200949866 六、發明說明： 【發明所屬之技術領域】 本發明是有關於電阻金屬板低電阻晶片電阻器及其製 造方法。 【先前技術】 * 在檢測出通電於電動機或開關調整器的控制電路時的 Ο 電流的分路電阻器的電子零件，以往就使用電極層形成於 合金所成的板狀的金屬電阻體的兩端的金屬板晶片電阻器 ，其電阻値是較低，被設定在數ιηΩ至1Ω左右，對於此種 金屬板晶片電阻器冀望著穩定電阻溫度係數及電流特性， 抑制成低電感値，及作成高精度化電流檢測，對應於此的 晶片電阻器的製造方法被記載於日本專利公開2003-1 1 5401 號(JP-2003-1 1 540 1 -Α)。 亦即，在JP-2003-1 1 5401-A，記載著將銅等的高導電 ® 性材料的薄片藉由壓著或熔接來固定於金屬電阻體的兩端 部以形成電極，沿著長度方向削掉金屬電阻體的側面，或 是朝厚度方向削掉金靥電阻體的上下面，藉由調整該削取 加工的尺寸來調整電阻値，而將保護膜設於金屬電阻體的 露出面的低電阻器的製造方法。 在該低電阻器的製造方法中，一面削掉金屬電阻體的 側面或上下面一面調整電阻値的工程上多費時間，而有降 低生產性的問題，又，並未記載將銅等的高導電性材料的 薄片壓著或熔接於金屬電阻體所用的具體性方法，實際上 -5- 200949866 很難將”-2003-1 1 540 1-人的方法導入到生產現場。 又，在日本專利公開平11-97203號（JP-11-97203-A) ，記載著在陶瓷基板的表面重疊錳銅、康銅等的銅合金所 成的片狀電阻體，並且在背面重疊銅板，藉由使用銀焊等 的活性化金屬法一體地接合，而在片狀電阻體的兩端設置 電流、電壓檢測用的接合電極部的分路電阻元件。 ， 然而，以包含活性金屬的焊材接合陶瓷基板與片狀電 - 阻體（電阻金屬板）的場合，其焊材爲高價格，且接合時 © 間過多而有降低生產性的課題。 【發明內容】 本發明是爲了解決上述課題者，其目的是在於提供一 種欲檢測的電流値爲例如5A以上的較高時，因需要電阻値 爲不足1 m Ω的電阻金屬板低電阻晶片電阻器，因此不必 經煩雜的工程就可製造具有高信賴性的不足1 ιηΩ的低電 阻晶片電阻器的方法。 〇 又，本發明的其他目的’是在於提供一種欲檢測的電 流値爲例如5Α以上的較高時，因需要電阻値爲不足1 ιηΩ 的電阻金屬板低電阻晶片電阻器，因此不必經煩雜的工程 就可製造的不足1 ιηΩ的低電阻的電阻金屬板晶片電阻器 〇 在本發明’利用記載於以下的（1)至（5)的手段， 上述課題被解決。 (1 )在本發明中’提供一種電阻金屬板低電阻晶片 -6 - 200949866 電阻器的製造方法，其特徵爲：在電阻金屬板的一方的一 面或兩面焊接銅板，從表面除去氧化膜之後，藉由在上述 銅板的表面全領域形成鍍錫膜以形成集合複層板體，以所 期望的寬度薄長方形狀地切斷該集合複層板體而形成薄長 方形狀複層板體，從形成有該薄長方形狀複層板體的鍍錫 膜的一方的一面或兩面，以所定寬度朝長邊方向切削短邊 方向的大約中央，除去鍍錫膜、銅板、焊材，及電阻金屬 〇 板與焊材的至少擴散層而在一方的一面或兩面形成凹部， ' 在該凹部的底面形成保護膜之後，以所期望的寬度切斷上 述薄長方形狀複層板體而製造晶片狀電阻器。 (2) 在本發明中，提供上述（1)所述的電阻金屬板 低電阻晶片電阻器之製造方法，上述電阻金屬板爲含有90 重量％以上銅的合金，爲特徵者。 (3) 在本發明中，提供上述（1)所述的電阻金屬板 低電阻晶片電阻器之製造方法，藉由銅-銀二元合金所成 © 的焊材，焊接上述電阻金靥板與上述銅板，爲其特徵者。 (4) 在本發明中，提供上述（1)所述的電阻金屬板 低電阻晶片電阻器之製造方法，藉由含有聚醯胺醯亞胺樹 脂的材料，在上述凹部的底面形成保護膜，爲其特徵者。 (5 )在本發明中，提供一種電阻金屬板低電阻晶片 電阻器，其特徵爲：在電阻金屬板的一方的一面或兩面焊 接銅板，從表面除去氧化膜之後，藉由在上述銅板的表面 全領域形成鍍錫膜以形成集合複層板體，以所期望的寬度 薄長方形狀地切斷集合複層板體，從形成有薄長方形狀複 200949866 層板體的鍍錫膜的一方的一面或兩面，以所定寬度朝長邊 方向切削短邊方向的大約中央，除去鍍錫膜、銅板、焊材 ，及電阻金屬板與焊材的至少擴散層而在一方的一面或兩 面形成凹部，在該凹部的底面形成保護膜之後，以所期望 的寬度晶片狀地切斷薄長方形狀複層板體所形成者。 又，從形成有薄長方形狀的複層板體的鍍錫膜的一方 的一面或兩面，以所定寬度朝長邊方向切削短邊方向的大 約中央，除去鍍錫膜、銅板、焊材、及電阻金屬板與焊材 © 的至少擴散層而在一方的一面或兩面形成的工程中，凹部 的切削深度，是例如對於抽樣的薄長方形狀的複層板體， 使用顯微鏡等而以目視等進行計測，由此設定成可確實地 除去電阻金屬板與焊材的擴散層的深度。因此，在該工程 中，除了擴散層之外電阻金屬板也被切削些微的厚度。 在本發明中，在電阻金屬板的單面或兩面焊接銅板， 對於在銅板的表面全領域形成鍍錫膜所成的薄長方形狀的 複層板體，從形成有鍍錫膜的單面或兩面，以所定寬度朝 Ο 長度方向切削短邊的大約中央，由此將鍍錫膜、銅板、焊 材、及電阻金屬板與焊材的擴散層一倂從單面或兩面予以 除去而形成凹部，而在凹部的底面形成保護膜之後’以所 期望的寬度切斷薄長方形狀複層板體’而製造晶片狀電阻 器之故，因而對於個個晶片狀的電阻器不必實施削掉工程 ，而成爲有效率地製造具有高信賴性的不足1的低電 阻晶片電阻器。 在本發明中，作爲電阻金屬板，使用含有90重量％以 -8 - 200949866 上銅的合金之故，因而在與被焊接於該單面或兩面的銅板 之間膨脹係數上並不會發生不同，而在焊接工程的高溫處 理後也不會發生彎曲，而可防止依彎曲所導致的加工精度 的降低。 在本發明中，藉由銅-銀二元合金所成的焊材，焊接 電阻金屬板與銅板之故，因而成爲可將電阻金屬板與銅板 作成歐姆接觸（歐姆性接觸或ohmic contact)。 〇 在本發明中，藉由含有聚醯胺醯亞胺樹脂的材料，在 ~ 凹部底面形成保護膜之故，因而可保證與電阻金屬板的耐 • 環境性的特性。 【實施方式】 以下，針對於本發明的實施形態參照圖式加以說明， 惟本發明是並不被限定於此者。 第1圖是表示一實施形態的電阻金屬板低電阻晶片電 阻器10的立體圖，第2圖是表示不相同的實施形態的電阻 金屬板低電阻晶片電阻器30的立體圖。 第1圖的電阻金屬板低電阻晶片電阻器10，是在電阻 金屬板11的一方的一面藉由焊材12焊接作爲電極的銅板13 ，而在銅板13上形成鍍錫膜14’從大約中央部除去鍍錫膜 14、銅板13、焊材12，及焊材12與電阻金屬板擴散層 而形成凹部15’在該凹部15的底面形成保護膜16者。 又’第2圖的電阻金屬板低電阻晶片電阻器3〇，是在 電阻金屬板31的兩面藉由焊材32、32焊接銅板33、33，而 200949866 在雙方的銅板33、33上形成鍍錫膜34、34，從兩面的大約 中央部除去鍍錫膜34、34、銅板33、33、焊材32、33、及 焊材32、32與電阻金屬板31的至少擴散層而在兩面形成凹 部35、35，在雙方的凹部35、35的底面形成保護膜36、36 者。 在此，上述電阻金屬板11、31，是可使用含有90重量 %以上銅的合金的板體，作爲此種合金，可列舉例如含有 Cu與Ni的合金，含有Cu與Μη與Sn的合金，含有Cu與Μη與 ©200949866 VI. Description of the Invention: [Technical Field] The present invention relates to a resistor metal plate low resistance chip resistor and a method of fabricating the same. [Prior Art] * In the electronic component of the shunt resistor that detects the current flowing to the control circuit of the motor or the switching regulator, two of the plate-shaped metal resistors formed of the alloy layer by the electrode layer have been conventionally used. The metal plate chip resistor at the end has a lower resistance , and is set at a number of ΔηΩ to 1 Ω. For such a metal plate chip resistor, the temperature coefficient and current characteristics of the stable resistance are expected to be suppressed, and the low inductance 値 is suppressed and made high. The method of manufacturing a wafer resistor corresponding to this is described in Japanese