TW201301462A - 腔穴內焊料互連結構 - Google Patents

腔穴內焊料互連結構 Download PDF

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Publication number
TW201301462A
TW201301462A TW101109702A TW101109702A TW201301462A TW 201301462 A TW201301462 A TW 201301462A TW 101109702 A TW101109702 A TW 101109702A TW 101109702 A TW101109702 A TW 101109702A TW 201301462 A TW201301462 A TW 201301462A
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Taiwan
Prior art keywords
substrate
cavities
dielectric layer
solder
forming
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TW101109702A
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English (en)
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TWI524486B (zh
Inventor
Chuan Hu
Shawna M Liff
Gregory S Clemons
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Intel Corp
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Publication of TW201301462A publication Critical patent/TW201301462A/zh
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Publication of TWI524486B publication Critical patent/TWI524486B/zh

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    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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Abstract

本發明之揭示係有關製造微電子封裝之領域，其中在被沉積在一第一基材上的一介電層中形成腔穴，以維持各被焊接的互連間之分離。在一實施例中，該等腔穴可具有傾斜側壁。在另一實施例中，可在該等腔穴中沉積一焊料膏，且可在加熱之後形成焊料結構。在其他實施例中，可將該等焊料結構放置在該等腔穴中，或可在該第一基材可被連接到的一第二基材上形成該等焊料結構。在另外的其他實施例中，可在該第一基材及第二基材上形成焊料結構。可使該等焊料結構接觸到且回焊到第二基材上之接觸墊或焊料結構，而將該等焊料結構用來形成焊料互連。

Description

腔穴內焊料互連結構
