201103646 六、發明說明： 【發明所屬之技術領域】 本發明係關於基板材料的表面處理裝置。亦即，關於 電子電路基板的製造製程中代表性的蝕刻製程所使用且以 處理液進行基板材料表面處理之表面處理裝置。 【先前技術】 《技術背景》 印刷配線基板、其他電子電路基板之代表性製造製程 中，在覆蓋著銅的積層板所構成的基板材料之外表面，首 先塗布或黏貼液狀或乾薄膜狀之感光性光阻。 接著，放上電路的負片（Nega film)進行曝光後，藉 由顯影，溶解除去電路形成部分以外的光阻，將藉此而露 出的電路形狀部分以外的銅箔，利用蝕刻溶解除去之後， 以剝離方式溶解除去電路形成部分的光阻。 經由這種程序，以基板材料外表面残留的銅箔形成電 子電路，製造出電子電路基板。而且，這種銅箔可使用電 解銅、電鍍銅、兩者倂用者等。 《先前技術》 如第5圖之（1)圖所示，上述顯影製程、蝕刻製程、剝 離製程等中，分別以顯影裝置、蝕刻裝置及剝離裝置等表 面處理裝置1，從噴嘴2(單液體噴嘴）對被搬送之基板材料 A噴射顯影液、蝕刻液、剝離液等的處理液B。 藉此，針對基板材料A依序實施顯影、蝕刻、剝離等 -4 - 201103646 的表面處理。第5圖之π)圖中，3爲用於搬送基板材料a 之輸送帶4的搬送輥，5爲處理液B之液槽。 [先前技術文獻] [專利文獻] 這種表面處理裝置1例如可舉出以下專利文獻1、專 利文獻2所示者》 [專利文獻1]日本特開2002-68435號公報 [專利文獻2]日本特開2006-222117號公報 【發明內容】 [發明所欲解決之課題] 然而，關於上述這種習知例的表面處理裝置1，被指 出以下課題。 《課題之問題點》 電子電路基板在形成有圖形的電路C(參照第5圖之（2) 圖）的微細化、高密度化的進展上顯著。例如，於電路寬L 或電路間空間S，係經微細化、高密度化達到1 5 μ m~40 μ m程度。 對此，關於此基板材料A之蝕刻等的表面處理，被指 出精度及穩定性的問題。例如，有報告指出如第3圖之（4) 圖所示，形成略富士山狀、急傾斜的梯形形狀之剖面形狀 的電路C，產生側面蝕刻、過度蝕刻。 第3圖之（4)圖之例中，於40μ m之電路寬L、4〇At m之 電路間空間S、20 μιη之電路高度Η等之設定下，在形成 201103646 頂面寬X爲25μ m〜35μ m程度而側面蝕刻寬γ爲左右大約 5 μ m程度的電路C部位，形成了許多蝕刻。因此，蝕刻評 價基準之蝕刻因子低至3前後程度。 然後，這種側面蝕刻、過度蝕刻之產生，對於上述電 路C之微細化、高密度化傾向而言係成爲大問題。當電路 C產生這種部位時，通電電容、電阻値等相對於設定値的 變動大，訊號傳達等亦產生障礙，且有發熱情形。 《關於其原因》 在有關電路C被如此地進行側面蝕刻、過度蝕刻而使 電路寬L變窄的原因方面，首先可舉出蝕刻液等處理液B 之衝擊不足。例如，於藉由蝕刻噴射形成電路C圖形時， 對基板材料 A之衝擊有必要大於或等於最大衝撃値 20 0Mn，但以往這種習知例中卻大爲缺乏。 因此，這種習知例中，朝基板材料A噴射的蝕刻液之 更新受到阻礙，也會產生液積存或滞留，因而產生蝕刻不 足部位，爲了能彌補而增加蝕刻量時，則如上述般產生蝕 刻過多之側面蝕刻、過度蝕刻。 再者，這種側面蝕刻、過度蝕刻之產生原因，亦可舉 出噴射在基板材料A的蝕刻液等處理液B之粒徑大，未能 確實地進入電路C經微細化、高密度化之圖形内。 《關於本發明》 本發明之基板材料的表面處理裝置係有鑒於這樣的 實際情形，爲了解決上述習知例之課題而硏發者。 .201103646 而且，本發明之目的在於提案一種基板材料的表面處 理裝置，其第1係透過對基板材料強力衝擊以實施均勻之噴 射，第2係藉此而能高精度地穩定製造電子電路基板。 [解決課題之手段] 《關於申請專利範圍》 用於解決這種課題之本發明之技術手段係如下述。首 先，關於申請專利範圍第1項，係如下述。 申請專利範圍第1項之基板材料的表面處理裝置，係從 噴嘴對使用在電子電路基板的製造製程中且被搬送之基板 材料噴射處理液以進行表面處理。 且，其特徴爲：該噴嘴係由雙流體噴嘴構成，其將處 理液和空氣混合噴射，該基板材料和該噴嘴之間形成5圓以 上~40麵以下之間隔距離。 關於申請專利範圍第2項，係如下述。申請專利範圍 第2項之基板材料的表面處理裝置，係如申請專利範圍第 1項，其特徴爲：分別於各噴射管設置複數個該噴嘴，且 各該噴射管係朝向左右方向排列，於前後之搬送方向彼此 存在有間隔，同時設有複數支，並且可在左右方向水平往 復移動。 關於申請專利範圍第3項，係如下述。申請專利範圍 第3項之基板材料的表面處理裝置，係如申請專利範圍第 2項，其特徴爲：與該空氣一起從該噴嘴被噴出的該處理 液係成爲微小粒子，朝該基板材料噴射，且該處理液係在 201103646 極接近的前述間隔距離，以強力衝擊噴射該基板材料，並 且藉由該噴射管以及該噴嘴的前述水平往復移動， 板材料廣泛均勻地噴射。 關於申請專利範圍第4項，係如下述。申請專利範圍 第4項之基板材料的表面處理裝置，係如申請專利範圍第 3項，其特徴爲：該處理液係以大於或等於最大衝胃{直 200 mN的強力衝擊力，噴射該基板材料》 關於申請專利範圍第5項係如下述。申請專利範 5項之基板材料的表面處理裝置，係如申請專利範圍第1 項，其特徴爲：在該噴嘴中，被壓送供給的該空氣係於內 部噴射路直行前進，而被壓送供給的該處理液係在該內部 噴射路的中途從橫向對直行前進之該空氣進行供給而混 合。 關於申請專利範圍第6項，係如下述。申請專利範圍 第6項之基板材料的表面處理裝置，係如申請專利範圍第 3項或第5項，其特徴爲：該空氣係從壓送源亦即鼓風機， 被壓送供給至該噴嘴。 關於申請專利範圍第7項，係如下述。申請專利範圍 第7項之基板材料的表面處理裝置，係如申請專利範圍第 6項，其特徴爲：從該鼓風機被壓送供給至該噴嘴之該空 氣、以及從該噴嘴與該空氣混合噴射之該處理液係溫度上 升狀態，藉由將該處理液噴射至該基板材料之方式’以曝 光提高該基板材料的表面處理精度之功能。 201103646 關於申請專利範圍第8項，係如下述。申請專利範圍第 8項之基板材料的表面處理裝置，係如申請專利範圍第1 項’其特徴爲：該表面處理裝置係使用於顯影製程、蝕刻 製程、剝離製程或洗淨製程，該噴嘴係將顯影液、蝕刻液、 剝離液或洗淨液作爲該處理液噴射。 《關於作用等》 本發明係藉由這種手段所得，因此如下述。 U)該表面處理裝置係使用在電子電路基板的製造製 程，例如蝕刻製程。 (2) 因此，從其噴嘴噴射處理液，對基板材料進行表面 處理。 (3) 而且，建構成將雙流體噴嘴製之噴嘴以5 nun ~40 mm 之間隔距離對基板材料配設，並且由使其水平往復移動。 (4) 因此，與空氣一起從噴嘴噴出的處理液，被粒子 化，並且以大於或等於最大衝撃値200mN之強力衝擊，朝 基板材料噴射。 (5) 又，由於噴嘴係朝左右往復移動，因此處理液能以 廣闊的噴射範圍遍及基板材料均句地噴射》 (6) 根據以上，經微細化、高密度化之電路圖形形成 時，基板材料的表面處理亦高精度地穩定實施。 (7) 亦即，處理液可確實地進入電路圖形内，並且進行 更新而避免產生液積存或滯留，因此不會產生蝕刻不足以 及過度蝕刻等。 201103646 (8) 如此一來，可獲得接近理想的剖面形狀之電路。 (9) 然而，使用鼓風機作爲空氣壓送源時，噴嘴所壓送 供給且噴射的空氣以及處理液之温度上升。因此，由此層 面來看，基板材料的表面處理能更加順暢且迅速地高精度 實施，獲得接近理想的剖面形狀之電路。 (10) 因此，本發明發揮以下效果。 [發明之功效] 《第1效果》 第1，以強力衝擊對基板材料實施均勻之噴射。本發 明的表面處理裝置係以組合採用雙流體噴嘴、5 mm ~40 mm之 間隔距離、水平往復移動等爲特徴。 因此，例如於蝕刻時，成爲微\小粒子狀之蝕刻液係以 大於或等於最大衝撃値200mN的強力衝擊，朝基板材料噴 射，並且藉往復移動而廣泛均勻地噴射。 因此，能迴避如利用單流體噴射的前述這種習知例之 側面蝕刻、過度蝕刻，防止產生電路寬度變窄變細的部位， 因此形成接近理想的剖面形狀之電路。藉由本發明之表面 處理裝置，能如此地以高精度地穩定實施蝕刻及其他表面 處理。 又，基於上述理由，亦有例如蝕刻速度較快等全體裝 置的處理速度提高之優點》 特別是使用鼓風機作爲空氣壓送源時，能更加高精度 穩定地，而且處理速度優異地，實施基板材料的表面處理。 -10- 201103646 亦即，由於將温度上升後的處理液朝基板材料噴射， 因此能更加順暢、高精度地穩定實施基板材料的蝕刻等表 面處理，並且亦提髙蝕刻速度等處理速度。 《第2效果》 第2，因此即使是電路經微細化、髙密度化的電子電 路基板，亦能高精度地穩定製造》 亦即，本發明之表面處理裝置係如上述，能以高精度 地穩定實施蝕刻及其他表面處理。因此，將在電路寬或電 路間空間被微細化達到1 5 μ m〜40 μ m程度的電路形成圖形 時，亦依照所期望的方式實施表面處理，因此能穩定地製 造高精度的電子電路基板。 不會如同利用單流體噴嘴之前述這種習知例在所製 造出的電子電路基板的電路，通電容量、電阻値等對設定 値發生變動的情形，也能防止訊號傳達產生障礙、或發熱 的情形》 如此，存在於這種習知例中之全部應被解決的課題等 方面，本發明發揮的效果有極爲顯著之處。 【實施方式】 以下，詳細地説明關於用於實施本發明之形態。 《關於表面處理裝置6》 如第1圖、第2圖所示，本發明之基板材料A的表面 處理裝置6，係從噴嘴7噴射處理液B，對使用在電子電 路基板的製造製程中且被搬送之基板材料A，進行表面處 -11- 201103646 理（關於製造製程等，亦參照前述先前技術欄）。 亦即’該表面處理裝置6係在以蝕刻製程爲 製程或剝離製程，以及附隨該等製程而設的洗 中’被用作爲蝕刻裝置、顯影裝置、剝離裝置、 裝置等。又，代表性爲適用減去（Subtractive)法， 電子電路基板的各種製造方法，例如亦可適 (Semiadditive)法 ° 然後，該表面處理裝置6中，於處理室8内 送帶4的搬送輥3等（第1圖等中省略圖示，參目 圖之（1)圖）’對被水平搬送的基板材料A，噴射會 影液、剝離液或者洗淨液等處理液B。因此，祝 液B的基板材料A，係進行預定的藥液處理或沒 表面處理。 而且，表面處理後的處理液B係流下到液本 收、儲存後，經由泵9、過濾器10、配管11等， 12*到噴嘴7，循環供給而再使用。 表面處理裝置6的槪要是如此。 《本發明之槪要》 以下，參照第1圖~第4圖説明關於本發明之 裝置6。首先，就其槪要作敘述。 該表面處理裝置6的噴嘴7係由雙流體噴嘆 處理液B和氣體D混合噴射。基板材料a和噴權 形成5國以上〜40咖以下的間隔距離e。 首的顯影 淨製程等 或者洗淨 其以外之 用半加成 ，藉由輸 i前述第5 !刻液、顯 噴射處理 淨處理等 I 5，被回 從噴射管 表面處理 構成，將 7之間係 -12- 201103646 然後，分別於各噴射管12設有複數個噴嘴7,各噴射 管12係朝向左右方向F排列，在前後之搬送方向G彼此 存在有間隔，同時設有複數支，並且形成可在左右方向F 水平往復移動。 然後，與氣體D —起從噴嘴7噴出的處理液B，係成 爲微小粒子朝基板材料A噴射。 且，處理液B係在極接近的前述間隔距離E，以強力 衝擊對基板材料A噴射，並且藉由噴射管12以及噴嘴7 的前述水平往復移動來覆蓋按其程度對基板材料A形成較 窄的的噴射範圍，因此對基板材料A廣泛均句地噴射》 處理液B對基板材料A，例如以大於或等於最大衝撃 値200mN的強力衝擊，廣泛均句地噴射。 本發明之槪要是如此。 《本發明之詳細》 茲進一步詳述關於這種表面處理裝置6。首先，如第1 圖或第3圖之（1)圖中所示，其噴嘴7係由雙流體噴嘴構成。 然後，該雙流體噴嘴製之噴嘴7所壓送供給的氣體D， 係於内部噴射路13直行前進，而被壓送供給的處理液B 係在内部噴射路13的中途從正交之横向對直行前進的氣 體D進行供給、而混合。 氣體D係藉由如此地直行前進之方式，而有内部阻力 較少之優點。相對於此，處理液B係藉由從橫向對直行前 進的氣體D供給的方式，而有順暢地被吸入氣體〇而混合 -13- 201103646 之優點。且藉此，亦有能使其壓送供給壓較低之優點》 然後，在被導入之外氣從風扇、壓縮機或鼓風機等壓 送源14被壓送，因此，經由過濾器15、流量計16、配管 17等之後，氣體D係從噴射管122供給到噴嘴7。圖中1 8 爲壓力計。 該氣體D係被以O.OIMPa以上~0.6MPa以下程度之供 給壓力作供給。在使用壓縮機作爲壓送源14的情形，代表 性的是0.3MPa以上〜0.6MPa以下程度的高壓空氣，而在使 用鼓風機的情形，代表性的是O.OIMPa以上~〇.〇8MPa以下 程度之低壓空氣。 在使用鼓風機例如魯氏鼓風機（Roots blower)作爲壓 送源1 4的情形，温度比被導入之外氣的雰圍温度還高的氣 體D係由鼓風機所生成。例如温度上升至40 °C〜90 °C程度 的氣體D係由鼓風機所生成，藉以被適當供給·» 另一方面，處理液B係如前述，從噴射管12ι被供給 到噴嘴7。 與氣體D —起從噴嘴7的噴射孔19噴出之處理液B， 係成爲平均粒徑爲20// m~3〇At m程度之微小粒子，並且以 較氣體D的前述供給壓低若干之噴射壓，朝基板材料a噴 射。 然後，從噴嘴7的噴射孔19到基板材料A之間隔距 離E，係設定成上下5 mm ~40隨程度。在藉由餓刻等之表面 處理形成電路C圖形時，噴射的處理液B對基板材料a必 -14- 201103646 須有最大衝撃値穩定地大於或等於20〇mN的打壓力，亦即 賦予強力衝擊，而藉由如此之間隔距離E可獲得必要之衝 擊。 例如’如第4圖所示，對基板材料a以半徑40 mm程 度所形成的整體外觀上之噴射範圍中，以半徑20 mm程度所 成的中心上、實質上的噴射範圍中，最大衝撃値確實爲大 於或等於200mN » 而且，間隔距離E爲超過40mm時，最大衝撃値爲低 於20〇1111^，相對地，間隔距離£未達5 111111時，噴嘴7和基 板材料A過於接近，由於處理液B的反射等，而在光滑的 表面處理產生障礙。 作爲噴嘴7’係使用代表性的平錐形噴嘴（Fiat cone nozzle)(噴射圖形爲橢圓形）或實心.圓錐形噴嘴（Full cone nozzle)(噴射圖形爲圓形），但當然也可以使用除了該等以 外之各種噴嘴。 又’作爲基板材料A，代表性的是在表背兩面形成有 電路C之兩面基板型，但僅於單面形成電路c之單面基板 型當然亦可考慮，再者，該表面處理裝置6亦可廣泛適用 於多層基板及其他各種形態的基板。 圖示例中，於各噴射管12各設置5個噴嘴7。然後， 各噴射管12係朝向與前後方向之搬送方向g正交的左右 方向F ’平行地排列著。亦即，前後之搬送方向g彼此存 在有前後間隔’同時處理室8内例如上下各設置4支。 -15- 201103646 然後，各噴射管12以及噴嘴7係朝向左右方向F同步 連動，在預定距離間水平滑動，同時可往復移動。 而且，氣體D係從噴射管122、處理液B係從噴射管 1 21，分別被供給到噴嘴7 »然後，第1圖例中，噴射管1 22 和噴射管1 2 ^係個別地配設，並且同步連動地水平往復移 動。 相對於此，如第2圖所示之例，若將相對於共通的噴 嘴7成一對的噴射管122和噴射管12i，作爲噴射管12並 存，且一體連接設置，（例如將噴射管12内部區劃成雙流 體用之構成）則往復移動動作較爲容易。 本發明係形成如此狀態。 《作用等》 本發明之基板材料A的表面處理裝置6係如以上説明 方式構成。因此，成爲如下述那樣。 (1) 該表面處理裝置6係使用於電子電路基板的製造製 程。亦即，係在以構成製造製程的核心之蝕刻製程爲首的 顯影製程、剝離製程及洗淨製程等中被用作爲蝕刻裝置、 進而顯影裝置、剝離裝置、洗淨裝置等。 (2) 然後，表面處理裝置6係以處理液B’將基板材料 A進行表面處理成電路C形成用。 亦即，經由噴射管12(12ι、122)從噴嘴7，對被搬送之 基板材料A噴射蝕刻液、顯影液、剝離液、洗淨液等處理 液B，因此將基板材料A進行蝕刻 '顯影、剝離、洗淨等（參 -16 - 201103646 照第1圖、第2圖）。作爲蝕刻液係例如使用氯化銅或氯化 鐵。 (3) 然後，本發明之表面處理裝置6係由採用雙流體噴 嘴作爲噴嘴7，並且將該噴嘴7對基板材料A配設成5 mm ~40 mm之間隔距離E，進一步使其與噴射管12(12丨、122)— 起在左右方向F水平往復移動之構造所構成。 本發明係以組合採用這種構成爲特徴（參照第1圖、第 2圖、第3圖之（1)圖等）》 (4) 因此’與氣體D —起從噴嘴7噴出的處理液B，首 先以20μ πι~40μ m程度微小粒子化，朝基板材料a噴射。 然後，處理液B係以5 mm ~ 4 0 mm之極接近的間隔距離 E，朝向基板材料A噴射，因此以強力衝擊朝基板材料a 噴射。於蝕刻等表面處理，必須有大於或等於最大衝撃値 200mN左右的衝擊，而確實能獲得這種強力衝擊（參照後 述之表1和第4圖）。 (5) 然而，由於以如此地接近之間隔距離E噴射處理液 B，因此維持在此情況下，對基板材料A的噴射範圍變窄（參 照第4圖）。 因此，爲了覆蓋狹窄的噴射範圍，採用使噴射管 12(12>、122)以及噴嘴7朝左右方向F水平往復移動的系 統》因此，處理液B對基板材料A賦予強力衝擊，並且藉 由水平往復移動，能於廣泛的噴射範圍對基板材料A完全 均勻地噴射。 -17- .201103646 (6) 在本發明之表面處理裝置6，處理液B係如此地微 小粒子化，且以強力衝擊均勻地朝基板材料A噴射。 因此，在電路寬L或電路間空間S，形成電路C經微 細化、高密度化之15以m〜40 /zm程度的圖形時，也以高精 度穩定地實施表面處理。 (7) 亦即，由於處理液B已微粒子化，因此能確實地進 入基板材料A之電路C經微細化、高密度化的圖形内》而 且處理液B係依強力衝擊而進行在基板材料A外表面的更 新，迴避產生液積存或滯留，也不會產生蝕刻不足或過度 蝕刻。 (8) 如此地，進行基板材料A的表面處理，且可獲得接 近於理想的剖面形狀之電路C »能迴避這種習知例之側面 蝕刻，防止產生電路寬L狹細化的部位。 因此，接近於剖面形狀爲正方形或長方形之理想例（參 照第3圖之（2)圖），獲得電路C(參照第3圖之（3)圖）。迴避 如這種習知例之略富士山狀、急傾斜梯形狀之電路C (參照 第3圖之（4)圖）。 例如，蝕刻時’於40/xm之電路寬L、40/im之電路 間空間S、20 μ m之電路高度Η等的設定下，形成如以下（參 照第3圖之（3)圖）。 亦即，至少形成頂面寬X爲36Mm程度、側面蝕刻寬 Y爲左右2/zm程度之電路C (與第3圖之（4)圖比較對照）。 蝕刻評價基準之蝕刻因子提高至5〜1 0前後程度。 -18- 201103646 (9) 然而’作爲氣體d之壓送源14，鼓風機例如使用 魯氏鼓風機時’更進一步對該等作用更優異。 亦即’從鼓風機構成的壓送源14所壓送供給之氣體 D’由於温度比外部空氣之雰圍温度更爲上升，因此從噴 嘴7與氣體D混合噴射之處理液B，亦伴隨其而温度上升^ 因此’温度上升後的處理液B係噴射到基板材料A » 因此’使得基板材料A的蝕刻、顯影、剝離等表面處理更 爲順暢且迅速地以高精度實施，故由此層面來看，能獲得 接近於理想之電路C。 (10) 例如’於蝕刻製程中，對基板材料A進行蝕刻處 理時，代表性爲45°C ~50°C程度之温度較適宜。視情況有 時亦適用6 0 °C前後程虔，軟式蝕刻的情形下，例如適用3 0 t ~ 3 5 °C 程度。 又，於剝離製程中，對基板材料A進行剝離處理時， 代表性爲45°C〜50°C程度較適宜，於顯影製程中，對基板 材料A進行顯影處理時，例如30°C~35°C程度爲適宜。 相對於此，利用壓送源14之鼓風機產生的温度上升之 氣體D，係於40°C〜90°C程度間的預定温度區域。 因此，若於壓送源14之鼓風機產生適於表面處理之温 度的氣體D之情形下，則從鼓風機對噴嘴7，直接壓送供 給温度上升至上述温度區域的氣體D。 相對於此，適於表面處理之温度，若低於鼓風機產生 之上述温度區域的情形下，則在鼓風機附設冷卻裝置。因 -19- 201103646 此，温度調節至適於表面處理之温度，將温度被降低之氣 體D壓送供給至噴嘴7。 [實施例1] 在此，就本發明實施例1的數據作説明。下表1及附 加的第4圖，係顯示關於實施例1的表面處理裝置6所獲 得之數據。 [表1] 性能測試 數 據 空氣量(L/min) 200 噴霧水量(L/min) 0.8 空氣壓(MPa) 0.038 水壓(MPa) 0.026 測量距離㈣ 45 40 30 20 10 5 最大衝擊値(mN) 212 224 244 298 385 477 首先，關於測試條件亦如表1中所示，如同下述。 •使用之噴嘴7 :雙流體噴嘴 •氣體D之供給量（空氣量） ：200L/min •處理液B之供給量（噴霧水量）：〇.8L/min •氣體D之供給壓（空氣壓） ：0.03 8MPa •噴射壓（水壓） ：0.026MPa 於這種測試條件之下，依序變更噴嘴7對基板材料A 的間隔距離E，並且依照各間隔距離E，計測處理液B對 -20- 201103646 基板材料A的最大衝撃値。（此外，經計測B 子徑爲30/xm程度。） 於是，獲得表1和第4圖中所示之計測 本發明將間隔距離E設定爲5 mm ~40 mm時， t於或等於200mN之屬必要衝擊的最大衝撃 亦即，分別計測出在間隔距離E爲5 nun 是 477111]^、爲1〇111111時是 3851111^、爲2〇111111時 30 mm時是244mN、以及爲40 mm時是224mN 各間隔距離E皆在對基板材料A的半徑20 實質的噴射範圍中，穩定地獲得大於或等於 衝撃値。 而且，第1，在間隔距離E爲45刪時雖 的最大衝撃値，但該最大衝撃値是局部性的 並非針對噴射範圍穩定地獲得者。又，間隔 mm時，降低到1 60mN程度之最大衝撃値。 如此，當間隔距離E超過40 mm時，最 未達200mN，未能獲得必要的衝擊。 再者，第2，間隔距離E愈小則最大衝 噴射範圍變窄。因此，水平往復移動的移動 較大。 有關實施例1係如上所述。 [實施例2] 接著，就本發明之實施例2的數據作説 魯理液B之粒 結果。當如同 能穩定地獲得 値。 時最大衝撃値 是298mN、爲 。與此同時， 圆1之中心的、 200mN的最大 計測到212mN ，瞬間性的， 距離E爲50 大衝撃値成爲 撃値愈大，但 距離被設定成 明。 -21 - 201103646 下表2係顯示關於實施例2的表面處理裝置6所獲得 之數據，表3係顯示關於這種習知例的表面處理裝置1所 獲得之數據。但是，數據中可能包含若干測定誤差。 -22- 201103646 [表2] 本發明之實施例 線&空間 (_ 空氣壓 (Mpa) 液壓 (Mpa) 圖型 頂部寬 (//m) 圖型 底部寬 (αχώ 圖型 間隔 (βτώ 圖型 高度 (wra) E/F 酬 時間 (sec) 30/30 0.06 0.04 23 30 30 23 6.6 40 25/25 0. 06 0.04 18 26 24 20 5.0 40 20/20 0. 06 0.04 17 21 19 18 9,0 40 [表3] 習知技術 線&空間 (Mm) 空氣壓 (Mpa) 液壓 (Mpa) 圖型 頂部寬 i //m) 圖型 底部寬 (a m'i 圖型 間隔 (am) 圖型 高度 (βία) E/F 蝕刻 時間 〇p+r·、 30/30 — 0· 1 19 31 29 23 3.8 120 25/25 一 0· 1 13 27 23 19 2.7 130 20/20 * — 0.1 5 20 20 19 2.5 130 然後，依照各線&空間（亦即電路寬L/電路間空間S) 之各個目標値、理想値（參照前述第3圖之（2)圖），於共同 的氣壓（氣體D的供給壓、空氣壓）、液壓（噴射壓，水壓）、 蝕刻時間等條件下，進行了測試。此外，噴嘴高度（間隔距 離E)亦共同地設爲30瞧。 其結果爲於本發明之實施例2中，如上述表2所示， 從圖形頂部寬（頂面寬X)、圖形底部寬（電路寬L)、圖形間 -23- 201103646 隔（電路間空間S)、圖形高度（電路高度Η)等各要點之測定 値來看，獲得接近於理想之良好形狀的電路C(參照前述第 3圖之（3)圖），因此蝕刻因子（E/F)高。 相對於此，於這種習知例中，如上述表3所示，從各 要點之測定値來看，形成略富士山狀、急傾斜梯形狀之不 佳形狀的電路C(參照前述第3圖之（4)圖），蝕刻因子（e/F) 亦低。 如此地，數據層面亦支持本發明優異的作用效果。有 關實施例2係如上所述。 [實施例3] 接著，就本發明之實施例3的數據作説明。 下表4係顯示關於將噴嘴高度（間隔距離E)設定爲30 麵的實施例之表面處理裝置6所獲得之數據，表5係顯示 關於將噴嘴高度（間隔距離E)設定爲40 mm的實施例之表 面處理裝置6所獲得之數據。但是，數據中可能包含若干 測定誤差。 [表4] 本發明之實施例（噴嘴高度30 mm ) 線&空間 (βτα) 空氣壓 (Mpa) 液壓 (Mpa) 圖型 頂部寬 i jf/m) •圖型 底部寬 (a 圖型 .間隔 i wm) 圖型 高度 (//. χχί\ E/F 麵 時間 (sec) 0. 04 0. 03 11 21 19 18 3.6 40 20/20 0.05 0.03 13 21 19 19 4.8 40 0.06 0. 04 17 20 20 17 11.3 40 -24- 201103646 [表5] 本發明之實施例（噴嘴高度40 mm ) 線&空間 (Aim) 空氣壓 (Mpa) 液壓 (Mpa) 圖型 頂部寬 (a τη) 圖型 底部寬 ium) 圖型 間隔 (u. τηΐ) 圖型 高度 (tiwi) E/F 蝕刻 時間 (sec、 0.04 0. 03 14 24 16 19 3.8 40 20/20 0. 05 0. 03 13 21 19 20 5.0 40 0.06 0.04 15 22 18 19 5.4 40 然後，一起將線&空間（亦即電路寬L/電路間空間S) 的目標値、理想値（參照前述第3圖之（2)圖）設定爲共同的 20/20，並且基於共同的蝕刻時間，依序改變氣壓（氣體d 的供給壓、空氣壓）及液壓（噴射壓、水壓）的條件以進行測 試。其結果爲獲得皆爲良好的數據。 亦即，從圖形頂部寬（頂面寬X)、圖形底部寬（電路寬 L)、圖形間隔（電路間空間S)、圖形高度（電路高度H)等各 點之測定値來看，獲得接近於理想形狀的電路C(亦參照前 述第3圖之（3)圖），形成良好的蝕刻因子（E/F)。 根據這種數據層面，亦支持本發明優異的作用效果。 有關實施例3係如上所述。 【圖式簡單說明】 第1圖係針對關於本發明之基板材料的表面處理裝 置’供説明用於實施發明之形態的正剖面説明圖。 第2圖係供説明用於實施該發明之形態的平面説明 -25- 201103646 圖。 第3圖係供説明用於實施該發明之形態，（1)圖爲噴嘴 等之正面説明圖，（2)圖、（3)圖、（4)圖爲電路之剖面説明 圖，（2)圖表示理想例，（3)圖表示良好例（本發明），（4)圖表 示不佳例（習知例）。 第4圖係供説明用於實施該發明之形態的噴射衝擊 (最大衝撃値）之圖表。 第5圖中的（1)圖係表面處理裝置的側面之剖面説明 圖，（2)圖係放大電子電路基板的測試圖形之主要部分的俯 視圖。 【主要元件符號說明】 1 表 面 處理裝置（習知例） 2 噴 嘴 (習知例） 3 搬 送 輥 4 輸 送 帶 5 液 槽 6 理 裝 置（本發明） 7 噴 嘴 (本發明） 8 處 理 室 9 泵 10、 15 過 濾 器 11' 17 配 管 12、 12. • 122 噴 射 管 -26- 201103646 13 内部噴射路 14 壓送源 16 流量計 18 壓力計 19 噴射孔 A 基板材料 B 處理液 C 電路 D 氣體 E 間隔距離 F 左右方向 G 搬送方向 H 電路高度 L 電路寬 S 電路間空間 X 頂面寬 Y 側面蝕刻寬 -27-201103646 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a surface treatment apparatus for a substrate material. That is, a surface treatment apparatus which is used in a typical etching process in the manufacturing process of an electronic circuit board and which performs surface treatment of the substrate material with a treatment liquid. [Prior Art] "Technical Background" In a typical manufacturing process of a printed wiring board and another electronic circuit board, a liquid or dry film is first applied or adhered to the surface of the substrate material which is formed of a laminated board covered with copper. Photosensitive photoresist. Next, after the