TWI509209B - Decompression drying device - Google Patents
Decompression drying device Download PDFInfo
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- TWI509209B TWI509209B TW099102819A TW99102819A TWI509209B TW I509209 B TWI509209 B TW I509209B TW 099102819 A TW099102819 A TW 099102819A TW 99102819 A TW99102819 A TW 99102819A TW I509209 B TWI509209 B TW I509209B
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- substrate
- port
- suction port
- annular suction
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- 238000001035 drying Methods 0.000 title description 15
- 230000006837 decompression Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 145
- 238000001291 vacuum drying Methods 0.000 claims description 22
- 230000002093 peripheral effect Effects 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 description 21
- 238000000576 coating method Methods 0.000 description 21
- 239000007788 liquid Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/007—After-treatment
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- Drying Of Solid Materials (AREA)
- Coating Apparatus (AREA)
Description
本發明是關於藉由使塗佈於基板(substrate)的塗佈液減壓乾燥，在基板上形成塗佈膜之減壓乾燥裝置。The present invention relates to a vacuum drying apparatus for forming a coating film on a substrate by drying a coating liquid applied to a substrate under reduced pressure.
在液晶顯示器(liquid crystal display)或電漿顯示器(plasma display)等的平面面板顯示器(flat panel display)使用有在基板上塗佈有光阻(resist)液者(稱為塗佈基板)。該塗佈基板是透過藉由塗佈裝置(coating machine)在基板上均勻地塗佈有光阻液形成有塗佈膜，然後透過藉由減壓乾燥裝置使塗佈膜乾燥而被生產。In a flat panel display such as a liquid crystal display or a plasma display, a resist liquid (referred to as a coated substrate) is applied to a substrate. The coated substrate is produced by passing a photoresist film uniformly coated on a substrate by a coating machine, and then passing through a vacuum drying apparatus to dry the coating film.
該減壓乾燥裝置例如如下述專利文獻1所示，於在藉由上部室(upper chamber)與下部室(lower chamber)形成的收容部收容基板的狀態下，藉由自排氣口(exhaust port)排出收容部的大氣使收容部減壓並使基板上的塗佈膜乾燥。The vacuum drying apparatus is, for example, as shown in the following Patent Document 1, in a state in which a substrate is housed in an accommodating portion formed by an upper chamber and a lower chamber, by an exhaust port (exhaust port) The atmosphere discharged from the accommodating portion decompresses the accommodating portion and dries the coating film on the substrate.
此時，藉由承載基板的平板(plate)當作整流板發揮功能，可抑制基板上的塗佈膜形成有乾燥不均。亦即，若使真空泵(vacuum pump)等動作並使吸引力作用於排氣口，則基板附近的大氣通過整流板的外周緣側並流入排氣口。然後，排氣口沿著承載有基板的區域的外周緣內側附近排列配 設有複數個，俾能以短時間有效地回收通過整流板的外周緣側的大氣。據此，基板附近的大氣大致均等地被排氣，可防止塗佈膜形成有乾燥不均。At this time, the plate carrying the substrate functions as a rectifying plate, and drying unevenness in the coating film formed on the substrate can be suppressed. In other words, when a vacuum pump or the like is operated and the suction force acts on the exhaust port, the atmosphere in the vicinity of the substrate passes through the outer peripheral side of the rectifying plate and flows into the exhaust port. Then, the exhaust port is arranged along the inner side of the outer periphery of the region where the substrate is carried. There are a plurality of ones, and the atmosphere passing through the outer peripheral side of the rectifying plate can be efficiently recovered in a short time. According to this, the atmosphere in the vicinity of the substrate is exhausted substantially uniformly, and drying unevenness in the coating film can be prevented.
[專利文獻1]日本國特開2005-329303號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-329303
但是，即使是記載於上述專利文獻1的減壓乾燥裝置也有抑制不完乾燥不均的情形。亦即，因排氣口沿著承載有基板的區域的外周緣內側附近配設，故在配置有排氣口的附近與其他的場所比較吸引力變強。因此，即使是配設整流板的情形，也會在排氣口的附近產生強的大氣的流動，在基板上的塗佈膜產生沿著大氣的流動的條紋狀的不均。而且，由於原封不動地被乾燥而有塗佈膜產生乾燥不均的問題。However, even in the vacuum drying apparatus described in Patent Document 1, there is a case where the drying unevenness is not suppressed. In other words, since the exhaust port is disposed in the vicinity of the inner side of the outer peripheral edge of the region in which the substrate is placed, the vicinity of the exhaust port is more attractive to other places. Therefore, even in the case where the rectifying plate is disposed, a strong atmosphere flows in the vicinity of the exhaust port, and the coating film on the substrate generates streaky unevenness in the flow along the atmosphere. Further, since the coating film is dried as it is, there is a problem that the coating film is uneven in drying.
本發明乃是鑑於上述問題點所進行的創作，其目的為提供一種減壓乾燥裝置，可抑制塗佈膜形成有乾燥不均。The present invention has been made in view of the above problems, and an object thereof is to provide a reduced-pressure drying apparatus capable of suppressing drying unevenness in formation of a coating film.
