1285449 成為不良品，無法使用。如此一办 、 & I —入4 S 及，晶圓上所有的晶粒則 無法凡全使用，晶粒利用率不哀 袓之生產忐太&古^巧，使得發光二極體封裝模 、、且之生產成本居冋不下，進而使 昂貴。 炅许背光模組之成本也相當 有鑑於上述課題，本案發明 上之發光二極體晶粒利用率不高，亟W、種可以解決晶圓 本居高不下之問題的「發光單元並k成月光板組生產成 u J 0 【發明内容】 有鐘於上述課題，本發明夕 ^甘4人π , Α之目的為提供一種發光單 π，其包含至少一發光二極體封 ^ ^ ^ X y 7展私組，發光二極體封裝 模組係包含兩個發光二極體晶教 @曰U, 9位从發出一目標波峰波長。 緣疋，為達上述目的，依太 m 本發明之背光模組包含-發 先一極體封裝模組以及一光學蓮 心人名番触 子4嗅。發光二極體封裝模組 係包含一承載體、一第一晶粒以 «始 ^ 及一第二晶粒’第一晶粒 置於承載體，發光二極體封裝模組係用以 ^出-目W峰波長，第一晶板係具有—第一波峰波長， 第-波峰波㈣大於目標糾波長，第二錄係具有一第 二波峰波長H峰波長係小於目標波峰波長，第一波 峰波長與第二波峰波長係屬於同—色系，其中第—晶粒與 第二晶粒係相距一第一距離。光學薄膜係鄰設於發光二極 體封裝模組，光學薄膜係具有一可視區，發光二極體封裝 模組與可視區或與可視區之邊緣係具有最短的一第二距 離，第一距離係小於第二距離。 8 1285449 承上所述，因依本發明之一 二/ . 發光二極體封裝模組以及一：先::係包含至少- 長。鱼極體絲以發出—目標波學波 食“知技*相比，發光二極 粒及第二晶粒，曰筮一、士也、丄 衣稹、、且係具有弟日曰 一"M —波峰波長與第二波峰波長係屬於同 晶粒與第二晶粒係相距-第-距離，而發光 封裝模組與可視區或與可視區之邊緣係具有最短 忠-距離’其中第一距離係小於第二距離。如此一 叙曰去發月之發光單疋可藉由挑選具有適當匹配波長之複 日日’立’也就是可組合出目標波峰波長之複數晶粒 ，將兩 個以上之複數晶粒封裝在—起而形成發光二極體封裝模 組。因此’各個發光二極體之封裝模組可使人眼在目標波 峰波長處，感受到宛如二顆具有目標波峰波長之發光二極 體之發光強度。另外’藉由挑選匹配晶粒的過程，封裝業 者即可放寬良品晶粒的波峰波長的範圍，義能提昇同一 晶圓或同一批次晶圓之晶粒利用率，並降低發光單元之 料及減少原物料的浪費。 Μ 【實施方式】 以下將參照相關圖式，說明依本發明之發光單元之、 數實施例。 複 首先，請參考圖4至圖U以說明本發明第一實施 之發光單元。 如圖4所示，發光單元30主要包含一發光二極體封 1285449 裝模組40以及一光學薄膜50。本實施例中，發光單元3〇 係以一直下式發光單元30為例。1285449 Become a defective product and cannot be used. In this way, & I - into 4 S and all the crystal grains on the wafer can not be used in full, the grain utilization rate does not mourn the production of the 忐 too & ancient ^ Qiao, making the LED package And the production cost is too high, which makes it expensive. The cost of the backlight module is also quite in view of the above problems. In the invention, the utilization ratio of the light-emitting diode is not high, and the light-emitting unit can solve the problem that the wafer is high. The moonlight plate group is produced into a U J 0 [Summary of the Invention] In the above-mentioned subject, the present invention has the object of providing a light-emitting single π comprising at least one light-emitting diode package ^ ^ ^ X y 7 exhibition private group, the LED package module contains two LEDs @晶U, 9 bits from a target peak wavelength. The backlight module comprises a first-in-one package and an optical lotus-like touch. The light-emitting diode package comprises a carrier, a first die, and a second die. The first crystal grain of the crystal grain is placed on the carrier, and the light emitting diode package module is used for the wavelength of the W-peak, the first crystal plate has a first peak wavelength, and the first wave (four) is larger than the target Wavelength, the second recorded system has a second peak wavelength H peak wavelength system is smaller than the target peak wavelength The first peak wavelength and the second peak wavelength belong to the same color system, wherein the first crystal grain is separated from the second crystal grain by a first distance. The optical film is adjacent to the light emitting diode package module, and the optical film is disposed. The system has a visible area, and the light-emitting diode package module has a shortest second distance from the visible area or the edge of the visible area, and the first distance is smaller than the second distance. 