negative film (Nega film) of the circuit is placed and exposed, the photoresist other than the circuit formation portion is dissolved and removed by development, and the copper foil other than the circuit shape portion exposed thereby is removed by etching and removed. The peeling method dissolves and removes the photoresist of the circuit forming portion. Through such a procedure, an electronic circuit is formed by forming an electronic circuit with a copper foil remaining on the outer surface of the substrate material. Further, as the copper foil, electrolytic copper, copper plating, or both can be used. <<Prior Art>> As shown in Fig. 5 (1), in the above-described developing process, etching process, peeling process, and the like, a surface treating device 1 such as a developing device, an etching device, and a peeling device is used, respectively, from the nozzle 2 (single liquid) The nozzle) sprays the processing liquid B such as a developing solution, an etching solution, and a peeling liquid onto the substrate material A to be conveyed. Thereby, surface treatment of development, etching, peeling, and the like -4 - 201103646 is sequentially performed on the substrate material A. In the π) diagram of Fig. 5, 3 is a conveying roller for conveying the conveying material 4 of the substrate material a, and 5 is a liquid tank for the processing liquid B. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Laid-Open Publication No. JP-A-2002-68435 (Patent Document 2) [Problem to be Solved by the Invention] However, the surface treatment apparatus 1 of the above-described conventional example is pointed out as follows. "Problem of the problem" The electronic circuit board is remarkable in the progress of miniaturization and high density of the circuit C (see Fig. 5 (2)) in which the pattern is formed. For example, the circuit width L or the inter-circuit space S is fined and densified to a level of about 15 μm to 40 μm. On the other hand, the surface treatment such as etching of the substrate material A indicates a problem of accuracy and stability. For example, it has been reported that, as shown in Fig. 3(4), a circuit C having a cross-sectional shape of a trapezoidal shape which is slightly Fuji-like and steeply inclined is formed, and side etching and over etching are generated. In the example of Fig. 3 (4), in the case of a circuit width L of 40 μm, an inter-circuit space S of 4 〇 At m, a circuit height Η of 20 μm, etc., the top surface width X is formed at 201103646. The degree of m to 35 μm and the side etching width γ are about 5 μm to the left and right of the circuit C portion, and many etchings are formed. Therefore, the etch factor of the etch evaluation benchmark is as low as three degrees. Then, the occurrence of such side etching and over-etching is a big problem in terms of the miniaturization and high density of the above-described circuit C. When the circuit C generates such a portion, the fluctuations of the energization capacitance, the resistance 値, and the like with respect to the setting 大 are large, and the signal transmission and the like are also hindered, and there is a fever. In the case where the circuit C is subjected to side etching and over-etching to narrow the circuit width L, first, the impact of the processing liquid B such as an etching liquid is insufficient. For example, when the circuit C pattern is formed by etching, it is necessary that the impact on the substrate material A is greater than or equal to the maximum punch 20 Mn, but this conventional example is largely lacking. Therefore, in such a conventional example, the renewal of the etching liquid sprayed toward the substrate material A is hindered, and liquid is accumulated or accumulated, so that an insufficient etching portion is generated, and when the etching amount is increased to compensate, the above-described generation is generated as described above. Excessive etching of side etching, over etching. In addition, the cause of the side etching and the over-etching may be that the particle size of the processing liquid B such as the etching liquid sprayed on the substrate material A is large, and the circuit C is not surely entered into the circuit C to be miniaturized and densified. Inside the graphic. <<Regarding the Invention>> The surface treatment apparatus for a substrate material of the present invention has been developed in order to solve the problems of the above-described conventional examples in view of such actual circumstances. Further, an object of the present invention is to provide a surface treatment apparatus for a substrate material, in which the first system transmits a uniform impact to the substrate material to perform uniform ejection, and the second system can stably manufacture the electronic circuit board with high precision. [Means for Solving the Problem] "About Patent Application Scope" The technical means of the present invention for solving such a problem is as follows. First, regarding the first item of the patent application scope, it is as follows. The surface treatment apparatus for a substrate material according to the first aspect of the invention is a surface treatment by spraying a processing liquid from a nozzle pair on a substrate material used in a manufacturing process of an electronic circuit board. Further, the nozzle is characterized in that the nozzle is composed of a two-fluid nozzle which mixes the treatment liquid and the air, and the substrate material and the nozzle form a separation distance of 5 circles or less and ～40 or less. The second item of the patent application scope is as follows. The surface treatment device for the substrate material of the second aspect of the patent application is the first item of the patent application scope, characterized in that a plurality of the nozzles are respectively disposed in each of the injection pipes, and each of the injection pipes is arranged in the left-right direction. The transport directions before and after are spaced apart from each other, and a plurality of branches are provided, and can be horizontally reciprocated in the left and right directions. Regarding the third item of the patent application scope, it is as follows. A surface treatment