為了解決上述課題，本發明的減壓乾燥裝置，其特徵包含：收容基板之收容部；在前述收容部的規定的位置保持前述基板之基板保持部；配設於與被保持於前述基板保持部的基板的中心位置對向的位置，排出前述收容部的大氣之排氣口；具有沿著被保持於前述基板保持部的基板的外周緣開口的開口部，沿著前述基板的外周緣連通形成環狀之環狀吸引口，其中透過前述排氣口與前述環狀吸引口連通連接，若在前述排氣口產生吸引力，則前述收容部的大 氣透過前述環狀吸引口被由排氣口排出，前述環狀吸引口形成於前述基板保持部，遍及被保持於前述基板保持部的基板的外周緣全周，形成於距前述外周緣等距離的位置，前述開口部為連通於前述收容部與前述環狀吸引口的貫通口，前述貫通口沿著被保持於前述基板保持部的基板的外周緣形成，具有連通連接前述排氣口與前述環狀吸引口的連通口，連接有前述連通口的環狀吸引口部分中的貫通口比其他的部分中的貫通口小而形成。In order to solve the above problems, the vacuum drying apparatus of the present invention includes: a housing portion that accommodates a substrate; a substrate holding portion that holds the substrate at a predetermined position of the housing portion; and is disposed and held in the substrate holding portion a position opposite to a center position of the substrate, an exhaust port of the atmosphere of the accommodating portion, and an opening portion that opens along an outer peripheral edge of the substrate held by the substrate holding portion, and is formed to communicate along an outer peripheral edge of the substrate An annular annular suction port that communicates with the annular suction port through the exhaust port, and if the suction port generates an attractive force, the storage portion is large The gas is discharged through the exhaust port through the annular suction port, and the annular suction port is formed in the substrate holding portion, and is formed at an outer circumference of the substrate held by the substrate holding portion over the entire circumference, and is formed at an equidistance from the outer periphery. The opening is a through port that communicates with the accommodating portion and the annular suction port, and the through hole is formed along an outer periphery of a substrate held by the substrate holding portion, and has a communication port connecting the exhaust port and the The communication port of the annular suction port is formed such that the through hole in the annular suction port portion to which the communication port is connected is smaller than the through hole in the other portion.
依照上述減壓乾燥裝置，若在排氣口產生吸引力，則收容部的大氣一樣地透過環狀吸引口的開口部被吸引。亦即，因環狀吸引口與排氣口連通，排氣口被配置於與基板的中心位置對向的位置，故若吸引力作用於排氣口，則遍及環狀吸引口全周朝位於基板的中心位置的排氣口的吸引力作用，遍及環狀吸引口內全周大致一樣地產生吸引力。而且，因該環狀吸引口沿著基板的外周緣具有開口部，故可在該開口部全體使大致均勻的吸引力產生。據此，收容部的大氣由基板的中央部分朝位於外周緣側的開口部一樣地被吸引，透過環狀吸引口被由排氣口排出。因此，因收容部的大氣一樣地被吸引，故與如以往般由於沿著基板的外周緣內側附近設有複數個排氣口，在配置有排氣口的附近與其他的場所產生吸引力的強弱的情形比較，可抑制乾燥不均。According to the vacuum drying apparatus described above, when an attraction force is generated in the exhaust port, the atmosphere of the accommodating portion is sucked through the opening of the annular suction port. In other words, since the annular suction port communicates with the exhaust port, the exhaust port is disposed at a position opposed to the center position of the substrate. Therefore, if the suction force acts on the exhaust port, the entire circumference of the annular suction port is located. The suction force of the exhaust port at the center position of the substrate exerts an attractive force substantially uniformly throughout the entire circumference of the annular suction port. Further, since the annular suction port has an opening along the outer peripheral edge of the substrate, a substantially uniform attraction force can be generated in the entire opening portion. According to this, the atmosphere of the accommodating portion is sucked by the central portion of the substrate toward the opening portion on the outer peripheral edge side, and is discharged through the vent port through the annular suction port. Therefore, since the atmosphere of the accommodating portion is attracted as it is, as in the related art, a plurality of exhaust ports are provided in the vicinity of the inner side of the outer peripheral edge of the substrate, and attraction is generated in the vicinity of the exhaust port and other places. When the strength is weak, the unevenness of drying can be suppressed.
依照該構成，因環狀吸引口形成於距被保持的基板的外周緣等距離位置的基板保持部，故由基板的中央部分朝 位於外周緣側的環狀吸引口一樣地產生均勻的吸引力。因此，由於無須配設習知的整流板，故可減小收容部的容積。據此，可抑制伴隨收容部的增大在塗佈膜內產生的氣泡，可抑制乾燥不均的產生。According to this configuration, since the annular suction port is formed in the substrate holding portion at a position equidistant from the outer periphery of the substrate to be held, the central portion of the substrate faces The annular suction opening on the outer peripheral side produces a uniform attractive force. Therefore, since it is not necessary to provide a conventional rectifying plate, the volume of the accommodating portion can be reduced. According to this, it is possible to suppress generation of bubbles generated in the coating film accompanying an increase in the accommodating portion, and it is possible to suppress the occurrence of unevenness in drying.
依照該構成，即使是產生於環狀吸引口的吸引力在圓周方向不一樣的情形，也能藉由適宜調節貫通口的配置等，大致均勻地吸引收容部的大氣。According to this configuration, even when the suction force generated in the annular suction port is different in the circumferential direction, the atmosphere of the accommodating portion can be substantially uniformly attracted by appropriately adjusting the arrangement of the through holes.
依照該構成，在連接有連通口的排氣口部分中，來自排氣口的吸引力比其他的部分大。因此，藉由使該部分中的貫通口比其他的部分小而形成，可使該部分的吸引力比其他的部分小，可使開口部全體的吸引力大致均勻。According to this configuration, in the exhaust port portion to which the communication port is connected, the suction force from the exhaust port is larger than the other portions. Therefore, by forming the through hole in the portion smaller than the other portions, the attraction force of the portion can be made smaller than that of the other portions, and the attraction force of the entire opening portion can be made substantially uniform.
