TW201203613A - Semiconductor light-emitting element, protective film of semiconductor light-emitting element, and method for fabricating same - Google Patents

Semiconductor light-emitting element, protective film of semiconductor light-emitting element, and method for fabricating same Download PDF

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Publication number
TW201203613A
TW201203613A TW100105984A TW100105984A TW201203613A TW 201203613 A TW201203613 A TW 201203613A TW 100105984 A TW100105984 A TW 100105984A TW 100105984 A TW100105984 A TW 100105984A TW 201203613 A TW201203613 A TW 201203613A
Authority
TW
Taiwan
Prior art keywords
film
protective film
semiconductor light
emitting device
sin
Prior art date
Application number
TW100105984A
Other languages
English (en)
Chinese (zh)
Inventor
Hidetaka Kafuku
Toshihiko Nishimori
Hisao Kawasaki
Original Assignee
Mitsubishi Heavy Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Ind Ltd filed Critical Mitsubishi Heavy Ind Ltd
Publication of TW201203613A publication Critical patent/TW201203613A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
TW100105984A 2010-04-28 2011-02-23 Semiconductor light-emitting element, protective film of semiconductor light-emitting element, and method for fabricating same TW201203613A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010104443A JP2011233784A (ja) 2010-04-28 2010-04-28 半導体発光素子、半導体発光素子の保護膜及びその作製方法

Publications (1)

Publication Number Publication Date
TW201203613A true TW201203613A (en) 2012-01-16

Family

ID=44861210

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100105984A TW201203613A (en) 2010-04-28 2011-02-23 Semiconductor light-emitting element, protective film of semiconductor light-emitting element, and method for fabricating same

Country Status (6)

Country Link
US (1) US20130037850A1 (https=)
EP (1) EP2565946A4 (https=)
JP (1) JP2011233784A (https=)
KR (1) KR20120125326A (https=)
TW (1) TW201203613A (https=)
WO (1) WO2011135889A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011233783A (ja) * 2010-04-28 2011-11-17 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JP2013251423A (ja) * 2012-06-01 2013-12-12 Mitsubishi Heavy Ind Ltd 発光素子の保護膜の作製方法及び装置
JP6476854B2 (ja) * 2014-12-26 2019-03-06 日亜化学工業株式会社 発光素子の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240535A (ja) * 1994-02-28 1995-09-12 Kyocera Corp 薄膜パターンの形成方法
DE69516933T2 (de) * 1994-04-06 2000-12-07 At&T Ipm Corp., Coral Gables Herstellungsverfahren für eine Vorrichtung mit einer SiOx Schicht
JP3723434B2 (ja) * 1999-09-24 2005-12-07 三洋電機株式会社 半導体発光素子
JP2003332616A (ja) * 2002-05-14 2003-11-21 Sharp Corp 化合物半導体素子およびその製造方法
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
JP4543732B2 (ja) * 2004-04-20 2010-09-15 日立電線株式会社 発光ダイオードアレイ
JP2006041403A (ja) 2004-07-29 2006-02-09 Nichia Chem Ind Ltd 半導体発光素子
JP2007189097A (ja) 2006-01-13 2007-07-26 Nichia Chem Ind Ltd 半導体発光素子
US20100308357A1 (en) * 2007-10-29 2010-12-09 Mitsubishi Chemical Corporation Semiconductor light emitting element and method for manufacturing the same
US8031754B2 (en) * 2008-04-24 2011-10-04 The Furukawa Electric Co., Ltd. Surface emitting laser element, surface emitting laser element array, method of fabricating a surface emitting laser element

Also Published As

Publication number Publication date
JP2011233784A (ja) 2011-11-17
EP2565946A4 (en) 2014-09-10
KR20120125326A (ko) 2012-11-14
US20130037850A1 (en) 2013-02-14
WO2011135889A1 (ja) 2011-11-03
EP2565946A1 (en) 2013-03-06

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