apparatus for a substrate material according to the third aspect of the patent application is the second aspect of the patent application, characterized in that the treatment liquid sprayed from the nozzle together with the air becomes fine particles, and is sprayed toward the substrate material. And the treatment liquid is sprayed with the substrate material with a strong impact at the aforementioned separation distance which is extremely close to 201103646, and the plate material is sprayed widely and uniformly by the ejection tube and the aforementioned horizontal reciprocating movement of the nozzle. Regarding item 4 of the scope of patent application, it is as follows. The surface treatment device for the substrate material of claim 4 is as claimed in claim 3, wherein the treatment liquid is sprayed with the substrate having a strong impact force greater than or equal to the maximum osmosis {strath 200 mN. Material The fifth item of the scope of patent application is as follows. The surface treatment device for applying the substrate material of Patent No. 5 is the first item of the patent application scope, and the special feature is that, in the nozzle, the air supplied by the pressure is fed straight on the internal injection path, and is pushed forward. The supplied processing liquid is supplied and mixed from the horizontally advancing air in the middle of the internal injection path. Regarding item 6 of the scope of patent application, it is as follows. Patent Document No. 6 is a surface treatment apparatus for a substrate material according to claim 3 or 5, which is characterized in that the air is supplied to the nozzle from a pressure feed source, that is, a blower. Regarding item 7 of the scope of patent application, it is as follows. A surface treatment apparatus for a substrate material according to claim 7 is the sixth aspect of the patent application, characterized in that: the air supplied to the nozzle from the blower is blown, and the air is mixed and sprayed from the nozzle. The process liquid temperature rise state is a function of improving the surface treatment accuracy of the substrate material by exposure to eject the treatment liquid onto the substrate material. 201103646 The eighth item of patent application scope is as follows. The surface treatment device for the substrate material of claim 8 is as claimed in the first item of the patent application. The feature is that the surface treatment device is used in a development process, an etching process, a stripping process or a cleaning process. A developing solution, an etching solution, a peeling liquid or a washing liquid is sprayed as the treatment liquid. <<About Effect, etc.>> The present invention is obtained by such a means, and thus is as follows. U) The surface treatment apparatus is used in a manufacturing process of an electronic circuit substrate, such as an etching process. (2) Therefore, the substrate material is subjected to surface treatment by ejecting the treatment liquid from its nozzle. (3) Further, the nozzle made of the two-fluid nozzle is disposed to the substrate material at a distance of 5 nun to 40 mm, and is horizontally reciprocated. (4) Therefore, the treatment liquid sprayed from the nozzle together with the air is granulated, and is sprayed toward the substrate material with a strong impact of 200 mN or more. (5) Since the nozzle reciprocates in the right and left direction, the processing liquid can be ejected uniformly over the substrate material in a wide ejection range. (6) When the circuit pattern is formed by miniaturization and high density, the substrate is formed. The surface treatment of the material is also stably carried out with high precision. (7) That is, the treatment liquid can surely enter the circuit pattern and be updated to avoid liquid accumulation or retention, so that insufficient etching and excessive etching are not caused. 201103646 (8) In this way, a circuit close to the ideal cross-sectional shape can be obtained. (9) However, when a blower is used as the air pressure source, the nozzle is fed and supplied, and the temperature of the injected air and the treatment liquid rises. Therefore, from this viewpoint, the surface treatment of the substrate material can be performed more smoothly and quickly with high precision, and a circuit close to an ideal sectional shape can be obtained. (10) Therefore, the present invention exerts the following effects. [Effects of the Invention] "First Effect" First, uniform spraying is performed on the substrate material with a strong impact. The surface treatment apparatus of the present invention is characterized by a combination of a two-fluid nozzle, a separation distance of 5 mm to 40 mm, horizontal reciprocation, and the like. Therefore, for example, at the time of etching, the etching liquid which becomes a micro/small particle is sprayed toward the substrate material with a strong impact of 200 mN or more, and is sprayed widely and uniformly by reciprocating movement. Therefore, it is possible to avoid the side etching and the over-etching of the above-described conventional example using the single-fluid ejection, and to prevent the portion where the circuit width is narrowed and narrowed, thereby forming a circuit close to the ideal cross-sectional shape. According to the surface treatment apparatus of the present invention, etching and other surface treatment can be stably performed with high precision. In addition, for the above-mentioned reasons, there is an advantage that the processing speed of all the devices such as the etching speed is improved. In particular, when the air blower is used as the air pressure source, the substrate material can be more stably and accurately processed. Surface treatment. -10-201103646 In other words, since the processing liquid after the temperature rise is ejected toward the substrate material, the surface treatment such as etching of the substrate material can be stably performed more smoothly and accurately, and the processing speed such as the etching rate can be improved. In the second aspect, the electronic circuit board having a finer circuit and a higher density can be stably manufactured with high precision. That is, the