CN112635357B - Ultra-thin wafer laminating operation control device - Google Patents
Ultra-thin wafer laminating operation control device Download PDFInfo
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- CN112635357B CN112635357B CN202011422052.XA CN202011422052A CN112635357B CN 112635357 B CN112635357 B CN 112635357B CN 202011422052 A CN202011422052 A CN 202011422052A CN 112635357 B CN112635357 B CN 112635357B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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Abstract
The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to an ultrathin wafer laminating operation control device. The ultra-thin wafer bonding operation control device comprises: the slide glass is arranged on the working surface of the bearing platform; the wafer holding device comprises a holding cavity with an opening at one side, and the opening side of the holding cavity faces to the working surface of the bearing table; the periphery of the opening side of the sucking cavity is provided with a vacuum sucking port; the air flow control device is communicated with the suction cavity and is used for controlling the air pressure in the suction cavity; the speed control moving device is connected with the wafer holding device and is used for driving the wafer holding device to move; and the vacuum manufacturing device is communicated with the vacuum suction port and is used for adsorbing the wafer on the opening side of the holding cavity. The application provides an ultra-thin wafer laminating operation controlling means can avoid in the laminating effect process, and the wafer receives the peripheral air current influence and produces the problem of irregular deformation.
Description
Technical Field
The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to an ultrathin wafer laminating operation control device.
Background
With the increasing demand of electronic information products for performance improvement, the requirement of chip integration in a limited space is also increasing, which requires the chip to be smaller and thinner. In order to further increase the throughput of batch-produced chips and reduce the production cost, the size of substrate wafers used for manufacturing chips is increasing, and gradually transitions from 4 inches, 6 inches and 8 inches to the current 12 inches substrate wafer.
As substrate wafers are enlarged, more technical difficulties are introduced. One of them is to deal with the problems associated with wafer warpage. For example, in the process of power device chip production, in order to continuously improve the performance of the power device, processing needs to be performed on increasingly thinner substrate wafers; furthermore, the original 12-inch substrate wafer needs to be ground through a back thinning process, so that the thickness of the wafer is reduced, and the problem caused by wafer warping is further amplified through the back thinning process.
In order to solve the problem, the related technology introduces a slide glass technology, namely, a slide glass which is consistent with the size of the wafer and has higher rigidity is used, and the slide glass is attached to the wafer and then operated. Thus, the effect of thick wafer operation can be achieved.
In the related technology, when the bonding operation of the wafer and the carrier is carried out, the wafer is sucked and moved onto the carrier through the wafer sucking device, but for the ultrathin wafer, the hardness of the ultrathin wafer is weakened compared with the wafer with the conventional thickness, and in the bonding action process, the wafer is easily affected by peripheral airflow to generate irregular deformation, so that the wafer and the carrier cannot be tightly bonded, and further the subsequent process operation is affected.
Disclosure of Invention
The application provides an ultra-thin chip laminating operation controlling means can avoid in the laminating effect in-process, the wafer receives peripheral air current to influence and produces the problem of irregular deformation.
The application provides an ultra-thin wafer laminating operation controlling means, ultra-thin wafer laminating operation controlling means includes:
the slide glass is arranged on the working surface of the bearing platform;
the wafer sucking device comprises a sucking cavity with an opening at one side, and the opening side of the sucking cavity faces to the working surface of the bearing table; a vacuum suction port is arranged around the opening side of the suction cavity;
the air flow control device is communicated with the suction cavity and is used for controlling the air pressure in the suction cavity;
the speed control moving device is connected with the wafer holding device and is used for driving the wafer holding device to move;
and the vacuum manufacturing device is communicated with the vacuum suction port and is used for adsorbing the wafer on the opening side of the suction cavity.
Optionally, the air flow control device comprises an air flow input passage;
the airflow input passage is used for inputting airflow with stable pressure from the holding cavity to the opening side of the holding cavity.
Optionally, the gas flow input passage comprises a pneumatic valve, a pressure control flowmeter and a spray head;
the spray head is arranged in the holding cavity and used for controlling the flow meter and the pneumatic valve according to pressure and spraying airflow with stable pressure to the opening side of the holding cavity.
Optionally, the pneumatic valve, the pressure control flowmeter and the nozzle are sequentially communicated according to the airflow direction.
Optionally, the spray head is located in the middle of the holding cavity, and is configured to spray an air flow to the middle of the open side of the holding cavity.
