TW201319140A - 可固化助熔劑組成物及焊接方法 - Google Patents

可固化助熔劑組成物及焊接方法 Download PDF

Info

Publication number
TW201319140A
TW201319140A TW101135055A TW101135055A TW201319140A TW 201319140 A TW201319140 A TW 201319140A TW 101135055 A TW101135055 A TW 101135055A TW 101135055 A TW101135055 A TW 101135055A TW 201319140 A TW201319140 A TW 201319140A
Authority
TW
Taiwan
Prior art keywords
acid
group
flux composition
curable flux
hydrogen
Prior art date
Application number
TW101135055A
Other languages
English (en)
Other versions
TWI473850B (zh
Inventor
麥可Ｋ 嘉拉夫
何金生
亞文Ｖ 帝何伯
馬克Ｒ 溫寇
劉向前
大衛Ｄ 弗萊明
Original Assignee
羅門哈斯電子材料有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 羅門哈斯電子材料有限公司 filed Critical 羅門哈斯電子材料有限公司
Publication of TW201319140A publication Critical patent/TW201319140A/zh
Application granted granted Critical
Publication of TWI473850B publication Critical patent/TWI473850B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/362—Selection of compositions of fluxes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B23K1/203—Fluxing, i.e. applying flux onto surfaces
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/33—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of rings other than six-membered aromatic rings
    • C07C211/34—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of rings other than six-membered aromatic rings of a saturated carbon skeleton
    • C07C211/36—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of rings other than six-membered aromatic rings of a saturated carbon skeleton containing at least two amino groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/17—Amines; Quaternary ammonium compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3489—Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/11334—Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
    • H01L2224/2732—Screen printing, i.e. using a stencil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
    • H01L2224/27418—Spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
    • H01L2224/27422—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form by dipping, e.g. in a solder bath
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009—Pre-treatment of the bump connector or the bonding area
    • H01L2224/8101—Cleaning the bump connector, e.g. oxide removal step, desmearing
    • H01L2224/81011—Chemical cleaning, e.g. etching, flux
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009—Pre-treatment of the bump connector or the bonding area
    • H01L2224/81024—Applying flux to the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H01L2224/81143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9211—Parallel connecting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10674—Flip chip
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954—Other details of electrical connections
    • H05K2201/10977—Encapsulated connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

提供一種可固化助熔劑組成物，包括下列初始成分：每分子具有至少兩個環氧乙烷基之樹脂成分；羧酸；式(I)所示之助熔劑：□其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-80烷基、未經取代之C1-80烷基、經取代之C7-80芳基烷基和未經取代之C7-80芳基烷基；且其中，R1、R2、R3和R4中的0至3者係為氫；以及，視需要之固化劑。此外，亦提供一種使用可固化助熔劑組成物焊接電氣接點的方法。

