201037251 四、指定代表囷·· (一） 本案指定代表圖為：第（4 )圖。 (二） 本代表圖之元件符號簡單說明： 1 0 :反應室蓋部 η :平板部 1 2 :側壁部 . 20 :反應室本體 21:反應室本體的基部 22:平板部 〇 22b :貫通口 2 3 :頂出銷 2 4 :排氣口 25:環狀吸引口 2 5 a :開口部 2 6 :連通口 ❹五、本案若有化學式時，請揭示最能顯示發明特 徵的化學式： 六、發明說明： 【發明所屬之技術領域】 本發明是關於藉由使塗佈於基板（sub st rate)的塗佈液 減歷乾燥’在基板上形成塗佈膜之減壓乾燥穿 、置〇 f先前技術】 2 201037251 在液晶顯示器（liquid crystal dispUy)或電漿顯示 器（plasma display)等的平面面板顯示器（flat panel display)使用有在基板上塗佈有光阻（resist)液者（稱為 塗佈基板）。該塗佈基板是透過藉由塗佈裝置（c〇ating machine)在基板上均勻地塗佈有光阻液形成有塗佈膜，然 .後透過藉由減壓乾燥裝置使塗佈膜乾燥而被生產。 該減壓乾燥裝置例如如下述專利文獻1所示，於在藉 由上部室（upper Chamber)與下部室（Iower chamber)形成 〇的收容部收容基板的狀態下，藉由自排氣口（exhaustp〇rt) 排出收容部的大氣使收容部減壓並使基板上的塗佈膜乾 燥。 此時’藉由承載基板的平板（plate)當作整流板發揮功 能，可抑制基板上的塗佈膜形成有乾燥不均。亦即，若使 真空栗（vacinim pUrap)等動作並使吸引力作用於排氣口，則 基板附近的大氣通過整流板的外周緣側並流入排氣口。然 ^後，排氣口沿著承载有基板的區域的外周緣内側附近排列配 «又有複數個’俾能以短時間有效地回收通過整流板的外周緣 】的大氣。據此’基板附近的大氣大致均等地被排氣，可防 止塗佈膜形成有乾燥不均。 [專利文獻1]日本國特開2005_329303號公報 【發明内容】 但是，即使是記載於上述專利文獻丨的減壓乾燥裝置 有抑制不完乾燥不均的情形。亦即，因排氣口沿著承载 3 201037251 有基板的區域的外周緣内側附近配設，故在配 的附近與其他的場所比較吸引力變強。因此， 整流板的情形，也會在排氣口的附近產生強 動，在基板上的塗佈膜產生沿著大氣的流動的 -均。而且，由於原封不動地被乾燥而有塗佈臈 均的問題。 本發明乃是鑑於上述問題點所進行的創作 提供一種減壓乾燥裝置，可抑制塗佈膜形成有 〇 為了解決上述課題，本發明的減壓乾燥裝 包含：收容基板之收容部；在前述收容部的規定 則述基板之基板保持部；配設於與被保持於前 部的基板的中心位置對向的位置，#出前述收 之排氣口；具有沿著被保持於前述基板保持部 周緣開口的開口部，沿著前述基板的外周緣連 之環狀吸引口，其中透過前述排氣口與前述環 通連接，若在前述排氣口產生吸引力，則前述 氣透過前述環狀吸引口被由排氣口排出。 依照上述減壓乾燥裴置，若在排氣口產生 收容部的大氣一樣地透過環狀吸引口的開口部 即’因％狀吸引口與排氣口連通，排氣口被配 的中心位置對向的位置，故若吸引力作用於排 及環狀吸引口全周朝位於基板的中心位置的排 力作用’遍及環狀吸引口内全周大致一樣地產 而且，因該環狀吸引口沿著基板的外周緣具有 置有排氣口 即使是配設 的大氣的流 條紋狀的不 產生乾燥不 ’其目的為 乾燥不均。 置’其特徵 的位置保持 述基板保持 容部的大氣 的基板的外 通形成環狀 狀吸引口連 收容部的大 吸引力，則 被吸引。亦 置於與基板 氣口，則遍 氣口的吸引 生吸引力。 開口部，故 4 201037251 可在該開口部全體 部的大氣由基板的 地被吸引，透過環 容部的大氣一樣地 外周緣内側附近設 近與其他的場所產 燥不均。 使大致均勻的吸引力 中央部分朝位於外周 狀吸弓丨口被由排氣口 被吸引，故與如以往 有複數個排氣口，在 生吸引力的強弱的情 產生。據此，收容 緣側的開口部一樣 排出。因此，因收 般由於沿著基板的 配置有排氣口的附 形比較’可抑制乾 而且也能以如下的構成：前述環狀吸引口形成於前述 〇基板保㈣，遍及被保持於前述基板保持部的基板的外周 緣全周，形成於距該外周緣等距離的位置。 依照該構成’因環狀吸引口形成於距被保持的基板的 外周緣等距離位置的基板保持部，故由基板的中央部分朝 位於外周緣側的環狀吸引口一樣地產生均句的吸引力。因 此，由於無須配設習知的整流板，故可減小收容部的容積。 據此，可抑制伴隨收容部的增大在塗佈膜内產生的氣泡， 可抑制乾燥不均的產生。 ^ 而且也能以如下的構成：前述開口部為連通於前述收 :部與前述環狀吸引口的貫通口，該貫通口沿著被保持於 月’J述基板保持部的基板的外周緣形成。 依照該構成’即使是產生於環狀吸引口的吸引力在圓 周方又： + 一樣的情形，也能藉由適宜調節貫通口的配置 等 丄 ’ x致均勻地吸引收容部的大氣。 具體的樣態能以如下的構成：具有連通連接前述排氣 口與則述環狀吸引口的連通口，連接有該連通口的環狀吸 5 201037251 引口部分中的貫通口比其他的部分中的貫通口小而形成。 依照該構成’在連接有連通口的排氣口部分中，來自 排氣口的吸引力比其他的部分大。因此，藉由使該部分中 的貫通口比其他的部分小而形成，可使該部分的吸引力比 _其他的部分小，可使開口部全體的吸引力大致均勻。 更具體為也可以製作成前述貫通σ隨著離開前述連通 口與前述環狀吸引口連通連接的部分逐㈣變大而形成之 構成，適宜地調節，俾開口部全體的吸引力成均勻。 Ο 【發明的功效】 依照本發明的減壓乾烨验番 β t x £乾琛裒置，可抑制塗佈膜形成有乾 燥不均。 實施方式】 使用圖面說明與本發明有關的實施的形態。 圖5是概略地顯示本發明M At L ,,, +赞明的一實施形態中的減壓 圖 〇 〇 网不不發明的一實施形態中的減壓 乾燥裝置之圖’圖1是顯示減壓乾燥裝置的反應室(ch_e。 蓋部10與反應室本體20分離的狀態之斜視圖，圖2是反 應室本體之頂視圖’圖3是顯示反應室本體的基部21之 圖’圖4是顯示在反應室本體2〇承载有基板2的狀態之部 :剖面圖’圖5 W示在減壓乾燥裝置内收容有基 態之圖。 的 如圖1〜圖5所示，減 光阻液等的塗佈膜乾燥， 壓乾燥裝置是使形成於基板1上 具備反應室本體20 (基板保持部 6 201037251 20)與反應室蓋部1〇。藉由該反應室本體2〇與後述的反應 室蓋部10,如圖5所示形成有收容基板j的基板收容部 30。然後，可藉由維持該基板收容部3〇於減壓環境，使收 容於基板收容部30的基板丨乾燥。 此外，在以下的說明令是以圖1中的紙面上側當作減 壓乾燥裝置的上方，以圖1中的紙面下側當作減壓乾燥裝 置的下方進行說明。 反應室本體20是保持形成有塗佈膜的基板丨。該反應 〇室本體20具有基部21與安裝於該基部21的頂面的平板部 (Plate part)22。在該平板部22形成有複數個銷孔（pin hole)22a，頂出銷（lift pin)23由該銷孔22a突出。然後， 基板1藉由該突出的複數根頂出銷23的尖端部分保持。 具體上在基部2 1於對應銷孔2 2 a的位置形成有銷收容 孔21a，在該銷收容孔21a埋設有頂出銷23。該頂出銷23 與配設於基部21的下側的驅動裝置（未圖示）連接，藉由驅 動該驅動裝置使頂出銷23進行升降動作，並且可在任旁的 〇位置停止。在本實施形態中被設定，俾頂出銷23可停止於 - 被收容於基部21内的收容位置，與由平板部22突出進行 基板1的遞送的基板遞送位置，與進行乾燥製程的乾燥位 置。然後，在頂出銷2 3位於基板遞送位置的狀態下基板1 一被承載於頂出銷23的尖端部分，就藉由未圖示的定位機 構’基板1被定位於預先設定的位置後，使頂出銷下降，基 板1在位於乾燥位置的狀態下被保持。此外，在該銷收容孔 21a配設有氣封（seal) ’即使是頂出銷23突出的狀態也能 7 201037251 防止基板收容部3 0的大氣自銷收容孔21 a洩漏。 而且，反應室本體20具有排氣口 24，透過自該排氣 口 2 4排出基板收容部3 0的大氣，使基板收容部3 0被減壓。 在該排氣口 24透過配管與未圖示的真空泵連接，藉由使真 -空泵動作，使吸引力作用於排氣口 24，使基板收容部30 的大氣被吸引。據此’基板收容部30被減壓至比大氣壓小 的壓力。本實施形態中的排氣口 2 4僅配設一個於基部21 的中央部分，且對向於藉由頂出銷2 3保持於乾燥位置的基 〇板1的中心位置的位置。因此，基板收容部3〇的大氣產生 朝對向於基板1的中心位置的位置的氣流，透過排氣口 Μ 被排出。此外，在本實施形態中雖然由一個孔構成的排氣口 24僅配設一個於對向於基板i的中心位置的位置，但是也 可以為由複數個孔構成的排氣口 24。即使是此情形，若由 複數個孔構成的排氣口 24的排氣區域的中心位置設於與被 保持的基板1的中心位置對向的位置，則可遍及環狀吸引口 25的全周使均勻的吸引力產生。 而且，在反應室本體20具有：環狀吸引口 25 ;與該環 狀吸引口 25與排氣口 24連通連接的連通口 26。具體上環 狀吸引口 25與連通口 26是藉由形成於基部21的溝與覆蓋 該等溝的平板部22形成（參照圖4、冑5)。而且，在環狀吸 2 口 25形成有開σ於基板收容部30的開口部25a。因此， 右使吸引力產生於排氣口 24，則基板收容部30的大氣由開 邓25a透過環狀吸引口 25及連通口 26被由排氣口 24排 $ 201037251 環狀吸引口 25沿著被頂出銷23保持白 形成。具體上環狀吸引口 25具有略四角形 圖5 )，沿著被保持的基板1的外周緣形成 四角形的剖面形狀的環狀吸引口 25沿著被 -外周緣連續地包圍被保持的基板1而形成， 口 25遍及被保持的基板1的外周緣全周等 本實施形態中如圖3所示’形成於距被保持 α的位置。因此，若在排氣口 24產生吸弓丨 〇吸引口 25的全周吸引力一樣地產生，吸引 大致一樣地作用。此外，圖2、圖3中的兩 顯示被保持的基板1的位置。 而且，環狀吸引口 25藉由開口部25a 部30。在本實施形態中在平板部22形成 22b’透過該貫通口 22b連通有環狀吸引口 30。亦即，藉由該貫通口 22b形成有開口 | 該貫通口 22b是沿著被頂出銷23保持 ©緣連續地形成，包圍被保持的基板1而形i 22b是遍及被保持的基板i的外周緣全周 成。據此，若在排氣口 24產生吸引力，貝1J 25的全周產生的吸引力遍及貫通口 22b全 生’並且可使由基板1的中央部分朝貫通口 流動的氣流一樣地產生。 而且，形成於環狀吸引口 25與連通口 貫通口 22b比形成於離開該交叉的部分的>1: 9基板1的外周緣 的剖面形狀（參照 環狀。亦即，略 保持的基板1的 3而且，環狀吸引 .