8 1285449 According to the above, One of the inventions II. A light-emitting diode package module and a: first:: system contains at least - long. Fish body wire to emit - target wave learning wave food "skills * compared to light-emitting diodes and Two grains, 曰筮一,士也,丄衣稹, and the system has a diver's &一"M—the peak wavelength and the second peak wavelength belong to the same grain and the second grain line are separated - the first distance And the light-emitting package module and the visible area or the edge of the visible area have the shortest loyalty-distance 'where the first distance is less than the second distance. Such a light-emitting unit can be encapsulated in two or more complex crystal grains by selecting a plurality of crystal grains having a suitable matching wavelength, that is, a plurality of crystal grains capable of combining the target peak wavelengths. The light emitting diode package module is formed. Therefore, the package module of each of the light-emitting diodes can cause the human eye to feel the luminous intensity of two light-emitting diodes having a target peak wavelength at the target peak wavelength. In addition, by selecting the process of matching the die, the packager can relax the range of the peak wavelength of the good die, and improve the grain utilization of the same wafer or the same batch of wafers, and reduce the material of the light-emitting unit and reduce Waste of raw materials. [Embodiment] Hereinafter, a numerical embodiment of a light-emitting unit according to the present invention will be described with reference to the related drawings. First, please refer to Fig. 4 to Fig. U to explain the light emitting unit of the first embodiment of the present invention. As shown in FIG. 4, the light-emitting unit 30 mainly includes a light-emitting diode package 1285449 assembly module 40 and an optical film 50. In this embodiment, the light-emitting unit 3 is exemplified by the direct-type light-emitting unit 30.
請參照圖5所示，其係為沿圖4中之直線B-B，之發光 一極體封裝模組40之剖面示意圖。發光二極體封裝模組 4〇係包含一承載體41、一第一晶粒42以及一第二晶粒 43 °其中’發光二極體封裝模組40係用以發出一目標波 峰波長；11 (target peak wavelength)，目標波峰波長可例如 是介於615nm至650nm之間的紅光、介於515nm至555nm 之間的綠光、或波峰波長約介於455nm至485nm之間的 二光。也就是說’目標波峰波長可由業者自行訂定規格， 為發光二極體封裝模組40最後讓人眼接受到之波峰波 長。而發光二極體封裝模組4〇可利用人眼之視覺暫留現 象’使第一晶粒42及第二晶粒43不論是同時發光或不同 時發光，均能得到目標波峰波長。 八當然’發光二極體封裝模組40之目標波峰波長也可 刀別定義為介於620.5nm至645.0nm之間的第一紅光 L波長約介於612 5nm至62〇 5腿之間的第二 :，（R2)、波峰波長約介於52〇nm至55〇nm之間的第一 光（Gl)、波峰波長約介於490nm至520nm之間的第二 二光（G2)、波峰波長約介於460nm至490nm之間的第一 二“（1)或波峰波長約介於44〇nm至460nm之間的第 二藍光（B2)。 、μ參照圖5，第一晶粒42及第二晶粒43係分別設置 於承载體41。其中，承載體41可以為_基板或一導線架。 1285449 本貫施例中，發光二極體之封裝形態及基板之材質並不加 艮制。舉例而言，當承載體41為基板時，可為透明基 板（例如為玻璃基板），也可為不透明的基板。而封裝的 ^式可以如圖5中為表面封裝（Surface Mounting Device, SMD)之形態，第一晶粒42及第二晶粒43也可藉由於基 板上之内導線（interconnection) 44而與外界電性進行訊 號之/冓通’而不需要打引線（wire bonding )，再利用封膠Referring to FIG. 5, it is a cross-sectional view of the light-emitting diode package module 40 along the line B-B in FIG. The light emitting diode package module 4 includes a carrier 41, a first die 42 and a second die 43. The 'light emitting diode package module 40 is used to emit a target peak wavelength; 11 (target peak wavelength), the target peak