本發明說明之實施例係有關製造微電子封裝之領域，其中在被沉積在一第一基材上的一介電層中形成一些腔穴，而維持各被焊接的互連間之分離。在一實施例中，該等腔穴可具有傾斜側壁。在另一實施例中，可在該等腔穴中沉積一焊料膏，且可在加熱之後形成焊料結構。在其他實施例中，可將該等焊料結構放置在該等腔穴中，或可在該第一基材可被連接到的一第二基材上形成該等焊料結構。在另外的其他實施例中，可在該第一基材及第二基材上形成焊料結構。可使該等焊料結構接觸到且回焊到第二基材上之接觸墊或焊料結構，而將該等焊料結構用來形成焊料互連。在某些情況中，該等腔穴可減少焊料連接的橋接或破裂故障，且可容許較小的互連間距。此外，在某些情況中，可改善該等連接之可靠性。此外，尤其在回應橫向荷重時，可將該等腔穴之壁用來強化或支承焊點(solder joint)。
典型的微電子封裝包含諸如一微電子晶粒等的至少一基材，該至少一基材被安裝到諸如一轉接板(interposer )或一印刷電路板等的另一基材，其中使用可回焊(reflowable)焊料將一基材上之接合墊(bond pad)連接到另一基材上之對應的接觸墊(contact land)。
在下文的詳細說明中，將參照以圖示出可實施申請專利範圍標的的特定實施例之各附圖。將以使熟悉此項技術者足以能夠實施該標的的細節說明這些實施例。應了解：各實施例雖然是不同的，但不必然是互斥的。例如，可在不脫離申請專利範圍標的之精神及範圍下，將本發明中參照一實施例而說明的一特定的特徵、結構、或特性實施於其他實施例中。在本說明書中提及"一個實施例"或"一實施"時，意指參照該實施例而述及的一特定特徵、結構、或特性被包含在本發明內包含的至少一實施例中。因此，使用詞語"一實施"或"在一實施例中"時，不必然都參照到相同的實施例。此外，應了解：可在不脫離申請專利範圍標的之精神及範圍下，修改所揭示的每一實施例內之個別元件的位置或配置。因此，不應以限制之方式理解下文中之詳細說明，且只由被適當詮釋的後附之申請專利範圍以及該等後附之申請專利範圍應享有之完整等效物範圍界定該標的之範圍。在所有該等數個圖式中，相同的代號將參照到相同的或類似的功能，且該等圖式所示之元件不必然互成比例，而是可能放大或縮小個別的元件，以便在本發明說明的上下文中更易於理解該等元件。
本發明說明之實施例係有關製造微電子封裝之領域，其中在被沉積在一第一基材上的一介電層中形成一些腔穴，而維持各被焊接的互連間之分離。在一實施例中，該等 腔穴可具有傾斜側壁。在另一實施例中，可在該等腔穴中沉積一焊料膏，且可在加熱之後形成焊料結構。在其他實施例中，可將該等焊料結構放置在該等腔穴中，或可在該第一基材可被連接到的一第二基材上形成該等焊料結構。在另外的其他實施例中，可在該第一基材及第二基材上形成焊料結構。可使該等焊料結構接觸到且回焊到第二基材上之接觸墊或焊料結構，而將該等焊料結構用來形成焊料互連。在某些情況中，該等腔穴可減少焊料連接的橋接或破裂故障，且可容許較小的互連間距。此外，在某些情況中，可改善該等連接之可靠性。此外，尤其在回應橫向荷重時，可將該等腔穴之壁用來強化或支承焊點(solder joint)。
於製造微電子封裝時，微電子晶粒通常被安裝在基材上，該基材又被安裝到板，該等板提供了該等微電子晶粒與外部組件間之電子通訊路徑。諸如一微處理器、一晶片組、一圖形裝置、一無線裝置、一記憶體裝置、或一特定應用積體電路等的一微電子晶粒可在通常被稱為覆晶(flip-chip)或焊料熔接受控制的晶片連接(Controlled Collapse Chip Connect；簡稱C4)組態之一組態中，經由諸如可回焊焊料凸塊(bump)或球等的複數個互連而被連接到諸如一轉接板及一主機板等的一基材。當以由焊料製成的互連將微電子晶粒連接到基材時，焊料被回焊(亦即，加熱)，而將該焊料固定在該微電子晶粒的接合墊與該基材的接合墊之間。如熟悉此項技術者可了解的，也可以 一熱壓縮(thermo-compression)接合製程連接該微電子晶粒，而在該微電子晶粒的一連接結構與該基材的接合墊之間形成一互連。
雖然C4連接已被廣泛用於微電子工業，但是持續還有增加可被形成的互連的密度之需求。每一單位面積中可形成的互連愈多，則可將所形成的微電子裝置作得愈小。一般而言，微電子裝置的尺寸愈小，其成本將愈低，且其性能將愈強。
