201219585 六、發明說明： 【發明所屬之技術領域】 本發明是關於用來製作例如有機EL顯示器、有機EL 照明元件等之蒸鍍技術。 【先前技術】 第13圖係顯示習知蒸鍍裝置的槪略構造圖。 如第13圖所示，在習知之群集型（cluster type)的蒸 鍍裝置101，是從真空搬運單元104將基板110搬入真空槽 102內，藉由對準機構105進行基板110與遮罩機構111的對 準，然後讓蒸發源109朝水平方向移動，藉此在基板1 10上 進行蒸鍍。201219585 VI. Description of the Invention: [Technical Field] The present invention relates to an evaporation technique for producing, for example, an organic EL display, an organic EL illumination element, or the like. [Prior Art] Fig. 13 is a schematic structural view showing a conventional vapor deposition device. As shown in Fig. 13, in the conventional cluster type vapor deposition device 101, the substrate 110 is carried into the vacuum chamber 102 from the vacuum transfer unit 104, and the substrate 110 and the mask mechanism are performed by the alignment mechanism 105. The alignment of 111 is performed, and then the evaporation source 109 is moved in the horizontal direction, whereby evaporation is performed on the substrate 110.
但是，這樣的蒸鍍裝置101，特別是用來製造有機EL 裝置之蒸鍍裝置，由於必須精密地控制蒸鍍速率，在對準 等的製程間之等待時間之間無法實施降低蒸鍍速率等的控 制’而必須以一定的蒸鍍速率持續釋出蒸氣。 結果’習知技術會發生蒸發材料的浪費。 特別是近年要求縮短生產節拍時間（tact time)，因 此蒸鍍速率有變大的傾向，而導致所浪費的蒸發材料增加 〇 [專利文獻1]日本特開2004-79904號公報 【發明內容】 本發明是爲了解決上述習知技術的課題而開發完成的 -5- 201219585 ，其目的是爲了提供：可減少蒸鍍時的等待時間所造成的 蒸發材料浪費之技術。 爲了達成上述目的，本發明之蒸鍍裝置，係具備：可 將複數個基板搬入或搬出之真空槽、設置於前述真空槽內 之基板搬入搬出區域、設置於前述真空槽內之蒸鍍區域、 設置於前述真空槽內之待機區域、第1搬運機構、以及複 數個第2搬運機構；在該基板搬入搬出區域，讓被搬入的 基板和遮罩合體，且讓蒸鍍結束後的基板和遮罩分離而將 該基板朝該真空槽外搬出；在該蒸鍍區域，是在合體後的 該基板上透過該遮罩進行蒸鍍；在該待機區域，是讓合體 後的該基板及該遮罩待機； 該第1搬運機構，是將合體後的該基板及該遮罩，在 位於前述基板搬入搬出區域及前述待機區域間之蒸鍍開始 位置、和前述蒸鍍區域之間進行搬運；該複數個第2搬運 機構，是將合體後之複數個該基板及該遮罩，在前述基板 搬入搬出區域和前述蒸鍍開始位置之間、以及該蒸鍍開始 位置和前述待機區域之間分別進行搬運；前述待機區域， 是設置在相對於前述第1搬運機構不重疊的位置。 在本發明，當在前述基板搬入搬出區域設置讓被搬入 的基板與遮罩對準之對準區域的情況，也能發揮其效果。 在本發明，當前述待機區域設置在前述第1搬運機構 下方的情況，也能發揮其效果。 在本發明，當前述基板搬入搬出區域設置在前述第1 . 搬運機構上方的情況，也能發揮其效果。However, in such a vapor deposition device 101, in particular, a vapor deposition device for manufacturing an organic EL device, since it is necessary to precisely control the vapor deposition rate, it is impossible to reduce the vapor deposition rate between waiting times between processes such as alignment. The control 'has to continue to release vapor at a certain rate of evaporation. As a result, the conventional technology causes waste of evaporation materials. In particular, in recent years, it is required to shorten the tact time, and the vapor deposition rate tends to become large, and the wasted evaporation material is increased. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2004-79904 [Abstract] The present invention has been developed in order to solve the above problems of the prior art, and its purpose is to provide a technique for reducing waste of evaporation material caused by waiting time during vapor deposition. In order to achieve the above object, the vapor deposition device of the present invention includes a vacuum chamber in which a plurality of substrates can be carried in or out, a substrate loading/unloading region provided in the vacuum chamber, and a vapor deposition region provided in the vacuum chamber. a standby area provided in the vacuum chamber, a first conveyance mechanism, and a plurality of second conveyance mechanisms; and the substrate and the cover that are carried in the substrate are carried in and out, and the substrate and the cover after the vapor deposition are completed The cover is separated to carry the substrate out of the vacuum chamber; in the vapor deposition region, the substrate is vapor-deposited through the mask; and in the standby region, the substrate and the cover are combined The first transport mechanism is configured to transport the combined substrate and the mask between a vapor deposition start position between the substrate loading/unloading region and the standby region and the vapor deposition region; The plurality of second transport mechanisms are a plurality of the substrates and the mask after the combination, and between the substrate loading/unloading region and the vapor deposition start position, and the vapor deposition Respectively between the start position and the standby transfer region; the standby region, is disposed at a position not overlapped with the first conveyance means for the foregoing. In the present invention, it is also possible to provide an effect in the case where an alignment area for aligning the carried substrate with the mask is provided in the substrate loading/unloading area. In the present invention, even when the standby area is disposed below the first transport mechanism, the effect can be exhibited. In the present invention, even when the substrate loading/unloading area is provided above the first conveying mechanism, the effect can be exhibited.
