TW201418875A - 用於圖案化表面的方法 - Google Patents
用於圖案化表面的方法 Download PDFInfo
- Publication number
- TW201418875A TW201418875A TW102136512A TW102136512A TW201418875A TW 201418875 A TW201418875 A TW 201418875A TW 102136512 A TW102136512 A TW 102136512A TW 102136512 A TW102136512 A TW 102136512A TW 201418875 A TW201418875 A TW 201418875A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- paste
- stamp
- features
- indentation
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 92
- 238000000059 patterning Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims description 253
- 238000006243 chemical reaction Methods 0.000 claims description 64
- 238000007373 indentation Methods 0.000 claims description 48
- 238000005530 etching Methods 0.000 claims description 29
- 238000003825 pressing Methods 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 230000005660 hydrophilic surface Effects 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 239000004744 fabric Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 8
- 238000002508 contact lithography Methods 0.000 abstract description 6
- 230000035515 penetration Effects 0.000 description 43
- 230000000149 penetrating effect Effects 0.000 description 40
- 239000011521 glass Substances 0.000 description 32
- 239000000203 mixture Substances 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- -1 gums Substances 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 239000000463 material Substances 0.000 description 19
- 229920000642 polymer Polymers 0.000 description 19
- 239000002562 thickening agent Substances 0.000 description 17
- 229920001971 elastomer Polymers 0.000 description 16
- 239000000806 elastomer Substances 0.000 description 16
- 239000002904 solvent Substances 0.000 description 16
- 230000003993 interaction Effects 0.000 description 14
- 239000008367 deionised water Substances 0.000 description 13
- 229910021641 deionized water Inorganic materials 0.000 description 13
- 239000002245 particle Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 239000004094 surface-active agent Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 125000000524 functional group Chemical group 0.000 description 7
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000003999 initiator Substances 0.000 description 6
- 241000894007 species Species 0.000 description 6
- 239000003153 chemical reaction reagent Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000004132 cross linking Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000004205 dimethyl polysiloxane Substances 0.000 description 5
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 238000012876 topography Methods 0.000 description 5
- DPXJVFZANSGRMM-UHFFFAOYSA-N acetic acid;2,3,4,5,6-pentahydroxyhexanal;sodium Chemical compound [Na].CC(O)=O.OCC(O)C(O)C(O)C(O)C=O DPXJVFZANSGRMM-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000001768 carboxy methyl cellulose Substances 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 230000005670 electromagnetic radiation Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 235000019812 sodium carboxymethyl cellulose Nutrition 0.000 description 4
- 229920001027 sodium carboxymethylcellulose Polymers 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 239000002585 base Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 150000002500 ions Chemical group 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000002094 self assembled monolayer Substances 0.000 description 3