第1-9圖示出形成根據本發明揭示的至少一實施例的微電子結構之實施例。第1圖示出一第一基材102，該第一基材102可包括一積體電路晶圓、一印刷電路板、一轉接板、一微電子晶粒、或一微電子裝置封裝。第一基材102可包含諸如鄰接該第一基材之一接觸表面106之複數個接合墊104等的至少一連接結構。如熟悉此項技術者可了解的，該第一基材的接合墊104可以是其中包括(但不限於)銅、鋁、鎳、銀、及以上各項的合金之任何適當的導電材料，且可與積體電路、接點、走線(trace)、及/或第一基材102內之類似元件(未圖示)電通訊。
如第2圖所示，可在該等第一基材接合墊104及該第一基材接觸表面106之上形成一介電層112。在一實施例中，介電層112可包括(但不限於)一可光界定(photo-definable)層或一乾膜(dry film)。在一實施例中，介電層112可以是一化學增幅型負光阻(negative tone chemically amplified photoresist)，而該光阻可以是基於 環氧樹脂、基於酚醛樹脂(novolak)、基於聚醯亞胺(polyimide)、或基於類似的材料。可以其中包括(但不限於)壓印(imprinting)、焊料膏印製(paste printing)、疊合(laminating)、及旋轉塗佈(spin coating)之此項技術中習知的任何技術形成介電層112。
如第3圖所示，可形成穿過介電層112之一些腔穴114，該等腔穴114以第3圖所示之方式露出每一第一基材接合墊104的至少一部分。進一步如第3圖所示，該等腔穴114可相互直接鄰接。在一實施例中，可以其中包括(但不限於)圖案產生及具有微影的蝕刻技術之任何習知技術形成穿過介電層112之該等腔穴114。由於形成了該等腔穴114，所以利用剩餘的介電層112(請參閱第2圖)在該等腔穴114之間形成了介於腔穴之間的壁116。
進一步如第3圖所示，在本發明揭示之一實施例中，可以傾斜側壁122界定該等介於腔穴之間的壁116，使介電層112(請參閱第2圖)的外表面118上之該等腔穴114之寬度大於鄰近的該等第一基材接合墊104之寬度。在本發明說明的一實施例中，該等側壁可具有與第一基材接觸表面106的垂直面成大約10度至60度之間的一角度α。在一實施例中，該等腔穴114可以是實質上為圓錐形的，例如，第4圖所示之截圓錐形。
第5圖示出形成本申請案的傾斜側壁122的一程序200之流程圖。如方塊210所示，可以一基材上之一載體溶劑(carrier solvent)形成諸如一化學增幅型負光阻等 的一介電層。如方塊220所示，可以通常介於大約攝氏90度與100度間之溫度的一軟烤(soft bake)移除該溶劑。如方塊230所示，可諸如以一標準微影技術使該介電層曝光，而形成一所需的圖案。如方塊240所示，可將該基材放置在一被加熱的表面，而執行一曝後烤(post exposure bake)。藉由使用一被加熱的表面，且調整該曝後烤的溫度及持續時間，即可產生以交聯密度(cross link density)及/或數目表示之一梯度，而該梯度可實質上對應於該基材上的熱梯度(thermal gradient)。例如，當該介電材料是一光阻材料時，最接近該被加熱的表面之介電材料可更為被交聯，且/或該介電材料內之光酸(photo-acid)擴散到並未被曝光的區域，且繼續交聯，而最遠離該被加熱的表面之介電材料可較不被交聯，或者光酸的擴散受到限制。如方塊250所示，可完成該介電層的顯影，其中包括：使該介電材料硬化；以及移除該介電材料，而形成該等腔穴。在一實施例中，由於光酸的稠化及/或擴散梯度，在將該介電材料顯影之後，可能在該等腔穴中形成傾斜側壁。換言之，自該介電層的頂部移除了較多的介電材料，而自最接近該被加熱的表面之介電材料移除了較少的材料。如方塊260所示，可執行一隨意的硬烤。在另一實施例中，可藉由調整該高溫硬化的升降溫速率(ramp rate)及量值，而調整交聯密度、介電材料的收縮率、及熱膨脹係數。上述方式特別適用於可能呈現大於10%的收縮率之基於聚醯亞胺的材料。因此，收縮率愈大，或者熱膨脹係 數愈高，則收縮愈大。因此，當使厚介電層產生圖案而要形成垂直側壁時，接觸堅固基材的介電材料呈現經圖案化開孔之關鍵尺寸，而最遠離該基材的介電材料不受約束地收縮，且形成一寬開孔，因而將導致傾斜側壁。
