TW201103120A - Lighting device, display, and method for manufacturing the same - Google Patents

Lighting device, display, and method for manufacturing the same Download PDF

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Publication number
TW201103120A
TW201103120A TW098125833A TW98125833A TW201103120A TW 201103120 A TW201103120 A TW 201103120A TW 098125833 A TW098125833 A TW 098125833A TW 98125833 A TW98125833 A TW 98125833A TW 201103120 A TW201103120 A TW 201103120A
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TW
Taiwan
Prior art keywords
light
layer
substrate
light source
particles
Prior art date
Application number
TW098125833A
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English (en)
Other versions
TWI393241B (zh
Inventor
Wen-Chiun Ing
Wei-Hsin Hou
Original Assignee
Luxing Tek Ltd
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Publication of TW201103120A publication Critical patent/TW201103120A/zh
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Publication of TWI393241B publication Critical patent/TWI393241B/zh

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133606Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/02Diffusing elements; Afocal elements
    • G02B5/0205Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/0236Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/02Diffusing elements; Afocal elements
    • G02B5/0273Diffusing elements; Afocal elements characterized by the use
    • G02B5/0278Diffusing elements; Afocal elements characterized by the use used in transmission
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133611Direct backlight including means for improving the brightness uniformity
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B2207/00Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
    • G02B2207/113Fluorescence
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B2207/00Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
