201130572 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種於具備狹縫喷嘴之基板處理裝置中形 成複數層薄膜層之技術。 【先前技術】 . 自先前以來，提出有自狹縫噴嘴噴出處理液，而於基板 之表面形成薄膜之基板處理裝置。例如於專利文獻1中，記 載有自狹縫喷嘴對基板喷出處理液之基板處理裝置。 [先前技術文獻] [專利文獻] [專利文獻1]曰本專利特開2007-287914號公報 【發明内容】 [發明所欲解決之問題] 一般而言，當使用狹縫喷嘴於基板上形成薄膜時，藉由 對塗佈有處理液之基板進行減壓乾燥與熱處理（加熱及冷 卻）而形成薄膜。因此，當形成複數層薄膜層時，將塗佈― 乾燥—熱處理這一循環重複特定之次數，必然會增長裝置 之長度（參照圖11)。 又’於如上述般之裝置構成中’會產生如下問題：即便 當僅於依序配置之複數個步驟中選擇特定之步驟時，若不 通過不必要之處理步驟部，則亦無法到達後續處理步驟。 因此，有整體之基板處理片數降低之虞。 本發明係有鑒於上述問題而成者，其目的在於提出一種 形成複數層薄膜層之基板處理裝置，該基板處理裝置係縮 152413.doc 201130572 · 知·裝置全長且抑制處理片數之降低者。 [解決問題之技術手段] 為解決上述問題’技術方案i之發明係一種基板處理裝 置，其係對基板塗佈特定之處理液而形成塗佈膜者，其特 徵在於包括：塗佈機構，其具備第}及第2狹縫喷嘴、以及 水平地載置上述基板之載置機構，且藉由使該狹縫喷嘴相 子；載置在上述載置機構上之基板掃描移動，而對上述基 板之上表面塗佈處理液；糾乾燥機構，其進行對藉由上： 塗佈機構而得到塗佈之上述基板進行乾燥處理之步驟中之 至少一部分即第1乾燥步驟；第丨搬送機構，其將藉由上述 塗佈機構而得到塗佈之上述基板搬入至上述第丨乾燥機 構；以及控制機構，其控制上述塗佈機構、上述第丨乾燥機 構、及上述第1搬送機構；且上述塗佈機構及上述第丨乾燥 機構係配置於以上述第i搬送機構為中心之同心圓上，上述 控制機構係於藉由上述搬送機構’將利用上述塗佈機構之 上述第1狭縫喷嘴而塗佈處理液之基板搬入至上述第1乾燥 機構進行第1乾燥步驟之後，將該基板再次載置於上述塗佈 機構之載置機構上，並於由上述第1狹縫噴嘴所塗佈之處理 液之層的上表面’藉由上述第2狹縫喷嘴對與該層大致相同 之面積塗佈處理液。 又，技術方案2之發明係如技術方案1之基板處理裝置， 其中，更包括：第2搬送機構，其將藉由上述第1搬送機構 而搬送至上述第1乾燥機構之基板，自上述第1乾燥機構之 與上述第1搬送機構所對向之面不同之面搬出；以及待機機 152413.doc 201130572 構’其與上述第1乾燥機構積層配置，藉由上述第1搬送機 構及上述第2搬送機構而將上述基板搬入或搬出。 又，技術方案3之發明係如技術方案2之基板處理裝置， 其中，更包括第2乾燥機構，其進行對藉由上述塗佈機構而 得到塗佈之上述基板進行乾燥處理之步驟中之至少一部分 即第2乾燥步驟’且上述第2乾燥機構、及上述第1乾燥機構 係配置於以上述第2搬送機構為中心之同心圓上。 又，技術方案4之發明係如技術方案3之基板處理裝置， 其中，上述第1乾燥步驟包含對藉由上述塗佈機構而塗佈於 上述基板上之塗佈液進行減壓乾燥之減壓乾燥步驟，上述 第2乾燥步驟包含對上述基板加熱之加熱步驟。 又’技術方案5之發明係如技術方案1至技術方案4中任一 技術方案之基板處理裝置，其中，藉由上述第丨狹縫喷嘴而 塗佈之處理液與藉由上述第2狹縫噴嘴而塗佈之處理液為 具有不同組成的處理液。 [發明之效果] 根據本發明，可防止裝置尺寸之長大化，並且能夠以簡 單之構成於藉由第1狹縫喷嘴而塗佈於基板上之處理液之 層的上表面上，形成藉由第2狭縫噴嘴而塗佈之處理液之 層。又，當僅藉由第1狹縫喷嘴塗佈處理液時，亦可不經由 藉由第2狹縫噴嘴塗佈處理液之機構而將基板搬送至下一 步驟’因此，基板之處理片數提高。 尤其，根據技術方案2之發明，利用第2搬送機構將已藉 由第1乾燥機構進行乾燥步驟之基板搬送至待機機構，藉此 J524l3.doc 201130572 可於進行乾燥步驟之期間内利用塗佈機構進行下—個基板 之2佈，從而提高基板處理裝置之處理性能。 *尤其，根據技術方案3之發明，可利用第2搬送機構將已 藉由第1乾燥機構進行乾燥步驟之基板迅速搬入至第2乾燥 機構，從而提高基板處理裝置至處理性能。 尤其，根據技術方案4之發明，可藉由第丨乾燥步驟使利 用塗佈機構所塗佈之處理液大致乾燥，其後，藉由第2乾燥 步驟使該處理液確實地乾燥，從而提高基板處理裝置之處 理性能。 尤其，根據技術方案5之發明，於由第丨狹縫喷嘴所塗佈 之處理液之層的上表面形成組成不同之層，藉此可形成具 有各種效果之薄膜。 【實施方式】 以下，一面參照隨附之圖式，一面詳細地說明本發明之 較佳之實施形態。 圖1係表示具備本發明之基板處理裝置1〇〇之基板處理系 統的圆。 再者，於圖1中，為便於圖示及說明，將z軸方向定義為 表示鉛垂方向者，將χγ平面定義為表示水平面者，但鵁等 係為把握位置關係而權宜定義者，並不限定以下所說明之 各方向。以下之圖亦相同。 於基板處理系統中’將用於製造液晶顯示裝置之畫面面 板之方形玻璃基板作為被處理基板90。 基板處理系統包括：搬入要處理之基板9〇之搬入部81、 152413.doc 201130572 清洗基板90而使其清潔化之清洗部82 '以及將基板9〇調節 為特定之溫度之調溫部83 »由調溫部83調整為特定之溫度 之基板90被搬入至基板處理裝置1〇〇中。將該等搬入至基板 處理裝置100為止之步驟稱作前處理步驟。 又，基板處理系統包括：移載部84，其暫時保管藉由基 板處理裝置100而形成有薄膜之基板90且將其轉移至曝光 部85 ;曝光部85，其對於基板90表面上之電路圖案等進行 曝光；顯影部86，其對經曝光之基板90進行顯影處理；檢 查部87 ’其檢查基板90 ;以及搬出部88，其搬出完成基板 處理系統中之處理之基板90。將該等搬入基板處理裝置1〇〇 後之步驟稱作後處理步驟。 再者，該等前處理步驟、及後處理步驟可根據形成於基 板90上之電路等而適當選擇，因此並不限定於上述實施例。 基板處理裝置100包括：對基板90之表面塗佈處理液之塗 佈部1 ;使由塗佈部1所塗佈之處理液乾燥之乾燥部4;以及 對塗佈有處理液之基板進行加熱及冷卻之熱處理部5、熱處 理部6。又，基板處理裝置丨00包括：於塗佈部丨與乾燥部4 之間搬送基板90之搬送單元2;以及於乾燥部4與熱處理部 5、6之間搬送基板90之搬送單元卜如此，基板處理裝置1〇〇 係基板處理系統中於基板90之表面形成薄膜之塗佈部’係 作為前處理步驟之藉由搬送單元2自調溫部83取出基板9〇 並進行各處理後，藉由搬送單元3將基板搬出至移載部84 的裝置。 其次，進行基板處理裝置100之各部分之說明。圖2係表 152413.doc 201130572 示塗佈部1之圖。 塗佈部1包括平台15，其係作為用於載置並保持被處理基 =90之保持台而發揮功能’並且亦作為附屬之各機構之基 台而發揮功能者。平台15係長方體形狀之石製，其上表面 及側面被加工成平坦面。 於平。15之上表面設置有基板9〇之保持面i4。保持面μ 係水平地形成，且分佈形成有多個真空吸附口（未圖示）。而 且，該真空吸附口係藉由於在塗佈部i中處理基板9〇之期間 内吸附基板90，而將基板90保持於特定之水平位置。 又，平台15之保持面14具備複數個頂銷LP，該頂銷[PM z軸方向上進退，藉此可將基板9 0載置於保持面丨4或使其上 升至特疋之尚度位置為止。 於平台15之上表面之（_γ)側固設有移動軌道13a，於（+γ) 側固設有移動軌道13t^移動軌道133、13b均配置成長度方 向沿X軸方向’且具有引導下述之架橋構造12之移動的 功能。 於平台15之上方設置有自該平台15之兩側部分起大致水 平地架設的架橋構造11、12。 架橋構造11主要包括：以碳纖維樹脂為骨材之喷嘴支持 部110、以及支持其兩端之升降機構112、U3。同樣地，架 橋構造12主要包括：以碳纖維樹脂為骨材之噴嘴支持部 120、以及支持其兩端之升降機構122、123。 於喷嘴支持部110、120上分別安裝有狹縫喷嘴^卜121。 即’基板處理裝置100具備於水平Y軸方向上延伸之2個狹縫 152413.doc 201130572 喷嘴 Ul、121。 而且，如圖2中示意性地表示般，於狹縫噴嘴丨丨丨上連接 有包括儲存機構162、泵161、以及供給配管163(圖2中虛線 所不）之噴出機構16。同樣地，於狹縫喷嘴121上連接有包 括儲存機構172、泵171、以及供給配管173(圖2中虛線所示） 之喷出機構1 7。 狹縫喷嘴111、121於噴出前端部設置有狹縫（未圖示），而 成為如下之構造：若藉由泵16卜及171供給儲存機構162、 1 72中所儲存之塗佈液，則自各個狹縫喷出塗佈液之結構。 再者，於該實施例中，儲存機構1 62、及儲存機構丨72中 所儲存之塗佈液係組成不同者，但不一定必需為不同之組 成，亦可為相同之組成。 升降機構112、113係分開配置於架橋構造^之兩侧，藉 由噴嘴支持部no而與狹縫噴嘴m連結。升降機構112、U3 使狹縫喷嘴1U並行地升降，並且亦可用於調整狹縫噴嘴 ill於yz平面内之姿勢。同樣地，架橋構造12之升降機構 122、123使狹縫噴嘴121並行地升降，並且亦可用於調整狹 縫噴嘴121於YZ平面内之姿勢。 各升降機構112、113、122、123係連接有未圖示之線性 馬達。因此，架橋構造丨丨及以可藉由移動轨道13a及13b而 於規疋之方向（X方向）上驅動。因此，一面自各個狹縫噴出 塗佈液’一面藉由線性馬達使使狹縫噴嘴丨u、n 2於平台 1 5上沿X方向移動，藉此於基板9〇之主面上形成塗佈液之塗 佈膜。 152413.doc 201130572 又，於平台15之（+X)側及（-X)側設置有後述之清洗狹縫 喷嘴111、121之清洗機構、或待機箱等（省略圖示因此， 於狹縫噴嘴111不塗佈抗钮液時’架橋構造i i朝圖2所示之 (-X)側移動並待機。同樣地’於狹縫嘴嘴121不塗佈塗佈液 時’架橋構造12朝圖2所示之（+X)側移動並待機。 返回至圖卜搬送單元2係基板處理裝置丨〇〇中進行基板9〇 之搬送之單元。又，搬送單元3亦同樣為進行基板9〇之搬送 之單元》 圖3係表示搬送單元2之側視圖。又，圖4係表示搬送單元 2之平面圖。搬送單元2與搬送單元3同為多關節機器人，因 此使用搬送單元2為代表進行各部分之說明。 搬送單元2包括：用於固定搬送單元2之各構成之基台 21、支臂部22、升降機構23、旋轉機構29。 支臂部22包括：機械手221、第1支臂223及第2支臂224。 又’機械手221具備4個夾盤222。 於夾盤222上立設有未圖示之複數個支持銷。機械手221 係藉由設置於夾盤222上之複數個支持銷之前端抵接於基 板90之背面而自下方支持基板9〇。 第1支臂223及第2支臂224係與機械手221連結。藉由此種 構造’支臂部22伸縮自如，機械手221可於水平面内進退。 再者’對本實施形態中之搬送單元2僅於沿圖中X軸方向之 方向上進退進行了說明，但可藉由後述之旋轉機構29變更 機械手221之進退方向。於圖3及圖4所示之狀態下，用實線 表不朝（+X)方向進入之狀態，用虛線表示朝（_χ)方向退出之 152413.doc •10- 201130572 狀態。 升降機構23具備支持構件231及支柱構件232。安裝有支 臂部22之支持構件231係構成為藉由未圖示之直接作用機 構’而可沿支柱構件232於Z軸方向上升降。即，升降機構 23具有使支臂部22於Z軸方向上在特定之範圍内升降之功 能。 如此，藉由具備升降機構23,搬送單元2可使由機械手221 所支持之基板90朝Z軸方向移動。 旋轉機構29係具備未圖示之旋轉馬達，並使支臂部22及 升降機構23以軸〇為中心一體地旋轉之機構。即，旋轉機構 29具備調整支臂部22之進退方向之功能，例如，若旋轉機 構29自圖3所示之狀態起旋轉18〇。，則支臂部23成為向後之 狀態。即，成為朝（_χ)方向進入，朝（+χ)方向退出之狀態。 又，藉由旋轉機構29朝90。方向旋轉，支臂部22之進退方 向成為垂直於紙面之方向。 圖5係表示乾燥部4之圖。乾燥部4係使乾燥單元41、42 及待機單元43積層而構成。 乾燥單元41包括：蓋部411、腔室412及吸引機構413。乾 燥單41係作為對結束塗佈部丨中之處理之基板9〇進行乾 燥處理的單元而構成。 蓋部411係以平行於χγ平面之方式配置之板狀之構件， 由未圖不之框架支持。又，蓋部411如圖5中箭頭所示可 於Ζ軸方向上升降，於上方位置（圖5所示之位置）與下方位 置之間升降。再者’蓋部411於下方位置迎合腔室412。 152413.doc 201130572 腔室412係主要形成乾燥單元41中之處理室之構件。 於蓋部411之下表面及腔室412之上表面形成有凹部，藉 由蓋部411與腔室412相互迎合而形成密閉之處理空二 414。再者’處理空間414係形成為可充分收容水平姿勢之 基板90之大小之空間。 吸引機構413主要由使裝置外之空調裝置與處理空間川 連通之配管構成。藉由此種構造，於乾燥單元㈣可進行 減壓乾燥處理。 再者，雖然詳情並未圖示，但乾燥單元41具備自下方貫 通腔室412之複數個頂銷（未圖示）。而且，該複數個頂銷之 前端抵接於基板90之背面，藉此乾燥單元41自下方支持所 搬入之基板90。又，複數個頂銷能夠以支持基板9〇之狀態 升降，因此乾燥單元41可調整所搬入之基板9〇之2軸方向之 尚度位置。 乾燥單元42包括：蓋部42卜腔室422及吸引機構423，藉 由蓋部421與腔室422相互迎合而形成密閉之處理空間 424。如此，乾燥單元42具有與上述乾燥單元4丨相同之構 成，同為進行減壓乾燥處理之單元，因此省略詳細之說明。 再者，於本實施例中，乾燥單元41與乾燥單元42進行減壓 乾燥處理之壓力及時間等參數不同。 待機單元43係由下部框架431與銷432構成，下部框架431 係以平行於XY平面之方式構成。銷432係自下部框架43〖起 隔開特定之距離而用於載置基板9〇之構件。銷432係以支持 基板90之端部及中央部之方式配置於下部框架431上。藉由 1524l3.doc 〇 201130572 此種構成，可自下表面支持所搬入之基板9〇。 