TW201315767A - Prepreg, laminated board, semiconductor package, and method for manufacturing laminated board - Google Patents

Prepreg, laminated board, semiconductor package, and method for manufacturing laminated board Download PDF

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Publication number
TW201315767A
TW201315767A TW101120866A TW101120866A TW201315767A TW 201315767 A TW201315767 A TW 201315767A TW 101120866 A TW101120866 A TW 101120866A TW 101120866 A TW101120866 A TW 101120866A TW 201315767 A TW201315767 A TW 201315767A
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prepreg
resin
epoxy resin
less
base material
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TW101120866A
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Chinese (zh)
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Mitsuo Taketani
Takayuki Baba
Akihiko Tobisawa
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Sumitomo Bakelite Co
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/24Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
    • C08J5/241Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs using inorganic fibres
    • C08J5/244Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs using inorganic fibres using glass fibres
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/0353Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0366Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement reinforced, e.g. by fibres, fabrics
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/02Layered products essentially comprising sheet glass, or glass, slag, or like fibres in the form of fibres or filaments
    • B32B17/04Layered products essentially comprising sheet glass, or glass, slag, or like fibres in the form of fibres or filaments bonded with or embedded in a plastic substance
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/04Layered products comprising a layer of synthetic resin as impregnant, bonding, or embedding substance
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/38Layered products comprising a layer of synthetic resin comprising epoxy resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/24Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
    • C08J5/249Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs characterised by the additives used in the prepolymer mixture
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/0008Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0025Crosslinking or vulcanising agents; including accelerators
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
    • C08K5/34Heterocyclic compounds having nitrogen in the ring
    • C08K5/3442Heterocyclic compounds having nitrogen in the ring having two nitrogen atoms in the ring
    • C08K5/3445Five-membered rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • C08K7/02Fibres or whiskers
    • C08K7/04Fibres or whiskers inorganic
    • C08K7/14Glass
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145Organic substrates, e.g. plastic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2262/00Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
    • B32B2262/10Inorganic fibres
    • B32B2262/101Glass fibres
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2305/00Condition, form or state of the layers or laminate
    • B32B2305/07Parts immersed or impregnated in a matrix
    • B32B2305/076Prepregs
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/08PCBs, i.e. printed circuit boards
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2363/00Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/002Physical properties
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227Other objects, e.g. metallic pieces
    • H05K2201/10378Interposers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Reinforced Plastic Materials (AREA)
  • Laminated Bodies (AREA)
  • Treatments For Attaching Organic Compounds To Fibrous Goods (AREA)

Abstract

This prepreg (100) is obtained by impregnating a fiber base material (101) with a resin composition comprising an epoxy resin and an epoxy resin curing agent. The amount of nitrogen contained in the prepreg (100) is at most 0.10 mass%, and the air permeability of the fiber base material (101) is 3.0-30.0 cm3/cm2/sec.

Description

預浸體、積層板、半導體封裝及積層板之製造方法 Prepreg, laminated board, semiconductor package, and method for manufacturing laminated board

本發明係關於一種預浸體、積層板、半導體封裝及積層板之製造方法。 The present invention relates to a method for producing a prepreg, a laminate, a semiconductor package, and a laminate.

隨著近年來電子機器之高功能化及輕薄短小化之要求,用於該等電子機器之半導體裝置之小型化正迅速發展。 With the recent demand for high functionality and lightness and thinness of electronic devices, the miniaturization of semiconductor devices used in such electronic devices is rapidly progressing.

另一方面,為了使半導體裝置小型化,必需使所使用之電路基板高密度,故而用於電路間之連接而打開之通孔之數量較先前增多,孔密度變高。若孔密度變高,則通孔之壁間距離靠近,故而金屬離子會沿著纖維基材之單纖維遷移而變得容易產生使電路短路之離子遷移。若產生該離子遷移,則會使得電路基板之絕緣可靠性降低(例如參照專利文獻1、2)。 On the other hand, in order to downsize the semiconductor device, it is necessary to increase the density of the circuit board to be used. Therefore, the number of via holes opened for connection between circuits is increased as compared with the prior art, and the hole density is increased. If the pore density becomes high, the distance between the walls of the through holes is close, and thus metal ions migrate along the single fibers of the fiber substrate, and ions which are short-circuited by the circuit are easily caused to migrate. When this ion migration occurs, the insulation reliability of the circuit board is lowered (for example, refer to Patent Documents 1 and 2).

於專利文獻3(日本特開2004-149577號公報)記載有一種預浸體,其係將熱硬化性樹脂組成物含浸於藉由對玻璃布實施扁平加工與開纖加工中之至少一處理而使透氣度成為2~4cm3/cm2/sec之基材,並使該熱硬化性樹脂組成物成為B階段狀態而成。 Japanese Patent Publication No. 2004-149577 discloses a prepreg in which a thermosetting resin composition is impregnated with at least one of flat processing and fiber opening processing of a glass cloth. The substrate having a gas permeability of 2 to 4 cm 3 /cm 2 /sec is formed, and the thermosetting resin composition is brought into a B-stage state.

記載有如下情況:使用此種預浸體之積層板因熱硬化性樹脂組成物對纖維基材之含浸性提高,故使得積層板之強度均一化。因此,可光滑地形成藉由開孔加工形成之孔之內壁,即便孔密度變高使得通孔之壁間距離靠近,亦可抑制離子遷移之產生。 There is a case where the laminate of the prepreg is used because the impregnation property of the thermosetting resin composition on the fibrous base material is improved, so that the strength of the laminated sheet is made uniform. Therefore, the inner wall of the hole formed by the hole processing can be smoothly formed, and even if the hole density becomes high so that the distance between the walls of the through hole is close, the generation of ion migration can be suppressed.

又,記載有如下情況:藉由開纖處理而使玻璃纖維絲立體地展開,對玻璃纖維之含浸性提高,空隙減少,故而可抑制遷移之產生。 In addition, it is described that the glass fiber filament is three-dimensionally developed by the fiber opening treatment, the impregnation property to the glass fiber is improved, and the void is reduced, so that the occurrence of migration can be suppressed.

專利文獻1:日本特開2004-322364號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2004-322364

專利文獻2:日本特開平6-316643號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. Hei 6-316643

專利文獻3:日本特開2004-149577號公報 Patent Document 3: Japanese Laid-Open Patent Publication No. 2004-149577

然而,若對玻璃布等纖維基材進行上述扁平加工或開纖加工,則有纖維基材起毛之情形。若於纖維基材上產生絨毛,則纖維基材之強度會降低,或於絨毛突起之部分產生樹脂積存而使預浸體之表面粗糙。 However, when the above-mentioned flat processing or fiber opening processing is performed on a fiber base material such as glass cloth, the fiber base material may be raised. When fluff is generated on the fibrous base material, the strength of the fibrous base material is lowered, or resin is accumulated in a portion of the pile projection to roughen the surface of the prepreg.

因此,如上述專利文獻3之加工纖維基材提高積層板之絕緣可靠性的技術,雖於提高絕緣可靠性方面有效,但就產率方面而言,尚有改善之餘地。 Therefore, the technique of improving the insulation reliability of the laminated board by the processed fiber base material of the above-mentioned Patent Document 3 is effective in improving the insulation reliability, but there is still room for improvement in terms of productivity.

因此,本發明之課題在於可獲得一種絕緣可靠性優異之積層板且提供一種產率良好之預浸體。 Therefore, an object of the present invention is to provide a laminate having excellent insulation reliability and to provide a prepreg having a good yield.

本發明人等對產生離子遷移之機制進行努力研究。其結果,發現若將預浸體中之氮含量降低至0.10質量%以下,則耐離子遷移性會提高。 The present inventors conducted an effort to study the mechanism of generating ion migration. As a result, it was found that when the nitrogen content in the prepreg is reduced to 0.10% by mass or less, the ion mobility resistance is improved.

即,根據本發明,提供一種預浸體,其係使含有環氧樹脂與環氧樹脂硬化劑之樹脂組成物含浸於纖維基材而獲得者;該預浸體中之氮含量為0.10質量%以下;上述纖維基材之透氣度為3.0cm3/cm2/sec以上、30.0cm3/cm2/sec以下。 That is, according to the present invention, there is provided a prepreg obtained by impregnating a resin substrate containing a resin composition of an epoxy resin and an epoxy resin hardener, wherein the nitrogen content in the prepreg is 0.10% by mass. Hereinafter, the air permeability of the fibrous base material is 3.0 cm 3 /cm 2 /sec or more and 30.0 cm 3 /cm 2 /sec or less.

根據本發明,藉由使用氮含量為0.10質量%以下之上述預浸體,而即便使用具有上述透氣度之纖維基材,亦可使積層板之耐離子遷移性提高。又,具有上述透氣度之纖維基材可抑制起毛之產生而改善預浸體之產率。進而,根據本發明,提供一種積層板,其含有上述預浸體之硬化體。進而,根據本發明,提供一種半導體封裝,其係將半導體元件搭載於對上述積層板進行電路加工獲得之電路基板而成。 According to the present invention, by using the above-mentioned prepreg having a nitrogen content of 0.10% by mass or less, even if a fiber base material having the above air permeability is used, the ion mobility resistance of the laminated plate can be improved. Further, the fibrous base material having the above air permeability can suppress the generation of fluff and improve the yield of the prepreg. Further, according to the present invention, there is provided a laminated board comprising the cured body of the prepreg. Furthermore, according to the present invention, there is provided a semiconductor package in which a semiconductor element is mounted on a circuit board obtained by circuit-processing the laminated board.

進而,根據本發明,提供一種積層板之製造方法,其係進行如下步驟者:使含有環氧樹脂、環氧樹脂硬化劑與溶劑之樹脂清漆含浸於纖維基材而獲得預浸體;加熱上述預浸體而獲得預浸體之硬化體;然後藉由雷射形成通道(via);上述樹脂清漆中之理論氮含量為0.50質量%以下;上述纖維基材之透氣度為3.0cm3/cm2/sec以上30.0cm3/cm2/sec以下。 Further, according to the present invention, there is provided a method for producing a laminated board, which comprises subjecting a resin varnish containing an epoxy resin, an epoxy resin curing agent and a solvent to a fiber base material to obtain a prepreg; and heating the above Precuring the body to obtain a hardened body of the prepreg; then forming a passage by laser; the theoretical nitrogen content in the resin varnish is 0.50% by mass or less; and the air permeability of the fiber substrate is 3.0 cm 3 /cm 2 / sec or more and 30.0 cm 3 /cm 2 /sec or less.

根據本發明,可獲得一種絕緣可靠性優異之積層板且可提供一種產率良好之預浸體。 According to the present invention, a laminate having excellent insulation reliability can be obtained and a prepreg having a good yield can be provided.