S -6- 201219585 在本發明，當在前述待機區域設置用來將前述基板冷 、 卻之冷卻手段的情況，也能發揮其效果。 在本發明，當前述第1搬運機構具有：支承前述基板 及前述遮罩並沿水平方向進行搬運之複數個滾子；且前述 第2搬運機構具有：設置在前述第1搬運機構之複數個滾子 間，支承前述基板及前述遮罩並沿鉛直方向進行搬運之複 數個銷狀的基板昇降構件，在此情況也能發揮其效果。 在本發明，當前述第1搬運機構的滾子，是在前述真 空槽的兩側之內側壁部設置成在水平方向可伸縮自如的情 況，也能發揮其效果。 在本發明，當前述第2搬運機構的基板昇降構件具有 朝水平方向延伸之支承部，且該支承部在水平方向能以既 定的角度旋轉的情況，也能發揮其效果。 另一方面，本發明之蒸鍍方法，是使用上述任一個蒸 鍍裝置之蒸鍍方法，係具備以下步驟：在前述真空槽的基 板搬入搬出區域，讓被搬入前述真空槽內之第1基板與第1 遮罩合體的步驟；將合體後之該第1基板及該第1遮罩藉由 前述第1搬運機構搬運至前述蒸鍍區域，透過該第1遮罩對 該第1基板進行蒸鍍的步驟；在前述基板搬入搬出區域， 讓被搬入前述真空槽內之第2基板與第2遮罩合體後，配置 於前述待機區域的步驟：將蒸鍍結束後之前述第1基板及 前述第1遮罩藉由前述第1搬運機構搬運至前述基板搬入搬 出區域，從該第1遮罩將該第1基板分離並朝該真空槽外搬 出的步驟；將前述第2基板及前述第2遮罩藉由前述第1搬 201219585 運機構搬運至前述蒸鍍區域而在該第2基板及該第2遮罩上 進行蒸鍍的步驟；以及將蒸鍍結束後之前述第2基板及前 述第2遮罩藉由前述第1搬運機構搬運至前述基板搬入搬出 區域，從該第2遮罩將該第2基板分離而朝該真空槽外搬出 的步驟：而且將前述各步驟連續地反覆進行。 在本發明的情況，是在真空槽內設有基板搬入搬出區 域、待機區域、以及蒸鍍區域，將合體之基板及遮罩在基 板搬入搬出區域及待機區域間之蒸鍍開始位置、和蒸鍍區 域之間藉由第1搬運機構進行搬運；另一方面，將合體後 之複數個基板及遮罩，在基板搬入搬出區域和蒸鍍開始位 置之間以及蒸鍍開始位置和待機區域之間，藉由複數個第 2搬運機構進行搬運，再者，將待機區域設置在相對於第1 搬運機構例如上下方向不重疊的位置。因此，當合體後之 複數個基板及遮罩當中之既定的基板及遮罩，在藉由既定 的第2搬運機構搬運至待機區域而進行待機的期間，其他 的基板及遮罩，可藉由其他的第2搬運機構搬運至蒸鑛開 始位置，並藉由第1搬運機構搬運至蒸鍍區域進行蒸鍍。 而且，可將蒸鍍結束後的基板朝真空槽外搬出，並將在待 機區域進行待機之其他基板及遮罩配置於蒸鍍開始位置。 如此般’在本發明，可對複數個基板同時進行搬運及 蒸鍍’相較於習知技術，可儘量縮短基板搬運的等待時間 而減少蒸發材料的浪費。 此外’在本發明，在真·空槽內能使基板及遮罩的順序 相反’因此可儘量縮短成膜的等待時間而減少蒸發材料的 -8- 201219585 浪費。 在本發明，當在待機區域設有用來冷卻遮罩之冷卻手 段的情況，由於可抑制遮罩的溫度上昇’能防止遮罩膨脹 而進行更精密的遮罩蒸鍍。 在本發明，當在基板搬入搬出區域設有讓被搬入的基 板與遮罩進行對準之對準區域的情況，由於能一邊進行基 板與遮罩的對準一邊進行蒸鍍，能縮短製造全體的生產節 拍時間，藉此可進一步減少蒸發材料的浪費。 在本發明，當第1搬運機構具有：支承基板及遮罩並 沿水平方向進行搬運之複數個滾子，式第2搬運機構具有 :設置在第1搬運機構之複數個滾子間，支承基板及遮罩 並沿鉛直方向進行搬運之複數個銷狀的基板昇降構件的情 況；當第1搬運機構的滚子在真空槽的兩側之內側壁部設 置成在水平方向可伸縮自如的情況；或第2搬運機構的基 板昇降構件具有朝水平方向延伸的支承部，且該支承部在 水平方向能以既定角度旋轉的情況；不須使用機器人等複 雜的基板搬運機構，即可滑順地進行：將合體後的基板及 遮罩從第1搬運機構交接至第2搬運機構、或從第2搬運機 構交接至第1搬運機構的動作。 依據本發明，在製造例如有機EL元件的裝置，可減少 蒸鍍時的等待時間所造成之蒸發材料的浪費。 【實施方式】 以下，參照圖式說明本發明的實施方式。 -9 - 201219585 第1(a)圖係示意顯示本發明的蒸鍍裝置之實施方式 的說明圖、第1 (b)圖係顯示該蒸鍍裝置的內部構造之槪 略圖。 第2 ( a )〜（c )圖係顯示本實施形態的基板搬運機構 及基板昇降機構的構造，第2(a)圖爲前視圖，第2(b) 圖爲側視圖，第2 ( c )圖爲俯視圖。 以下，關於本實施方式的上下關係，雖是根據第1 (a )(b )圖及第2 ( a )〜（c )圖所示的構造做說明，但本 發明並不限定於此。 如第1 (a) (V)圖所示般，本實施方式的蒸鍍裝置1 係具有：連接於未圖示的真空排氣系統之真空槽2» 該真空槽2，係具備對準室2A、以及配置於對準室2A 的側部之蒸鍍室2B，透過設置於對準室2 A的上半部之閘閥 3而連接於例如真空搬運單元4。而且，可透過該閘閥3進 行基板10的搬入及搬出。 又本發明，作爲基板10，例如可採用玻璃基板等各種 的基板。 在真空槽2之對準室2 A的上面部分設置對準機構5。 本實施方式的對準機構5，是在真空槽2內之對準室2A 的上側部分之基板搬入搬出區域6，進行基板1〇與遮罩機 構（遮罩）11之對準、基板10與遮罩機構11的合體、基板 10與遮罩機構11的分離，具有在對準室2A內動作之機構部 分（未圖示）’而在第1(a) (b)圖中以一點鏈線表示 的對準區域6a進行上述各動作。S -6-201219585 In the present invention, the effect is also obtained when a cooling means for cooling the substrate is provided in the standby area. In the above aspect of the invention, the first transport mechanism includes a plurality of rollers that support the substrate and the mask and are transported in a horizontal direction, and the second transport mechanism includes a plurality of rollers that are disposed in the first transport mechanism In the case of a plurality of pin-shaped substrate elevating members that support the substrate and the mask and are transported in the vertical direction, the effect can be exhibited in this case. In the present invention, the roller of the first transport mechanism can be stretched in the horizontal direction on the inner side wall portions on both sides of the vacuum groove, and the effect can be exhibited. In the present invention, the substrate elevating member of the second transport mechanism has a support portion extending in the horizontal direction, and the support portion can be rotated at a predetermined angle in the horizontal direction, and the effect can be exhibited. On the other hand, the vapor deposition method of the present invention is a vapor deposition method using any one of the vapor deposition devices described above, and includes a step of loading the first substrate into the vacuum chamber in the substrate loading/unloading region of the vacuum chamber. a step of combining the first mask and the first mask and the first mask are transported to the vapor deposition zone by the first transport mechanism, and the first substrate is steamed through the first mask a step of plating the second substrate and the second mask that are carried into the vacuum chamber, and then placing the second substrate and the second mask in the standby region: the first substrate after the vapor deposition is completed, and the step The first mask is transported to the substrate loading/unloading area by the first transport mechanism, and the first substrate is separated from the first mask and carried out outside the vacuum chamber; and the second substrate and the second surface are a step of performing vapor deposition on the second substrate and the second mask by the first transfer 201219585 transport mechanism to the vapor deposition region, and the second substrate and the first surface after the vapor deposition is completed 2 masks by the front A first transfer mechanism for transferring the substrate to the carry-out region, and the step of unloading towards outside of the vacuum vessel to separate the second substrate from the second mask: and the foregoing steps repeated continuously performed. In the case of the present invention, the substrate loading/unloading area, the standby area, and the vapor deposition area are provided in the vacuum chamber, and the combined substrate and the mask are placed at the vapor deposition start position between the substrate loading/unloading area and the standby area, and steaming is performed. The plated regions are transported by the first transport mechanism. On the other hand, the plurality of substrates and the mask after the combination are placed between the substrate loading/unloading region and the vapor deposition start position, and between the vapor deposition start position and the standby region. The transport is carried out by a plurality of second transport mechanisms, and the standby area is placed at a position that does not overlap with the first transport mechanism, for example, in the vertical direction. Therefore, while the predetermined substrate and the mask among the plurality of substrates and the masks are combined and transported to the standby area by the predetermined