如第6圖所示，該等腔穴114(請參閱第3圖)可被用來作為印製焊料膏124之模，其中焊料膏124被沉積在該等腔穴114(請參閱第3圖)內。如熟悉此項技術者所了解的，可利用沉積焊料膏124的任何習知技術。焊料膏124可以是其中包括(但不限於)散佈在助焊劑中之焊料粉微球的任何習知焊料膏。
如第7圖所示，焊料膏124(請參閱第5圖)被加熱到被稱為"回焊"("reflow")的大約該焊料膏之熔化溫度。因而使焊料膏124實質上呈現被稱為焊球(示於第7圖)之一半球形，或形成具有鄰接第一基材接合墊104的一平坦表面之一曲面結構(示於第18圖)。這些球面及曲面結構將被統稱為"焊料結構126"。焊料結構126呈現的形狀至少部分地取決於焊料本身的內聚力(cohesive force)以及焊料與第一基材接合墊104間之表面能(surface energy)。在該回焊程序期間，焊料膏124內之助焊劑可被揮發，而留下焊料，因而形成了焊料結構126。因此，焊料膏124之體積將大於焊料結構126之體積。因此，側壁122之斜率也可讓適當體積的焊料膏124形成所需的焊料結構126大小。
焊料結構126可以是任何適當的材料，其中包括(但 不限於)諸如63%錫/37%鉛焊料之錫/鉛焊料等的鉛/錫合金、或諸如純錫或錫/鉍、共熔錫/銀、三元錫/銀/銅、共熔錫/銅、及類似的合金之高比率錫合金(例如，90%或更多的錫)等的無鉛焊料。
我們應可了解：可以微球印製法將焊料結構126放置在該等腔穴114中，因而跳過了焊料膏印製及回焊程序，而形成了前文所述之焊料結構126。
如第8圖所示，可使第一基材102之焊料結構126接觸與一第二基材132的一接觸表面136鄰接之一些接觸墊134，其中該等第二基材接觸墊134之圖案或分佈可以是該等第一基材接合墊104之圖案或分佈的實質鏡像。第二基材132可以是(但不限於)一積體電路晶圓、一印刷電路板、一轉接板、一微電子晶粒、或一微電子裝置封裝等的一基材。如熟悉此項技術者可了解的，該等第二基材接觸墊134可以是其中包括(但不限於)銅、鋁、鎳、銀、及以上各項的合金之任何適當的導電材料，且可與積體電路、接點、走線、及/或第二基材132內之類似元件(未圖示)電通訊。
如第9圖所示，在一實施例中，該等焊料結構126可被實質上加熱到其回焊溫度，然後被冷卻而再固化，因而形成了該等第一基材接合墊104與該等第二基材接觸墊134間之焊料互連138，用以將第一基材102連接到第二基材132。在另一實施例中，如熟悉此項技術者可了解的，可將熱壓縮接合(例如，壓力及加熱)用來形成焊料互 連138且將第一基材102連接到第二基材132。
在第10圖所示的本發明說明之另一實施例中，如前文所述，可形成具有鄰接第一基材接觸表面106的接合墊104之第一基材102。可在第一基材接觸表面106之上形成介電層112，介電層112然後被產生圖案及蝕刻，而形成該等腔穴114。如前文所述，可形成該等腔穴114而使該等介於腔穴之間的壁116具有傾斜側壁122。該等介於腔穴之間的壁116亦可包含在每一鄰接的腔穴114之間形成的接觸結構142，其中該等介於腔穴之間的壁之接觸表面142可實質上在第一基材接觸表面106之平面上。
如第11圖所示，可以前文所述之一或多種方式在該等腔穴114內形成焊料結構126，其中該等焊料結構126可被完全容納在該等腔穴114內。進一步如第11圖所示，可使第一基材102之該等焊料結構126對準第二基材132上的該等接觸墊134，其中該等介於腔穴之間的壁116之該等接觸表面142接觸第二基材接觸表面136。