上述目的以及其他目的、特徵及優點係藉由以下所述之較佳實施形態及附加於其之以下圖式可更加明確。 The above and other objects, features and advantages of the present invention will become more apparent from

以下,使用圖式對本發明之實施形態進行說明。再者, 於所有圖式中,對相同之構成要素賦予共用之符號,並適當省略說明。又,圖為概略圖,與實際之尺寸比例未必一致。 Hereinafter, embodiments of the present invention will be described using the drawings. Furthermore, In all the drawings, the same constituent elements are given the same reference numerals, and the description is omitted as appropriate. Moreover, the figure is a schematic view, and does not necessarily coincide with the actual size ratio.

(預浸體) (prepreg)

首先,對本實施形態中之預浸體之構成進行說明。圖1係表示本實施形態中之預浸體構成之一例的剖面圖。預浸體100係使含有(A)環氧樹脂與(B)環氧樹脂硬化劑之樹脂組成物P含浸於纖維基材101而獲得。 First, the configuration of the prepreg in the present embodiment will be described. Fig. 1 is a cross-sectional view showing an example of a configuration of a prepreg in the embodiment. The prepreg 100 is obtained by impregnating the fiber substrate 101 with the resin composition P containing the (A) epoxy resin and the (B) epoxy resin curing agent.

預浸體100中之氮含量為0.10質量%以下,較佳為0.08質量%以下,更佳為0.05質量%以下。若預浸體100中之氮含量為上述上限值以下,則可提高積層板之耐離子遷移性。因此,可抑制為了提高耐離子遷移性而對纖維基材進行之扁平加工或開纖加工之類的特別加工處理。因此,可抑制纖維基材之起毛之產生,改善預浸體之產率。 The nitrogen content in the prepreg 100 is 0.10% by mass or less, preferably 0.08% by mass or less, and more preferably 0.05% by mass or less. When the nitrogen content in the prepreg 100 is at most the above upper limit value, the ion mobility resistance of the laminated plate can be improved. Therefore, it is possible to suppress a special processing such as flat processing or fiber opening processing for the fiber base material in order to improve ion migration resistance. Therefore, the occurrence of fuzzing of the fibrous substrate can be suppressed, and the yield of the prepreg can be improved.

積層板之耐離子遷移性提高之原因雖並未明確,但推測如下:若減少預浸體100中之氮含量,則預浸體100之耐濕性會提高。因此,水分變得難以附著於自預浸體100所獲得之積層板之內部,尤其是纖維基材與樹脂間之間隙,而變得難以產生金屬之離子化或金屬離子之遷移。其結果,可抑制離子遷移之產生。 Although the reason why the ion mobility resistance of the laminated board is improved is not clear, it is presumed that if the nitrogen content in the prepreg 100 is reduced, the moisture resistance of the prepreg 100 is improved. Therefore, it becomes difficult for water to adhere to the inside of the laminate obtained from the prepreg 100, in particular, the gap between the fiber substrate and the resin, and it becomes difficult to cause ionization of metal or migration of metal ions. As a result, the generation of ion migration can be suppressed.

預浸體100中之氮含量之測定通常可利用公知之方法進行測定,例如可使用有機元素分析裝置,使預浸體燃焼分解,將產生氣體轉換為N2,並藉由導熱度檢測器進行測定。 The measurement of the nitrogen content in the prepreg 100 can be generally carried out by a known method. For example, an organic element analysis device can be used to decompose the prepreg, convert the generated gas to N 2 , and perform the thermal conductivity detector. Determination.

又,預浸體100中之纖維基材101之透氣度為3.0cm3/cm2/sec以上,更佳為3.5cm3/cm2/sec以上,尤佳為4.0cm3/cm2/sec以上。本實施形態中之預浸體100因耐離子遷移性優異,故可使用透氣度為上述下限值以上之纖維基材。換言之,可抑制為了提高耐離子遷移性而對纖維基材進行之扁平加工或開纖加工之類的特別加工處理。因此,纖維基材101之起毛之產生受到抑制,故而難以產生於絨毛之突起部分容易產生之樹脂積存。因此,可改善預浸體之產率。 Further, the air permeability of the fibrous base material 101 in the prepreg 100 is 3.0 cm 3 /cm 2 /sec or more, more preferably 3.5 cm 3 /cm 2 /sec or more, and particularly preferably 4.0 cm 3 /cm 2 /sec. the above. Since the prepreg 100 of the present embodiment is excellent in ion migration resistance, a fiber base material having a gas permeability of at least the above lower limit value can be used. In other words, it is possible to suppress a special processing such as flat processing or fiber opening processing for the fiber base material in order to improve ion migration resistance. Therefore, the occurrence of fluffing of the fiber base material 101 is suppressed, so that it is difficult to generate resin which is likely to be generated in the protruding portion of the pile. Therefore, the yield of the prepreg can be improved.

又,纖維基材101之透氣度為30.0cm3/cm2/sec以下,更佳為20.0cm3/cm2/sec以下,再更佳為15.0cm3/cm2/sec以下,尤佳為12.0cm3/cm2/sec以下。若纖維基材101之透氣度為上述上限值以下,則可使樹脂組成物對纖維基材之含浸性提高,故而可使積層板之強度均一化。因此,可光滑地形成藉由開孔形成之孔之內壁,而即便孔密度變高使得通孔之壁間距離靠近,亦可抑制離子遷移之產生。 Further, the air permeability of the fibrous base material 101 is 30.0 cm 3 /cm 2 /sec or less, more preferably 20.0 cm 3 /cm 2 /sec or less, still more preferably 15.0 cm 3 /cm 2 /sec or less, and particularly preferably 12.0 cm 3 /cm 2 /sec or less. When the air permeability of the fiber base material 101 is at most the above upper limit value, the impregnation property of the resin composition to the fiber base material can be improved, so that the strength of the laminated plate can be made uniform. Therefore, the inner wall of the hole formed by the opening can be smoothly formed, and even if the hole density becomes high so that the distance between the walls of the through hole is close, the generation of ion migration can be suppressed.

此處,纖維基材101之透氣度例如可藉由扁平加工或開纖加工等加工處理來作調整。 Here, the air permeability of the fiber base material 101 can be adjusted, for example, by processing such as flat processing or fiber opening processing.

再者,透氣度之測定可依據JIS R3420法(弗雷澤型(Frazier Type)法)測定。 Further, the measurement of the air permeability can be measured in accordance with JIS R3420 (Frazier Type method).

繼而,對構成預浸體100之材料詳細進行說明。 Next, the material constituting the prepreg 100 will be described in detail.

本實施形態中之預浸體100係使含有(A)環氧樹脂與(B)環氧樹脂硬化劑之樹脂組成物P含浸於纖維基材 101,然後進行半硬化而獲得之具備纖維基材101與樹脂層103、104的片狀材料。此種結構之片狀材料之介電特性、高溫多濕下之機械、電連接可靠性等各種特性優異,適於製造電路基板用之積層板,故而較佳。 In the prepreg 100 of the present embodiment, the resin composition P containing (A) epoxy resin and (B) epoxy resin hardener is impregnated into the fiber substrate. 101, and then a sheet-like material having the fiber base material 101 and the resin layers 103 and 104 obtained by semi-hardening. The sheet material having such a structure is excellent in various characteristics such as dielectric properties under high temperature and high humidity, and electrical connection reliability, and is suitable for manufacturing a laminate for a circuit board.

(樹脂組成物) (resin composition)

以下,作為含漬於纖維基材101之樹脂組成物P,只要為含有(A)環氧樹脂與(B)環氧樹脂硬化劑者,則並無特別限定,較佳為具有低線膨脹係數及高彈性模數且熱衝擊性之可靠性優異者。 In the following, the resin composition P containing the stain on the fibrous base material 101 is not particularly limited as long as it contains the (A) epoxy resin and the (B) epoxy resin hardener, and preferably has a low coefficient of linear expansion. And high elastic modulus and excellent thermal shock reliability.

(A)環氧樹脂係於分子內具有1個以上環氧丙基之化合物,且其藉由利用加熱使環氧丙基反應而形成立體網狀結構並硬化。於(A)環氧樹脂較佳於1分子含有2個以上之環氧丙基,其原因在於:若僅利用具有1個環氧丙基之化合物,則即便反應亦無法顯示充分之硬化物特性。 (A) The epoxy resin is a compound having one or more epoxy propyl groups in the molecule, and is formed by a reaction of a glycidyl group by heating to form a three-dimensional network structure and harden. The (A) epoxy resin preferably contains two or more epoxy propyl groups per molecule because the use of a compound having one epoxy propyl group does not exhibit sufficient cured product characteristics even in the case of the reaction. .

作為具體之(A)環氧樹脂,例如可列舉:雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、雙酚E型環氧樹脂、雙酚M型環氧樹脂、雙酚P型環氧樹脂、雙酚Z型環氧樹脂等雙酚型環氧樹脂或該等之衍生物;苯酚酚醛清漆(phenol novolac)型環氧樹脂、甲酚酚醛清漆(cresol novolac)型環氧樹脂等酚醛清漆型環氧樹脂;聯苯型環氧樹脂、聯苯芳烷基型環氧樹脂等芳基伸烷基型環氧樹脂;萘型環氧樹脂、蒽型環氧樹脂、苯氧基型環氧樹脂、二環戊二烯型環氧樹脂、降冰片烯型環氧樹脂、金剛烷型環氧樹脂、茀型環氧樹脂等環氧樹脂等。可單獨使用 該等中之1種,亦可併用2種以上等。 Specific examples of the (A) epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol E type epoxy resin, and bisphenol M type. Bisphenol type epoxy resin such as epoxy resin, bisphenol P type epoxy resin, bisphenol Z type epoxy resin or the like; phenol novolac type epoxy resin, cresol novolac ( A phenolic varnish type epoxy resin such as cresol novolac); an aryl alkylene type epoxy resin such as a biphenyl type epoxy resin or a biphenyl aralkyl type epoxy resin; a naphthalene type epoxy resin and a fluorene type ring An epoxy resin such as an oxy-resin, a phenoxy-type epoxy resin, a dicyclopentadiene type epoxy resin, a norbornene type epoxy resin, an adamantane type epoxy resin, or a fluorene type epoxy resin. Can be used alone One of these may be used in combination of two or more types.

(A)環氧樹脂之含量並無特別限定,較佳為樹脂組成物P整體之15質量%以上、80質量%以下。更佳為25質量%以上、60質量%以下。又,若併用液狀之雙酚A型環氧樹脂、雙酚F型環氧樹脂等液狀環氧樹脂,則可提高對纖維基材101之含浸性,故較佳。液狀環氧樹脂之含量更佳為樹脂組成物P整體之3質量%以上、30質量%以下。又,若併用固態之雙酚A型環氧樹脂、雙酚F型環氧樹脂,則可提高對導體之密合性。 The content of the epoxy resin (A) is not particularly limited, but is preferably 15% by mass or more and 80% by mass or less based on the entire resin composition P. More preferably, it is 25 mass% or more and 60 mass% or less. Further, when a liquid epoxy resin such as a liquid bisphenol A type epoxy resin or a bisphenol F type epoxy resin is used in combination, the impregnation property to the fiber base material 101 can be improved, which is preferable. The content of the liquid epoxy resin is more preferably 3% by mass or more and 30% by mass or less based on the entire resin composition P. Further, when a solid bisphenol A type epoxy resin or a bisphenol F type epoxy resin is used in combination, the adhesion to the conductor can be improved.