second transport mechanism, the other substrates and the mask can be used. The other second transport mechanism is transported to the steaming start position, and is transported to the vapor deposition zone by the first transport mechanism to perform vapor deposition. Further, the substrate after the vapor deposition is completed can be carried out outside the vacuum chamber, and the other substrate and the mask waiting in the standby region can be placed at the vapor deposition start position. As described above, in the present invention, a plurality of substrates can be simultaneously transported and vapor-deposited. Compared with the prior art, the waiting time for substrate transport can be shortened as much as possible to reduce the waste of the evaporation material. Further, in the present invention, the order of the substrate and the mask can be reversed in the true empty space. Therefore, the waiting time for film formation can be shortened as much as possible to reduce the waste of the evaporation material. In the present invention, when the cooling means for cooling the mask is provided in the standby area, the temperature rise of the mask can be suppressed, and the mask expansion can be prevented to perform more precise mask evaporation. In the present invention, when the substrate carrying-in/out area is provided with an alignment area for aligning the loaded substrate and the mask, vapor deposition can be performed while aligning the substrate and the mask, and the entire manufacturing can be shortened. The production tact time, which can further reduce the waste of evaporation materials. In the present invention, the first transport mechanism includes a plurality of rollers that support the substrate and the cover and are transported in the horizontal direction, and the second transport mechanism has a plurality of rollers provided between the first transport mechanisms and supports the substrate. And a plurality of pin-shaped substrate elevating members that are transported in the vertical direction and are disposed in the vertical direction; and the rollers of the first transport mechanism are provided in the inner side wall portions on both sides of the vacuum chamber so as to be expandable and contractible in the horizontal direction; Or the substrate elevating member of the second transport mechanism has a support portion that extends in the horizontal direction, and the support portion can be rotated at a predetermined angle in the horizontal direction; and can be smoothly performed without using a complicated substrate transport mechanism such as a robot. The operation of transferring the combined substrate and the mask from the first transport mechanism to the second transport mechanism or from the second transport mechanism to the first transport mechanism. According to the present invention, in the apparatus for manufacturing, for example, an organic EL element, waste of evaporation material caused by waiting time at the time of vapor deposition can be reduced. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. -9 - 201219585 Fig. 1(a) is a schematic view showing an embodiment of the vapor deposition device of the present invention, and Fig. 1(b) is a schematic view showing the internal structure of the vapor deposition device. The second (a) to (c) diagrams show the structure of the substrate transport mechanism and the substrate elevating mechanism of the present embodiment, and Fig. 2(a) is a front view, and Fig. 2(b) is a side view, a second (c) The picture is a top view. Hereinafter, the vertical relationship of the present embodiment will be described based on the structures shown in Figs. 1(a)(b) and 2(a) to 2(c), but the present invention is not limited thereto. As shown in Fig. 1 (a) and (V), the vapor deposition device 1 of the present embodiment has a vacuum chamber 2» connected to a vacuum exhaust system (not shown). The vacuum chamber 2 is provided with an alignment chamber. 2A and the vapor deposition chamber 2B disposed on the side of the alignment chamber 2A are connected to, for example, the vacuum transfer unit 4 through the gate valve 3 provided in the upper half of the alignment chamber 2A. Further, the substrate 10 can be carried in and out through the gate valve 3. Further, in the present invention, as the substrate 10, for example, various substrates such as a glass substrate can be used. An alignment mechanism 5 is provided at an upper portion of the alignment chamber 2A of the vacuum chamber 2. The alignment mechanism 5 of the present embodiment is a substrate loading/unloading area 6 in the upper portion of the alignment chamber 2A in the vacuum chamber 2, and the substrate 1 is aligned with the mask mechanism (mask) 11, and the substrate 10 and The combination of the mask mechanism 11, the separation of the substrate 10 and the mask mechanism 11, has a mechanism portion (not shown) that operates in the alignment chamber 2A, and a little chain line in the first (a) (b) diagram. The indicated alignment area 6a performs the above operations.
S -10- 201219585 本實施方式的遮罩機構11，是在框狀的托架安裝遮罩 而構成（詳細構造未圖示），藉由磁鐵12將基板10固定於 遮罩機構1 1。 又對準機構5的具體構造隨後說明。 此外，在本實施方式，藉由磁鐵12將基板10固定於遮 罩機構11之組裝體具有2組，且同時運用於成膜，在本說 明中，將其中一方稱爲「第1具有遮罩的基板51」，將另 一方稱爲「第2具有遮罩的基板52」。 在對準室2A內之對準區域6a下方設置基板搬運機構21 〇 基板搬運機構21如後述般，是藉由複數個滾子將基板 1 〇沿水平方向進行搬運，在本實施方式的情況是配設成， 朝向設置於真空槽2之與例如基板搬入側的相反側之蒸鍍 室2B的基板搬運方向下游側端部延伸》 在此，在蒸鍍室2B內，設有用來在基板10上形成蒸鍍 膜之蒸鍍區域7。 在本實施方式，對準室2 A和蒸鍍室2B是藉由壁部2C 區隔，透過設置於該壁部2C之通過口 2t)而進行第1及第2具 有遮罩的基板51、52之交接。 又在通過口 2D的部分設置閘閥亦可。 如第1 (b)圖所示般，在蒸鍍室2B內之壁部2C附近的 位置，固定著蒸發源9’藉由讓第1及第2具有遮罩的基板 51、52通過該蒸發源9上’而在基板1〇上形成蒸鑪膜。 另一方面，在本實施方式的情況 '在對準室2 A之基板 -11 - 201219585 搬運機構21下方，在與基板搬運機構21不重疊的位置設置 待機區域8。 在此，在待機區域8設有冷卻板（冷卻手段）80。 該冷卻板80，係具有與遮罩機構11的托架大小相當之 板狀的冷卻部分，在該冷卻部分的內部讓例如水循環，藉 此進行冷卻。 再者，在本實施方式，在待機區域8和對準區域6a之 間，設有讓遮罩機構11及基板1〇進行昇降之基板昇降機構 22 〇 該基板昇降機構22，詳細構造隨後說明，係具有個別 獨立動作之第1及第2基板昇降機構22>、2 22，可支承第1及 第2具有遮罩的基板51、52並讓其等沿上下方向移動。 如第2(a)〜（c)圖所示般，本實施方式之基板搬運 機構2 1，是由複數個滾子構成，在對準室2 A兩側的側壁部 23、2 4分別設置成沿水平方向排列。 在此，基板搬運機構21之各滾子，是藉由未圖示的驅 動手段而朝順時針方向或逆時針方向旋轉。 此外，基板搬運機構21之各滾子，相對於對準室2A兩 側的側壁部23、24能在既定時點進行伸縮。 