Patent Laid-Open Publication No. 2003-1 1 5401 (JP-2003-1 1 540 1 - Α). In JP-2003-1 1 5401-A, it is described that a sheet of a highly conductive material such as copper is fixed to both ends of a metal resistor by crimping or welding to form an electrode along the length. The direction of the metal resistor body is cut off, or the upper and lower surfaces of the metal resistor body are cut off in the thickness direction, and the resistance 値 is adjusted by adjusting the size of the dicing process, and the protective film is placed on the exposed surface of the metal resistor body. A method of manufacturing a low resistor. In the method of manufacturing the low-resistor, it takes a lot of time to adjust the resistance of the side surface or the upper and lower surfaces of the metal resistor, and the productivity is lowered, and the copper is not described. The specific method used for the sheet of conductive material to be pressed or welded to the metal resistor. In fact, it is difficult to introduce the method of "-2003-1 1 540 1-person to the production site. - In addition, the Japanese patent Japanese Patent Publication No. Hei 11-97203 (JP-11-97203-A) discloses a sheet-like resistor formed by laminating a copper alloy such as manganese or copper or a constantan on the surface of a ceramic substrate, and a copper plate is stacked on the back surface to be used. An active metal method such as silver solder is integrally bonded to each other, and a shunt resistor element for a junction electrode portion for current and voltage detection is provided at both ends of the chip resistor. However, the ceramic substrate is bonded to the solder material containing the active metal. In the case of a sheet-like electric-resistance (resistance metal plate), the welding material is expensive, and there is a problem that the amount of the material is too large and the productivity is lowered. [Invention] The present invention has been made to solve the above problems. purpose In order to provide a low-resistance chip resistor having a resistance 値 of less than 1 m Ω when the current 値 to be detected is higher than, for example, 5 A or more, it is possible to manufacture a highly reliable semiconductor device without complicated work. A method of a low-resistance chip resistor of less than 1 ηηΩ. Further, another object of the present invention is to provide a resistance metal having a resistance 値 of less than 1 ηΩ when a current 値 to be detected is higher than, for example, 5 Α or more. Since the board has a low-resistance chip resistor, a low-resistance resistance metal plate wafer resistor of less than 1 ηηΩ which can be manufactured without complicated work is used in the present invention by the means (1) to (5) described below. The above problem is solved. (1) In the present invention, a method for manufacturing a resistor metal plate low resistance wafer-6 - 200949866 resistor is provided, characterized in that a copper plate is welded on one side or both sides of a resistance metal plate from the surface After removing the oxide film, a tin-plated film is formed on the entire surface of the surface of the copper plate to form a laminated layer body, which is thin and has a desired width. The aggregated plate body is cut to form a thin rectangular composite plate body, and one side or both surfaces of the tin plating film on which the thin rectangular composite plate body is formed is cut in a longitudinal direction with a predetermined width. In the center of the short-side direction, at least the diffusion layer of the tin-plated film, the copper plate, the consumable material, and the electric resistance metal plate and the consumable material is removed, and a concave portion is formed on one surface or both surfaces, and after a protective film is formed on the bottom surface of the concave portion, A wafer-shaped resistor is produced by cutting the above-mentioned thin rectangular-shaped