作為(B)環氧樹脂硬化劑,並無特別限定,例如可列舉酚系硬化劑、脂肪族胺、芳香族胺、二氰基二醯胺、二醯肼化合物、酸酐等。該等之中,尤佳為化學式中不含氮原子之有機化合物,且尤佳為化學式中不含氮原子之酚系硬化劑及酸酐。若使用酚系硬化劑或酸酐,則可更有效率地獲得氮含量為0.10質量%以下之預浸體。 The (B) epoxy resin curing agent is not particularly limited, and examples thereof include a phenol curing agent, an aliphatic amine, an aromatic amine, dicyanodiamine, a dioxane compound, and an acid anhydride. Among these, an organic compound containing no nitrogen atom in the chemical formula is particularly preferable, and a phenol-based curing agent and an acid anhydride containing no nitrogen atom in the chemical formula are particularly preferable. When a phenolic curing agent or an acid anhydride is used, a prepreg having a nitrogen content of 0.10% by mass or less can be obtained more efficiently.

作為(B)環氧樹脂硬化劑之酚系硬化劑係於1分子內具有2個以上酚性羥基之化合物。於在1分子內具有1個酚性羥基之化合物之情形時,由於無法獲得交聯結構,故硬化物特性會惡化而無法使用。 The phenolic curing agent as the (B) epoxy resin curing agent is a compound having two or more phenolic hydroxyl groups in one molecule. In the case of a compound having one phenolic hydroxyl group in one molecule, since the crosslinked structure cannot be obtained, the properties of the cured product are deteriorated and cannot be used.

作為酚系硬化劑,例如可將苯酚酚醛清漆樹脂、烷基苯酚酚醛清漆樹脂、雙酚A酚醛清漆樹脂、二環戊二烯型酚樹脂、苯酚芳烷基型酚樹脂、萜烯改質酚樹脂、聚乙烯酚類等公知慣用者單獨或組合2種以上使用。 As the phenolic curing agent, for example, a phenol novolak resin, an alkylphenol novolak resin, a bisphenol A novolak resin, a dicyclopentadiene type phenol resin, a phenol aralkyl type phenol resin, a terpene modified phenol can be used. A known one or a combination of a resin or a polyvinyl phenol is used alone or in combination of two or more.

酚硬化劑之摻合量與(A)環氧樹脂之當量比(酚性羥 基當量/環氧基當量)較佳為0.1以上、1.0以下。藉此,不殘留未反應之酚硬化劑而提高吸濕耐熱性。於樹脂組成物P併用環氧樹脂與氰酸酯樹脂之情形時,尤佳為0.2以上、0.5以下之範圍。其原因在於:酚樹脂不僅作為硬化劑發揮作用,而且會促進氰酸酯基與環氧基之硬化。 Equivalent ratio of blending amount of phenol hardener to (A) epoxy resin (phenolic hydroxyl The base equivalent/epoxy equivalent weight) is preferably 0.1 or more and 1.0 or less. Thereby, the unreacted phenol curing agent is not left, and the moisture absorption heat resistance is improved. In the case where the epoxy resin and the cyanate resin are used in combination with the resin composition P, it is particularly preferably in the range of 0.2 or more and 0.5 or less. The reason for this is that the phenol resin acts not only as a curing agent but also to harden the cyanate group and the epoxy group.

作為(B)環氧樹脂硬化劑之酸酐,例如可列舉:鄰苯二甲酸酐、四氫鄰苯二甲酸酐、六氫鄰苯二甲酸酐、4-甲基六氫鄰苯二甲酸酐、內亞甲基四氫鄰苯二甲酸酐、十二琥珀酸酐、順丁烯二酸酐等。 Examples of the acid anhydride of the (B) epoxy resin curing agent include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and 4-methylhexahydrophthalic anhydride. Endomethyltetrahydrophthalic anhydride, dodecyric anhydride, maleic anhydride, and the like.

關於作為(B)環氧樹脂硬化劑之二醯肼化合物,例如可列舉:己二酸二醯肼、十二酸二醯肼、間苯二甲酸二醯肼、對羥基苯甲酸二醯肼等羧酸二醯肼等。 Examples of the diterpene compound as the (B) epoxy resin curing agent include diammonium adipate, dinonyl dodecanoate, diterpene isophthalate, dihydroxyp-hydroxybenzoate, and the like. Dicarboxylic acid dioxime and the like.

又,於樹脂組成物P,亦可以所獲得之預浸體100中之氮含量未超過0.10質量%之程度併用下述(C)硬化觸媒。再者,所謂(C)硬化觸媒,係指具有促進(A)環氧樹脂與(B)環氧樹脂硬化劑之硬化反應之功能的觸媒,區別於(B)環氧樹脂硬化劑。 Further, in the resin composition P, the nitrogen content in the obtained prepreg 100 may not exceed 0.10% by mass, and the following (C) curing catalyst may be used. Further, the (C) curing catalyst refers to a catalyst having a function of promoting the curing reaction of the (A) epoxy resin and the (B) epoxy resin curing agent, and is different from the (B) epoxy resin curing agent.

例如可列舉:環烷酸鋅、環烷酸鈷、辛酸亞錫、辛酸鈷、雙乙醯丙酮鈷(II)、三乙醯丙酮鈷(III)等有機金屬鹽;三乙基胺、三丁基胺、二氮雜雙環[2,2,2]辛烷等三級胺類;2-苯基咪唑、2-苯基-4-甲基咪唑、2-乙基-4-甲基咪唑、2-乙基-4-乙基咪唑、2-苯基-4-甲基咪唑、2-苯基-4-甲基-5-羥基咪唑、2-苯基-4,5-二羥基咪唑等咪唑類;苯酚、雙酚A、壬基苯酚等酚化合物; 乙酸、苯甲酸、水楊酸、對甲苯磺酸等有機酸等;鎓鹽化合物等或其混合物。作為(C)硬化觸媒,可單獨使用包括該等中之衍生物之1種,亦可併用包括該等之衍生物之2種以上等。 For example, zinc naphthenate, cobalt naphthenate, stannous octoate, cobalt octoate, cobalt (II) acetoacetate, cobalt (III) triacetate, and the like; triethylamine, tributyl a tertiary amine such as a base amine or a diazabicyclo[2,2,2]octane; 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-ethyl-4-methylimidazole, 2-ethyl-4-ethylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4-methyl-5-hydroxyimidazole, 2-phenyl-4,5-dihydroxyimidazole, etc. Imidazoles; phenolic compounds such as phenol, bisphenol A, nonylphenol; An organic acid such as acetic acid, benzoic acid, salicylic acid or p-toluenesulfonic acid; an onium salt compound or the like or a mixture thereof. As the (C) curing catalyst, one type of the derivative may be used alone, or two or more types including the above-mentioned derivatives may be used in combination.

只要所獲得之預浸體100中之氮含量未超過0.10質量%,則(C)硬化觸媒之含量並無特別限定。例如較佳為樹脂組成物P整體之0.010質量%以上,尤佳為0.10質量%以上。若(C)硬化觸媒之含量為上述下限值以上,則可充分獲得促進硬化之效果。又,(C)硬化觸媒之含量較佳為樹脂組成物P整體之5.0質量%以下,尤佳為2.0質量%以下。若(C)硬化觸媒之含量為上述上限值以下,則可抑制預浸體100之保存性之降低。 The content of the (C) curing catalyst is not particularly limited as long as the nitrogen content in the obtained prepreg 100 is not more than 0.10% by mass. For example, the resin composition P is preferably contained in an amount of 0.010% by mass or more, and more preferably 0.10% by mass or more. When the content of the (C) curing catalyst is at least the above lower limit value, the effect of promoting hardening can be sufficiently obtained. Further, the content of the (C) curing catalyst is preferably 5.0% by mass or less, and particularly preferably 2.0% by mass or less based on the entire resin composition P. When the content of the (C) curing catalyst is at most the above upper limit value, the deterioration of the preservability of the prepreg 100 can be suppressed.

樹脂組成物P更佳為含有(D)無機填充材。作為(D)無機填充材,例如可列舉:滑石、煅燒黏土、未煅燒黏土、雲母、玻璃等矽酸鹽;氧化鈦、氧化鋁、二氧化矽、熔融二氧化矽等氧化物;碳酸鈣、碳酸鎂、水滑石等碳酸鹽;氫氧化鋁、氫氧化鎂、氫氧化鈣等氫氧化物;硫酸鋇、硫酸鈣、亞硫酸鈣等硫酸鹽或亞硫酸鹽;硼酸鋅、偏硼酸鋇、硼酸鋁、硼酸鈣、硼酸鈉等硼酸鹽;氮化鋁、氮化硼、氮化矽、氮化碳等氮化物;鈦酸鍶、鈦酸鋇等鈦酸鹽等。可單獨使用該等中之1種,亦可併用2種以上等。 More preferably, the resin composition P contains (D) an inorganic filler. Examples of the (D) inorganic filler include talc, calcined clay, uncalcined clay, mica, glass, and the like; oxides such as titanium oxide, aluminum oxide, cerium oxide, and molten cerium oxide; calcium carbonate, Carbonate such as magnesium carbonate or hydrotalcite; hydroxide such as aluminum hydroxide, magnesium hydroxide or calcium hydroxide; sulfate or sulfite such as barium sulfate, calcium sulfate or calcium sulfite; zinc borate, barium metaborate and boric acid Boric acid such as aluminum, calcium borate or sodium borate; nitride such as aluminum nitride, boron nitride, tantalum nitride or carbon nitride; titanate such as barium titanate or barium titanate. One of these may be used alone, or two or more of them may be used in combination.

該等之中,尤佳為二氧化矽,就低熱膨脹性優異之方面而言,較佳為熔融二氧化矽(尤其是球狀熔融二氧化矽)。其形狀有粉碎狀、球狀,可採用為了降低樹脂組成物 P之熔融黏度以確保對纖維基材101之含浸性而使用球狀二氧化矽等根據其目的之使用方法。 Among these, cerium oxide is particularly preferable, and in view of excellent low thermal expansion property, molten cerium oxide (especially spherical molten cerium oxide) is preferable. Its shape is pulverized or spherical, and it can be used to reduce the resin composition. The melt viscosity of P is a method of using a spherical cerium oxide or the like in accordance with the purpose thereof to ensure impregnation with the fibrous base material 101.

