CN105006436A - Apparatus improving the preparation yield rate of micro-bumps and micro-bump preparation process - Google Patents
Apparatus improving the preparation yield rate of micro-bumps and micro-bump preparation process Download PDFInfo
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- CN105006436A CN105006436A CN201510306527.1A CN201510306527A CN105006436A CN 105006436 A CN105006436 A CN 105006436A CN 201510306527 A CN201510306527 A CN 201510306527A CN 105006436 A CN105006436 A CN 105006436A
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- Prior art keywords
- solder
- photoresist
- wafer
- filler metal
- metal alloy
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Abstract
The invention relates to an apparatus improving the preparation yield rate of micro-bumps and a micro-bump preparation process. The apparatus is characterized in that the apparatus includes a work case, a top cover is arranged on one side of the work case, the inner side of the top cover is provided with multiple infrared heating tubes, multiple flexible holders for holding a wafer are disposed in the work case, a solder filling head is disposed at one side of the wafer, and the solder filling head is equipped with a nozzle. The preparation process includes the following steps: electroplating a Ti/Cu seed layer on the wafer, coating the Ti/Cu seed layer with a photoresist, preparing a solder mask on the surface of the photoresist, and making an opening on the photoresist; electroplating copper in the opening; filling solder alloy from the nozzle to the opening; employing nitrogen to blow off superfluous solder alloy on the surface of the wafer; peeling the photoresist and making the Ti/Cu seed layer below the photoresist exposed; forming bumps through backflow; and etching the Ti/Cu seed layer exposed on the surface. A solder thawing state can be maintained, solder injection can be accurately controlled, the wafer is effectively prevented from breaking, and the yield rate is increased.
Description
Technical field
The present invention relates to a kind of micro convex point that improves and prepare the device of yield and the preparation technology of micro convex point, belong to technical field of semiconductors.
Background technology
Flip-chip(flip-chip) technology has a lot of advantage, mainly comprise following some: there is excellent electrical property and hot property; The restriction of routing pad pitch can be overcome; There is the interconnection length shorter than routing, can time delay be reduced, provide better electricity special energy; For high speed or high-frequency design provide more excellent signal integrity; Be applicable to batch production.Along with the development of Flip-chip technology and the sharply increase of flip-chip I/O number, also more and more higher to the requirement of high density micro convex point technology.
The method that IBM is paying close attention in recent years always and research and development application printing fills solder shaping prepares micro convex point, is called as IMS(Injection Molded Solder) method.This technology mainly utilizes solder filling head to be filled into by solder in the photoresist of crystal column surface coating, and then cooling forming forms micro convex point after stripping photoresist backflow.
The advantage maximum compared with the plating micro convex point preparation method of industry main flow of the method is that cost is low, avoids the technique of electroplating solder; Meanwhile, this technique can complete the Solder bumping of different filler composition, is applicable to different products application, and electroplating technology is only only applicable to the micro convex point preparation of pure Sn or bianry alloy.This technique is still in development, does not form volume production or has relevant equipment to come out.
This technological process control Problems existing is as follows: first, and IBM exists drawback in the design of solder filling head, solder is taked to the mode of gas-heated and cooling, with the time of this Controlling Technology start and stop.But the time that gas-heated and cooling solder need is longer, cannot control the time that solder injects and stops accurately, greatly reduce output, be unfavorable for commercial application; Secondly, IBM devises the removal that a scraper carries out redundant brazing filler metal after filling solder technique, and the method effectively can not remove the solder of excess surface, affects micro convex point quality; Finally, the possibility of wafer fragment is easily caused in this filling process.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of device improving micro convex point and prepare yield is provided, heating means are fast provided, keep solder to melt situation, accurately control solder and inject; And effectively can prevent the danger of wafer fragment, improve yield.
The present invention also provides a kind of preparation technology of micro convex point, improves and prepares yield, improving yield, be conducive to commercial application.
According to technical scheme provided by the invention, described raising micro convex point prepares the device of yield, it is characterized in that: comprise working box, working box is inner prepares cavity for micro convex point, working box side arranges closeable upper cover, be provided with multiple infrared heating fluorescent tube in the inner side of upper cover, after upper cover is closed prepared by micro convex point cavity and form enclosure space; In described working box, arrange multiple flexible carrier for placing wafer, install solder filling head in the side of wafer, solder filling head is provided with nozzle, and solder filling head is connected with the feed nozzle outside working box.