    • G02B2207/115Electrowetting
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13324Circuits comprising solar cells
    • GPHYSICS
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133342Constructional arrangements; Manufacturing methods for double-sided displays
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/13338Input devices, e.g. touch panels
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133601Illuminating devices for spatial active dimming
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
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    • G02F1/133603Direct backlight with LEDs
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
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    • G02F1/133605Direct backlight including specially adapted reflectors
    • GPHYSICS
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/13362Illuminating devices providing polarized light, e.g. by converting a polarisation component into another one
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Description

201103120 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種能夠產生一均勻之面光源之新穎超薄型發光 裝置及其製造方法。 【先前技術】 典型之發光二極體(light emitting diode ; LED )封裝包括:附 著一發光二極體晶粒至由一鑄鋁件製成之一引線框架(lead frame),打線接合(wire bonding)以電性連接發光二極體至引線 框架,並利用一成型製程(molding process)以一光學透明之環氧 樹脂囊封該發光二極體、接合線及引線框架,其中二引線自該成 型囊封引出以用於電性連接。此種類型之發光二極體封裝結構形 成一「點」光源,並廣泛適用於一般之照明、訊息板(message board ) 及燈箱。另一種發光二極體封裝則將發光二極體封裝成用於SMT 總成之一非常緊密之形式,其廣泛用於液晶顯示器(liquid crystal’ display ; LCD)背光單元應用。然而,在本領域中眾所習知,該 等典型之發光二極體封裝非常昂貴(相較於發光二極體裸晶粒而 言)並且無法用於形成一均勻之面光源,除非使用一精密之光學 設計及成本高昂之製造製程。以一液晶顯示裝置為例,液晶顯示 裝置包含例如液晶面板、TFT底板(backplane)及背光模組等關 鍵部件。液晶面板上之各單獨畫素受控於TFT底板以容許光透 過,藉此決定各該畫素在受到背光模組發出之光之照射時之明暗 狀態。由於顯示器日趨薄化之趨勢,背光模組之厚度及成本已成 為本領域中之主要技術問題。 201103120 各種用於背光模組之光源,例如冷陰極螢光燈(cold cathode fluorescent light ; CCFL)、電致發光(electroluminescent ; EL)元 件、發光二極體(light emitting diode ; LED )、有機 LED ( organic LED ; OLED)及聚合物 LED (polymer LED ; PLED)。出於成本 及成熟性之考量,通常使用由複數個發光二極體形成之一發光二 極體陣列作為一背光模組之光源。