(D)無機填充材之平均粒徑並無特別限定,較佳為0.01μm以上、3μm以下,尤佳為0.02μm以上、1μm以下。藉由將(D)無機填充材之粒徑設為0.01μm以上,可使清漆成為低黏度而使樹脂組成物P良好地含浸於纖維基材101。又,藉由設為3μm以下,可抑制清漆中(D)無機填充材之沈澱等。該平均粒徑例如可藉由粒度分佈計(島津製作所公司製造,製品名:雷射繞射式粒度分佈測定裝置SALD系列)測定。 The average particle diameter of the inorganic filler (D) is not particularly limited, but is preferably 0.01 μm or more and 3 μm or less, and more preferably 0.02 μm or more and 1 μm or less. By setting the particle diameter of the (D) inorganic filler to 0.01 μm or more, the varnish can be made to have a low viscosity, and the resin composition P can be satisfactorily impregnated into the fiber base material 101. Moreover, by setting it as 3 micrometer or less, precipitation of the (D) inorganic filler in varnish, etc. can be suppressed. The average particle diameter can be measured, for example, by a particle size distribution meter (manufactured by Shimadzu Corporation, product name: laser diffraction type particle size distribution measuring apparatus SALD series).

又,(D)無機填充材並無特別限定,可使用平均粒徑單分散之無機填充材,亦可使用平均粒徑多分散之無機填充材。進而亦可併用1種或2種以上之平均粒徑單分散及/或多分散之無機填充材。 Further, the inorganic filler (D) is not particularly limited, and an inorganic filler having a uniform particle diameter and a single dispersion may be used, and an inorganic filler having a large average particle diameter may be used. Further, one or two or more kinds of inorganic fillers which are monodisperse and/or polydisperse in average particle diameter may be used in combination.

並且,較佳為平均粒徑3μm以下之球狀二氧化矽(尤其是球狀熔融二氧化矽),尤佳為平均粒徑0.02μm以上、1μm以下之球狀熔融二氧化矽。藉此,可提高(D)無機填充材之填充性。 Further, spherical cerium oxide (especially spherical molten cerium oxide) having an average particle diameter of 3 μm or less is preferable, and spherical molten cerium oxide having an average particle diameter of 0.02 μm or more and 1 μm or less is particularly preferable. Thereby, the filling property of (D) inorganic filler can be improved.

(D)無機填充材之含量並無特別限定,較佳為樹脂組成物P整體之2質量%以上、70質量%以下,尤佳為5質量%以上、60質量%以下。若含量為上述範圍內,則尤其是可形成為低熱膨脹、低吸水。 (D) The content of the inorganic filler is not particularly limited, but is preferably 2% by mass or more and 70% by mass or less, and particularly preferably 5% by mass or more and 60% by mass or less based on the entire resin composition P. When the content is within the above range, in particular, it is possible to form low thermal expansion and low water absorption.

又,雖並無特別限定,但較佳於樹脂組成物P進一步含有(E)偶合劑。(E)偶合劑可藉由提高(A)環氧樹脂 與(D)無機填充材之界面之濕潤性,使(A)環氧樹脂及(D)無機填充材均勻固定於纖維基材,而改良耐熱性,尤其是吸濕後之焊接耐熱性。 Further, although not particularly limited, it is preferred that the resin composition P further contains (E) a coupling agent. (E) coupling agent can be improved by (A) epoxy resin The wettability at the interface with the (D) inorganic filler causes the (A) epoxy resin and the (D) inorganic filler to be uniformly fixed to the fiber substrate to improve heat resistance, particularly solder heat resistance after moisture absorption.

作為(E)偶合劑,只要為通常使用者,則可使用任何一種,具體而言,較佳為使用選自環氧矽烷偶合劑、陽離子矽烷偶合劑、胺基矽烷偶合劑、鈦酸酯系偶合劑及聚矽氧油型偶合劑中之1種以上之偶合劑。藉此可提高與(D)無機填充材界面之濕潤性,並可藉此進一步提高耐熱性。 As the (E) coupling agent, any one may be used as long as it is a usual user. Specifically, it is preferably selected from the group consisting of an epoxy decane coupling agent, a cationic decane coupling agent, an amino decane coupling agent, and a titanate system. One or more coupling agents of a coupling agent and a polyoxygenated oil type coupling agent. Thereby, the wettability at the interface with the (D) inorganic filler can be improved, and the heat resistance can be further improved by this.

由於(E)偶合劑之添加量取決於(D)無機填充材之比表面積,故並無特別限定,較佳為相對於(D)無機填充材100質量份為0.05質量%以上、5質量%以下,尤佳為0.1質量%以上、3質量%以下。藉由將含量設為0.05質量%以上,可充分被覆(D)無機填充材,可提高耐熱性。藉由設為5質量%以下,可良好地進行反應,防止彎曲強度等之降低。 The amount of the (E) coupling agent to be added is not particularly limited as long as it depends on the specific surface area of the inorganic filler (D), and is preferably 0.05% by mass or more and 5% by mass based on 100 parts by mass of the (D) inorganic filler. Hereinafter, it is particularly preferably 0.1% by mass or more and 3% by mass or less. By setting the content to 0.05% by mass or more, the inorganic filler can be sufficiently coated (D), and heat resistance can be improved. When it is 5% by mass or less, the reaction can be favorably performed to prevent a decrease in bending strength or the like.

又,於樹脂組成物P亦可含有三聚氰胺樹脂、脲樹脂、氰酸酯樹脂等環氧樹脂以外之熱硬化性樹脂,尤佳為併用氰酸酯樹脂。 Further, the resin composition P may contain a thermosetting resin other than an epoxy resin such as a melamine resin, a urea resin or a cyanate resin, and it is particularly preferable to use a cyanate resin in combination.

作為氰酸酯樹脂之種類,並無特別限定,例如可列舉:酚醛清漆型氰酸酯樹脂、雙酚A型氰酸酯樹脂、雙酚E型氰酸酯樹脂、四甲基雙酚F型氰酸酯樹脂等雙酚型氰酸酯樹脂等。該等之中,就低熱膨脹性之方面而言,較佳為苯酚酚醛清漆型氰酸酯樹脂。又,亦可進而併用1種或2種以上其他氰酸酯樹脂,並無特別限定。氰酸酯樹脂較佳為 樹脂組成物P整體之8質量%以上、20質量%以下。 The type of the cyanate resin is not particularly limited, and examples thereof include a novolac type cyanate resin, a bisphenol A type cyanate resin, a bisphenol E type cyanate resin, and a tetramethylbisphenol F type. A bisphenol type cyanate resin such as a cyanate resin. Among these, a phenol novolac type cyanate resin is preferred in terms of low thermal expansion. Further, one or two or more kinds of other cyanate resins may be used in combination, and are not particularly limited. The cyanate resin is preferably The resin composition P is 8 mass% or more and 20 mass% or less in total.

又,於樹脂組成物P亦可併用苯氧基樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚醯胺樹脂、聚苯醚樹脂、聚醚碸樹脂、聚酯樹脂、聚乙烯樹脂、聚苯乙烯樹脂等熱塑性樹脂;苯乙烯-丁二烯共聚物、苯乙烯-異戊二烯共聚物等聚苯乙烯系熱塑性彈性體、聚烯烴系熱塑性彈性體、聚醯胺系彈性體、聚酯系彈性體等熱塑性彈性體;聚丁二烯、環氧改質聚丁二烯、丙烯酸改質聚丁二烯、甲基丙烯酸改質聚丁二烯等二烯系彈性體。該等之中,較佳為苯氧基樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚醯胺樹脂、聚苯醚樹脂、聚醚碸樹脂等耐熱性之高分子樹脂。藉此,可使預浸體100之厚度均一性優異,且作為配線基板,耐熱性及細微配線之絕緣性優異。又,於該樹脂組成物P亦可視需要而添加顏料、染料、消泡劑、調平劑、紫外線吸收劑、發泡劑、抗氧化劑、難燃劑、離子捕捉劑等上述成分以外之添加物。 Further, in the resin composition P, a phenoxy resin, a polyimine resin, a polyamide amide resin, a polyamide resin, a polyphenylene ether resin, a polyether oxime resin, a polyester resin, or a polyethylene may be used in combination. Thermoplastic resin such as resin or polystyrene resin; polystyrene-based thermoplastic elastomer such as styrene-butadiene copolymer or styrene-isoprene copolymer; polyolefin-based thermoplastic elastomer; and polyamine-based elastomer A thermoplastic elastomer such as a polyester elastomer; a diene elastomer such as polybutadiene, epoxy modified polybutadiene, acrylic modified polybutadiene, or methacrylic modified polybutadiene. Among these, a heat-resistant polymer resin such as a phenoxy resin, a polyimine resin, a polyamidoximine resin, a polyamide resin, a polyphenylene ether resin or a polyether oxime resin is preferable. Thereby, the thickness of the prepreg 100 can be made uniform, and the wiring board is excellent in heat resistance and insulation of the fine wiring. Further, as the resin composition P, additives other than the above components such as a pigment, a dye, an antifoaming agent, a leveling agent, an ultraviolet absorber, a foaming agent, an antioxidant, a flame retardant, and an ion scavenger may be added as needed. .

含浸樹脂組成物P之纖維基材101並無特別限定,可列舉:玻璃布、玻璃織布、玻璃不織布等玻璃纖維基材;碳布、碳纖維織物等碳纖維基材;岩絨等人造礦物基材;聚醯胺樹脂纖維、芳香族聚醯胺樹脂纖維、全芳香族聚醯胺樹脂纖維等聚醯胺系樹脂纖維;聚酯樹脂纖維、芳香族聚酯樹脂纖維、全芳香族聚酯樹脂纖維等聚酯系樹脂纖維;由以聚醯亞胺樹脂纖維、氟樹脂纖維等作為主成分之織布或不織布所構成之合成纖維基材;以牛皮紙、棉短絨 紙、棉絨與牛皮紙漿之混合抄紙等作為主成分之紙基材等有機纖維基材等。該等之中,較佳為玻璃纖維基材。藉此可獲得低吸水性且高強度、低熱膨脹性之預浸體。 The fiber base material 101 containing the resin composition P is not particularly limited, and examples thereof include glass fiber substrates such as glass cloth, glass woven fabric, and glass nonwoven fabric; carbon fiber substrates such as carbon cloth and carbon fiber woven fabric; and artificial mineral substrates such as rock wool. Polyammonium resin fiber such as polyamide resin fiber, aromatic polyamide resin fiber, or wholly aromatic polyamide resin fiber; polyester resin fiber, aromatic polyester resin fiber, and wholly aromatic polyester resin fiber Polyester-based resin fiber; synthetic fiber substrate composed of woven or non-woven fabric containing polyimine resin fiber, fluororesin fiber or the like as a main component; kraft paper, cotton linters An organic fiber base material such as a paper base material as a main component, such as paper, cotton velvet, and kraft pulp mixed papermaking. Among these, a glass fiber substrate is preferred. Thereby, a prepreg having low water absorption and high strength and low thermal expansion property can be obtained.