更具體為也可以製作成前述貫通口隨著離開前述連通口與前述環狀吸引口連通連接的部分逐漸地變大而形成之構成，適宜地調節，俾開口部全體的吸引力成均勻。More specifically, it is also possible to form a configuration in which the through-port is gradually increased as the portion that communicates with the annular suction port from the communication port is gradually enlarged, and is appropriately adjusted so that the suction force of the entire opening portion is uniform.
依照本發明的減壓乾燥裝置，可抑制塗佈膜形成有乾燥不均。According to the vacuum drying apparatus of the present invention, uneven formation of the coating film can be suppressed.
使用圖面說明與本發明有關的實施的形態。The form of the embodiment related to the present invention will be described using the drawings.
圖1~圖5是概略地顯示本發明的一實施形態中的減壓乾燥裝置之圖，圖1是顯示減壓乾燥裝置的反應室(chamber)蓋部10與反應室本體20分離的狀態之斜視圖，圖2是反 應室本體之頂視圖，圖3是顯示反應室本體的基部21之圖，圖4是顯示在反應室本體20承載有基板1的狀態之部分剖面圖，圖5是顯示在減壓乾燥裝置內收容有基板的狀態之圖。1 to 5 are diagrams schematically showing a vacuum drying apparatus according to an embodiment of the present invention, and Fig. 1 is a view showing a state in which a chamber lid portion 10 of the vacuum drying apparatus is separated from the reaction chamber body 20. Oblique view, Figure 2 is the opposite 3 is a view showing the base portion 21 of the reaction chamber body, FIG. 4 is a partial cross-sectional view showing a state in which the reaction chamber body 20 carries the substrate 1, and FIG. 5 is shown in the vacuum drying device. A diagram of a state in which a substrate is housed.
如圖1~圖5所示，減壓乾燥裝置是使形成於基板1上的光阻液等的塗佈膜乾燥，具備反應室本體20(基板保持部20)與反應室蓋部10。藉由該反應室本體20與後述的反應室蓋部10，如圖5所示形成有收容基板1的基板收容部30。然後，可藉由維持該基板收容部30於減壓環境，使收容於基板收容部30的基板1乾燥。As shown in FIG. 1 to FIG. 5, the vacuum drying apparatus is configured to dry a coating film of a photoresist or the like formed on the substrate 1, and includes a reaction chamber main body 20 (substrate holding portion 20) and a reaction chamber lid portion 10. As shown in FIG. 5, the reaction chamber main body 20 and the reaction chamber cover portion 10 to be described later are formed with the substrate housing portion 30 in which the substrate 1 is housed. Then, the substrate 1 accommodated in the substrate housing portion 30 can be dried by maintaining the substrate housing portion 30 in a reduced pressure environment.
此外，在以下的說明中是以圖1中的紙面上側當作減壓乾燥裝置的上方，以圖1中的紙面下側當作減壓乾燥裝置的下方進行說明。In the following description, the upper side of the paper in FIG. 1 is taken as the upper side of the vacuum drying apparatus, and the lower side of the paper surface in FIG. 1 is used as the lower side of the vacuum drying apparatus.
反應室本體20是保持形成有塗佈膜的基板1。該反應室本體20具有基部21與安裝於該基部21的頂面的平板部(plate part)22。在該平板部22形成有複數個銷孔(pin hole)22a，頂出銷(lift pin)23由該銷孔22a突出。然後，基板1藉由該突出的複數根頂出銷23的尖端部分保持。The reaction chamber body 20 is a substrate 1 that holds a coating film formed thereon. The reaction chamber body 20 has a base portion 21 and a plate part 22 attached to a top surface of the base portion 21. A plurality of pin holes 22a are formed in the flat plate portion 22, and a lift pin 23 protrudes from the pin holes 22a. Then, the substrate 1 is held by the tip end portion of the protruding plurality of ejector pins 23.
具體上在基部21於對應銷孔22a的位置形成有銷收容孔21a，在該銷收容孔21a埋設有頂出銷23。該頂出銷23與配設於基部21的下側的驅動裝置(未圖示)連接，藉由驅動該驅動裝置使頂出銷23進行升降動作，並且可在任意的位置停止。在本實施形態中被設定，俾頂出銷23可停止於被收容於基部21內的收容位置，與由平板部22突出，進行 基板1的遞送的基板遞送位置，與進行乾燥製程的乾燥位置。然後，在頂出銷23位於基板遞送位置的狀態下基板1一被承載於頂出銷23的尖端部分，就藉由未圖示的定位機構，基板1被定位於預先設定的位置後，使頂出銷下降，基板1在位於乾燥位置的狀態下被保持。此外，在該銷收容孔21a配設有氣封(seal)，即使是頂出銷23突出的狀態也能防止基板收容部30的大氣自銷收容孔21a洩漏。Specifically, a pin receiving hole 21a is formed in the base portion 21 at a position corresponding to the pin hole 22a, and an ejector pin 23 is embedded in the pin receiving hole 21a. The ejector pin 23 is connected to a driving device (not shown) disposed on the lower side of the base portion 21, and the ejector pin 23 is moved up and down by driving the driving device, and can be stopped at an arbitrary position. In the present embodiment, the dome output pin 23 can be stopped at the storage position accommodated in the base portion 21, and can be protruded from the flat plate portion 22 The substrate delivery position of the substrate 1 is delivered, and the drying position at which the drying process is performed. Then, when the ejector pin 23 is positioned at the substrate delivery position, the substrate 1 is carried on the tip end portion of the ejector pin 23, and the substrate 1 is positioned at a predetermined position by a positioning mechanism (not shown). The ejector pin is lowered, and the substrate 1 is held in a state of being in a dry position. Further, a gas seal is disposed in the pin accommodation hole 21a, and even if the ejector pin 23 protrudes, the atmosphere of the substrate accommodating portion 30 can be prevented from leaking from the pin accommodating hole 21a.
