TW201126678A - Panel based lead frame packaging method and device - Google Patents

Panel based lead frame packaging method and device Download PDF

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Publication number
TW201126678A
TW201126678A TW099140762A TW99140762A TW201126678A TW 201126678 A TW201126678 A TW 201126678A TW 099140762 A TW099140762 A TW 099140762A TW 99140762 A TW99140762 A TW 99140762A TW 201126678 A TW201126678 A TW 201126678A
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Taiwan
Prior art keywords
wafer
leads
lead
conductive
wafers
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TW099140762A
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English (en)
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TWI435428B (zh
Inventor
Chen Lung Tsai
Long-Ching Wang
Tze-Pin Lin
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Silicon Storage Tech Inc
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Publication of TW201126678A publication Critical patent/TW201126678A/zh
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Publication of TWI435428B publication Critical patent/TWI435428B/zh

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    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
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    • H01L23/495—Lead-frames or other flat leads
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Description

201126678 - 六、發明說明： I：發明戶斤屬之技術臂威 技術領域 本發明有關於一種用以使用一引線框將半導體晶片封 裝在一平板上之方法。本發明亦有關於一種藉由這種方法 製成之裝置且特別地其中該裝置可以疊合式封裝 (package-on-package)堆疊 ° 【4标 3 發明背景 使用一引線框封裝半導體晶片在此項技術中是眾所周 知的。請參閱第1圖，其中顯示使用一引線框之一經封裝半 導體晶片的一橫截面圖。在第20圖中顯示先前技術之一引 線框20的一平面圖’該經封裝晶片1〇包含具有中央凹部14 ' 及多數分開引線12之一引線框20。一積體電路晶片22具有 一頂表面24及一底表面26，且該頂表面24具有與在該積體 電路晶片24中之各種電路元件電氣連接的多數接合墊。該 晶片22被定位在該凹部14中，使得該晶片22之底表面26透 過一導電糊放置在該凹部14上且與該凹部14電氣連接。