構成玻璃纖維基材之玻璃例如可列舉:E玻璃、C玻璃、A玻璃、S玻璃、D玻璃、NE玻璃、T玻璃、H玻璃等。該等之中,較佳為E玻璃或T玻璃。藉此可達成預浸體之高彈性化,又,可使預浸體之熱膨脹係數變小。 Examples of the glass constituting the glass fiber substrate include E glass, C glass, A glass, S glass, D glass, NE glass, T glass, and H glass. Among these, E glass or T glass is preferable. Thereby, the high elasticity of the prepreg can be achieved, and the thermal expansion coefficient of the prepreg can be made small.

作為本實施形態所使用之纖維基材,較佳為基重(每1m2之纖維基材之質量)為145g/m2以上、300g/m2以下者,更佳為160g/m2以上、230g/m2以下,再更佳為190g/m2以上、205g/m2以下。 As a fiber base material used in the present embodiment, preferably a basis weight (mass per 1m 2 of the fibrous base material) of 145g / m 2 or more, 300g / m 2 or less persons, more preferably 160g / m 2 or more, 230g / m 2 or less, and still more preferably 190g / m 2 or more, 205g / m 2 or less.

若基重為上述上限值以下,則纖維基材中之樹脂組成物之含浸性會提高,可抑制股線空隙或絕緣可靠性之降低。又,有時可輕易利用二氧化碳、UV、準分子等之雷射形成通孔。又,若基重為上述下限值以上,則玻璃布或預浸體之強度會提高。其結果,有操作性提高、預浸體之製作變容易、或基板之翹曲之降低效果提高的情況。 When the basis weight is at most the above upper limit value, the impregnation property of the resin composition in the fiber base material is improved, and the reduction in strand voids or insulation reliability can be suppressed. Further, it is sometimes possible to easily form a via hole by using a laser such as carbon dioxide, UV, or excimer. Further, when the basis weight is at least the above lower limit value, the strength of the glass cloth or the prepreg is improved. As a result, there is a case where the operability is improved, the production of the prepreg is facilitated, or the effect of reducing the warpage of the substrate is improved.

纖維基材之厚度並無特別限定,較佳為50μm以上、300μm以下,更佳為80μm以上、250μm以下,再更佳為100μm以上、200μm以下。藉由使用具有此種厚度之纖維基材,可進一步提高製造預浸體時之操作性,尤其是翹曲之降低效果較明顯。 The thickness of the fiber base material is not particularly limited, but is preferably 50 μm or more and 300 μm or less, more preferably 80 μm or more and 250 μm or less, and still more preferably 100 μm or more and 200 μm or less. By using the fibrous base material having such a thickness, the workability in the production of the prepreg can be further improved, and in particular, the effect of reducing the warpage is remarkable.

若纖維基材之厚度為上述上限值以下,則纖維基材中之樹脂組成物之含浸性會提高,可抑制股線空隙或絕緣可 靠性之降低。又有時可輕易利用二氧化碳、UV、準分子等之雷射形成通孔。又,若基重為上述下限值以上,則玻璃布或預浸體之強度會提高。其結果,有操作性提高、預浸體之製作變容易、或基板之翹曲之降低效果提高的情況。 When the thickness of the fiber base material is at most the above upper limit value, the impregnation property of the resin composition in the fiber base material is improved, and the strand gap or the insulation can be suppressed. Reduced by the nature. Sometimes, it is easy to use a laser such as carbon dioxide, UV, or excimer to form a via hole. Further, when the basis weight is at least the above lower limit value, the strength of the glass cloth or the prepreg is improved. As a result, there is a case where the operability is improved, the production of the prepreg is facilitated, or the effect of reducing the warpage of the substrate is improved.

又,纖維基材之使用片數並不限於一片,亦可重疊複數片薄纖維基材來使用。再者,於重疊複數片纖維基材使用之情形時,只要其合計之厚度滿足上述範圍即可。 Further, the number of sheets of the fibrous base material used is not limited to one sheet, and a plurality of thin fiber base materials may be stacked and used. Further, in the case where a plurality of fibrous base materials are used in combination, the total thickness thereof may satisfy the above range.

繼而,詳細說明預浸體100之製造方法。 Next, the manufacturing method of the prepreg 100 will be described in detail.

本實施形態中之預浸體100係使含有(A)環氧樹脂與(B)環氧樹脂硬化劑之樹脂組成物P含浸於纖維基材101,然後進行半硬化而獲得。 In the prepreg 100 of the present embodiment, the resin composition P containing the (A) epoxy resin and the (B) epoxy resin curing agent is impregnated into the fibrous base material 101 and then semi-hardened.

使樹脂組成物P含浸於纖維基材101之方法,例如可列舉:使用樹脂組成物P製備樹脂清漆V並將纖維基材101浸漬於樹脂清漆V之方法、藉由各種塗佈機塗佈樹脂清漆V之方法、藉由噴霧而噴附樹脂清漆V之方法、將附有支持基材之樹脂層積層於纖維基材之方法等。該等之中,較佳為將纖維基材101浸漬於樹脂清漆V之方法、將附有支持基材之樹脂層積層於纖維基材之方法。將纖維基材101浸漬於樹脂清漆V之方法可提高樹脂組成物P對纖維基材101之含浸性。再者,於將纖維基材101浸漬於樹脂清漆V之情形時,可使用通常之含浸塗佈設備。 A method of impregnating the fiber base material 101 with the resin composition P, for example, a resin varnish V is prepared by using the resin composition P, and the fiber base material 101 is immersed in the resin varnish V, and the resin is coated by various coaters. A method of varnish V, a method of spraying resin varnish V by spraying, a method of laminating a resin layer with a supporting substrate on a fiber base material, or the like. Among these, a method of immersing the fibrous base material 101 in the resin varnish V and a method of laminating the resin substrate with the support substrate on the fibrous base material are preferred. The method of immersing the fiber base material 101 in the resin varnish V improves the impregnation property of the resin composition P with respect to the fiber base material 101. Further, in the case where the fibrous base material 101 is immersed in the resin varnish V, a usual impregnation coating apparatus can be used.

尤其是於纖維基材101之厚度為0.1mm以下之情形時,較佳為將附有支持基材之樹脂層積層於纖維基材之方法。藉此可自由調節樹脂組成物P對纖維基材101之含浸 量,並可進一步提高預浸體之成形性。再者,於積層膜狀樹脂層之情形時,更佳使用真空之積層裝置等。 In particular, when the thickness of the fibrous base material 101 is 0.1 mm or less, a method of laminating a resin layer with a support substrate to a fibrous base material is preferred. Thereby, the impregnation of the resin substrate P with the fibrous substrate 101 can be freely adjusted. The amount can further improve the formability of the prepreg. Further, in the case of laminating a film-like resin layer, a vacuum lamination device or the like is more preferably used.

樹脂清漆V所使用之溶劑較理想為對樹脂組成物P中之樹脂成分具有良好之溶解性,但於不會造成不良影響之範圍亦可使用不良溶劑。具有良好之溶解性的溶劑例如可列舉:甲醇、乙醇等醇類、甲苯、丙酮、甲基乙基酮、甲基異丁基酮、環己酮、環戊酮、四氫呋喃、二甲基甲醯胺、二甲基乙醯胺、二甲基亞碸、乙二醇、溶纖劑系、卡必醇系等。 The solvent used for the resin varnish V preferably has a good solubility in the resin component in the resin composition P, but a poor solvent can be used in a range which does not cause an adverse effect. Examples of the solvent having good solubility include alcohols such as methanol and ethanol, toluene, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, cyclopentanone, tetrahydrofuran, and dimethylformamidine. Amine, dimethylacetamide, dimethyl hydrazine, ethylene glycol, cellosolve, carbitol, and the like.

該等之中,作為溶劑,尤佳為化學式中不含氮原子之有機化合物,尤佳為醇類、甲基乙基酮、甲苯。若使用化學式中不含氮原子之有機化合物,則可更有效率地獲得氮含量為0.10質量%以下之預浸體。 Among these, as the solvent, an organic compound containing no nitrogen atom in the chemical formula is particularly preferable, and an alcohol, methyl ethyl ketone or toluene is particularly preferable. When an organic compound containing no nitrogen atom in the chemical formula is used, a prepreg having a nitrogen content of 0.10% by mass or less can be obtained more efficiently.

樹脂清漆V之固體含量並無特別限定,較佳為樹脂組成物P之固體含量20質量%以上、90質量%以下,尤佳為50質量%以上、80質量%以下。藉此可進一步提高樹脂清漆V對纖維基材101之含浸性。使樹脂組成物P含浸於纖維基材101之特定溫度並無特別限定,例如可藉由以90℃以上、220℃以下進行乾燥而獲得預浸體100。預浸體100之厚度較佳為20μm以上、100μm以下。 The solid content of the resin varnish V is not particularly limited, and the solid content of the resin composition P is preferably 20% by mass or more and 90% by mass or less, and more preferably 50% by mass or more and 80% by mass or less. Thereby, the impregnation property of the resin varnish V with respect to the fiber base material 101 can be further improved. The specific temperature at which the resin composition P is impregnated into the fibrous base material 101 is not particularly limited. For example, the prepreg 100 can be obtained by drying at 90 ° C or higher and 220 ° C or lower. The thickness of the prepreg 100 is preferably 20 μm or more and 100 μm or less.

又,樹脂清漆V中之理論氮含量為0.50質量%以下,較佳為0.20質量%以下,再更佳為0.10質量%以下。若樹脂清漆V中之理論氮含量為上述上限以下,則可更有效率地獲得氮含量為0.10質量%以下之預浸體。 Further, the theoretical nitrogen content in the resin varnish V is 0.50% by mass or less, preferably 0.20% by mass or less, and more preferably 0.10% by mass or less. When the theoretical nitrogen content in the resin varnish V is at most the above upper limit, a prepreg having a nitrogen content of 0.10% by mass or less can be obtained more efficiently.

再者,所謂樹脂清漆V中之理論氮含量,係指假定樹脂清漆V中所包含之氮僅為源自於化學式中包含氮原子之成分者而算出之值。具體而言,係指自分子量與氮原子數算出各成分所含之氮含量,將其合計之重量除以樹脂清漆整體之重量,將所獲得之值以%表示者。 In addition, the theoretical nitrogen content in the resin varnish V is a value calculated by assuming that the nitrogen contained in the resin varnish V is only a component derived from a nitrogen atom in the chemical formula. Specifically, the nitrogen content contained in each component is calculated from the molecular weight and the number of nitrogen atoms, and the total weight is divided by the weight of the entire resin varnish, and the obtained value is expressed in %.