而且，反應室本體20具有排氣口24，透過自該排氣口24排出基板收容部30的大氣，使基板收容部30被減壓。在該排氣口24透過配管與未圖示的真空泵連接，藉由使真空泵動作，使吸引力作用於排氣口24，使基板收容部30的大氣被吸引。據此，基板收容部30被減壓至比大氣壓小的壓力。本實施形態中的排氣口24僅配設一個於基部21的中央部分，且對向於藉由頂出銷23保持於乾燥位置的基板1的中心位置的位置。因此，基板收容部30的大氣產生朝對向於基板1的中心位置的位置的氣流，透過排氣口24被排出。此外，在本實施形態中雖然由一個孔構成的排氣口24僅配設一個於對向於基板1的中心位置的位置，但是也可以為由複數個孔構成的排氣口24。即使是此情形，若由複數個孔構成的排氣口24的排氣區域的中心位置設於與被保持的基板1的中心位置對向的位置，則可遍及環狀吸引口25的全周使均勻的吸引力產生。Further, the reaction chamber main body 20 has an exhaust port 24, and the atmosphere of the substrate housing portion 30 is discharged from the exhaust port 24, and the substrate housing portion 30 is decompressed. The exhaust port 24 is connected to a vacuum pump (not shown) through a pipe, and by operating the vacuum pump, the suction force acts on the exhaust port 24, and the atmosphere of the substrate housing portion 30 is sucked. As a result, the substrate housing portion 30 is depressurized to a pressure smaller than atmospheric pressure. The exhaust port 24 in the present embodiment is disposed only at a central portion of the base portion 21 and is opposed to a position at the center of the substrate 1 held by the ejector pin 23 at the dry position. Therefore, the airflow of the substrate accommodating portion 30 at a position facing the center position of the substrate 1 is discharged through the exhaust port 24. Further, in the present embodiment, the exhaust port 24 formed of one hole is disposed only at a position facing the center position of the substrate 1, but may be an exhaust port 24 composed of a plurality of holes. Even in this case, if the center position of the exhaust region of the exhaust port 24 composed of a plurality of holes is provided at a position facing the center position of the substrate 1 to be held, the entire circumference of the annular suction port 25 can be extended. Make a uniform attraction.
而且，在反應室本體20具有：環狀吸引口25；與該環狀吸引口25與排氣口24連通連接的連通口26。具體上環 狀吸引口25與連通口26是藉由形成於基部21的溝與覆蓋該等溝的平板部22形成(參照圖4、圖5)。而且，在環狀吸引口25形成有開口於基板收容部30的開口部25a。因此，若使吸引力產生於排氣口24，則基板收容部30的大氣由開口部25a透過環狀吸引口25及連通口26被由排氣口24排出。Further, the reaction chamber main body 20 has an annular suction port 25 and a communication port 26 that is connected to the annular suction port 25 and the exhaust port 24. Specific ring The suction port 25 and the communication port 26 are formed by a groove formed in the base portion 21 and a flat plate portion 22 covering the grooves (see FIGS. 4 and 5). Further, an opening portion 25a that opens into the substrate housing portion 30 is formed in the annular suction port 25. Therefore, when the suction force is generated in the exhaust port 24, the atmosphere of the substrate housing portion 30 is discharged from the exhaust port 24 through the annular suction port 25 and the communication port 26 through the opening portion 25a.
環狀吸引口25沿著被頂出銷23保持的基板1的外周緣形成。具體上環狀吸引口25具有略四角形的剖面形狀(參照圖5)，沿著被保持的基板1的外周緣形成環狀。亦即，略四角形的剖面形狀的環狀吸引口25沿著被保持的基板1的外周緣連續地包圍被保持的基板1而形成。而且，環狀吸引口25遍及被保持的基板1的外周緣全周等距離地形成，在本實施形態中如圖3所示，形成於距被保持的基板1的距離α的位置。因此，若在排氣口24產生吸引力，則遍及環狀吸引口25的全周吸引力一樣地產生，吸引力對基板1全體大致一樣地作用。此外，圖2、圖3中的兩點鏈線是假想地顯示被保持的基板1的位置。The annular suction port 25 is formed along the outer periphery of the substrate 1 held by the ejector pin 23. Specifically, the annular suction port 25 has a substantially quadrangular cross-sectional shape (see FIG. 5), and is formed in a ring shape along the outer periphery of the substrate 1 to be held. That is, the annular suction port 25 having a substantially square cross-sectional shape is formed by continuously surrounding the held substrate 1 along the outer periphery of the substrate 1 to be held. Further, the annular suction port 25 is formed equidistantly over the entire circumference of the outer periphery of the substrate 1 to be held, and in the present embodiment, as shown in FIG. 3, is formed at a position a distance α from the substrate 1 to be held. Therefore, when the suction force is generated in the exhaust port 24, the entire circumference of the annular suction port 25 is generated in the same manner, and the suction force acts substantially the same on the entire substrate 1. Further, the two-dot chain line in FIGS. 2 and 3 is a position to imaginarily display the held substrate 1.
而且，環狀吸引口25藉由開口部25a連通於基板收容部30。在本實施形態中在平板部22形成有複數個貫通口22b，透過該貫通口22b連通有環狀吸引口25與基板收容部30。亦即，藉由該貫通口22b形成有開口部25a。Further, the annular suction port 25 communicates with the substrate housing portion 30 via the opening portion 25a. In the present embodiment, a plurality of through holes 22b are formed in the flat plate portion 22, and the annular suction port 25 and the substrate housing portion 30 are communicated through the through holes 22b. That is, the opening 25a is formed by the through hole 22b.