Description

可固化助熔劑組成物及焊接方法
本發明係有關於一種可固化助熔劑組成物，包括下列初始成分：每分子具有至少兩個環氧乙烷基之樹脂成分；羧酸；式I所示之助熔劑，其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-80烷基、未經取代之C1-80烷基、經取代之C7-80芳基烷基和未經取代之C7-80芳基烷基；其中R1、R2、R3和R4中的0至3者係為氫；以及，視需要之固化劑。本發明復有關於一種使用該可固化助熔劑組成物焊接電氣接點的方法。
助熔劑為製造電氣裝置之重要工具，包含安裝電子組件(例如，半導體晶片)至基板(例如，印刷電路板，印刷線路板，有機基板，矽中介片，其他半導體晶片)。
覆晶方法是一種日趨重要之安裝電子組件至基板的方法。在將覆晶方法用於安裝半導體晶片至基板的一個例子中，係在位於半導體晶片上之接點(例如，接觸墊、接觸針)提供焊料(例如，如焊料球)。或者，係在位於基板上之相應接點(例如，接觸墊、鍍銅之通孔)提供焊料。係將助熔劑施加至焊料以移除可能出現於焊料表面或半導體晶片或基板上之接點表面之氧化層。助熔劑亦於回焊期間用以提供藉由焊料增進接點之濕潤性。之後半導體晶片 上之焊料或接點係與基板上之相應接點或焊料產生物理性接觸。之後加熱於半導體晶片上和/或基板上之焊料至回焊。冷卻後，形成半導體晶片與基板間的互連(inter connection)。典型地，此互連將隨後被封裝(例如，使用環氧樹脂)以強化半導體晶片/基板之組合件可靠度。也就是說，該封裝樹脂幫助釋放可能由半導體晶片與基板間熱膨脹係數不同所產生之應變。
上述製程中所用助熔劑實際上的選擇相當重要。在常見的多種助熔劑之使用上將產生可能減低產品裝置可靠度之非所欲離子殘留物。因此，該等非所欲離子殘留物必須自裝置清洗掉。然而，該等裝置的清洗卻受阻於下述事實：於經焊接之互連形成後，半導體晶片與基板(例如，印刷電路板)間之距離非常小。這在相當大的程度上使用以移除任何於焊接製程期間產生之非所欲離子殘留物的製程變得複雜。
往常上，可固化有機材料(典型含有有機或無機填料)係被用於填充半導體晶片與基板間之間隙和強化電氣互連半導體晶片與基板之焊接接合(solder joint)。這些底填充劑材料有賴於毛細作用以填入間隙中。
半導體晶片與基板間之間隙必須完全填充，以提供產品電氣組件之最大可靠度。然而，當可固化有機材料施加至半導體晶片與基板間之間隙的外周時，於間隙中央區域可能仍留有孔隙。隨著電氣組件尺寸縮減(亦即，間隙高度變得較小)，毛細作用的界限制效應造成非填滿中央區域的擴大。
為了解決這個問題，有些人於相當接近間隙區域中央之基板處提供孔洞。之後底填充劑材料經由此孔洞補充至間隙與至外 周。然而，此項嘗試要求裝置設計提供無線路區域以輔助中央孔洞位置。
另一種解決底填充劑問題的嘗試來自稱為「無流動」製程，其中，底填充劑材料係於焊接前預施加至半導體晶片及/或基板上。此材料隨後於焊接以形成互連組件時佔據半導體晶片與基板間之間隙並固化(典型地藉由加熱實施)。
在該等無流動製程中，利用提供助熔與封裝兩功能之底填充劑材料係為已知。該等材料減少了封裝半導體晶片於基板上所需之步驟數目。也就是說，這些材料將助熔與底填充步驟合而為一而且消除了清洗步驟的需求。
Pennisi等人已於美國專利案5,128,746號中揭露一種該類無流動底填充劑材料。Pennisi等人揭露一種用於回焊焊接電氣組件與基板之具有助熔劑的可熱固化黏著劑，其包括能自電氣組件或基板上去除氧化物塗層且於加熱至焊接溫度時至少部分固化之黏著劑，該黏著劑基本上由熱固性樹脂，含量足夠自該組件或該基板移除該氧化物塗層的助熔劑，以及於可熱固化黏著劑加熱時會與熱固性樹脂作用並將之固化之固化劑所組成。
陳等人於美國專利案7,303,944號中揭露另一種無流動底填充嘗試。陳等人揭露一種包括下述步驟之方法：在置於基板表面上之接觸墊上施加含有松脂化合物之酐加成物作為助熔劑之底填充劑材料；相對於基板，以複數個焊料凸塊係置於無流動底填充劑材料內之方式放置微電子裝置(該微電子裝置具有主動表面，以及置於複數個接觸墊上之複數個焊料凸塊，該複數個接觸墊於主動表面上)；以助熔劑自焊料凸塊移除金屬氧化物；藉由加熱溫度 至大於焊料熔點溫度使焊料凸塊回焊；以及固化底填充劑材料。
許多常見的無流動底填充劑材料(如該等註明者)係建立於環氧基化學且有賴於羧酸與酸酐提供助熔效果。此外，有機醇也偶爾作為促進劑，此係鑒於其與酸酐反應形成羧酸助熔劑。然而，羧酸於焊接與封裝製程期間往往會揮發。此係非所欲者，因為此現象可能在半導體晶片與基板間的間隙產生孔隙而減低產品裝置的可靠性。因此，仍有對於促進製造電氣組件中之可靠的經焊接與封裝之互連(例如，於半導體晶片與印刷電路板間的互連)的無流動底填充劑材料的需求。
本發明提供一種可固化助熔劑組成物，包括下列初始成分：每分子具有至少兩個環氧乙烷基之樹脂成分；羧酸；式(I)所示之助熔劑： 其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-80烷基、未經取代之C1-80烷基、經取代之C7-80芳基烷基和未經取代之C7-80芳基烷基；且其中，R1、R2、R3和R4中的0至3者係為氫；以及，視需要之固化劑。
本發明提供一種形成經封裝之冶金接合的方法，包括：提供本發明之可固化助熔劑組成物；提供複數個第一電氣接點；提供 複數個相應的第二電氣接點；提供焊料；將該可固化助熔劑組成物施加至該複數個第一電氣接點和該複數個相應的第二電氣接點中的至少一者；將該複數個第一電氣接點臨近該複數個相應的第二電氣接點放置；加熱該焊料超過其回焊溫度，以形成熔融焊料並使該熔融焊料暴露該複數個第一電氣接點和該複數個相應的第二電氣接點；以該熔融焊料自該複數個第一電氣接點和該複數個相應的第二電氣接點置換該可固化助熔劑組成物，並於該複數個第一電氣接點和該複數個相應的第二電氣接點間形成複數個電氣互連；以及，固化該熱固性樹脂成分，封裝該複數個電氣互連。
本發明之可固化助熔劑組成物係設計成促進製造具有經焊接和封裝之電氣互連之電氣組件。舉例來說，本發明之可固化助熔劑組成物係較佳經設計以作為用於半導體裝置製造之無流動底填充劑配方。
在本文與隨附的申請專利範圍中所用之術語「無流動底填充劑組成物」意指可固化助熔劑組成物具有焊料助熔活性與潛在固化以促進已焊接之互連的封裝。
在本文與隨附的申請專利範圍中關於本發明之可固化助熔劑組成物(在單包裝系統中)所用之術語「儲存安定性」意指於55℃儲存一週後可固化助熔劑組成物之黏度增加少於5%，其中，該黏度係由Brookfield DV-I+黏度計於20℃使用設定於100 rpm之Brookfield #S00轉軸測定。
在本文與隨附的申請專利範圍中關於本發明之可固化助熔劑組成物所用之術語「儲存安定」意指可固化助熔劑組成物具有儲存安定性。
本發明之可固化助熔劑組成物包括(基本上組成為)下列初始成分：每分子含有至少兩個環氧乙烷基之樹脂成分；羧酸；式(I)所示之助熔劑；以及，視需要之固化劑。較佳者，該可固化助熔劑組成物含有少於10 wt%之加熱至250℃時會揮發之材料，此係以熱重分析(thermogravimetric analysis，TGA)自25℃起使用升溫速率10℃/分鐘測定。發生來自底填充劑組成物之氣體往往造成半導體晶圓與基板間之間隙有孔隙，而導致關於產品封裝裝置之潛在可靠性問題。
本發明可固化助熔劑組成物所用之樹脂成分，包括每分子含有至少兩個環氧乙烷基之材料。較佳者，所使用樹脂成分係每分子含有至少兩個環氧基之環氧樹脂，舉例來說，經取代或未經取代之脂肪族、環脂肪族、芳香族和雜環之聚環氧化物。更佳者為該樹脂成分係選自下列之環氧樹脂：雙酚型環氧樹脂(例如，雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂)，芳香族二縮水甘油醚類；芳香族多官能基縮水甘油醚類；脂肪族二縮水甘油醚類和脂肪族多官能基縮水甘油醚類。再更佳者該樹脂成分係為雙酚型環氧樹脂。最佳者該樹脂成分係為雙酚A型環氧樹脂。該可固化助熔劑組成較佳包括10至99 wt%(更佳者20至90 wt%，再更佳者30至75 wt%，最佳者30至50 wt%)樹脂成分。
本發明可固化助熔劑組成物所用之樹脂成分，視需要復包含每單位分子具有至少三個環氧乙烷基之材料。每單位分子具有至 少三個環氧乙烷基之材料係視需要包含於樹脂成分中以增加已固化樹脂產物之玻璃轉化溫度和減少配方之膠化時間。