Optionally, the air flow control device comprises an air flow output passage;
the gas flow output passage adjusts the gas pressure in the holding cavity by discharging the gas in the holding cavity.
Optionally, a pressure sensor is arranged in the suction cavity;
the pressure sensor is used for acquiring pressure information of the holding cavity and transmitting the pressure information to the control unit;
the control unit controls the gas flow input by the gas flow input passage according to the pressure information, and controls the gas flow discharged by the gas flow output passage.
Optionally, the carrier sheet includes a conductive material, and an electrostatic layer can be formed on a surface of the carrier sheet by charging the carrier sheet.
Optionally, the control device for the ultra-thin wafer attaching operation comprises a charging power supply, and the charging power supply is used for charging the slide glass.
The technical scheme at least comprises the following advantages: the airflow control device includes an airflow input passage for inputting airflow of a stable pressure to the open side of the holding cavity. After a sealed cavity is formed between the main body part of the wafer and the suction cavity, the stable pressure air flow input to the opening side of the suction cavity by the air flow input passage acts on the inner surface of the wafer to stabilize the dynamic pressure of the back surface of the wafer, avoid the problem that the wafer is deformed by resistance air flow which moves downwards due to over-thinness of the wafer in the downward moving process, and ensure that the bonding process of the wafer and a carrier glass is more reliable.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic cross-sectional view of an ultra-thin wafer bonding operation control apparatus according to an embodiment of the present disclosure;
FIG. 2 is a schematic cross-sectional view of the control apparatus for ultra-thin die attachment operation at the moment when the central portion of the wafer overhang contacts the surface of the carrier;
fig. 3 is a schematic cross-sectional view illustrating a carrier and a wafer attachment according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making creative efforts belong to the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be connected through the inside of the two elements, or may be connected wirelessly or through a wire. The specific meaning of the above terms in this application will be understood to be a specific case for those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Fig. 1 is a schematic cross-sectional structural diagram of an ultra-thin wafer bonding operation control apparatus according to an embodiment of the present application, where the ultra-thin wafer bonding operation control apparatus includes: the wafer processing apparatus comprises a working chamber 100, wherein a susceptor 110 and a wafer holding device 120 are respectively disposed on two opposite sides of the working chamber 100, the susceptor 110 includes a working surface 111, the working surface 111 faces the wafer holding device 120, and the wafer holding device 120 is used for holding a wafer 200 and driving the wafer 200 to move onto the working surface 111. The ultra-thin wafer bonding operation control device further comprises: a gas flow control device 300, a speed control traveling device 150, and a vacuum manufacturing device 130.
The working surface 111 of the bearing table 110 is provided with a slide 140.
The wafer holding device 120 includes a holding chamber 121 with an opening at one side, and the opening side of the holding chamber 121 faces the working surface 111 of the susceptor 110; a vacuum suction port 122 is formed around the opening side of the holding chamber 121.
The air flow control device 300 is communicated with the holding cavity 121 and is used for controlling the air pressure in the holding cavity 121.
The speed control moving device 150 is connected to the wafer holding device 120, and is configured to drive the wafer holding device 120 to move.
The vacuum manufacturing apparatus 130 communicates with the vacuum suction port 122 for sucking the wafer 200 to the opening side of the holding chamber 121.
As shown in fig. 1, after the wafer 200 is picked up, the wafer holding apparatus 120 sucks the wafer 200, the edge portion of the wafer 200 covers the vacuum suction port 122, and the main portion of the wafer 200 covers the opening of the holding chamber 121. After the vacuum manufacturing apparatus 130 is operated, air between the vacuum suction port 122 and the edge portion of the wafer 200 is exhausted, so that the edge portion of the wafer 200 is sucked around the suction chamber 121, and a sealed chamber is formed between the main body portion of the wafer 200 and the suction chamber 121. The pressure in the sealed chamber is controlled by the gas flow control means 300 so that the pressure in the sealed chamber is greater than the external ambient pressure. The wafer holding device 120 with the wafer 200 thereon is controlled to move at a constant speed by the speed control moving device 150.