另一方面，本實施方式之基板昇降機構22係具有：例 如朝鉛直方向延伸之複數個（本例爲6個）基板昇降構件 22A 、 22B 、 22C 、 22D 、 22E 、 22F 。 在此，基板昇降構件22A、22B、22C、22D、22E、 22F係具有：配置在對準後之遮罩機構11的兩緣部（第2( 201219585 c )圖中，上下緣部）外側之銷狀的主體部’在各主體部 的上部，設置用來支承遮罩機構11的緣部之支承部22 a、 22b ' 22c、22d、22e、22f ° 如第2(c)圖所示般，在本例的情況，基板昇降機構 22是由2組、亦即第1及第2基板昇降機構22i、222所構成。 第1基板昇降機構22 ,係包含：設置在對準室2A之一方 的側壁部23側之2個基板昇降構件22 A，22B、以及設置在 對準室2A之另一方的側壁部24側之1個基板昇降構件22C。 在此，對準室2A之一方的側壁部23側之2個基板昇降 構件22A，22B，是配置在遮罩機構U之兩角部附近，對準 室2A之另一方的側壁部24側之1個基板昇降構件22C ’是配 置在遮罩機構11的緣部之中央部分。 另一方面，第2基板昇降機構222係包含：設置在對準 室2A之一方的側壁部23側之1個基板昇降構件22F、以及設 置在對準室2A之另一方的側壁部24側之2個基板昇降構件 22D，22E。 在此，對準室2A之另一方的側壁部24側之2個基板昇 降構件22D，22E，是配置在遮罩機構11的兩角部附近，對 準室2A之一方的側壁部23側之1個基板昇降構件22F，是配 置在遮罩機構11的緣部之中央部分。 而且，各基板昇降構件22A〜22?配_設成位於基板搬運 機構2 1之滾子間。 此外，各基板昇降構件22A〜22F之支承部22a〜22f，例 如可在水平方向旋轉90度’亦即相對於遮罩機構丨〗之緣部 -13- 201219585 的線條11A、11 B從呈平行的位置旋轉至呈垂直的位置（第 2 ( a)〜（c)圖係顯示，基板昇降構件22A〜22F之各支承 部22 a〜22 f相對於遮罩機構11之緣部的線條11A、11B呈垂 直的位置之情況）。 另一方面，在本發明的情況，雖沒有特別的限定，基 於第1及第2具有遮罩的基板51、52之位置偏移的觀點，第 1基板昇降機構基板昇降構件22A-22C的支承部 22a~22c之重心位置、與第2基板昇降機構222之基板昇降 構件22D〜22F的支承部22d~22f之重心位置宜爲一致。 接下來，參照第3(a)〜（c)圖至第5(a)〜（c)圖 以及第6(a)〜（c)圖至第12(a)〜（c)圖來說明本實 施方式的動作。又關於第6(c)圖至第12(c)圖的俯視 圖，爲了讓本發明容易理解而適當地省略基板10及磁鐵12 的圖示。 此外，上述第1具有遮罩的基板51，是由第1遮罩機構 (第1遮罩）11!、第1基板10,、第1磁鐵12,所構成；第2具 有遮罩的基板52，是由第2遮罩機構（第2遮罩）112、第2 基板1〇2、第2磁鐵122所構成。 以下說明本實施方式的動作，其前提是在對準區域6a 作成第1具有遮罩的基板51，當蒸發源9之蒸發材料開始蒸 發後，等待將新的基板1 0搬入真空槽2內的情況。 首先，如圖3 ( a)所示般，讓第1基板昇降機構22 ,下 降，藉此如第6(a)〜（c)圖所示般，將第1具有遮罩的 基板51載置於基板搬運機構21上。在本說明書，將該位置 -14- 201219585 稱爲「蒸鍍開始位置2 1 a」。 在本實施方式的情況’第1基板昇降機構22ι之基板昇 降構件22A〜22C，分別配設成位於基板搬運機構21的滾子 間，又各基板昇降構件22A~22C之支承部22a〜22c’配置在 相對於第1遮罩機構111之緣部的線條11A、11B呈垂直的位 置，如此，當第1基板昇降機構22i下降時，能將第1具有 遮罩的基板51從各基板昇降構件22 A〜22C之支承部22a〜22c 滑順地交接至基板搬運機構21。 另一方面，藉由第2基板昇降機構222支承第2遮罩機 構112並將其配置於對準區域6a內，將第2磁鐵122配置在對 準區域6a的上部，等待第2基板102的搬入。 接著，讓基板搬運機構21的滾子動作，如第3(b)圖 及第7(a) - (c)圖所示般，將第1具有遮罩的基板51朝 向蒸鍍區域7搬運而開始對第1基板10,進行蒸鍍。 又在此時點，將第1基板昇降機構22 ,之基板昇降構件 22入〜22<：的支承部223〜22.(：，配置在相對於第2遮罩機構112 之緣部的線條1 1 A、1 1 B呈平行的位置。 然後，如第3(c)圖及第8(a)〜（c)圖所示般，將 第2基板1〇2搬入對準室2A內，在對準區域6a進行對準。 再者，如4 (a)圖所示般，將第2基板1〇2安裝於第2 遮罩機構II2而作成第2具有遮罩的基板52後，讓第2基板 昇降機構2 22下降，使第2具有遮罩的基板52從對準區域6a 通過蒸鍍開始位置21a而移動至待機區域8，讓各基板昇降 構件22D〜2 2F之支承部22d〜22f移動至比冷卻板80的上面低 -15- 201219585 若干的位置’藉此將第2具有遮罩的基板52從第2基板昇降 機構22 2交接至冷卻板80。 藉此’使第2具有遮罩的基板52之第2遮罩機構ιι2密 合在冷卻板80上，而讓第2基板1〇2冷卻。 在此情況’如第9(a)〜（c)圖所示般，在讓第2基 板昇降機構222下降時’使基板搬運機構21之各滾子分別 往對準室2A兩側的側壁部23、24側移動而縮短其長度，藉 此避免第2遮罩機構112的緣部（線條11A及11B的部分）與 基板搬運機構21的各滾子接觸。 此外，第1基板昇降機構21,之基板昇降構件22A〜22C 的支承部22 a〜2 2c，由於配置在相對於第2遮罩機構112的 緣部之線條1 1 A、1 1 B呈平行的位置，因此基板昇降構件 22A〜2 2C之支承部22 a〜2 2 c不致與第2遮罩機構112的緣部接 觸。 而且，藉由此動作，使第2具有遮罩的基板52的第2遮 罩機構1 12密合於冷卻板80上，而讓第2基板102冷卻。 另一方面，如第4(a) (b)圖及第10(a)〜（c)圖 所示般，關於第1具有遮罩的基板51，是從蒸銨室2B朝向 對準室2 A搬運，而繼續進行對第1基板10,表面的蒸鍍。 又在此時點，將第1基板昇降機構2 1 i之基板昇降構件 22A-22C的支承部22a~22c，配置在相對於第2遮罩機構112 的緣部之線條1 1 A、1 1 B呈垂直的位置。 接著，如第4(c)圖所示般，當第1具有遮罩的基板 5 1的蒸鍍結束後，如第5 ( a )圖及第1 1 ( a )〜（c )圖所S -10- 201219585 The mask mechanism 11 of the present embodiment is configured by attaching a mask to a frame-shaped bracket (not shown in detail), and the substrate 10 is fixed to the mask mechanism 1 by the magnet 12 . The specific configuration of the alignment mechanism 5 will be described later. Further, in the present embodiment, the assembly in which the substrate 10 is fixed to the mask mechanism 11 by the magnet 12 has two sets and is simultaneously used for film formation. In the present description, one of them is referred to as "the first mask". The other substrate 51' is referred to as "the second substrate 52 having a mask". The substrate transport mechanism 21 is disposed below the alignment region 6a in the alignment chamber 2A. The substrate transport mechanism 21 transports the substrate 1 in the horizontal direction by a plurality of rollers as will be described later. It is disposed so as to extend toward the downstream end portion of the vapor deposition chamber 2B provided on the opposite side of the substrate carrying side of the vacuum chamber 2 in the substrate conveyance direction. Here, in the vapor deposition chamber 2B, the substrate 10 is provided. A vapor deposition region 7 of the vapor deposition film is formed thereon. In the present embodiment, the alignment chamber 2A and the vapor deposition chamber 2B are separated by the wall portion 2C, and the first and second masked substrates 51 are formed by passing through the opening 2t) provided in the wall portion 2C. The handover of 52. It is also possible to provide a gate valve in the portion passing through the port 2D. As shown in Fig. 1(b), the evaporation source 9' is fixed to the vicinity of the wall portion 2C in the vapor deposition chamber 2B by the evaporation of the first and second masked substrates 51, 52. On the source 9, a vaporizer film is formed on the substrate 1A. On the other hand, in the case of the present embodiment, the standby area 8 is provided at a position that does not overlap the substrate conveyance mechanism 21 under the substrate -11 - 201219585 of the alignment chamber 2A. Here, a cooling plate (cooling means) 80 is provided in the standby area 8. The cooling plate 80 has a plate-like cooling portion corresponding to the size of the bracket of the mask mechanism 11, and, for example, water is circulated inside the cooling portion, thereby cooling. Further, in the present embodiment, between the standby area 8 and the alignment area 6a, a substrate elevating mechanism 22 for elevating and lowering the mask mechanism 11 and the substrate 1 is provided, and the substrate elevating mechanism 22 is provided. The detailed structure will be described later. The first and second substrate elevating mechanisms 22 > 22 having individual independent operations can support the first and second masked substrates 51 and 52 and move them in the vertical direction. As shown in the second (a) to (c), the substrate transfer mechanism 21 of the present embodiment is composed of a plurality of rollers, and is disposed on the side wall portions 23 and 24 on both sides of the alignment chamber 2A. The rows are arranged in the horizontal direction. Here, each of the rollers of the substrate transport mechanism 21 is rotated clockwise