wavelength may be, for example, red light between 615 nm and 650 nm, green light between 515 nm and 555 nm, or two light having a peak wavelength between about 455 nm and 485 nm. That is to say, the target wave wavelength can be set by the manufacturer himself, which is the peak wave length that the light-emitting diode package module 40 finally receives. The light-emitting diode package module 4 can use the visual persistence phenomenon of the human eye to enable the first crystal grain 42 and the second crystal grain 43 to emit light at the same time or simultaneously, and the target peak wavelength can be obtained. Eight of course, the target peak wavelength of the LED package module 40 can also be defined as a first red light L between 620.5 nm and 645.0 nm, which is between 612 5 nm and 62 〇 5 legs. Second: (R2), a first light (G1) having a peak wavelength between about 52 〇 nm and 55 〇 nm, and a second two light (G2) having a peak wavelength between about 490 nm and 520 nm. a first two "(1) or a second blue light having a peak wavelength between about 44 〇 nm and 460 nm (B2) having a wavelength between about 460 nm and 490 nm. Referring to FIG. 5, the first die 42 and The second die 43 is disposed on the carrier 41. The carrier 41 can be a substrate or a lead frame. 1285449 In this embodiment, the package shape of the LED and the material of the substrate are not clamped. For example, when the carrier 41 is a substrate, it may be a transparent substrate (for example, a glass substrate) or an opaque substrate. The package may be a surface mount device (SMD) as shown in FIG. 5 . The first die 42 and the second die 43 may also be formed by an internal connection 44 on the substrate. Sector number information for the electrical / ten billions through 'without the need to play the lead (wire bonding), then use sealant
材料45保濩第一晶粒42與第二晶粒43。其中，第一晶粒 42及第二晶粒43也可利用覆晶的形式而安裝 於承载體41。 、朴如圖6所示，當然，第一晶粒42及第二晶粒43也可 以藉由複數引線（wiring) 46而與承載體41電性連接，再 利用^膠材料45保護第—晶粒42與第二晶粒43。 = 7,當承賴41，為導線架時，則封裝的型式 貝、二、線架封裝（leadframe package)之形態。另外， 二:配:其Γ粒42及第二晶粒43也可以堆疊的方式來 e又置再配&基板及導_來作為承載體41，。 再請參照圖5及圖9所示 第 一波峰波長；U，第一、皮峰涂 . 係八有一弟 。波峰波長1係於目標波峰波長入 t 一日日 係具有一第二波峰波長λ2，第-波峰波| 入2係小於目標波峰波d甘士 # 弟-/皮蜂波長 又Τ疫長久t。其中，第一晶粒42及第一日 粒43係屬於同一色李的本〜雄 42及弟一曰日 η都料“从先弟曰粒42及第二晶粒 λ、、八/、々光，例如為綠色、青綠色，且第一晶+ 42及第二晶粒43可為回一曰问L匕女 且笫日日粒 為冋一日日SJ上所產出之晶粒。當然， 11 1285449 第日日粒42及第—日日粒43也可以是由不同晶圓但是為同 -批次所生產出之晶粒，本實施例中，第—晶粒42及第 二晶粒4 3係關-晶顧產出之絲為例。 於挑選晶粒時’需先量測各個晶粒之波峰波長，以挑 選出適合封裝在-起，波峰波長可互相匹配的複數晶粒。 其中’只要第-晶粒42之第一波峰波長^與第二晶粒43 之第二波峰;皮長几2之差值（△ λ)小於5Gnm，即可互相 匹配，放置於同一發光二極體封裝模組4〇中。 > 本實施例中，係以發出目標波峰波長、為”如^^之 發光二極體封裝模組40為例。當第一晶粒42與目標波峰 波長之差值等於第二晶粒43與目標波峰波長；^之差值， 例如：第一波峰波長係約為535nm，第二波峰波長入2 係約為525nm，並假設第一晶粒42與第二晶粒43之發光 效率相同時，提供相同之電流給第一晶粒42及第二晶粒 43，不論是第一晶粒42及第二晶粒43同時發光或快速輪 , "il發光時，人眼感受到目標波峰波長值MOnm所呈現之發 光強度，係為第一晶粒42及第二晶粒43於目標波峰波長 ' 值530nm處之光強度之加總（如虛線之波長頻譜所示）。 ' 也就是說，藉由波長的匹配，將第一晶粒42及第二晶粒 43封裝在一起後，第一晶粒42與第二晶粒43可組合出目 標波峰波長λ t，使得人眼無法分辨複數晶粒之間有波長差 值，宛如拿二顆可發出目標波峰光波長;^之晶粒封襞一起 一樣。 請參照圖5及圖10，本實施例中，係以發出目標波峰 12 1285449 波長又1為53〇nm之發光二極體封裝模組忉為例。當第一 晶粒42與目標波峰波長之差值為第二晶粒杓與目標波峰 波長之差值的一半時，例如··第一波峰波長“係約為 535nm ’弟一波峰波長a 2係約為520nm，假設第一晶粒 、 42與第二晶粒43之發光效率也相同之情形下，可提昇第 • 一晶粒42之電流或電壓值至二倍，以使第一晶粒42之發 光強度為第二晶粒43之二倍。