較佳者，本發明之助熔劑組成物所用之羧酸係選自C8-20脂肪族單羧酸、C2-20脂肪族二羧酸、C6-20芳香族羧酸及其混合物。更佳的，用於本發明之助熔劑組成物中之羧酸係選自辛酸、壬酸、十一酸、十二酸、十三酸、十四酸、十五酸、十六酸、十七酸、硬脂酸、羥基硬脂酸、油酸，亞麻油酸、α-次亞麻油酸、二十酸、草酸、丙二酸、琥珀酸、蘋果酸、戊二酸、己二酸、庚二酸、辛二酸、苯甲酸、酞酸、異酞酸、對酞酸、1,2,3-苯三甲酸、偏苯三甲酸、1,3,5-苯三甲酸、1,2,3,5-苯四甲酸、1,2,3,4-苯四甲酸、1,2,4,5-苯四甲酸、苯六甲酸、甲基苯甲酸、茬甲酸、2,3-二甲基苯甲酸、均三甲基苯甲酸、1,2,3,4-苯四甲酸、肉桂酸、水楊酸、苯甲酸(例如：苯甲酸、2,3-二羥基苯甲酸、2,4-二羥基苯甲酸、2,5-二羥基苯甲酸(龍膽酸)、2,6-二羥基苯甲酸、3,5-二羥基苯甲酸、3,4,5-三羥基苯甲酸(沒食子酸))、萘甲酸(例如：萘甲酸、1,4-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸、3,7-二羥基-2-萘甲酸)、酸式酚酞、雙酚酸及其混合物。再更佳者，本發明之助熔劑組成物所用之羧酸係選自萘甲酸(例如：萘甲酸、1,4-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸、3,7-二羥基-2-萘甲酸)、硬脂酸、羥基硬脂酸、油酸、亞麻油酸、α-次亞麻油酸、二十酸及其混合物。尚更佳者，本發明之助熔劑組成物所用之羧酸係選自萘甲酸(例如：萘甲酸、1,4-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸、3,7-二羥基-2-萘甲酸)、硬脂酸、羥基硬脂酸、油酸及其混合物。最佳者，本發明之助熔劑組成物所用之羧酸係選自萘甲酸、C18羧酸及其混合物，其中該 萘甲酸係選自1,4-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸，且該C18羧酸係選自硬脂酸、羥基硬脂酸及油酸。
本發明可固化助熔劑組成物之助熔劑係依據式(I)所示，其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-80烷基、未經取代之C1-80烷基、經取代之C7-80芳基烷基和未經取代之C7-80芳基烷基(較佳者，其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-20烷基、未經取代之C1-20烷基、經取代之C7-30芳基烷基和未經取代之C7-30芳基烷基)；其中，R1、R2、R3和R4中的0至3者係為氫。較佳者，R1、R2、R3和R4中的1至3者係為氫。更佳者，R1、R2、R3和R4中的2至3者係為氫。再更佳者，R1、R2、R3和R4中的2者係為氫。最佳者，R1及R2中的1者係為氫且R3和R4中的1者係為氫。該依據式(I)所示之助熔劑之R1、R2、R3和R4基團較佳係選擇為：提供助熔劑於給定應用上之所欲流變性質，以加速該助熔錯合物與該羧酸的形成；視需要地，使助熔劑與用於遞送至待焊表面之給定溶劑套組相容；以及，視需要地，使助熔劑與用於焊接後用以形成經封裝焊接接合(例如，用於常見之覆晶底填充應用)之給定封裝組成物(例如，環氧樹脂)相容。此外，依據式(I)之助熔劑之R1、R2、R3和R4基團係較佳經選擇以使該助熔劑具有由示差掃描熱量測定法測定於自25℃起升溫速度為10℃/分鐘加溫之沸點溫度為250℃(更佳者300℃，最佳者325℃)。
較佳者，本發明可固化助熔劑組成物所用之助熔劑係依據式(I)；其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-80烷基、未經取代之C1-80烷基、經取代之C7-80芳基烷基和未經取代之C7-80芳基烷基；其中，該經取代之C1-80烷基與該經取代之C7-80芳基烷 基之取代基係選自-OH基、-OR5基、-COR5-基、-COR5基、-C(O)R5基、-CHO基、-COOR5基、-OC(O)OR5基、-S(O)(O)R5基、-S(O)R5基、-S(O)(O)NR5 2基、-OC(O)NR6 2基、-C(O)NR6 2基、-CN基、-N(R6)-基和-NO2基中至少一者(較佳者係為-OH基、-OR5基、-COR5-基、-COR5基、-C(O)R5基、-CHO基、-COOR5基、-OC(O)OR5基、-S(O)(O)R5基、-S(O)R5基、-S(O)(O)NR5 2基、-OC(O)NR6 2基、-C(O)NR6 2基、-CN基和-NO2基中至少一者)；其中，R5係選自C1-28烷基、C3-28環烷基、C6-15芳基、C7-28芳基烷基和C7-28烷基芳基；其中，R6係選自氫、C1-28烷基、C3-28環烷基、C6-15芳基、C7-28芳基烷基和C7-28烷基芳基；以及，其中R1、R2、R3和R4中的0至3者係為氫。該經取代之C1-80烷基與該經取代之C7-80芳基烷基可含有該取代基之組合。舉例來說，該經取代之C1-80烷基與該經取代之C7-80芳基烷基可：含有多於一個相同類型取代基(例如，兩個-OH基)；含有多於一種類型取代基(例如，一個-OH基與一個-COR5-基)；含有多於一種類型取代基與多於一個相同類型取代基(例如，兩個-OH基與兩個-COR5-基)。較佳者，R1、R2、R3和R4中的1至3者係為氫。更佳者，R1、R2、R3和R4中的2至3者係為氫。再更佳者，R1、R2、R3和R4中的2者係為氫。最佳者，R1及R2中的1者係為氫且R3和R4中的1者係為氫。
再更佳者，本發明之可固化助熔劑組成物所用之助熔劑係依據式(I)；其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-20烷基、未經取代之C1-20烷基、經取代之C7-30芳基烷基和未經取代之C7-30芳基烷基；其中，於經取代之C1-20烷基和經取代之C7-30芳基烷基中之取代基係選自-OH基、-OR7基、-COR7-基、-COR7基、 -C(O)R7基、-CHO基、-COOR7基、-OC(O)OR7基、-S(O)(O)R7基、-S(O)R7基、-S(O)(O)NR7 2基、-OC(O)NR8 2基、-C(O)NR8 2基、-CN基、-N(R8)-基和-NO2基中至少一者(較佳者為-OH基、-OR7基、-COR7-基、-COR7基、-C(O)R7基、-CHO基、-COOR7基、-OC(O)OR7基、-S(O)(O)R7基、-S(O)R7基、-S(O)(O)NR7 2基、-OC(O)NR8 2基、-C(O)NR8 2基、-CN基和-NO2基中至少一者)；其中，R7係選自C1-19烷基、C3-19環烷基、C6-15芳基、C7-19芳基烷基和C7-19烷基芳基；其中，R8係選自氫、C1-19烷基、C3-19環烷基、C6-15芳基、C7-19芳基烷基和C7-19烷基芳基；且其中，R1、R2、R3和R4中的0至3者係為氫。該經取代之C1-20烷基和經取代之C7-30芳基烷基可含有取代基之組合。例如，經取代之C1-20烷基和經取代之C7-30芳基烷基可：含有多於一個相同類型取代基(例如，兩個-OH基)；含有多於一種類型取代基(例如，一個-OH基與一個-COR7-基)；含有多於一種類型取代基與多於一個相同類型取代基(例如，兩個-OH基與兩個-COR7-基)。較佳者，R1、R2、R3和R4中的1至3者係為氫。更佳者，R1、R2、R3和R4中的2至3者係為氫。再更佳者，R1、R2、R3和R4中的2者係為氫。最佳者，R1及R2中的1者係為氫且R3和R4中的1者係為氫。
尚更佳者，本發明之助熔劑組成物所用之助熔劑係依據式(I)；其中，R1、R2、R3和R4係獨立選自氫、-CH2CH(OH)R9和-CH2CH(OH)CH2-O-R9基；其中，R9係選自氫、C1-28烷基、C3-28環烷基、C6-16芳基、C7-28芳基烷基和C7-28烷基芳基(較佳者，其中R9係選自C5-10烷基、C6-16芳基和C7-16烷基芳基；較佳者，其中R9係選自C8烷基、C7烷基芳基、萘基、聯苯基和經取代之C12-16聯苯基； 最佳者，其中R9係選自C8烷基、C7烷基芳基和萘基)；及其中，R1、R2、R3和R4中的0至3者係為氫。較佳者，R1、R2、R3和R4中的1至3者係為氫。更佳者，R1、R2、R3和R4中的2至3者係為氫。再更佳者，R1、R2、R3和R4中的2者係為氫。最佳者，R1及R2中的1者係為氫且R3和R4中的1者係為氫。
尚更佳者，本發明之可固化助熔劑組成物所用之助熔劑係依據式(I)；其中，R1及R3係為氫；其中，R2及R4係為-CH2CH(OH)CH2-O-R9基；其中，R9係選自C8烷基、C7烷基芳基和C10萘基。
較佳者，本發明之可固化助熔劑組成物，包括下列初始成分：助熔劑之胺氮對羧酸之酸(-COOH)含量的當量比為1：1至20：1(較佳者，1：1至10：1；最佳者，1：1至4：1)之羧酸及依據式(I)所示之助熔劑。較佳者，當組合時，該羧酸及該依據式(I)所示之助熔劑形成助熔錯合物。較佳者，所形成之助熔錯合物係酸-鹼錯合物。較佳者，該助熔錯合物顯示經熱重分析(TGA)測定於自25℃起升溫速度為10℃/分鐘加溫至230℃時質量損失百分比25 wt%者(更佳者，20 wt%；最佳者，15 wt%)。