Further, described flexible carrier comprises the support bar be arranged in working box bottom mounting apertures, and the top of support bar arranges bracket, arranges spring between bracket and working box, and the upper surface of bracket is the supporting surface of wafer.
Further, arrange protruding enclosing portion at the edge of described working box bottom mounting apertures, arrange spacing surrounding edge downward at the edge of bracket, spacing surrounding edge is centered around the outer ring in enclosing portion.
The preparation technology of described micro convex point, is characterized in that, comprises following processing step:
(1) in wafer upper surface plating Ti/Cu Seed Layer;
(2) in Ti/Cu Seed Layer, photoresist is applied;
(3) solder mask is prepared on photoresist surface;
(4) make opening on a photoresist, opening extends to the upper surface of Ti/Cu Seed Layer by solder mask;
(5) electro-coppering in the opening of photoresist, obtains copper post, and the height of copper post is less than the degree of depth of opening;
(6) above copper post, fill brazing filler metal alloy and obtain brazing filler metal alloy layer, the upper surface of brazing filler metal alloy layer is concordant with solder mask; When filling brazing filler metal alloy, the brazing filler metal alloy of thawing situation after heating is entered by the charging aperture of filling head, then is filled to opening part by the nozzle of filling head; With infrared lamp, wafer is heated simultaneously, keep brazing filler metal alloy to be in melting state;
(7), after filling brazing filler metal alloy, nitrogen is adopted brazing filler metal alloy unnecessary for crystal column surface spray to be removed;
(8) photoresist lift off of the wafer upper surface after step (7) being processed, makes the Ti/Cu Seed Layer below photoresist be exposed to surface;
(9) reflux operation makes brazing filler metal alloy form salient point;
(10) the Ti/Cu Seed Layer on surface is exposed to after etching away step (8) process.
The thickness of described Ti/Cu Seed Layer is 100 ~ 300nm.
The thickness of described solder mask is 5 ~ 20 μm.
The present invention has the following advantages: (1) the present invention's application heat lamp heats wafer, provides heating means fast, keeps solder melting state; (2) the present invention accurately can control the speed of solder injection by Control Nozzle slit width, solder viscosity and pressure differential, accurately can control solder and inject; (3) after photoresist or dry film process terminate, prepare one deck solder mask on its surface, apply gas after then filling solder and solder unnecessary for crystal column surface is dispersed, the thorough removing of redundant brazing filler metal can be realized, improve micro convex point quality; (4) the present invention prepares flexible carrier on the brace table of wafer, effectively prevents the danger of wafer fragment, improves yield.
Accompanying drawing explanation
Fig. 1 is the schematic diagram electroplating Ti/Cu Seed Layer on wafer.
Fig. 2 is the schematic diagram applying photoresist in Ti/Cu Seed Layer.
Fig. 3 is the schematic diagram preparing solder mask on a photoresist.
Fig. 4 is the schematic diagram making opening on a photoresist.
Fig. 5 is the schematic diagram of electro-coppering post in the opening.
Fig. 6 is the schematic diagram of filling brazing filler metal alloy layer above copper post.
Fig. 7 is the schematic diagram of stripping photoresist.
Fig. 8 is the schematic diagram that backflow forms salient point.
Fig. 9 is the schematic diagram etching unnecessary Ti/Cu Seed Layer.
Figure 10 is the device schematic diagram that raising micro convex point of the present invention prepares yield.
Figure 11 is the structural representation of described flexible carrier.
Sequence number in figure: wafer 1, Ti/Cu Seed Layer 2, photoresist 3, solder mask 4, opening 5, copper post 6, brazing filler metal alloy layer 7, salient point 8, working box 100, upper cover 102, flexible carrier 103, solder filling head 105, feed nozzle 106, infrared heating fluorescent tube 107, installing hole 108, support bar 109, bracket 110, spring 111, enclosing portion 112, spacing surrounding edge 113.
Embodiment
Below in conjunction with concrete accompanying drawing, the invention will be further described.