如圖1〇所示，當第一晶粒 42及第二晶粒43同時發光或快速輪流發光時，人眼感受 • 到目標波峰波長值λ t處所呈現之光強度，係為第一晶粒 42及第二晶粒43於目標波峰波長值；^處之光強度之加總 (如虚線之波長頻譜所示）。 較佳的狀況下，第一波峰波長;^與第二波峰波長入^ 之差值係小於30nm之内，組合出之目標波峰波長之發光2 強度較強，且可形成一主要波峰（main peak)。另外f就 鼻疋第一日日粒42與弟一晶粒43之波長加總後，無法形成 單一主要波峰，但由於發光二極體之發光純度較高，人眼 馨 依舊無法辨識出色彩飽和度（Color Saturation)上的損失。 ' 再請參考圖4所示，發光單元30更可包含—殼體6〇 __ 及一固定板70，發光二極體封裝模組40係容置於殼體6〇 且設置於固定板70。本實施例中，發光單元3〇係以包含 複數發光二極體封裝模組40為例，當然，發光二極體封 裝模組40之數量，可依實際產品設計需求而定，於此不 作限制。另外，殼體60之材質可為金屬或為塑膠，殼體 60之大小及形狀可依發光單元30實際所需之大小及形式 13 1285449 來設計，例如：殼體60可為一框體、一平板狀或其他形 狀。而固定板70係用以承載發光二極體封裝模組4〇，材 質可為金屬或塑膠或者固定板70可為一印刷電路板，另 外’固定板70也可為兼具散熱功能的散熱板。 光學薄膜50可包含一擴散片、一導光板、一稜鏡片 或其組合。本實施例中，發光單元30係以直下式為例， 因此，光學薄膜50係為一擴散片，用以協助光線能均勻 擴散。Material 45 holds first die 42 and second die 43. The first die 42 and the second die 43 may be mounted on the carrier 41 by flip chip. As shown in FIG. 6, of course, the first die 42 and the second die 43 may be electrically connected to the carrier 41 by a plurality of wirings 46, and the first layer may be protected by the bonding material 45. The particles 42 and the second crystal grains 43. = 7, when relying on 41, for the lead frame, then the shape of the package type of shell, second, leadframe package (leadframe package). In addition, the second: the: the bismuth 42 and the second dies 43 can also be stacked to re-distribute the & substrate and the guide _ as the carrier 41. Referring again to Figures 5 and 9, the first peak wavelength; U, first, Pifeng coating. The peak wavelength 1 is at the target peak wavelength and enters a day. The system has a second peak wavelength λ2, and the first wave wave | into the 2 system is smaller than the target wave wave d Ganshi #弟-/皮蜂 wavelength and the plague is long t. Among them, the first crystal grain 42 and the first crystal grain 43 belong to the same color Li, the original ~ male 42 and the younger one of the η 都 all "from the ancestors 曰 42 and the second crystal λ, 八 /, 々 The light, for example, green, cyan, and the first crystal + 42 and the second crystal 43 can be returned to the 匕 匕 笫 笫 笫 笫 笫 笫 笫 笫 笫 笫 笫 笫 笫 当然 当然 当然 当然 当然 当然 当然 当然 当然 当然 当然 当然, 11 1285449 The first day grain 42 and the first day grain 43 may also be grains produced by different wafers but of the same batch, in this embodiment, the first grain 42 and the second grain 4 3 series off - the crystal of the output of the crystal is taken as an example. When selecting the grain, the peak wavelength of each grain should be measured first to select a plurality of crystal grains suitable for packaging and matching the peak wavelengths. Wherein 'as long as the first peak wavelength of the first-grain 42 and the second peak of the second crystal 43; the difference (? λ) of the skin length of 2 is less than 5Gnm, which can be matched to each other and placed in the same light-emitting diode In the present embodiment, the light-emitting diode package module 40 that emits a target peak wavelength is used as an example. When the difference between the first crystal grain 42 and the target peak wavelength is equal to the difference between the second crystal grain 43 and the target peak wavelength, for example, the first peak wavelength is about 535 