視需要地，本發明之助熔劑組成物所用之助熔劑係為具有選自式(IIa)、(IIb)及(IIc)之式的二聚體；其中該二聚體含有根據式(I)的第一單體以及根據式(I)的第二單體；其中第一單體中R1、R2、R3和R4中之一者與第二單體中R1、R2、R3和R4中之一者重合接合第一單體與第二單體。
以及，
一種依據式(IIa)之二聚體之實例係為1-(2-乙基己基氧基)-3-(4-(2-(3-(4-(2-(4-(3-(4-(2-(3-(庚烷-3-基氧基)-2-羥基丙基胺基)丙烷-2-基)-1-甲基環己基胺基)-2-羥基丙氧基)苯基)丙烷-2-基)苯氧基)-2-羥基丙基胺基)丙烷-2-基)-1-甲基環己基胺基)丙烷-2-醇，如下所示：
本發明所述之可固化助熔劑組成物，視需要的，復包括固化劑。常見之固化劑可與樹脂成分與助熔劑一起使用，限制條件為該固化劑可固化樹脂成分。常見之固化劑包含，舉例來說，多官能基酚類、多官能基醇類、胺類、咪唑化合物、酸酐類、有機磷化合物和其鹵化物。較佳者，任何使用之固化劑應為潛在固化劑(亦即，於溫度225℃時不會作用而引發樹脂成分膠化的固化劑)允許焊料回焊時無干擾且促進單包裝系統之可固化助熔劑組成物之儲存安定性。
本發明之可固化助熔劑組成物視需要復包括溶劑。溶劑係視需要地包含在本發明之可固化助熔劑組成物中以促進將樹脂成分及助熔劑遞送至一個或多個待焊接表面。較佳者，該可固化助熔劑組成物含有1至70 wt%溶劑(較佳係1至35 wt%溶劑；最佳係1至20 wt%溶劑)。本發明之可固化助熔劑組成物中所用之溶劑係較 佳地選自下列有機溶劑：烴類(例如，十二烷、十四烷)；芳香烴類(例如，苯、甲苯、二甲苯、三甲基苯、苯甲酸丁酯、十二基苯)；酮類(例如，甲基乙基酮、甲基異丁基酮、環己酮)；醚類(例如，四氫呋喃、1,4-二烷與四氫呋喃、1,3-二氧雜環戊烷、二丙二醇二甲醚)；醇類(例如，2-甲氧基-乙醇、2-丁氧基乙醇、甲醇、乙醇、異丙醇、α-萜品醇、苯甲醇、2-己基癸醇)；酯類(例如，乙酸乙酯、乳酸乙酯、乙酸丁酯、己二酸二乙酯、酞酸二乙酯、二乙二醇單丁基乙酸酯、丙二醇單甲醚乙酸酯、乳酸乙酯、2-羥基異丁酸甲酯、丙二醇單甲醚乙酸酯)；以及，醯胺類(例如，N-甲基吡咯啶酮、N,N-二甲基甲醯胺和N,N-二甲基乙醯胺)；二醇衍生物(例如，賽路蘇、丁基賽路蘇)；二醇類(例如，乙二醇；二乙二醇；二丙二醇；三乙二醇；己二醇；1,5-戊二醇)；二醇醚類(例如，丙二醇單甲醚、甲基卡必醇、丁基卡必醇)；和石油醚溶劑(例如，石油醚、石油腦)。更佳者，本發明之可固化助熔劑組成物中所用之溶劑係選自下列之有機溶劑：甲基乙基酮；2-丙醇；丙二醇單甲醚；丙二醇單甲醚乙酸酯；乳酸乙酯和2-羥基異丁酸甲酯。最佳者，本發明之可固化助熔劑組成物中所用之溶劑係為丙二醇單甲醚。
本發明中之可固化助熔劑組成物視需要復包括增稠劑。較佳者，該可固化助熔劑組成物含有0至30 wt%增稠劑。本發明之可固化助熔劑組成物中所用之增稠劑可選自非固化性樹脂材料(即，每分子含有<2之反應性官能基)，像是例如，非固化性酚醛樹脂。用於可固化助熔劑組成物之增稠劑較佳表現出高於樹脂成分(於其非固化形態)所表現之黏性。當存在增稠劑時，該增稠劑 含量可為基於可固化助熔劑組成物總重量之0.1至35 wt%。
本發明中之可固化助熔劑組成物視需要復包括搖變減黏性試劑。較佳者，該可固化助熔劑組成物含有1至30 wt%搖變減黏性試劑。本發明之可固化助熔劑組成物中所用之搖變減黏性試劑可選自脂肪酸醯胺(例如，硬脂醯胺、羥基硬脂酸二醯胺)；脂肪酸脂(例如，蓖麻蠟、蜂蠟、巴西棕櫚蠟)；有機搖變減黏性試劑(例如，聚乙二醇、聚環氧乙烷、甲基纖維素、乙基纖維素、羥乙基纖維素、羥丙基纖維素、二甘油單油酸酯、二甘油月桂酸酯、十甘油油酸酯、二甘油單月桂酸酯，山梨醇月桂酸脂)；無機搖變減黏性試劑(例如，矽石粉末、高嶺土粉末)。較佳者，所用之搖變減黏性試劑係選自聚乙二醇和脂肪酸醯胺。
本發明之可固化助熔劑組成物視需要復包括無機填料。無機填料可選自氧化鋁、氫氧化鋁、矽酸鋁、堇青石、矽酸鋰鋁、鋁酸鎂、氫氧化鎂、黏土、滑石、三氧化二銻、五氧化二銻、氧化鋅、膠質氧化矽、熔合矽石、玻璃粉末、石英粉末與玻璃微粒球。當存在無機填料時，本發明之可固化助熔組成物較佳係含有0至70 wt%(更佳係0至35 wt%；再更佳係0至20 wt%；最佳係0.1至20 wt%)之無機填料。
本發明之可固化助熔劑組成物，視需要復包括抗氧化劑。當存在氧化劑時，本發明之可固化助熔劑組成物較佳係含有0.01至30 wt%(更佳係0.01至20 wt%)之抗氧化劑。
本發明之可固化助熔劑組成物，視需要復包括反應性稀釋劑。較佳者，該視需要之反應性稀釋劑表現之黏度應低於樹脂成分(於其非固化形態)所表現之黏度。反應性稀釋劑可較佳地選自 單官能基環氧化物(例如，C6-28烷基縮水甘油醚類；C6-28脂肪酸縮水甘油酯類；C6-28烷基酚縮水甘油醚類)與特定多官能基環氧化物(例如，三甲基丙烷三縮水甘油醚；二縮水甘油基苯胺)。當存在反應性稀釋劑時，該反應性稀釋劑之可使用量<50 wt%(以該樹脂成分之重量為基準)。
本發明之可固化助熔劑組成物，視需要復包括常見之釋氣劑。釋氣劑被認為可增進焊料回焊時待焊表面之濕潤性。當存在釋氣劑時，該釋氣劑於可固化助熔劑組成物之總重量計，釋氣劑可使用量為<1 wt%。
本發明之可固化助熔劑組成物，視需要復包括常見之消泡劑。消泡劑被認為可增進於焊料回焊時待焊表面之濕潤性與減少可固化助熔劑組成物於固化時將氣體納入之缺陷。當存在消泡劑時，該消泡劑之用量為<1 wt%之可固化助熔劑組成物。
本發明之可固化助熔劑組成物，視需要復包括常見之黏著促進劑。常見之黏著促進劑包含矽烷，例如縮水甘油氧基丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、三甲氧基矽基丙基化之異氰脲酯、β-(3,4-環氧基環己基)乙基三乙氧基矽烷、縮水甘油氧基丙基二乙氧基甲基矽烷、β-(3,4-環氧基環己基)乙基三甲氧基矽烷、γ-縮水甘油基丙基三乙氧基矽烷、γ-氫硫基丙基三甲氧基矽烷、N-β-(胺乙基)-γ-胺丙基三甲氧基矽烷、雙(三甲氧基矽基丙基)胺和γ-脲基丙基三乙氧基矽烷。當存在黏著促進劑時，該黏著促進劑可使用量為<2 wt%之可固化助熔劑組成物。
本發明之可固化助熔劑組成物，視需要復包括常見之阻燃劑。常見之阻燃劑包含溴化合物(例如，十溴二苯醚、四溴雙酚A、 四溴酞酸酐、三溴酚)；磷化合物(例如，磷酸三苯酯、磷酸三甲苯酯、磷酸三(二甲苯)酯、磷酸甲苯二苯酯)；金屬氫氧化物(例如，氫氧化鎂、氫氧化鋁)；紅磷與其改質物；銻化合物(例如，三氧化二銻、五氧化二銻)；以及，三化合物(例如，三聚氰胺、氰脲酸、三聚氰胺氰脲酸鹽)。若存在阻燃劑時，該阻燃劑可使用量為0.01至35 wt%(較佳者0.01至10 wt%)之可固化助熔劑組成物。
本發明之可固化助熔劑組成物，視需要復包括選自消光劑、染色劑、分散安定劑、螫合劑、熱塑性粒子、截UV劑、整平劑和還原劑之額外添加劑。
本發明之可固化助熔劑組成物可呈含有所有組成分之單包裝系統方式提供。或者，該可固化助熔劑組成物可呈雙包裝系統方式提供；其中，該樹脂成分於第一部份提供而助熔劑和視需要的固化劑則由第二部份提供；而其中，該第一部份與該第二部分係於使用前組合。
本發明之可固化助熔劑組成物可用於，舉例來說，電子組件，電子模組和印刷電路板之生產。該可固化助熔劑組成物可由任何常見之技術(包含，液體噴霧技術、液體發泡技術、拾浸技術與波浪(wave)技術或其他可用於將液體或半固體分注至矽晶粒或基板之其他常見技術)施加至待焊表面。
本發明之可固化助熔劑組成物，視需要復包括焊料粉末；其中，可固化助熔劑組成物係為焊料糊。較佳者，該焊料粉末係選自Sn/Pb、Sn/Ag、Sn/Ag/Cu、Sn/Cu、Sn/Zn、Sn/Zn/Bi、Sn/Zn/Bi/In、Sn/Bi和Sn/In之合金(較佳者其中該焊料粉末係選自63 wt% Sn/37 wt% Pb、96.5 wt% Sn/3.5 wt% Ag、96 wt% Sn/3.5 wt% Ag/0.5 wt% Cu、96.4 wt% Sn/2.9 wt% Ag/0.5 wt% Cu、96.5 wt% Sn/3 wt% Ag/0.5 wt% Cu、42 wt% Sn/58 wt% Bi、99.3 wt% Sn/0.7 wt% Cu、91 wt% Sn/9 wt% Zn和89 wt% Sn/8 wt% Zn/3 wt% Bi之合金)。
該焊料糊較佳包括：1至50 wt%(更佳者，5至30 wt%，最佳者，5至15 wt%)之由羧酸與式(I)所示助熔劑組合而形成之助熔錯合物以及50至99 wt%之焊料粉末。該焊料糊可藉由常見技術混煉(compounded)，舉例來說，以進行此操作之常見儀器捏合與混合該焊料粉末與助熔錯合物。
該焊料糊可被用於，舉例來說，電子組件、電子模組與印刷電路板之製造。該焊料糊可藉由任何常見之技術(包含，利用焊料印刷機或網版印刷機透過常見之焊罩進行印刷)施加至待焊表面。
用於本發明可固化助熔劑組成物之式(I)所示之助熔劑係可由所屬技藝領域中具通常知識者了解之常見合成技術製備。