距離地形成，在 的基板1的距離 力’則遍及環狀 力對基板1全體 點鏈線是假想地 連通於基板收容 有複數個貫通口 25與基板收容部 中 25a ° 的基板1的外周 I。而且，貫通口 等距離点地形 遍及環狀吸引口 ‘體大致均勻地產 22b(開口部 25a) 26交叉的部分的 包置的貫通口 22b 201037251 小而形成。在本實施形態中隨著離開交又的部分，依次變 而形成。據此，藉由在環狀吸引口 25產生的吸引力透過 通口 22b均勻地被吸引。亦即，在排氣口 24產生的吸引 透過連通口 26在環狀吸引口 25全體產生，惟在環狀„及引力 • 25中於接近連通口 26的部分，亦即，在環狀吸引口 Z b與 連通口 26的交叉部分中吸引力梢強地產生。因 ' ' 此，透過藉 由在該環狀吸引口 25與連通口 26的交又部分中，丨、,9 Y小小地形成 貫通口 22b並減少大氣的吸引量，且在該交又部公 I刀μ外形成 ¢)更大的貫通口 22b，使大氣的吸引量更多，可藉由女, TO八>j、不同 的貫通口 22b的形成使在環狀吸引口 25產生的吸引力均勺 化。因此’基板收容部30的大氣遍及開口部25a全體均勺 地產生吸引力，可在基板收容部30使由基板1的中央部八 朝貫通口 22b(開口部25a)流動的氣流一樣地產生。藉由該 一樣的氣流的產生，可抑制形成於基板1的塗佈膜的乾燥不 均。 而且’在反應室本體20設有未圖示的氣體供給口，拉 ©由自該氣體供給口供給N2氣體，可使基板收容部30内的 •減壓狀態返回到大氣壓。 而且’如圖4、圖5所示，反應室蓋部10是可進行升 降動作地形成，可對反應室本體 20接離（attach and detach)。而且，透過該反應室蓋部1〇接近並抵接反應室 本體20,藉由反應室蓋部1〇與反應室本體20形成有收容 基板的基板收容部30。 該反應室蓋部1 0具有覆蓋被保持於反應室本體2 0的 201037251 基板1的形狀，具有：與反應室 板部m由該平板部u的 二對面的平板狀的平 侧，具有包圍被保持的基板^ 犬出於反應室本體20 的基板1的形狀之側壁部12。 平板部11的基板收容部 側是形成平渴》# 丨曰# •基板收容部30的氣流（大氣的流動）不一 ， 且，在基板收容部30側的背面卜動）不被妨礙而形成。而 - 牙面侧安裝有肋（rihU去m 、 可防止在基板收容部30被減 不， 此，即使是基板收容部3"皮減壓的::；了 〇收容部30側也能維持平坦度 ^千板4 11的基板 度了抑制基板收容部30的氣流 的擾動（turbulence)，抑制乾燥不均的產生。 而且，側壁部12的基板收容部30側與平板部u 一樣 形成平滑的平坦狀，基板收容部3〇的大氣的流動不被妨礙 而形成。而且，在側壁部”於&^：·^ 里〇丨U於與反應室本體20的基部21 抵接的面配設有密封構件。該密封構件被形成環狀，俾包 圍被保持的基板卜據此，若使反應室蓋部1。下降，則密 封構件抵接反應至本體2 〇的基部2 J，基板收容部3 〇被密 U封。 其次針對減壓乾燥裝置的動作說明。 首先’基板1的供給被進行。具體上為在使反應室蓋部 10上升的狀態下’藉由未圖示的機械手（r〇b〇t hand)等使 塗佈有塗佈液的基板1被承載於在基板遞送位置停止的頂 出銷2 3的尖端部分。然後，透過在基板1的定位動作被進 行後’使驅動裝置動作並驅動頂出銷23，使基板1位於乾 燥位置。 201037251 其次，使基板1乾燥。亦即，透過在使反應室蓋部i 0 下降並密閉基板收容部3 0後，使真空泵動作並使基板收容 部30内減壓’使基板1上的塗佈液乾燥。具體上若使真空 泵動作並在排氣口 2 4產生吸引力，則該吸引力透過連通口 .26產生於環狀吸引口 25。亦即’產生於沿著被保持的基板 1的外周緣形成的環狀吸引口 2 5全周。此時，在環狀吸引 口 25中在與連通口 26交叉的部分中吸引力比與連通口 26 交叉的部分以外的部分稍大’惟環狀吸引口 25全周吸引力 ❹大致一樣地產生。而且，該吸引力透過貫通口 22b(開口部 25a)作用於基板收容部3〇，惟因貫通口 22b隨著離開環狀 吸引口 25與連通口 26交叉的部分變大而形成，故遍及開 口 4 25a全體產生大致均勻的吸引力。因此，在被保持的 基板1由中央部分朝位於外周緣侧的環狀吸引口 2 5產生一 樣的氣流。 其次’在透過維持基板收容部3 〇於規定時間減壓乾燥 狀態使塗佈液乾燥後，進行塗佈基板丨的取出。具體上為透 〇過自氣體供給口將N2氣體供給至基板收容部3〇，使基板收 .容部30内返回到大氣壓。然後，透過使反應室蓋部丨〇上 .升並進行塗佈基板1的取出，完成一連串的減壓乾燥 的動作。 、 依照如以上說明的減壓护陆 m ^ 至乾燥裝置，因排氣口 24僅被配 置於與基板1的中心位置對向的位置，故若吸引力作用於 排氣口 24’則在環狀吸弓丨口 25遍及環狀吸引口託内全周 產生大致均句的吸引力。而且，因該環狀吸引口 U沿著基 201037251 板1的外周緣具有貫通口 22b(開口部25a)，故可使大致均 勻的吸引力產生於開口部25a全體。據此，基板收容部 的大氣由基板1的中央部分朝位於外周緣侧的開口部25a 一樣地被吸引，透過環狀吸引口 25被由排氣口 24排出。 因此因基板收容部3 0的大氣一樣地被吸引，故與如以往 般由於沿著基板的外周緣内側附近設有複數個排氣口，在 配置有排氣口的附近與其他的場所產生吸引力的強弱的情 形比較，可抑制乾燥不均。而且，在上述減壓乾燥裝置中 ❹因環狀吸弓In 25形成於反應室本體2〇(基板保持部），藉 由該環狀吸引口 25的開口部25a產生均勻的吸引力，故^ 須如以往般配設整流板。據此，因可減小基板收容部Μ 的容積，故可抑制伴隨基板收容部30的增大在塗佈臈内產 生的氣泡’並且可使裝置全體省空間化。 而且，在上述實施形態中雖然是針對當作開口部 的貫通口 22b隨著離開環狀吸引口 25與連通口 26交又3 部分而變大的例子說明，惟隨著離開該交叉的部分階段2 〇變大者也可以。亦即，形成形成複數個規定的大小的=、 口 22b的一群的貫通口 22b，該一群的貫通口 22b的大通 隨著離開該交又的部分，每一群大大地形 〜战者也可以。亦 即，若為藉由貫通口 22b的大小調節環狀吸引 力口 Z 5中的吸 引力的強弱’使開口部25a全體產生均勻的成？丨丄 Ί的吸引力之構成 也可以。此外，若環狀吸引口 25中的吸引七Α ^ J丨刀馮一定，則為 全部均等的大小的貫通口 2 2 b也可以。 而且，在上述實施形態中雖然是針對間π加〇 c 耵開口部25a為形 13 201037251 成於平板部22的貫通口 22b的例子說明，惟不以平板部u 覆蓋環狀吸引口 2 5的開口部分，以環狀吸引口 2 5沾 即開 部分當作開口部25a者也可以。即使是該構成也因形成产 狀’俾環狀吸引〇 25包圍基板1，故基板收容部30沾丄 的大氣 由基板1的中央部分朝開口部25a —樣地被吸引。 而且’在上述實施形態中雖然是針對連通口 2 6由中央 位置的排氣口 24延伸於4方向的例子說明，惟無需限定於 4方向。亦即，因環狀吸引口 2 5連通形成環狀，故不限定 0於連通口 26的數目，可使一樣的吸引力作用於環狀吸引口 25全周。此外，假設由於設有連通口 26的數目而在環狀 吸引口 25產生吸引力的稍微的強弱的情形，也可藉 ^員通 口 22b的配設方法使由開口部25a產生的吸引力大致均勹 【圖式簡單說明】 圖1是顯示本發明的一實施形態中的減壓乾燥裝置的 反應室蓋部與反應室本體分離的狀態之斜視圖。 〇 圖2是上述減壓乾燥裝置的反應室本體之頂視圖。 圖3是顯示上述反應室本體的基部之頂視圖。 圖4是顯示在上述反應室本體承載有基板的狀態之部 分剖面圖。 圖5是顯示在減壓乾燥裝置内收容有基板的狀態之圖。 【主要元件符號說明】 1:基板 14 201037251 I 〇:反應 II :平板 1 2 :側壁201037251 IV. Designated representative 囷·· (1) The representative representative of the case is: (4). (2) The symbol of the symbol of the representative figure is briefly described: 1 0 : reaction chamber cover η: flat portion 1 2 : side wall portion 20 : reaction chamber body 21 : base portion of reaction chamber body 22 : flat portion 〇 22b : through port 2 3 : ejection pin 2 4 : exhaust port 25: annular suction port 2 5 a : opening portion 2 6 : communication port ❹ 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: [Technical Field] The present invention relates to a vacuum drying method for forming a coating film on a substrate by drying the coating liquid applied to a substrate (substrate). Prior Art 2 201037251 In a flat panel display such as a liquid crystal dispUy or a plasma display, a photoresist is applied on a substrate (referred to as a coating). Cloth substrate). The coated substrate is formed by transmitting a photoresist film uniformly on the substrate by a coating device, and then drying the coating film by a vacuum drying device. Being produced. In the vacuum drying apparatus, for example, as shown in the following Patent Document 1, the substrate is housed in a housing portion in which the upper