如第12圖所示，於執行諸如回焊或熱壓縮接合等的連接程序時，介電材料112變形，而實質上填滿該等焊料互連138與該等介於腔穴之間的壁116間之間隙152(請參閱第11圖)。在一實施例中，該等介於腔穴之間的壁116之介電材料可充分地變形，而實質上填滿該等焊料互連138與介電材料112間之間隙152(請參閱第11圖)。在另一實施例中，該等介於腔穴之間的壁116之介電材料可在該連接程序期間(例如，當加熱時)流動，而實質上 填滿該等焊料互連138與介於腔穴之間的壁116間之間隙152(請參閱第11圖)。
在第13圖所示之另一實施例中，可以此項技術中習知的任何技術在該等第二基材接觸墊134上形成焊料結構126。在該連接程序之後，可形成與第9圖或第12圖所示之結構類似的一結構。
在第14圖所示之又另一實施例中，第13圖所示之實施例可具有在第二基材接觸表面136之上沉積的諸如環氧樹脂(具有或不具有助焊劑)等的一填充材料162或一不流動的填充材料(No-Flow Underfill；簡稱NFU)、該等第二基材接觸墊134的一部分、以及該等焊料結構126。填充材料162可有助於填充介電層112與該等焊料互連138間之任何間隙152(請參閱第12圖)。
在第15圖所示之另一實施例中，可針對諸如第1-12圖所示之實施例而在第二基材接觸表面136及該等第二基材接觸墊134之上沉積填充材料162。填充材料162可填充第一基材102與第二基材132(請參閱第8圖)間之空間，或可有助於填充介電層112與焊料互連138(請參閱第9及11圖)間之任何空隙。
第16圖的流程圖300示出本發明說明的程序之實施例。如方塊310所示，可形成具有鄰接一第一基材的一接觸表面的接合墊之該第一基材。如方塊320所示，可在該等第一基材接合墊及該第一基材接觸表面之上形成一介電層。如方塊330所界定，可形成穿過該介電層之一些腔穴 ，以便露出每一第一基材接合墊的至少一部分，其中該等腔穴之側壁是傾斜的，而使該介電層的外表面上之該等腔穴之寬度大於鄰近的該等第一基材接合墊之寬度。如方塊340所界定，可形成具有鄰接一第二基材的一接觸表面的接觸墊之該第二基材。如方塊350所界定，可在該等第一基材接合墊及該等第二基材接觸墊中之至少一者上形成一些焊料結構。如方塊360所示，可自該等第一基材接合墊與該等第二基材接觸墊間之該等焊料結構形成一些焊料互連。
在第17-20圖所示之一實施例中，自第一基材102上的第一焊料結構402及第二基材132上的第二焊料結構412形成該等互連結構。如第17圖所示，係以一種前文所述之方式在一第一介電層404中的腔穴114內形成該等第一焊料結構402。請注意，該等腔穴114之該等介於腔穴之間的壁之側壁122被示出為實質上垂直於第一基材接觸表面106；然而，如前文所述，可將該等側壁形成為傾斜的。可在第二基材132的接觸表面136的該等接觸墊134上形成該等第二焊料結構412。可在第二基材接觸表面136上形成諸如一防焊層光阻材料等的一第二介電層414，而形成該等第二焊料結構412。第二介電層414可被產生圖案及蝕刻，而形成開孔416，以便露出每一第二基材接觸墊134的至少一部分。然後可以其中包括前文所述之那些技術的任何習知技術在該等開孔416中形成該等第二焊料結構412。請注意，該等開孔416之側壁418被示出 為實質上垂直於第二基材接觸表面136；然而，如前文所述，可將該等側壁形成為傾斜的。
如第18圖所示，可在第二介電層414及第二焊料結構412之上沉積一填充材料422。然後可使該等第一焊料結構402接觸其對應的第二焊料結構412，且被其中包括(但不限於)回焊或熱壓縮接合之任何習知技術相互連接，而形成第19圖所示之焊料互連420。如第20圖所示，填充材料422可流動而填滿該等焊料互連420與該第一介電層404之間的、該等焊料互連420與該第二介電層414之間的、以及該第一介電層404與該第二介電層414之間的任何空隙。
