JP2012191136A - 固体撮像装置、固体撮像装置の製造方法、電子機器 - Google Patents

固体撮像装置、固体撮像装置の製造方法、電子機器 Download PDF

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Publication number
JP2012191136A
JP2012191136A JP2011055630A JP2011055630A JP2012191136A JP 2012191136 A JP2012191136 A JP 2012191136A JP 2011055630 A JP2011055630 A JP 2011055630A JP 2011055630 A JP2011055630 A JP 2011055630A JP 2012191136 A JP2012191136 A JP 2012191136A
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Japan
Prior art keywords
color filter
light
light shielding
pixel
solid
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Pending
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JP2011055630A
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English (en)
Japanese (ja)
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JP2012191136A5 (enExample
Inventor
Yoichi Otsuka
洋一 大塚
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011055630A priority Critical patent/JP2012191136A/ja
Priority to TW101107049A priority patent/TW201242002A/zh
Priority to US13/412,748 priority patent/US8853758B2/en
Priority to CN2012100581693A priority patent/CN102683365A/zh
Publication of JP2012191136A publication Critical patent/JP2012191136A/ja
Publication of JP2012191136A5 publication Critical patent/JP2012191136A5/ja
Priority to US14/472,069 priority patent/US20140367821A1/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2011055630A 2011-03-14 2011-03-14 固体撮像装置、固体撮像装置の製造方法、電子機器 Pending JP2012191136A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011055630A JP2012191136A (ja) 2011-03-14 2011-03-14 固体撮像装置、固体撮像装置の製造方法、電子機器
TW101107049A TW201242002A (en) 2011-03-14 2012-03-02 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
US13/412,748 US8853758B2 (en) 2011-03-14 2012-03-06 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
CN2012100581693A CN102683365A (zh) 2011-03-14 2012-03-07 固态摄像装置、制造固态摄像装置的方法以及电子设备
US14/472,069 US20140367821A1 (en) 2011-03-14 2014-08-28 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011055630A JP2012191136A (ja) 2011-03-14 2011-03-14 固体撮像装置、固体撮像装置の製造方法、電子機器

Publications (2)

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JP2012191136A true JP2012191136A (ja) 2012-10-04
JP2012191136A5 JP2012191136A5 (enExample) 2014-03-27

Family

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JP2011055630A Pending JP2012191136A (ja) 2011-03-14 2011-03-14 固体撮像装置、固体撮像装置の製造方法、電子機器

Country Status (4)

Country Link
US (2) US8853758B2 (enExample)
JP (1) JP2012191136A (enExample)
CN (1) CN102683365A (enExample)
TW (1) TW201242002A (enExample)

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JP2014138071A (ja) * 2013-01-16 2014-07-28 Canon Inc 固体撮像装置及びその製造方法
JP2014179577A (ja) * 2013-03-14 2014-09-25 Visera Technologies Company Ltd 固体撮像素子
JP2014225667A (ja) * 2013-05-16 2014-12-04 采▲ぎょく▼科技股▲ふん▼有限公司ＶｉｓＥｒａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ Ｂｓｉ型ｃｍｏｓイメージセンサ
JP2015035555A (ja) * 2013-08-09 2015-02-19 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JPWO2016052249A1 (ja) * 2014-10-03 2017-07-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および製造方法、並びに電子機器
JP2017168757A (ja) * 2016-03-18 2017-09-21 凸版印刷株式会社 固体撮像装置及びその製造方法
WO2018198886A1 (ja) * 2017-04-25 2018-11-01 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
WO2018216444A1 (ja) * 2017-05-25 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
WO2022269997A1 (ja) * 2021-06-23 2022-12-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器