multi-layered board body with a desired width. (2) In the invention, the method for manufacturing the resistor metal plate low-resistance chip resistor according to the above (1) is provided. The electric resistance metal plate is an alloy containing 90% by weight or more of copper. (3) In the invention, the method for producing a low resistance chip resistor for a resistive metal plate according to (1) above, which is provided by copper- The welding material of the silver binary alloy is welded, and the above-mentioned electric resistance metal plate and the above copper plate are welded. (4) The method for producing a low-resistance chip resistor for a resistive metal sheet according to the above (1), wherein a protective film is formed on a bottom surface of the concave portion by a material containing a polyamide amide imide resin. Characterized by it. (5) In the present invention, there is provided a resistive metal plate low-resistance chip resistor characterized in that a copper plate is welded on one or both sides of a resistive metal plate, and an oxide film is removed from the surface by the surface of the copper plate A tin-plated film is formed in all areas to form a laminated multi-layered plate, and the laminated plate body is cut into a thin rectangular shape with a desired width, and one side of a tin-plated film having a thin rectangular shape of a 200949866 layer is formed. On both sides, the center of the short side direction is cut in the longitudinal direction with a predetermined width, and the tin plating film, the copper plate, the welding material, and at least the diffusion layer of the resistance metal plate and the welding material are removed to form a concave portion on one or both sides. After the protective film is formed on the bottom surface of the concave portion, the thin rectangular laminated plate body is formed in a wafer shape with a desired width. Further, one or both surfaces of the tin-plated film having the thin rectangular-shaped multi-layered plate body are cut at approximately the center in the short-side direction in the longitudinal direction with a predetermined width to remove the tin-plated film, the copper plate, the consumable material, and In the process of forming the resistive metal plate and the at least one diffusion layer of the consumable material © on one surface or both surfaces, the depth of cut of the concave portion is, for example, a thin rectangular laminated plate body sampled by a microscope or the like using a microscope or the like. The measurement is thus set such that the depth of the diffusion layer of the electric resistance metal plate and the welding material can be surely removed. Therefore, in this project, the resistive metal plate is cut to a slight thickness in addition to the diffusion layer. In the present invention, a copper plate is welded on one or both sides of a resistive metal plate, and a thin rectangular laminated plate formed by forming a tin-plated film over the entire surface of the copper plate is formed from a single side on which a tin-plated film is formed or On both sides, the center of the short side is cut in the longitudinal direction of the predetermined width, thereby removing the diffusion layer of the tin plating film, the copper plate, the welding material, and the resistance metal plate and the welding material from one side or both sides to form a concave portion. After the protective film is formed on the bottom surface of the concave portion, the thin rectangular-shaped multi-layered plate body is cut at a desired width to manufacture a wafer-shaped resistor. Therefore, it is not necessary to perform a chipping process for each of the wafer-shaped resistors. In addition, it is effective to manufacture a low-resistance chip resistor of less than one with high reliability. In the present invention, as the electric resistance metal plate, an alloy containing 90% by weight of copper on -8 - 200949866 is used, and thus the expansion coefficient does not differ from the copper plate welded to the one or both sides. However, the bending does not occur after the high-temperature treatment of the welding process, and the processing precision due to the bending can be prevented from being lowered. In the present invention, the consumable material formed by the copper-silver binary alloy is welded to the resistive metal plate and the copper plate, so that the resistive metal plate can be made into ohmic contact (ohmic contact) with the copper plate.