性限制重做有缺陷基板之可能性，但仍可提供有用資訊。
圖3描繪可用於本發明之一實施例中的散射計SM1。散射計SM1包括寬頻帶(白光)輻射投影儀2，其將輻射投影至基板W上。經反射輻射傳遞至分光計偵測器4，其量測鏡面經反射輻射之光譜10(作為波長(λ)之函數的強度(I))。自此資料，可藉由製程單元PU來重新建構引起經偵測光譜之結構或剖面，例如，藉由嚴密耦合波分析及非線性回歸或藉由與如圖3之底部處所示之模擬光譜庫比較。一般而言，對於重新建構，結構之通用形式為已知的，且根據對製造結構所採用之製程的認識而採取某些參數，從而僅留下結構之少許參數以自散射量測資料加以判定。該散射計可經組態為正入射散射計或斜入射散射計。
圖4中展示可用於本發明之一實施例的另一散射計SM2。在此器件中，由輻射源2所發射之輻射係使用透鏡系統12經由干涉濾光器13及偏振器17而聚焦、由部分反射表面16反射且經由顯微鏡接物鏡15而聚焦至基板W上，顯微鏡接物鏡15具有高數值孔徑(NA)，較佳地為至少0.9且更佳地為至少0.95。浸沒散射計可甚至具有數值孔徑超過1之透鏡。經反射輻射接著透過部分反射表面16而進入偵測器18，以便偵測散射光譜。偵測器可位於處於透鏡系統15之焦距的背部投影式光瞳 平面11中，然而，光瞳平面可代替地藉由輔助光學器件(未圖示)而再成像至偵測器上。光瞳平面係輻射之徑向位置界定入射角且角位界定輻射之方位角的平面。偵測器較佳地為二維偵測器，使得可量測基板目標30之二維角散射光譜。偵測器18可為(例如)CCD或CMOS感測器陣列，且可使用為(例如)每圖框40毫秒之積分時間。
舉例而言，通常使用參考光束以量測入射輻射之強度。為了進行此過程，當輻射光束入射於光束分光器16上時，輻射光束之一部分透過光束分光器而作為朝向參考鏡面14之參考光束。參考光束接著投影至同一偵測器18之不同部分上。
干涉濾光器13之集合可用以選擇在(比如)405奈米至790奈米或甚至更低(諸如，200奈米至300奈米)之範圍內的所關注波長。干涉濾光器可為可調諧的，而非包括不同濾光器之集合。可代替干涉濾光器而使用光柵。
偵測器18可量測經散射輻射在單一波長(或窄波長範圍)下之強度、單獨地在多個波長下之強度或在一波長範圍內所積分之強度。此外，偵測器可單獨地量測橫向磁偏振輻射及橫向電偏振輻射之強度，及/或橫向磁偏振輻射與橫向電偏振輻射之間的相位差。
使用寬頻帶輻射源或光源(亦即，具有寬光頻率或波長範圍且因此具有寬顏色範圍之輻射源或光源)為可能的，其給出較大光展量(etendue)，從而允許多個波長之混合。寬頻帶中之複數個波長較佳地各自具有為δλ之頻寬及為至少2 δλ(亦即，頻寬之兩倍)之間隔。若干輻射「源」可為延伸型輻射源之已使用光纖束而分裂的不同部分。以此方式，可在多個波長下並行地量測角度解析散射光譜。可量測3-D光譜(波長及兩個不同角度)，其與2-D光譜相比含有更多資訊。此允許量測更多資訊，其增加度量衡製程穩固性。此係在EP1,628,164A中得以更詳細地描述。
基板W上之目標30可為光柵，其經印刷，使得在顯影之後，條狀物(bar)係由固體抗蝕劑線形成。條狀物可或者經蝕刻至基板中。此圖案對微影投影裝置(特別係投影系統PL)中之色像差敏感，且照明對稱性及該等像差之存在將使其自身表現為經印刷光柵之變化。因此，將經印刷光柵之散射量測資料用以重新建構光柵。根據對印刷步驟及/或其他散射量測製程之認識，可將光柵之參數(諸如，線寬及形狀)輸入至由製程單元PU所執行之重新建構製程。