在第21及22圖所示之一實施例中，可在該等第二基材接觸墊134上形成該等第二焊料結構412，且並未使用第二介電層414(請參閱第17圖)，或已移除了第二介電層414。在該實施例中，第一介電層404之該等介於腔穴之間的壁116可具有在每一鄰近的腔穴114之間形成的接觸表面424，且如前文中以與第11圖所示之實施例有關之方式說明的，該等接觸表面424可實質上在第一基材接觸表面106之平面上。如第21圖所示，可使該等第一焊料結構402對準該等第二焊料結構412，其中該等介於腔穴之間的壁116之該等接觸表面424接觸第二基材接觸表面136。如第22圖進一步所示，可以其中包括(但不限於)回焊或熱壓縮接合之任何習知技術將該等第一焊料結構402與各對應的第二焊料結構412相互連接，而形成互連 420。應了解：如前文所述，可如第18-20圖所示，將一填充材料用來填滿空隙，且提供更堅固的封裝。
第23圖之流程圖500中示出本發明說明的程序之實施例。如方塊510所示，可形成具有鄰接一第一基材的一第一表面的接合墊之該第一基材。如方塊520所示，可在該等第一基材接合墊及該第一基材接觸表面之上形成一第一介電層。如方塊530所示，可形成穿過該第一介電層之一些腔穴，以便露出每一第一基材接合墊的至少一部分。如方塊540所示，可在該等第一基材接合墊上形成第一焊料結構。如方塊550所示，可形成具有鄰接一第二基材的一接觸表面的接觸墊之該第二基材。如方塊560所示，可在該第二基材接觸表面的該等接觸墊上形成一些第二焊料結構。如方塊570所示，可使該等第一焊料結構與該等第二焊料結構接觸且黏著在一起，而形成一些互連結構。
雖然本說明內之所述的該等實施例係有關一種第一基材及一種第二基材，但是應了解：其觀念同樣適用於任何微電子封裝程序，其中包括(但不限於)微電子晶粒被連接到基材或轉接板之第一級互連(First Level Interconnect ；簡稱FLI)、基材或轉接板被連接到板或主機板之第二級互連(Second Level Interconnect；簡稱SLI)、以及微電子晶粒被直接連接到板或主機板之直接晶片連接(Direct Chip Attach；簡稱DCA)。
已詳細說明了本發明之實施例至此，我們應可了解：後附的申請專利範圍界定之本發明不受前文說明中述及的 特定細節之限制，這是因為可在不脫離本發明之精神或範圍下作出本發明的許多顯而易見之變化。
102‧‧‧第一基材
104‧‧‧接合墊
106，136，424‧‧‧接觸表面
112‧‧‧介電層
114‧‧‧腔穴
116‧‧‧介於腔穴之間的壁
122‧‧‧傾斜側壁
118‧‧‧外表面
124‧‧‧焊料膏
126‧‧‧焊料結構
132‧‧‧第二基材
134‧‧‧接觸墊
138，420‧‧‧焊料互連
142‧‧‧接觸結構
152‧‧‧間隙
162，422‧‧‧填充材料
402‧‧‧第一焊料結構
412‧‧‧第二焊料結構
404‧‧‧第一介電層
414‧‧‧第二介電層
416‧‧‧開孔
418‧‧‧側壁
本說明書之結論部分中已特別指出且清楚地以申請專利範圍要求本發明揭示之標的。若參閱前文中之說明及後附的申請專利範圍，且配合各附圖，將對本發明揭示之前文所述的及其他的特徵有更完整的了解。應了解：該等附圖只示出根據本發明揭示之數個實施例，且該等附圖因而將不被視為對本發明範圍的限制。前文中已利用該等附圖而在額外的具體性及細節下說明了本發明之揭示，因而可更易於確定本發明揭示之之優點，在該等附圖中：
第1-4圖示出根據本發明揭示的一實施例而形成一腔穴結構的程序之側橫斷面圖。
第5圖是根據本發明揭示而形成腔穴互連結構中之焊料的程序之流程圖。
第6-9圖示出根據本發明揭示的一實施例而形成腔穴互連結構中之焊料的程序之側橫斷面圖。
第10-12圖示出根據本發明揭示的另一實施例而形成腔穴互連結構中之焊料的程序之側橫斷面圖。
第13圖示出根據本發明揭示而形成腔穴互連結構中之焊料的又一實施例之側橫斷面圖。
第14圖示出根據本發明揭示而利用一填充材料形成腔穴互連結構中之焊料的實施例之側橫斷面圖。