chamber and the lower chamber (Iower chamber) are formed, and the self-venting port (exhaustp) 〇rt) The atmosphere of the accommodating portion is discharged to decompress the accommodating portion and to dry the coating film on the substrate. At this time, the plate carrying the substrate functions as a rectifying plate, and drying unevenness in the formation of the coating film on the substrate can be suppressed. In other words, when a vacuum pump or the like is applied and the suction force acts on the exhaust port, the atmosphere in the vicinity of the substrate passes through the outer peripheral side of the flow regulating plate and flows into the exhaust port. Then, the exhaust port is arranged in the vicinity of the inner side of the outer periphery of the region where the substrate is carried, and a plurality of 俾 can be efficiently recovered in a short time to the atmosphere passing through the outer periphery of the rectifying plate. According to this, the atmosphere in the vicinity of the substrate is exhausted substantially uniformly, and drying unevenness in the coating film can be prevented. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2005-329303. SUMMARY OF THE INVENTION However, even in the vacuum drying apparatus described in the above-mentioned patent document, there is a case where the drying unevenness is not suppressed. In other words, since the exhaust port is disposed near the inner side of the outer periphery of the region where the substrate is supported by the load 3 201037251, the attraction is stronger in the vicinity of the distribution than in other places. Therefore, in the case of the rectifying plate, strong force is generated in the vicinity of the exhaust port, and the coating film on the substrate generates a flow along the atmosphere. Moreover, there is a problem that the coating is uniform because it is dried as it is. The present invention has been made in view of the above problems, and provides a vacuum drying apparatus capable of suppressing formation of a coating film. In order to solve the above problems, the reduced-pressure drying package of the present invention includes: a housing portion for housing a substrate; The specification of the part is a substrate holding portion of the substrate; the position is opposed to the center position of the substrate held by the front portion, and the exhaust port is closed; and the periphery of the substrate holding portion is held along the periphery of the substrate holding portion. An opening of the opening, an annular suction port connected to the outer periphery of the substrate, wherein the opening is connected to the loop through the exhaust port, and when the exhaust port generates an attractive force, the gas passes through the annular suction port It is discharged by the exhaust port. According to the above-described decompression drying device, the opening portion of the annular suction port, that is, the opening of the annular suction port, which is the atmosphere of the accommodating portion, is connected to the exhaust port, and the center position of the exhaust port is matched. In the position of the direction, if the attraction force acts on the row and the annular suction port, the displacement force acting on the center of the substrate is substantially the same throughout the entire circumference of the annular suction port, and the annular suction port is along the substrate. The outer peripheral edge has a flow-striped shape in which the exhaust port is provided, even if it is disposed, and does not cause drying. The position at which the feature is placed is such that the outer surface of the substrate holding the atmosphere of the substrate holding portion forms a large attraction force of the annular suction port connecting portion, and is attracted. Also placed on the substrate port, the attraction of the air port is attractive. In the case of the opening portion, the atmosphere of the entire opening portion is attracted to the ground of the substrate, and the vicinity of the inner side of the outer peripheral edge of the atmosphere of the annular portion is unevenly distributed with other places. The central portion is attracted to the outer peripheral suction port and is sucked by the exhaust port. Therefore, there are a plurality of exhaust ports as in the past, and the strength of the attraction is generated. According to this, the opening on the side of the housing edge is discharged as it is. Therefore, the attachment type of the exhaust port along