surface treatment apparatus of the present invention can be accurately performed as described above. Stable etching and other surface treatments are performed. Therefore, when a circuit is formed in a circuit having a circuit width or an inter-circuit space of about 15 μm to 40 μm, the surface treatment is performed in a desired manner, so that a highly accurate electronic circuit substrate can be stably manufactured. . In the circuit of the electronic circuit board to be manufactured, such as the above-described conventional example using the single-fluid nozzle, it is possible to prevent the signal from being transmitted or the heat is generated when the setting capacitance is changed. In this case, the effects exerted by the present invention are extremely remarkable in terms of all the problems to be solved in such conventional examples. [Embodiment] Hereinafter, embodiments for carrying out the invention will be described in detail. <<Surface Treatment Apparatus 6>> As shown in Fig. 1 and Fig. 2, the surface treatment apparatus 6 of the substrate material A of the present invention ejects the treatment liquid B from the nozzle 7, and is used in the manufacturing process of the electronic circuit board. The substrate material A to be transferred is subjected to surface treatment -11-201103646 (see also the aforementioned prior art column regarding the manufacturing process and the like). That is, the surface treatment apparatus 6 is used as an etching apparatus, a developing apparatus, a peeling apparatus, a device, and the like in a process in which an etching process is used as a process or a stripping process, and a cleaning process is performed in conjunction with the processes. Further, the subtractive method is representatively applicable to various manufacturing methods of the electronic circuit board, and for example, a suitable method can be applied. Then, in the surface treating apparatus 6, the conveying roller for feeding the belt 4 in the processing chamber 8 is used. 3, etc. (not shown in Fig. 1 and the like, and (1) in the reference figure) 'The processing liquid B such as a shadow liquid, a peeling liquid, or a washing liquid is sprayed on the substrate material A that is horizontally conveyed. Therefore, the substrate material A of the liquid B is subjected to a predetermined chemical treatment or no surface treatment. Further, the surface treatment liquid B is discharged to the liquid and stored, and then recirculated and supplied through the pump 9, the filter 10, the piping 11, and the like, 12* to the nozzle 7. This is the case with the surface treatment device 6. <<Summary of the Invention>> Hereinafter, the device 6 of the present invention will be described with reference to Figs. 1 to 4 . First of all, let's make a narrative. The nozzle 7 of the surface treatment device 6 is mixed and sprayed by the two-fluid squirting treatment liquid B and the gas D. The substrate material a and the ejection weight form a separation distance e of 5 or more and 40 or less coffee. The first development process or the like, or the half-addition other than the cleaning, is carried out by the surface of the injection tube by I5, the fifth etch, the blast treatment, and the like. -12-201103646 Then, a plurality of nozzles 7 are provided in each of the injection tubes 12, and each of the injection tubes 12 is arranged in the left-right direction F, and there are spaces between the front and rear conveyance directions G, and a plurality of branches are formed and formed. It can reciprocate horizontally in the left and right direction F. Then, the treatment liquid B discharged from the nozzle 7 together with the gas D is sprayed as fine particles toward the substrate material A. Further, the treatment liquid B is sprayed toward the substrate material A with a strong impact at the aforementioned separation distance E, and is covered by the above-described horizontal reciprocating movement of the injection tube 12 and the nozzle 7 to cover the substrate material A to a narrower extent. The range of the spray is therefore widely sprayed on the substrate material A. The treatment liquid B is sprayed on the substrate material A, for example, with a strong impact greater than or equal to the maximum punching force of 200 mN. This is the case with the present invention. DETAILED DESCRIPTION OF THE INVENTION This surface treatment apparatus 6 is further described in detail. First, as shown in Fig. 1 or Fig. 3 (1), the nozzle 7 is constituted by a two-fluid nozzle. Then, the gas D fed by the nozzles 7 made of the two-fluid nozzle is directly advanced in the internal injection path 13, and the liquid to be supplied B is supplied in the middle of the internal injection path 13 from the orthogonal direction. The gas D that goes straight ahead is supplied and mixed. The gas D has the advantage of having less internal resistance by moving so straight ahead. On the other hand, the processing liquid B has an advantage of being smoothly supplied to the gas D by mixing the gas D which is advancing straight ahead in the lateral direction, and mixing -13-201103646. In addition, there is an advantage that the pressure supply pressure can be made low. Then, the air is pumped from the pressure source 14 such as a fan, a compressor, or a blower, and the flow rate is passed through the filter 15 and the flow rate. After the meter 16, the piping 17, and the like, the gas D is supplied from the injection pipe 122 to the nozzle 7. In the figure, 1 8 is a pressure gauge. This gas D is supplied at a supply pressure of about 0.1 MPa to 0.6 MPa. In the case where a compressor is used as the pressure feed source 14, high-pressure air of about 0.3 MPa or more to 0.6 MPa or less is representative, and in the case of using a blower, it is representatively O.OIMPa or more to 〇.