- 239000013545 self-assembled monolayer Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 229920013820 alkyl cellulose Polymers 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001212 derivatisation Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- ORTRWBYBJVGVQC-UHFFFAOYSA-N hexadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCS ORTRWBYBJVGVQC-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 238000000813 microcontact printing Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 238000001314 profilometry Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 2
- 239000010455 vermiculite Substances 0.000 description 2
- 229910052902 vermiculite Inorganic materials 0.000 description 2
- 235000019354 vermiculite Nutrition 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- JRLTTZUODKEYDH-UHFFFAOYSA-N 8-methylquinoline Chemical group C1=CN=C2C(C)=CC=CC2=C1 JRLTTZUODKEYDH-UHFFFAOYSA-N 0.000 description 1
- 229920001817 Agar Polymers 0.000 description 1
- 229920000936 Agarose Polymers 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- 235000012766 Cannabis sativa ssp. sativa var. sativa Nutrition 0.000 description 1
- 235000012765 Cannabis sativa ssp. sativa var. spontanea Nutrition 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- NNZYNGOLLPCTRF-UHFFFAOYSA-N OCCC=1C(=C(C=CC1)O)CCCCCCCC Chemical compound OCCC=1C(=C(C=CC1)O)CCCCCCCC NNZYNGOLLPCTRF-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000008272 agar Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001621 bismuth Chemical class 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 235000009120 camo Nutrition 0.000 description 1
- 125000004181 carboxyalkyl group Chemical class 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 235000005607 chanvre indien Nutrition 0.000 description 1
- 239000007805 chemical reaction reactant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004495 emulsifiable concentrate Substances 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical compound OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000011487 hemp Substances 0.000 description 1
- DOACSXJVHDTDSG-UHFFFAOYSA-N henicosan-11-one Chemical compound CCCCCCCCCCC(=O)CCCCCCCCCC DOACSXJVHDTDSG-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 description 1
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 description 1
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 description 1
- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical compound OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 229920003087 methylethyl cellulose Polymers 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- GWPLDXSQJODASE-UHFFFAOYSA-N oxotantalum Chemical compound [Ta]=O GWPLDXSQJODASE-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000546 pharmaceutical excipient Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000191 poly(N-vinyl pyrrolidone) Polymers 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920000747 poly(lactic acid) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004626 polylactic acid Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000000190 proton-induced X-ray emission spectroscopy Methods 0.000 description 1
- 230000005588 protonation Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000004621 scanning probe microscopy Methods 0.000 description 1
- 229930004725 sesquiterpene Natural products 0.000 description 1
- 150000004354 sesquiterpene derivatives Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- DTPQZKZONQKKSU-UHFFFAOYSA-N silver azanide silver Chemical compound [NH2-].[Ag].[Ag].[Ag+] DTPQZKZONQKKSU-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 238000002174 soft lithography Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000004670 tapping atomic force microscopy Methods 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F7/00—Signs, name or number plates, letters, numerals, or symbols; Panels or boards