本發明之可固化助熔劑組成物中所用之助熔錯合物可藉由下列者製造，舉例而言：(a)組合根據式(I)之助熔劑與羧酸(參見，例如：實施例8)；或(b)於根據式(I)之助熔劑製備期間之某些時點加入羧酸。舉例而言，於(b)中，羧酸與孟烷二胺之混合可於(i)於孟烷二胺反應以形成根據式(I)之助熔劑之前(參見，例如：實施例9)；或(ii)於孟烷二胺反應以形成根據式(I)之助熔劑期間之某些時點(參見，例如：實施例10)。視需要地，可於溶劑(例如：1,3-二氧雜環戊烷)中組合根據式I之助熔劑與羧酸，以促進該助熔錯合物的形成。之後可將該溶劑蒸發而留下該助熔錯合物。
本發明中之形成複數個經封裝之電氣互連的方法可視需要的為覆晶焊接過程之一部分，其中半導體晶片係安裝於印刷電路板 之上，其中該半導體晶片包括複數個第一電氣接點以及其中該印刷電路板包括複數個相應的第二電氣接點。在此覆晶過程中，本發明之可固化助熔劑組成物施加至複數個第一電氣接點和複數個相應的第二電氣接點中之一者或兩者，以促進將該複數個第一電氣接點連結至複數個相應的第二電氣接點而形成電氣互連。較佳者，該覆晶焊接過程復包括固化步驟，其中該樹脂成分被固化，封裝在該複數個第一電氣接點和複數個第二電氣接點間之電氣互連。
於進行形成本發明之複數個經封裝之電氣互連的方法期間，本發明之可固化助熔劑組成物係較佳(在有進行或未進行平滑應用下)施加至印刷電路板而覆蓋複數個第一電氣接點。該焊料係較佳以焊料球形式施加至於半導體晶片上之該複數個相應的第二電氣接點。接著，將該有焊料附著之半導體晶片置於經可固化助熔劑組成物處理之印刷電路板上。之後使半導體晶片對準印刷電路板且將焊料加熱至其回焊溫度。於回焊過程中，該可固化助熔劑組成物作為助熔劑並促進焊料黏著至印刷電路板之該複數個第一電氣接點之黏著性，而於複數個第一電氣接點與複數個相應的第二電氣接點間形成複數個電氣互連。之後將該樹脂成分固化，以封裝該複數個電氣互連。
於回焊過程中，該焊料熔融且流動，以形成複數個電氣互連。該可固化助熔劑組成物較佳直至焊料已流動且形成複數個電氣互連前不應膠化，否則印刷電路板與半導體晶片可能無法正確對準。較佳於可固化助熔劑組成物中之樹脂成分於焊料回焊後完全固化，以形成經封裝之電氣接合。
在下列實施例中將詳細描述本發明之某些具體例
實施例1至5：助熔劑之合成
如表1所指出之助熔劑係由表1所指出之材料使用下列過程製備。具體而言，在有攪拌棒之反應瓶中，加入孟烷二胺(0.1莫耳(mol))(購自陶氏化學公司之PrimeneTM MD)。之後將反應瓶置於可磁力攪拌之加熱板上。之後將反應瓶用氮氣惰化並且於環境溫度將如1表所指出之反應劑A(0.2 mol)加入反應瓶中，並伴隨攪拌。之後將加熱板設定溫度提升至75℃且持續攪拌反應瓶內容物兩小時。之後將加熱板設定溫度提升至140℃且持續攪拌反應瓶內容物再兩小時。之後將加熱板設定溫度減至80℃且於反應瓶加以真空，瓶內減壓至30mmHg。於此條件下持續攪拌反應瓶內容物另兩小時以提供如1表所指出之助熔劑產物。該實施例1至3之助熔劑產物之沸點溫度係由示差掃描熱量測定法(differential scanning calorimetry,DSC)自25℃至500℃於升溫速率10℃/分鐘予以測量。該實施例1至3之助熔劑產物測得之沸點溫度(boiling point temperature,BPT)係提供於表1。此外，該實施例1至3之助熔劑產物於加熱至250℃之質量損失百分比係由熱重分析(thermogravimetric analysis,TGA)自25℃起以升溫速率10℃/分鐘予以測量。該實施例1至3之助熔劑產物測得之質量損失(weight loss,WL)係提供於表1。
實施例6：二聚體助熔劑之合成
二聚體助熔劑係由下列過程製備。於具有攪拌棒之反應瓶中加入孟烷二胺(34g)(購自陶氏化學公司之PrimeneTM)和環氧氯丙烷和雙酚A之液體環氧樹脂反應產物(37.4g)(購自陶氏化學公司之D.E.R.TM 331TM)。之後將反應瓶置於可磁力攪拌之加熱板上。將反應瓶內容物於室溫攪拌過夜，轉變成固體。之後將2-乙基己基環氧縮水甘油醚(37.2g)(購自Momentive Performance Materials)饋入反應瓶中。之後，該反應瓶以一小時時間自室溫加熱升溫至150℃且於150℃維持三小時。之後將反應瓶內容物冷卻至室溫以提供二聚體助熔劑產物。
實施例7：二聚體助熔劑之合成
另一種二聚體助熔劑係由下列過程製備。於具有攪拌棒之反應瓶中加入孟烷二胺(34g)(購自陶氏化學公司之PrimeneTM)和環氧氯丙烷和雙酚A之液體環氧樹脂反應產物(37.4g)(購自陶氏化學公司之D.E.R.TM 331TM)。之後將反應瓶置於可磁力攪拌之加熱板上。將反應瓶內容物於室溫攪拌過夜，轉變成固體。之後將1-萘基縮水甘油醚(40.0g)(購自Momentive Performance Materials)饋入反應瓶中。之後，該反應瓶加熱升溫至75℃且維持在該溫度一小時。之後該反應瓶復加熱一小時時間，自75℃升溫至150℃且於150℃，維持三小時。之後將反應瓶內容物冷卻至室溫以提供二聚體助熔劑產物。
實施例8：助熔錯合物之製備
將依據實施例1所製備之助熔劑(18.07g；33.3毫莫耳)與1,4-二羥基-2-萘甲酸(1.69g；8.3毫莫耳)於環境條件下使用抹刀手動混 合以形成具有助熔劑之胺氮對羧酸之酸含量(-COOH)的當量比為2：1之助熔錯合物。
該助熔錯合物於加熱至230℃之質量損失百分比係由熱重分析(TGA)自25℃起以升溫速率10℃/分鐘予以測量。該助熔錯合物測得之質量損失(WL)係14.2 wt%。
實施例9：助熔錯合物之製備
於具有攪拌棒之反應瓶中加入孟烷二胺(0.33莫耳)(購自陶氏化學公司之PrimeneTM MD)。之後將反應瓶置於可磁力攪拌之加熱板上。之後將反應瓶用氮氣惰化並且於環境溫度將2-乙基己基縮水甘油醚(0.66莫耳)(購自Hexion Specialty Chemicals)加入反應瓶中，並伴隨攪拌。之後將加熱板設定溫度提升至75℃且持續攪拌反應瓶內容物兩小時。之後將加熱板設定溫度提升至140℃且持續攪拌反應瓶內容物再兩小時。將反應瓶內容物冷卻至75℃，之後以30分鐘時間將1,4-二羥基-2-萘甲酸緩慢加入反應瓶中。之後將加熱板設定溫度設定至80℃且於反應瓶加以真空，瓶內減壓至30mmHg。於此條件下持續攪拌反應瓶內容物另兩小時以形成助熔錯合物。
該助熔錯合物於加熱至230℃之質量損失百分比係由熱重分析(TGA)自25℃起以升溫速率10℃/分鐘予以測量。該助熔錯合物測得之質量損失(WL)係14.7 wt%。
實施例10：助熔錯合物之製備
於具有攪拌棒之反應瓶中加入孟烷二胺(0.33莫耳)(購自陶氏化學公司之PrimeneTM MD)。之後將反應瓶置於可磁力攪拌之加熱板上。之後將反應瓶用氮氣惰化並且於環境溫度將1,4-二羥基 -2-萘甲酸(0.083莫耳)以30分鐘時間加入反應瓶中，並伴隨攪拌。之後於環境溫度將2-乙基己基縮水甘油醚(0.66莫耳)(購自Hexion Specialty Chemicals)加入反應瓶中，並伴隨攪拌。之後將加熱板設定溫度提升至75℃且持續攪拌反應瓶內容物兩小時。之後將加熱板設定溫度提升至140℃且持續攪拌反應瓶內容物再兩小時。之後將加熱板設定溫度設定至80℃且於反應瓶加以真空，瓶內減壓至30mmHg。於此條件下持續攪拌反應瓶內容物另兩小時以提供助熔錯合物。
該助熔錯合物於加熱至230℃之質量損失百分比係由熱重分析(TGA)自25℃起以升溫速率10℃/分鐘予以測量。該助熔錯合物測得之質量損失(WL)係13.8 wt%。
實施例11：可固化助熔劑組成物之製備
將根據各實施例10所製備之助熔錯合物以1：1重量比與環氧氯丙烷和雙酚A之液體環氧樹脂反應產物(購自陶氏化學公司之D.E.R.TM 331TM)組合以形成可固化助熔劑組成物。
實施例12：助熔性能之評估
依據實施例11所製備之可固化助熔劑組成物之助熔性能係使用下述過程進行評估。銅試片係用以作為待焊電氣接點。將依據實施例11之可固化助熔劑組成物之小液滴分注於該待焊銅試片表面上。四個直徑0.381 mm之無鉛焊料球(95.5 wt% Sn/4.0 wt% Ag/0.5 wt% Cu)係置於該銅試片之助熔錯合物液滴中。所用之無鉛焊料之熔化範圍係為217至221℃。之後銅試片置於已預加熱至145℃之加熱板上且維持該溫度2分鐘。之後銅試片置於另一已預加熱至260℃之加熱板上且維持該溫度直至達到回焊條件。之後 將銅試片自熱源移開且以下列狀況評估(a)原始放置之四個焊料球之熔合程度與聚結程度，(b)所得聚結焊料之尺寸，以評判流動與擴散以及(c)焊料對銅試片表面的鏈連結。將該可固化助熔劑組成物之助熔性能於0至4之量尺分數測定為4，其中：0=焊料液滴間無熔合且與銅試片間無焊料鏈連結；1,2=焊料液滴間部份至完全熔合，但與銅試片間無焊料鏈連結；3=焊料液滴間完全熔合，但焊料擴散與流動極微；4=焊料液滴間完全熔合，於銅試片表面有良好焊料擴散且流動並且與銅試片間有焊料鏈連結。