〇8 MPa or less. Low pressure air. In the case where a blower such as a Roots blower is used as the pressure source 14 , the gas D having a temperature higher than the temperature of the atmosphere introduced into the outside air is generated by the blower. For example, the gas D whose temperature has risen to about 40 ° C to 90 ° C is generated by a blower, and is appropriately supplied.» On the other hand, the treatment liquid B is supplied from the injection pipe 12 to the nozzle 7 as described above. The treatment liquid B which is ejected from the injection hole 19 of the nozzle 7 together with the gas D is a fine particle having an average particle diameter of about 20//m to 3 〇Atm, and is sprayed at a lower pressure than the supply pressure of the gas D. Pressing, spraying toward the substrate material a. Then, the distance E from the ejection hole 19 of the nozzle 7 to the substrate material A is set to be 5 mm to 40 degrees above and below. When the circuit C pattern is formed by surface treatment such as starving, the sprayed treatment liquid B must have a maximum punching force of 20 2011 mN or more, which is a strong force for the substrate material a. Impact, and by such a separation distance E, the necessary impact can be obtained. For example, as shown in Fig. 4, in the ejection range of the overall appearance of the substrate material a having a radius of about 40 mm, the maximum spurt in the center and the substantial ejection range formed by the radius of 20 mm It is indeed greater than or equal to 200mN » Moreover, when the separation distance E is more than 40mm, the maximum impulse is less than 20〇1111^, and relatively, when the separation distance is less than 5111111, the nozzle 7 and the substrate material A are too close due to The reflection of the treatment liquid B or the like is caused by the smooth surface treatment. As the nozzle 7', a representative flat cone nozzle (the elliptical shape of the spray pattern) or a solid cone nozzle (the round shape of the spray pattern) is used, but of course, it is also possible to use Various nozzles other than these. Further, the substrate material A is typically a two-sided substrate type in which the circuit C is formed on both sides of the front and back sides. However, it is of course possible to form the single-sided substrate type of the circuit c on only one side. Further, the surface treatment apparatus 6 is also considered. It can also be widely applied to multilayer substrates and other substrates of various forms. In the illustrated example, five nozzles 7 are provided for each of the injection tubes 12. Then, each of the injection tubes 12 is arranged in parallel in the left-right direction F' orthogonal to the conveyance direction g in the front-rear direction. That is, the front and rear transport directions g have a front-rear interval therebetween, and four chambers are provided in the processing chamber 8, for example, up and down. -15-201103646 Then, each of the injection tubes 12 and the nozzles 7 are synchronously linked in the left-right direction F, horizontally slid between predetermined distances, and reciprocally movable. Further, the gas D is supplied from the injection pipe 122 and the processing liquid B from the injection pipe 121 to the nozzles 7 » respectively. Then, in the first example, the injection pipe 1 22 and the injection pipe 1 2 are individually arranged. And the horizontal reciprocating movement synchronously. On the other hand, in the example shown in FIG. 2, the injection pipe 122 and the injection pipe 12i which are paired with respect to the common nozzle 7 are coexisted as the injection pipe 12, and are integrally connected (for example, the inside of the injection pipe 12) The division into a two-fluid configuration makes it easier to reciprocate. The present invention forms such a state. <<Operation and the like>> The surface treatment apparatus 6 of the substrate material A of the present invention is configured as described above. Therefore, it becomes as follows. (1) The surface treatment apparatus 6 is used in a manufacturing process of an electronic circuit board. In other words, it is used as an etching device, a developing device, a peeling device, a cleaning device, and the like in a developing process, a peeling process, a cleaning process, and the like, which are the etching processes constituting the core of the manufacturing process. (2) Then, the surface treatment apparatus 6 performs surface treatment of the substrate material A with the treatment liquid B' to form the circuit C. In other words, the processing liquid B such as an etching liquid, a developing solution, a peeling liquid, and a cleaning liquid is ejected from the nozzle 7 through the nozzles 12 (12 to 122), so that the substrate material A is etched and developed. , peeling, washing, etc. (Ref.-16 - 201103646, see Figure 1 and Figure 2). As the etching liquid system, for example, copper chloride or iron chloride is used. (3) Then, the surface treatment apparatus 6 of the present invention employs a two-fluid nozzle as the nozzle 7, and the nozzle 7 is disposed on the substrate material A at a distance E of 5 mm to 40 mm to further make it and the injection tube. 12 (12 丨, 122) - A structure that reciprocates horizontally in the left-right direction F. In the present invention, such a configuration is adopted in combination (see Fig. 1, Fig. 2, Fig. 3, Fig. 1 and the like). (4) Therefore, the treatment liquid B ejected from the nozzle 7 together with the gas D First, it is microparticulated at a level of 20 μm to 40 μm, and is ejected toward the substrate material a. Then, the treatment liquid B is ejected toward the substrate material A at a very close separation distance E of 5 mm to 40 mm, and thus is ejected toward the substrate material a with a strong impact. For surface treatment such as etching, it is necessary to have an impact of about 200 mN or more, and it is possible to obtain such a strong impact (see Tables 1 and 4 below). (5) However, since the processing liquid B is ejected at the distance E so close thereto, the ejection range for the substrate material A is maintained in this case (see Fig. 4). Therefore, in order to cover a narrow injection range, a system in which the ejection tubes 12 (12 >, 122) and the nozzles 7 are horizontally reciprocated in the left-right direction F is employed. Therefore, the treatment liquid B imparts a strong impact to the substrate material A, and is horizontally The reciprocating movement enables complete and uniform ejection of the substrate material A over a wide range of ejection. -17-.201103646 (6) In the