如以上所提及，圖3及圖4之散射計可用以量測後續曝光層之疊對。用於此製程之疊對目標通常係以週期性光柵之形式。藉由首先自一方向(在特定入射角及方位角下)且隨後自相反方向(例如，相同入射角，但相反方位角)照明此光柵，繞射光譜經形成且可(例如)在接物鏡12之光瞳平面中經偵測。
首先自一方向接著自另一方向照明目標會引起兩個可量測強度：一可量測強度係針對已自每一方向所反射之每一輻射光束。可接著自由第一級經繞射射線(亦產生自基板之表面上之目標)所形成之目標影像減去此等強度。自目標影像減去個別強度將引起將目標之任何不對稱性展示為強度變化的強度影像。
然而，此方法需要在曝光之間具有孔徑改變的兩個連續曝光。此降低產出率且可引入額外誤差源(例如，在用於第一方向上之照明輻射與用於第二方向上之照明輻射不精確地相同的情況下)。
因此，此處提議使用相對較大量測光點而藉由基於影像之技術來量測小晶粒內疊對目標(例如，10乘10微米)。量測光點為經聚焦照明光束之尺寸。本發明之一實施例的量測光點可顯著地大於疊對目標自身。當使用基於影像之技術時，將偵測器定位於用以準直及聚焦自疊對目標所反射之光之光學系統的影像平面中。光學系統可在下文中被廣泛地稱作準直器。影像平面為重新聚集已反射輻射之物件(亦 即，在此情況下為疊對目標)之影像的平面。若將偵測器置放於此影像平面中，則將偵測到物件之清晰影像。此係與其他方法形成對比，在其他方法中，將偵測器置放於用以準直及聚焦自待檢查之物件所反射之輻射之光學系統的光瞳平面中。
由於本發明之一實施例的偵測器在準直器中之不同位置，偵測器可不同於現有散射計中所使用之其他偵測器。或者，可移動現有偵測器，或可調整光學器件，使得將光學系統之影像平面定位於偵測器表面處。
圖5展示本發明之一實施例。輻射光束係自定位於基板W上之疊對目標30而反射。目標可為光柵或易於經重新建構或可用於研究自其所繞射之輻射之不對稱性的其他形狀。疊對目標可為晶粒內的；亦即，在產品區域內，而非在切割道中，因此給出產品區域自身之疊對的更精確指示。目標可極小：小於輻射光束之量測光點。
在此實施例中，光學系統或準直器包括第一接物鏡40，第一接物鏡40可準直已自基板W之目標30所反射的發散光束。光瞳平面PP之另一側上的後續透鏡聚焦經反射輻射光束，且導致其會聚至光軸上之影像平面中之點。輻射光束無阻礙地發散且由透鏡50再次準直。
輻射光束之由光學系統或準直器所進行之此反射、準直及聚焦引起劃分成繞射級之繞射光譜，其中第零級係在輻射光束之中心且漸進更高級係徑向地向外定位。繞射光譜被稱作「角度解析」光譜。只要接物鏡40具有足夠高之數值孔徑來捕獲及準直直至經繞射輻射之至少第一繞射級，則入射輻射可在大角度範圍下入射。接物鏡40之數值孔徑可隨著在基板W與接物鏡40之間引入液體(諸如，水)而增加至超過0.9且甚至超過1。如以上所描述，此被稱作系統之「浸沒」。
可將空間濾光器60配置於光學系統或準直器之第二光瞳平面中。空間濾光器60之目的係阻止經反射輻射之第零繞射級到達偵測器 CCD，第零繞射級係在繞射光譜之中心。此形成「暗場」(darkfield)條件，因此增加經偵測影像之對比度且使第一級之不對稱性更明顯。空間濾光器輔助移除除了已自待量測之物件(亦即，目標30)所散射之輻射以外的所有輻射。此使量測光點能夠大於目標30，因為可使用空間濾光器60而濾出來自環繞目標之區域的非散射輻射。