Claims (10)

  1. 一種可固化助熔劑組成物，包括下列初始成分：每分子具有至少兩個環氧乙烷基之樹脂成分；羧酸；式(I)所示之助熔劑： 其中，R1、R2、R3和R4係獨立選自氫、經取代之C1-80烷基、未經取代之C1-80烷基、經取代之C7-80芳基烷基及未經取代之C7-80芳基烷基；且其中，R1、R2、R3和R4中的0至3者係為氫；以及，視需要之固化劑。
  2. 如申請專利範圍第1項所述之可固化助熔劑組成物，其中，該羧酸係選自由C8-20脂肪族單羧酸、C2-20脂肪族二羧酸、C6-20芳香族羧酸及其混合物所組成群組。
  3. 如申請專利範圍第2項所述之可固化助熔劑組成物，其中，該羧酸係選自由辛酸、壬酸、十一酸、十二酸、十三酸、十四酸、十五酸、十六酸、十七酸、硬脂酸、羥基硬脂酸、油酸，亞麻油酸、α-次亞麻油酸、二十酸、草酸、丙二酸、琥珀酸、蘋果酸、戊二酸、己二酸、庚二酸、辛二酸、苯甲酸、酞酸、異酞酸、對酞酸、1,2,3-苯三甲酸、偏苯三甲酸、1,3,5-苯三甲酸、 1,2,3,5-苯四甲酸、1,2,3,4-苯四甲酸、1,2,4,5-苯四甲酸、苯六甲酸、甲基苯甲酸、茬甲酸、2,3-二甲基苯甲酸、均三甲基苯甲酸、1,2,3,4-苯四甲酸、肉桂酸、水楊酸、苯甲酸、萘甲酸、酸式酚酞、雙酚酸及其混合物所組成群組。
  4. 如申請專利範圍第1項所述之可固化助熔劑組成物，其中，該助熔劑組成物具有該助熔劑之胺氮對該羧酸之酸含量(-COOH)之當量比為1：1至20：1。
  5. 如申請專利範圍第1項所述之可固化助熔劑組成物，其中，於該經取代之C1-80烷基和該經取代之C7-80芳基烷基中之取代基係選自-OH基、-OR5基、-COR5-基、-C(O)R5基、-COR5基、-CHO基、-COOR5基、-OC(O)OR5基、-S(O)(O)R5基、-S(O)R5基、-S(O)(O)NR5 2基、-OC(O)NR6 2基、-C(O)NR6 2基、-CN基、-N(R6)-基和-NO2基中至少一者；其中，R5係選自C1-28烷基、C3-28環烷基、C6-15芳基、C7-28芳基烷基和C7-28烷基芳基；以及其中，R6係選自氫、C1-28烷基、C3-28環烷基、C6-15芳基、C7-28芳基烷基和C7-28烷基芳基。
  6. 如申請專利範圍第1項所述之可固化助熔劑組成物，其中，R1、R2、R3和R4中的1至3者係為氫。
  7. 如申請專利範圍第1項所述之可固化助熔劑組成物，其中，R1、R2、R3和R4係獨立選自氫、-CH2CH(OH)R9和-CH2CH(OH)CH2-O-R9基；其中，R9係選自氫、C1-28烷基、C3-28環烷基、C6-15芳基、C7-28芳基烷基和C7-28烷基芳基。
  8. 如申請專利範圍第4項所述之可固化助熔劑組成物，其中，R1和R2中的一者為氫；且其中，R3和R4中的一者為氫。
  9. 如申請專利範圍第1項所述之可固化助熔劑組成物，復包括焊料粉末。
  10. 一種形成經封裝之冶金接合的方法，包括：提供如申請專利範圍第1項所述之可固化助熔劑組成物；提供複數個第一電氣接點；提供複數個相應的第二電氣接點；提供焊料；將該可固化助熔劑組成物施加至該複數個第一電氣接點和該複數個相應的第二電氣接點中的至少一者；將該複數個第一電氣接點臨近該複數個相應的第二電氣接點放置；加熱該焊料超過其回焊溫度，以形成熔融焊料並使該熔融焊料暴露該複數個第一電氣接點和該複數個相應的第二電氣接點；以該熔融焊料自該複數個第一電氣接點和該複數個相應的第二電氣接點置換該可固化助熔劑組成物，並於該複數個第一電氣接點和該複數個相應的第二電氣接點間形成複數個電氣互連；以及，固化該可固化熱固性樹脂組成物，封裝該複數個電氣互連。
TW101135055A 2011-09-30 2012-09-25 可固化助熔劑組成物及焊接方法 TWI473850B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/250,297 US8430295B2 (en) 2011-09-30 2011-09-30 Curable flux composition and method of soldering