surface treatment apparatus 6 of the present invention, the treatment liquid B is finely particle-formed as described above, and is uniformly sprayed toward the substrate material A with a strong impact. Therefore, in the circuit width L or the inter-circuit space S, when the pattern of the circuit C is refined and densified by 15 to 40 to 40 m, the surface treatment is stably performed with high precision. (7) In other words, since the processing liquid B is micronized, it can surely enter the pattern C in which the circuit material A of the substrate material A is refined and densified, and the processing liquid B is subjected to the strong impact to the substrate material A. The renewal of the outer surface avoids the accumulation or retention of liquid, and does not cause insufficient etching or excessive etching. (8) In this manner, the surface treatment of the substrate material A is performed, and the circuit C» which is close to the ideal cross-sectional shape can be obtained. The side etching of this conventional example can be avoided, and the portion where the circuit width L is narrowed can be prevented. Therefore, an example (see Fig. 3 (2)) in which the cross-sectional shape is a square or a rectangle is obtained, and the circuit C is obtained (see Fig. 3 (3)). In the conventional example, the circuit C of the Fuji mountain shape or the steeply inclined ladder shape is referred to (refer to Fig. 3 (4)). For example, at the time of etching, the circuit width L of 40/xm, the inter-circuit space S of 40/im, and the circuit height Η of 20 μm are set as follows (refer to Fig. 3 (3)). That is, at least a circuit C having a top surface width X of about 36 Mm and a side etching width Y of about 2/zm is formed (compared with the figure (4) of Fig. 3). The etching factor of the etching evaluation standard is increased to about 5 to 10 degrees. -18- 201103646 (9) However, as the pressure feed source 14 of the gas d, the blower is more excellent in the action, for example, when using a Rouge blower. That is, the gas D' which is fed and supplied by the pressure feed source 14 composed of the air blower is higher in temperature than the ambient temperature of the outside air, so that the treatment liquid B which is mixed and injected from the nozzle 7 and the gas D is accompanied by the temperature. Therefore, the processing liquid B after the temperature rise is ejected to the substrate material A. Therefore, the surface treatment such as etching, development, and peeling of the substrate material A is performed more smoothly and quickly with high precision. , can get close to the ideal circuit C. (10) For example, in the etching process, when the substrate material A is subjected to etching treatment, a temperature of about 45 ° C to 50 ° C is preferable. It is also applicable to 60 °C before and after the case, and in the case of soft etching, for example, 30 to 3 5 °C. Further, in the peeling process, when the substrate material A is subjected to the release treatment, it is preferably about 45 ° C to 50 ° C, and in the development process, when the substrate material A is subjected to development processing, for example, 30 ° C to 35 The degree of °C is suitable. On the other hand, the gas D which rises in temperature by the blower of the pressure feed source 14 is in a predetermined temperature range of about 40 °C to 90 °C. Therefore, when the blower of the pressure feed source 14 generates the gas D suitable for the surface treatment temperature, the supply of the gas D having the temperature rise to the temperature range is directly fed from the blower to the nozzle 7. On the other hand, when the temperature suitable for the surface treatment is lower than the temperature range generated by the blower, a cooling device is attached to the blower. Since -19-201103646, the temperature is adjusted to the temperature suitable for the surface treatment, and the gas D whose temperature is lowered is supplied to the nozzle 7. [Embodiment 1] Here, the data of Embodiment 1 of the present invention will be described. Table 1 below and the attached Fig. 4 show the data obtained with respect to the surface treating apparatus 6 of the first embodiment. [Table 1] Performance test data Air volume (L/min) 200 Spray water volume (L/min) 0.8 Air pressure (MPa) 0.038 Water pressure (MPa) 0.026 Measuring distance (4) 45 40 30 20 10 5 Maximum impact 値 (mN) 212 224 244 298 385 477 First, the test conditions are as shown in Table 1, as described below. • Nozzle used 7: Two-fluid nozzle • Supply amount of gas D (air volume): 200 L/min • Supply amount of treatment liquid B (spray water amount): 〇.8 L/min • Supply pressure of gas D (air pressure) : 0.03 8MPa • Injection pressure (water pressure): 0.026MPa Under this test condition, the separation distance E of the nozzle 7 to the substrate material A is sequentially changed, and the treatment liquid B is measured according to the separation distance E. 201103646 The maximum punching of the substrate material A. (In addition, the measured B sub-path is about 30/xm.) Thus, the measurements shown in Tables 1 and 4 are obtained. When the separation distance E is set to 5 mm to 40 mm, t is equal to or equal to 200 mN. The maximum impact of the necessary impact, that is, the interval distance E is 5 nun is 477111]^, when 1〇111111 is 3851111^, when 2〇111111 is 30mm, it is 244mN, and when it is 40mm, it is Each of the separation distances E of 224 mN is stably obtained to be greater than or equal to the pulsation in the ejection range of the radius 20 of the substrate material A. Further, the first is that the maximum distance of the separation distance E is 45, but the maximum impulse is local and is not obtained stably for the ejection range. Also, at intervals of mm, the maximum impulse to the extent of 1 60 mN is reduced. Thus, when the separation distance E exceeds 40 mm, the maximum is less than 200 mN, and the necessary impact is not obtained. Further, in the second case, the smaller the separation distance E is, the smaller the maximum injection range is. Therefore, the movement of the horizontal reciprocating movement is large. The related embodiment 1 is as described above. [Example 2] Next, the results of the Example 2 of the present invention were referred to as the results of the particle of Luli Liquid B. When it is as stable as 获得. The maximum rush is 298mN, for . At the same time, the maximum measurement of 200mN at the center of the circle 1 is 212mN. In an instant, the distance E is 50, and the distance is set to be bright. -21 - 201103646 Table 2 below shows the data obtained with respect to the surface treating apparatus 6 of Embodiment 2, and Table 3 shows the data obtained by the surface treating apparatus 1 of this conventional example. However, the data may contain several measurement errors. -22- 201103646 [Table 2] Example of the present invention & space (_ air pressure (Mpa) hydraulic pressure (Mpa) pattern top width (//m) pattern bottom width (αχώ pattern interval (βτώ pattern) Height (wra) E/F Time (sec) 30/30 0.06 0.04 23 30 30 23 6.6 40 25/25 0. 