本 In the present invention, the protective film is formed on the bottom surface of the concave portion by the material containing the polyamidoximine resin, thereby ensuring the environmental resistance characteristics of the resistive metal plate. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. Fig. 1 is a perspective view showing a resistive metal plate low-resistance chip resistor 10 according to an embodiment, and Fig. 2 is a perspective view showing a resistive metal plate low-resistance chip resistor 30 of a different embodiment. The resistive metal plate low-resistance chip resistor 10 of Fig. 1 is a copper plate 13 on which one side of the resistive metal plate 11 is welded as an electrode by a solder material 12, and a tin-plated film 14' is formed on the copper plate 13 from about the center. The tin plating film 14, the copper plate 13, the solder material 12, and the solder material 12 and the resistive metal plate diffusion layer are formed to form the concave portion 15'. The protective film 16 is formed on the bottom surface of the concave portion 15. Further, in the resistive metal plate low-resistance chip resistor 3 of the second drawing, the copper plates 33 and 33 are welded to the both surfaces of the resistive metal plate 31 by the welding materials 32 and 32, and the 200949866 is plated on the copper plates 33 and 33 of both sides. The tin films 34 and 34 are formed on both sides by removing the tin plating films 34 and 34, the copper plates 33 and 33, the consumables 32 and 33, and the welding materials 32 and 32 and at least the diffusion layer of the electric resistance metal plate 31 from the center portions of the both surfaces. The concave portions 35 and 35 form the protective films 36 and 36 on the bottom surfaces of the concave portions 35 and 35. Here, the resistive metal sheets 11 and 31 are sheets in which an alloy containing 90% by weight or more of copper is used. Examples of such an alloy include an alloy containing Cu and Ni, and an alloy containing Cu and Mn and Sn. Contains Cu and Μη with ©
Sn與Ge的合金等。又，上述焊材12、32是銅-銀二元的共 晶合金所成的焊材，例如可使用在JIS.Z.3261中被規定爲 _ BAg-8的銀焊。BAg-8是含有72% Ag，28% Cu，而熔融溫 度是固相線及液相線都爲780 °C的銀焊。上述保護膜16、 36是可由含有聚矽氧耦合劑或二氧化矽的無機-有機複合 材料的聚醯胺醯亞胺所形成。 以下，針對於第1圖的電阻金屬板低電阻晶片電阻器 10的製造方法，參照第1圖及第3圖加以說明。 〇 例如，擬製造長度13 mm，寬度6.3 mm的電阻金屬板 低電阻晶片電阻器10時，最初，在含有90重量％以上銅的 合金板體所成的電阻金屬板11的單面，使用銅-銀二元的 共晶合金所成的焊材12，在氫氣環境爐內以峰値溫度850 °C焊接銅板1 3。 在此，電阻金屬板11是使用例如厚約0.5 mm的合金板 體，焊材12是使用例如厚度0.05 mm的BAg-8，銅板13是使 用例如厚度0.2 mm的無氧銅板，而這些都使用縱500 mm左 -10- 200949866 右、橫200 mm左右者。 作爲電阻金屬板11使用含有90重量％以上銅的合金板 體，而作爲電極的銅板13使用無氧銅板，由此這些電阻金 屬板11與銅板13，是膨脹係數成爲大約相同，而可防止發 生焊接時的彎曲。相反地，使用銅含有率不是9 0%的合金 時，例如，在錳銅（Cu 85%，Μη 12%，Ni 2%，Fe 1%) 的合金板，焊接作爲電極的銅板時，彎曲會變大之故，因 ❹ 而在本發明中，使用銅含有率爲9 0%以上的合金板體較佳 〇 又，使用銅·銀二元的共晶合金所成的焊材12之故， 因而電阻金屬板11與銅板13是歐姆接觸，成爲可將作爲電 極的銅板1 3附近的電阻抑制成極低。 在電阻金屬板11的單面焊接銅板13之後，利用以氫氧 化鈉、矽酸鈉作爲主成分的溶液進行鹼脫脂，以除去附著 於金屬表面的油脂分，之後，浸漬於稀硫酸的水溶液中以 ® 除去氧化膜。除去氧化膜之後，在銅板13的全面利用電鍍 法形成厚約5/zm的鍍錫膜14。 藉由實施如以上的工程，如第3 (a)圖所示地，在電 阻金屬板11的單面以焊材12接合著銅板13，而在該銅板13 上形成有鍍錫膜14所形成的集合複層板體20。集合複層板 體20是例如被形成縱500 mm左右，橫200 mm左右，厚度 1.0 mm左右。 然後’以如第3(a)圖的虛線21所示地，以所定寬度 W1薄長方形狀地切斷集合複層板體20而形成薄長方形狀 200949866 複層板體22。該薄長方形狀複層板體22的切斷寬度W1 ( 短邊的長度W1)，是成爲擬製造的電阻金屬板低電阻晶 片電阻器10的長度的部位之故，因而在此被設定在13 mm ’又，長邊的長度是例如成爲500 mm左右。 然後，如第3(c)圖所示地，以寬度W2例如寬度4 mm朝長邊方向切削薄長方形狀複層板體22的短邊方向的 大約中央。在該切削加工中，從形成有鍍錫膜14的單面， 除去鍍錫膜14、銅板13、焊材12、及焊材12與電阻金屬板 ❿ 11的擴散層爲止而形成凹部15。 