一般而言,背光模組可劃分成 直下式(direct-type )背光模組及側邊入光式(edge-type )背光模 組。 側邊入光式背光模組廣泛用於薄型液晶顯示器中。側邊入光式 背光模組包含一導光板及沿該導光板之周緣設置之該複數個發光 二極體,其中發光二極體之光進入導光板並照亮顯示器。然而, 在本領域中已知,大型光導板製造困難,並且用於大型顯示器時 成本高昂。此外,因各該發光二極體發出之光分佈於整個導光板 中,無法形成區域性開/關控制。因此,側邊入光式背光模組無法 用於需要進行局部調光之液晶顯示器。 用於顯示器之習知直下式背光模組直接將發光二極體設置於顯 示面板之下。為增強均勻性,需要設置一擴散板(diffuser)於發 光二極體前方。儘管直下式背光模組適用於大型顯示器,然可以 想見,直下式背光模組不僅過於複雜以致難以佈置光源於背板 上,且由於散射光之擴散板須與發光二極體間隔開,厚度過厚。 換言之,直下式背光模組在提供均勻亮度與提供薄化外觀之間面 臨兩難之選擇。 有鑒於此,需要為液晶顯示器背光模組應用開發一種用於大型 201103120 產品製造、超薄、能提供均勻面光源及局部調光特徵之新穎發光 裝置。 【發明内容】 本發明之主要目的在於提供一種新穎之發光裝置、顯示器及該 發光裝置之製造方法。該發光裝置包含複數個光源單元,該等光 源單元係設置於基板上並電性連接一圖案化電極層。該等光源單 元可透過該電極層選擇性地啟動,以開關一局部區域。 本發明提供一種新穎之發光二極體封裝結構,其不僅可以以一 超薄形式產生一均勻之面光源,且亦能夠採用傳統印刷電路板 (printed circuit board ; PCB )組裝方法及高生產量之塗佈製程來 製造。本發明所揭露之新穎發光二極體封裝結構可用於各種迫切 需要超薄形式之產品應用,包括液晶顯示器背光模組、POP展示 牌、裝飾性照明、燈箱、...等等。 更具體而言,該等光源單元係藉由如下方式製成:以一非常緊 密之形式直接接合複數個發光二極體裸晶粒至一印刷電路板 (printed circuit board ; PCB ),接著切割該印刷電路板以獲得大量 光源單元。然後,可組裝該等光源單元於基板上以用於大型產品。 本發明之另一目的在於提供一種新穎發光裝置及製造該發光裝 置之方法,其中用於形成内反射之反射層,以便無需使用習知之 擴散板即可使發光二極體之光在内部結構中行進。藉此,可大幅 降低整個封裝結構之厚度。 本發明之再一目的在於,較佳對光源單元採用發光二極體晶 201103120 粒。因發光二極體晶粒遠較封裝之發光二極體廉價,本發明將習 知塗佈製程與印刷電路板組裝製程相互整合於一起。本發明中採 用發光二極體晶_粒而非封裝之發光二極體。 本發明之又一目的在於提供一種用作一顯示器背光模組或用作 一燈箱之發光裝置《本發明之發光裝置可係為雙側照明。該發光 裝置可係為一自身呈現一影像之主動式光源,或係為一透過一面 板呈現一影像之被動式光源。 為達上述目的,本發明揭露一種顯示器及其發光裝置。該顯示. 器更包含堆疊於該發光裝置上之一面板。該發光裝置包含一基 板 電極層、至少一光源單元、一光散射層、一透明層及一反 射層。該電極層係圖案化於該基板上。該至少一光源單元係佈置 於該基板上,以電性連接該電極層。該光散射層覆蓋除發光二極 體晶粒區域外之該基板及該電極層,該透明層上覆於該光散射層 及該至少一光源單元,並且該反射層設置於該透明層上。一控制 電路電性連接該電極層,其能夠透過該電極層而選擇性地啟動該 複數個光源單元。 本發明更揭露一種用於製造該發光裝置之方法。該方法包括以 下步驟:提供一基板;形成一圖案化電極層於該基板上;佈置複 數個光源單元於該基板上,以電性連接該電極層,其中各該光源 單元包含一電珞板單元及封裝至該電路板單元之至少一積體電路 晶粒;塗佈一光散射層以覆蓋該基板及該電極層;形成上覆於該 光散射層及該至少一光源單元之一透明層;以及設置—反射層於 該透明層上。 201103120 為讓本發明之上述目的、技術特徵、和優點能更明顯易懂,下 文係以較佳實施例、配合所附圖式進行詳細說明。 【實施方式】 本發明係關於一種發光裝置,舉例而言,一種直下式背光模組。 第1圖顯示根據本發明之第一實施例之發光裝置1。發光裝置1 至少包含一基板101、圖案化於基板101上之一電極層105、及複 數個光源單元107。光源單元107係設置於該基板上,以電性連接 該電極層105。於本實施例中,其特徵在於,各該光源單元107 包含一電路板單元及封裝至該電路板單元之至少一發光二極體 (LED)晶粒。