the substrate can be suppressed, and the annular suction port can be formed on the substrate (4), and the substrate can be held over the substrate. The outer periphery of the substrate of the holding portion is formed at a position equidistant from the outer periphery. According to this configuration, the substrate holding portion is formed at a position equidistant from the outer periphery of the substrate to be held by the annular suction port. Therefore, the central portion of the substrate is attracted to the annular suction port located on the outer peripheral side. force. Therefore, since it is not necessary to provide a conventional rectifying plate, the volume of the accommodating portion can be reduced. According to this, it is possible to suppress the generation of bubbles generated in the coating film accompanying the increase in the accommodating portion, and it is possible to suppress the occurrence of unevenness in drying. Further, the opening may be a through port that communicates with the receiving portion and the annular suction port, and the through hole is formed along the outer periphery of the substrate held by the substrate holding portion. . According to this configuration, even if the attraction force generated in the annular suction port is the same as the circumference: +, the atmosphere of the accommodating portion can be uniformly sucked by appropriately adjusting the arrangement of the through holes. The specific aspect can be configured such that the communication port that connects the exhaust port and the annular suction port is connected, and the annular suction port 5 201037251 to which the communication port is connected is more than the other portion in the mouth portion. The through hole in the middle is small. According to this configuration, in the exhaust port portion to which the communication port is connected, the suction force from the exhaust port is larger than the other portions. Therefore, by forming the through hole in the portion smaller than the other portions, the attraction force of the portion can be made smaller than that of the other portions, and the attraction force of the entire opening portion can be made substantially uniform. More specifically, it is also possible to form a configuration in which the portion through which the through-hole σ is connected to the annular suction port and which is connected to the annular suction port is increased by (four), and is appropriately adjusted, and the suction force of the entire opening portion is uniform. Ο [Effects of the Invention] According to the decompressive dryness test of the present invention, the β t x £ dry sputum can suppress the formation unevenness of the coating film. Embodiments The embodiments of the present invention will be described with reference to the drawings. Fig. 5 is a view schematically showing a vacuum drying apparatus according to an embodiment of the present invention, in which the pressure reduction diagram of the embodiment of the present invention is not shown; The reaction chamber of the pressure drying device (ch_e. The state in which the lid portion 10 is separated from the reaction chamber body 20, FIG. 2 is a top view of the reaction chamber body. FIG. 3 is a view showing the base portion 21 of the reaction chamber body. FIG. 4 is A portion showing a state in which the substrate 2 is carried by the reaction chamber main body 2: a cross-sectional view FIG. 5 shows a diagram in which a ground state is accommodated in the vacuum drying apparatus. As shown in FIGS. 1 to 5, a light-reducing liquid, etc. The coating film is dried, and the pressure drying apparatus is provided with a reaction chamber main body 20 (substrate holding portion 6 201037251 20) and a reaction chamber lid portion 1 formed on the substrate 1. The reaction chamber main body 2 and a reaction chamber to be described later are provided. As shown in Fig. 5, the lid portion 10 is formed with a substrate accommodating portion 30 for accommodating the substrate j. Then, the substrate accommodating portion 3 is dried in a reduced pressure environment to dry the substrate accommodating the substrate accommodating portion 30. In the following description, the paper side of Figure 1 is used as a vacuum drying device. The lower side of the paper surface in Fig. 1 is described as the lower side of the vacuum drying apparatus. The reaction chamber main body 20 is a substrate 保持 on which a coating film is formed. The reaction chamber body 20 has a base portion 21 and is attached