又，如第3(d)圖所示地，焊材12與電阻金屬板1 1的 擴散層23，是從鍍錫膜14的表面削掉大約dl =0.3 mm左右 的深度爲止，而將凹部15的電阻金屬板11作成大約 d2 = 0.4 6 mm左右的厚度，確實地除去擴散層23。 如第3 (c)圖所示地，若在薄長方形狀複層板體22的 單面，短邊方向的大約中央形成朝長邊方向延長的凹部15 ，則在該凹部15的底面，亦即，露出電阻金屬板11的一面 〇 ’如第3 (e)圖所示地形成保護膜16。保護膜16是利用含 有聚矽氧耦合劑或二氧化矽的無機-有機複合材料的聚醯 胺醯亞胺所形成。形成保護膜16之後，如第3 ( e )圖的兩 點鏈線24所示地，若以所定長度（在此爲6.3 mm)切斷薄 長方形狀複層板體22，則完成電阻金屬板低電阻晶片電阻 器10。 利用實施如以上的工程，則成爲可製造電阻値爲不足 1.0 ιηΩ而具有高信賴性的電阻金屬板低電阻晶片電阻器 -12- 200949866 1 0 〇 以下，針對於電阻金屬板低電阻晶片電阻器30的製造 方法，參照第2圖及第4圖加以說明。 例如，擬製造長度13 mm，寬度6.3 mm的電阻金屬板 低電阻晶片電阻器30時，最初，在含有90重量％以上銅的 合金板體所成的電阻金屬板31的兩面，使用銅-銀二元的 共晶合金所成的焊材32、32，在氫氣環境爐內以峰値溫度 © 8 5 0 °C焊接銅板3 3、3 3。 ' 在此，電阻金屬板31是使用例如厚約0.5 mm的合金板 體，焊材32是使用例如厚度0.05 mm的BAg-8，銅板33是使 用例如厚度0.2 mm的無氧銅板，而這些都使用縱500 mm左 右，橫200 mm左右者。 之後，利用以氫氧化鈉、矽酸鈉作爲主成分的溶液進 行鹼脫脂，以除去附著於金屬表面的油脂分，浸漬於稀硫 酸的水溶液中以除去氧化膜。其後，在被固著於電阻金屬 ® 板31兩面的銅板33、33的全面利用電鍍法分別形成厚約5 // m的鍍錫膜34、34。 經由如以上的工程，如第4 ( a )圖所示地，在電阻金 屬板31的兩面以焊材32、32接合著銅板33、33，而在此些 銅板33、33上分別形成有鍍錫膜34、3 4所形成的集合複層 板體40。集合複層板體40是例如被形成縱5 00 mm左右，橫 200 mm左右，厚度1.0 mm左右。 然後，以如第4(a)圖的虛線41所示地，以所定寬度 W3薄長方形狀地切斷集合複層板體40而形成薄長方形狀 -13- 200949866 複層板體42。該薄長方形狀複層板體42的切斷寬度W3 ( 短邊的長度W3)，是成爲擬製造的電阻金屬板低電阻晶 片電阻器30的長度的部位之故，因而在此被設定在13 mm ，又，長邊的長度是例如成爲500 mm左右。 然後，如第4 ( c )圖所示地，以寬度W4例如寬度4 mm朝長邊方向分別切削從薄長方形狀複層板體42的兩面 的短邊方向的大約中央。在該薄長方形狀複層板體42的兩 面的該切削加工中，從形成有鍍錫膜34、3 4的兩面，除去 鍍錫膜34、34、銅板33、33、焊材32、32、及焊材32、32 與電阻金屬板31的擴散層44爲止而形成凹部35、35。 又，如第4(d)圖所示地，焊材32與電阻金屬板31的 擴散層43，是從鍍錫膜34、34的兩面削掉大約d3=0.3 mm 左右的深度爲止，而將凹部35、35的電阻金靥板31作成大 約d4 = 0.4 mm左右的厚度，確實地除去擴散層44。 如第4(c)圖所示地，若在薄長方形狀複層板體42的 兩面的短邊方向的大約中央形成朝長邊方向延長的凹部35 、35，則在凹部35、35的各該底面，亦即，露出電阻金屬 板31的兩面，利用聚醯胺醯亞胺等形成保護膜36、36。形 成保護膜16之後，如第4(e)圖的兩點鏈線45所示地，若 以所定長度（在此爲6.3 mm)切斷薄長方形狀複層板體42 ，則完成電阻金屬板低電阻晶片電阻器3 0。利用實施如以 上的工程，則成爲可製造電阻値爲不足1.0 ηιΩ而具有高 信賴性的電阻金屬板低電阻晶片電阻器30。 以下，第5圖是表示依本發明的電阻金屬板低電阻晶 -14 - 200949866 片電阻器1 〇與比較例的各溫度的電阻溫度係數（TCR )的 圖表，而倂記於第5圖的凡例的電阻値是在室溫25 °C的電 阻値。 在此，樣品A是作爲焊材使用BCuP-3，爲被形成在 d2 = 0.3 9 mm的厚度的電阻金屬板低電阻晶片電阻器，在室 溫25°C表示0.61 ηιΩ。BCuP-3是被規定於JIS. Z. 3264的焊 材，含有6%磷（P )，含有5%銀（Ag )，含有89%銅（Cu ❹ ）。 樣品B是作爲焊材使用BAg-8，爲被形成在d2 = 0.41 mm的厚度的電阻金屬板低電阻晶片電阻器，在室溫25 °C 表示0.56 ηιΩ。BAg-8是被規定於JIS· Ζ· 3261的焊材，含 有 72%銀（Ag);含有 28%銅（Cu)。 樣品C是作爲焊材使用P-Cu系者，爲被形成在d = 0.39 mm的厚度的電阻金屬板低電阻晶片電阻器，在室溫25 °C 表示0.68 πιΩ。P-Cu系的焊材，是主要僅含有磷（P)及 © 銅（Cu)者。 樣品A、C是d = 0.39 mm，而樣品B是d2 = 0.41 mm，此 些厚度是大約相同之故，因而仍比較此些樣品A、B、C的 TCR及電阻値，則可知作爲焊材使用銅-銀二元合金所成的 BAg-8的樣品B的電阻値在室溫25°C最低，而TCR也大致成 爲較小。 【圖式簡單說明】 第1圖是表示本發明的一實施形態的立體圖。 -15- 200949866 第2圖是表示與第1圖不同的實施形態的立體圖。 第3 (a)圖至第3(e)圖是表示製造第1圖的電阻金屬 板低電阻晶片電阻器的各工程的圖式。 第4(a)圖至第4(e)圖是表示製造第2圖的電阻金屬 板低電阻晶片電阻器的各工程的圖式。 第5圖是表示依本發明的電阻金屬板低電阻晶片電阻器 的各溫度的電阻溫度係數的圖表，併記於凡例的電阻値是室 溫25°C的電阻値。 【主要元件符號說明】 電阻金屬板低電阻晶片電阻器，11:電阻金屬板 ’ 12:焊材，13:銅板，14:鍍錫膜，15:凹部，16:保 護膜’ 20:集合複層板體，22:薄長方形狀複層板體，23 :擴散層’ 3 0 :電阻金靥板低電阻晶片電阻器，3 1 :電阻 金屬板’ 32:焊材，33:銅板，34:鍍錫膜，35:凹部， 36:保護膜，40:集合複層板體，42:薄長方形狀複層板 體，43 :擴散層。 16 -An alloy of Sn and Ge. Further, the welding materials 12 and 32 are a welding material made of a copper-silver binary eutectic alloy, and for example, silver welding specified as _BAg-8 in JIS.Z.3261 can be used. BAg-8 is a silver weld containing 72% Ag, 28% Cu, and the melting temperature is 780 °C for both the solidus and liquidus. The above protective films 16, 36 are formed of polyamidoximine which may be an inorganic-organic composite material containing a polyfluorene couplant or cerium oxide. Hereinafter, a method of manufacturing the resistive metal plate low-resistance chip resistor 10 of Fig. 1 will be described with reference to Figs. 1 and 3 . For example, when a resistance metal plate low-resistance chip resistor 10 having a length of 13 mm and a width of 6.3 mm is to be produced, initially, copper is used on one side of the resistance metal plate 11 formed of an alloy plate body containing 90% by weight or more of copper. A solder material 12 made of a silver binary eutectic alloy is welded to the copper plate 13 at a peak temperature of 850 ° C in a hydrogen atmosphere furnace. Here, the resistance metal plate 11 is, for example, an alloy plate body having a thickness of about 0.5 mm, the welding material 12 is made of, for example, BAg-8 having a thickness of 