TW201304011A - 半導體裝置 - Google Patents

半導體裝置 Download PDF

Info

Publication number
TW201304011A
TW201304011A TW101103779A TW101103779A TW201304011A TW 201304011 A TW201304011 A TW 201304011A TW 101103779 A TW101103779 A TW 101103779A TW 101103779 A TW101103779 A TW 101103779A TW 201304011 A TW201304011 A TW 201304011A
Authority
TW
Taiwan
Prior art keywords
metal film
film
semiconductor device
young
modulus
Prior art date
Application number
TW101103779A
Other languages
English (en)
Chinese (zh)
Inventor
山本祐廣
Original Assignee
精工電子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 精工電子有限公司 filed Critical 精工電子有限公司
Publication of TW201304011A publication Critical patent/TW201304011A/zh

Links

Classifications

    • H10W72/90—
    • H10W72/59—
    • H10W72/923—
    • H10W72/952—
    • H10W72/983—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
TW101103779A 2011-02-07 2012-02-06 半導體裝置 TW201304011A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011024241A JP5677115B2 (ja) 2011-02-07 2011-02-07 半導体装置

Publications (1)

Publication Number Publication Date
TW201304011A true TW201304011A (zh) 2013-01-16

Family

ID=46587796

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101103779A TW201304011A (zh) 2011-02-07 2012-02-06 半導體裝置

Country Status (5)

Country Link
US (1) US20120199977A1 (enExample)
JP (1) JP5677115B2 (enExample)
KR (1) KR101903188B1 (enExample)
CN (1) CN102629568B (enExample)
TW (1) TW201304011A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5772926B2 (ja) * 2013-01-07 2015-09-02 株式会社デンソー 半導体装置
JP2016143804A (ja) * 2015-02-03 2016-08-08 トヨタ自動車株式会社 半導体装置
JP2017224753A (ja) * 2016-06-16 2017-12-21 セイコーエプソン株式会社 半導体装置及びその製造方法
JP6897141B2 (ja) 2017-02-15 2021-06-30 株式会社デンソー 半導体装置とその製造方法
JP2018186144A (ja) 2017-04-25 2018-11-22 株式会社村田製作所 半導体装置及びパワーアンプモジュール

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09330928A (ja) * 1996-06-13 1997-12-22 Toshiba Corp 配線層の形成方法
JP2005019493A (ja) * 2003-06-24 2005-01-20 Renesas Technology Corp 半導体装置
US6960836B2 (en) * 2003-09-30 2005-11-01 Agere Systems, Inc. Reinforced bond pad
US20050215048A1 (en) * 2004-03-23 2005-09-29 Lei Li Structure and method for contact pads having an overcoat-protected bondable metal plug over copper-metallized integrated circuits
US7741714B2 (en) * 2004-11-02 2010-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structure with stress-buffering layer capping interconnection metal layer
US7656045B2 (en) * 2006-02-23 2010-02-02 Freescale Semiconductor, Inc. Cap layer for an aluminum copper bond pad
TWI316295B (en) * 2006-05-17 2009-10-21 Au Optronics Corp Thin film transistor
JP2009016619A (ja) * 2007-07-05 2009-01-22 Denso Corp 半導体装置及びその製造方法
US8178980B2 (en) * 2008-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Bond pad structure
US8030780B2 (en) * 2008-10-16 2011-10-04 Micron Technology, Inc. Semiconductor substrates with unitary vias and via terminals, and associated systems and methods
US8202741B2 (en) * 2009-03-04 2012-06-19 Koninklijke Philips Electronics N.V. Method of bonding a semiconductor device using a compliant bonding structure

Also Published As

Publication number Publication date
JP2012164825A (ja) 2012-08-30
JP5677115B2 (ja) 2015-02-25
KR101903188B1 (ko) 2018-10-01
CN102629568B (zh) 2016-05-04
KR20120090827A (ko) 2012-08-17
CN102629568A (zh) 2012-08-08
US20120199977A1 (en) 2012-08-09

Similar Documents

Publication Publication Date Title
US7888805B2 (en) Semiconductor device package of stacked semiconductor chips with spacers provided therein
TWI569404B (zh) 晶片封裝體
TW201304011A (zh) 半導體裝置
CN104350586B (zh) 半导体装置
CN105702664A (zh) 半导体封装构造及其制造方法
US20170358546A1 (en) Flip chip
JP5797873B2 (ja) 熱的および機械的特性が改善されたボンド・パッドを有する集積回路
JP4197140B2 (ja) 半導体装置
CN102918637A (zh) 半导体装置及倒装芯片安装件
US20120104597A1 (en) Chip-on-chip structure and manufacturing method therof
WO2021187187A1 (ja) 半導体装置、半導体装置の製造方法、及び電子機器
TWI546914B (zh) 部分圓頂封裝技術
US9078373B1 (en) Integrated circuit structures having off-axis in-hole capacitor and methods of forming
US7592672B2 (en) Grounding structure of semiconductor device including a conductive paste
CN103000539B (zh) 半导体封装构造及其制造方法
JP2012164826A (ja) 半導体装置
JP2010067711A (ja) 半導体装置及びその製造方法
JP2012146734A (ja) 半導体装置およびその製造方法ならびに実装体
TW200910550A (en) Semiconductor device
JP2007059867A (ja) 半導体装置
US10910330B2 (en) Pad structure and integrated circuit die using the same
JP4835230B2 (ja) 半導体装置の実装構造
JP2008010778A (ja) 半導体装置
CN105575914B (zh) 半导体装置
JP5106763B2 (ja) 半導体装置