允許在第零級之徑向外部處的第一繞射級穿過空間濾光器60。較佳地，僅第一繞射級透過空間濾光器60。應亦藉由空間濾光器60來阻止更高繞射級。穿過空間濾光器之正第一繞射級及負第一繞射級中之每一者可隨後藉由各別光學楔形體70而發散。此允許兩個第一級經繞射光束彼此分離，使得其形成「雙視覺」效應100且在偵測器CCD處經單獨地偵測。此等第一級經繞射射線可隨後藉由另一透鏡80而聚焦，以便提供另一影像平面IP，其中在經分離第一繞射級中目標30之影像將為聚焦且清晰的。在此影像平面IP處，第一繞射級碰撞於偵測器CCD上。
為了防止此等兩個第一繞射級在相機上合併成單一影像，可將光學楔形體70引入至光瞳平面中(在空間濾光器60之後)且引入至正第一繞射級及負第一繞射級之路徑中。或者，可將具有相反(或至少不同)傾斜之楔形體應用於兩個繞射級。光學楔形體引起兩個影像之間自+1第一繞射級與-1第一繞射級之移位，使得兩個影像在影像平面IP上經單獨地偵測，但未(必要地)在光軸上經單獨地偵測。此被稱作「雙視覺」量測100。
導致雙視覺效應100，因為輻射未會聚於光學系統或準直器之中心光軸上以形成單一影像。更確切而言，正第一繞射級及負第一繞射級中之每一者係使用透鏡80而個別地聚焦至偵測器CCD上之單獨位置上，因此形成兩個經聚焦影像100。可接著比較兩個單獨影像。
如圖5所示，較佳地同時偵測正第一繞射級及負第一繞射級兩 者。以此方式，兩個影像係自基板W而形成於目標30之偵測器處。經偵測資訊100係展示於圖5之底部處。在左邊的為+1繞射級且在右邊的為-1繞射級。應瞭解，視光學系統或準直器而定，此等繞射級可反向或以不同方式而顯示。
可比較兩個影像100之強度，且可將經量測強度之不對稱性鏈接至目標30之疊對誤差。
與首先自一方向且接著自另一方向照明疊對目標相比，諸如以上所描述之基於影像之量測的基於影像之量測具有三個主要益處。第一益處為更高產出率。因為可同時量測同一目標之不同量測，所以可更快速地進行疊對之量測且可將結果反饋至微影曝光系統，因此增加可形成正確地曝光之基板的速度。第二益處為：本發明之一實施例的系統對於連續曝光之間的變化較不敏感。此係因為僅需要疊對目標30之一曝光。第三益處為：藉由一共同入射射線(而非藉由兩個僅部分相關入射射線)來產生+1繞射級及-1繞射級。照明輻射因此為恆定的，因此引起更少量測誤差源。
作為以上所描述之方法的改進形式，可應用視覺分析以精確地找到偵測器圖像中之目標影像。換言之，可使用偵測器信號之分析以精確地判定疊對目標30相對於感測器光學器件之光軸而存在於基板W上之何處，且此可自動地進行。此降低針對偵測器及對準光束相對於基板及其目標之極精確定位的需要。相對定位之誤差可藉此自動地自疊對計算而移除。或者，可使用此技術以產生警告信號，以指示目標相對於感測器之定位不足夠良好，且需要重新定位(包括關於重新定位步驟之方向及量值的資訊)。亦可自動化此重新定位。
圖6展示本發明之一實施例。以共同參考數字來標註共同特徵。基本裝備為相同的，其中接物鏡40準直經反射輻射，且輻射隨後藉由透鏡50而聚焦及重新準直。然而，在此實施例中，不存在用於阻隔第 零級輻射之空間濾光器(60)。然而，包括光學楔形體72之系統，其允許形成三個單獨目標影像102，如圖6之底部中所示。