當然,發光裝置1更包含電性連接電極層105之 一控制電路(圖未示出)。控制電路105能夠根據所顯示之影像, 透過電極層105選擇性地啟動該複數個光源單元107,以達成局部 調光之目的。 s 基板101係為由例如A卜Ni、Fe、Cu、不銹鋼或合金製成之一 金屬板。基板101亦可由塑膠、玻璃、陶瓷或聚合物組合物製成。 發光裝置1更包含形成於基板101上之一絕緣層103。電極層105 係圖案化至絕緣層103上。發光裝置1更包含一光散射層108,塗 佈於基板101及電極層105上除發光二極體晶粒以外之區域,光 散射層108係由例如包含二氧化鈦顆粒(如商業白色漆)、碳化鈣 顆粒、氧化矽顆粒、金屬顆粒、空氣微孔、或複數種顆粒之一混 合物之一聚合物樹脂製成。發光裝置1更包含上覆於光散射層108 及光源單元107之一透明層109、設置於透明層109上之一反射層 111、及設置於反射層111上方之一螢光層115。反射層111形成 201103120 具有相對於光源單元107分佈之複數個反射圖案U3。 本發明之第二實施例係關於一種用於製造第一實施例之發光裝 置1之方法。首先,第2A圖至第4B圖顯示製造光源單元1〇7之 製程。如第2A及2D圖所示’提供包含複數個電路板單元107b 之一電路板107a ’例如一印刷電路板(printe(j circuit board ; PCB) 或一撓性印刷電路板(flexible printed circuit board ; FPC)。電路 板l'07a可係由壤氧樹脂或聚酿亞胺(p〇iyimide)製成,並於頂面 及底面形成有金屬層107c。金屬層l〇7c可係為Cu、A卜Sn、Ni、 或合金。各該電路板單元107b亦形成有通孔i〇7d,此不僅用於傳 導電流’且亦用於導熱。金屬層107c係有意地設計成具有一大之 表面覆蓋區域,以更佳地從發光二極體晶粒散熱。此外,有意地 形成連接頂部金屬層與底部金屬層之備援通孔l〇7d,以增強從頂 部金屬層l〇7c (此處接合有發光二極體晶粒)至底部金屬層i〇7c 之熱傳導’其中底部金屬層107c更連接至基板1〇1之電極層1〇5。 然後,如第3A-3D圖所示,將複數個發光二極體晶粒i〇7e相對 於電路板單元l〇7b接合至電路板l〇7a〇該接合製程可為打線接合 (例如,如第3B圖所示之雙打線接合及如第3C圖所示之單打線 接合)或覆晶接合(如第3D圖所示)。因在本發明中採用發光二 極體晶粒l〇7e而非封裝之發光二極體,故可降低發光裝置1之成 本並提高設計自由度。 應注意’光源單元107可包含一電路板單元107b及接合至電路 板單元107b之複數個發光二極體晶粒i〇7e。各該發光二極體晶粒 可為一紅色發光二極體晶粒、一綠色發光二極體晶粒、一藍色發 201103120 光二極體晶粒或一紫外光發光二極體晶粒。如第3E圖所示,三値 發光二極體晶粒l〇7e,即一紅色發光二極體晶粒、一綠色發光二 極體晶粒及一藍色發光二極體晶粒,接合至電路板單元l〇7b。金 屬層107c有意地設計用於電性連接圖案化電極層105,如第3F 圖所示。藉此,可透過電極層105獨立地控制發光二極體晶粒107e。 較佳地,如第4A及4B圖所示,藉由塗佈囊封劑107f至發光二 極體晶粒107e,囊封各該發光二極體晶粒107e。囊封劑107f包括 任何能施配至發光二極體晶粒107e上以於後續製程中包封和保護 發光二極體晶粒107e之習知膠。囊封劑107f可由例如環氧樹脂、 聚氨酯、聚碳酸酯、聚酯、聚矽氧型聚合物、或聚丙烯酸樹脂等 透明聚合物材料製成。囊封劑107f亦可由含有光散射顆粒之透明 聚合物材料製成,該等光散射顆粒例如為二氧化鈦顆粒、碳酸鈣 顆粒、氧化矽顆粒、金屬顆粒、或空氣微孔或複數種顆粒之一混 合物。或者,囊封劑107f可由用於將發光二極體晶粒107e所發出 之光轉換成白光之一螢光材料製成。 接著,執行一切割或鋸割製程以形成複數個光源單元107。以此 方式,可非常緊密地製成分別包含一電路板單元107a及封裝至電 路板單元107a之一發光二極體晶粒107e之複數個光源單元107, 以提供大量之光源單元,進而降低成本。舉例而言,大小為100 毫米xlOO毫米之印刷電路板107a可切割成400 (即20x20)個光 源單元107,其中各該光源單元107之大小為5毫米x5毫米。於 該切割或鋸割製程後,接著以一所需取向放置該等光源單元107 於一托盤中,俾利於後續製程中之取放。 201103120 此外’可同時執行以下製程。如第5A及5B圖所示,提供基板 101。基板101可係為一金屬板或金屬薄片,由鋁、銅、鐵、不銹 鋼、或任意類型之合金製成。其亦可由塑膠、陶瓷、玻璃或任意 複合材料製成。