to the base portion. A plate portion 22 of a top surface of the cover plate 22. A plurality of pin holes 22a are formed in the flat plate portion 22, and a lift pin 23 is protruded from the pin hole 22a. Then, the substrate 1 is borrowed. The tip end portion of the plurality of protruding ejector pins 23 is held. Specifically, a pin receiving hole 21a is formed at a position of the base portion 2 1 at the corresponding pin hole 2 2 a, and an ejector pin 23 is embedded in the pin receiving hole 21a. The ejector pin 23 is connected to a driving device (not shown) disposed on the lower side of the base portion 21, and the ejector pin 23 is moved up and down by driving the driving device, and can be stopped at any of the squatting positions. In the embodiment, the dome output pin 23 can be stopped at the storage position accommodated in the base portion 21, the substrate delivery position where the substrate 1 is protruded by the flat plate portion 22, and the dry position at which the drying process is performed. At the ejector pin 2 3 at the substrate delivery position In the state in which the substrate 1 is carried on the tip end portion of the ejector pin 23, the substrate 1 is positioned at a predetermined position by a positioning mechanism 'not shown, and the ejector pin is lowered, and the substrate 1 is in the dry position. In addition, a gas seal is provided in the pin receiving hole 21a. Even in a state in which the ejector pin 23 is protruded, it is possible to prevent the substrate accommodating portion 30 from the pin receiving hole 21a. Further, the reaction chamber main body 20 has an exhaust port 24, and the atmosphere of the substrate housing portion 30 is discharged from the exhaust port 24, and the substrate housing portion 30 is depressurized. The exhaust port 24 is connected to a vacuum pump (not shown) through a pipe, and the suction force is applied to the exhaust port 24 to cause the atmosphere of the substrate housing portion 30 to be sucked. Accordingly, the substrate housing portion 30 is depressurized to a pressure smaller than atmospheric pressure. The exhaust port 24 in the present embodiment is disposed only at a central portion of the base portion 21, and is opposed to a position at the center of the base plate 1 held by the ejector pin 23 at the dry position. Therefore, the atmosphere of the substrate accommodating portion 3 is generated to flow toward the center position of the substrate 1, and is discharged through the exhaust port. Further, in the present embodiment, the exhaust port 24 formed of one hole is disposed only at a position facing the center position of the substrate i, but may be an exhaust port 24 composed of a plurality of holes. Even in this case, if the center position of the exhaust region of the exhaust port 24 composed of a plurality of holes is provided at a position facing the center position of the substrate 1 to be held, the entire circumference of the annular suction port 25 can be extended. Make a uniform attraction. Further, the reaction chamber main body 20 has an annular suction port 25 and a communication port 26 that communicates with the annular suction port 25 and the exhaust port 24. Specifically, the annular suction port 25 and the communication port 26 are formed by a groove formed in the base portion 21 and a flat plate portion 22 covering the grooves (see Figs. 4 and 5). Further, an opening portion 25a in which the opening σ is formed in the substrate housing portion 30 is formed in the annular suction port 25. Therefore, when the suction force is generated on the right side of the exhaust port 24, the atmosphere of the substrate accommodating portion 30 is discharged from the exhaust port 25 through the annular suction port 25 and the communication port 26 through the annular suction port 24 by $201037251. The ejector pin 23 is kept white. Specifically, the annular suction port 25 has a substantially square shape (Fig. 5), and an annular suction port 25 having a quadrangular cross-sectional shape along the outer periphery of the substrate 1 to be held continuously surrounds the substrate 1 to be held along the outer periphery. The opening 25 is formed over the entire circumference of the outer periphery of the substrate 1 to be held, etc., in the present embodiment, as shown in Fig. 3, and is formed at a position away from the held α. Therefore, if the suction force is generated in the exhaust port 24 in the same manner as the full-circumference attraction of the suction port 25, the suction acts