nm, and the second peak wavelength is 2, about 525 nm. And assuming that the first die 42 and the second die 43 have the same luminous efficiency, the same current is supplied to the first die 42 and the second die 43, regardless of the first die 42 and the second die 43. At the same time, the light or the fast wheel, when the light is illuminated, the human eye perceives the luminous intensity of the target peak wavelength value MOnm, which is the light of the first crystal grain 42 and the second crystal grain 43 at the target peak wavelength 'value 530 nm. The sum of the intensities (as indicated by the wavelength spectrum of the dashed line). That is, after the first die 42 and the second die 43 are packaged together by wavelength matching, the first die 42 and the second die 43 can combine the target peak wavelength λ t to make the person The eye can't tell the difference between the wavelengths of the complex crystal grains, just like taking two wavelengths of the target wave; the grain seal is the same. Referring to FIG. 5 and FIG. 10, in this embodiment, a light-emitting diode package module that emits a target peak 12 1285449 and a wavelength of 53 〇 nm is taken as an example. When the difference between the first crystal grain 42 and the target peak wavelength is half of the difference between the second crystal grain 杓 and the target wave wavelength, for example, the first peak wavelength is “about 535 nm”, and the wavelength of the wave is a 2 Approximately 520 nm, assuming that the luminous efficiencies of the first die 42 and the second die 43 are also the same, the current or voltage value of the first die 42 can be doubled to make the first die 42 The luminous intensity is twice that of the second crystal grain 43. As shown in FIG. 1A, when the first crystal grain 42 and the second crystal grain 43 emit light simultaneously or rapidly, the human eye feels to the target peak wavelength value λ. The intensity of light present at t is the sum of the wavelengths of the first crystal 42 and the second crystal 43 at the target peak wavelength; the intensity of the light at the point (as indicated by the wavelength spectrum of the dashed line). The difference between the first peak wavelength and the second peak wavelength is less than 30 nm, and the combined peak wavelength of the light emission 2 is strong, and a main peak can be formed. After the first day of the sinus, the wavelength of the granule 42 and the granule 43 are summed up, and a single main wave cannot be formed. However, due to the high luminous purity of the light-emitting diode, the human eye still cannot recognize the loss in color saturation. ' Referring to FIG. 4 again, the light-emitting unit 30 may further include a housing 6 〇__ and a fixing plate 70, the LED package module 40 is housed in the casing 6 and disposed on the fixing plate 70. In this embodiment, the lighting unit 3 is packaged in a plurality of LED packages. The module 40 is taken as an example. Of course, the number of the LED package modules 40 can be determined according to the actual product design requirements, and the material of the housing 60 can be metal