在基板101係為導電性之情形中,將需要一絕緣 層103 (或一介電塗層)形成於基板101上。或者,絕緣層103 可係為任意具有低導電率之材料,例如聚合物塗層(例如聚苯乙 烯、聚甲基丙烯酸曱酯、聚氯乙烯、聚氨酯、聚醯亞胺、聚醯胺、 聚碳酸酯、聚丙烯酸樹脂等等)、任意類型之漆(例如白色漆、油 基或水基漆等等)或任意複合塗層材料。或者,絕緣層103可藉 由電鍍或藉由利用化學或電性方法(例如氧化或陽極處理)之表 面處理直接形成於金屬板之表面上。 然後,如第6A及6B圖所示,將電極層105圖案化於基板101 (或絕緣層103)上。較佳地,電極層1〇5可由銀膠/墨水、碳黑 膠/墨水、銅膠/墨水、或聚合物樹脂與導電顆粒(例如Ag、Au、 A1、Cu、Fe或碳黑)之任意組合形成。習知之塗佈方法,例如絲 網印刷(screen printing)、柔性版印刷(flexo printing)、凸版印刷 (stamp printing )、喷墨印刷(inkjet printing )、凹版印刷(gravure printing )、及熱轉印(thermal transferring )可適用於將電極層1〇5 圖案化。或者’可預先形成一導電層於絕緣層1〇3上,然後蝕刻 之而形成圖案化電極層105。再或者,基板101上之圖案化電極層 105可係為一傳統印刷電路板。電極層1〇5之圖案較佳被設計於例 如X及Y方向上。
參見第7A-7C圖,其中第7A圖係為俯視平面圖,而第7B及7C 201103120 圖係為剖視圖’光源單元107可佈置於基板ιοί上,以電性連接 電極層105。藉此’控制電路可根據需要分別控制各該光源單元 107。如第7C圖所示,為確保光源單元ι〇7之電路板單元1〇7b粘 附至基板101 ’可額外塗佈一滴膠117於電路板單元107a之下。 於光源單元107置於基板101後,使其經受一烘烤(baking)製程。 烘烤溫度及烘烤時間係取決於電極層1〇5之類型。 為增強背光模組1之亮度效能,設置光散射層1〇8以覆蓋除發 光二極體晶粒區域以外之基板101及電極層1〇5,如第8圖所示。 如同其中一種製造方法,設置一遮罩(mask)於基板101上,該 遮罩係設計用於僅遮蓋光源單元107上之發光二極體晶粒區域。 然後,塗佈(例如,藉由喷塗、溶液塗佈或其它塗佈製程)或沉 積(化學或物理方式)光散射層108於基板上位於發光二極體晶粒 區域以外之區域中,光散射層108例如為商業白漆、Ti02膏、CaC03 膏、含白色顏料或含任何閃光顆粒之聚合物樹脂、或空氣微孔》 最後,移除遮罩,使發光二極體晶粒區域保持敞開而不被光散射 層108覆蓋。可能需要對光散射層108實施一烘烤製程,以移除 任何多餘之溶劑並確保光散射層108乾燥。 接著,參見第9圖,塗佈透明層109於光散射層108及光源單 元107上並覆蓋整個區域。透明層109可由任意類型之透明聚合 物材料形成,例如由石夕橡膠(silicon rubber )、聚氨酯 (polyurethane)、聚苯乙烯(polystyrene)、聚酯(polyester)、聚 碳酸酯(polycarbonate)、聚酿亞胺(polyimide)、聚丙稀酸樹脂 (polyacrylic resin )、或多於一種類型之透明聚合物材料之一組 12 201103120 合。若與反射層111 -起使用,則透明I 1〇9 封劑赚圖未示出)之折射率相匹配。 ’、囊 參見第10圖,接著設置反射層111於透明層109上,反射層 具有相對於光源單元1()7分佈於—軟性基板上之複數個反射圖案 113 ’ S亥軟性基板較佳係由任意類型之透明塑膠(例如PET、PEN、 PU PS、PC、PE、pp ' PI、或ABS )製成,或是可圖案使 光穿透之㈣基板(m_ fGil)亦或其他金屬合金薄片。反射圖案 113之分佈方式使光源單元107上方之圖案具有一更高之密度。藉 此,反射層111有助於光源單元1〇7發出之光朝在正下方未設置 有發光二極體之區域行進。反卵案113係利用—習知真空沉積 製矛王(例如濺射、熱沉積或離子束沉積),藉由沉積一薄層金屬膜 於塑勝基板上而製成。金屬膜之反射圖案113可藉由黃光製程、 直接餘刻製程、剝離製程(丨pr〇cess )、…等等製成。金屬膜 可包含Ag、A卜Ni、Cr、Mo、Cu、Au或Pt。反射圖案113亦可 藉由將白色漆或反射漆圖案化至塑膠基板上而形成。 最後,形成螢光層115於反射層ιη上。如第UA圖所示,螢 光層115可直接塗佈於圖案化之反射層ιη上。或者,螢光層ιΐ5 可塗佈於一透明塑膝膜120上,然後設置至反射層1U上,如第 11B圖所示。