該貫通口22b是沿著被頂出銷23保持的基板1的外周緣連續地形成，包圍被保持的基板1而形成。而且，貫通口22b是遍及被保持的基板1的外周緣全周等距離β地形 成。據此，若在排氣口24產生吸引力，則遍及環狀吸引口25的全周產生的吸引力遍及貫通口22b全體大致均勻地產生，並且可使由基板1的中央部分朝貫通口22b(開口部25a)流動的氣流一樣地產生。The through hole 22b is formed continuously along the outer peripheral edge of the substrate 1 held by the ejector pin 23, and surrounds the held substrate 1. Further, the through hole 22b is an equidistance β topography over the entire circumference of the outer periphery of the substrate 1 to be held. to make. According to this, when the suction force is generated in the exhaust port 24, the suction force generated throughout the entire circumference of the annular suction port 25 is generated substantially uniformly throughout the through hole 22b, and the central portion of the substrate 1 can be directed toward the through hole 22b. The airflow flowing (opening portion 25a) is generated in the same manner.
而且，形成於環狀吸引口25與連通口26交叉的部分的貫通口22b比形成於離開該交叉的部分的位置的貫通口22b小而形成。在本實施形態中隨著離開交叉的部分，依次變大而形成。據此，藉由在環狀吸引口25產生的吸引力透過貫通口22b均勻地被吸引。亦即，在排氣口24產生的吸引力透過連通口26在環狀吸引口25全體產生，惟在環狀吸引口25中於接近連通口26的部分，亦即，在環狀吸引口25與連通口26的交叉部分中吸引力稍強地產生。因此，透過藉由在該環狀吸引口25與連通口26的交叉部分中小小地形成貫通口22b並減少大氣的吸引量，且在該交叉部分以外形成更大的貫通口22b，使大氣的吸引量更多，可藉由大小不同的貫通口22b的形成使在環狀吸引口25產生的吸引力均勻化。因此，基板收容部30的大氣遍及開口部25a全體均勻地產生吸引力，可在基板收容部30使由基板1的中央部分朝貫通口22b(開口部25a)流動的氣流一樣地產生。藉由該一樣的氣流的產生，可抑制形成於基板1的塗佈膜的乾燥不均。Further, the through hole 22b formed in a portion where the annular suction port 25 intersects the communication port 26 is formed smaller than the through hole 22b formed at a position apart from the intersecting portion. In the present embodiment, the portion that leaves the intersection is sequentially formed to be larger. Thereby, the suction force generated in the annular suction port 25 is uniformly attracted through the through hole 22b. That is, the suction force generated in the exhaust port 24 is transmitted through the communication port 26 in the entire annular suction port 25, but in the portion of the annular suction port 25 that is close to the communication port 26, that is, at the annular suction port 25. The attraction force is slightly generated in the intersection with the communication port 26. Therefore, the through hole 22b is formed in a small portion at the intersection of the annular suction port 25 and the communication port 26, and the amount of suction of the atmosphere is reduced, and a larger through hole 22b is formed outside the intersection portion to make the atmosphere The amount of attraction is larger, and the attraction force generated in the annular suction port 25 can be made uniform by the formation of the through holes 22b having different sizes. Therefore, the atmosphere of the substrate accommodating portion 30 is uniformly generated throughout the entire opening portion 25a, and the substrate accommodating portion 30 can be generated in the same manner as the airflow flowing from the central portion of the substrate 1 toward the through hole 22b (the opening portion 25a). By the generation of the same gas flow, drying unevenness of the coating film formed on the substrate 1 can be suppressed.
而且，在反應室本體20設有未圖示的氣體供給口，藉由自該氣體供給口供給N2氣體，可使基板收容部30內的減壓狀態返回到大氣壓。Further, a gas supply port (not shown) is provided in the reaction chamber main body 20, and by supplying N2 gas from the gas supply port, the decompressed state in the substrate housing portion 30 can be returned to the atmospheric pressure.
而且，如圖4、圖5所示，反應室蓋部10是可進行升降動作地形成，可對反應室本體20接離(attach and detach)。而且，透過該反應室蓋部10接近並抵接反應室本體20，藉由反應室蓋部10與反應室本體20形成有收容基板的基板收容部30。Further, as shown in FIGS. 4 and 5, the reaction chamber cover portion 10 is formed to be movable up and down, and the reaction chamber body 20 can be attached and detached. Then, the reaction chamber cover portion 10 is brought close to and abuts against the reaction chamber main body 20, and the reaction chamber cover portion 10 and the reaction chamber main body 20 are formed with a substrate housing portion 30 for accommodating the substrate.
該反應室蓋部10具有覆蓋被保持於反應室本體20的基板1的形狀，具有：與反應室本體20對面的平板狀的平板部11；由該平板部11的外周緣突出於反應室本體20側，具有包圍被保持的基板1的形狀之側壁部12。The reaction chamber cover portion 10 has a shape covering the substrate 1 held by the reaction chamber main body 20, and has a flat plate-shaped flat portion 11 opposed to the reaction chamber main body 20; the outer peripheral edge of the flat plate portion 11 protrudes from the reaction chamber body The 20 side has a side wall portion 12 that surrounds the shape of the substrate 1 to be held.
平板部11的基板收容部30側是形成平滑的平坦狀，基板收容部30的氣流(大氣的流動)不被妨礙而形成。而且，在基板收容部30側的背面側安裝有肋(rib)(未圖示)，可防止在基板收容部30被減壓的情形下平板部11變形。據此，即使是基板收容部30被減壓的情形，平板部11的基板收容部30側也能維持平坦度，可抑制基板收容部30的氣流的擾動(turbulence)，抑制乾燥不均的產生。The side of the substrate accommodating portion 30 of the flat plate portion 11 is formed in a smooth flat shape, and the air flow (the flow of the atmosphere) of the substrate accommodating portion 30 is formed without being hindered. Further, ribs (not shown) are attached to the back side of the substrate housing portion 30 side, and deformation of the flat plate portion 11 can be prevented when the substrate housing portion 30 is decompressed. According to this, even when the substrate accommodating portion 30 is decompressed, the flat portion can be maintained on the side of the substrate accommodating portion 30 of the flat plate portion 11, and the turbulence of the airflow in the substrate accommodating portion 30 can be suppressed, and the occurrence of unevenness in drying can be suppressed. .