再者’於本實施例中，待機單元43係積層配置於乾燥單 元41及乾燥單元42之下部，但並不限定於此，具體而言， 待機單元43亦可積層配置於乾燥單元41及乾燥單元42之上 部。 圖6係表示乾燥部4 '搬送單元2、搬送單元3、及熱處理 部5之關係之侧視圖。 乾燥部4之框架（圖5及圖6中虛線所示）於（_χ)側及（+χ)側 具有較基板90之寬度更大之開口，因此，搬送單元2、及搬 送單元3可將基板90搬入至乾燥單元41、乾燥單元42、及待 機單元43之任一者中。同樣地’由乾燥單元4丨、乾燥單元 42、及待機單元43中之任一者所支持之基板90亦可藉由搬 送單元2或搬送單元3中之任一者搬出。 再者，配置於待機單元43上之銷43 2係配置於俯視下不干 擾機械手221之夾盤222之位置。藉由如此構成，可於待機 單元43與搬送單元2或搬送單元3之間進行基板90之交接。 又’熱處理部5及6係對藉由乾燥部4而減壓乾燥之基板9〇 進行加熱處理及冷卻處理之處理部》具體而言，其包括： 載置基板90且對基板90加熱之加熱單元51(以下稱作Hp)、 載置基板90且將藉由上述HP加熱之基板冷卻之冷卻單元 52(以下稱作CP)、以及緩衝器53(以下稱作BF)。 於圖6中，僅表示熱處理部5 ’但熱處理部6亦為相同之構 成，因此省略說明。 熱處理部5及6係以使上述HP、CP及BF與各處理相對應之 152413.doc •13- 201130572 方式適當積層而構成，搬送單元3係、㈣於積層配置於熱處 理部⑻之心^抑’進行基板默搬^搬出。 再者，上述塗佈部1、搬送單元2、搬送單元3、乾燥部4、 熱處理部5、熱處理部6係藉由未圖示之控制部而聯動地控 制。控制部可為基板處理裝置1〇〇單獨具備，亦可為基板處 理系統之控制部之一部分。控制部可使用一般之計算機， 亦可藉由組合有電子電路之基板而控制。 其次，使用圖7說明基板處理裝置1〇〇、及基板處理系統 之動作。 基板處理系統係藉由清洗部82對自搬入部81所搬入之基 板90進行清洗處理，藉由調溫部83對該基板9〇進行乾燥， 並將其調整為特定之溫度（步驟su :前處理結束）。 然後，基板處理裝置1〇〇驅動搬送單元2而自調溫部83取 出基板90，並將其搬入至塗佈部i。然後，藉由塗佈部i將 塗佈液A塗佈於基板90上（步驟S12:塗佈處理八卜具體而 3，控制部驅動塗佈部】之架橋構造〗丨而使其於基板9〇之上 方掃描移動，並且藉由驅動泵161而將儲存機構162中所儲 存之塗佈液A塗佈於基板9〇。 若完成塗佈處理A ’則搬送單元2將經塗佈之基板90搬送 至乾燥部4。此處，使用乾燥部4之乾燥單元41進行特定之 減壓乾燥處理（步驟S13 :減壓乾燥a)。藉由減壓乾燥處理 A，塗佈於基板9〇上之塗佈液A因大部分溶劑蒸發，而成為 乾燥至流動性消失之程度之狀態。 若完成減壓乾燥A，則搬送單元3將基板90搬送至熱處理 152413.doc •14- 201130572 部5 ^此處，利用熱處理部52Hp、cp及BF進行特定之熱處 理等（步驟S14 :熱處理A)。具體而言，將基板9〇搬送至積 層於熱處理部5之HP，進行特定之溫度及時間之加熱處理， 藉此使基板90上之塗佈液A進一步乾燥。結束加熱處理之基 板90同樣藉由搬送單元3而被搬送至Cp。於cp中，使藉由 加熱處理而蓄積於基板90中之熱逸出，並以可進行其後之 處理之方式恢復至常溫。恢復至常溫之基板被搬運至bf並 待機。此處之熱處理係根據塗佈液A之組成及所期望之膜厚 而適當組合後進行處理。 繼而，控制部判斷是否對該基板9〇進行連續處理（步驟 S15)。此處，所謂連續處理，係指於藉由上述塗佈處理a 至熱處理A所形成之層（此處稱作層A)之上表面形成新的層 B之處理。 圖8係藉由連續處理而於基板9〇之上表面積層形成有層a 及層B之圖。如此，藉由積層具有複數種組成之層，可形成 具有各種特性之層。又，藉由㈣成層A與層B之材料（塗佈 液）設定為相同之材料，亦可形成較藉由—次塗佈步驟可形 成之膜厚更厚之膜。此外，於該說明令說明形成2層之處 理，但亦可形成較2層更多之層。 於圖7之步驟S15中，判斷連續處理之有無，判斷為有（步 驟S15中為Yes)之基板9〇係藉由搬送單元]而自bf取出，並 被搬入至乾燥部4之待機單元43中（步驟S2i 搬送至待機 部）。然後，搬入至待機單元43中 而搬出，並被再次搬入至塗佈部i 之基板90藉由搬送單元2 。如此’藉由設置待機單 152413.doc •15· 201130572 疋43 ’可不經由乾燥部4之乾燥單元41及42，而自搬送單元 3針對搬送單元2進行基板90之交接。 塗佈部1對上表面形成有層A之狀態之基板90塗佈塗佈液 B(步驟S22 :塗佈處理B)。具體而言，控制部驅動塗佈部1 之架橋構造12而使其於基板90之上方掃描移動，並且藉由 驅動泵171而將儲存機構172中所儲存之塗佈液B塗佈於基 板90 〇 若完成塗佈處理B，則搬送單元2將經塗佈之基板9〇搬送 至乾燥部4。此處，利用乾燥部4之乾燥單元42，以與減壓 乾燥A不同之參數進行減壓乾燥處理B(步驟S23 :減壓乾燥 B)。藉由減壓乾燥處理B，塗佈於基板9〇上之塗佈液B因大 刀溶劑蒸發，而成為乾燥至流動性消失之程度之狀態。 若完成減壓乾燥B，則搬送單元3將基板90搬送至熱處理 部6。此處，利用熱處理部62Hp、cp及]31?進行特定之熱處 理等（步驟S24··熱處理B)。具體而言，將基板9〇搬送至熱 處°卩6之HP，進行特定之溫度及時間之加熱處理，藉此使 基板9〇上之塗佈液B進一步乾燥。結束加熱處理之基板9〇 同樣藉由搬送單元3而被搬送至熱處理部6iCp。於cp中， 使藉由加熱處理而蓄積於基板90之熱逸出，並以可進行其 後之處理之方式恢復至常溫。恢復至常溫之基板被搬運至6 之BF並待機。 藉由經過上述步驟，於基板9〇上形成層人及層b，並成為 於緩衝器53中待機之狀態。其後’受到來自曝光部85之指 示，搬送單元3將基板90搬入至移載部84(步驟Sl6:進入曝 152413.doc •16· 201130572 光步驟）。 又，於W 7之步驟Sls中，判斷連續處理之有無，判斷為 無（步驟S15中為No)之基板9〇仍然於熱處理部$之bf中待 機。而且，受到來自曝光部85之指示，藉由搬送單元3將基 板90搬入至移載部84(步驟S16:進入曝光步驟）。 如上所述’於本實施例之基板處理裝置1〇〇中，藉由具備 待機單元43,可暫且使搬送至下游之熱處理步驟之基板返 回至塗佈步驟。因此’ s易複數次地進行利用塗佈液之膜 形成。如此，藉由於形成層A之後連續地形成層B，可降低 在層A與層B之間混入雜質之可能性。又，藉由適當地選擇 塗佈液之種類及塗佈次數，可不進行裝置整體之佈局變更 而形成各種塗佈膜佈局。 以上，對本發明之實施形態進行了說明，但本發明並不 限定於上述實施形態，可進行各種變形。 例如’圖9係說明本發明之第2實施形態之基板處理系統 之動作的圖。於第2實施形態中’表示使用乾燥性較高之塗 佈液作為塗佈液之情形。 第2實施形態之基板處理系統與上述實施形態之基板處 理系統相同’對自搬入部81所搬入之基板90進行前處理動 作（步驟S111 :前處理完成）。 其後，藉由塗佈部1塗佈液A'塗佈於基板90上（步驟 S112 :塗佈處理A')。此時之塗佈液A，係使用與上述塗佈液 A相比乾燥性更高（=沸點更低）之溶劑。 若完成塗佈處理A，，則進行減壓乾燥處理（步驟S113 :減 5 152413.doc ,7 201130572 壓乾燥A')。由於塗佈液A'乾燥性較高，因此僅進行減壓乾 燥A'便成為大致乾燥之狀態。此處，利用乾燥部4之乾燥單 元41進行特定之減壓乾燥處理《藉由減壓乾燥處理A，，塗 佈於基板90上之塗佈液A，因溶劑蒸發而成為大致乾燥之狀 態。 當對形成有塗佈液A，之層之基板9〇選擇連續處理時（步 驟SU5中為Yes)，搬送單元2自乾燥單元41搬出基板9〇,並 將其再次搬入至塗佈部1中（步驟S121)。 其後，對搬入至塗佈部1中之上表面形成有塗佈液A，之層 之狀態的基板90塗佈塗佈液B，（步驟S122 :塗佈處理B,)。 若完成塗佈處理B·，則搬送單元2將經塗佈之基板9〇搬送 至乾燥部4(步驟S123 :減壓乾燥B，）。 若完成減壓乾燥B，，則藉由搬送單元3將基板9〇搬送至熱 處理部5進行熱處理（步驟Sll4:熱處理）。此處，塗佈㈣ 亦使用與塗佈液A，相同之乾燥性較高之塗佈液，藉此，可 避免其後之熱處理步驟。於此種情形時，不進行熱處理(步 驟S114)，搬送單元3將基板轉移至下游之曝光步驟。如 上所述，亦可藉由塗佈液之乾燥性而適當地省略熱處理步 驟。 再者，於第2實施形態中’步驟S121中藉由搬送單元2將 基板搬送至塗佈部1，但亦可藉由搬送單元3將基板90搬 出，並搬入至待機單.元43。#由利用搬送單元3，搬送單元 2可進行其他基板之搬送動作。 具體而言’於利用乾燥單元41對基板9〇進行減壓乾燥處 1524]3.d〇c •18- 201130572 理之期間内，塗佈則進行其他基板之塗佈動作。而且，藉 由搬送單W將基板90自乾燥單心搬送至待機單元Μ，並 且搬送單元2將其他基板搬入至乾燥單元41，可使基板處理 裝置100之處理片數提高。 處理之構成 又，於上述實施形態中，乾燥部4具備乾燥單元41及乾燥 單元42,但亦可為其中任H，於根據塗佈液之組成 而無需減壓乾燥步驟之情形時，亦可為制如待機單元般 僅載置基板之單元㈣乾燥單元41及乾燥單元仙行乾燥 又，熱處理部5及熱處理部6中具備複數個加埶單元η、 冷卻單⑶、及緩衝器53,但該等之配置及個數係作為設 计事項而適當決定。又，基板處理裝置_係使用具備孰處 理部5及熱處理部6之構成進行了說明，但熱處理部亦可為 其中任—者’㈣亦係作為設計事項而適當選擇之事項。 又於根據塗佈液之組成而無需加熱處理、冷卻處理之严 形時’亦可省略加熱單元51、冷卻單元52、及緩衝心。月 又，相對於乾燥部4,將搬送單元2及搬送單元地置於相 對之方向（180。方向），但並不限^於此。例如，如圖W所示 之基板^理裝置般，亦可相對於乾燥部4,將搬送單元^ 及搬送單元3配置於可接近之位置（例如9〇。方向）。 【圖式簡單說明】 圖1係表示基板處理系統之概略之圖； 圖2係表示塗佈裝置1之立體圖； 圖3係表示搬送單元2之側視圖，· I52413.doc -J9- 201130572 圖4係表示搬送單元2之平面圖； 圖5係表示乾燥部4之側視圖； 圖6係表示乾燥部4、搬送單元2、搬送單元3、熱處理部5 之關係之側視圖； 圖7係表示基板處理裝置100、及基板處理系統之動作之 圖； 圖8係於基板90之上表面形成層a及層B後之圖； 圖9係表示第2實施形態之基板處理裝置1〇〇、及基板處理 系統之動作之圖； 圖1 〇係表示其他實施形態之基板處理裝置丨00,之概略之 圖；及 圖11係表示先前之基板處理系統之概略之圖。 【主要元件符號說明】 1 2 4 11、12 13a、13b 14 15 16、17 21 22 塗佈裝置 搬送單元 乾燥部 熱處理部 架橋構造 移動軌道 保持面 平台 喷出機構 基台 支臂部 1524\3.doc •20. 201130572 23 、 112 、 113 、 122 、 123 升降機構 29 旋轉機構 41、42 乾燥單元 43 待機單元 51、HP 加熱單元 52 ' CP 冷卻單元 53、BF 緩衝器 1 81 搬入部 82 清洗部 83 調溫部 84 移載部 85 曝光部 86 顯影部 87 檢查部 88 搬出部 90 基板 100 ' 100' 基板處理裝置 110 、 120 噴嘴支持部 111 、 121 狹縫喷嘴 161 、 171 泵 162 、 172 儲存機構 163 、 173 供給配管 221 機械手 222 夾盤 152413.doc 21 201130572 223 第1支臂 224 第2支臂 231 支持構件 232 支柱構件 411 、 421 蓋部 412 ' 422 腔室 413 、 423 吸引機構 414 ' 424 處理空間 431 下部框架 432 銷 LP 頂銷 152413.doc -22-BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for forming a plurality of thin film layers in a substrate processing apparatus having a slit nozzle. [Prior Art] Since the prior art, a substrate processing apparatus which ejects a processing liquid from a slit nozzle and forms a thin film on the surface of the substrate has been proposed. For example, Patent Document 1 describes a substrate processing apparatus that ejects a processing liquid from a slit nozzle to a substrate. [Prior Art Document] [Patent Document 1] [Patent Document 1] JP-A-2007-287914 SUMMARY OF INVENTION [Problems to be Solved by the Invention] Generally, when a slit nozzle is used to form a film on a substrate At this time, a film is formed by subjecting the substrate coated with the treatment liquid to drying under reduced pressure and heat treatment (heating and cooling). Therefore, when a plurality of thin film layers are formed, the cycle of