substantially the same. Further, the two of Figs. 2 and 3 show the position of the substrate 1 held. Further, the annular suction port 25 is formed by the opening portion 25a portion 30. In the present embodiment, the flat plate portion 22 is formed, and the annular suction port 30 is communicated through the through hole 22b. In other words, the opening 22b is formed with an opening formed along the ejector pin 23 to surround the held substrate 1 and the shape i 22b is over the substrate i to be held. The outer circumference is completed all week. As a result, when the suction force is generated in the exhaust port 24, the suction force generated throughout the circumference of the bead 1J 25 is generated throughout the through hole 22b and can be generated in the same manner as the airflow flowing from the central portion of the substrate 1 toward the through hole. Further, the annular suction port 25 and the communication port through-hole 22b are formed in a cross-sectional shape of the outer periphery of the substrate 1 which is formed at a portion away from the intersection (refer to the ring shape, that is, the substrate 1 which is slightly held) In addition, the annular attraction is formed in a distance, and the distance force of the substrate 1 is omni-directionally connected to the substrate by a ring-shaped force, and the plurality of through-holes 25 and the substrate housing portion are imaginarily connected to the substrate. The outer periphery I of the substrate 1 of 25 a ° is formed. The through-holes are formed at a distance from the point where the annular suction port 'the body is substantially uniform, and the portion 22b (the opening portion 25a) 26 intersects. In the present embodiment, the portion that is separated from the intersection is sequentially formed. Accordingly, the suction force generated in the annular suction port 25 is uniformly attracted through the opening 22b. That is, it is generated at the exhaust port 24. The suction is generated through the communication port 26 in the entire annular suction port 25, but in the ring portion „ and the attraction force 25 in the portion close to the communication port 26, that is, at the intersection of the annular suction port Z b and the communication port 26 Attractive Because of this, the through hole 22b is formed in a small portion by the intersection of the annular suction port 25 and the communication port 26, and the amount of attraction of the atmosphere is reduced, and The intersection is formed by a larger through hole 22b, and the amount of suction of the atmosphere is increased. The formation of the ring can be attracted by the formation of the female, TO8>j, and the different through-holes 22b. Therefore, the attraction force generated by the port 25 is scooped. Therefore, the atmosphere of the substrate accommodating portion 30 is uniformly generated throughout the opening portion 25a, and the central portion of the substrate 1 can be made to pass through the opening 22b (opening) in the substrate accommodating portion 30. The flow of the flow of the portion 25a) is generated in the same manner. By the generation of the same gas flow, drying unevenness of the coating film formed on the substrate 1 can be suppressed. Further, a gas supply port (not shown) is provided in the reaction chamber main body 20. When the N2 gas is supplied from the gas supply port, the pressure-reduced state in the substrate housing portion 30 can be returned to the atmospheric pressure. Further, as shown in Figs. 4 and 5, the reaction chamber cover portion 10 can be lifted and lowered. Formed in the ground, the reaction chamber body 20 can be attached and detached. Further, the reaction chamber cover portion 1 is brought close to and abuts against the reaction chamber main body 20, and the reaction chamber cover portion 1A and the reaction chamber main body 20 are formed with a substrate housing portion 30 for accommodating the substrate. The reaction chamber cover portion 10 has Covering the shape of the 201037251 substrate 1 held in the reaction chamber main body 20, and having a plate-like flat side opposite to the reaction chamber plate portion m from the flat plate portion u, having a substrate surrounded by the held dog The side wall portion 12 of the shape of the substrate 1 of the chamber main body 20. The substrate accommodating portion side of the flat plate portion 11 is formed by the airflow (the flow of the atmosphere) of the substrate accommodating portion 30, and is accommodated in the