第15圖示出根據本發明揭示而利用一填充材料形成腔穴互連結構中之焊料的另一實施例之側橫斷面圖。
第16圖是根據本發明揭示而形成腔穴互連結構中之焊料的程序之流程圖。
第17-20圖示出根據本發明揭示的又一實施例而形成腔穴互連結構中之焊料的程序之側橫斷面圖。
第21及22圖示出根據本發明揭示的再又另一實施例而形成腔穴互連結構中之焊料的程序之側橫斷面圖。
第23圖是根據本發明揭示的一實施例而形成腔穴互連結構中之焊料的程序之流程圖。
102‧‧‧第一基材
104‧‧‧接合墊
106，136‧‧‧接觸表面
114‧‧‧腔穴
116‧‧‧介於腔穴之間的壁
122‧‧‧傾斜側壁
126‧‧‧焊料結構
132‧‧‧第二基材
134‧‧‧接觸墊

Claims (30)

  1. 一種製造微電子封裝之方法，包含：形成一第一基材，該第一基材具有鄰接該第一基材的一接觸表面之複數個接合墊；在該等第一基材接合墊及該第一基材接觸表面之上形成一第一介電層；形成穿過該第一介電層而延伸之複數個腔穴，以便露出每一第一基材接合墊的至少一部分，其中該第一介電層之至少一介於腔穴之間的壁具有位於各鄰接腔穴之傾斜側壁；形成一第二基材，該第二基材具有鄰接該第二基材的一接觸表面之複數個接觸墊；在該複數個第一基材接合墊中之一第一基材接合墊或該複數個第二基材接觸墊中之一第二基材接觸墊上形成至少一焊料結構；以及自該複數個第一基材接合墊中之至少一第一基材接合墊與該複數個第二基材接觸墊中之至少一第二基材接觸墊間之該至少一焊料結構形成至少一焊料互連。
  2. 如申請專利範圍第1項之方法，其中形成該複數個腔穴包含形成複數個實質上為圓錐形的腔穴。
  3. 如申請專利範圍第1項之方法，其中形成該複數個腔穴包含形成該複數個腔穴，其中該第一介電層之介於腔穴之間的壁具有與該第一基材第一表面的垂直面成大約10度至60度之間的角度之一些傾斜側壁。
  4. 如申請專利範圍第1項之方法，其中形成複數個腔穴包含：使該介電層曝光，而形成所需的圖案；將該基材放置在一被加熱的表面，而執行一曝後烤；以及硬化及移除該介電層的一部分，以便形成該複數個腔穴，而完成該介電層顯影。
  5. 如申請專利範圍第1項之方法，其中形成一第一介電層包含形成保留在該第一基材與該第二基材間之一第一介電層，作為該微電子封裝的一部分。
  6. 如申請專利範圍第1項之方法，其中形成至少一焊料結構包含在該複數個腔穴中之至少一腔穴內部屬一焊料膏，且將該焊料膏加熱。
  7. 如申請專利範圍第1項之方法，其中形成該至少一焊料互連包含使該至少一焊料結構回焊。
  8. 如申請專利範圍第1項之方法，其中形成該至少一焊料互連包含熱壓縮接合位於該第一基材接合墊與該第二基材接觸墊間之該至少一焊料結構。
  9. 如申請專利範圍第1項之方法，進一步包含在該第一基材與該第二基材之間部屬一填充材料。
  10. 如申請專利範圍第1項之方法，其中該等介於腔穴之間的壁中之至少一介於腔穴之間的壁包含在每一鄰接腔穴之間形成的至少一接觸結構，該至少一接觸結構實質上在該第一基材接觸表面之平面上，且其中形成該至少一 焊料互連包含使該至少一介於腔穴之間的壁接觸表面接觸該第二基材接觸表面。
  11. 如申請專利範圍第10項之方法，其中形成一第一介電層包含形成一可變形的第一介電層。
  12. 如申請專利範圍第11項之方法，其中形成該至少一焊料互連進一步包含使該可變形的第一介電層變形，以實質上填滿該至少一焊料互連與該第一介電層間之空隙。
  13. 一種製造微電子封裝之方法，包含：形成一第一基材，該第一基材具有鄰接該第一基材的一接觸表面之複數個接合墊；在該等第一基材接合墊及該第一基材接觸表面之上形成一第一介電層；形成穿過該第一介電層之至少一腔穴，以便露出每一第一基材接合墊的至少一部分；在該複數個第一基材接合墊中之至少一第一基材接合墊上形成至少一第一焊料結構；形成一第二基材，該第二基材具有鄰接該第二基材的一接觸表面之複數個接觸墊；在該複數個第二基材接觸墊中之至少一第二基材接觸墊上形成至少一第二焊料結構；以及將該至少一第一焊料結構黏著到該至少一第二焊料結構，而形成一互連結構。