As shown in Figure 10, raising micro convex point of the present invention prepares the device of yield, comprises working box 100, and working box 100 is inner prepares cavity for micro convex point, working box 100 side arranges closeable upper cover 102, micro convex point can be prepared cavity and form enclosure space after upper cover 102 is closed; Multiple flexible carrier 103 for placing wafer 1 is set in described working box 100, in the side of wafer 1, solder filling head 105 is installed, solder filling head 105 is provided with nozzle, solder filling head 105 is connected with the feed nozzle 106 outside working box 100, and feed nozzle 106 is for the brazing filler metal alloy in thawing situation after solder filling head 105 conveying heating; Be provided with multiple infrared heating fluorescent tube 107 in the inner side of described upper cover 102, infrared heating fluorescent tube 107 can provide heating means fast, keeps brazing filler metal alloy to be in thawing situation.
As shown in figure 11, described flexible carrier 103 comprises the support bar 109 be arranged in working box 100 bottom mounting apertures 108, the top of support bar 109 arranges bracket 110, spring 111 is set between bracket 110 and working box 100, the upper surface of bracket 110 is used for supporting wafer 1, by the resiliency supported of spring 111, effectively can prevent the danger of wafer fragment, improve yield.In addition, arrange protruding enclosing portion 112 at the edge of described working box 100 bottom mounting apertures 108, arrange spacing surrounding edge 113 downward at the edge of bracket 110, spacing surrounding edge 113 is centered around the outer ring in enclosing portion 112, can play certain position-limiting action.
Embodiment: a kind of preparation technology of micro convex point, comprises following processing step:
(1) be as shown in Figure 1,100 ~ 300nm at the thickness of wafer 1 upper surface plating Ti/Cu Seed Layer 2, Ti/Cu Seed Layer 2;
(2) as shown in Figure 2, Ti/Cu Seed Layer 2 applies photoresist 3; The thickness of described photoresist 3 is determined according to the height of prepared copper pillar bump, is generally 30 ~ 100 μm;
(3) as shown in Figure 3, prepare solder mask 4 on photoresist 3 surface, solder mask 4 can adopt the modes such as silk screen printing, spraying or coating to prepare, and the thickness of solder mask 4 is 5 ~ 20 μm;
(4) as shown in Figure 4, photoresist 3 makes opening 5, opening 5 extends to the upper surface of Ti/Cu Seed Layer 2 by solder mask 4;
(5) as shown in Figure 5, electro-coppering in the opening 5 of photoresist 3, obtains copper post 6; The height of copper post 6 sets as required, is generally 10 ~ 80 μm;
(6) as shown in Figure 6, fill brazing filler metal alloy and obtain brazing filler metal alloy layer 7 above copper post 6, the upper surface of brazing filler metal alloy layer 7 is concordant with solder mask 4; When filling brazing filler metal alloy, the device adopting raising micro convex point as shown in Figure 10 to prepare yield operates, after heating, the brazing filler metal alloy of thawing situation is entered by the charging aperture of filling head, filled to opening 5 place by the nozzle of filling head again, accurately controlled the speed of brazing filler metal alloy injection by Control Nozzle width, thawing situation brazing filler metal alloy viscosity and pressure differential; With infrared lamp, wafer is heated simultaneously, keep brazing filler metal alloy to be in melting state;
(7), after filling brazing filler metal alloy, nitrogen is adopted brazing filler metal alloy unnecessary for crystal column surface spray to be removed;
(8) as shown in Figure 7, the photoresist 3 of the wafer upper surface after step (7) being processed is peeled off, and makes the Ti/Cu Seed Layer 2 below photoresist 3 be exposed to surface;
(9) as shown in Figure 8, reflux operation makes brazing filler metal alloy form salient point 8;
(10) the Ti/Cu Seed Layer 2 on surface is exposed to after as shown in Figure 9, adopting chemical etching method to etch away step (8) process.
The present invention is directed to the method for IBM gas-heated, application heat lamp heats wafer, provides heating means fast, keeps solder melting state.The pressure differential controlled between solder nozzle and cavity controls solder and injects; Meanwhile, the speed of solder injection accurately can be controlled by Control Nozzle slit width, solder viscosity and pressure differential.After photoresist or dry film process terminate, prepare one deck solder mask on its surface, apply gas after then filling solder and solder unnecessary for crystal column surface is dispersed.The present invention can realize the thorough removing of redundant brazing filler metal, improves micro convex point quality; In addition, the brace table of wafer prepares flexible carrier, effectively prevent the danger of wafer fragment, improve yield.