在所示之特定實施例中，藉由偵測器CCD來偵測第零級及第一級。然而，偵測更高級經繞射射線同樣係在本發明之範疇內。光學楔形體72用以分離出第零繞射級，第零繞射級可接著自疊對之計算而移除。可以與第一實施例中相同的方式而自來自各別+1第一級及-1第一級(及/或更高級)經繞射射線之兩個目標影像來再次計算疊對。
圖7中展示本發明之一實施例。如同圖6之實施例的情況，以共同參考數字來描繪與第一實施例共同之特徵。在圖7之實施例中，使用空間濾光器60來再次阻隔第零級經繞射輻射，且以與圖5及圖6之實施例中相同的方式來進行經反射輻射之準直及聚焦。然而，不使用光學楔形體(70、72)。實情為，不將量測偵測器CCD置放於影像平面IP中，而置放於光瞳平面PP(60)與影像平面IP之間的中間平面中，其中輻射自其在光瞳平面處之平行光束會聚至在影像平面IP處之經聚焦點。或者，且同等有效地，可將偵測器CCD置放於影像平面IP之下游，其中輻射在已聚焦於影像平面IP上之後再次發散。任一方法均導致目標30之兩個空間分離的模糊影像104。
圖7所示之實施例不使用光學楔形體以形成雙視覺效應(100、102)，而更確切而言，使用透鏡82之第二集合以朝向處於光軸上之影像平面IP聚焦第一繞射級。模糊目標影像係因尚未將其一起會聚於軸線上(或已會聚於軸線上，但再次發散)之事實而分離，而非因包括光學楔形體以將焦點強制於除了光學系統或準直器之主要光軸以外的軸線上而分離。即使模糊影像不在焦點上，亦可量測模糊影像之強度。因此，此實施例之益處為：不需要光學楔形體之附加硬體，且可簡化且更便宜地製造光學系統或準直器。
然而，在此實施例中，可將光學楔形體用作一變化，且可將偵 測器置放於經分離第一級為可量測之任何處，而無論經分離第一級是否在焦點上。
再次在圖7之實施例或其變化中，自此等模糊目標104之平均強度差而計算疊對。
作為圖7之實施例的改進形式，可在中間影像平面(其共軛於物件平面；亦即，在與物件30所定位之平面相同的光軸上，且因此產生具有物件30之所有繞射級的影像，其為全資料影像)中使用第二空間濾光器62，以防止源自待包括於模糊目標影像中之實際疊對目標外部的射線。此有助於防止雜訊影響偵測器CCD處之強度量測。此外，此使量測光點能夠大於基板上之目標，從而使目標能夠更小。第一空間濾光器60亦可促成此益處。
熟習此項技術者應能夠在申請專利範圍之範疇內設想裝置之其他裝備，其將使偵測器或偵測器陣列能夠處於影像平面中或附近，且能夠使用彼此分離之第一(或更高)繞射級來獲得僅含有來自第一(及/或更高)繞射級之資料的單獨信號或影像。自此等單獨信號或影像之比較，可判定疊對量測。
熟習此項技術者亦應瞭解，可使用所描述之技術來量測基板之其他性質。舉例而言，可重新建構基板上之物件之量測參數，諸如，臨界尺寸(CD)、物件高度、物件相對於基板之側壁角度，等等；或可量測基板相對於外部常數之對準。
儘管在此本文中可特定地參考微影裝置在IC製造中之使用，但應理解，本文所描述之微影裝置可具有其他應用，諸如，製造積體光學系統、用於磁域記憶體之導引及偵測圖案、平板顯示器、液晶顯示器(LCD)、薄膜磁頭，等等。熟習此項技術者應瞭解，在該等替代應用之情境中，可認為本文對術語「晶圓」或「晶粒」之任何使用分別與更通用之術語「基板」或「目標部分」同義。可在曝光之前或之後 在(例如)軌道(通常將抗蝕劑層施加至基板且顯影經曝光抗蝕劑之工具)、度量衡工具及/或檢查工具中處理本文所提及之基板。適用時，可將本文之揭示應用於該等及其他基板製程工具。另外，可將基板處理一次以上，(例如)以便形成多層IC，使得本文所使用之術語基板亦可指代已經含有多個經處理層之基板。
