TW201242002A - Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus - Google Patents
Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus Download PDFInfo
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- TW201242002A TW201242002A TW101107049A TW101107049A TW201242002A TW 201242002 A TW201242002 A TW 201242002A TW 101107049 A TW101107049 A TW 101107049A TW 101107049 A TW101107049 A TW 101107049A TW 201242002 A TW201242002 A TW 201242002A
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011055630A JP2012191136A (ja) | 2011-03-14 | 2011-03-14 | 固体撮像装置、固体撮像装置の製造方法、電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201242002A true TW201242002A (en) | 2012-10-16 |
Family
ID=46815044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101107049A TW201242002A (en) | 2011-03-14 | 2012-03-02 | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8853758B2 (enExample) |
| JP (1) | JP2012191136A (enExample) |
| CN (1) | CN102683365A (enExample) |
| TW (1) | TW201242002A (enExample) |
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| TWI745430B (zh) * | 2017-06-27 | 2021-11-11 | 台灣積體電路製造股份有限公司 | 光感測裝置及其製造方法 |
| US11930287B2 (en) | 2019-05-10 | 2024-03-12 | Sony Semiconductor Solutions Corporation | Imaging element and electronic device |
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| US8324701B2 (en) * | 2010-07-16 | 2012-12-04 | Visera Technologies Company Limited | Image sensors |
| US9105546B2 (en) * | 2012-09-19 | 2015-08-11 | Semiconductor Components Industries, Llc | Imaging systems with backside illuminated near infrared imaging pixels |
| JP2014093482A (ja) * | 2012-11-06 | 2014-05-19 | Toshiba Corp | 固体撮像装置の製造方法および固体撮像装置 |
| JP6103947B2 (ja) * | 2013-01-16 | 2017-03-29 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
| US9502453B2 (en) * | 2013-03-14 | 2016-11-22 | Visera Technologies Company Limited | Solid-state imaging devices |
| JP2014183064A (ja) * | 2013-03-18 | 2014-09-29 | Sony Corp | 固体撮像素子および製造方法、並びに電子機器 |
| US20140339606A1 (en) * | 2013-05-16 | 2014-11-20 | Visera Technologies Company Limited | Bsi cmos image sensor |
| JP2015012126A (ja) * | 2013-06-28 | 2015-01-19 | ソニー株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
| JP6303803B2 (ja) | 2013-07-03 | 2018-04-04 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
| JP6060851B2 (ja) * | 2013-08-09 | 2017-01-18 | ソニー株式会社 | 固体撮像装置の製造方法 |
| US9064989B2 (en) * | 2013-08-30 | 2015-06-23 | Taiwan Semiconductor Manufacturing Company Limited | Photo diode and method of forming the same |
| US9543343B2 (en) | 2013-11-29 | 2017-01-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms for forming image sensor device |
| JP6233188B2 (ja) * | 2013-12-12 | 2017-11-22 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
| US10680022B2 (en) | 2013-12-12 | 2020-06-09 | Sony Corporation | Solid state imaging device, manufacturing method of the same, and electronic equipment |
| US9412775B2 (en) * | 2014-03-20 | 2016-08-09 | Visera Technologies Company Limited | Solid-state imaging devices and methods of fabricating the same |
| CN106463080B (zh) * | 2014-06-13 | 2019-08-20 | 株式会社半导体能源研究所 | 显示装置 |
| CN106796942A (zh) * | 2014-10-03 | 2017-05-31 | 索尼半导体解决方案公司 | 固态成像元件、制造方法和电子设备 |
| US9825078B2 (en) | 2014-11-13 | 2017-11-21 | Visera Technologies Company Limited | Camera device having an image sensor comprising a conductive layer and a reflection layer stacked together to form a light pipe structure accommodating a filter unit |
| JP2016152322A (ja) * | 2015-02-18 | 2016-08-22 | 株式会社東芝 | 固体撮像装置 |
| US20160307942A1 (en) * | 2015-04-16 | 2016-10-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deeply buried color filter array (cfa) by stacked grid structure |
| US10559616B2 (en) * | 2015-07-30 | 2020-02-11 | Sony Semiconductor Solutions Corporation | Solid-state imaging apparatus and electronic device |
| CN107039468B (zh) * | 2015-08-06 | 2020-10-23 | 联华电子股份有限公司 | 影像感测器及其制作方法 |
| JP6728820B2 (ja) * | 2016-03-18 | 2020-07-22 | 凸版印刷株式会社 | 固体撮像装置及びその製造方法 |
| CN115763507B (zh) | 2016-10-28 | 2025-06-17 | 索尼公司 | 光检测装置和电子装置 |