而且，側壁部12的基板收容部30側與平板部11一樣形成平滑的平坦狀，基板收容部30的大氣的流動不被妨礙而形成。而且，在側壁部12於與反應室本體20的基部21抵接的面配設有密封構件。該密封構件被形成環狀，俾包圍被保持的基板1。據此，若使反應室蓋部10下降，則密封構件抵接反應室本體20的基部21，基板收容部30被密封。Further, the side of the substrate accommodating portion 30 of the side wall portion 12 is formed in a smooth flat shape like the flat plate portion 11, and the flow of the atmosphere in the substrate accommodating portion 30 is formed without being hindered. Further, a sealing member is disposed on the surface of the side wall portion 12 that abuts against the base portion 21 of the reaction chamber body 20. The sealing member is formed in a ring shape, and the crucible surrounds the held substrate 1. As a result, when the reaction chamber cover portion 10 is lowered, the sealing member abuts against the base portion 21 of the reaction chamber main body 20, and the substrate housing portion 30 is sealed.
其次針對減壓乾燥裝置的動作說明。Next, the operation of the vacuum drying apparatus will be described.
首先，基板1的供給被進行。具體上為在使反應室蓋部10上升的狀態下，藉由未圖示的機械手(robot hand)等使塗佈有塗佈液的基板1被承載於在基板遞送位置停止的頂出銷23的尖端部分。然後，透過在基板1的定位動作被進行後，使驅動裝置動作並驅動頂出銷23，使基板1位於乾燥位置。First, the supply of the substrate 1 is performed. Specifically, in a state in which the reaction chamber cover portion 10 is raised, the substrate 1 coated with the coating liquid is carried by the robot hand (not shown) or the like, and the ejection pin stopped at the substrate delivery position. The tip part of 23. Then, after the positioning operation of the substrate 1 is performed, the driving device is operated to drive the ejection pin 23 to position the substrate 1 at the dry position.
其次，使基板1乾燥。亦即，透過在使反應室蓋部10下降並密閉基板收容部30後，使真空泵動作並使基板收容部30內減壓，使基板1上的塗佈液乾燥。具體上若使真空泵動作並在排氣口24產生吸引力，則該吸引力透過連通口26產生於環狀吸引口25。亦即，產生於沿著被保持的基板1的外周緣形成的環狀吸引口25全周。此時，在環狀吸引口25中在與連通口26交叉的部分中吸引力比與連通口26交叉的部分以外的部分稍大，惟環狀吸引口25全周吸引力大致一樣地產生。而且，該吸引力透過貫通口22b(開口部25a)作用於基板收容部30，惟因貫通口22b隨著離開環狀吸引口25與連通口26交叉的部分變大而形成，故遍及開口部25a全體產生大致均勻的吸引力。因此，在被保持的基板1由中央部分朝位於外周緣側的環狀吸引口25產生一樣的氣流。Next, the substrate 1 is dried. In other words, after the reaction chamber cover portion 10 is lowered and the substrate accommodating portion 30 is sealed, the vacuum pump is operated to decompress the inside of the substrate accommodating portion 30, and the coating liquid on the substrate 1 is dried. Specifically, when the vacuum pump is operated and an attraction force is generated in the exhaust port 24, the suction force is transmitted through the communication port 26 to the annular suction port 25. That is, it is generated around the entire circumference of the annular suction port 25 formed along the outer periphery of the substrate 1 to be held. At this time, in the portion of the annular suction port 25 that intersects with the communication port 26, the suction force is slightly larger than the portion other than the portion that intersects the communication port 26, but the annular suction port 25 is generated substantially uniformly in the same circumference. Further, the suction force acts on the substrate accommodating portion 30 through the through hole 22b (opening portion 25a). However, since the through hole 22b is formed as the portion that intersects the annular suction port 25 and the communication port 26 becomes larger, the opening portion is formed throughout the opening portion. The whole of 25a produces a substantially uniform appeal. Therefore, the same flow of air is generated in the substrate 1 to be held from the central portion toward the annular suction port 25 on the outer peripheral side.
其次，在透過維持基板收容部30於規定時間減壓乾燥狀態使塗佈液乾燥後，進行塗佈基板1的取出。具體上為透過自氣體供給口將N2氣體供給至基板收容部30，使基板收容部30內返回到大氣壓。然後，透過使反應室蓋部10上 升並進行塗佈基板1的取出，完成一連串的減壓乾燥裝置的動作。Next, after the substrate accommodating portion 30 is maintained in a reduced-pressure dry state for a predetermined period of time, the coating liquid is dried, and then the coated substrate 1 is taken out. Specifically, the N 2 gas is supplied from the gas supply port to the substrate housing portion 30, and the inside of the substrate housing portion 30 is returned to the atmospheric pressure. Then, by passing the reaction chamber cover 10 The coating substrate 1 is taken out and the operation of a series of vacuum drying apparatuses is completed.