0.05 mm, and the copper plate 13 is made of, for example, an oxygen-free copper plate having a thickness of 0.2 mm, and these are used. Vertical 500 mm left-10-200949866 Right, horizontal 200 mm or so. An alloy plate body containing 90% by weight or more of copper is used as the electric resistance metal plate 11, and an oxygen-free copper plate is used as the copper plate 13 as an electrode, whereby the resistance metal plates 11 and the copper plate 13 have expansion coefficients of about the same, and can be prevented from occurring. Bending during welding. Conversely, when an alloy having a copper content of not 90% is used, for example, in an alloy plate of manganese copper (Cu 85%, Μη 12%, Ni 2%, Fe 1%), when bending a copper plate as an electrode, bending In the present invention, it is preferable to use an alloy plate body having a copper content of 90% or more, and a consumable material 12 made of a copper-silver binary eutectic alloy. The resistive metal plate 11 is in ohmic contact with the copper plate 13, so that the electric resistance in the vicinity of the copper plate 13 as an electrode can be suppressed to be extremely low. After the copper plate 13 is welded on one side of the electric resistance metal plate 11, the solution is degreased by a solution containing sodium hydroxide or sodium citrate as a main component to remove the fat and oil adhering to the metal surface, and then immersed in an aqueous solution of dilute sulfuric acid. Remove the oxide film with ®. After the oxide film is removed, a tin plating film 14 having a thickness of about 5/zm is formed on the entire surface of the copper plate 13 by electroplating. By performing the above-described process, as shown in Fig. 3(a), the copper plate 13 is joined to the single surface of the resistive metal plate 11 by the solder material 12, and the tin plating film 14 is formed on the copper plate 13. The collection of the multi-layered board 20 . The aggregated laminated body 20 is formed, for example, to have a length of about 500 mm, a width of about 200 mm, and a thickness of about 1.0 mm. Then, as shown by a broken line 21 in Fig. 3(a), the laminated plate body 20 is cut into a thin rectangular shape with a predetermined width W1 to form a thin rectangular shape 200949866 multi-layered plate body 22. The cut width W1 (the length W1 of the short side) of the thin rectangular laminated body 22 is a portion which becomes the length of the resistive metal plate low-resistance chip resistor 10 to be manufactured, and is therefore set here at 13. Mm 'again, the length of the long side is, for example, about 500 mm. Then, as shown in Fig. 3(c), about the center of the short side direction of the thin rectangular composite sheet body 22 is cut in the longitudinal direction by the width W2, for example, the width of 4 mm. In this cutting process, the concave portion 15 is formed from the single surface on which the tin-plated film 14 is formed, and the tin plating film 14, the copper plate 13, the solder material 12, and the diffusion layer of the solder material 12 and the resistive metal plate 11 are removed. Further, as shown in Fig. 3(d), the diffusion layer 23 of the welding material 12 and the electric resistance metal plate 1 is cut from the surface of the tin plating film 14 by a depth of about dl = 0.3 mm, and the concave portion is formed. The resistive metal plate 11 of 15 is formed to have a thickness of about d2 = 0.46 mm, and the diffusion layer 23 is surely removed. As shown in Fig. 3(c), when a concave portion 15 extending in the longitudinal direction is formed on a single side of the thin rectangular laminated plate body 22 in the short-side direction, the bottom surface of the concave portion 15 is also That is, the protective film 16 is formed as shown in Fig. 3(e) by exposing the one surface 〇' of the resistive metal plate 11. The protective film 16 is formed of a polyamidoximine which is an inorganic-organic composite material containing a polyfluorene couplant or cerium oxide. After the protective film 16 is formed, as shown by the two-dot chain line 24 of Fig. 3(e), if the thin rectangular laminated body 22 is cut at a predetermined length (here, 6.3 mm), the resistive metal plate is completed. Low resistance wafer resistor 10. By performing the above-mentioned engineering, it is a resistor metal plate low-resistance chip resistor which can be manufactured with a resistance 値 of less than 1.0 ηηΩ and has high reliability. -12- 200949866 1 0 〇Following, for a resistance metal plate low resistance chip resistor The manufacturing method of 30 is demonstrated with reference to FIG. 2 and FIG. For example, when a resistance metal plate low-resistance chip resistor 30 having a length of 13 mm and a width of 6.3 mm is to be produced, initially, copper-silver two are used on both sides of the resistance metal plate 31 formed of an alloy plate body containing 90% by weight or more of copper. The welding consumables 32 and 32 formed by the eutectic alloy were welded to the copper plates 3 3 and 3 3 at a peak temperature of 850 ° C in a hydrogen atmosphere furnace. Here, the resistance metal plate 31 is, for example, an alloy plate body having a thickness of about 0.5 mm, the welding material 32 is made of, for example, BAg-8 having a thickness of 0.05 mm, and the copper plate 33 is made of, for example, an oxygen-free copper plate having a thickness of 0.2 mm, and these are Use about 500 mm in length and 200 mm in width. Thereafter, the solution is degreased by a solution containing sodium hydroxide or sodium citrate as a main component to remove the fat and oil adhering to the metal surface, and immersed in an aqueous solution of dilute sulfuric acid to remove the oxide film. Thereafter, the tin plating films 34 and 34 having a thickness of about 5 // m are formed by the plating method on the copper plates 33 and 33 fixed to both surfaces of the resistance metal plate 31, respectively. Through the above engineering, as shown in Fig. 4(a), the copper plates 33, 33 are joined to the both sides of the resistive metal plate 31 by the welding materials 32, 32, and plating is formed on the copper plates 33, 33, respectively. The laminated composite body 40 formed by the tin films 34 and 34. The aggregated laminated body 40 is formed, for example, to have a length of about 500 mm, a width of about 200 mm, and a thickness of about 1.0 mm. Then, as shown by a broken line 41 in Fig. 4(a), the laminated plate body 40 is cut into a thin rectangular shape with a predetermined width W3 to form a thin rectangular plate-13-200949866 multi-layered plate body 42. The cut width W3 (the length W3 of the short side) of the thin rectangular laminated body 42 is a portion which becomes the length of the resistive metal plate low-resistance chip resistor 30 to be manufactured, and is therefore set here at 13. Mm, in addition, the length of the long side is, for example, about 500 mm. Then, as shown in Fig. 4(c), about the center of the short side direction of both surfaces of the thin rectangular laminated plate body 42 is cut in the longitudinal direction by the width W4, for example, the width 4 mm. In the cutting process on both surfaces of the thin rectangular laminated plate body 42, the tin-plated films 34 and 34, the copper plates 33 and 33, the consumables 32 and 32 are removed from both surfaces on which the tin-plated films 34 and 34 are formed. The concave portions 35 and 35 are formed up to the welding materials 32 and 32 and the diffusion layer 44 of the electric resistance metal plate 31. Further, as shown in Fig. 4(d), the diffusion layer 43 of the welding material 32 and the electric resistance metal plate 31 is cut away from both surfaces of the tin plating films 34 and 34 by a depth of about d3 = 0.3 mm. The resistance metal plate 31 of the recesses 35 and 35 is formed to have a thickness of about d4 = 0.4 