KR20120053032A - 성막 장치, 성막 방법 및 기억 매체 - Google Patents

성막 장치, 성막 방법 및 기억 매체 Download PDF

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Publication number
KR20120053032A
KR20120053032A KR1020127006193A KR20127006193A KR20120053032A KR 20120053032 A KR20120053032 A KR 20120053032A KR 1020127006193 A KR1020127006193 A KR 1020127006193A KR 20127006193 A KR20127006193 A KR 20127006193A KR 20120053032 A KR20120053032 A KR 20120053032A
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KR
South Korea
Prior art keywords
film forming
raw material
film
cobalt carbonyl
forming raw
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020127006193A
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English (en)
Korean (ko)
Inventor
슈지 아즈모
야스히코 고지마
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20120053032A publication Critical patent/KR20120053032A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020127006193A 2009-09-17 2010-08-27 성막 장치, 성막 방법 및 기억 매체 Ceased KR20120053032A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009215416A JP2011063850A (ja) 2009-09-17 2009-09-17 成膜装置、成膜方法および記憶媒体
JPJP-P-2009-215416 2009-09-17

Publications (1)

Publication Number Publication Date
KR20120053032A true KR20120053032A (ko) 2012-05-24

Family

ID=43758527

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127006193A Ceased KR20120053032A (ko) 2009-09-17 2010-08-27 성막 장치, 성막 방법 및 기억 매체

Country Status (5)

Country Link
US (1) US20120171365A1 (https=)
JP (1) JP2011063850A (https=)
KR (1) KR20120053032A (https=)
TW (1) TW201124555A (https=)
WO (1) WO2011033918A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170060352A (ko) * 2015-11-24 2017-06-01 주식회사 테라세미콘 가스 공급 및 배기 장치

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5659041B2 (ja) * 2011-02-24 2015-01-28 東京エレクトロン株式会社 成膜方法および記憶媒体
JP5656683B2 (ja) * 2011-02-24 2015-01-21 東京エレクトロン株式会社 成膜方法および記憶媒体
JP2012198449A (ja) 2011-03-23 2012-10-18 Nitto Denko Corp 偏光膜および偏光フィルム
DE102014115497A1 (de) * 2014-10-24 2016-05-12 Aixtron Se Temperierte Gaszuleitung mit an mehreren Stellen eingespeisten Verdünnungsgasströmen
MY189436A (en) * 2016-04-12 2022-02-11 Picosun Oy Coating by ald for suppressing metallic whiskers
US20180134738A1 (en) * 2016-11-01 2018-05-17 Versum Materials Us, Llc Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof
US12315466B2 (en) 2023-04-26 2025-05-27 JoysonQuin Automotive Systems North America, LLC Front-lit user interface

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7270848B2 (en) * 2004-11-23 2007-09-18 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US7279421B2 (en) * 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
US20070218200A1 (en) * 2006-03-16 2007-09-20 Kenji Suzuki Method and apparatus for reducing particle formation in a vapor distribution system
US20070234955A1 (en) * 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
US20070237895A1 (en) * 2006-03-30 2007-10-11 Tokyo Electron Limited Method and system for initiating a deposition process utilizing a metal carbonyl precursor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170060352A (ko) * 2015-11-24 2017-06-01 주식회사 테라세미콘 가스 공급 및 배기 장치

Also Published As

Publication number Publication date
WO2011033918A1 (ja) 2011-03-24
TW201124555A (en) 2011-07-16
JP2011063850A (ja) 2011-03-31
US20120171365A1 (en) 2012-07-05

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