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Chemically Coating (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US87280206P | 2006-12-05 | 2006-12-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201418875A true TW201418875A (zh) | 2014-05-16 |
Family
ID=39081811
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102136512A TW201418875A (zh) | 2006-12-05 | 2007-12-05 | 用於圖案化表面的方法 |
| TW096146280A TW200839432A (en) | 2006-12-05 | 2007-12-05 | Method for patterning a surface |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096146280A TW200839432A (en) | 2006-12-05 | 2007-12-05 | Method for patterning a surface |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080152835A1 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2095187A2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2010512028A (cg-RX-API-DMAC7.html) |
| KR (1) | KR20090107494A (cg-RX-API-DMAC7.html) |
| CN (1) | CN101755237B (cg-RX-API-DMAC7.html) |
| TW (2) | TW201418875A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2008070087A2 (cg-RX-API-DMAC7.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI668431B (zh) * | 2017-09-08 | 2019-08-11 | 鴻海精密工業股份有限公司 | 分子載體的製備方法 |
| US20230271445A1 (en) * | 2022-02-25 | 2023-08-31 | Intel Corporation | Reusable composite stencil for spray processes |
| US12083624B2 (en) * | 2019-08-07 | 2024-09-10 | Sumco Corporation | Method of printing laser mark and method of producing laser-marked silicon wafer |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1998602B1 (en) * | 2007-03-29 | 2014-03-05 | Alpha Metals, Inc. | Method of manufacturing electrical contacts |
| EP2220687A1 (en) * | 2007-11-19 | 2010-08-25 | Applied Materials, Inc. | Solar cell contact formation process using a patterned etchant material |
| TW200939509A (en) * | 2007-11-19 | 2009-09-16 | Applied Materials Inc | Crystalline solar cell metallization methods |
| CN101983131B (zh) * | 2008-02-06 | 2013-05-01 | 纳诺泰拉公司 | 形成表面特征的方法、形成弹性体蜡纸的方法及成套用具 |
| WO2009114229A1 (en) * | 2008-03-14 | 2009-09-17 | Research Triangle Institute | Selective planarization method and devices fabricated on planarized structures |
| JP5149083B2 (ja) * | 2008-06-16 | 2013-02-20 | 富士フイルム株式会社 | パターン形成方法、並びに基板加工方法、モールド構造体の複製方法、及びモールド構造体 |
| US20100163526A1 (en) * | 2008-06-27 | 2010-07-01 | Nano Terra Inc. | Patterning Processes Comprising Amplified Patterns |
| US8309446B2 (en) | 2008-07-16 | 2012-11-13 | Applied Materials, Inc. | Hybrid heterojunction solar cell fabrication using a doping layer mask |
| US8685272B2 (en) * | 2008-08-08 | 2014-04-01 | Samsung Electronics Co., Ltd. | Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device |
| US7951637B2 (en) * | 2008-08-27 | 2011-05-31 | Applied Materials, Inc. | Back contact solar cells using printed dielectric barrier |
| JP5363856B2 (ja) * | 2009-03-30 | 2013-12-11 | 富士フイルム株式会社 | パターン形成方法 |
| US20100252955A1 (en) * | 2009-04-01 | 2010-10-07 | Nano Terra Inc. | Methods of Patterning Substrates Using Microcontact Printed Polymer Resists and Articles Prepared Therefrom |
| TW201128301A (en) * | 2009-08-21 | 2011-08-16 | Nano Terra Inc | Methods for patterning substrates using heterogeneous stamps and stencils and methods of making the stamps and stencils |
| TW201220974A (en) * | 2010-05-21 | 2012-05-16 | Nano Terra Inc | Stencils for high-throughput micron-scale etching of substrates and processes of making and using the same |
| US20120070570A1 (en) * | 2010-09-16 | 2012-03-22 | Xerox Corporation | Conductive thick metal electrode forming method |