mm, and the diffusion layer 44 is surely removed. As shown in Fig. 4(c), when concave portions 35 and 35 extending in the longitudinal direction are formed at approximately the center in the short-side direction of both surfaces of the thin rectangular laminated plate body 42, the concave portions 35 and 35 are formed. The bottom surface, that is, the both surfaces of the resistive metal plate 31 are exposed, and the protective films 36 and 36 are formed by polyimide or the like. After the protective film 16 is formed, as shown by the two-dot chain line 45 of Fig. 4(e), if the thin rectangular laminated body 42 is cut at a predetermined length (here, 6.3 mm), the resistive metal plate is completed. Low resistance chip resistor 30. By performing the above-described engineering, it is possible to manufacture a resistive metal plate low-resistance chip resistor 30 having a high reliability of a resistance 値 of less than 1.0 ηιΩ. Hereinafter, Fig. 5 is a graph showing the temperature coefficient of resistance (TCR) of each temperature of the resistance metal plate low resistance crystal-14 - 200949866 sheet resistor 1 〇 and the comparative example according to the present invention, and is described in Fig. 5 The resistance 値 of the example is the resistance 25 at room temperature of 25 °C. Here, Sample A used BCuP-3 as a solder material, and was a resistive metal plate low-resistance chip resistor formed to have a thickness of d2 = 0.39 mm, and expressed 0.61 ηιΩ at a room temperature of 25 °C. BCuP-3 is a solder material specified in JIS. Z. 3264, containing 6% phosphorus (P), containing 5% silver (Ag), and containing 89% copper (Cu ❹ ). Sample B was used as a solder material with BAg-8 as a resistive metal plate low-resistance chip resistor formed at a thickness of d2 = 0.41 mm, representing 0.56 ηιΩ at room temperature 25 °C. BAg-8 is a consumable material specified for JIS·Ζ·3261, containing 72% silver (Ag); and containing 28% copper (Cu). Sample C was a P-Cu system using a resistive material, and was a resistive metal plate low-resistance chip resistor formed to have a thickness of d = 0.39 mm, and expressed 0.68 πιΩ at room temperature of 25 °C. The P-Cu based welding consumables are mainly composed of only phosphorus (P) and © copper (Cu). Samples A and C are d = 0.39 mm, and sample B is d2 = 0.41 mm. These thicknesses are about the same. Therefore, the TCR and resistance 値 of these samples A, B, and C are still compared. The resistance 値 of sample B of BAg-8 formed using a copper-silver binary alloy was lowest at room temperature of 25 ° C, and the TCR was also substantially smaller. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing an embodiment of the present invention. -15- 200949866 Fig. 2 is a perspective view showing an embodiment different from Fig. 1. Figs. 3(a) to 3(e) are diagrams showing respective processes for manufacturing the resistor metal plate low resistance chip resistor of Fig. 1. 4(a) to 4(e) are views showing the respective processes of manufacturing the resistance metal plate low resistance chip resistor of Fig. 2. Fig. 5 is a graph showing the temperature coefficient of resistance of each temperature of the resistance metal plate low-resistance chip resistor according to the present invention, and the resistance 値 of the example is a resistance 室 at a room temperature of 25 °C. [Main component symbol description] Resistive metal plate low resistance chip resistor, 11: Resistive metal plate '12: welding consumables, 13: copper plate, 14: tin plated film, 15: recessed portion, 16: protective film '20: assembly layer Plate, 22: Thin rectangular composite plate, 23: Diffusion layer ' 3 0 : Resistance gold plate low resistance chip resistor, 3 1 : Resistance metal plate ' 32: Welding consumables, 33: Copper plate, 34: Plated Tin film, 35: recess, 36: protective film, 40: assembled multi-layered plate, 42: thin rectangular laminated plate, 43: diffusion layer. 16 -