該 凹部14係由一導電材料形成。多數接合線30連接在該晶片 22之頂表面上之某些接合墊與某些引線12之頂側，各引線 12具有與該頂側相對之一底側3 2，底側3 2將與在一印刷電 路板（PCB)上之各種電氣墊連接以供系統應用。該凹部14亦 連接在與該等引線12之底側32相同側上之印刷電路板上的 一電氣接頭，通常是接地。 201126678 在先刚技術之方法中，該晶片22先被放置在一預成形 引線框2G之凹部14上。該晶片22可被黏著_接於該凹部 14以便在賴的步驟巾防止gw㈣，―線接合機接 合該晶片22之某純合㈣某些引線12之頂側。—旦所有 線已被如此接σ，樹脂被注人—模箱中以便封閉且絕緣該 晶片22、該料30及該等5丨線12之·。該結構接著被單 粒化或切割且各Μ封裝晶片可接著藉眾所周知之技術，例 如藉將。亥㈣裝晶片1〇焊接在一印刷電路板pcB上被用來 連接另-經封裝半導體|置。在這情況中，該等引線12之 底側32及該凹部14之底表面可以焊接至該pcB上。如此該 先前技術之經封裝半導體晶片，如第腺㈣，具有僅通至 經封裝晶片之-侧用以連接—印刷電路板之多數電氣連 接。 請參閱第2a圖，其中顯示在形成另一先前技術之一經 封裝半導體晶片4〇之另-方法中的第-步驟，該另-方法 非常類似於第1圖所料所述之方法。在這方法中，該方法 由具有頂側及底側之一片銅合金42開始。光阻劑Μ被 施加至該糊及該底_者上，且在㈣上形成—掩蔽步 驟在D亥光阻劑44之未掩蔽部份被移除後，滅鍵如錫之一 可焊接材料伽便填·等被歸之部份，麟到之結構 顯示於第2b圖中。 接著移除該光阻劑44，將該可焊接材料46留在該銅合 金42上所付到之結構顯不在第&圖中。利用該可焊接材 料46作為-遮罩’在該銅合金42之頂側上進行該銅之一濕 201126678 、· 式触刻。該蝕刻形成一凹中央部50，所得到之結構顯示在 第2d圖中。 將一晶片22放在該凹孔5〇中，且該晶片22之接合墊面 向外。接著將多數線與該晶片22之接合墊接合且與在該頂 側上之可焊接柱46接合，然後將一絕緣體封閉材料施加至 該晶片22之頂側及在該底側之經蚀刻銅合金。所得到之結 構接著被單粒化或切割且結果顯示於第2f圖中。 在第1圖所示之方法與在第2 (a - f)圖所示之方法之間 的其中一差異是在第1圖之方法中，使用一預成形之引線框 20。相反地，在第2(a-f)圖所示之方法中，一片銅合金被 蝕刻以便形成一引線框。但是，在兩種方法中，線接合電 . 氣連接該晶片22之接合墊與該引線框之柱之頂側。因此， . 所得到之經封裝結構不能以一 P 0 P (疊合式封裝）構形電氣 連接在一起，或其中在經封裝晶片上與另一經封裝晶片以 —堆疊方式電氣連接。 最後，平板式封裝具有藉由濺鍍或電鍍圖案化之導體 作為通至半導體晶片之接合墊之多數電氣連接的晶片亦在 此項技術中是眾所周知的。請參見例如USp 7,224,〇61 ; 7,514,767;及7,557,437。 t發明内容3 發明概要 因此，在本發明中，一種封裝一積體電路晶片之方法 包含將多數積體電路晶片放在具有一平坦表面之一第一基 體上，且該等多數晶片之各晶片具有一頂表面及一底表 201126678 面該頂表面具有用以與該晶片電氣連接之多數接合塾， 該等多數晶片被定位成使該頂表面與該第一基體之平坦表 面接觸。將-導電點著劑施加至各晶片之底表面，將多數 預成形引線框放在該等多數晶片上且各引線框具有一中央 凹部，及多數導電引線。各引線具有一頂側及一底側，且 該中央凹部藉由-連接構件與該等多數引線連接以便進行 電傳導。該中央凹部具有一頂部及一底部，且該底部與該 等多數引線之底側實質共平面。該引線框之中央凹部被放 在該等多數晶片之導電黏著劑背側上且該凹部之頂部與該 導電黏著劑接觸’直到各引線之頂側與該第—基體之平坦 表面接觸為止°該第—基體接著被移除，具有該等多數晶 片之該等多數引線框被放在具有—平坦表面之—第二基體 上’且各引線之底側及該凹部之底部在該第二基體之平坦 表面上導電層被沈積在該晶片之頂表面及該等引線之 頂側上且被圖案化以便在該等多數晶片之其中一晶片之某 些接合墊及與該其中一晶片相關之某些導電引線之間電氣 連接。各引線框與其相鄰引線框之連接被切斷且該等引線 與該凹部之連接被切斷。