依照如以上說明的減壓乾燥裝置，因排氣口24僅被配置於與基板1的中心位置對向的位置，故若吸引力作用於排氣口24，則在環狀吸引口25遍及環狀吸引口25內全周產生大致均勻的吸引力。而且，因該環狀吸引口25沿著基板1的外周緣具有貫通口22b(開口部25a)，故可使大致均勻的吸引力產生於開口部25a全體。據此，基板收容部30的大氣由基板1的中央部分朝位於外周緣側的開口部25a一樣地被吸引，透過環狀吸引口25被由排氣口24排出。因此，因基板收容部30的大氣一樣地被吸引，故與如以往般由於沿著基板的外周緣內側附近設有複數個排氣口，在配置有排氣口的附近與其他的場所產生吸引力的強弱的情形比較，可抑制乾燥不均。而且，在上述減壓乾燥裝置中因環狀吸引口25形成於反應室本體20(基板保持部)，藉由該環狀吸引口25的開口部25a產生均勻的吸引力，故無須如以往般配設整流板。據此，因可減小基板收容部30的容積，故可抑制伴隨基板收容部30的增大在塗佈膜內產生的氣泡，並且可使裝置全體省空間化。According to the vacuum drying apparatus described above, since the exhaust port 24 is disposed only at a position facing the center position of the substrate 1, when the suction force acts on the exhaust port 24, the annular suction port 25 extends over the ring. A substantially uniform attraction force is generated throughout the entire circumference of the suction port 25. Further, since the annular suction port 25 has the through hole 22b (opening portion 25a) along the outer periphery of the substrate 1, a substantially uniform suction force can be generated in the entire opening portion 25a. As a result, the atmosphere of the substrate accommodating portion 30 is sucked by the central portion of the substrate 1 toward the opening portion 25a on the outer peripheral side, and is discharged through the exhaust port 24 through the annular suction port 25. Therefore, since the substrate accommodating portion 30 is attracted by the atmosphere, a plurality of exhaust ports are provided in the vicinity of the inner side of the outer peripheral edge of the substrate, and suction is generated in the vicinity of the exhaust port and other places. The strength of the force is compared, and the unevenness of drying can be suppressed. Further, in the above-described vacuum drying apparatus, the annular suction port 25 is formed in the reaction chamber main body 20 (substrate holding portion), and the opening portion 25a of the annular suction port 25 generates a uniform attraction force, so that it is not necessary to be equipped as in the past. Set the rectifier board. According to this, since the volume of the substrate accommodating portion 30 can be reduced, it is possible to suppress the occurrence of air bubbles generated in the coating film due to an increase in the substrate accommodating portion 30, and it is possible to reduce the space of the entire apparatus.
而且，在上述實施形態中雖然是針對當作開口部25a的貫通口22b隨著離開環狀吸引口25與連通口26交叉的部分而變大的例子說明，惟隨著離開該交叉的部分階段地變大者也可以。亦即，形成形成複數個規定的大小的貫通口22b的一群的貫通口22b，該一群的貫通口22b的大小 隨著離開該交叉的部分，每一群大大地形成者也可以。亦即，若為藉由貫通口22b的大小調節環狀吸引口25中的吸引力的強弱，使開口部25a全體產生均勻的吸引力之構成也可以。此外，若環狀吸引口25中的吸引力為一定，則為全部均等的大小的貫通口22b也可以。In addition, in the above-described embodiment, the through hole 22b which is the opening portion 25a is enlarged as the portion which is separated from the communication port 26 by the annular suction port 25, but the portion which leaves the intersection is described. It is also possible to become larger. That is, a plurality of through holes 22b forming a plurality of through holes 22b of a predetermined size are formed, and the size of the plurality of through holes 22b of the group As the part that leaves the intersection, each group is greatly formed. In other words, if the strength of the suction force in the annular suction port 25 is adjusted by the size of the through hole 22b, a uniform attraction force may be generated in the entire opening portion 25a. Further, if the attraction force in the annular suction port 25 is constant, the through holes 22b of all equal sizes may be used.
而且，在上述實施形態中雖然是針對開口部25a為形成於平板部22的貫通口22b的例子說明，惟不以平板部22覆蓋環狀吸引口25的開口部分，以環狀吸引口25的開口部分當作開口部25a者也可以。即使是該構成也因形成環狀，俾環狀吸引口25包圍基板1，故基板收容部30的大氣由基板1的中央部分朝開口部25a一樣地被吸引。Further, in the above-described embodiment, the opening portion 25a is an example of the through hole 22b formed in the flat plate portion 22, but the opening portion of the annular suction port 25 is not covered by the flat plate portion 22, and the annular suction port 25 is formed. The opening portion may be used as the opening portion 25a. Even if this configuration is formed in a ring shape, the ring-shaped suction port 25 surrounds the substrate 1. Therefore, the atmosphere of the substrate housing portion 30 is attracted by the central portion of the substrate 1 toward the opening portion 25a.
而且，在上述實施形態中雖然是針對連通口26由中央位置的排氣口24延伸於4方向的例子說明，惟無需限定於4方向。亦即，因環狀吸引口25連通形成環狀，故不限定於連通口26的數目，可使一樣的吸引力作用於環狀吸引口25全周。此外，假設由於設有連通口26的數目而在環狀吸引口25產生吸引力的稍微的強弱的情形，也可藉由貫通口22b的配設方法使由開口部25a產生的吸引力大致均勻。Further, in the above-described embodiment, the example in which the communication port 26 extends from the center position of the exhaust port 24 in the four directions is described, but it is not limited to the four directions. In other words, since the annular suction ports 25 are connected to each other to form an annular shape, the number of the communication ports 26 is not limited, and the same suction force can be applied to the entire circumference of the annular suction port 25. Further, it is assumed that a slight strength is generated in the annular suction port 25 due to the number of the communication ports 26, and the attraction force generated by the opening portion 25a can be made substantially uniform by the arrangement method of the through holes 22b. .