or plastic. The size and shape of the light-emitting unit 30 can be designed according to the actual size and form 13 1385449. For example, the housing 60 can be a frame, a flat plate or other shapes, and the fixing plate 70 is used to carry the light-emitting diodes. The body package module 4A, the material may be metal or plastic or the fixed plate 70 may be a printed circuit board, and the 'fixing plate 70 may also be a heat sink having a heat dissipation function. The optical film 50 may include a diffusion sheet, a Light guide plate, a diaphragm or a group thereof In this embodiment, the light-emitting unit 30 is exemplified by a direct type. Therefore, the optical film 50 is a diffusion sheet for assisting uniform diffusion of light.
請參考圖11，發光二極體封裝模紕40中，第一晶粒 42與第二晶粒43係相距一第一距離dl，光學薄膜5〇係 具有一可視區V，發光二極體封裝模組4〇與可視區v係 具有最短的-第二距離d2 ’第—距離dl係;;、於第二距離 d2。本實施例中，由於發光單元3〇係為直下式，因此， 可視區V與發光二極體封裝模組4〇之距離係可以光學薄 膜50之-表面與發光二極體封裝模組4〇之距離來管二 第-距離CU小於第二距離d2，係表示第—晶粒4^第二 晶粒43之間距離相當近’可先進行發光二極體封歸： 40内之混光，因此即使是第—晶粒42與第二晶粒4^之主 要波長不大相同，但仍可由發光二極體封裝模組發 目標波長。而複數個發光二極體封裝模組4〇 線經過光學賴50擴散混合後，以形成 出之先 提供給液晶面板用。 之月先源， 之發=。參考圖12及圖13以說明本發明第二實施例 1285449 放寬良品晶粒的波峰波長的範圍，進而能提昇同一晶圓或 同一批次晶圓之晶粒利用率，並降低發光單元之材料及減 少原物料的浪費。 以上所述僅為舉例性，而非為限制性者。任何未脫離 本發明之精神與範疇，而對其進行之等效修改或變更，均 應包含於後附之申請專利範圍中。 【圖式簡單說明】 > 圖1係為習知技術中以發光二極體作為背光模組之一 不意圖， 圖2係為習知技術中背光模組中之發光二極體封裝模 組之一示意圖； 圖3係為沿圖2直線A-A’之發光二極體之封裝模組之 剖面示意圖； 圖4係為本發明之發光單元之一示意圖； > 圖5係為沿圖4中之直線B-B’之發光二極體封裝模組 之剖面示意圖； 圖6係為本發明之發光二極體封裝模組之另一示意 圖； 圖7係為本發明之發光二極體封裝模組之另一示意 圖； 圖8係為本發明之發光二極體封裝模組之另一示意 圖； 圖9係為本發明之發光二極體封裝模組中，第一晶粒 17 1285449 及第二晶粒所發出波長頻譜之一示意圖其中，第 一晶粒與目標波長之差值等於第二晶粒與目標 波長之差值； 圖ίο係為本發明之發光二極體封裝模組中，第一晶 粒及第二晶粒所發出波長頻譜之另一示意圖，其 . 中，第一晶粒與目標波長之差值不等於第二晶粒 與目標波長之差值； 圖11係為本發明之發光單元之另一示意圖，其中發光 ® 單元係為直下式之背光模組； 圖12係為本發明之發光單元之另一示意圖，其中發 光單元係為侧光式之背光模組；以及 圖13係為本發明之發光二極體封裝模組之另一示意 圖，其中發光二極體封裝模組係具有三個發光二 極體晶粒。 I 元件符號說明： 1 背光模組 ' 11 殼體 12 光學薄膜 13 承載板 20 發光二極體封裝模組 21 發光二極體元件 211基板 212散熱座 18 1285449 213晶粒 214導線架 30,30’發光單元 40,40’發光二極體封裝模組Referring to FIG. 11 , in the LED package 40, the first die 42 and the second die 43 are separated by a first distance dl, and the optical film 5 has a visible region V, and the LED package is provided. The module 4 and the visible area v have the shortest - second distance d2 'the first distance d1;;, the second distance d2. In this embodiment, since the light-emitting unit 3 is of a direct type, the distance between the visible area V and the light-emitting diode package module 4 can be the surface of the optical film 50 and the light-emitting diode package module. The distance between the second and the distance CU is smaller than the second distance d2, which means that the distance between the first crystal grain 4 and the second crystal grain 43 is relatively close, and the light-emitting diode can be sealed first: the light mixing within 40 Therefore, even if the primary wavelength of the first die 42 and the second die 4 are not the same, the target wavelength can be emitted by the LED package module. The plurality of LED packages 4 are diffused and mixed by the optical ray 50 to form a liquid crystal panel. The first source of the month, the hair =. Referring to FIG. 12 and FIG. 13 , the second embodiment of the