substrate. The back side of the portion 30 side is formed without being hindered. On the other hand, ribs are attached to the tooth surface (the rihU is removed to m, and the substrate accommodating portion 30 can be prevented from being removed. Therefore, even if the substrate accommodating portion 3" is decompressed: the accommodating portion 30 side can be maintained flat. The degree of the substrate of the slab 4 11 suppresses the turbulence of the airflow in the substrate accommodating portion 30, and suppresses the occurrence of unevenness in drying. Further, the substrate accommodating portion 30 side of the side wall portion 12 forms a smooth flat like the flat plate portion u. In the shape of the substrate, the flow of the atmosphere in the substrate accommodating portion 3 is not hindered. Further, the side wall portion is disposed on the surface that is in contact with the base portion 21 of the reaction chamber body 20 in the & The sealing member is formed in a ring shape, and the substrate surrounds the held substrate. When the reaction chamber cover portion 1 is lowered, the sealing member abuts against the base portion 2 J of the main body 2, and the substrate housing portion 3 Next, the operation of the vacuum drying apparatus will be described. First, the supply of the substrate 1 is carried out. Specifically, in a state where the reaction chamber cover portion 10 is raised, a robot (not shown) is used.基板b〇t hand), etc., the substrate 1 coated with the coating liquid is The tip end portion of the ejector pin 23 is stopped at the substrate delivery position. Then, after the positioning operation of the substrate 1 is performed, the driving device is operated to drive the ejector pin 23 to position the substrate 1 in the dry position. The substrate 1 is dried, that is, after the reaction chamber lid portion i 0 is lowered and the substrate accommodating portion 30 is sealed, the vacuum pump is operated to reduce the pressure in the substrate accommodating portion 30 to dry the coating liquid on the substrate 1 Specifically, when the vacuum pump is operated and an attraction force is generated at the exhaust port 24, the suction force is transmitted through the communication port 26. in the annular suction port 25. That is, it is generated along the outer periphery of the substrate 1 being held. The annular suction port 25 is formed over the entire circumference. At this time, in the portion of the annular suction port 25 that intersects the communication port 26, the suction force is slightly larger than the portion other than the portion intersecting the communication port 26. The suction force is generated in substantially the same manner throughout the circumference of the opening 25. The suction force acts on the substrate housing portion 3 through the through hole 22b (opening portion 25a), but the through hole 22b is separated from the annular suction port 25 and the communication port. 26 crossed parts Since it is formed in a large size, a substantially uniform attraction force is generated throughout the opening 4 25a. Therefore, the same flow is generated in the substrate 1 to be held from the central portion toward the annular suction port 25 on the outer peripheral side. After the substrate accommodating portion 3 is dried under reduced pressure for a predetermined period of time, the coating liquid is dried, and then the coating substrate 取出 is taken out. Specifically, N 2 gas is supplied from the gas supply port to the substrate accommodating portion 3 〇 to make the substrate The inside of the receiving portion 30 is returned to the atmospheric pressure. Then, the reaction chamber lid portion is lifted up and the coated substrate 1 is taken out, thereby completing a series of operations of drying under reduced pressure. According to the decompression protection m ^ to the drying device as described above, since the exhaust port 24 is disposed only at a position facing the center position of the substrate 1, if the suction force acts on the exhaust port 24', the ring is in the ring. The suction of the suction bow 25 times and the entire circumference of the circular suction mouthpiece produces a general appeal. Further, since the annular suction port U has the through hole 22b (opening portion 25a) along the outer periphery of the base plate 201037251, a substantially uniform suction force can be generated in the entire opening portion 25a. As a result, the atmosphere of the substrate accommodating portion is sucked by the central portion of the