In this embodiment, the airflow control device 300 includes an airflow input passage 310 for inputting airflow at a stable pressure from the holding cavity 121 to the opening side of the holding cavity 121. After a sealed cavity is formed between the main body portion of the wafer 200 and the holding cavity, the stabilized airflow inputted from the airflow input path to the opening side of the holding cavity acts on the inner surface of the wafer 200 to stabilize the dynamic pressure of the back surface of the wafer 200, thereby avoiding the problem that the wafer 200 is deformed by the resistance airflow moving downwards due to the thinness of the wafer 200 in the process of moving downwards. Optionally, the pressure-stabilized airflow acts on the middle of the inner surface of the wafer, so that the middle of the wafer protrudes downwards, and the resistance of the downward movement of the wafer can be reduced.
The air flow input passage 310 includes an air-operated valve 311, a pressure control flow meter 312, and a nozzle 313, which are sequentially communicated in an air flow direction; the nozzle 313 is disposed in the holding cavity 121, and is configured to control the flow meter 312 and the pneumatic valve 311 according to pressure, and inject airflow with stable pressure to the opening side of the holding cavity 121. Optionally, the nozzle 313 is located in the middle of the holding cavity 121 and is configured to inject an air flow to the middle of the opening side of the holding cavity 121, so that a steady air flow can act on the middle of the inner surface of the wafer 200, and the middle of the wafer 200 protrudes downward, so that the resistance of the wafer 200 to move downward can be reduced.
In order to regulate the pressure in the sealed cavity and prevent the pressure in the sealed cavity from being excessive, the airflow control device 300 includes an airflow output passage 320; the gas flow output passage 320 adjusts the gas pressure in the holding chamber 121 by discharging the gas in the holding chamber 121. Optionally, the gas flow output passage 320 includes a gas outlet 321 and a gas outlet valve 322 which are sequentially communicated in the gas flow direction, and the gas outlet 321 is located at the outer periphery of the middle portion of the suction chamber 121. In this embodiment, the shower head 313 is located in the middle of the suction chamber 121, the gas outlet 321 is located in the suction chamber 121 at the periphery of the shower head 313, and is used for enabling the gas flow jetted by the shower head 313 to enable the stable pressure gas flow to act on the middle of the inner surface of the wafer 200, and the gas outlet 321 properly discharges the gas at the outermost periphery of the sealed chamber, so that the middle of the wafer 200 protrudes downward.
Fig. 2 is a schematic cross-sectional structural view of the control device for ultra-thin die attach operation at the moment when the central portion of the wafer protrusion contacts the surface of the carrier, as shown in fig. 2, the wafer 200 is driven by the speed control moving device 150 to move downward toward the carrier 140 until the central portion of the wafer 200 protrusion contacts the surface of the carrier 140, the air flow input path 310 and the air flow output path 320 cooperate with the speed control moving device 150, so that the speed control moving device 150 controls the wafer 200 to continuously descend at a constant speed, the air flow input path 310 stops working, the air flow output path 320 cooperates with the release of air in the sealed cavity, the air pressure in the sealed cavity is reduced until the surface of the wafer 200 completely contacts the carrier 140, the vacuum manufacturing device 130 stops working, and the wafer holding device 120 releases the wafer 200.
The exhaust valve 322 and the pressure control flowmeter 312 are both in signal connection with the control unit 400, and a pressure sensor 123 is arranged in the suction cavity 121; the pressure sensor 123 is configured to collect pressure information of the holding cavity 121 and transmit the pressure information to the control unit 400; the control unit 400 sends control signals to the pressure control flow meter 312 and the exhaust valve 322 according to the pressure information, controls the gas flow rate input by the gas flow input path 310, and controls the opening degree of the exhaust valve 322, that is, controls the gas flow rate discharged from the gas flow output path 320.