coating-drying-heat treatment is repeated a certain number of times, which inevitably increases the length of the device (refer to Fig. 11). Further, 'in the above-described device configuration', there is a problem that even when a specific step is selected only in a plurality of steps sequentially arranged, if the step portion is not passed through unnecessary processing, the subsequent processing cannot be reached. step. Therefore, there is a reduction in the number of substrates processed as a whole. The present invention has been made in view of the above problems, and an object of the invention is to provide a substrate processing apparatus for forming a plurality of thin film layers, which is 152413.doc 201130572. The total length of the apparatus is known and the number of processed sheets is reduced. [Means for Solving the Problems] In order to solve the above problems, the invention of the present invention is a substrate processing apparatus which is formed by applying a specific processing liquid to a substrate to form a coating film, and is characterized in that it includes a coating mechanism. a first and second slit nozzles, and a mounting mechanism on which the substrate is horizontally placed, and the substrate is placed on the mounting mechanism by scanning and moving the substrate on the mounting mechanism a top surface coating treatment liquid; a squeezing drying mechanism for performing at least a part of a step of drying the substrate coated by the coating means; the first drying step; and a second conveying step; Carrying the substrate coated by the coating mechanism into the second drying mechanism; and a control mechanism that controls the coating mechanism, the first drying mechanism, and the first conveying mechanism; and the coating The mechanism and the second drying mechanism are disposed on a concentric circle centered on the i-th conveying mechanism, and the control mechanism is used by the conveying mechanism After the first slit nozzle of the cloth mechanism is applied to the first drying mechanism to carry out the first drying step, the substrate is placed on the mounting mechanism of the coating mechanism again. The upper surface of the layer of the treatment liquid applied to the first slit nozzle is coated with a treatment liquid by an area substantially the same as the layer by the second slit nozzle. According to a second aspect of the invention, the substrate processing apparatus of the first aspect of the invention, further comprising: a second transport mechanism that transports the substrate to the first drying mechanism by the first transport mechanism, (1) the drying mechanism is carried out on a surface different from the surface facing the first conveying mechanism; and the standby unit 152413.doc 201130572 is configured to be stacked with the first drying mechanism, and the first conveying mechanism and the second The substrate is carried in or carried out by the transport mechanism. The invention according to claim 2, further comprising a second drying mechanism that performs at least one of a step of drying the substrate coated by the coating mechanism. The second drying step is a part of the second drying step, and the first drying mechanism and the first drying mechanism are disposed on a concentric circle centered on the second conveying mechanism. According to a fourth aspect of the invention, in the substrate processing apparatus of the third aspect, the first drying step includes depressurizing the coating liquid applied to the substrate by the coating mechanism under reduced pressure drying. In the drying step, the second drying step includes a heating step of heating the substrate. The substrate processing apparatus according to any one of the first aspect to the fourth aspect, wherein the processing liquid applied by the second slit nozzle and the second slit are used The treatment liquid coated by the nozzles is a treatment liquid having a different composition. [Effect of the Invention] According to the present invention, it is possible to prevent the size of the device from being increased, and it is possible to form a simple structure on the upper surface of the layer of the treatment liquid applied to the substrate by the first slit nozzle. The layer of the treatment liquid applied by the second slit nozzle. Further, when the processing liquid is applied only by the first slit nozzle, the substrate can be transported to the next step without passing through the mechanism for applying the processing liquid by the second slit nozzle. Therefore, the number of processed substrates is improved. . In particular, according to the invention of claim 2, the substrate that has been subjected to the drying step by the first drying means is transported to the standby mechanism by the second transport mechanism, whereby the coating mechanism can be used during the drying step in J524l3.doc 201130572. Two fabrics of the next substrate are processed to improve the processing performance of the substrate processing apparatus. In particular, according to the invention of claim 3, the second transport mechanism can quickly carry the substrate that has been dried by the first drying mechanism into the second drying mechanism, thereby improving the substrate processing apparatus to the processing performance. In particular, according to the invention of claim 4, the treatment liquid applied by the coating means can be substantially dried by the second drying step, and then the treatment liquid can be surely dried by the second drying step, thereby improving the substrate. Processing performance of the processing device. In particular, according to the invention of claim 5, a layer having a different composition is formed on the upper surface of the layer of the treatment liquid applied by the second slit nozzle, whereby a film having various effects can be formed. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a view showing a circle having a substrate processing system of the substrate processing apparatus 1 of the present invention. In FIG. 1, for convenience of illustration and description, the z-axis direction is defined as a vertical direction, and the χ γ plane is defined as a horizontal plane, but the system is defined as a positional relationship, and The directions described below are not limited. The figures below are also the same. In the substrate processing system, a square glass substrate for manufacturing a screen panel of a liquid crystal display device is used as the substrate 90 to be processed. The substrate processing system includes a loading unit 81 that carries in the substrate to be processed, a 152413.doc 201130572 cleaning unit 82 that cleans the substrate 90 and cleans it, and a temperature adjustment unit that adjusts the substrate 9A to a specific temperature. The substrate 90 adjusted to a specific temperature by the temperature adjustment unit 83 is carried into the substrate processing apparatus 1A. The step of carrying these into the substrate processing apparatus 100 is referred to as a pre-processing step. Further, the substrate processing system includes a transfer portion 84 that temporarily stores the substrate 90 on which the thin film is formed by the substrate processing apparatus 100 and transfers it to the exposure portion 85; the exposure portion 85 for the circuit pattern on the surface of the substrate 90 The exposure unit 86 performs development processing on the exposed substrate 90, and the inspection unit 87' inspects the substrate 90 and the carry-out portion 88, which carries out the substrate 90 processed in the substrate processing system. The step of carrying the substrates into the substrate processing apparatus 1 is referred to as a post-processing step. Further, the pre-processing steps and the post-processing steps can be appropriately selected depending on the circuit or the like formed on the substrate 90, and thus are not limited to the above embodiments. The substrate processing apparatus 100 includes a coating unit 1 that applies a processing liquid to the surface of the substrate 90, a drying unit 4 that dries the processing liquid applied by the coating unit 1, and a substrate that is coated with the processing liquid. And the heat treatment unit 5 and the heat treatment unit 6 that are cooled. Further, the substrate processing apparatus 丨00 includes a transport unit 2 that transports the substrate 90 between the application unit 丨 and the drying unit 4, and a transport unit that transports the substrate 90 between the drying unit 4 and the heat treatment units 5 and 6, In the substrate processing apparatus 1 , the coating portion for forming a thin film on the surface of the substrate 90 in the substrate processing system is used as a pre-processing step, and the substrate 9 is taken out from the temperature adjustment unit 83 by the transfer unit 2, and each process is performed. The apparatus that carries the substrate out to the transfer unit 84 by the transport unit 3. Next, a description will be given of each part of the substrate processing apparatus 100. Fig. 2 is a diagram showing the coating unit 1 in 152413.doc 201130572. The coating unit 1 includes a platform 15 that functions as a base for placing and holding a holding table of a processing base of 90, and functions as a base of each of the attached mechanisms. The platform 15 is made of a stone having a rectangular parallelepiped shape, and its upper surface and side surfaces are processed into a flat surface. Yu Ping. The upper surface of 15 is provided with a holding surface i4 of the substrate 9A. The holding surface μ is formed horizontally, and a plurality of vacuum suction ports (not shown) are formed in the distribution. Further, the vacuum adsorption port holds the substrate 90 at a specific horizontal position by adsorbing the substrate 90 during the processing of the substrate 9 in the coating portion i. Further, the holding surface 14 of the stage 15 is provided with a plurality of top pins LP which are advanced and retracted in the PM z-axis direction, whereby the substrate 90 can be placed on the holding surface 丨4 or raised to a special degree. Position up to now. A moving rail 13a is fixed on the (_γ) side of the upper surface of the platform 15, and a moving rail 13t is fixed on the (+γ) side. The moving rails 133 and 13b are disposed in the longitudinal direction along the X-axis direction and have guidance. The function of the movement of the bridge structure 12 is described. Above the platform 15, there are provided bridge structures 11, 12 which are substantially horizontally erected from the side portions of the platform 15. The bridging structure 11 mainly includes a nozzle supporting portion 110 having a carbon fiber resin as an aggregate, and lifting mechanisms 112 and U3 supporting both ends thereof. Similarly, the bridge structure 12 mainly includes a nozzle support portion 120 having carbon fiber resin as an aggregate, and lifting mechanisms 122, 123 supporting both ends thereof. A slit nozzle 121 is attached to each of the nozzle support portions 110 and 120. That is, the substrate processing apparatus 100 includes two slits 152413.doc 201130572 nozzles Ul and 121 extending in the horizontal Y-axis direction. Further, as schematically shown in Fig. 2, a discharge mechanism 16 including a storage mechanism 162, a pump 161, and a supply pipe 163 (not shown by a broken line in Fig. 2) is connected to the slit nozzle 。. Similarly, a discharge mechanism 17 including a storage mechanism 172, a pump 171, and a supply pipe 173 (shown by a broken line in Fig. 2) is connected to the slit nozzle 121. The slit nozzles 111 and 121 are provided with a slit (not shown) at the discharge tip end portion, and have a structure in which the coating liquid stored in the storage mechanisms 162 and 1 72 is supplied by the pump 16 and 171, The structure of the coating liquid is ejected from each slit. Further, in this embodiment, the coating means stored in the storage means 1 62 and the storage means 