| US11037972B2 (en) * | 2016-11-02 | 2021-06-15 | Sony Semiconductor Solutions Corporation | Imaging device, imaging apparatus, and electronic device |
| US9991302B1 (en) * | 2016-11-17 | 2018-06-05 | Visera Technologies Company Limited | Optical sensor with color filters having inclined sidewalls |
| JP2018186151A (ja) | 2017-04-25 | 2018-11-22 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
| JP2018200909A (ja) * | 2017-05-25 | 2018-12-20 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
| KR102490821B1 (ko) * | 2018-01-23 | 2023-01-19 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| US10665627B2 (en) | 2017-11-15 | 2020-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method for forming the image sensor device having a first lens and a second lens over the first lens |
| CN107978613A (zh) * | 2017-12-15 | 2018-05-01 | 中芯集成电路（宁波）有限公司 | 半导体感光器件及其感光表面处理方法 |
| WO2019220861A1 (ja) * | 2018-05-16 | 2019-11-21 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および固体撮像素子の製造方法 |
| JP2022017616A (ja) * | 2018-11-09 | 2022-01-26 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、固体撮像装置の製造方法および電子機器 |
| TWI717868B (zh) * | 2019-01-11 | 2021-02-01 | 財團法人工業技術研究院 | 成像模組與使用其之生物辨識裝置 |
| CN111435213B (zh) | 2019-01-11 | 2021-12-31 | 财团法人工业技术研究院 | 成像模块与使用其的生物识别装置 |
| WO2020150166A1 (en) * | 2019-01-16 | 2020-07-23 | Crown Electrokinetics Corp. | Applications of an electrokinetic device for an imaging system |
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| KR102749135B1 (ko) * | 2019-03-06 | 2025-01-03 | 삼성전자주식회사 | 이미지 센서 및 이미징 장치 |
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| JPWO2022064853A1 (enExample) * | 2020-09-25 | 2022-03-31 | ||
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| JP3050583B2 (ja) | 1990-10-17 | 2000-06-12 | ソニー株式会社 | 固体撮像装置 |
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| JP2002314058A (ja) | 2001-04-17 | 2002-10-25 | Sony Corp | 固体撮像素子およびその製造方法 |
| JP4534634B2 (ja) | 2004-07-05 | 2010-09-01 | ソニー株式会社 | 固体撮像装置 |
| US7598581B2 (en) * | 2005-09-12 | 2009-10-06 | Crosstek Capital, LLC | Image sensor with decreased optical interference between adjacent pixels |
| KR100712347B1 (ko) * | 2005-09-12 | 2007-05-02 | 매그나칩 반도체 유한회사 | 광 간섭을 감소시킨 이미지센서 |
| JP4992446B2 (ja) * | 2006-02-24 | 2012-08-08 | ソニー株式会社 | 固体撮像装置及びその製造方法、並びにカメラ |
| JP2008052004A (ja) * | 2006-08-24 | 2008-03-06 | Sony Corp | レンズアレイ及び固体撮像素子の製造方法 |
| JP5162976B2 (ja) * | 2007-06-25 | 2013-03-13 | 凸版印刷株式会社 | オンチップカラーフィルタ用フォトマスク及びそれを用いたオンチップカラーフィルタの製造方法 |
| JP2009021415A (ja) * | 2007-07-12 | 2009-01-29 | Panasonic Corp | 固体撮像装置およびその製造方法 |
| JP2010034426A (ja) * | 2008-07-31 | 2010-02-12 | Panasonic Corp | 固体撮像装置およびその製造方法ならびにカメラ |
| JP2010239076A (ja) * | 2009-03-31 | 2010-10-21 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
| JP2010258157A (ja) * | 2009-04-23 | 2010-11-11 | Panasonic Corp | 固体撮像装置およびその製造方法 |
| JP2012054321A (ja) * | 2010-08-31 | 2012-03-15 | Sony Corp | 固体撮像素子及びその製造方法、並びに固体撮像装置及び撮像装置 |
| JP2012074521A (ja) * | 2010-09-28 | 2012-04-12 | Sony Corp | 固体撮像装置の製造方法、固体撮像装置、および電子機器 |
| US8767108B2 (en) * | 2011-03-14 | 2014-07-01 | Sony Corporation | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus |
-
2011
- 2011-03-14 JP JP2011055630A patent/JP2012191136A/ja active Pending
-
2012
- 2012-03-02 TW TW101107049A patent/TW201242002A/zh unknown
- 2012-03-06 US US13/412,748 patent/US8853758B2/en not_active Expired - Fee Related
- 2012-03-07 CN CN2012100581693A patent/CN102683365A/zh active Pending
-
2014
- 2014-08-28 US US14/472,069 patent/US20140367821A1/en not_active Abandoned
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI745430B (zh) * | 2017-06-27 | 2021-11-11 | 台灣積體電路製造股份有限公司 | 光感測裝置及其製造方法 |
| US11930287B2 (en) | 2019-05-10 | 2024-03-12 | Sony Semiconductor Solutions Corporation | Imaging element and electronic device |
| TWI853915B (zh) * | 2019-05-10 | 2024-09-01 | 日商索尼半導體解決方案公司 | 攝像元件及電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8853758B2 (en) | 2014-10-07 |
| US20120235266A1 (en) | 2012-09-20 |
| US20140367821A1 (en) | 2014-12-18 |
| JP2012191136A (ja) | 2012-10-04 |
| CN102683365A (zh) | 2012-09-19 |
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