Claims (6)
1. the device improving micro convex point and prepare yield, it is characterized in that: comprise working box (100), working box (100) is inner prepares cavity for micro convex point, working box (100) side arranges closeable upper cover (102), be provided with multiple infrared heating fluorescent tube (107) in the inner side of upper cover (102), after upper cover (102) is closed prepared by micro convex point cavity and form enclosure space; Multiple flexible carrier (103) for placing wafer (1) is set in described working box (100), in the side of wafer (1), solder filling head (105) is installed, solder filling head (105) is provided with nozzle, and solder filling head (105) is connected with the feed nozzle (106) in working box (100) outside.
2. the device improving micro convex point and prepare yield as claimed in claim 1, it is characterized in that: described flexible carrier (103) comprises the support bar (109) be arranged in working box (100) bottom mounting apertures (108), the top of support bar (109) arranges bracket (110), arrange spring (111) between bracket (110) and working box (100), the upper surface of bracket (110) is the supporting surface of wafer (1).
3. the device improving micro convex point and prepare yield as claimed in claim 2, it is characterized in that: protruding enclosing portion (112) is set at the edge of described working box (100) bottom mounting apertures (108), arrange spacing surrounding edge (113) downward at the edge of bracket (110), spacing surrounding edge (113) is centered around the outer ring of enclosing portion (112).
4. a preparation technology for micro convex point, is characterized in that, comprises following processing step:
(1) at wafer (1) upper surface plating Ti/Cu Seed Layer (2);
(2) in Ti/Cu Seed Layer (2), photoresist (3) is applied;
(3) solder mask (4) is prepared on photoresist (3) surface;
(4) on photoresist (3), make opening (5), opening (5) extends to the upper surface of Ti/Cu Seed Layer (2) by solder mask (4);
(5) electro-coppering in the opening (5) in photoresist (3), obtain copper post (6), the height of copper post (6) is less than the degree of depth of opening (5);
(6) fill brazing filler metal alloy in the top of copper post (6) and obtain brazing filler metal alloy layer (7), the upper surface of brazing filler metal alloy layer (7) is concordant with solder mask (4); When filling brazing filler metal alloy, the brazing filler metal alloy of thawing situation after heating is entered by the charging aperture of filling head, then is filled to opening (5) place by the nozzle of filling head; With infrared lamp, wafer is heated simultaneously, keep brazing filler metal alloy to be in melting state;
(7), after filling brazing filler metal alloy, nitrogen is adopted brazing filler metal alloy unnecessary for crystal column surface spray to be removed;
(8) photoresist (3) of the wafer upper surface after step (7) being processed is peeled off, and makes the Ti/Cu Seed Layer (2) of photoresist (3) below be exposed to surface;
(9) reflux operation makes brazing filler metal alloy form salient point (8);
(10) the Ti/Cu Seed Layer (2) on surface is exposed to after etching away step (8) process.
5. the preparation technology of micro convex point as claimed in claim 4, is characterized in that: the thickness of described Ti/Cu Seed Layer (2) is 100 ~ 300nm.
6. the preparation technology of micro convex point as claimed in claim 4, is characterized in that: the thickness of described solder mask (4) is 5 ~ 20 μm.
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| CN201510306527.1A CN105006436A (en) | 2015-06-05 | 2015-06-05 | Apparatus improving the preparation yield rate of micro-bumps and micro-bump preparation process |
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| CN201510306527.1A CN105006436A (en) | 2015-06-05 | 2015-06-05 | Apparatus improving the preparation yield rate of micro-bumps and micro-bump preparation process |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019148574A1 (en) * | 2018-02-02 | 2019-08-08 | 中国电子科技集团公司第五十五研究所 | Method for resistance soldering of semiconductor metallization layer |
| CN111326477A (en) * | 2018-12-14 | 2020-06-23 | 中芯集成电路（宁波）有限公司 | Electroplating method |
| CN117747455A (en) * | 2024-02-21 | 2024-03-22 | 北京大学 | Micro-bump substrate based on laser processing, preparation method and micro-bump interconnection structure |
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| CN117747455A (en) * | 2024-02-21 | 2024-03-22 | 北京大学 | Micro-bump substrate based on laser processing, preparation method and micro-bump interconnection structure |
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Application publication date: 20151028 |