present invention 1285449 is used to relax the peak wavelength range of the good die, thereby improving the grain utilization ratio of the same wafer or the same batch of wafers, and reducing the material of the light emitting unit and Reduce the waste of raw materials. The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the present invention are intended to be included in the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of a light-emitting diode as a backlight module in the prior art, and FIG. 2 is a light-emitting diode package module in a backlight module of the prior art. Figure 3 is a schematic cross-sectional view of a package module of the light-emitting diode along the line A-A' of Figure 2; Figure 4 is a schematic view of the light-emitting unit of the present invention; > Figure 5 is a cross-sectional view 4 is a schematic cross-sectional view of a light-emitting diode package module of a straight line B-B'; FIG. 6 is another schematic view of the light-emitting diode package module of the present invention; FIG. 7 is a light-emitting diode of the present invention. FIG. 8 is another schematic diagram of a light emitting diode package module according to the present invention; FIG. 9 is a first die 17 1285449 of the light emitting diode package module of the present invention; A schematic diagram of one of the wavelength spectra emitted by the second die, wherein the difference between the first die and the target wavelength is equal to the difference between the second die and the target wavelength; wherein the figure is in the LED package module of the present invention Another schematic diagram of the wavelength spectrum emitted by the first die and the second die, The difference between the first die and the target wavelength is not equal to the difference between the second die and the target wavelength; FIG. 11 is another schematic view of the light emitting unit of the present invention, wherein the light emitting unit is a direct type backlight FIG. 12 is another schematic view of the light emitting unit of the present invention, wherein the light emitting unit is an edge light type backlight module; and FIG. 13 is another schematic view of the light emitting diode package module of the present invention. The light emitting diode package module has three light emitting diode crystal grains. I Component Symbol Description: 1 Backlight Module' 11 Housing 12 Optical Film 13 Carrier Plate 20 LED Package Module 21 LED Body 211 Substrate 212 Heatsink 18 1285449 213 Die 214 Lead Frame 30, 30' Light-emitting unit 40, 40' light-emitting diode package module
41，41’承載體 42 第一晶粒 43 第二晶粒 44 内導線 45 封膠材料 46 引線 47 第二晶粒 50,50’光學薄膜 60 殼體 70 固定板 dl 第一距離 d2 第二距離 d3 第三距離 D 晶粒 V 可視區 At 目標波峰波長 λΐ 第一波峰波長 λ 2 第二波峰波長 λ 3 第三波峰波長 Α-Α’直線 19 1285449 B-B’直線41, 41' carrier 42 first die 43 second die 44 inner wire 45 encapsulant 46 lead 47 second die 50, 50' optical film 60 housing 70 fixed plate dl first distance d2 second distance D3 third distance D grain V visible area At target peak wavelength λ ΐ first peak wavelength λ 2 second peak wavelength λ 3 third peak wavelength Α-Α 'line 19 1285449 B-B' straight line