| CN104011882A (zh) | 2012-01-12 | 2014-08-27 | 应用材料公司 | 制造太阳能电池装置的方法 |
| JP2014082330A (ja) * | 2012-10-16 | 2014-05-08 | Hitachi Chemical Co Ltd | ＳｉＮ膜の除去方法 |
| JP6011234B2 (ja) * | 2012-10-16 | 2016-10-19 | 日立化成株式会社 | 組成物 |
| WO2014061245A1 (ja) * | 2012-10-16 | 2014-04-24 | 日立化成株式会社 | エッチング材 |
| JP6136186B2 (ja) * | 2012-10-16 | 2017-05-31 | 日立化成株式会社 | 液状組成物 |
| KR20140142005A (ko) * | 2013-06-03 | 2014-12-11 | 삼성디스플레이 주식회사 | 기판 상에 막을 코팅하는 방법 |
| US20160090488A1 (en) * | 2013-09-09 | 2016-03-31 | FunNano USA, Inc. | Mesh-like micro- and nanostructure for optically transparent conductive coatings and method for producing same |
| US20150118444A1 (en) * | 2013-10-31 | 2015-04-30 | General Electric Company | Methods of manufacturing silica-forming articles having engineered surfaces to enhance resistance to creep sliding under high-temperature loading |
| WO2015140775A1 (en) * | 2014-03-19 | 2015-09-24 | Utilight Ltd. | Printing high aspect ratio patterns |
| US9868902B2 (en) | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
| JP2016086187A (ja) * | 2016-02-01 | 2016-05-19 | 日立化成株式会社 | ＳｉＮ膜の除去方法 |
| JP2019527938A (ja) * | 2016-08-05 | 2019-10-03 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 導電性材料のインプリントリソグラフィの方法、インプリントリソグラフィのためのスタンプ、及びインプリントリソグラフィのための装置 |
| KR102081490B1 (ko) * | 2017-12-07 | 2020-02-25 | 인하대학교 산학협력단 | 비닐계 호모폴리머 이온성 젤의 녹는점을 이용한 스탬핑 전사방법 및 이에 의하여 전사된 비닐계 호모폴리머 이온성 젤 |
| CN110039890B (zh) * | 2019-04-18 | 2020-09-18 | 云南开放大学 | 印刷色泽更亮丽的印刷装置 |
| US11549022B2 (en) * | 2019-08-13 | 2023-01-10 | The Boeing Company | Conductive composites |
Family Cites Families (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2897066A (en) * | 1956-10-12 | 1959-07-28 | Hunt Capacitors Ltd A | Electrical capacitors |
| DE1696714B1 (de) * | 1968-03-13 | 1970-12-03 | Zeiss Carl Fa | Verfahren zur Herstellung eines Kennzeichens auf durchsichtigen Werkstoffen |
| US3647508A (en) * | 1968-08-27 | 1972-03-07 | King Seeley Thermos Co | Method of making patterned metal coatings by selective etching of metal |
| CH507590A (de) * | 1969-06-20 | 1971-05-15 | Siemens Ag | Verfahren zum Herstellen von kleinflächigen Halbleiterbauelementen |
| US4021279A (en) * | 1972-04-20 | 1977-05-03 | Stichting Reactor Centrum Nederland | Method of forming groove pattern |
| US5296043A (en) * | 1990-02-16 | 1994-03-22 | Canon Kabushiki Kaisha | Multi-cells integrated solar cell module and process for producing the same |
| JPH0580530A (ja) * | 1991-09-24 | 1993-04-02 | Hitachi Ltd | 薄膜パターン製造方法 |
| IT1272665B (it) * | 1993-09-23 | 1997-06-26 | Eurosolare Spa | Procedimento per la preparazione di moduli fotovoltaici a base di silicio cristallino |
| US5512131A (en) | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
| US5688366A (en) * | 1994-04-28 | 1997-11-18 | Canon Kabushiki Kaisha | Etching method, method of producing a semiconductor device, and etchant therefor |
| JP3057599B2 (ja) * | 1994-07-06 | 2000-06-26 | キヤノン株式会社 | 洗浄装置及び洗浄方法 |
| WO1997006013A1 (en) * | 1995-08-04 | 1997-02-20 | International Business Machines Corporation | Lithographic surface or thin layer modification |
| US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
| US5725788A (en) * | 1996-03-04 | 1998-03-10 | Motorola | Apparatus and method for patterning a surface |
| US6048623A (en) * | 1996-12-18 | 2000-04-11 | Kimberly-Clark Worldwide, Inc. | Method of contact printing on gold coated films |
| JPH11243224A (ja) * | 1997-12-26 | 1999-09-07 | Canon Inc | 光起電力素子モジュール及びその製造方法並びに非接触処理方法 |
| US6334960B1 (en) * | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