1‧‧‧基板1‧‧‧Substrate
10‧‧‧反應室蓋部10‧‧‧Reaction chamber cover
11‧‧‧平板部11‧‧‧ Flat section
12‧‧‧側壁部12‧‧‧ Sidewall
20‧‧‧反應室本體20‧‧‧Reaction room body
21‧‧‧基部21‧‧‧ base
21a‧‧‧銷收容孔21a‧‧‧ pin receiving hole
22‧‧‧平板部22‧‧‧ Flat section
22a‧‧‧銷孔22a‧‧‧ pinhole
22b‧‧‧貫通口22b‧‧‧through
23‧‧‧頂出銷23‧‧‧Top sales
24‧‧‧排氣口24‧‧‧Exhaust port
25‧‧‧環狀吸引口25‧‧‧Circular suction port
25a‧‧‧開口部25a‧‧‧ Opening
26‧‧‧連通口26‧‧‧Connecting port
30‧‧‧基板收容部30‧‧‧Substrate housing department
圖1是顯示本發明的一實施形態中的減壓乾燥裝置的反應室蓋部與反應室本體分離的狀態之斜視圖。1 is a perspective view showing a state in which a reaction chamber cover portion of a vacuum drying apparatus according to an embodiment of the present invention is separated from a reaction chamber body.
圖2是上述減壓乾燥裝置的反應室本體之頂視圖。Figure 2 is a top plan view of the reaction chamber body of the vacuum drying apparatus.
圖3是顯示上述反應室本體的基部之頂視圖。Figure 3 is a top plan view showing the base of the above reaction chamber body.
圖4是顯示在上述反應室本體承載有基板的狀態之部分剖面圖。Fig. 4 is a partial cross-sectional view showing a state in which a substrate is carried in the reaction chamber body.
圖5是顯示在減壓乾燥裝置內收容有基板的狀態之圖。Fig. 5 is a view showing a state in which a substrate is housed in a vacuum drying apparatus.
10‧‧‧反應室蓋部10‧‧‧Reaction chamber cover
11‧‧‧平板部11‧‧‧ Flat section
12‧‧‧側壁部12‧‧‧ Sidewall
20‧‧‧反應室本體20‧‧‧Reaction room body
21‧‧‧反應室本體的基部21‧‧‧The base of the reaction chamber body
22‧‧‧平板部22‧‧‧ Flat section
22b‧‧‧貫通口22b‧‧‧through
23‧‧‧頂出銷23‧‧‧Top sales
24‧‧‧排氣口24‧‧‧Exhaust port
25‧‧‧環狀吸引口25‧‧‧Circular suction port
25a‧‧‧開口部25a‧‧‧ Opening
26‧‧‧連通口26‧‧‧Connecting port
Claims (2)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009057343A JP5344690B2 (en) | 2009-03-11 | 2009-03-11 | Vacuum dryer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201037251A TW201037251A (en) | 2010-10-16 |
| TWI509209B true TWI509209B (en) | 2015-11-21 |
Family
ID=42713947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099102819A TWI509209B (en) | 2009-03-11 | 2010-02-01 | Decompression drying device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5344690B2 (en) |
| KR (1) | KR20100102528A (en) |
| CN (1) | CN101829647B (en) |
| TW (1) | TWI509209B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102072614A (en) * | 2010-12-31 | 2011-05-25 | 苏州普锐晶科技有限公司 | Application of suction drying to frequency chip washing and drying engineering |
| JP6033593B2 (en) * | 2012-07-18 | 2016-11-30 | 東レエンジニアリング株式会社 | Substrate transfer device |
| CN104296520A (en) * | 2013-07-17 | 2015-01-21 | 上海和辉光电有限公司 | Exhaust system and method of vacuum drying chamber |
| JP6872328B2 (en) * | 2016-09-06 | 2021-05-19 | 株式会社Ｓｃｒｅｅｎホールディングス | Vacuum drying device, vacuum drying system, vacuum drying method |
| CN114963742A (en) * | 2021-06-29 | 2022-08-30 | 南昌工学院 | Air uniform heating equipment for heating based on lacquer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10311676A (en) * | 1997-05-14 | 1998-11-24 | Shibaura Eng Works Co Ltd | Vacuum drying apparatus |
| TW200925538A (en) * | 2007-08-06 | 2009-06-16 | Toray Eng Co Ltd | Decompression drying device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10335437A (en) * | 1997-05-27 | 1998-12-18 | Dainippon Screen Mfg Co Ltd | Wafer processor |
| JP2006059844A (en) * | 2004-08-17 | 2006-03-02 | Seiko Epson Corp | Reduced pressure drying apparatus |
| JP3960332B2 (en) * | 2004-11-29 | 2007-08-15 | セイコーエプソン株式会社 | Vacuum dryer |
-
2009
- 2009-03-11 JP JP2009057343A patent/JP5344690B2/en not_active Expired - Fee Related
-
2010
- 2010-02-01 TW TW099102819A patent/TWI509209B/en not_active IP Right Cessation
- 2010-02-22 KR KR1020100015638A patent/KR20100102528A/en not_active Application Discontinuation
- 2010-03-08 CN CN2010101190556A patent/CN101829647B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10311676A (en) * | 1997-05-14 | 1998-11-24 | Shibaura Eng Works Co Ltd | Vacuum drying apparatus |
| TW200925538A (en) * | 2007-08-06 | 2009-06-16 | Toray Eng Co Ltd | Decompression drying device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201037251A (en) | 2010-10-16 |
| JP2010207739A (en) | 2010-09-24 |
| JP5344690B2 (en) | 2013-11-20 |
| CN101829647B (en) | 2013-12-25 |
| KR20100102528A (en) | 2010-09-24 |
| CN101829647A (en) | 2010-09-15 |
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