預浸體100以纖維基材101為中心,樹脂層103與樹脂層104之厚度可以纖維基材101為中心而實質上相同,或亦可不同。換言之,預浸體100之纖維基材厚度方向的中心與預浸體厚度方向的中心亦可偏移。 The prepreg 100 is centered on the fiber base material 101, and the thickness of the resin layer 103 and the resin layer 104 may be substantially the same or may be different from the center of the fiber base material 101. In other words, the center of the fiber substrate in the thickness direction of the prepreg 100 and the center of the thickness direction of the prepreg may also be offset.

(積層板) (Laminated board)

繼而,對本實施形態中之積層板之構成進行說明。本實施形態中之積層板含有使上述預浸體100硬化而獲得之預浸體的硬化體。 Next, the configuration of the laminated board in the present embodiment will be described. The laminated plate in the present embodiment contains a cured body of the prepreg obtained by curing the prepreg 100.

(積層板之製造方法) (Manufacturing method of laminated board)

繼而,對使用上述所獲得之預浸體100之積層板之製造方法進行說明。使用預浸體之積層板之製造方法並無特別限定,例如如下所述。 Next, a method of manufacturing the laminate using the prepreg 100 obtained above will be described. The production method of the laminate using the prepreg is not particularly limited, and is, for example, as follows.

重疊1片以上之預浸體,將金屬箔重疊於其外側之上下雙面或單面,使用貼合裝置或貝克勒裝置於高真空條件下將該等接合,或直接將金屬箔重疊於預浸體之外側之上下雙面或單面。 One or more prepregs are stacked, and the metal foil is superposed on the outer side, the upper and lower sides, or the single side, and the bonding is performed under a high vacuum condition using a bonding device or a Beckler device, or the metal foil is directly superposed on the pre-preg. The outer side of the dip is double-sided or single-sided.

繼而,利用真空加壓機對在預浸體重疊有金屬箔者進行加熱、加壓或利用乾燥機進行加熱,藉此可獲得積層板。 Then, a laminate is obtained by heating, pressurizing, or heating with a drier in which the prepreg is superimposed with a metal foil by a vacuum press.

金屬箔之厚度例如為1μm以上、35μm以下。更佳為 2μm以上、25μm以下。若該金屬箔之厚度為上述下限值以上,則可充分確保製造積層板時之機械強度。又,若厚度為上述上限值以下,則可輕易加工形成細微之電路。 The thickness of the metal foil is, for example, 1 μm or more and 35 μm or less. Better 2 μm or more and 25 μm or less. When the thickness of the metal foil is at least the above lower limit value, the mechanical strength at the time of producing the laminated plate can be sufficiently ensured. Further, when the thickness is equal to or less than the above upper limit value, it is possible to easily form a fine circuit.

作為構成金屬箔之金屬,例如可列舉:銅及銅系合金、鋁及鋁系合金、銀及銀系合金、金及金系合金、鋅及鋅系合金、鎳及鎳系合金、錫及錫系合金、鐵及鐵系合金、柯華合金(商標名)、42合金、鎳鋼或超鎳鋼等Fe-Ni系合金、W或Mo等。又,亦可使用附載體之電解銅箔等。 Examples of the metal constituting the metal foil include copper and copper alloys, aluminum and aluminum alloys, silver and silver alloys, gold and gold alloys, zinc and zinc alloys, nickel and nickel alloys, tin and tin. Alloys, iron and iron alloys, Kehua alloy (trade name), 42 alloy, nickel-steel or ultra-nickel steel and other Fe-Ni alloys, W or Mo. Further, an electrolytic copper foil with a carrier or the like can also be used.

作為上述加熱處理之方法,並無特別限定,例如可使用熱風乾燥裝置、紅外線加熱裝置、加熱輥裝置、平板狀之熱盤加壓裝置等實施。於使用熱風乾燥裝置或紅外線加熱裝置之情形時,可實質上不對上述接合而成者施加壓力下實施。又,於使用加熱輥裝置或平板狀之熱盤加壓裝置之情形時,可藉由對上述接合而成者施加特定之壓力實施。 The method of the heat treatment is not particularly limited, and for example, it can be carried out using a hot air drying device, an infrared heating device, a heating roller device, a flat plate hot plate pressurizing device, or the like. In the case where a hot air drying device or an infrared heating device is used, it can be carried out substantially without applying pressure to the above-mentioned joining. Further, in the case of using a heating roll device or a flat hot plate pressurizing device, it is possible to apply a specific pressure to the above-mentioned joint.

加熱處理時之溫度並無特別限定,較佳設為所使用之樹脂熔融且樹脂之硬化反應不會迅速進行的溫度區域。作為樹脂熔融之溫度,較佳為120℃以上,更佳為150℃以上。又,作為樹脂之硬化反應不會迅速進行之溫度,較佳為250℃以下,更佳為230℃以下。 The temperature at the time of heat treatment is not particularly limited, and it is preferably a temperature region in which the resin to be used is melted and the curing reaction of the resin does not proceed rapidly. The temperature at which the resin is melted is preferably 120 ° C or higher, more preferably 150 ° C or higher. Further, the temperature at which the curing reaction of the resin does not proceed rapidly is preferably 250 ° C or lower, more preferably 230 ° C or lower.

又,加熱處理之時間係根據所使用之樹脂之種類等而不同,故並無特別限定,例如可藉由進行30分鐘以上、300分鐘以下之處理來實施。 In addition, the time of the heat treatment differs depending on the type of the resin to be used and the like, and is not particularly limited. For example, it can be carried out by a treatment of 30 minutes or longer and 300 minutes or shorter.

又,加壓之壓力並無特別限定,例如較佳為0.2MPa以上、6MPa以下,更佳為2MPa以上、5MPa以下。 Further, the pressure of the pressurization is not particularly limited, and is, for example, preferably 0.2 MPa or more and 6 MPa or less, more preferably 2 MPa or more and 5 MPa or less.

又,亦可將膜代替金屬箔積層於本實施形態中之積層板之至少一面上。膜例如可列舉:聚乙烯、聚丙烯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚醯亞胺、氟系樹脂等。 Further, a film may be laminated on at least one surface of the laminate in the present embodiment instead of the metal foil. Examples of the film include polyethylene, polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyimine, and fluorine resin.

(半導體封裝) (semiconductor package)

繼而,對本實施形態中之半導體封裝200進行說明。 Next, the semiconductor package 200 in the present embodiment will be described.

所獲得之積層板可用於如圖2所示之半導體封裝200。作為半導體封裝200之製造方法,例如有如下所述之方法。 The obtained laminate can be used for the semiconductor package 200 as shown in FIG. As a method of manufacturing the semiconductor package 200, for example, there are methods as described below.

於積層板213形成層間連接用之通孔215,並藉由減成法、半加成法等製作配線層。然後,視需要積層增層(於圖2中未圖示),並重複藉由加成法進行層間連接及電路形成之步驟。並且,視需要積層阻焊劑層201,並利用依據上述之方法形成電路,獲得電路基板。此處,一部分或全部之增層及阻焊劑層201可含有纖維基材,或亦可不含有纖維基材。 A through hole 215 for interlayer connection is formed in the laminate 213, and a wiring layer is formed by a subtractive method, a semi-additive method, or the like. Then, a build-up layer (not shown in FIG. 2) is laminated as needed, and the steps of interlayer connection and circuit formation by an additive method are repeated. Further, a solder resist layer 201 is laminated as needed, and a circuit is formed by the above method to obtain a circuit substrate. Here, some or all of the build-up and solder resist layer 201 may or may not contain a fibrous substrate.

繼而將光阻劑塗佈於阻焊劑層201整面後,去除一部分光阻劑而露出一部分阻焊劑層201。再者,於阻焊劑層201亦可使用具有光阻劑之功能之抗蝕劑。於該情形時,可省略塗佈光阻劑之步驟。繼而,去除露出之阻焊劑層,形成開口部209。 Then, after the photoresist is applied to the entire surface of the solder resist layer 201, a part of the photoresist is removed to expose a portion of the solder resist layer 201. Further, a resist having a function as a photoresist can also be used for the solder resist layer 201. In this case, the step of applying the photoresist may be omitted. Then, the exposed solder resist layer is removed to form an opening portion 209.

繼而,進行回焊(reflow)處理,藉此將半導體元件203經由焊接凸塊207固定於作為配線圖案之一部分的連接端子205上。然後,利用密封材211密封半導體元件203、焊接凸塊207等,藉此獲得如圖2所示之半導體封裝200。 Then, a reflow process is performed, whereby the semiconductor element 203 is fixed to the connection terminal 205 which is a part of the wiring pattern via the solder bump 207. Then, the semiconductor element 203, the solder bumps 207, and the like are sealed by the sealing member 211, whereby the semiconductor package 200 shown in FIG. 2 is obtained.

(半導體裝置) (semiconductor device)

繼而,對本實施形態中之半導體裝置300進行說明。 Next, the semiconductor device 300 in the present embodiment will be described.

半導體封裝200可用於如圖3所示之半導體裝置300。作為半導體裝置300之製造方法,並無特別限定,例如有如下所述之方法。 The semiconductor package 200 can be used for the semiconductor device 300 as shown in FIG. The method of manufacturing the semiconductor device 300 is not particularly limited, and for example, there are methods as described below.

首先,藉由將焊膏供給至所獲得之半導體封裝200之阻焊劑層201之開口部209,進行回焊處理,而形成焊接凸塊301。又,焊接凸塊301亦可藉由將預先製作之焊球安裝於開口部209而形成。 First, solder paste is supplied to the opening portion 209 of the solder resist layer 201 of the obtained semiconductor package 200, and a reflow process is performed to form solder bumps 301. Further, the solder bump 301 can also be formed by attaching a solder ball prepared in advance to the opening portion 209.

繼而,接合封裝基板303之連接端子305與焊接凸塊301,藉此將半導體封裝200構裝於構裝基板303,獲得圖3所示之半導體裝置300。 Then, the connection terminal 305 of the package substrate 303 and the solder bump 301 are bonded, whereby the semiconductor package 200 is mounted on the package substrate 303, and the semiconductor device 300 shown in FIG. 3 is obtained.

如上所述,根據本實施形態,可提供絕緣可靠性優異之積層板213用預浸體100。並且,使用積層板213之電路基板係絕緣可靠性優異者。因此,本實施形態中之積層板213可較佳用於要求高密度化、高多層化之印刷配線板等進一步要求絕緣可靠性之用途。 As described above, according to the present embodiment, the prepreg 100 for the laminated board 213 having excellent insulation reliability can be provided. Further, the circuit board using the laminated board 213 is excellent in insulation reliability. Therefore, the laminated board 213 of the present embodiment can be preferably used for applications requiring higher insulation density, such as a printed wiring board having a higher density and a higher multilayer.

以上,對本發明之實施形態進行說明,但該等為本發明之例示,亦可採用上述以外之各種構成。例如,於本實施形態中顯示預浸體為1層之情形,但亦可使用積層有1層以上之預浸體100者而製作積層板。 Although the embodiments of the present invention have been described above, these are examples of the present invention, and various configurations other than the above may be employed. For example, in the present embodiment, the case where the prepreg is one layer is shown, but a laminate having one or more layers of the prepreg 100 may be used.