螢光層115包含均勻混合於一透明聚合物樹脂中之螢 光體顆粒123 ’該透明聚合物樹脂例如係為矽橡膠、聚氧醋、聚苯 乙稀、聚酯、聚碳酸酯、聚酿亞胺、聚丙稀酸樹脂、或多於一種 類型之透明聚合物材料之組合。螢光層115可藉由眾所習知之塗 佈製程形成’例如絲網印刷、狹縫模具式塗佈(sU)t(liec〇ating)、 r r- 1 13 201103120 到刀塗佈(blade coating)、幕塗(curtain coating)、…等等 為增 強總體光輸出,可以不同之結構組合將光散射顆粒125(例 9 化鈦、碳酸鈣、氧化矽、空氣微孔、…等等)包含於螢光層 中,如第11C-11H圖所示。如第lie圖所示,螢光體顆教 “及 如第 光散射顆粒125混合於螢光層115中後塗佈至反射層lu 11D圖所示’螢光體顆粒123及光散射顆粒125混合於螢光層 中後塗佈至透明塑膠膜120並接著設置至反射層U1上。如 第11£ 所示,螢光體顆粒123及光散射顆粒125依序塗佈至透明塑膠犋 120並接著設置至反射層111上。如第11F圖所示,螢光體顆板 123及光散射顆粒125分別塗佈至透明塑膠膜120並接著堆叠於反 射層111上。如第11G圖所示’螢光體顆粒123及光散射顇粒 分別直接塗佈至反射層111上》 螢光層115用於將發光二極體發出之藍光或紫外光轉換成白 光。舉例而s ’當發光一極體晶粒107e係為藍光發光二極體咬 「紫外光」發光二極體時,由螢光材料製成之螢光層U5可將藍 光或紫外光轉換成白光後從背光模組1發出》 或者’不設置螢光層115於反射層1Π上,而是添加榮光材料 至如第4A圖所述之囊封劑107f。舉例而言,如第llH圖所示, 添加螢光體顆粒123至囊封劑107f«再舉例而言,如第lu圖所 示,同時添加螢光體顆粒123及光散射顆粒125二者至囊封劑 107f。 為更增強發光二極體光源之光輸出,可如上文所述在發光裝置i t包含複數個光學膜片《舉例而言,如第12A圖所示,設置一或 201103120 二片增亮膜(brightness enhanced film; BEF) 131 於螢光層 115 之頂部,然後設置一擴散膜133於增亮膜131之頂部。再舉例而 言,如第12B圖所示,設置增亮膜131於反射層111與螢光層115 之間,並設置擴散膜133於螢光層115之頂部。可根據實際產品 應用而改變螢光層115、增亮膜131與擴散膜133間之其它結構配 置。 應注意,封裝至光源單元107之發光二極體晶粒之數量並無限 制。第13A-13C圖顯示本發明之第四實施例。於本實施例中’接 合複數個發光二極體晶粒107e至一個電路板單元107b’以形成一 個光源單元107。金屬層l〇7c被有意地設計成電性連接圖案化電 極層105,如第13B圖所示。圖案化電極層1〇5亦被設計用於達 成X-Y被動式矩陣驅動。藉此,可透過電極層1〇5分別控制各發 光二極體晶粒107e。當然,可更組裝複數個光源單元107至基板 1〇卜並與電極層105連接,如第13C圖所示。或者,如第13D-13F 圖所示,光源單元107與電極層105間之電性連接亦可藉由在基 板101上形成扎或凹槽而形成,其中使孔之尺寸及形狀適合於光 源單元107之尺寸及形狀。基板1〇1之厚度可經選擇以匹配電路 板107a之厚度,俾使光源單元1〇7將緊緊地落入孔中,其中頂部 金屬層107c係與電極層1〇5處於同一平面中。光源單元107之頂 部金屬層l〇7c與電極層1〇5間之電性連接可藉由塗覆任意類型之 導電膠104而形成。應注意,亦可由一導電膠帶或藉由塗覆一焊 料於頂部金屬層107c與電極層1〇5之間來取代導電膠。第13D圖 顯示光源單元107之電路板單元i〇7b之佈局,第13E及13F圖顯 示光源單元107在組裝於基板ι01上之後之示意性結構。為防止 15 201103120 光源單元107掉出基板101,可設置一支撐膜片102於基板101 之下。 第五實施例揭露一種在光源單元107之間形成有分隔部之發光 裝置1。如第14A及14B圖所示,複數個隔離柵格結構121形成 於透明層109内,以分隔該複數個光源單元107。可藉由絲網印 刷、喷墨印刷、壓印、或任何其他直接圖案印刷製程而預先形成 隔離栅格結構121,然後塗佈透明層109。或者,可預先形成透明 層109,然後將隔離栅格結構121植入透明層109中,此可藉由任 何習知之成型製程或刀刃衝壓(knife punching )方法達成。應注 意,並不限制隔離栅格結搆121之材料,且其較佳係為白色且不 透明或半透明,以阻擋來自相鄰光源單元107之光。