TW201124555A - Film forming device, film forming method and storage medium - Google Patents

Film forming device, film forming method and storage medium Download PDF

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Publication number
TW201124555A
TW201124555A TW099131354A TW99131354A TW201124555A TW 201124555 A TW201124555 A TW 201124555A TW 099131354 A TW099131354 A TW 099131354A TW 99131354 A TW99131354 A TW 99131354A TW 201124555 A TW201124555 A TW 201124555A
Authority
TW
Taiwan
Prior art keywords
film forming
film
container
gas
temperature
Prior art date
Application number
TW099131354A
Other languages
English (en)
Chinese (zh)
Inventor
Shuji Azumo
Yasuhiko Kojima
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201124555A publication Critical patent/TW201124555A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW099131354A 2009-09-17 2010-09-16 Film forming device, film forming method and storage medium TW201124555A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009215416A JP2011063850A (ja) 2009-09-17 2009-09-17 成膜装置、成膜方法および記憶媒体

Publications (1)

Publication Number Publication Date
TW201124555A true TW201124555A (en) 2011-07-16

Family

ID=43758527

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099131354A TW201124555A (en) 2009-09-17 2010-09-16 Film forming device, film forming method and storage medium

Country Status (5)

Country Link
US (1) US20120171365A1 (https=)
JP (1) JP2011063850A (https=)
KR (1) KR20120053032A (https=)
TW (1) TW201124555A (https=)
WO (1) WO2011033918A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106783589A (zh) * 2015-11-24 2017-05-31 泰拉半导体株式会社 供气及排气装置
TWI668316B (zh) * 2014-10-24 2019-08-11 德商愛思強歐洲公司 在數個位置上被饋送稀釋用氣流的經調溫之進氣管

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5659041B2 (ja) * 2011-02-24 2015-01-28 東京エレクトロン株式会社 成膜方法および記憶媒体
JP5656683B2 (ja) * 2011-02-24 2015-01-21 東京エレクトロン株式会社 成膜方法および記憶媒体
JP2012198449A (ja) 2011-03-23 2012-10-18 Nitto Denko Corp 偏光膜および偏光フィルム
MY189436A (en) * 2016-04-12 2022-02-11 Picosun Oy Coating by ald for suppressing metallic whiskers
US20180134738A1 (en) * 2016-11-01 2018-05-17 Versum Materials Us, Llc Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof
US12315466B2 (en) 2023-04-26 2025-05-27 JoysonQuin Automotive Systems North America, LLC Front-lit user interface

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7270848B2 (en) * 2004-11-23 2007-09-18 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US7279421B2 (en) * 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
US20070218200A1 (en) * 2006-03-16 2007-09-20 Kenji Suzuki Method and apparatus for reducing particle formation in a vapor distribution system
US20070234955A1 (en) * 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
US20070237895A1 (en) * 2006-03-30 2007-10-11 Tokyo Electron Limited Method and system for initiating a deposition process utilizing a metal carbonyl precursor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI668316B (zh) * 2014-10-24 2019-08-11 德商愛思強歐洲公司 在數個位置上被饋送稀釋用氣流的經調溫之進氣管
CN106783589A (zh) * 2015-11-24 2017-05-31 泰拉半导体株式会社 供气及排气装置
CN106783589B (zh) * 2015-11-24 2021-11-23 圆益Ips股份有限公司 供气及排气装置

Also Published As

Publication number Publication date
WO2011033918A1 (ja) 2011-03-24
KR20120053032A (ko) 2012-05-24
JP2011063850A (ja) 2011-03-31
US20120171365A1 (en) 2012-07-05

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