72 are different in composition, but they do not necessarily have to be different compositions or the same composition. The elevating mechanisms 112 and 113 are disposed on both sides of the bridging structure, and are coupled to the slit nozzle m by the nozzle supporting portion no. The elevating mechanisms 112 and U3 raise and lower the slit nozzle 1U in parallel, and can also be used to adjust the posture of the slit nozzle ill in the yz plane. Similarly, the elevating mechanisms 122, 123 of the bridging structure 12 cause the slit nozzles 121 to be raised and lowered in parallel, and can also be used to adjust the posture of the slit nozzles 121 in the YZ plane. A linear motor (not shown) is connected to each of the elevating mechanisms 112, 113, 122, and 123. Therefore, the bridge structure is driven in the direction (X direction) in which the rails 13a and 13b can be moved. Therefore, while the coating liquid "is ejected from each slit", the slit nozzles 丨u, n 2 are moved in the X direction on the stage 15 by a linear motor, thereby forming a coating on the main surface of the substrate 9 Liquid coating film. 152413.doc 201130572 Further, a cleaning mechanism for washing the slit nozzles 111 and 121 to be described later, or a standby box or the like is provided on the (+X) side and the (-X) side of the stage 15 (the illustration is omitted. When the anti-button liquid is not applied to the 111, the bridging structure ii moves toward the (-X) side shown in Fig. 2 and stands by. Similarly, 'when the slit nozzle 121 is not coated with the coating liquid', the bridging structure 12 is directed to Fig. 2 The (+X) side shown is moved and stands by. Returning to the unit of the substrate transfer processing unit 2, the substrate 9 is transported. The transport unit 3 also performs the transport of the substrate 9 Fig. 3 is a side view showing the transport unit 2. Fig. 4 is a plan view showing the transport unit 2. Since the transport unit 2 and the transport unit 3 are multi-joint robots, the transport unit 2 is used as a representative for each part. The transport unit 2 includes a base 21 for fixing the transport unit 2, an arm portion 22, an elevating mechanism 23, and a rotating mechanism 29. The arm portion 22 includes a robot 221 and a first arm 223. The second arm 224. The 'manipulator 221 has four chucks 222. The chuck 222 A plurality of support pins (not shown) are provided, and the robot 221 supports the substrate 9A from the lower side by abutting the front ends of the plurality of support pins provided on the chuck 222 against the back surface of the substrate 90. The 223 and the second arm 224 are coupled to the robot 221. With the above-described structure, the arm portion 22 is expandable and contractible, and the robot 221 can advance and retreat in the horizontal plane. Further, the transport unit 2 in the present embodiment is only along the edge. Although the advance and retreat in the direction of the X-axis direction has been described in the drawing, the direction of advancement and retreat of the manipulator 221 can be changed by the rotation mechanism 29 which will be described later. In the state shown in Figs. 3 and 4, the solid line is not directed (+ X) direction in which the direction is entered, with the dotted line indicating the state of 152413.doc •10-201130572 exiting in the (_χ) direction. The elevating mechanism 23 is provided with the support member 231 and the strut member 232. The support member 231 to which the arm portion 22 is attached is configured The lift mechanism 23 has a function of raising and lowering the arm portion 22 in a specific range in the Z-axis direction by the direct acting mechanism (not shown) in the Z-axis direction. , by carrying the lifting mechanism 23, transporting In the element 2, the substrate 90 supported by the robot 221 is moved in the Z-axis direction. The rotation mechanism 29 is provided with a rotation motor (not shown), and the arm portion 22 and the elevating mechanism 23 are integrally rotated about the axis. In other words, the rotation mechanism 29 has a function of adjusting the advancing and retracting direction of the arm portion 22. For example, when the rotation mechanism 29 is rotated 18 自 from the state shown in Fig. 3, the arm portion 23 is in a backward state. It is in a state of entering in the direction of (_χ) and exiting in the direction of (+χ). Further, it is turned to 90 by the rotating mechanism 29. When the direction is rotated, the advancing and retracting direction of the arm portion 22 becomes a direction perpendicular to the plane of the paper. Fig. 5 is a view showing the drying unit 4. The drying unit 4 is configured by laminating the drying units 41 and 42 and the standby unit 43. The drying unit 41 includes a lid portion 411, a chamber 412, and a suction mechanism 413. The dry sheet 41 is configured as a unit for drying the substrate 9〇 which has been subjected to the treatment in the coating unit. The lid portion 411 is a plate-like member disposed parallel to the χγ plane, and is supported by a frame not shown. Further, the lid portion 411 can be raised and lowered in the direction of the yaw axis as indicated by an arrow in Fig. 5, and is raised and lowered between the upper position (the position shown in Fig. 5) and the lower direction. Further, the cover portion 411 meets the chamber 412 at a lower position. 