本實施例之 發光裝置1係用於使每一單獨光源單元107能夠開關而不受任何 相鄰單元干擾,因此可獲得具有銳利晝素影像之一接通光源。更 具體而言,藉由控制光源單元107開關,發光裝置1適可呈現具 有界限分明之形狀(例如本發明中所例示之正方形)之一影像。 本發明之第六實施例係關於一種雙面背光模組。如第15A圖所 示,可利用上述相同製程複製如上所述之另一發光裝置於基板101 之另一側。藉此,獲得共享同一基板101之背對背發光裝置。應 注意,基板101較佳係由一金屬板或金屬薄片製成,其提供良好 之散熱。或者,如第15B圖所示,在基板101透明之情況下,即 使僅提供一組光源單元107,亦可以一背對背方式組裝另一類似之 背光模組。光源單元107發出之光將被反射並進入背光模組。將 獲得兩個相對之均勻照明。 16 201103120 本發明之第七實施例係提供一種包含前述實施例中所揭露之發 光裝置1之顯示S3。顯示H3更包含堆疊於發光裝置1Jl之一面 板。參見第16A圖,該面板係為一用於顯示影像之液晶面板161。 參見第16B圖’該面板係為一電润濕面板163,其中設置有含營 光體顆粒之油滴。電潤濕面板163堆疊於發光裝置丨上而形成一 電潤濕面板顯示器(electrowetting panei心口丨叮;ewd ) 5。藉由. 施加一電壓至電潤濕面板,控制油滴集中或散開。可以想見,可 從僅具有一種類型之光源之發光裝置丨選擇性地發出至少二種不 同顏色。 參見第16C圖,該面板係為一觸控面板165,其電性連接至一 控制積體電路(integrated circuit; 1C) 169»另一電性裝置,例如 一薄型揚聲器167,亦可應用於本實施例中。參見第16D圖,該 面板係為一太陽能面板171,其電性連接至一控制積體電路175 ^ 一蓄電池173更被提供以儲存電力並為發光裝置丨提供電力。 綜上所述,本發明揭露適用於大尺寸之直下式發光裝置。該發 光裝置能夠在超薄形式内產生一均勻之面光源,並能夠透過電極 層選擇性地控制發光二極體晶粒,藉此提供局部調光特徵。 上述之實施例僅用來例舉本發明之實施態樣,以及闡釋本發明 之技術特徵,並非用來限制本發明之保護範疇。任何熟悉此技術 者可輕易元成之改變或均等性之安排均屬於本發明所主張之範 圍,本發B月之權利保護範圍應以申請專利範圍為準。 【圖式簡單說明】 第1圖係為本發明之一實施例之發光裝置之示意圖; 17 201103120 第2A圖至第4B圖係為光源單元製造製程之示意圖; 第5A及5B圖係為一種用於形成絕緣層於基板上之製程之示意 圖; 第6A及6B圖係為一種用於圖案化電極層之製程之示意圖; 第7A-7C圖係為一種用於佈置光源於基板上之製程之示意圖; 第8圖係為一種用於塗佈光散射層之製程之示意圖; 第9圖係為一種用於形成透明層之製程之示意圖; 第10圖係為一種用於設置反射層之製程之示意圖; 第11A-11I圖係為一種用於形成螢光層之製程之示意圖; 第12A及12B圖係為本發明第三實施例之示意圖; 第13A-13F圖係為本發明第四實施例之示意圖; 第14A及14B圖係為本發明第五實施例之示意圖; 第15A及15B圖係為本發明第六實施例之示意圖; 第16A-16D圖係為本發明第七實施例之顯示器之示意圖。 【主要元件符號說明】 1 :發光裝置 3 :顯示器 5 :電潤濕面板顯示器 101 :基板 102 :支撐膜片 103 :絕緣層 104 :導電膠 105 :電極層 201103120 107 :光源單元 107b :電路板單元 107c 107d :通孔 107e l〇7f:囊封劑 108 : 109 :透明層 111 : 113 :反射圖案 115 : 117 :膠 120 : 121 :隔離柵格結構 123 : 125 :光散射顆粒 131 : 133 :擴散膜 161 : 163 :電潤濕面板 165 : 167 :薄型揚聲器 169 : 171 :太陽能面板 173 : 175 :控制積體電路 107a :電路板 :金屬層 :發光二極體晶粒 光散射層 反射層 螢光層 透明塑膠膜 螢光體顆粒 增亮膜 液晶面板 觸控面板 控制積體電路 蓄電池 19

Claims (1)