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JP2014183064A (ja) * 2013-03-18 2014-09-29 Sony Corp 固体撮像素子および製造方法、並びに電子機器
JP2015012126A (ja) * 2013-06-28 2015-01-19 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器
JP6303803B2 (ja) 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
US9064989B2 (en) * 2013-08-30 2015-06-23 Taiwan Semiconductor Manufacturing Company Limited Photo diode and method of forming the same
US9543343B2 (en) 2013-11-29 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for forming image sensor device
JP6233188B2 (ja) * 2013-12-12 2017-11-22 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
US10680022B2 (en) 2013-12-12 2020-06-09 Sony Corporation Solid state imaging device, manufacturing method of the same, and electronic equipment
US9412775B2 (en) * 2014-03-20 2016-08-09 Visera Technologies Company Limited Solid-state imaging devices and methods of fabricating the same
CN106463080B (zh) * 2014-06-13 2019-08-20 株式会社半导体能源研究所 显示装置
US9825078B2 (en) 2014-11-13 2017-11-21 Visera Technologies Company Limited Camera device having an image sensor comprising a conductive layer and a reflection layer stacked together to form a light pipe structure accommodating a filter unit
JP2016152322A (ja) * 2015-02-18 2016-08-22 株式会社東芝 固体撮像装置
US20160307942A1 (en) * 2015-04-16 2016-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Deeply buried color filter array (cfa) by stacked grid structure
US10559616B2 (en) * 2015-07-30 2020-02-11 Sony Semiconductor Solutions Corporation Solid-state imaging apparatus and electronic device
CN107039468B (zh) * 2015-08-06 2020-10-23 联华电子股份有限公司 影像感测器及其制作方法
CN115763507B (zh) 2016-10-28 2025-06-17 索尼公司 光检测装置和电子装置
US11037972B2 (en) * 2016-11-02 2021-06-15 Sony Semiconductor Solutions Corporation Imaging device, imaging apparatus, and electronic device
US9991302B1 (en) * 2016-11-17 2018-06-05 Visera Technologies Company Limited Optical sensor with color filters having inclined sidewalls
US10269844B2 (en) * 2017-06-27 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of light sensing device
KR102490821B1 (ko) * 2018-01-23 2023-01-19 삼성전자주식회사 이미지 센서 및 그 제조 방법
US10665627B2 (en) 2017-11-15 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method for forming the image sensor device having a first lens and a second lens over the first lens
CN107978613A (zh) * 2017-12-15 2018-05-01 中芯集成电路（宁波）有限公司 半导体感光器件及其感光表面处理方法
WO2019220861A1 (ja) * 2018-05-16 2019-11-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法
JP2022017616A (ja) * 2018-11-09 2022-01-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
TWI717868B (zh) * 2019-01-11 2021-02-01 財團法人工業技術研究院 成像模組與使用其之生物辨識裝置
CN111435213B (zh) 2019-01-11 2021-12-31 财团法人工业技术研究院 成像模块与使用其的生物识别装置
WO2020150166A1 (en) * 2019-01-16 2020-07-23 Crown Electrokinetics Corp. Applications of an electrokinetic device for an imaging system
US12183755B2 (en) 2019-01-31 2024-12-31 Sony Semiconductor Solutions Corporation Imaging device and electronic apparatus
TWI842804B (zh) * 2019-02-01 2024-05-21 日商索尼半導體解決方案公司 受光元件、固體攝像裝置及測距裝置
KR102749135B1 (ko) * 2019-03-06 2025-01-03 삼성전자주식회사 이미지 센서 및 이미징 장치
TWI853915B (zh) 2019-05-10 2024-09-01 日商索尼半導體解決方案公司 攝像元件及電子機器
US11158661B2 (en) * 2019-09-19 2021-10-26 Omnivision Technologies, Inc. Image sensor with micro-structured color filter
CN111261649B (zh) * 2020-01-21 2024-04-02 上海奕瑞光电子科技股份有限公司 一种图像探测器
JP7491029B2 (ja) * 2020-04-07 2024-05-28 セイコーエプソン株式会社 電気光学装置および電子機器
US11569285B2 (en) 2020-05-12 2023-01-31 Visera Technologies Company Limited Solid-state imaging device having a waveguide partition grid with variable grid widths
CN111741239B (zh) * 2020-06-29 2022-04-12 深圳市汇顶科技股份有限公司 图像传感器和电子设备
JPWO2022064853A1 (enExample) * 2020-09-25 2022-03-31
CN120769579A (zh) * 2025-09-08 2025-10-10 格科微电子（上海）有限公司 一种光学传感器的滤光器及其形成方法

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JP2014138071A (ja) * 2013-01-16 2014-07-28 Canon Inc 固体撮像装置及びその製造方法
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JP2015035555A (ja) * 2013-08-09 2015-02-19 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JPWO2016052249A1 (ja) * 2014-10-03 2017-07-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および製造方法、並びに電子機器
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WO2018216444A1 (ja) * 2017-05-25 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
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WO2022269997A1 (ja) * 2021-06-23 2022-12-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器

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Publication number Publication date
US8853758B2 (en) 2014-10-07
US20120235266A1 (en) 2012-09-20
US20140367821A1 (en) 2014-12-18
TW201242002A (en) 2012-10-16
CN102683365A (zh) 2012-09-19

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