or counterclockwise by a driving means (not shown). Further, each of the rollers of the substrate transport mechanism 21 can be expanded and contracted at a predetermined timing with respect to the side wall portions 23 and 24 on both sides of the alignment chamber 2A. On the other hand, the substrate elevating mechanism 22 of the present embodiment has, for example, a plurality of (six in this example) substrate elevating members 22A, 22B, 22C, 22D, 22E, and 22F extending in the vertical direction. Here, the substrate elevating members 22A, 22B, 22C, 22D, 22E, and 22F are disposed on both outer edges of the mask mechanism 11 after alignment (the second (201219585 c), the outer side of the upper and lower edges) The pin-shaped main body portion ' is provided at the upper portion of each main body portion with support portions 22 a, 22b ' 22c, 22d, 22e, 22f ° for supporting the edge portion of the mask mechanism 11 as shown in Fig. 2(c) In the case of this example, the substrate elevating mechanism 22 is composed of two sets, that is, the first and second substrate elevating mechanisms 22i and 222. The first substrate elevating mechanism 22 includes two substrate elevating members 22 A and 22B provided on one side of the side wall portion 23 of the alignment chamber 2A, and side wall portions 24 provided on the other side of the alignment chamber 2A. One substrate elevating member 22C. Here, the two substrate elevating members 22A and 22B on the side of the side wall portion 23 of one of the alignment chambers 2A are disposed in the vicinity of the two corner portions of the mask mechanism U, and on the other side wall portion 24 side of the alignment chamber 2A. One of the substrate elevating members 22C' is disposed at a central portion of the edge of the mask mechanism 11. On the other hand, the second substrate elevating mechanism 222 includes one substrate elevating member 22F provided on the side of the side wall portion 23 of one of the alignment chambers 2A, and a side wall portion 24 side provided on the other side of the alignment chamber 2A. Two substrate lifting members 22D, 22E. Here, the two substrate elevating members 22D and 22E on the other side of the side wall portion 24 of the alignment chamber 2A are disposed in the vicinity of the corner portions of the mask mechanism 11, and on the side of the side wall portion 23 of one of the alignment chambers 2A. One of the substrate elevating members 22F is disposed at a central portion of the edge of the mask mechanism 11. Further, each of the substrate elevating members 22A to 22 is disposed so as to be positioned between the rollers of the substrate transporting mechanism 2 1 . Further, the support portions 22a to 22f of the respective substrate elevating members 22A to 22F can be rotated, for example, in a horizontal direction by 90 degrees, that is, parallel to the lines 11A and 11 B of the edge portion-13-201219585 of the mask mechanism. The position is rotated to a position perpendicular to the second (a) to (c), and the lines 11A of the support portions 22a to 22f of the substrate elevating members 22A to 22F with respect to the edge portion of the mask mechanism 11 are displayed. 11B is in a vertical position). On the other hand, in the case of the present invention, the support of the first substrate elevating mechanism substrate elevating members 22A to 22C is based on the positional displacement of the first and second masked substrates 51 and 52. The positions of the centers of gravity of the portions 22a to 22c and the positions of the centers of gravity of the support portions 22d to 22f of the substrate elevating members 22D to 22F of the second substrate elevating mechanism 222 are preferably aligned. Next, the third (a) to (c) to fifth (a) to (c) and sixth (a) to (c) to 12 (a) to (c) drawings will be described. The action of the embodiment. Further, in the plan views of Figs. 6(c) to 12(c), the illustration of the substrate 10 and the magnet 12 is appropriately omitted for the sake of easy understanding of the present invention. Further, the first masked substrate 51 is composed of a first mask mechanism (first mask) 11!, a first substrate 10, and a first magnet 12, and a second masked substrate 52. The second mask mechanism (second mask) 112, the second substrate 1〇2, and the second magnet 122 are formed. The operation of the present embodiment will be described below, provided that the substrate 51 having the first mask is formed in the alignment region 6a, and after the evaporation material of the evaporation source 9 starts to evaporate, the new substrate 10 is waited for being carried into the vacuum chamber 2. Happening. First, as shown in FIG. 3(a), the first substrate elevating mechanism 22 is lowered, whereby the first substrate 51 having the mask is placed as shown in FIGS. 6(a) to 6(c). It is on the substrate transport mechanism 21. In this specification, the position -14 - 201219585 is referred to as "the vapor deposition start position 2 1 a". In the case of the present embodiment, the substrate lifting and lowering members 22A to 22C of the first substrate elevating mechanism 22i are disposed between the rollers of the substrate transporting mechanism 21, and the supporting portions 22a to 22c' of the respective substrate elevating members 22A to 22C. The line 11A, 11B is disposed at a position perpendicular to the edge portion of the first mask mechanism 111. When the first substrate elevating mechanism 22i is lowered, the first mask-attached substrate 51 can be lifted from each of the substrate elevating members. The support portions 22a to 22c of 22 A to 22C are smoothly transferred to the substrate conveyance mechanism 21. On the other hand, the second mask mechanism 112 is supported by the second substrate elevating mechanism 222 and placed in the alignment region 6a, and the second magnet 122 is placed on the upper portion of the alignment region 6a, waiting for the second substrate 102. Move in. Next, the roller of the substrate transport mechanism 21 is operated, and