  14. 如申請專利範圍第13項之方法，其中形成至少一腔穴包含形成穿過該第一介電層而延伸之複數個腔穴，以 便露出每一第一基材接合墊的至少一部分，其中形成該複數個腔穴形成位於各鄰接腔穴間之該第一介電層的至少一介於腔穴之間的壁，且其中該至少一介於腔穴之間的壁包含在每一鄰接腔穴之間形成的至少一接觸結構，該至少一接觸結構實質上在該第一基材接觸表面之平面上。
  15. 如申請專利範圍第14項之方法，其中形成該至少一焊料互連進一步包含使該至少一介於腔穴之間的壁接觸表面接觸該第二基材接觸表面。
  16. 如申請專利範圍第13項之方法，進一步包含在該第一基材與該第二基材之間部屬一填充材料。
  17. 如申請專利範圍第13項之方法，進一步包含在該第二基材接觸表面上且鄰接該至少一第二焊料結構處形成一第二介電層。
  18. 如申請專利範圍第17項之方法，進一步包含在該第一介電層與該第二介電層之間部屬一填充材料。
  19. 如申請專利範圍第13項之方法，其中形成至少一腔穴包含形成穿過該第一介電層而延伸之複數個腔穴，以便露出該複數個第一基材接合墊中之每一第一基材接合墊的至少一部分，其中形成該複數個腔穴形成位於各鄰接腔穴間之該第一介電層的至少一介於腔穴之間的壁，且該第一介電層之該至少一介於腔穴之間的壁具有傾斜側壁。
  20. 如申請專利範圍第13項之方法，其中形成至少一腔穴包含形成至少一實質上為圓錐形的腔穴。
  21. 如申請專利範圍第13項之方法，其中形成至少一 第一焊料結構包含在該複數個腔穴中之至少一腔穴內部屬一焊料膏，且將該焊料膏加熱。
  22. 如申請專利範圍第13項之方法，進一步包含在該第一基材與該第二基材之間部屬一填充材料。
  23. 一種微電子裝置，包含：一第一基材，該第一基材具有鄰接該第一基材的一接觸表面之複數個接合墊；被部屬在該複數個第一基材接合墊及該第一基材接觸表面之上的一第一介電層，其中該第一介電層具有穿過該第一介電層而延伸到該複數個第一基材接合墊中之每一第一基材接合墊的複數個個腔穴，其中該第一介電層之各介於腔穴之間的壁位於各鄰接腔穴之間，且其中該等介於腔穴之間的壁具有傾斜側壁；一第二基材，該第二基材具有鄰接該第二基材的一接觸表面之複數個接觸墊；以及介於該複數個第一基材接合墊與對應的該複數個第二基材接觸墊間之焊料互連。
  24. 如申請專利範圍第23項之微電子裝置，其中該複數個腔穴是實質上為圓錐形的。
  25. 如申請專利範圍第23項之微電子裝置，進一步包含介於該第一基材與該第二基材間之一填充材料。
  26. 如申請專利範圍第23項之微電子裝置，其中該等介於腔穴之間的壁包含在每一鄰接腔穴之間形成的接觸結構，且其中該等介於腔穴之間的壁接觸表面實質上在該第 一基材接觸表面之平面上。
  27. 如申請專利範圍第26項之微電子裝置，其中該等介於腔穴之間的壁接觸結構接觸該第二基材接觸表面。
  28. 如申請專利範圍第26項之微電子裝置，其中該等介於腔穴之間的壁是可變形的。
  29. 一種微電子裝置，包含：一第一基材，該第一基材具有鄰接該第一基材的一第一表面之複數個接合墊；被部屬在該等第一基材接合墊及該第一基材接觸表面之上的一第一介電層，該第一介電層具有穿過該第一介電層而延伸到對應的接合墊之複數個腔穴，其中該第一介電層之各介於腔穴之間的壁位於該等腔穴之間，且其中該等介於腔穴之間的壁具有傾斜側壁；一第二基材，該第二基材具有鄰接該第二基材的一接觸表面之複數個接觸墊；在該第二基材表面上且鄰接該複數個第二基材接觸墊之一第二介電層；以及介於該等第一基材接合墊與該等第二基材接觸墊間之一焊料互連。
  30. 如申請專利範圍第29項之微電子裝置，進一步包含在該第一介電層與該第二介電層之間部屬一填充材料。
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