該等引線之底側及中央凹部被暴 露出來以便形成多數封裝端子。 在此亦揭露藉由前述方法製造之一經封裝晶片。 圖式簡單說明 ~ΒΒ 第1圖是具有以先前技術之方法封裝之-引線框之一 經封裝晶片的橫截面圖。 第2(a-f)圖是先前技術之另一方法之橫截面圖。 201126678 第3圖疋在本發明之 θ ^ <万去中之第一步驟的橫截面圖。 第4圖是在本發明 ^ a ^ 〈万法中之下一步驟的橫截面圖。 面疋在本發明之方 妨m 左甲之下一步驟的被截面圖。 第6圖是在本發明 ^ <万法中之下一步驟的橫截面圖。 第7圖是在本發明之^^ 咕 <方法中之下一步驟的橫截面圖。 苐8圖是在本發明 吐 η又方法中之下—步驟的橫截面圖。 第9圖是在本發明 Κ方法中之下一步驟的橫截面圖。 第10圖是在本發明 <方法中之下一步驟的橫截面圖。 第11圖是在本發明之古 (方法中之下一步驟的橫截面圖。 第12圖是在本發明 β气方法中之下一步驟的橫截面圖。 第13圖是在本發明之 疋万法中之下一步驟的橫截面圖。 W圖Μ本發明之方法中之下—步驟的橫截面圖。 第15圖疋在本發明之方法中之下—步驟的橫截面圖。 第16圖疋在本發明之方法中之下—步驟的橫截面圖。 第17圖是在本發明之方法中之下-步驟的橫截面圖。 圖 第18圖是堆疊本發明之經封敦晶片之一方法之橫截面 面圖 第19圖是堆疊本發明之經封裝晶片之另一方法之橫截 第20圖是先前技術之_預成利線框之俯視圖。 第21圖疋用以使用在本發明之方法中之本發明之一預 成形引線框之俯視圖。 第22圖疋使用本發明之方法與本發明之一預成形引線 框封裝在一起之一晶片的俯視圖，其中一電感器加入該封 201126678 裝體中。 C 方包】 發明之詳細說日月 w參閱第3圖’其中顯示在本發明之方法中之一第一步 驟的橫截面圖 該方法由—第一基體60開始，該第一基體 60可以疋玻璃或具有魏特性之任何材料。該第—基體⑽ 具有一頂表面62及與其㈣之—絲面64，制表面62標 η己有夕數心編，該等記號66對應於_積體電路晶片7〇之 接口塾72將被放置之多數位置。所得到之結構顯示在第3圖 一PET層68被施加至該第一基體6〇之頂表面62，該材料 PET68可以是一雙面黏著膜。因此，該pET層68附接於該第 一基體60。例如來自Dow Corning公司之Q2-7406的一印刷 黏膠層69接著被施加至該？以層68，該黏膠層69黏著於該 PET層68。此外，它將容許該晶片70(在下一步驟中說明）黏 著於該PET層68。使用該PET層68及該黏膠層69是欲確使一 強黏著層附接於該晶片70以附接於該pet層68,以便防止在 該晶片70之表面與該PET層68之間的任何空啤。同時，利用 該PET層6 8之低黏著性質使得該PET層6 8可以在隨後的步驟 中輕易地由該第一基體60移除。所得到之結構顯示在第4圖 中。 多數積體電路晶片70接著被放在該層69上。各積體電 路晶片70具有多數接合墊72 ’且各晶片70被放置成使其接 合墊72與該等記號66對齊，這是藉由習知之眾所周知晶片 201126678 - 放置工具達成。各晶片70具有一前面74及一背面76，該等 接合墊72位在該前面74上。在該等晶片70被放在位於在該 第一基體60上之該層68的該層69上後，一導電銀糊78被施 加至各晶片70之背面76。所得到之結構顯示在第6圖中。 一預成形引線框80接著被施加至第6圖所示之結構，將 更詳細說明之該預成形引線框80具有一中央凹部14及多數 分開引線12。各分開引線12具有一頂部及一底部，且該凹 部14之底部與該等引線12之底側82實質共平面。該引線框 別被施加成使得各具有其導電銀糊78之晶片70被放在該引 線框80之凹部14中，接觸該凹部14之頂部。該引線框80接 著被向下“壓”’即，該引線框80被壓抵於該導電銀糊78 直到该專引線12之頂側84壓抵該層69為止。所得到之結構 顯示在第7圖中。 一絕緣體90被施加在第7圖所示之結構上。可以被使用 之絕緣體90之例子包括χ-35，TC-27或EF-342X或其他環氧 樹脂或化合物。所有這些材料具有它們通常具有一高導熱 性性質之性質且相當容易流動，使得它們可以一液體或糊 形式被施加。