Publications (2)

Publication Number Publication Date
TW201319140A true TW201319140A (zh) 2013-05-16
TWI473850B TWI473850B (zh) 2015-02-21

Family

ID=47827361

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101135055A TWI473850B (zh) 2011-09-30 2012-09-25 可固化助熔劑組成物及焊接方法

Country Status (7)

Country Link
US (1) US8430295B2 (zh)
JP (1) JP6050996B2 (zh)
KR (1) KR102060978B1 (zh)
CN (1) CN103042320B (zh)
DE (1) DE102012019199A1 (zh)
FR (1) FR2980730B1 (zh)
TW (1) TWI473850B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613183B (zh) * 2015-11-02 2018-02-01 阿科瑪法國公司 在反應性稀釋劑中脂肪族二醯胺添加劑之經預濃縮及預活化組成物

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8434666B2 (en) * 2011-09-30 2013-05-07 Rohm And Haas Electronic Materials Llc Flux composition and method of soldering
JP2013115083A (ja) * 2011-11-25 2013-06-10 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
US20150258638A1 (en) * 2014-03-14 2015-09-17 Indium Corporation Methods and compositions for forming solder bumps on a substrate with radiation curable or thermal curable solder flux
JP5952849B2 (ja) 2014-03-25 2016-07-13 岡村製油株式会社 フラックス及びソルダペースト
JP2016043408A (ja) * 2014-08-27 2016-04-04 富士通株式会社 はんだペースト、電子部品、及び電子機器
KR102604506B1 (ko) * 2017-06-12 2023-11-21 오르멧 서키츠 인코퍼레이티드 양호한 사용가능 시간 및 열전도성을 갖는 금속성 접착제 조성물, 이의 제조 방법 및 이의 용도
KR102307666B1 (ko) * 2018-04-16 2021-10-05 스미또모 베이크라이트 가부시키가이샤 전자 장치의 제조 방법
JP6764123B1 (ja) * 2019-10-04 2020-09-30 千住金属工業株式会社 ソルダペースト
JP7202336B2 (ja) * 2020-09-25 2023-01-11 株式会社タムラ製作所 はんだ組成物、および電子基板の製造方法
US20230041004A1 (en) * 2021-07-28 2023-02-09 Honeywell International Inc. Low melting temperature flux materials for brazing applications and methods of brazing using the same