As for the carrier 140, a glass carrier is generally used in the related art, and an adhesive layer is formed on the surface of the glass carrier, and the wafer is attached to the carrier by contacting the wafer with the adhesive layer, but such a glass carrier is a disposable material, which results in high production cost. In order to make the carrier sheet reusable and effectively reduce the production cost, fig. 3 shows a cross-sectional structure diagram of a carrier sheet and a wafer attachment of the present embodiment, as shown in fig. 3, the carrier sheet 140 in the present embodiment includes a conductive material, and an electrostatic layer can be formed on the surface of the carrier sheet 140 by charging the carrier sheet 140. The control device for the ultra-thin wafer bonding operation provides a charging power source 500, the slide 140 is charged by the charging power source 500, and the charging power source 500 may be a dc power source. The electrostatic layer can form a stable electrostatic field, under the action of the electrostatic field, when the wafer 200 is contacted with the surface of the slide glass 140, the contact surface of the wafer 200 generates a corresponding induction electrostatic field, and the electrostatic field on the surface of the slide glass 140 and the electrostatic field on the surface of the wafer 200 are mutually adsorbed to complete the bonding of the slide glass 140 and the wafer 200. The embodiment enables the slide glass to be repeatedly used in an electrostatic adsorption mode, and production cost can be effectively reduced. As shown in fig. 2, when the speed control moving device 150 drives the wafer 200 to move downward toward the slide glass 140, since the middle of the wafer 200 protrudes downward, the protruding middle of the wafer 200 contacts the surface of the slide glass 140 first, and exhausts with the airflow output path, and then the contact portion between the wafer 200 and the slide glass 140 gradually extends toward the edge of the wafer 200, so that the air between the wafer 200 and the slide glass 140 is exhausted, thereby avoiding the problem of reduced adsorption force caused by the presence of bubbles between the wafer 200 and the slide glass 140, and achieving the effect of tight adhesion; thereby ensuring the smooth proceeding of other procedures of the ultrathin wafer.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention are intended to be covered by the present invention.
Claims (7)
1. The utility model provides an ultra-thin wafer laminating operation controlling means which characterized in that, ultra-thin wafer laminating operation controlling means includes:
the slide glass is arranged on the working surface of the bearing table;
the wafer sucking device comprises a sucking cavity with an opening at one side, and the opening side of the sucking cavity faces to the working surface of the bearing table; a vacuum suction port is arranged around the opening side of the suction cavity;
the air flow control device is communicated with the suction cavity and is used for controlling the air pressure in the suction cavity;
the speed control moving device is connected with the wafer holding device and is used for driving the wafer holding device to move;
the vacuum manufacturing device is communicated with the vacuum suction port and is used for enabling the wafer to be adsorbed on the opening side of the holding cavity;
the air flow control device comprises an air flow input passage and an air flow output passage;
the airflow input passage is used for inputting airflow with stable pressure from the suction cavity to the opening side of the suction cavity;
the gas flow output passage adjusts the gas pressure in the holding cavity by discharging the gas in the holding cavity.
2. The ultra-thin wafer bonding operation control apparatus of claim 1 wherein the gas flow input path comprises a pneumatic valve, a pressure control flow meter, and a showerhead;
the spray head is arranged in the holding cavity and used for controlling the flow meter and the pneumatic valve according to pressure and spraying airflow with stable pressure to the opening side of the holding cavity.
3. The ultra-thin wafer bonding operation control device of claim 2, wherein the pneumatic valve, the pressure control flow meter and the shower head are sequentially communicated in an air flow direction.
4. The ultra-thin wafer bonding operation control apparatus as claimed in claim 2, wherein said shower head is located at a central portion of said holding chamber for jetting an air flow toward a central portion of an open side of said holding chamber.
5. The ultra-thin wafer bonding operation control apparatus of claim 1 wherein a pressure sensor is disposed in the holding chamber;
the pressure sensor is used for acquiring pressure information of the holding cavity and transmitting the pressure information to the control unit;
the control unit controls the gas flow input by the gas flow input passage according to the pressure information and controls the gas flow discharged by the gas flow output passage.
6. The ultra-thin wafer bonding operation control device of claim 1, wherein the carrier comprises a conductive material, and an electrostatic layer can be formed on the surface of the carrier by charging the carrier.
7. The ultra-thin wafer bonding operation control device of claim 6, wherein the ultra-thin wafer bonding operation control device comprises a charging power source for charging the carrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011422052.XA CN112635357B (en) | 2020-12-08 | 2020-12-08 | Ultra-thin wafer laminating operation control device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011422052.XA CN112635357B (en) | 2020-12-08 | 2020-12-08 | Ultra-thin wafer laminating operation control device |
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| CN112635357A CN112635357A (en) | 2021-04-09 |
| CN112635357B true CN112635357B (en) | 2022-10-28 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751224A (en) * | 2011-04-22 | 2012-10-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sucker, sucker system and transmission system with sucker |
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- 2020-12-08 CN CN202011422052.XA patent/CN112635357B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751224A (en) * | 2011-04-22 | 2012-10-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sucker, sucker system and transmission system with sucker |
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| CN112635357A (en) | 2021-04-09 |
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