該絕緣體9 〇可以藉由包括印刷或塗布在第7圖 後形成之結構上的任何襞置施加，該絕緣體9〇到處被施加 使得它均勻地進入該凹部14，在該晶片7〇與相鄰引線12之 間。所得到之結構顯示在第8圖中。 該第一基體60接著被移除。由於該PET層68僅稍微黏著 於a亥第一玻璃基體6〇，所以該第一玻璃基體6〇可簡單地被 剝離。所得到之結構顯示在第9圖中。 201126678 β亥等層68與69接著被習知裝置被移除。最後，包含該 等引線12之底側82之該引線框8〇的表面被平面化以便移除 多餘絕緣體90。該多餘絕緣體90係藉由一平面化程序，例 如藉由包括使用砂紙（或任何其他研磨材料）抵靠該引線框 80之表面直到該等引線丨2之底側82暴露為止的任何研磨程 序，被移除。所得到之結構顯示在第1〇圖中。 該結構接著被安裝或放置在如玻璃之一第二基體92 上，且包含該等引線12之底側82之該引線框80的表面在該 基體92上。a亥結構可利用如來自d〇w Corning公司之 Q2-7406的一黏著劑層被放置在該第二基體92上，該第二基 體92僅為隨後之加工提供剛性機械支持。所得到之結構顯 示在第11圖中。 施加一SINR，如SINR、PI、ΡΒ0等光敏介電材料層94。 該層94類似於一光阻劑，且被施加在包含該等弓丨線12之底 側82的表面，及該等接合墊72上。該層94被圖案化以便暴 露在某些接合墊72與某些引線12之頂側84之間的所需連 接。所得到之結構顯示在第12圖中。 一導電層96接著被沈積在該光阻劑層94上。在該光阻 劑圖案暴露處，該導電層94在某些接合墊72與某些引線12 之頂側84之間形成一電氣連接。在某些接合墊72與某些引 線12之頂側84之間形成一電氣連接之程序中，該導電層94 可以被圖案化以便形成一電感器200，這顯示在第22圖中。 因此，本發明之方法及封裝體之其中一明顯好處是作為該 積體電路晶片70之封裝之一部份，如一電感器200(或電阻 10 201126678 -- 器）之一被動電路元件可形成且與該晶片70—起被封裝在 其中可整合多數電容器之相同封裝體中。所得到之結構顯 示在第13圖中。 一第二絕緣體98接著被施加於形成在第13圖中之結 構，且特別地覆蓋該導電層96，所得到之結構顯示在第14 圖中。該第二絕緣體98可以是為一光敏介電材料之SiNR之 另一層，在該層98被沈積後，多數開口可形成在該第二絕 緣體98中以便暴露該導電層94之多數部份。 在該第二絕緣體98之這些開口中，接著沈積UBM(凸塊 底層金屬）100。該UBM100形成用於在隨後步驟中形成以便 與該導電層94之暴露部份電氣連接之焊料球102的一反應 障壁層，焊料球102接著被放置在位於該UBM100之層上之第 二絕緣體98的相同開口中，該等球102可藉由一習知放置工 ' 具或印刷方法被定位。所得到之結構顯示在第15圖中。 然後，該第二玻璃基體92被移除。此外，該PE：T黏著劑 層亦被移除，該底側82接著被清潔。所得到之結構顯示在 第16圖中。 第16圖之結構接著被浸在一鍍錫溶液中。該錫將僅黏 著於該暴露引線框且將不會黏著於該絕緣體90，詳而言 之，錫將黏著於各引線12之底側82，且黏著於該凹部14之 底部。所得到之結構顯示在第17圖中。 本發明之經封裝積體電路晶片之方法及結構有許多優 點。首先，利用本發明之方法及裝置，具有如電阻器及電 感器及電容器之整合被動元件的一經封裝積體電路晶片可 11 201126678 以與該晶片直接封裝在-起。此外，利用本發明之方法及 裝置，可實現-P-G-P(疊合式封裝）裝置。請參閱第18圖， 其中顯不使用本發明之裝置之_p_〇_p實施例之一第一實 施例。-第-經封裝積體電路晶片咖具有一第一表面 152a，該第-表面152a具有多數可焊接球恤，且該等可 焊接球154a與該等接合塾72a電氣連i與該第—表面此 相對之第二表面160a具有通至該等引線i&之底側似之多 數導電接頭…第二經封裝積體電路晶片腿具有一第一 表面152b，該第一表面152b具有多數可焊接球㈣，且該 等可焊接球腿與料接合㈣b錢連接。與該第一表面 職相對之第二表面⑽b具有通至該等引線版之底側剛 之多數導電接頭。該等第__與第二封裝體伽與驗被定 位成使得該絲面152am52b絲面對，且料可焊接球 154a與歸互相接觸。