152413.doc 201130572 The chamber 412 is primarily a member of the processing chamber in the drying unit 41. A concave portion is formed on the lower surface of the lid portion 411 and the upper surface of the chamber 412, and the lid portion 411 and the chamber 412 are brought into contact with each other to form a sealed processing space 414. Further, the processing space 414 is formed as a space in which the size of the substrate 90 in the horizontal posture can be sufficiently accommodated. The suction mechanism 413 is mainly constituted by a pipe that connects the air conditioner outside the device to the processing space. With this configuration, the drying unit (4) can be subjected to a reduced-pressure drying treatment. Further, although the details are not shown, the drying unit 41 is provided with a plurality of top pins (not shown) that pass through the chamber 412 from below. Further, the front end of the plurality of top pins abuts against the back surface of the substrate 90, whereby the drying unit 41 supports the loaded substrate 90 from below. Further, since the plurality of top pins can be raised and lowered in a state in which the support substrate 9 is supported, the drying unit 41 can adjust the position of the two-axis direction of the substrate 9 that is loaded. The drying unit 42 includes a lid portion 42 and a suction chamber 423, and the lid portion 421 and the chamber 422 converge to form a sealed processing space 424. As described above, the drying unit 42 has the same configuration as that of the above-described drying unit 4, and is also a unit for performing the vacuum drying treatment, and thus detailed description thereof will be omitted. Further, in the present embodiment, the parameters such as the pressure and time during which the drying unit 41 and the drying unit 42 perform the vacuum drying treatment are different. The standby unit 43 is constituted by a lower frame 431 and a pin 432, and the lower frame 431 is configured to be parallel to the XY plane. The pin 432 is a member for placing the substrate 9A apart from the lower frame 43 by a predetermined distance. The pin 432 is disposed on the lower frame 431 so as to support the end portion and the center portion of the substrate 90. With the configuration of 1524l3.doc 〇 201130572, the substrate 9 into which the substrate is carried can be supported from the lower surface. In the present embodiment, the standby unit 43 is disposed on the lower portion of the drying unit 41 and the drying unit 42. However, the present invention is not limited thereto. Specifically, the standby unit 43 may be stacked on the drying unit 41 and dried. Above unit 42. Fig. 6 is a side view showing the relationship between the drying unit 4' conveying unit 2, the conveying unit 3, and the heat treatment unit 5. The frame of the drying unit 4 (shown by broken lines in FIGS. 5 and 6) has openings larger than the width of the substrate 90 on the (_χ) side and the (+χ) side, so that the conveying unit 2 and the conveying unit 3 can be The substrate 90 is carried into any one of the drying unit 41, the drying unit 42, and the standby unit 43. Similarly, the substrate 90 supported by either the drying unit 4, the drying unit 42, and the standby unit 43 can be carried out by any of the transport unit 2 or the transport unit 3. Further, the pin 43 2 disposed on the standby unit 43 is disposed at a position where the chuck 222 of the robot 221 is not disturbed in plan view. According to this configuration, the substrate 90 can be transferred between the standby unit 43 and the transport unit 2 or the transport unit 3. Further, the heat treatment units 5 and 6 are a treatment unit that heat-treats and cools the substrate 9 that is dried under reduced pressure by the drying unit 4. Specifically, the method includes: heating the substrate 90 while mounting the substrate 90 The unit 51 (hereinafter referred to as Hp), a cooling unit 52 (hereinafter referred to as CP) that mounts the substrate 90 and cools the substrate heated by the HP, and a buffer 53 (hereinafter referred to as BF). In Fig. 6, only the heat treatment portion 5' is shown, but the heat treatment portion 6 is also the same, and therefore the description thereof is omitted. The heat treatment units 5 and 6 are configured by laminating the above-mentioned HP, CP, and BF in a manner corresponding to each process, and the transfer unit 3 and (4) are disposed in the heat treatment unit (8). 'The substrate is moved silently and moved out. Further, the application unit 1, the transport unit 2, the transport unit 3, the drying unit 4, the heat treatment unit 5, and the heat treatment unit 6 are controlled in conjunction with each other by a control unit (not shown). The control unit may be provided separately for the substrate processing apparatus 1 or may be part of the control unit of the substrate processing system. The control unit can be controlled by a general computer or by a substrate in which an electronic circuit is combined. Next, the operation of the substrate processing apparatus 1 and the substrate processing system will be described with reference to Fig. 7 . In the substrate processing system, the substrate 90 loaded from the loading unit 81 is cleaned by the cleaning unit 82, and the substrate 9 is dried by the temperature adjustment unit 83, and is adjusted to a specific temperature (step su: before Processing ends). Then, the substrate processing apparatus 1 drives the transport unit 2, takes out the substrate 90 from the temperature adjustment unit 83, and carries it into the coating unit i. Then, the coating liquid A is applied onto the substrate 90 by the coating portion i (step S12: the coating process is specifically performed, and the control portion drives the coating portion). The scanning movement is performed above the crucible, and the coating liquid A stored in the storage mechanism 162 is applied to the substrate 9 by driving the pump 161. If the coating process A' is completed, the conveying unit 2 applies the coated substrate 90. The drying unit 4 is transported to the drying unit 4. Here, the drying unit 41 of the drying unit 4 is used to perform a specific vacuum drying treatment (step S13: drying under pressure a). The coating A is applied to the substrate 9 by a vacuum drying treatment A. The coating liquid A is in a state where it is dried until the fluidity is lost because most of the solvent evaporates. When the vacuum drying A is completed, the transport unit 3 transports the substrate 90 to the heat treatment 152413.doc •14-201130572 Part 5^ Specifically, heat treatment is performed by the heat treatment