又,亦可採用將增層進而積層於本實施形態中之積層板上的構成。又,組合層或阻焊層所使用之預浸體中亦可使用本實施形態中之預浸體100。於該情形時,可獲得絕緣 可靠性更為優異之半導體封裝200及半導體裝置300。 Further, it is also possible to adopt a configuration in which the buildup layer is laminated on the laminate on the present embodiment. Further, the prepreg 100 of the present embodiment can also be used for the prepreg used for the combination layer or the solder resist layer. In this case, insulation is available The semiconductor package 200 and the semiconductor device 300 are more excellent in reliability.

實施例 Example

以下,藉由本實施例及比較例對本發明進行說明,但本發明並不限定於該等。再者,於實施例中,份只要未特別特定,則表示質量份。又,各自之厚度係以平均膜厚表示。 Hereinafter, the present invention will be described by way of the present examples and comparative examples, but the present invention is not limited thereto. Further, in the examples, the parts represent parts by mass unless otherwise specified. Further, the respective thicknesses are expressed by an average film thickness.

於實施例及比較例中,使用以下原料。 In the examples and comparative examples, the following raw materials were used.

(1)溴化雙酚A型環氧樹脂(三菱化學公司製造之5047,環氧當量為560) (1) Brominated bisphenol A type epoxy resin (5047 manufactured by Mitsubishi Chemical Corporation, epoxy equivalent of 560)

(2)雙酚A型環氧樹脂(三菱化學公司製造之828,環氧當量為190) (2) Bisphenol A type epoxy resin (828 manufactured by Mitsubishi Chemical Corporation, epoxy equivalent of 190)

(3)雙酚F型環氧樹脂(DIC公司製造之830S,環氧當量為170) (3) bisphenol F type epoxy resin (830S manufactured by DIC Corporation, epoxy equivalent is 170)

(4)1,1,2,2-四(環氧丙基苯基)乙烷型環氧樹脂(三菱化學公司製造之1031,環氧當量為220) (4) 1,1,2,2-tetrakis(epoxypropylphenyl)ethane type epoxy resin (1031 manufactured by Mitsubishi Chemical Corporation, epoxy equivalent of 220)

(5)苯酚酚醛清漆樹脂(DIC公司製造之TD-2090,羥基當量為105) (5) Phenolic novolac resin (TD-2090 manufactured by DIC Corporation, hydroxyl equivalent of 105)

(6)苯酚芳烷基樹脂(三井化學公司製造之XLC-LL,羥基當量為175) (6) Phenol aralkyl resin (XLC-LL manufactured by Mitsui Chemicals Co., Ltd., hydroxyl equivalent: 175)

(7)雙酚A酚醛清漆樹脂(DIC公司製造之VH-4170,羥基當量為115) (7) Bisphenol A novolac resin (VH-4170 manufactured by DIC Corporation, hydroxyl equivalent of 115)

(8)2-苯基咪唑(四國化成公司製) (8) 2-Phenylimidazole (manufactured by Shikoku Chemicals Co., Ltd.)

(9)環氧矽烷(Shin-Etsu Silicones公司製造之KBM-403) (9) Epoxy decane (KBM-403 manufactured by Shin-Etsu Silicones Co., Ltd.)

(10)熔融二氧化矽(Admatechs公司製造之SO-E2,平均粒徑為0.5μm) (10) molten cerium oxide (SO-E2 manufactured by Admatechs Co., Ltd., average particle diameter: 0.5 μm)

(11)氫氧化鋁(日本輕金屬公司製造之BE-033,平均粒徑為3.0μm) (11) Aluminium hydroxide (BE-033, manufactured by Nippon Light Metal Co., Ltd., with an average particle size of 3.0 μm)

(12)二氰基二醯胺(Degussa公司製造) (12) dicyanodiamine (manufactured by Degussa)

(13)4,4'-二胺基二苯基甲烷(東京化成公司製造) (13) 4,4'-Diaminodiphenylmethane (manufactured by Tokyo Chemical Industry Co., Ltd.)

(實施例1) (Example 1)

使用以下順序製作本發明中之積層板。 The laminate of the present invention was produced using the following procedure.

1.樹脂組成物之清漆之製備 1. Preparation of varnish of resin composition

於28.1質量份之溴化雙酚A型環氧樹脂(三菱化學公司製造之5047,環氧當量為560)、20.0質量份之雙酚A型環氧樹脂(三菱化學公司製造之828,環氧當量為190)、16.3質量份之苯酚酚醛清漆樹脂(DIC公司製造之TD-2090,羥基當量為105)、0.03質量份之2-苯基咪唑(四國化成公司製造)、0.8質量份之環氧矽烷(Shin-Etsu Silicone公司製造之KBM-403)、1.5質量份之熔融二氧化矽(Admatechs公司製造之SO-E2,平均粒徑為0.5μm)、33.3質量份之氫氧化鋁(日本輕金屬公司製造之BE-033,平均粒徑為3.0μm)中,添加28.0質量份之甲基乙基酮,並使用高速攪拌裝置攪拌而獲得以固體含量標準計樹脂組成物為78質量%之樹脂清漆。又,算出上述之理論氮含量。再者,於實施例1中,化學式中包含氮原子之成分為2-苯基咪唑。 28.1 parts by mass of brominated bisphenol A type epoxy resin (5047 manufactured by Mitsubishi Chemical Corporation, epoxy equivalent: 560), 20.0 parts by mass of bisphenol A type epoxy resin (828, epoxy manufactured by Mitsubishi Chemical Corporation) Ethylene phenol novolak resin (TD-2090, manufactured by DIC Corporation, hydroxyl equivalent: 105), 0.03 parts by mass of 2-phenylimidazole (manufactured by Shikoku Chemical Co., Ltd.), and 0.8 parts by mass of the equivalent of 190) and 16.3 parts by mass Oxy decane (KBM-403, manufactured by Shin-Etsu Silicone Co., Ltd.), 1.5 parts by mass of molten cerium oxide (SO-E2 manufactured by Admatechs Co., Ltd., average particle diameter: 0.5 μm), and 33.3 parts by mass of aluminum hydroxide (Japanese light metal) In the BE-033 manufactured by the company, the average particle diameter is 3.0 μm, 28.0 parts by mass of methyl ethyl ketone is added, and stirred by a high-speed stirring device to obtain a resin varnish having a resin composition of 78% by mass based on the solid content standard. . Further, the above theoretical nitrogen content was calculated. Further, in Example 1, the component containing a nitrogen atom in the chemical formula is 2-phenylimidazole.

2.預浸體之製造 2. Manufacturing of prepreg

使用上述清漆,相對於208.0質量份之玻璃織布(厚度為0.16mm、基重為208.0g/m2、透氣度為5.1cm3/cm2/sec,日東紡澳門公司製造),含浸以樹脂組成物之固體含量計192.0質量份之清漆,於180℃之乾燥爐乾燥5分鐘,製作樹脂組成物含量為48.0質量%之預浸體。 Using the above varnish, impregnated with resin in an amount of 208.0 parts by mass of glass woven fabric (thickness: 0.16 mm, basis weight: 208.0 g/m 2 , air permeability of 5.1 cm 3 /cm 2 /sec, manufactured by Nitto Denko Macao Co., Ltd.) The varnish of 192.0 parts by mass of the solid content of the composition was dried in a drying oven at 180 ° C for 5 minutes to prepare a prepreg having a resin composition content of 48.0% by mass.

玻璃織布之透氣度係將試樣切割成200mm×500mm,並使用弗雷澤測定器(大榮科學公司製造之AP-360S)作為於水之壓力降低1.27cm時每1平方cm於1秒鐘內通過布之空氣量而求出。 The air permeability of the glass woven fabric was cut into 200 mm × 500 mm, and a Fraser measuring instrument (AP-360S manufactured by Daiei Scientific Co., Ltd.) was used as a pressure reduction of 1.27 cm per 1 cm in 1 sec. The amount of air in the cloth is determined by the amount of air in the cloth.

3.積層板之製造 3. Manufacturing of laminates

重疊4片上述預浸體,並於上下重疊厚度為18μm之電解銅箔(Furukawa Circuit Foil公司製造之GTSMP),於壓力為4MPa、溫度為200℃下進行180分鐘加熱加壓成形,獲得厚度為0.8mm之雙面銅箔積層板。 Four sheets of the above prepreg were stacked, and an electrolytic copper foil (GTSMP manufactured by Furukawa Circuit Foil Co., Ltd.) having a thickness of 18 μm was placed on top of each other, and subjected to heat and pressure molding at a pressure of 4 MPa and a temperature of 200 ° C for 180 minutes to obtain a thickness of 0.8mm double-sided copper foil laminate.

4.印刷配線板之製造 4. Manufacturing of printed wiring boards

於使用65μm之鑽頭對上述所獲得之雙面銅箔積層板進行通孔加工後,浸漬於70℃之膨潤液(Atotech Japan公司製造之Swelling Dip Securigant P)5分鐘,進而浸漬於80℃之過錳酸鉀水溶液(Atotech Japan公司製造之Concentrate Compact CP)15分鐘後,進行中和並進行通孔內之除膠渣處理。繼而,藉由快速蝕刻將電解銅箔層表面蝕刻1μm左右後,將無電解鍍銅形成為厚度0.5μm,並將電解鍍銅用抗蝕劑層形成為厚度18μm,進行圖案鍍銅,以溫度200℃加熱60分鐘進行後熱處理。繼而,剝離鍍敷 抗蝕劑並對整面進行快速蝕刻,形成L/S=75/75μm之圖案。最後於電路表面將阻焊劑(太陽油墨公司製造之PSR4000/AUS308)形成為厚度20μm,獲得雙面印刷配線板。 The double-sided copper foil laminate obtained above was subjected to through-hole processing using a 65 μm drill, and then immersed in a swelling liquid at 70 ° C (Swelling Dip Securigant P manufactured by Atotech Japan Co., Ltd.) for 5 minutes, and further immersed at 80 ° C. After 15 minutes of the potassium manganate aqueous solution (Concentrate Compact CP manufactured by Atotech Japan Co., Ltd.), neutralization was carried out and the desmear treatment in the through holes was performed. Then, the surface of the electrodeposited copper foil layer was etched by about 1 μm by rapid etching, and then electroless copper plating was formed to have a thickness of 0.5 μm, and the resist layer for electrolytic copper plating was formed to have a thickness of 18 μm, and copper plating was performed at a temperature. The post heat treatment was carried out by heating at 200 ° C for 60 minutes. Then, peeling plating The resist was quickly etched over the entire surface to form a pattern of L/S = 75/75 μm. Finally, a solder resist (PSR4000/AUS308 manufactured by Sun Ink Co., Ltd.) was formed to a thickness of 20 μm on the surface of the circuit to obtain a double-sided printed wiring board.