06 0.04 18 26 24 20 5.0 40 20/20 0. 06 0.04 17 21 19 18 9,0 40 [Table 3] Conventional Technology Line & Space (Mm) Air Pressure (Mpa) Hydraulic (Mpa) Pattern Top Width i / m) Pattern Bottom Width (a m'i Pattern Interval (am) Pattern Height (βία) E/F Etching time 〇p+r·, 30/30 — 0· 1 19 31 29 23 3.8 120 25/25 A 0· 1 13 27 23 19 2.7 130 20/20 * — 0.1 5 20 20 19 2.5 130 Then, according to the respective targets 値 and ideal 値 of each line & space (that is, the circuit width L/inter-circuit space S) (refer to the figure (2) in the above figure 3), the common air pressure (gas D The test was carried out under the conditions of supply pressure, air pressure, hydraulic pressure (jet pressure, water pressure), etching time, etc. Further, the nozzle height (separation distance E) was also collectively set to 30 瞧. The result is that the present invention In the second embodiment, such as As shown in Table 2 above, from the top of the figure width (top width X), the bottom width of the pattern (circuit width L), between the graphics -23-201103646 (inter-circuit space S), graphics height (circuit height Η) and other points In the measurement, a circuit C which is close to an ideal good shape is obtained (see the figure (3) in the third figure), and therefore the etching factor (E/F) is high. In contrast, in this conventional example, As shown in the above-mentioned Table 3, the circuit C (see the figure (4) of the above-mentioned 3rd figure) which forms the shape of the Fuji-mountain-shaped and the steep inclined ladder is formed from the measurement point of each point, and an etching factor (e). In this way, the data layer also supports the excellent effects of the present invention. The related embodiment 2 is as described above. [Embodiment 3] Next, the data of Embodiment 3 of the present invention will be described. 4 shows data obtained by the surface treatment apparatus 6 of the embodiment in which the nozzle height (distance distance E) is set to 30, and Table 5 shows an example in which the nozzle height (distance distance E) is set to 40 mm. The data obtained by the surface treatment device 6. However, the data may include Measurement error [Table 4] Example of the present invention (nozzle height 30 mm) Line & space (βτα) Air pressure (Mpa) Hydraulic pressure (Mpa) Pattern top width i jf/m) • Pattern bottom width (a Pattern. Interval i wm) Pattern height (//. \ί\ E/F surface time (sec) 0. 04 0. 03 11 21 19 18 3.6 40 20/20 0.05 0.03 13 21 19 19 4.8 40 0.06 0. 04 17 20 20 17 11.3 40 -24- 201103646 [Table 5] Embodiment of the invention (nozzle height 40 mm) Line & space (Aim) Air pressure (Mpa) Hydraulic pressure (Mpa) Pattern top width (a τη) The bottom of the pattern is wide ium) Graphic interval (u. τηΐ) Pattern height (tiwi) E/F Etching time (sec, 0.04 0. 03 14 24 16 19 3.8 40 20/20 0. 05 0. 03 13 21 19 20 5.0 40 0.06 0.04 15 22 18 19 5.4 40 Then, set the target 値 and ideal 线 of the line & space (that is, the circuit width L/inter-circuit space S) together (refer to the figure (2) in the above figure 3) For the common 20/20, and based on the common etching time, the conditions of the air pressure (the supply pressure of the gas d, the air pressure) and the hydraulic pressure (the injection pressure, the water pressure) were sequentially changed to perform the test. The result is good data obtained. That is, from the measurement of the top width (top width X), the bottom width of the pattern (circuit width L), the pattern interval (inter-circuit space S), and the height of the pattern (circuit height H), the proximity is obtained. A good etching factor (E/F) is formed in the circuit C of an ideal shape (see also the figure (3) of FIG. 3 described above). According to this data level, the excellent effects of the present invention are also supported. The related embodiment 3 is as described above. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a front cross-sectional explanatory view for explaining a form of a surface treatment apparatus for a substrate material of the present invention. Figure 2 is a plan view for explaining the form of the invention -25-201103646. Fig. 3 is a view for explaining the form of the invention, (1) is a front explanatory view of a nozzle or the like, (2), (3), and (4) are sectional views of the circuit, (2) The figure shows a preferred example, (3) shows a good example (present invention), and (4) shows a poor example (a conventional example). Fig. 4 is a chart for explaining the jet impact (maximum punching) for carrying out the form of the invention. Fig. 5 is a cross-sectional view showing the side surface of the surface treatment apparatus, and Fig. 2 is a plan view showing the main part of the test pattern of the electronic circuit board. [Description of main components] 1 Surface treatment apparatus (conventional example) 2 Nozzle (conventional example) 3 Transfer roller 4 Conveyor belt 5 Liquid tank 6 Device (invention) 7 Nozzle (invention) 8 Processing chamber 9 Pump 10 , 15 Filter 11' 17 Piping 12, 12. • 122 Injection tube-26- 201103646 13 Internal injection path 14 Pressure feed source 16 Flow meter 18 Pressure gauge 19 Injection hole A Substrate material B Treatment liquid C Circuit D Gas E Separation distance F Left-right direction G Transport direction H Circuit height L Circuit width S Inter-circuit space X Top surface width Y Side etching width -27-