as shown in the third (b) and seventh (a) - (c), the first masked substrate 51 is transported toward the vapor deposition region 7. The first substrate 10 is started to be vapor-deposited. At this time, the substrate lifting and lowering member 22 of the first substrate elevating mechanism 22 is placed in the support portions 223 to 22 of -22 <: (:: the line 1 1 disposed at the edge of the second mask mechanism 112 A and 1 1 B are in parallel positions. Then, as shown in Fig. 3(c) and Figs. 8(a) to 8(c), the second substrate 1〇2 is carried into the alignment chamber 2A. Alignment is performed in the quasi-area 6a. Further, as shown in FIG. 4(a), the second substrate 1〇2 is attached to the second mask mechanism II2 to form the second masked substrate 52, and then the second substrate is placed. The substrate elevating mechanism 22 is lowered, and the second masked substrate 52 is moved from the alignment region 6a to the standby region 8 by the vapor deposition start position 21a, and the support portions 22d to 22f of the substrate elevating members 22D to 2F are moved. Up to -15 - 201219585 a number of positions lower than the upper surface of the cooling plate 80. Thus, the second masked substrate 52 is transferred from the second substrate elevating mechanism 22 2 to the cooling plate 80. By this, the second mask is provided. The second mask mechanism ιι of the substrate 52 is adhered to the cooling plate 80, and the second substrate 1〇2 is cooled. In this case, as shown in the figure 9(a) to (c), 2 substrate When the lowering mechanism 222 is lowered, the rollers of the substrate conveying mechanism 21 are moved toward the side wall portions 23 and 24 on both sides of the alignment chamber 2A to shorten the length thereof, thereby avoiding the edge portion of the second mask mechanism 112 (line) The portions of the 11A and 11B are in contact with the respective rollers of the substrate transport mechanism 21. The support portions 22a to 2cc of the substrate elevating members 22A to 22C of the first substrate elevating mechanism 21 are disposed in relation to the second cover. Since the lines 1 1 A and 1 1 B of the edge portion of the cover mechanism 112 are in parallel positions, the support portions 22 a to 2 2 c of the substrate elevating members 22A to 2 2C are not in contact with the edge portions of the second mask mechanism 112. Then, by this operation, the second mask mechanism 1 12 of the second masked substrate 52 is brought into close contact with the cooling plate 80 to cool the second substrate 102. On the other hand, as shown in the fourth (a) (b) The first substrate having the mask 51 is transported from the ammonium halide chamber 2B toward the alignment chamber 2 A, and the first substrate is continued as shown in FIGS. 10(a) to 10(c). 10, vapor deposition on the surface. At this point, the support portions 22a to 22c of the substrate lifting and lowering members 22A to 22C of the first substrate elevating mechanism 2 1 i are disposed in relation to 2 The lines 1 1 A and 1 1 B of the edge of the mask mechanism 112 are in a vertical position. Next, as shown in Fig. 4(c), after the vapor deposition of the first masked substrate 51 is completed , as shown in Figure 5 (a) and Figure 1 1 (a) to (c)
S -16- 201219585 示般，讓第1及第2基板昇降機構22!、222上昇，藉此使第1 具有遮罩的基板5〗移動至對準室2A內的對準區域6a，並使 第2具有遮罩的基板52移動至基板搬運機構21的上方位置 〇 在此情況，如第1 1 ( a ) ~ ( c )圖所示般，在讓第2基 板昇降機構2 22上昇時，使基板搬運機構21之各滾子分別 朝對準室2A兩側的側壁部23、24側移動而縮短其長度，藉 此避免第2遮罩機構112的緣部（線條11A及11B的部分）與 基板搬運機構21的各滾子接觸。 然後，如第5(b)圖所示般，在對準室2 A的對準區域 6a，讓第1遮罩機構1U與第1基板10,分離，並將第1基板 lOiS對準室2A往真空搬運單元4搬出。 與此動作並行地，如1 2 ( a )〜（c )圖所示般，將基 板搬運機構21之各滾子伸長後，讓第2基板昇降機構222下 降，藉此將第2具有遮罩的基板52配置在基板搬運機構21 上的蒸鍍開始位置2 1 a。 接著，讓基板搬運機構21的滾子動作，如第5(c)圖 所示般，將第2具有遮罩的基板5 2朝向蒸鍍區域7搬運，對 第2基板102開始進行蒸鍍。 與此動作並行地，如第5 ( c )圖所示般，將新的基板 、亦即第3基板〗03搬入對準室2A內，在對準區域6a進行對 準。 以下，對複數個基板1 0連續地進行上述步驟。 以上敘述之本實施方式，是在真空槽2內設置：具有 -17- 201219585 對準區域6a之基板搬入搬出區域6、蒸鏟區域7、以及待機 區域8，將第1及第2具有遮罩的基板51、52在位於對準區 域6a和待機區域8間之蒸鍍開始位置2 1 a、與蒸鍍區域7之 間藉由第1搬運機構進行搬運，另一方面，將第1及第2具 有遮罩的基板51、52在對準區域6a與蒸鍍開始位置21a之 間、以及蒸鍍開始位置2 1 a與待機區域8之間藉由第1及第2 基板昇降機構22 !、222分別進行搬運，再者，將待機區域8 配置在相對於基板搬運機構21例如在上下方向不重疊的位 置；因此，將第1及第2具有遮罩的基板51、52當中例如第 2具有遮罩的基板52，藉由第2基板昇降機構222搬運至待 機區域8而進行待機的期間，對第1具有遮罩的基板51，可 藉由第1基板昇降機構22 !搬運至蒸鍍開始位置21a，並藉 由基板搬運機構21搬運至蒸鍍區域7而進行蒸鍍。而且， 可將蒸鍍結束後之第1基板真空槽2外搬出，並將在 待機區域8進行待機之第2具有遮罩的基板52配置於蒸鏟開 始位置2 1 a。 如此般，依據本實施方式，可對第1及第2基板1(^、 1〇2同時進行搬運及蒸鍍，相較於習知技術，可儘量縮短 基板搬運的等待時間而減少蒸發材料的浪費。 此外’在本實施方式，在真空槽2內，能使第1及第2 具有遮罩的基板51、52之順序顛倒，因此可儘量縮短成膜 的等待時間而減少蒸發材料的浪費。 再者’在本實施方式’由於在待機區域8設置冷卻板 8 0 ’可抑制遮罩機構1 1的溫度上昇，因此能防止遮罩膨脹In the same manner as in the above, the first and second substrate elevating mechanisms 22! and 222 are raised, whereby the first masked substrate 5 is moved to the alignment region 6a in the alignment chamber 2A, and The second substrate 52 having the mask moves to the upper position of the substrate transport mechanism 21. In this case, when the second substrate elevating mechanism 22 is raised as shown in the first 1 (a) to (c), Each of the rollers of the substrate transport mechanism 21 is moved toward the side wall portions 23 and 24 on both sides of the alignment chamber 2A to shorten the length thereof, thereby avoiding the edge portion of the second mask mechanism 112 (portions of the lines 11A and 11B). It is in contact with each roller of the substrate conveyance mechanism 21. Then, as shown in FIG. 5(b), the first mask mechanism 1U is separated from the first substrate 10 in the alignment region 6a of the alignment chamber 2A, and the first substrate 10iS is aligned with the chamber 2A. It is carried out to the vacuum transfer unit 4. In parallel with this operation, as shown in FIGS. 1 2 ( a ) to (c ), after the rollers of the substrate transport mechanism 21 are extended, the second substrate elevating mechanism 222 is lowered, whereby the second mask is provided. The substrate 52 is disposed at the vapor deposition start position 2 1 a on the substrate conveyance mechanism 21. Then, the roller of the substrate transport mechanism 21 is operated, and as shown in Fig. 5(c), the second masked substrate 52 is transported