儘管以上可特定地參考在光學微影術之情境中對本發明之實施例的使用，但應瞭解，本發明可用於其他應用(例如，壓印微影術)中，且在情境允許時不限於光學微影術。在壓印微影術中，圖案化器件中之構形界定形成於基板上之圖案。可將圖案化器件之構形壓入被供應至基板之抗蝕劑層中，在基板上，抗蝕劑藉由施加電磁輻射、熱、壓力或其組合而固化。在抗蝕劑固化之後，將圖案化器件移出抗蝕劑，從而在其中留下圖案。
本文所使用之術語「輻射」及「光束」涵蓋所有類型之電磁輻射，包括紫外線(UV)輻射(例如，具有為或為約365奈米、355奈米、248奈米、193奈米、157奈米或126奈米之波長)及遠紫外線(EUV)輻射(例如，具有在為約5奈米至20奈米之範圍內的波長)；以及粒子束(諸如，離子束或電子束)。
術語「透鏡」在情境允許時可指代各種類型之光學組件中之任一者或組合，包括折射、反射、磁性、電磁及靜電光學組件。
儘管以上已描述本發明之特定實施例，但應瞭解，可以與所描述之方式不同的其他方式來實踐本發明。舉例而言，本發明可採取如下形式：電腦程式，其含有描述如以上所揭示之方法之機器可讀指令的一或多個序列；或資料儲存媒體(例如，半導體記憶體、磁碟或光碟)，其具有儲存於其中之該電腦程式。
以上描述意欲為說明性而非限制性的。因此，對於熟習此項技術者而言將顯而易見的為，可在不脫離以下所闡明之申請專利範圍之 範疇的情況下對如所描述之本發明進行修改。
BK‧‧‧烘焙板
CH‧‧‧冷卻板
DE‧‧‧顯影器
I/O1‧‧‧輸入/輸出埠
I/O2‧‧‧輸入/輸出埠
LA‧‧‧微影裝置
LACU‧‧‧微影控制單元
LB‧‧‧裝載盤
LC‧‧‧微影單元
RO‧‧‧機器人
SC‧‧‧旋塗器
SCS‧‧‧監督控制系統
TCU‧‧‧軌道控制單元

Claims (20)

  1. 一種檢查(inspection)裝置，其包含：一輻射源，其經組態以朝向一基板的一表面輸出一輻射光束；一準直器(collimator)，其經組態以分離經反射輻射光束的一繞射光譜之繞射級(diffraction orders)；一光學器件，其經組態以空間地發散(spatially diverge)該繞射光譜的正及負第一繞射級；一偵測器，其定位於該準直器的一影像平面處，並經組態以偵測經空間地發散之該正及該負第一繞射級，並且判定該正及該負第一繞射級的第一及第二性質(properties)；及一處理器，其經組態以藉由比較該第一及第二性質而判定該基板的一性質。
  2. 如請求項1的檢查裝置，其中該基板的該表面包含一疊對目標(overlay target)，該輻射源經組態以朝向該疊對目標輸出該輻射光束。
  3. 如請求項2的檢查裝置，其中該處理器進一步經組態以：判定該疊對目標相對於該準直器的一光軸(optical axis)之一位置；及根據該疊對目標之經判定的該位置，自該基板的該性質之判定移除相對定位之一誤差(error)。
  4. 如請求項1的檢查裝置，其中：待量測之該基板之該性質係該基板上一第一層相對於一第二層的疊對；該第一性質包含一正第一繞射級，及該第二性質包含一負第 一繞射級；及該疊對係藉由比較該正及負第一繞射級之強度而量測。
  5. 如請求項1之檢查裝置，其中該偵測器經配置以實質上同時地偵測該繞射光譜的該正及負第一繞射級。
  6. 如請求項1之檢查裝置，其中該基板的該特性包含該基板的該表面上一疊對目標的一量測參數。