substrate 1 toward the opening portion 25a on the outer peripheral side, and is discharged through the annular suction port 25 through the exhaust port 24. Therefore, since the substrate accommodating portion 30 is attracted to the atmosphere, a plurality of exhaust ports are provided in the vicinity of the inner side of the outer peripheral edge of the substrate, and suction is generated in the vicinity of the exhaust port and other places. The strength of the force is compared, and the unevenness of drying can be suppressed. Further, in the vacuum drying apparatus, the annular suction bow In 25 is formed in the reaction chamber main body 2 (the substrate holding portion), and the opening portion 25a of the annular suction port 25 generates a uniform attraction force, so that A rectifying plate must be provided as before. According to this, since the volume of the substrate accommodating portion 可 can be reduced, it is possible to suppress the occurrence of air bubbles generated in the coating ridge by the increase in the substrate accommodating portion 30, and it is possible to reduce the space of the entire apparatus. Further, in the above-described embodiment, the through hole 22b serving as the opening portion is enlarged as the distance between the annular suction port 25 and the communication port 26 is increased, but the portion that leaves the intersection is explained. 2 It is also possible to change to the larger one. That is, a plurality of through-holes 22b forming a plurality of predetermined sizes = and 22b are formed, and the large-passes of the plurality of through-holes 22b of the group are separated from each other, and each group is greatly formed. In other words, if the strength of the suction force in the annular suction force port Z 5 is adjusted by the size of the through hole 22b, the entire opening portion 25a is uniformly formed. The composition of the attraction of 丨丄 也 is also ok. Further, if the suction in the annular suction port 25 is constant, the through holes 2 2 b of all equal sizes may be used. Further, in the above-described embodiment, the example in which the opening portion 25a is formed in the shape of the opening portion 25a of the flat plate portion 22, but the flat portion of the annular suction port 25 is not covered by the flat plate portion u. In the opening portion, the opening portion 25a may be used as the opening portion 25a. Even in this configuration, the substrate 1 is surrounded by the formation of the product, and the atmosphere in which the substrate housing portion 30 is exposed is sucked by the central portion of the substrate 1 toward the opening portion 25a. Further, in the above embodiment, the communication port 26 is extended from the central position of the exhaust port 24 in the four directions, but it is not limited to the four directions. That is, since the annular suction ports 25 are connected to each other to form a ring shape, the number of the communication ports 26 is not limited to 0, and the same suction force can be applied to the entire circumference of the annular suction port 25. In addition, it is assumed that a slight strength is generated in the annular suction port 25 due to the number of the communication ports 26, and the attraction force generated by the opening portion 25a can be approximated by the arrangement method of the opening port 22b. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a state in which a reaction chamber cover portion of a vacuum drying apparatus according to an embodiment of the present invention is separated from a reaction chamber body. 〇 Figure 2 is a top plan view of the reaction chamber body of the vacuum drying apparatus. Figure 3 is a top plan view showing the base of the above reaction chamber body. Fig. 4 is a partial cross-sectional view showing a state in which the substrate of the reaction chamber body is carried. Fig. 5 is a view showing a state in which a substrate is housed in a vacuum drying apparatus. [Description of main component symbols] 1: Substrate 14 201037251 I 〇: Reaction II: Flat plate 1 2 : Side wall
2 0 :反應 2 1 :基部 21 a :銷 $ 22:平板 2 2 a :銷孑I 0 22b:貫 ϋ 2 3 :頂出 24:排氣 25:環狀 2 5 a :開 t 26:連通 30:基板 室蓋部 部 部 室本體 [容孔 部 I 口 銷 σ 吸引口 ί部 σ 收容部2 0 : Reaction 2 1 : Base 21 a : Pin $ 22: Plate 2 2 a : Pin 孑 I 0 22b: ϋ 2 3 : Eject 24: Exhaust 25: Ring 2 5 a : Open t 26: Connect 30: substrate chamber cover portion chamber body [hole portion I port pin σ suction port 部 portion σ housing portion
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