依這方式，兩封裝體驗與·可 以被互相焊接在i且仍透過該^丨線之底側仏與哪提 供電氣接觸。 請參閱第19圖，其中顯示使用本發明之裝置之一H P 實施例之-第二實施例。—第—經封裝積體電路晶片⑽ 具有-第-表面咖’該第一表面咖具有多數可焊接球 154a’且料可焊接球154a與該等接合塾％電氣連接。與 該第-表面152a相對之第二表面⑽叫有通至該等引線 似之底側82a之多數導電接頭。一第二經封裝積體電路晶 片議具有-第―表面抓，該第—表面咖具有多數可 焊接球馳，且料可焊接球⑽與料接合㈣匕電氣連 12 201126678 •m - 接。與該第一表面15沈相對之第二表面160b具有通至該等 引線12b之底側82b之多數導電接頭。該等第一與第二封裝 體150a與150b被定位成使得該等表面152&與16〇b互相面 對，且該等可焊接球154a與該封裝體150b之底側82b接觸。 依這方式，兩封裝體15〇a與i5〇b可以被互相焊接在一起且 仍透過該等引線之底側82a及該等可焊接球丨5牝提供電氣 接觸。
.....^ rq it xpw ^ /t： /5L 裝置中之本發明之-引線峨的俯視圖。該引線框80在使 用於本&月之方法中時包含—凹部14，該凹部14藉一連接 構件職刻線細之其餘部份連接。該引線测亦包含 多數引線12(a~f)及與該凹部線12ω。雖 然僅顯示_丨線12，但是可了解的是本發明可以使用具有 ^何數目之引線12的—引線_。該引線框謎單粒化， 著該線122切糾，所有mf)互相電絕緣， 部14之電氣連接可以藉盘接。依这方式，與該凹 側電氣連接來達成。蚁方\或與該弓丨線12(g)之頂 一 成依之底部連接可 以由該_裝晶片之任-側達成。 由前述可看出本發明 片之一緊緻裝置，且—用以封裝積體電路晶 r , 體電路晶片因此製成。 【圖式簡單說明】 取 =圖是具有以先前技術之方法封裝之— 經封裝晶片的橫截面圖。 13 201126678 第2(a-f)圖是先前技術之另一方法之橫截面圖。 第3圖是在本發明之方法中之第一步驟的橫截面圖。 第4圖是在本發明之方法中之下一步驟的橫截面圖。 第5圖是在本發明之方法中之下一步驟的橫截面圖。 第6圖是在本發明之方法中之下一步驟的橫截面圖。 第7圖是在本發明之方法中之下一步驟的橫截面圖。 第8圖是在本發明之方法中之下一步驟的橫截面圖。 第9圖是在本發明之方法中之下一步驟的橫截面圖。 第10圖是在本發明之方法中之下一步驟的橫截面圖。 第11圖是在本發明之方法中之下一步驟的橫截面圖。 第12圖是在本發明之方法中之下一步驟的橫截面圖。 第13圖是在本發明之方法中之下一步驟的橫截面圖。 第14圖是在本發明之方法中之下一步驟的橫截面圖。 第15圖是在本發明之方法中之下一步驟的橫截面圖。 第16圖是在本發明之方法中之下一步驟的橫截面圖。 第17圖是在本發明之方法中之下一步驟的橫截面圖。 第18圖是堆疊本發明之經封裝晶片之一方法之橫截面 圖。 第19圖是堆疊本發明之經封裝晶片之另一方法之橫截 面圖。 第20圖是先前技術之一預成形引線框之俯視圖。 第21圖是用以使用在本發明之方法中之本發明之一預 成形引線框之俯視圖。 第2 2圖是使用本發明之方法與本發明之一預成形引線 14 201126678 框封裝在一起之一晶片的俯視圖，其中一電感器加入該封 裝體中。 【主要元件符號說明】 ίο...經封裝晶片 12,12a-g...引線 14.. .凹部 20.. .引線框 22· ·晶片 24.. .頂表面 26.. .底表面 30.. .接合線 32.. .底側 40.. .經封裝半導體晶片 42.. .銅合金 44.. .光阻劑 46.. .可焊接材料；可焊接柱 50.. .凹中央部；凹孔 60.. .第一基體 62.. .頂表面 64.. .底表面 66.. .記號 68.. . PET層 69.. .黏膠層 70.. .晶片 15 201126678 72,72a，72b...接合墊 74.. .前面 76.. .背面 78.. .導電銀糊 80.. .引線框 82, 82a, 82b...底側 84.. .頂側 90.. .絕緣體 92.. .第二基體 94…層 96.. .導電層 98.. .第二絕緣體 100.. . UBM(凸塊底層金屬） 102.. .焊料球 120.. .連接構件 122.. .線 150a...第一經封裝積體電路晶片 150b...第二經封裝積體電路晶片 152a,152b...第一表面 154a，154b...可焊接球 160a, 160b...第二表面 200.. .電感器 16