  7. 如請求項1之檢查裝置，其進一步包含一空間濾光器(spatial filter)，其位於該準直器的一中間(intermediate)影像平面中，該空間濾光器經組態以防止雜散(stray)輻射到達該偵測器，該雜散輻射源自該基板上一目標之外部，該輻射光束係自該目標反射。
  8. 如請求項1之檢查裝置，其中該偵測器經組態以實質上同時地針對該輻射光束之複數個波長及複數個入射角而偵測該經繞射光譜。
  9. 一種散射計(scatterometer)，其包含：一輻射源，其經組態以朝向一基板的一表面輸出一輻射光束；一準直器，其經組態以分離經反射輻射光束的一繞射光譜之繞射級；一光學器件，其經組態以空間地發散該繞射光譜的正及負第一繞射級；一偵測器，其定位於該準直器的一影像平面處，並經組態以偵測經空間地發散之該正及該負第一繞射級，並且判定該正及該負第一繞射級的第一及第二性質；及一處理器，其經組態以藉由比較該第一及第二性質而判定該基板的一性質。
  10. 如請求項9的散射計，其中該基板的該表面包含一疊對目標，該輻射源經組態以朝向該疊對目標輸出輻射光束。
  11. 如請求項10的散射計，其中該處理器進一步經組態以：判定該疊對目標相對於該準直器的一光軸之一位置；及根據該疊對目標之經判定的該位置，自該基板的該性質之判定移除相對定位之一誤差。
  12. 如請求項9的散射計，其中：待量測之該基板之該性質係該基板上一第一層相對於一第二層的疊對；該第一性質包含一正第一繞射級，及該第二性質包含一負第一繞射級；及該疊對係藉由比較該正及負第一繞射級之強度而量測。
  13. 如請求項9的散射計，其中該偵測器經配置以實質上同時地偵測該繞射光譜的該正及負第一繞射級。
  14. 如請求項9的散射計，其進一步包含一空間濾光器，其位於該準直器的一中間影像平面中，該空間濾光器經組態以防止雜散輻射到達該偵測器，該雜散輻射源自該基板上一目標之外部，該輻射光束係自該目標反射。
  15. 一種方法，其包含：以一輻射光束照射一基板的一表面，該輻射光束自該表面反射為一經反射輻射光束；利用一準直器以準直及聚焦該經反射輻射光束；利用一光學器件空間地發散該經反射輻射光束的一繞射光譜之正及負第一繞射級；偵測在該準直器的一影像平面處的該正及負第一繞射級之強度； 比較該正第一繞射級的強度與該負第一繞射級的強度；及根據該比較判定該基板的一性質。
  16. 如請求項15之方法，其進一步包含：判定該基板的該表面上一目標相對於該準直器的一光軸之一位置；及根據該目標的該位置之判定，自該基板的該性質之判定移除相對定位之一誤差。
  17. 如請求項15之方法，其中該偵測進一步包含：實質上同時地偵測該繞射光譜的該正及負第一繞射級。
  18. 如請求項15之方法，其進一步包含：藉由位於該準直器的一中間影像平面中的一空間濾光器防止雜散輻射到達該偵測器，該雜散輻射源自該基板上一目標之外部，該輻射光束係自該目標反射。
  19. 如請求項15之方法，其中該偵測進一步包含：實質上同時地針對該輻射光束之複數個波長及複數個入射角而偵測該經繞射光譜。
  20. 如請求項15之方法，其進一步包含：藉由位於該基板及該偵測器之間的一空間濾光器阻隔(blocking)該繞射光譜的一第零繞射級。
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