toward the vapor deposition region 7, and vapor deposition is started on the second substrate 102. In parallel with this operation, as shown in Fig. 5(c), a new substrate, i.e., the third substrate -03, is carried into the alignment chamber 2A, and is aligned in the alignment region 6a. Hereinafter, the above steps are continuously performed on a plurality of substrates 10. In the embodiment described above, the substrate loading/unloading area 6, the steaming shovel area 7, and the standby area 8 having the -17-201219585 alignment area 6a are provided in the vacuum chamber 2, and the first and second masks are provided. The substrates 51 and 52 are transported by the first transport mechanism between the vapor deposition start position 2 1 a between the alignment region 6 a and the standby region 8 and the vapor deposition region 7 , and the first and the first The masked substrates 51 and 52 are separated by the first and second substrate elevating mechanisms 22 between the alignment region 6a and the vapor deposition start position 21a, and between the vapor deposition start position 2 1 a and the standby region 8 The 222 is transported separately, and the standby area 8 is disposed at a position that does not overlap with the board transport mechanism 21 in the vertical direction, for example. Therefore, for example, the first and second masked substrates 51 and 52 have the second one. When the substrate 52 of the mask is transported to the standby area 8 by the second substrate elevating mechanism 222 and is in standby, the substrate 51 having the first mask can be transported to the vapor deposition by the first substrate elevating mechanism 22! Position 21a and transported to the vapor deposition zone by the substrate transport mechanism 21 The domain 7 was vapor-deposited. Further, the first substrate vacuum chamber 2 after the vapor deposition is completed can be carried out, and the second masked substrate 52 waiting in the standby region 8 can be placed at the steamer start position 2 1 a. As described above, according to the present embodiment, the first and second substrates 1 (^, 1〇2 can be simultaneously transported and vapor-deposited, and the waiting time of the substrate transport can be shortened as much as possible to reduce the evaporation material. Further, in the present embodiment, in the vacuum chamber 2, the order of the first and second masked substrates 51 and 52 can be reversed. Therefore, the waiting time for film formation can be shortened as much as possible to reduce the waste of the evaporation material. Furthermore, in the present embodiment, since the cooling plate 80' is provided in the standby area 8, the temperature rise of the mask mechanism 11 can be suppressed, so that the mask can be prevented from expanding.
S -18- 201219585 而進行更精密的遮罩蒸鍍。 再者，在本實施方式，由於在基板搬入搬出區域6設 置對準區域6a，可一邊進行基板10與遮罩機構11的對準— 邊進行蒸鍍，因此可縮短製程全體的生產節拍時間，藉此 可更加減少蒸發材料的浪費。 此外，在本實施方式，基板搬運機構21係具有··支承 第1及第2具有遮罩的基板51、52並沿水平方向進行搬運之 複數個滾子；且第1及第2基板昇降機構22 ,、222係具有： 設置在基板搬運機構21之複數個滾子間，用來支承第1及 第2具有遮罩的基板51、52並沿鉛直方向進行搬運之複數 個銷狀的基板昇降構件22A-22F;又基板搬運機構21之滾 子，是在真空槽2兩側之內側壁部23、24設置成在水平方 向可伸縮自如；再者，第1及第2基板昇降機構22,、222之 基板昇降構件22A〜22F具有朝水平方向延伸之支承部 22a〜22f，該等支承部22a〜22 f在水平方向例如可旋轉90度 :因此，不須使用機械人等複雜的基板搬運機構，即可滑 順地進行：將第1及第2具有遮罩的基板5 1、52從基板搬運 機構21交接至第1及第2基板昇降機構22!、222、或從第1及 第2基板昇降機構22i、222交接至基板搬運機構21的動作。 又本發明並不限定於上述實施方式，可進行各種的變 更。 例如，在上述實施方式，第1及第2基板昇降機構22 ! 、222分別具有3個基板昇降構件22A〜22C以及22D〜22F， 但本發明並不限定於此，分別設置4個以上的基板昇降構 -19- 201219585 件亦可。 又在此情況也是，各基板昇降構件的支承部之重心宜 爲一致。 此外，在上述實施方式’是在基板搬入搬出區域6設 置對準區域6a，但本發明並不限定於此，將在其他真空槽 實施對準後的基板與遮罩機構搬入真空槽2內而進行蒸鍍 亦可。 再者，在上述實施方式，是將基板搬入搬出區域6設 置在基板搬運機構21上方，並將待機區域8設置在基板搬 運機構21下方，但將基板搬入搬出區域6設置在基板搬運 機構21下方，並將待機區域8設置在基板搬運機構21上方 亦可。 再者，將基板搬入搬出區域6及待機區域8設置在基板 搬運機構2 1的側方亦可。 但基於縮小設置面積的觀點，例如像上述實施方式那 樣，將基板搬入搬出區域6及待機區域8設置在基板搬運機 構21的上下位置是較佳的。 此外，待機區域8也能設有二個以上。在此情況較佳 爲，對應於各待機區域8而設置個別的搬運機構。 再者，在上述實施方式所說明的例子，是讓基板10以 水平的狀態朝水平方向及鉛直方向移動的情況，但本發明 並不限定於此，也能適用於讓基板以鉛直的狀態朝鉛直方 向及水平方向移動的情況。在此情況，相對於朝向鉛直方 向的基板，是從蒸發源朝水平方向釋出蒸氣而進行蒸鑛。 -20- 201219585 【圖式簡單說明】 第1(a)圖係示意顯示本發明的蒸鍍裝置的實施方式 之說明圖。 第1 (b)圖係顯示該蒸鑛裝置的內部構造之槪略圖。 第2圖係顯示該實施方式的基板_運機構及基板昇降 機構之構造，第2 ( a )圖爲前視圖，第2 ( b )圖爲側視圖 ，第2 ( c )圖爲俯視圖。 第3(a) ~(c)圖係用來說明該實施方式的動作之圖 (其 1 )。 第4(a)〜（c)圖係用來說明該實施方式的動作之圖 (其 2)。 第5(a)〜（c)圖係用來說明該實施方式的動作之圖 (其 3)。 第6圖係顯示該實施方式的動作之說明圖（其1)，第 6(a)圖爲前視圖，第6(b)圖爲側視圖，第6(c)圖爲 俯視圖。 第7圖係顯示該實施方式的動作之說明圖（其2)，第 7(a)圖爲前視圖，第7(b)圖爲側視圖，第7(c)圖爲 俯視圖。 第8圖係顯示該實施方式的動作之設明圖（其3)，第 8 ( a )圖爲前視圖，第8 ( b )圖爲側視圖，第8 ( c )圖爲 俯視圖。 第9圖係顯示該實施方式的動作之說明圖（其4)，第 -21 - 201219585 9 ( a )圖爲前視圖，第9 ( b )圖爲側視圖，第9 ( c )圖爲 俯視圖。 第10圖係顯示該實施方式的動作之說明圖（其5)， 第1 0 ( a )圖爲前視圖，第1 0 ( b )圖爲側視圖，第1 0 ( c )圖爲俯視圖。 第1 1圖係顯示該實施方式的動作之說明圖（其6 )， 第1 1 ( a )圖爲前視圖，第1 1 ( b )圖爲側視圖，第1 1 ( c )圖爲俯視圖。 第12圖係顯示該實施方式的動作之說明圖（其7)， 第1 2 ( a )圖爲前視圖，第1 2 ( b )圖爲側視圖，第1 2 ( c )圖爲俯視圖。第1 3圖係顯示習知蒸鍍裝置之槪略構造圖。 明 說 號 符 件 元 要 主 置 裝槽 鍍空 蒸真S -18- 201219585 for more precise mask evaporation. Further, in the present embodiment, since the alignment region 6a is provided in the substrate loading/unloading region 6, the vapor deposition can be performed while the substrate 10 and the mask mechanism 11 are aligned, so that the production tact time of the entire process can be shortened. Thereby, the waste of the evaporation material can be further reduced. Further, in the present embodiment, the substrate transport mechanism 21 includes a plurality of rollers that support the first and second masked substrates 51 and 52 and are transported in the horizontal direction; and the first and second substrate elevating mechanisms 22 and 222 are: a plurality of pin-shaped substrate lifts provided between the plurality of rollers of the substrate transport mechanism 21 for supporting the first and second masked substrates 51 and 52 and transporting them in the vertical direction The members 22A-22F and the rollers of the substrate transport mechanism 21 are disposed on both sides of the vacuum chamber 2 so as to be expandable and contractible in the horizontal direction; and the first and second substrate elevating mechanisms 22, The substrate elevating members 22A to 22F of 222 have support portions 22a to 22f extending in the horizontal direction, and