| US6047637A (en) * | 1999-06-17 | 2000-04-11 | Fujitsu Limited | Method of paste printing using stencil and masking layer |
| US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
| US6294398B1 (en) * | 1999-11-23 | 2001-09-25 | The Trustees Of Princeton University | Method for patterning devices |
| US6632730B1 (en) * | 1999-11-23 | 2003-10-14 | Ebara Solar, Inc. | Method for self-doping contacts to a semiconductor |
| KR100812891B1 (ko) * | 2000-04-28 | 2008-03-11 | 메르크 파텐트 게엠베하 | 무기물 표면용 에칭 페이스트 |
| JP2002086483A (ja) | 2000-09-14 | 2002-03-26 | Matsushita Electric Works Ltd | Ｆｒｐ成形品の製造方法 |
| DE10047556A1 (de) * | 2000-09-22 | 2002-04-11 | Univ Konstanz | Verfahren zur Herstellung einer Solarzelle und nach diesem Verfahren hergestellte Solarzelle |
| DE10104726A1 (de) * | 2001-02-02 | 2002-08-08 | Siemens Solar Gmbh | Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht |
| US20020130444A1 (en) * | 2001-03-15 | 2002-09-19 | Gareth Hougham | Post cure hardening of siloxane stamps for microcontact printing |
| WO2002085639A1 (en) * | 2001-04-25 | 2002-10-31 | The Trustees Of Columbia University In The City Of New York | Edge transfer lithography |
| US20030006527A1 (en) * | 2001-06-22 | 2003-01-09 | Rabolt John F. | Method of fabricating micron-and submicron-scale elastomeric templates for surface patterning |
| DE10138105A1 (de) * | 2001-08-03 | 2003-02-27 | Infineon Technologies Ag | Fotolack und Verfahren zum Strukturieren eines solchen Fotolacks |
| US20030071016A1 (en) | 2001-10-11 | 2003-04-17 | Wu-Sheng Shih | Patterned structure reproduction using nonsticking mold |
| ATE352838T1 (de) * | 2002-02-25 | 2007-02-15 | Koninkl Philips Electronics Nv | Temperaturregelung für eine laserdiode in einem plattenlaufwerk |
| EP1378947A1 (en) * | 2002-07-01 | 2004-01-07 | Interuniversitair Microelektronica Centrum Vzw | Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates |
| US6957608B1 (en) * | 2002-08-02 | 2005-10-25 | Kovio, Inc. | Contact print methods |
| DE10241300A1 (de) * | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Ätzpasten für Siliziumoberflächen und -schichten |
| CN1726433B (zh) * | 2002-11-12 | 2010-12-15 | 普林斯顿大学 | 用于纳米压印的组合物和方法 |
| US9040090B2 (en) * | 2003-12-19 | 2015-05-26 | The University Of North Carolina At Chapel Hill | Isolated and fixed micro and nano structures and methods thereof |
| US7354845B2 (en) * | 2004-08-24 | 2008-04-08 | Otb Group B.V. | In-line process for making thin film electronic devices |
| EP1594001B1 (en) * | 2004-05-07 | 2015-12-30 | Obducat AB | Device and method for imprint lithography |
| JP4889962B2 (ja) * | 2004-05-14 | 2012-03-07 | 昭和電工株式会社 | 導電性構造体およびその製造方法ならびに燃料電池用セパレータ |
| KR100667134B1 (ko) * | 2004-11-12 | 2007-01-12 | 엘지.필립스 엘시디 주식회사 | 평판표시소자의 제조방법 및 장치 |
| US8721952B2 (en) * | 2004-11-16 | 2014-05-13 | International Business Machines Corporation | Pneumatic method and apparatus for nano imprint lithography having a conforming mask |
| US7344955B2 (en) * | 2004-11-19 | 2008-03-18 | International Business Machines Corporation | Cut-and-paste imprint lithographic mold and method therefor |
| JP4758911B2 (ja) * | 2004-12-28 | 2011-08-31 | Ｒｉｍｔｅｃ株式会社 | 金型、インモールドコーティング方法及び被膜を持つ成形品 |
| CN100526053C (zh) | 2005-03-29 | 2009-08-12 | 东捷科技股份有限公司 | 纳米贴纸的制造方法 |
| TWI280159B (en) * | 2005-03-29 | 2007-05-01 | Li Bing Huan | Method for fabricating nano-adhesive |
| US7442029B2 (en) * | 2005-05-16 | 2008-10-28 | Asml Netherlands B.V. | Imprint lithography |
| KR101366505B1 (ko) * | 2005-06-10 | 2014-02-24 | 오브듀캇 아베 | 고리형 올레핀 공중합체를 포함하는 임프린트 스탬프 |