portions 52Hp, cp, and BF (step S14: heat treatment A). Specifically, the substrate 9 is transported to HP stacked in the heat treatment portion 5, and heat treatment is performed at a specific temperature and time. Thereby, the coating liquid A on the substrate 90 is further dried. The substrate 90 that has been subjected to the heat treatment is also transported to Cp by the transport unit 3. In cp, the heat accumulated in the substrate 90 by the heat treatment is released, and is restored in a manner that can be thereafter processed. The substrate returned to normal temperature is transported to bf and stands by. The heat treatment here is appropriately combined according to the composition of the coating liquid A and the desired film thickness. Then, the control unit determines whether or not the substrate 9 is 〇Continuous treatment (step S15). Here, the continuous treatment refers to the formation of a new layer B on the upper surface of the layer formed by the coating treatment a to the heat treatment A (herein referred to as layer A). Fig. 8 is a view showing a layer a and a layer B formed on a surface layer of a substrate 9 by continuous processing. Thus, a layer having a plurality of layers can be formed by laminating a layer having a plurality of layers. By (4) the material of the layer A and the layer B (coating liquid) are set to the same material, a film having a thicker film thickness than that formed by the coating step can be formed. Further, the description is made in the description. 2 layers of processing, but can also form In step S15 of FIG. 7, it is determined whether or not the continuous processing is present, and it is determined that the substrate 9 (Yes in step S15) is taken out from bf by the transport unit], and is carried in to In the standby unit 43 of the drying unit 4 (step S2i is transported to the standby unit). Then, it is carried into the standby unit 43 and carried out, and is carried again to the substrate 90 of the coating unit i by the transport unit 2. Thus The standby unit 152413.doc •15·201130572 疋43′ can be transferred from the transport unit 2 to the transport unit 2 without passing through the drying units 41 and 42 of the drying unit 4. The coating unit 1 has a layer formed on the upper surface. The substrate 90 in the state of A is applied with the coating liquid B (step S22: coating treatment B). Specifically, the control unit drives the bridge structure 12 of the application unit 1 to scan and move over the substrate 90, and applies the coating liquid B stored in the storage mechanism 172 to the substrate 90 by driving the pump 171. When the coating process B is completed, the transport unit 2 transports the coated substrate 9 to the drying unit 4 . Here, the drying unit 42 of the drying unit 4 performs the reduced-pressure drying treatment B with a parameter different from the reduced-pressure drying A (step S23: drying under reduced pressure B). By the drying under reduced pressure B, the coating liquid B applied to the substrate 9 is dried to a state where the fluidity disappears due to evaporation of the solvent. When the vacuum drying B is completed, the transport unit 3 transports the substrate 90 to the heat treatment unit 6. Here, specific heat treatment or the like is performed by the heat treatment portions 62Hp, cp, and 31? (step S24 · heat treatment B). Specifically, the substrate 9 is transported to the HP of the heat chamber 6 and subjected to heat treatment at a specific temperature and time to further dry the coating liquid B on the substrate 9 . The substrate 9 that has been subjected to the heat treatment is also transported to the heat treatment portion 6iCp by the transport unit 3. In cp, the heat accumulated in the substrate 90 by the heat treatment is released, and is returned to the normal temperature in such a manner as to be able to be processed thereafter. The substrate returned to normal temperature is transported to BF of 6 and stands by. By the above steps, the layer person and the layer b are formed on the substrate 9A, and the buffer 53 is in a standby state. Thereafter, the conveyance unit 3 carries the substrate 90 to the transfer unit 84 by the instruction from the exposure unit 85 (step S16: entering the exposure 152413.doc •16·201130572 light step). Further, in step S1 of W7, it is judged whether or not the continuous processing is present, and the substrate 9 which is determined to be absent (No in step S15) is still in the bf of the heat treatment portion $. Then, the substrate 90 is carried into the transfer unit 84 by the transport unit 3 in response to an instruction from the exposure unit 85 (step S16: entering the exposure step). As described above, in the substrate processing apparatus 1 of the present embodiment, by providing the standby unit 43, the substrate transferred to the downstream heat treatment step can be temporarily returned to the coating step. Therefore, the film formation by the coating liquid is carried out several times. Thus, by continuously forming the layer B after the formation of the layer A, the possibility of mixing impurities between the layer A and the layer B can be reduced. Further, by appropriately selecting the type of the coating liquid and the number of application times, various coating film layouts can be formed without changing the layout of the entire apparatus. Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made. For example, Fig. 9 is a view for explaining the operation of the substrate processing system according to the second embodiment of the present invention. In the second embodiment, 'the case where a coating liquid having a high drying property is used as a coating liquid is used. The substrate processing system of the second embodiment is the same as the substrate processing system of the above-described embodiment. The pre-processing operation is performed on the substrate 90 carried in from the loading unit 81 (step S111: pre-processing is completed). Thereafter, the coating liquid A' is applied onto the substrate 90 by the coating portion 1 (step S112: coating treatment A'). In the coating liquid A at this time, a solvent having higher drying property (= lower boiling point) than the above-mentioned coating liquid A is used. When the coating treatment A is completed, the vacuum drying treatment is performed (step S113: minus 5 152413.doc, 7 201130572 pressure drying A'). Since the coating liquid A' has a high drying property, only the pressure-drying A' is dried to a substantially dry state. Here, the drying unit 41 of the drying unit 4 performs a specific vacuum drying treatment. The coating liquid A applied to the substrate 90 by the vacuum drying treatment A is substantially dried by evaporation of the solvent. When the continuous processing is selected for the substrate 9 of the layer on which the coating liquid A is formed (Yes in step SU5), the conveying unit 2 carries out the substrate 9 from the drying unit 41, and carries it again into the coating unit 1. (Step S121). Then, the coating liquid B is applied to the substrate 90 in a state in which the coating liquid A is formed on the upper surface of the coating unit 1 (step S122: coating treatment B). When the coating process B· is completed, the transport unit 2 transports the coated substrate 9 to the drying unit 4 (step S123: decompression drying B). When the vacuum drying B is completed, the substrate 9 is transported to the heat treatment unit 5 by the transfer unit 3 to perform heat treatment (step S114: heat treatment). Here, the coating (IV) is also the same as the coating liquid A, and the coating liquid having a higher drying property is used, whereby the subsequent heat treatment step can be avoided. In this case, heat treatment is not performed (step S114), and the transport unit 3 transfers the substrate to the downstream exposure step. As described above, the heat treatment step can be appropriately omitted by the drying property of the coating liquid. In the second embodiment, the substrate is transported to the coating unit 1 by the transport unit 2 in step S121. However, the substrate 90 may be carried out by the transport unit 3 and carried into the standby unit 43. # By the transport unit 3, the transport unit 2 can perform other substrate transport operations. Specifically, the substrate 9 is dried under reduced pressure by the drying unit 41. 1524] 3.d〇c • 18 - 201130572 During the processing, the coating operation of the other substrate is performed. Further, the substrate 90 is transferred from the drying single core to the standby unit 借 by the transport sheet W, and the transport unit 2 carries the other substrate into the drying unit 41, whereby the number of processed substrates of the substrate processing apparatus 100 can be increased. Further, in the above-described embodiment, the drying unit 4 includes the drying unit 41 and the drying unit 42, but may be any of them, and may be in a case where the vacuum drying step is not required depending on the composition of the coating liquid. In order to produce a unit in which only a substrate is placed as a standby unit, the drying unit 41 and the drying unit are dried, and the heat treatment unit 5 and the heat treatment unit 6 include a plurality of twisting units η, a cooling unit (3), and a buffer 53. The arrangement and number of these are appropriately determined as design items. Further, the substrate processing apparatus has been described as being configured to include the enthalpy processing unit 5 and the heat treatment unit 6. However, the heat treatment unit may be appropriately selected as a design matter. Further, when the composition of the coating liquid is not required to be heat-treated or cooled, the heating unit 51, the cooling unit 52, and the buffer core may be omitted. In addition, the conveying unit 2 and the conveying unit are placed in the opposite direction (180 direction) with respect to the drying unit 4, but this is not limited thereto. For example, as in the substrate processing apparatus shown in FIG. W, the transport unit and the transport unit 3 may be disposed at an accessible position (for example, a direction) with respect to the drying unit 4. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a substrate processing system; Fig. 2 is a perspective view showing a coating device 1; Fig. 3 is a side view showing a conveying unit 2, I52413.doc - J9-201130572 Fig. 4 FIG. 5 is a side view showing the drying unit 4, and FIG. 6 is a side view showing the relationship between the drying unit 4, the conveying unit 2, the conveying unit 3, and the heat treatment unit 5. FIG. 7 is a view showing the substrate processing. FIG. 8 is a view showing a layer a and a layer B formed on the upper surface of the substrate 90. FIG. 9 is a view showing the substrate processing apparatus 1 and the substrate processing of the second embodiment. FIG. 1 is a schematic view showing a substrate processing apparatus 丨00 of another embodiment; and FIG. 11 is a schematic view showing a conventional substrate processing system. [Main component symbol description] 1 2 4 11, 12 13a, 13b 14 15 16, 17 21 22 Coating device transport unit Drying section Heat treatment section Bridging structure Moving rail holding surface platform Discharge mechanism Base arm section 1524\3. Doc •20.201130572 23 , 112 , 113 , 122 , 123 Lifting mechanism 29 Rotating mechanism 41 , 42 Drying unit 43 Standby unit 51 , HP heating unit 52 ' CP cooling unit 53 , BF buffer 1 81 Loading unit 82 Cleaning unit 83 Temperature adjustment unit 84 Transfer unit 85 Exposure unit 86 Development unit 87 Inspection unit 88 Carry-out unit 90 Substrate 100 '100' Substrate processing apparatus 110, 120 Nozzle support parts 111, 121 Slit nozzle 161, 171 Pump 162, 172 Storage mechanism 163 173 Supply piping 221 Robot 222 chuck 152413.doc 21 201130572 223 1st arm 224 2nd arm 231 Support member 232 Strut member 411, 421 Cover portion 412 '422 Chamber 413, 423 Suction mechanism 414 ' 424 Space 431 Lower Frame 432 Pin LP Top Pin 152413.doc -22-