the support portions 22a to 22f are rotated by 90 degrees in the horizontal direction, for example, so that complicated substrate handling such as a robot is not required. The mechanism can be smoothly performed: the first and second masked substrates 5 1 and 52 are transferred from the substrate transport mechanism 21 to the first and second substrate elevating mechanisms 22, 222, or from the first and the 2 The substrate elevating mechanism 22i, 222 is handed over to the substrate transport mechanism 21 . Further, the present invention is not limited to the above embodiment, and various modifications can be made. For example, in the above-described embodiment, the first and second substrate elevating mechanisms 22 and 222 have three substrate elevating members 22A to 22C and 22D to 22F, respectively, but the present invention is not limited thereto, and four or more substrates are provided. Lifting structure -19- 201219585 pieces are also available. Also in this case, the center of gravity of the support portion of each of the substrate elevating members is preferably uniform. Further, in the above-described embodiment, the alignment region 6a is provided in the substrate loading/unloading region 6. However, the present invention is not limited thereto, and the substrate and the masking mechanism that have been aligned in the other vacuum chambers are carried into the vacuum chamber 2 It is also possible to carry out vapor deposition. In the above embodiment, the substrate loading/unloading area 6 is provided above the board conveying mechanism 21, and the standby area 8 is provided below the board conveying mechanism 21. However, the board loading/unloading area 6 is provided below the board conveying mechanism 21. The standby area 8 may be disposed above the substrate transport mechanism 21. Further, the substrate loading/unloading area 6 and the standby area 8 may be provided on the side of the substrate conveying mechanism 21. However, from the viewpoint of reducing the installation area, for example, it is preferable to provide the substrate loading/unloading area 6 and the standby area 8 at the upper and lower positions of the substrate conveying mechanism 21 as in the above embodiment. Further, the standby area 8 can also be provided with two or more. In this case, it is preferable to provide an individual transport mechanism corresponding to each of the standby areas 8. Further, in the example described in the above embodiment, the substrate 10 is moved in the horizontal direction and the vertical direction in a horizontal state. However, the present invention is not limited thereto, and can be applied to the substrate in a vertical state. Moving in the vertical direction and horizontal direction. In this case, the vapor is discharged from the evaporation source in the horizontal direction with respect to the substrate oriented in the vertical direction. -20-201219585 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1(a) is a schematic view showing an embodiment of a vapor deposition device of the present invention. Figure 1 (b) shows a schematic diagram of the internal structure of the distillation apparatus. Fig. 2 is a view showing the structure of the substrate-transport mechanism and the substrate elevating mechanism of the embodiment, wherein Fig. 2(a) is a front view, Fig. 2(b) is a side view, and Fig. 2(c) is a plan view. Figures 3(a) to (c) are diagrams for explaining the operation of this embodiment (1). The fourth (a) to (c) drawings are diagrams for explaining the operation of the embodiment (the second). The fifth (a) to (c) drawings are diagrams for explaining the operation of the embodiment (the third). Fig. 6 is an explanatory view (1) of the operation of the embodiment, Fig. 6(a) is a front view, Fig. 6(b) is a side view, and Fig. 6(c) is a plan view. Fig. 7 is an explanatory view (2) of the operation of the embodiment, Fig. 7(a) is a front view, Fig. 7(b) is a side view, and Fig. 7(c) is a plan view. Fig. 8 is a plan view showing the operation of the embodiment (3), the eighth (a) is a front view, the eighth (b) is a side view, and the eighth (c) is a plan view. Fig. 9 is an explanatory view showing the operation of the embodiment (the 4th), 21 - 201219585 9 (a) is a front view, 9 (b) is a side view, and 9 (c) is a top view . Fig. 10 is an explanatory view (5) showing the operation of the embodiment, the 10th (a)th is a front view, the 10th (b)th is a side view, and the 10th (c)th is a plan view. Fig. 1 is an explanatory view (6) of the operation of the embodiment, the first 1 (a) is a front view, the 1 1 (b) is a side view, and the 1 1 (c) is a top view. . Fig. 12 is an explanatory view (7) of the operation of the embodiment, the first 2 (a) is a front view, the 1 2 (b) is a side view, and the 1 2 (c) is a plan view. Fig. 13 is a schematic structural view showing a conventional vapor deposition device. Ming said the number of symbols to be the main sump plating
室 準 對 ARoom alignment
室 鍍 蒸 B 構 機 準 對 域 區 出 搬 入 搬 板 基 域 區 準 對 域域 區區源 鍍機發 蒸待蒸 s -22- 201219585 I 〇 :基板 ίο!:第1基板 1〇2 :第2基板 II :遮罩機構 lli :第1遮罩機構 1 12 :第2遮罩機構 12 :磁鐵 1 2 i :第1磁鐵 122 :第2磁鐵 21:基板搬運機構（第1搬運機構） 22!:第1基板昇降機構（第2搬運機構） 222:第2基板昇降機構（第2搬運機構） 2 1 a :蒸鍍開始位置 22A〜22F :基板昇降構件 22a〜22f :支承部 51 :第1具有遮罩的基板 52 :第2具有遮罩的基板 80 :冷卻板（冷卻手段） -23-Room plating steam B structure machine quasi-domain area loading and unloading board base area quasi-domain area area source plating machine steaming to be steamed -22-201219585 I 〇: substrate ίο!: 1st substrate 1〇2: 2 Substrate II: mask mechanism lli: first mask mechanism 1 12 : second mask mechanism 12 : magnet 1 2 i : first magnet 122 : second magnet 21 : substrate transport mechanism (first transport mechanism) 22!: First substrate elevating mechanism (second transport mechanism) 222: second substrate elevating mechanism (second transport mechanism) 2 1 a : vapor deposition start positions 22A to 22F: substrate elevating members 22a to 22f: support portion 51: first Masked substrate 52: 2nd masked substrate 80: Cooling plate (cooling means) -23-