(實施例2~9及比較例1~8) (Examples 2 to 9 and Comparative Examples 1 to 8)

除依據表1及表2所記載之摻合表製備樹脂清漆以外,以與實施例1相同之方式製備樹脂清漆,並製作預浸體、積層板、印刷配線板。 A resin varnish was prepared in the same manner as in Example 1 except that a resin varnish was prepared according to the blending tables described in Tables 1 and 2, and a prepreg, a laminate, and a printed wiring board were produced.

又,對藉由各實施例及比較例而獲得之預浸體及印刷配線板進行以下各評價。將評價結果示於表1。 Moreover, the following evaluations were performed about the prepreg and the printed wiring board obtained by each Example and the comparative example. The evaluation results are shown in Table 1.

1.預浸體之評價 1. Evaluation of prepreg (1)樹脂積存之產生狀況 (1) Production of resin accumulation

藉由目測評價各實施例及各比較例所獲得之預浸體表面之樹脂積存之產生狀況。將未確認到樹脂積存者設為「無異常」,將因玻璃織布之絨毛而於預浸體表面上確認到樹脂積存者作設為「有」。 The state of occurrence of the resin accumulation on the surface of the prepreg obtained in each of the examples and the comparative examples was evaluated by visual observation. When the resin accumulation was not confirmed as "no abnormality", it was confirmed that the resin accumulation was made "yes" on the surface of the prepreg due to the pile of the glass woven fabric.

(2)預浸體中之氮含量之測定 (2) Determination of nitrogen content in prepreg

預浸體中之氮含量係利用以下方法而測定。 The nitrogen content in the prepreg was measured by the following method.

氮含量係使用有機元素分析裝置(PerkinElmer 2400IICHNS)以如下所述之方式進行測定。取20mg之預浸體包入錫板中,並將其放置於裝置中,使燃焼管落下而於氧氣中、1000℃下燃燒,利用導熱度檢測器檢測產生之氮氣。 The nitrogen content was measured in the manner described below using an organic element analyzer (PerkinElmer 2400 IICHNS). A 20 mg prepreg was placed in a tin plate, and placed in a device, the burning tube was dropped, and burned in oxygen at 1000 ° C, and the generated nitrogen gas was detected by a thermal conductivity detector.

2.印刷配線板之評價 2. Evaluation of printed wiring boards (1)焊接耐熱性 (1) Solder heat resistance

利用研磨鋸將上述實施例及比較例所獲得之印刷配線板切割成50mm×50mm,並於85℃ 85%下處理96小時後,將試樣浸漬於260℃之焊接槽30秒,然後調查外觀異常之有無。 The printed wiring board obtained in the above examples and comparative examples was cut into 50 mm × 50 mm by a grinding saw, and treated at 85 ° C and 85% for 96 hours, and then the sample was immersed in a solder bath at 260 ° C for 30 seconds, and then the appearance was investigated. Whether there is an abnormality.

評價基準:無異常 Evaluation criteria: no abnormalities

:有膨脹(整體上存在膨脹之部位) : There is expansion (the whole part of the expansion)

(2)耐遷移性 (2) migration resistance

於85℃ 85%條件下對上述實施例及比較例所獲得之印刷配線板之通孔部分施加50V,並測定300小時處理後之絕緣電阻。再者,通孔與通孔之壁間之距離為0.35μm。此處,將絕緣電阻降低至10-8Ω以下者設為「絕緣降低」。 50 V was applied to the through-hole portions of the printed wiring board obtained in the above Examples and Comparative Examples under the conditions of 85% at 85 ° C, and the insulation resistance after the treatment for 300 hours was measured. Furthermore, the distance between the through hole and the wall of the through hole was 0.35 μm. Here, if the insulation resistance is reduced to 10 -8 Ω or less, it is set to "insulation reduction".

3.評價結果 3. Evaluation results

根據表1可知,實施例1~9無樹脂積存且印刷配線板之焊接耐熱性或耐遷移性優異。 As is clear from Table 1, in Examples 1 to 9, no resin was accumulated, and the printed wiring board was excellent in solder heat resistance and migration resistance.

由於比較例1使用玻璃織布之透氣度較小者,故而產生樹脂積存。 Since the glass woven fabric of Comparative Example 1 has a small air permeability, resin accumulation occurs.

由於比較例2、3於溶劑中使用包含氮者,因此焊接耐熱性及耐遷移性惡化。 Since Comparative Examples 2 and 3 used nitrogen containing a solvent, solder heat resistance and migration resistance were deteriorated.

由於比較例4、6、7於硬化劑中使用包含氮者,故而耐遷移性惡化。 Since Comparative Examples 4, 6, and 7 used nitrogen containing a hardener, migration resistance deteriorated.

由於比較例5使用玻璃織布之透氣度較小者,故而雖於硬化劑使用含有氮者,但未產生遷移。然而,由於使用玻璃織布之透氣度較小者,故而產生樹脂積存。 Since the glass woven fabric of Comparative Example 5 had a small air permeability, the use of nitrogen contained in the curing agent did not cause migration. However, since the glass woven fabric has a small air permeability, resin accumulation occurs.

由於比較例8使用玻璃織布之透氣度超過30cm3/cm2/sec者,故而耐遷移性惡化。 Since the air permeability of the glass woven fabric of Comparative Example 8 was more than 30 cm 3 /cm 2 /sec, the migration resistance was deteriorated.

本申請案主張基於2011年6月28日提出申請之日本特願2011-142630號案之優先權,並將其揭示全部併入於此。 The priority of the Japanese Patent Application No. 2011-142630, filed on Jun. 28, 2011, is hereby incorporated by reference.

100‧‧‧預浸體 100‧‧‧Prepreg

101‧‧‧纖維基材 101‧‧‧Fiber substrate

103、104‧‧‧樹脂層 103, 104‧‧‧ resin layer

200‧‧‧半導體封裝 200‧‧‧Semiconductor package

201‧‧‧阻焊劑層 201‧‧‧Solder layer

203‧‧‧半導體元件 203‧‧‧Semiconductor components

205、305‧‧‧連接端子 205, 305‧‧‧ connection terminal

207、301‧‧‧焊接凸塊 207, 301‧‧‧ solder bumps

209‧‧‧開口部 209‧‧‧ openings

211‧‧‧密封材 211‧‧‧ Sealing material

213‧‧‧積層板 213‧‧‧Laminated boards

215‧‧‧通孔 215‧‧‧through hole

300‧‧‧半導體裝置 300‧‧‧Semiconductor device

303‧‧‧封裝基板 303‧‧‧Package substrate

圖1,係表示本實施形態中之預浸體構成之一例的剖面圖。 Fig. 1 is a cross-sectional view showing an example of a configuration of a prepreg in the embodiment.

圖2,係表示本實施形態中之半導體封裝構成之一例的剖面圖。 Fig. 2 is a cross-sectional view showing an example of a structure of a semiconductor package in the embodiment.

圖3,係表示本實施形態中之半導體裝置構成之一例的剖面圖。 Fig. 3 is a cross-sectional view showing an example of the configuration of a semiconductor device in the embodiment.

100‧‧‧預浸體 100‧‧‧Prepreg

101‧‧‧纖維基材 101‧‧‧Fiber substrate

103、104‧‧‧樹脂層 103, 104‧‧‧ resin layer

Claims (11)

一種預浸體,其係使含有環氧樹脂與環氧樹脂硬化劑之樹脂組成物含浸於纖維基材而獲得者;該預浸體中之氮含量為0.10質量%以下;該纖維基材之透氣度為3.0cm3/cm2/sec以上、30cm3/cm2/sec以下。 A prepreg obtained by impregnating a fiber substrate containing a resin composition containing an epoxy resin and an epoxy resin hardener; the nitrogen content in the prepreg is 0.10% by mass or less; The air permeability is 3.0 cm 3 /cm 2 /sec or more and 30 cm 3 /cm 2 /sec or less. 如申請專利範圍第1項之預浸體,其中,該樹脂組成物更含有硬化觸媒。 The prepreg according to claim 1, wherein the resin composition further contains a hardening catalyst. 如申請專利範圍第2項之預浸體,其中,該硬化觸媒含有咪唑化合物。 The prepreg of claim 2, wherein the hardening catalyst contains an imidazole compound. 如申請專利範圍第1項之預浸體,其中,該纖維基材之基重為145g/m2以上、300g/m2以下。 The scope of the patent prepreg, Paragraph 1, wherein the basis weight of the fibrous base material is 2 or less 145g / m 2 or more, 300g / m. 如申請專利範圍第1項之預浸體,其中,該纖維基材之厚度為50μm以上、300μm以下。 The prepreg according to claim 1, wherein the fibrous base material has a thickness of 50 μm or more and 300 μm or less. 如申請專利範圍第1項之預浸體,其中,該纖維基材為玻璃纖維基材。 The prepreg of claim 1, wherein the fibrous substrate is a glass fiber substrate. 一種積層板,其含有申請專利範圍第1至6項中任一項之預浸體之硬化體。 A laminate comprising the hardened body of the prepreg according to any one of claims 1 to 6. 一種半導體封裝,其係將半導體元件搭載於對申請專利範圍第7項之積層板進行電路加工獲得之電路基板而成。 A semiconductor package in which a semiconductor element is mounted on a circuit board obtained by circuit-processing a laminated board of claim 7 of the patent application. 一種積層板之製造方法,其係進行如下步驟者:使含有環氧樹脂、環氧樹脂硬化劑與溶劑之樹脂清漆含浸於纖維基材而獲得預浸體;加熱該預浸體而獲得預浸體之硬化體;然後 藉由雷射而形成通道;該樹脂清漆中之理論氮含量為0.50質量%以下;且該纖維基材之透氣度為3.0cm3/cm2/sec以上、30cm3/cm2/sec以下。 A method for manufacturing a laminated board, which comprises the steps of: impregnating a fiber base material with a resin varnish containing an epoxy resin, an epoxy resin hardener and a solvent to obtain a prepreg; and heating the prepreg to obtain a prepreg a hardened body; then a channel is formed by laser; the theoretical nitrogen content in the resin varnish is 0.50% by mass or less; and the air permeability of the fibrous substrate is 3.0 cm 3 /cm 2 /sec or more, 30 cm 3 / Cm 2 /sec or less. 如申請專利範圍第9項之積層板之製造方法,其中,該環氧樹脂硬化劑為於化學式中不含氮原子之有機化合物。 The method for producing a laminate according to the ninth aspect of the invention, wherein the epoxy resin hardener is an organic compound containing no nitrogen atom in the chemical formula. 如申請專利範圍第9或10項之積層板之製造方法,其中,該溶劑為於化學式中不含氮原子之有機化合物。 The method for producing a laminate according to claim 9 or 10, wherein the solvent is an organic compound containing no nitrogen atom in the chemical formula.
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