  1. 201103120 七、申請專利範圍: 1. 一種發光裝置,包含: 一基板; 一電極層,圖案化於該基板上; 至少一光源單元,配置於該基板上,以電性連接該電極 層; 一光散射層,覆蓋該基板及該電極層; 一透明層,覆於該光散射層及該至少一光源單元上;以 及一反射層,設置於該透明層上。 2. 如請求項1所述之發光裝置,其中該反射層具有相對於該至 少一光源單元分佈之複數個反射圖案。 3. 如請求項2所述之發光裝置,更包含設置於該反射層上方之 一螢光層(phosphor layer ),其中該螢光層係塗佈至該反射層 上或塗佈於欲設置至該反射層上之一透明塑膠膜片上。 4. 如請求項3所述之發光裝置,其中該螢光層包含添加於其中 之複數個光散射顆粒。 5. 如請求項4所述之發光裝置,其中該等光散射顆粒係選自由 如下組成之一群組:二氧化鈦顆粒、碳化鈣顆粒、二氧化矽 顆粒、金屬顆粒、空氣微孔、及其組合。 6. 如請求項1所述之發光裝置,其中該至少一光源單元包含一 電路板單元及電性連接至該電路板單元之至少一發光二極體 (light emitting diode ; LED )晶粒。 7. 如請求項6所述之發光裝置,其中該電路板單元包含一頂部 金屬層、一底部金屬層、及連接該頂部金屬層與該頂部金屬 20 201103120 層之複數個通孔(via hole)。 8. 如請求項7·所述之發光裝置,其中該至少一發光二極體晶粒 係打線接合(wire bonded)或覆晶接合(flip chip bonded)至 該電路板單元之該頂部金屬層。 9. 如請求項8所述之發光裝置,其中該底部金屬層電性連接至 該電極層。 10. 如請求項8所述之發光裝置,其中該基板係形成有用於容置 該至少一光源單元之至少一凹槽,且該頂部金屬層電性連接 至該電極層。 11. 如請求項6所述之發光裝置,其中該至少一發光二極體晶粒 係選自由如下組成之一群組:一紅色發光二極體晶粒 '一綠 色發光二極體晶粒、一藍色發光二極體晶粒、一紫外光發光 二極體晶粒、及其組合。 12. 如請求項6所述之發光裝置,其中該至少一發光二極體晶粒 包含三個發光二極體晶粒,包括一紅色發光二極體晶粒、一 綠色發光二極體晶粒及一藍色發光二極體晶粒。 13. 如請求項6所述之發光裝置,其中該至少一光源單元更包含 包封該至少一發光二極體晶粒之一囊封劑(encapsulant)。 14. 如請求項13所述之發光裝置,其中該囊封劑係為一透明聚合 物樹脂與至少一種螢光材料之一混合物。 15. 如請求項.13所述之發光裝置,其中該囊封劑係為一透明聚合 物樹脂與複數個光散射顆粒之一混合物,該等光散射顆粒係 選自由如下組成之一群組:二氧化鈦顆粒、碳化鈣顆粒、二 氧化矽顆粒、金屬顆粒、空氣微孔、及其組合。 21 201103120 !6.如請求項13所述之發光裝置’其中該囊封劑係為一透明聚合 物樹脂、至少一種螢光材料及複數個光散射顆粒之一混合物。 17.如請求項1所述之發光裝置,其中該光散射層係為一聚合物 樹脂與複數個光散射顆粒之一混合物,該等光散射顆粒係選 自由如下組成之一群組:二氧化鈦顆粒、碳化鈣顆粒、二氧 化石夕顆粒、金屬顆粒、空氣微孔、及其組合。 18 *如請求項1所述之發光裝置,更包含設置於該反射層上方之 一光學膜片(optical sheet ),該光學膜片係選自由如下組成之 一群組:一增亮膜(brightness enhanced film ; BEF )、一擴散 膜(diffuser fiim)、及其組合。 19 JL •如請求項1所述之發光裝置,更包含垂直於該基板形成之複 數個隔離柵格結構,用以分隔該至少一光源單元。 2〇,如請求項1所述之發光裝置,更包含對稱設置於該基板之另 —側之另一電極層、另一光源單元、另一電極層及另一反射 層。 2ι — ^ •一種顯示器,包含一面板及如請求項1所述之一發光裝置, 其中該面板係疊置於該發光裝置上。 22 •如請求項21所述之顯示器,其中該面板係選自由如下組成之 群組:一電潤濕面板(electrowetting panel )、一液晶面板、 一觸控面板(touch panel )、友一太陽能面板(solar cell Panel) 〇 23 —访 ’一種用於製造一發光裝置之方法,該方法包含以下步驟: 提供一基板; 形成一圖案化電極層於該基板上; . 22 201103120 配置至少一光源單元於該基板上,以電性連接該電極層; 塗佈一光散射層以覆蓋該基板及該電極層; 形成一透明層覆蓋該光散射層及該至少一光源單元之; 以及 設置一反射層於該透明層上。 24. 如請求項23所述之方法,於該配置該複數個光源單元之步驟 之前,更包含以下步驟: 提供一電路板; 接合複數個發光二極體(light emitting diode ; LED)晶 粒至該電路板;以及 切割該電路板以形成至少一光源單元。 25. 如請求項23所述之方法,更包含以下步驟: 設置一螢光層於該反射層之上。 23
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