Claims (1)

  1. 201126678 七、申請專利範圍： 1. 一種經封裝半導體晶片，包含·· -預成形引線框，其具有—中央凹部，及各具有— 頂部及-底部之多數導電引線，而該等多數引線與該中 央凹部分開且絕緣，該中央凹部具有—頂側及—底側， 且該底側與該等多數引線之底部實質共平面； -積體電路晶片，其具有_頂表面及與其相對之一 底表面，而該頂表面具有用以與該晶片電氣連接之多數 接合塾’該晶片被定位在該中央凹部中而該晶片之底表 面與該凹部之頂側電氣接觸； 導電層’其被沈積在該晶片之頂表面及該等引線 之頂部上且被圖案化以將該等晶片之 連接至某些導電引線；以及 電' 一絕緣體，其覆蓋該導電層。 2.如申請專利範圍第旧之經封裝半導體晶片，其中該預 成形引線框更包含： 一接地引線’其具有-頂部及-底部，且該頂部與 該等多數引線之頂部實質共平面，並且該接地引線之底 部與該等多數引線之底部且與該凹部之底側實質共平 面；其中該接地引線與該凹部電氣連接。 3.如申請專利範圍第】項之經封裝半導體晶片，其中該晶 片之頂表面與該等多數引線之頂部實質共平面。 4·如申請專利範圍第3項之經封裝半導體晶片，更包含與 各弓丨線之底部附接的—焊接材料之一導電凸塊。 17 201126678 •如申請專利範圍第4項之經封裝半導體晶片，更包含與 各引線之頂部附接的一焊接材料之一導電凸塊。 6.如申請專利範圍第丨項之經封裝半導體日日日片更包含形 成在該導電層中將該晶片之某些接合墊連接至某些導 電引線的被動電氣電路元件。 種封裝一積體電路晶片之方法，包含： a) 將多數積體電路晶片放在具有一平坦表面之一 第-基體上，該等多數晶片之各晶片具有—頂表面及一 底表面，而該頂表面具有用以與該晶片電氣連接之多數 接合墊，該等多數晶片被定位成使該頂表面與該第一基 體之平坦表面接觸； b) 將一導電黏著劑施用至各晶片之底表面； c) 將多數經連接之引線框放在該等多數晶片上，各 引線框具有一中央凹部，及多數導電引線，而各引線具 有一頂側及一底側，該中央凹部藉由一連接構件與該等 多數引線連接，而該中央凹部具有一頂部及一底部而該 底部與該等多數引線之底㈣f共平面，該引線框之中 央凹部被放在該等多數晶片之導電黏著劑上而該凹部 之頂部與§亥導電黏著劑接觸，直到各引線之頂側與該第 一基體之平坦表面接觸為止。 d) 移除該第一基體； e) 將具有該等多數晶片之該等多數引線框放在具 考一平坦表面之一第二基體上，而各引線之底側及該凹 部之底部在該第二基體之平坦表面上； 201126678 f) 將-導電層沈積在該晶片之頂表面及該等引線 之頂側上； g) 將該導電層圖案化以將該等多數晶片之其中一 晶片之某些接合塾電氣連接至與該其中一晶片相關之 某些導電引線；以及 h) 切斷各引線框與相鄰引線框及該等引線與該凹 部之連接。 8·如申請專利範圍第7項之方法，更包含以一絕緣體填充 在步驟c)後形成之結構以填充在各晶片與相關引線框 之其相鄰引線之間之空間的步驟。 9_如申晴專利範圍第8項之方法，更包含將在步驟(句後形 成之結構加以平面化以移除在各引線之底側及該凹部 之底部上之任何絕緣體的步驟。 10. 如申凊專利範圍第8項之方法，其中該沈積步驟係在該 晶片之頂表面及該等引線之頂側上且在各晶片與該相 關引線框之相鄰引線之間之該絕緣體上方沈積一導電 層。 11. 如申請專利範圍第10項之方法，其中該導電層被圖案化 以形成將該等多數晶片之其中一晶片之某些接合墊連 接至與該其中一晶片相關之某些導電引線的多數被動 電路元件。 12·如申請專利範圍第10項之方法，更包含·· 將一焊接材料之一導電凸塊與各引線之底側附接。 13.如申請專利範圍第12項之方法，更包含： 201126678 將一焊接材料之一導電凸塊與各引線之頂側附接。 20
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