| DE602005010839D1 (de) | 2005-06-10 | 2008-12-18 | Obducat Ab | Verfahren zum Kopieren eines Modells |
| EP1959299B1 (en) * | 2005-06-10 | 2012-12-26 | Obducat AB | Pattern replication with intermediate stamp |
| TW200705541A (en) * | 2005-07-25 | 2007-02-01 | Li Bing Huan | Manufacturing method of nano-sticker |
| CN1800984A (zh) * | 2005-12-27 | 2006-07-12 | 国家纳米技术产业化基地 | 一种负型纳米压印方法 |
| US8608972B2 (en) * | 2006-12-05 | 2013-12-17 | Nano Terra Inc. | Method for patterning a surface |
-
2007
- 2007-12-05 US US11/950,703 patent/US20080152835A1/en not_active Abandoned
- 2007-12-05 WO PCT/US2007/024854 patent/WO2008070087A2/en not_active Ceased
- 2007-12-05 TW TW102136512A patent/TW201418875A/zh unknown
- 2007-12-05 TW TW096146280A patent/TW200839432A/zh unknown
- 2007-12-05 CN CN200780050792.1A patent/CN101755237B/zh not_active Expired - Fee Related
- 2007-12-05 JP JP2009540265A patent/JP2010512028A/ja active Pending
- 2007-12-05 KR KR1020097013916A patent/KR20090107494A/ko not_active Ceased
- 2007-12-05 EP EP07853240A patent/EP2095187A2/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI668431B (zh) * | 2017-09-08 | 2019-08-11 | 鴻海精密工業股份有限公司 | 分子載體的製備方法 |
| US12083624B2 (en) * | 2019-08-07 | 2024-09-10 | Sumco Corporation | Method of printing laser mark and method of producing laser-marked silicon wafer |
| US20230271445A1 (en) * | 2022-02-25 | 2023-08-31 | Intel Corporation | Reusable composite stencil for spray processes |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010512028A (ja) | 2010-04-15 |
| KR20090107494A (ko) | 2009-10-13 |
| WO2008070087A3 (en) | 2009-04-30 |
| CN101755237B (zh) | 2014-04-09 |
| WO2008070087A2 (en) | 2008-06-12 |
| US20080152835A1 (en) | 2008-06-26 |
| CN101755237A (zh) | 2010-06-23 |
| TW200839432A (en) | 2008-10-01 |
| EP2095187A2 (en) | 2009-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201418875A (zh) | 用於圖案化表面的方法 | |
| US8608972B2 (en) | Method for patterning a surface | |
| CN101983131B (zh) | 形成表面特征的方法、形成弹性体蜡纸的方法及成套用具 | |
| US20050084804A1 (en) | Low surface energy templates | |
| US20030080471A1 (en) | Lithographic method for molding pattern with nanoscale features | |
| US20110076448A1 (en) | Methods for Patterning Substrates Using Heterogeneous Stamps and Stencils and Methods of Making the Stamps and Stencils | |
| US20090025595A1 (en) | Contact Printing Method Using an Elastomeric Stamp Having a Variable Surface Area and Variable Shape | |
| CN101320209A (zh) | 一种表面导电聚合物图案的制备方法 | |
| US20130260560A1 (en) | Patterning Processes Comprising Amplified Patterns | |
| WO2010115027A1 (en) | Methods of patterning substrates using microcontact printed polymer resists and articles prepared therefrom | |
| Bao et al. | Polymer inking as a micro-and nanopatterning technique | |
| CN1693182A (zh) | 深亚微米三维滚压模具及其制作方法 | |
| Wu et al. | Microstructured SiO x/COP Stamps for Patterning TiO2 on Polymer Substrates via Microcontact Printing | |
| JP5147307B2 (ja) | 質量分析用基板及び質量分析用基板の製造方法 | |
| US8999186B2 (en) | Selectively etching of a polymer matrix on pet | |
| Jo et al. | Tip‐based Lithography with a Sacrificial Layer | |
| Rasappa | Block copolymer self-assembly based device structures | |
| Liu | An intermediate-layer lithography method for producing metal micron/nano patterns and conducting polymer-based microdevices | |
| HK1190796A (en) | Selectively etching of a polymer matrix on pet | |
| CN119061377A (zh) | 在具有纳米结构的模具上制作抗沾黏膜的方法 | |
| Cummins | Insertion of metal oxides into block copolymer nanopatterns as robust | |
| TW201307453A (zh) | 選擇性蝕刻聚對苯二甲酸乙二酯（ｐｅｔ）上之聚合物基質之方法 | |
| Chen et al. | Micro and nanolithography for photonic meta-materials and photonic nanostructures |