TW200947672A - Reservoir capacitor and semiconductor memory device including the same - Google Patents

Reservoir capacitor and semiconductor memory device including the same Download PDF

Info

Publication number
TW200947672A
TW200947672A TW098102092A TW98102092A TW200947672A TW 200947672 A TW200947672 A TW 200947672A TW 098102092 A TW098102092 A TW 098102092A TW 98102092 A TW98102092 A TW 98102092A TW 200947672 A TW200947672 A TW 200947672A
Authority
TW
Taiwan
Prior art keywords
capacitor
electrode
power supply
dielectric
supply unit
Prior art date
Application number
TW098102092A
Other languages
English (en)
Chinese (zh)
Inventor
Kun-Woo Park
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200947672A publication Critical patent/TW200947672A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
TW098102092A 2008-03-21 2009-01-20 Reservoir capacitor and semiconductor memory device including the same TW200947672A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20080026342 2008-03-21
KR1020080117999A KR101128982B1 (ko) 2008-03-21 2008-11-26 레저바 캐패시터 및 그를 갖는 반도체 메모리 장치

Publications (1)

Publication Number Publication Date
TW200947672A true TW200947672A (en) 2009-11-16

Family

ID=41123333

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098102092A TW200947672A (en) 2008-03-21 2009-01-20 Reservoir capacitor and semiconductor memory device including the same

Country Status (3)

Country Link
KR (2) KR101128982B1 (ko)
CN (2) CN102354523A (ko)
TW (1) TW200947672A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101872632B1 (ko) 2014-06-09 2018-08-02 사빅 글로벌 테크놀러지스 비.브이. 펄스 전자기 복사선을 이용한 박막 유기 강유전 물질의 제조방법
CN110741473B (zh) * 2019-09-03 2021-04-16 长江存储科技有限责任公司 利用虚设存储块作为池电容器的非易失性存储器件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920008886B1 (ko) * 1989-05-10 1992-10-10 삼성전자 주식회사 디램셀 및 그 제조방법
KR930007194B1 (ko) * 1990-08-14 1993-07-31 삼성전자 주식회사 반도체 장치 및 그 제조방법
JP3085280B2 (ja) * 1998-05-15 2000-09-04 日本電気株式会社 多値ｄｒａｍ半導体装置
CN2368148Y (zh) * 1999-04-01 2000-03-08 石家庄开发区高达科技开发有限公司 超大容量电容器
KR100647384B1 (ko) * 2000-06-30 2006-11-17 주식회사 하이닉스반도체 반도체 메모리 소자의 레저봐 커패시턴스 조절 장치
EP1641099A1 (en) * 2004-09-24 2006-03-29 Conception et Développement Michelin S.A. Detachable charge control circuit for balancing the voltage of supercapacitors connected in series

Also Published As

Publication number Publication date
KR101128982B1 (ko) 2012-03-23
CN101540194B (zh) 2012-12-12
CN101540194A (zh) 2009-09-23
CN102354523A (zh) 2012-02-15
KR20090101063A (ko) 2009-09-24
KR20110103374A (ko) 2011-09-20

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