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2632022A (en) 1950-07-07 1953-03-17 Rohm & Haas Method of preparing 1, 8-diamino-p-menthane
US2897179A (en) 1956-07-18 1959-07-28 Union Carbide Corp Hardener for epoxy resin composition
US3488831A (en) 1967-04-14 1970-01-13 Continental Can Co Fluxing materials for soldering metal surfaces
BE786932A (fr) 1971-07-28 1973-01-29 Int Nickel Ltd Fondants de soudage
US3814638A (en) 1972-05-05 1974-06-04 Int Nickel Co Soldering fluxes
US3944123A (en) * 1974-09-10 1976-03-16 Jacobs Norman L Soldering flux
US4028143A (en) 1974-12-30 1977-06-07 Chevron Research Company Wax-flux composition containing a succinimide salt of an alkylaryl sulfonic acid for soldering
US4165244A (en) 1977-10-21 1979-08-21 Jacobs Norman L Soldering flux and method of using same
DE2828197A1 (de) * 1978-06-27 1980-01-03 Winchester Electronics Gmbh Halogenfreies flussmittel fuer die weichloetung auf kolophoniumbasis
US4196024A (en) 1978-11-02 1980-04-01 E. I. Du Pont De Nemours And Company Alkyl phosphate soldering fluxes
US4360144A (en) 1981-01-21 1982-11-23 Basf Wyandotte Corporation Printed circuit board soldering
USRE32309E (en) 1983-10-31 1986-12-16 Scm Corporation Fusible powdered metal paste
JPH0613600B2 (ja) * 1986-05-14 1994-02-23 旭電化工業株式会社 硬化性エポキシ樹脂組成物
US5145722A (en) 1989-04-11 1992-09-08 Hughes Aircraft Company Method and composition for protecting and enhancing the solderability of metallic surfaces
CN1017324B (zh) * 1989-05-09 1992-07-08 化学工业部晨光化工研究院一分院 一种印制线路板软钎焊用钎剂
US5011546A (en) 1990-04-12 1991-04-30 International Business Machines Corporation Water soluble solder flux and paste
US5004509A (en) * 1990-05-04 1991-04-02 Delco Electronics Corporation Low residue soldering flux
US5128746A (en) 1990-09-27 1992-07-07 Motorola, Inc. Adhesive and encapsulant material with fluxing properties
US5417771A (en) * 1994-02-16 1995-05-23 Takeda Chemical Industries, Ltd. Soldering flux
CN1033691C (zh) * 1994-04-13 1997-01-01 周俊治 一种焊料丝芯用的中性焊剂
US5615827A (en) 1994-05-31 1997-04-01 International Business Machines Corporation Flux composition and corresponding soldering method
US5571340A (en) 1994-09-09 1996-11-05 Fry's Metals, Inc. Rosin-free, low VOC, no-clean soldering flux and method using the same
JP3787857B2 (ja) 1995-03-10 2006-06-21 タムラ化研株式会社 回路基板はんだ付け用フラックス及び回路基板
JP3498427B2 (ja) 1995-06-19 2004-02-16 ソニー株式会社 成形はんだ用フラックス
US5851311A (en) * 1996-03-29 1998-12-22 Sophia Systems Co., Ltd. Polymerizable flux composition for encapsulating the solder in situ
US5958151A (en) 1996-07-22 1999-09-28 Ford Global Technologies, Inc. Fluxing media for non-VOC, no-clean soldering
US6367150B1 (en) 1997-09-05 2002-04-09 Northrop Grumman Corporation Solder flux compatible with flip-chip underfill material
JP3797763B2 (ja) * 1997-09-08 2006-07-19 富士通テン株式会社 フラックス組成物
DE69837103T2 (de) 1998-04-14 2007-11-22 Harima Chemicals, Inc., Kakigawa Lötzusammensetzung und verfahren zum löten mit der zusammensetzung
US6746896B1 (en) * 1999-08-28 2004-06-08 Georgia Tech Research Corp. Process and material for low-cost flip-chip solder interconnect structures
JP4343354B2 (ja) 1999-11-02 2009-10-14 Ａｇｃセイミケミカル株式会社 半田用フラックス這い上がり防止剤組成物とその用途
US6402013B2 (en) * 1999-12-03 2002-06-11 Senju Metal Industry Co., Ltd Thermosetting soldering flux and soldering process
US6217671B1 (en) 1999-12-14 2001-04-17 International Business Machines Corporation Composition for increasing activity of a no-clean flux
JP2001179487A (ja) * 1999-12-17 2001-07-03 Tdk Corp はんだ付け用フラックス
JP2001300766A (ja) 2000-04-27 2001-10-30 Tamura Kaken Co Ltd 回路基板はんだ付用フラックス及び回路基板
CN1247360C (zh) 2000-11-29 2006-03-29 千住金属工业株式会社 焊锡膏
JP3791403B2 (ja) * 2000-12-04 2006-06-28 富士電機ホールディングス株式会社 鉛フリーハンダ対応無洗浄用フラックスおよびこれを含有するハンダ組成物
US6794761B2 (en) 2001-04-26 2004-09-21 Intel Corporation No-flow underfill material
JP3888573B2 (ja) * 2001-06-29 2007-03-07 富士電機ホールディングス株式会社 ハンダ組成物
US20030111519A1 (en) 2001-09-04 2003-06-19 3M Innovative Properties Company Fluxing compositions
TWI228132B (en) 2001-09-26 2005-02-21 Nof Corp Soldering flux composition and solder paste
JP4142312B2 (ja) 2002-02-28 2008-09-03 ハリマ化成株式会社 析出型はんだ組成物及びはんだ析出方法
US6887319B2 (en) 2002-04-16 2005-05-03 Senju Metal Industry Co., Ltd. Residue-free solder paste
AU2003241670A1 (en) 2002-06-17 2003-12-31 Harima Chemicals, Inc. Water-base aluminum-brazing composition and process of brazing
US7182241B2 (en) * 2002-08-09 2007-02-27 Micron Technology, Inc. Multi-functional solder and articles made therewith, such as microelectronic components
DE60312088T2 (de) * 2002-09-26 2007-10-31 Mitsubishi Gas Chemical Co., Inc. Modifiziertes zyklisches aliphatisches Polyamin
US7022410B2 (en) * 2003-12-16 2006-04-04 General Electric Company Combinations of resin compositions and methods of use thereof
US20050170188A1 (en) 2003-09-03 2005-08-04 General Electric Company Resin compositions and methods of use thereof
US7026376B2 (en) 2003-06-30 2006-04-11 Intel Corporation Fluxing agent for underfill materials
US7276673B2 (en) 2003-09-26 2007-10-02 Tdk Corporation Solder bonding method and solder bonding device
TWI262041B (en) 2003-11-14 2006-09-11 Hitachi Chemical Co Ltd Formation method of metal layer on resin layer, printed wiring board, and production method thereof
US7671114B2 (en) 2004-01-26 2010-03-02 Henkel Corporation Adhesive of substituted oxirane or oxetane compound with silver-based, lead-free solder
US20060068521A1 (en) * 2004-09-29 2006-03-30 Song-Hua Shi Method of fabricating microelectronic package using no-flow underfill technology and microelectronic package formed according to the method
MY148568A (en) 2004-12-09 2013-04-30 Lonza Ag Quaternary ammonium salts as a conversion coating or coating enhancement
US20060147683A1 (en) 2004-12-30 2006-07-06 Harima Chemicals, Inc. Flux for soldering and circuit board
US20060272747A1 (en) 2005-06-03 2006-12-07 Renyi Wang Fluxing compositions
US20060275608A1 (en) 2005-06-07 2006-12-07 General Electric Company B-stageable film, electronic device, and associated process
US7351784B2 (en) * 2005-09-30 2008-04-01 Intel Corporation Chip-packaging composition of resin and cycloaliphatic amine hardener
JP2007284471A (ja) * 2006-04-12 2007-11-01 Shin Etsu Chem Co Ltd 液状エポキシ樹脂組成物及び半導体装置
US7780801B2 (en) 2006-07-26 2010-08-24 International Business Machines Corporation Flux composition and process for use thereof
US20080156852A1 (en) 2006-12-29 2008-07-03 Prakash Anna M Solder flux composition and process of using same
US7569164B2 (en) 2007-01-29 2009-08-04 Harima Chemicals, Inc. Solder precoating method
CN102083583B (zh) 2007-07-23 2013-08-14 汉高有限公司 焊剂
JP5033047B2 (ja) * 2008-04-24 2012-09-26 パナソニック株式会社 熱硬化性樹脂組成物及びその製造方法
CN102166692B (zh) * 2011-03-30 2013-07-31 浙江强力焊锡材料有限公司 一种无卤素助焊剂
CN102166689B (zh) * 2011-03-30 2013-05-22 浙江强力焊锡材料有限公司 一种无卤素无铅焊锡膏及其所用助焊剂
US8434666B2 (en) * 2011-09-30 2013-05-07 Rohm And Haas Electronic Materials Llc Flux composition and method of soldering
US8434667B2 (en) * 2011-09-30 2013-05-07 Rohm And Haas Electronic Materials Llc Polyamine, carboxylic acid flux composition and method of soldering

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613183B (zh) * 2015-11-02 2018-02-01 阿科瑪法國公司 在反應性稀釋劑中脂肪族二醯胺添加劑之經預濃縮及預活化組成物

Also Published As

Publication number Publication date
US8430295B2 (en) 2013-04-30
US20130082089A1 (en) 2013-04-04
JP2013079377A (ja) 2013-05-02
TWI473850B (zh) 2015-02-21
CN103042320B (zh) 2015-07-01
KR20130035956A (ko) 2013-04-09
FR2980730B1 (fr) 2014-11-28
CN103042320A (zh) 2013-04-17
KR102060978B1 (ko) 2019-12-31
JP6050996B2 (ja) 2016-12-21
FR2980730A1 (fr) 2013-04-05
DE102012019199A1 (de) 2013-04-04

Similar Documents

Publication Publication Date Title
TWI473850B (zh) 可固化助熔劑組成物及焊接方法
TWI495628B (zh) 可硬化助熔劑組成物及焊接方法
JP6012955B2 (ja) 硬化性アミンフラックス組成物およびはんだ付け方法
TWI450880B (zh) 多胺、羧酸助熔劑組成物及焊接方法
JP2012135815A (ja) ポリアミンフラックス組成物およびはんだ付け方法
TWI438177B (zh) 可固化胺、羧酸助熔劑組成物及焊接方法
TWI458696B (zh) 助熔劑組成物及焊接方法
KR101992639B1 (ko) 아민, 카복실산 플럭스 조성물 및 솔더링 방법

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees