TW200944570A - Adhesive tape for processing electronic parts - Google Patents
Adhesive tape for processing electronic parts Download PDFInfo
- Publication number
- TW200944570A TW200944570A TW098103388A TW98103388A TW200944570A TW 200944570 A TW200944570 A TW 200944570A TW 098103388 A TW098103388 A TW 098103388A TW 98103388 A TW98103388 A TW 98103388A TW 200944570 A TW200944570 A TW 200944570A
- Authority
- TW
- Taiwan
- Prior art keywords
- adhesive
- adhesive tape
- layer
- group
- processing
- Prior art date
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- 239000002390 adhesive tape Substances 0.000 title claims abstract description 56
- 238000012545 processing Methods 0.000 title claims abstract description 34
- 239000010410 layer Substances 0.000 claims abstract description 60
- 239000012790 adhesive layer Substances 0.000 claims abstract description 47
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 30
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims abstract description 17
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 14
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Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Description
200944570 六、發明說明: 【發明所屬之技街領域】 面 本發明係有關於-種具有帶電防止性能且接觸金屬叫 亦不發生腐敵電子零件加^黏著㈣,糾是有關於 一種在生產硬碟的零件時所使用之黏著膠帶。 C先前技j
迄今,已知有為了在生產硬碟用零件、電氣電子零件、 及半導體零件時,研磨步驟、分割步驟或其他步驟等之中 以固定或保護零件之目的而使用之黏著耀帶。如此黏著膠 U)帶’係諸如在基材薄膜設有再剝離性之丙稀酸系黏著劑層 者、及設有在貼附時對外力具有抗拒性強但剝離時用小的 力道即可剝離之光交聯型再剝離性黏著劑層者。該黏著膝 帶係-到預定之處理步驟結束時即被剝離,但此時在零件 與黏著膠帶之間產生被稱為剝離帶電之靜電。為了抑制因 I5該靜電對於料體(例如電料)所造成之不良影響,乃使用 有(a)對基材薄膜之背面側實施帶電防止處理之黏著膠帶; 或(b)在基材薄膜與黏著劑層之間設置帶電防止中間層之黏 著膠帶(如參考專利文獻〇 ;進而⑷朝黏著劑層添加混合帶 電防止劑之黏著膠帶(如參考專利文獻2、3、4)。 2〇專利文獻1 :曰本發明專利申請案公開公報第2004-189769號 專利文獻2 .曰本發明專利申請案公開公報第^號 專利文獻3 .曰本發明專利申請案公開公報第2〇〇5_314476號 專利文獻4 ’曰本發明專利申請案公開公報第2〇〇6 152235號 惟’用以形成電路之零件之基板係陶瓷或玻璃等之絕 200944570 緣材料時,靜電的產生量很大,且衰減所花的時間多。即 使對如此零件使用前述黏著膠帶,帶電防止效果亦不算充 分,致使電路被破壞之危險性很大。為此,在上述零件之 生產步驟中,更使用有諸如電離器等之靜電移除裝置者乃 5 為實情。 但是,就算如上之對策,仍無法得到足夠的帶電防止 效果,生產性低,又,覆著體之保護亦不能說是足夠的。 又,如前述之(b),揭示一種半導體固定用黏著膠帶, 其係於基材薄膜與黏著劑層之間設置含有氮原子一硼原子 10 配位體構造之電荷移動型硼聚合物之帶電防止層,不會造 成因黏著劑之對覆著體所造成之污染或因黏著物性之歷時 變化所造成之可靠性降低,且能附與帶電防止功能者。此 膠帶雖可獲得相當程度之效果,但依濕度而使帶電防止性 產生大幅度的變化,依情況而定,對於基材薄膜與帶電防 15 止層間之密著性造成問題,期盼能獲得改善。 又,用以防止黏著膠帶之剝離帶電之處理,認為是在 黏著劑側實施比基材薄膜側實施更具效果。惟,如前述之 (C),在黏著劑本體添加如界面活性劑、導電性填料及碳黑 般具有帶電防止效果之材料時,黏著劑之物性就改變,使 20 黏著物性或及歷時變化的調整或抑制變得困難。進而,剝 離黏著膠帶時,黏著劑或所添加之帶電防止材料本身移轉 到覆著體,有使覆著體受到污染之疑慮衍生。此時,在覆 著體之表面上發生可目視之殘膠或顯微鏡位準之微粒狀物 的附著、或光學上不能觀測之液狀物之附著,對於以後的 200944570 製程中造成零件之接著不良等之不良影響。 進而,在硬碟之磁頭加工時,被要求具有比通常的半 導體加工更南之帶電防止性能。又’磁頭係重豐有極薄之 薄膜式之金屬層,且使用有純銅等,因此很容易被腐蝕, 5 迄今對於膠帶,要求著高而ί腐餘性。以同時解決腐触及靜 電破壞之方法而言,如前述,嘗試使用離子性液體、金屬 鹽系之帶電防止劑者。惟,對於一般電子零件是可以解決, 但因為磁頭極易被腐蝕,所以必須極力減少離子性物質。 〇 離子性雜質中,又以鹵素離子尤被人嫌棄,迄今藉將該鹵 10 素離子極力減少,以降低不良率。惟,隨著磁頭的高性能 化,因為黏著劑之主成分之高分子鏈之官能基,亦引發腐 蝕,光只是將鹵素離子減少的話,對於腐蝕的防止,尚嫌 不足。 【發明内容3 15 本發明係有鑑於前述之問題點而所創建成者,其目的 係於提供一種電子零件加工用黏著膠帶,其覆著體之污染 ® 或黏著物性之歷時變化少,且帶電防止性能高,在進行硬 碟零件之磁頭的加工時亦不引發腐蝕者。 本發明人乃為了達成上述目的而經精心檢討後,結果 20 發現以下知見,即:在一種包含有基材薄膜及黏著劑層之 黏著膠帶中,在基材薄膜之一面或兩面形成有帶電防止 層,前述黏著劑層係以丙烯酸系共聚物為主成分,該丙烯 酸系共聚物係一對於主鏈至少分別具有含幅射線固化性碳 一碳雙鍵之基、氫氧基、及含羧基之基者,前述丙烯酸系 200944570 共聚物之主鍵之含幅射線固化性碳〜碳雙鍵之基的比例為 0.5-2.0meq/g,前述丙烯I系共聚物之主鏈之氫氧基的比例 為0.1-60mgKOH/g,前述丙烯酸系共聚物之主鏈之羧基的 比例為0.5-H)mgK〇H/g,前述丙稀酸系共聚物之凝膠分率 5為60%以上時’可同時解*腐料靜電破壞雙方之問題 者,根據該知見’終完成本發明。 即’本發明係提供以下各項電子零件加工用黏著膠 帶,即: ⑴-種電子零件加工用黏著膠帶’係用以貼著含有金屬或 10氧化銘之電子零件者’包含有:基材;及形成在前述基材 之一面之黏著劑層,前述黏著劑層係以丙烯酸系共聚物作 為主成分’該丙烯酸系共聚物係一對於主鏈至少分別具有 含幅射線固化性碳一碳雙鍵之基、氫氧基、及含叛基之基 者’前述丙烯酸系共聚物之主鏈之含幅射線固化性碳—碳 15 雙鍵之基的比例為0.5-2.Omeq/g ’前述丙烯酸系共聚物之主 鏈之氫氧基的比例為0· 1 -60mgKOH/g,前述丙稀酸系共聚 物之主鏈之緩基的比例為〇.5-10mgKOH/g,前述丙烯酸系 共聚物之凝膠分率為60%以上。 (2) 如前述第(1)項之電子零件加工用黏著膠帶,其中前述基 20 材具有形成於兩面或一面之帶電防止層。 (3) 如前述第(1)或(2)項之電子零件加工用黏著膠帶,其中前 述帶電防止層係π電子共軛系聚合物,又為聚吡咯系聚合 物或聚噻吩系聚合物更佳。 (4) 如前述第(1)至(3)項中任一項之電子零件加工用黏著膠 200944570 帶,其中前述帶電防止層之厚度為0.001-2.0/zm。 (5)如前述第(1)至(4)項中任一項之電子零件加工用黏著膠 帶,其中前述黏著劑層之厚度為l-70#m。 本說明書中,「作為主成分」意指,以黏著成分、固化 5 劑及聚合起始劑構成之黏著劑層之黏著成分的主成分分別 具有含碳一碳雙鍵之基、氫氧基、及羧基之丙烯酸系共聚 物者。本發明之黏著膠帶係以該黏著劑層之60重量%以上 分別具有含碳一碳雙鍵之基、氫氧基、及羧基之丙烯酸系 〇 共聚物構成者。 10 [發明之效果] 本發明之黏著膠帶之帶電防止性能極高,不使以純銅 之類的金屬或氧化鋁構成之磁頭腐蝕。進而,帶電防止層 與黏著劑層間之密著性優異,因此在半導體零件之切削或 晶圓背面研削處理中,對覆著體表面之影響很少,利用範 15 圍亦可擴大,對於半導體製品之製造良率之降低防止亦為 有效。又,在黏著劑層使用幅射線固化型聚合物,因此容 ® 胃進行再剝離。 [圖式簡單說明] 第1圖係本實施型態之黏著膠帶1之示意圖。 20 第2(a)-(c)圖係顯示本實施例之帶電防止層一黏著劑層 間之密著性之測定方法之圖。 【貧施方式3 以下,根據附圖,詳細說明本發明之實施型態。 針對本實施型態之黏著膠帶1進行說明。 200944570 第1圖係黏著膠帶1之刮面概略圖。在基材薄獏3的兩面 形成帶電防止層5,在一面的帶電防止層5之上形成黏著劑 層7。在黏著劑層7之上形成剝離襯墊9。 基材薄膜3係以保護來自加工半導體時之衝擊為主要 5目的者’對於具備水洗淨等之耐水性及加工零件之保持性 者尤為重要。因此基材薄膜3係以聚乙烯、聚丙烯及聚丁烯 般的聚稀烴、乙浠一乙酸乙烯共聚物、乙烯—(甲基)丙稀酸 共聚物及乙稀一(甲基)丙烯酸酯共聚物般之乙稀共聚物於 質聚氣乙烯、聚對苯二甲酸乙二酯、聚萘二曱酸乙二自旨、 10 半硬質聚氯乙烯、聚酯、聚胺酯、聚醯胺、聚醯亞胺、天 然橡膠以及合成橡膠等之高分子材料為佳。又,其等係作 為卓層薄膜或各自的複層薄膜而使用。 此外,基材薄膜3係以具有可見光透射性者為佳,且以 紫外線透射性者為佳。又,基材薄膜3之厚度並無特別之限 15 制,但宜為10-500" m,又為40-500//m更佳,且為8〇 25〇 βιη尤佳。 帶電防止層5係由導電性聚合物構成者。作為帶電防止 層5所使用之導電性聚合物,由帶電防止性能之觀點來看, 乃使用將分子構造中具有共軛雙鍵之單體聚合而形成之π 2〇電子共軛系聚合物為佳。以π電子共軛系聚合物而言,由 特別是帶電防止效果之歷時穩定性及非污染性良好之觀點 來看’是以聚吡略系聚合物及聚噻吩系聚合物最好使用。 又,較佳的是使用有聚吡咯系聚合物之帶電防止層。 設置帶電防止層5之方式,例如有藉塗覆形成薄獏之方 8 200944570 法(凹版印刷塗佈等);及使單體與基材薄膜表面接觸, 化劑存在下聚合之方法(浸絲合法)#。浸,絲合法係如日 本發明專利申請案公開公极第齡咖37號所示者,將基 材薄膜浸泡在於鱗、嗟吩或其等衍生物等之單體因應二 5電性加入無機酸、有機續酸等之播雜物、氧化聚㈣U 液中,使單體聚合,在基材薄膜表面直接析出導電性聚: 物’形成導電性聚合物層之方法4電防止層5之形成方法 係以將7T電子共軛系聚合物藉浸泡聚合法而形成者為佳/ 〇 糾聚合法係藉於基材薄膜3之表面直接進行帶電防 10止處理,可在不使用黏合劑之狀態下得到帶電防止效果。 為此,町防止由基材薄膜3對黏著劑層7所造成之低分子量 ' 成分及離子性雜質溶出之_,因此不使金屬腐麵。刀 進而詳述之’藉浸泡聚合形成帶電防止層5時,可將帶 電防土廣5形成極薄之薄膜者。又,在前述浸泡聚合物中, 15亦可選择味地/、對基材薄膜3之表面的凹凸面之凹部進行 聚合J此可在不改變基材薄膜3之表面的面狀態,财: ® #帶電#處理,所以業經帶電防止處理之基材薄膜3與點 著劑詹7之密著性極佳。 帶€防止層5之層厚’乃必須有效地發揮帶電防止性 20能,因冰矣少必須在0.謝_以上,在〇〇〇1_以下時, 使帶電#性能不足,因此〇顧_以上之膜厚為佳。惟, 層厚太# 0夺將對切削或晶圓的拾取時的性能造成很大的 影響,成為棘手的原因所在,因此層厚在2〇_以下者為 佳。又’,综合考慮帶電防止性能、基材與黏著劑間之密著 9 200944570 性及對膠帶之影響等,是以0.01/zm〜0·5//πι更值。 作為帶電防止層5時,係以π電子共軛系聚合物為值 尤其是在切削製程等辨識切割線等之時要求透明性時、 聚噻吩系聚合物尤佳。又,要求更高的帶電防土性能及养 5污染性時’以聚吡咯系聚合物特佳。 又’以聚吡咯系聚合物之帶電防止層之形成方法而 言,有一種將單體與基材薄膜表面接觸且在氧化劑存在下 使其聚合之方法(浸泡聚合法)。具體而言,例如日本發明專 利申請案公開公報第S62-275137號所示者,將基材薄膜浸 ® 10泡在於上述單體因應導電性加入無機酸、有機磺酸等之摻 雜物、氧化劑之溶液中,使單體聚合,在基材薄膜表面直 接析出導電性聚合物,形成導電性聚合物層之方法。如此, 藉於基材薄膜表面使導電性樹脂浸泡聚合,可防止有機性 雜質或離子性雜質朝黏著劑層之移轉(溶出),因此非污染性 15優異。以市售品之例而言,可舉ST POLY(Achilles公司製造) 等為例。 帶電防止層5之表面固有電阻值係以ιχι〇3ω/□〜1χ Ο 1〇13Ω/□為佳,且以 1χ1〇3Ω/□〜1χ10ι〇Ω/□更佳,又以 1χ 1〇4Ω/□〜1χ1〇8ω/□尤佳。 20 黏著劑層7係於帶電防止層5上塗佈幅射線硬化型之丙 烯酸系黏著劑或將其聚合物溶解於溶劑之物而得到者,或 塗佈後俟乾燥後而得到者。 黏著劑層7係以對於主鏈至少分別具有含幅射線固化 性碳一碳雙鍵之基、氫氧基、及含羧基之基之丙烯酸系共 10 200944570 5
10 15
聚物(以下稱為「丙烯酸系共聚物(A)」作為主成分。丙烯酸 系共聚物(A)係一種經由怎樣的方式製得之物皆可,例如藉 將以(甲基)丙烯酸酯、含羥基之不飽和化合物、含羧基之不 飽和化合物等所構成之共聚物(A1)之碳鏈為主鏈,且具有 可對共聚物(A1)所具有之官能基加成反應之官能基及含碳 —碳雙鍵之化合物(A2)加成反應而得到者。 上述之(甲基)丙烯酸酯乃可舉例有碳原子數6〜12之丙 烯酸己S旨、丙稀酸正辛醋、丙烯酸異辛醋、丙烯酸·2_乙基 己醋 '丙_十二烧醋、丙稀酸癸,或碳原子數5以下之 單體之丙烯酸戊酯、丙烯酸正丁_、丙烯酸異丁醋、丙烯 酸乙醋 '丙_甲醋,或者是與其等丙雜㈣樣之甲基 丙稀義。此時,以單體而言,使用碳原子數愈大之單體, 玻璃轉移點愈低,因此可製作所期望之玻璃轉移點者。又, 除了玻璃轉移料,為了提昇相溶性及各種性能之目的, 另可配合乙酸乙酯、苯乙烯、 内烯腈等具有碳-碳雙鍵之低 分子化合物,亦可做到5質量下之範_。 * 又,以含备基之不飽和化 匕合物之例子而言,可舉丙稀 酸-2-¾基乙醋、甲基丙稀酸j w 二包基乙酯、丙烯酸-2-羥基丙 酯、曱基丙烯酸-2-羥基丙酯等為例 以含絲之不飽和化合物^子而言,可舉丙稀酸、 甲基丙烯酸等為例。 前述具有可進行加成反應之官能基及碳 -碳雙鍵之化 合祕取官能基係於共聚物(Al)之官能基騎基或環狀 酸酐基時,可舉氫氧基、環氣基、異氰_基等為例,為 20 200944570 氫氧基時,可舉環狀酸酐基、異氰酸酯基等為例,為胺基 時,可舉異氰酸酯基等為例。以化合物(A2)之具體例而言, 可列舉有諸如:丙稀酸、甲基丙烯酸、肉桂酸、衣康酸、 富馬酸、苯二甲酸、丙烯酸-2-羥基烷酯類、甲基丙烯酸-2-5 羥基烷酯、單丙烯酸乙二酯類、單曱基丙烯酸乙二酯類、 N-羥甲基丙烯醯胺、N-羥甲基曱基丙烯醯胺、烯丙醇、丙 烯酸-N-烷胺酯類、丙烯酸-N-烷胺乙酯類、甲基丙烯酸-N-烷胺乙酯、丙烯醯胺類、甲基丙烯醯胺類、馬來酸酐、衣 康酸酐、富馬酸針、苯二甲酸酐、丙稀酸縮水甘油醋、甲 ⑬ 10 基丙烯酸縮水甘油醋、烯丙縮水甘油醚、將聚異氰酸S旨化 合物之異氰酸酯基之一部分以具有氫氧基或羧基及光聚合 性碳-碳雙鍵之單體聚胺酯化者等等。 — 在上述丙烯酸系共聚物(A)之合成上,共聚合係以溶液 聚合時之有機溶劑乃可使用曱酮系、酯系、醇系、芳香族 15 系者,但其中又以曱苯、乙酸乙酯、異丙醇、苯甲基溶纖 劑、乙基溶纖劑、丙酮、丁酮等之一般是丙烯酸系聚合物 之良好溶劑,且沸點60〜120°C之溶劑為佳。以聚合起始劑 〇 而言,通常是使用α,α ’一偶氮雙異丁腈等之偶氮雙系、過 氧化苯甲醯等之有機過氧化物之自由基產生劑。此時,因 20 應必要,亦可並用觸媒、聚合禁止劑,調節聚合溫度及聚 合時間,之後,進行官能基之加成反應,可得到所望分子 量之丙烯酸系共聚物(Α)。又,有關於調節分子量,宜使用 硫醇、四氯化碳系之溶劑。此共聚不只限定於溶液聚合, 塊狀聚合、懸浮聚合等其他方法亦無妨。 12 200944570 如上進行後,可得到丙烯酸系共聚物(A),但本發明 中’丙烯酸系共聚物(A)之重量平均分子量係3〇萬〜ι〇〇萬程 度為佳。在不到30萬時,幅射線照射之凝聚力變小,在切 削晶圓時,容易產生元件的偏移,使影像辨識變得困難。 5又,為了極力防止此元件的偏移,分子量係40萬以上為佳。 分子量超過1〇〇萬時,在合成時及塗佈時有凝膠化之可能 性,因此不佳。此外,由特性面來看,玻璃轉移點低,因 此分子量即使變大,不是圖案狀照射而是對整體照射幅射 〇 線時’經幅射線照射後之黏著劑之流動性並未充分,因此 10 延伸後之元件間隔不夠,雖然沒有拾取時之影像辨識困難 之問題發生’但還是9〇萬以下為佳。此外,本發明之分子 里係聚本乙稀換算之重量平均分子量。 ' 又’在本發明中,丙烯酸系共聚物(A)之光聚合性碳一 碳雙鍵之導入量只要是具有在幅射線固化後可得到足夠的 15 黏著力之降低效果之量即可,雖依UV照射量等之使用條件 等有異’非單一意思,但較佳的是0.5〜2.0meq/g,更佳的是 ® 〇·8〜1.5meq/g。雙鍵量太少時,幅射線照射後之黏著力之降 低效果變小,雙鍵量太多時,幅射線照射後之黏著劑之流 動性並未充分,因此延伸後之元件間隔不夠’在拾取時影 2〇像辨識會有困難。進而,丙烯酸系共聚物(A)此物欠缺安定 性,製造有所困難。 在本發明中,黏著劑層7之凝膠分率係依丙烯酸系共聚 物(A)之平均分子量、固化劑配合量而玎調整,但凝膠分率 係以60%以上為佳,8〇%以上更佳。凝膠分率太小時,黏著 13 200944570 劑成分只在接著界面容易流動,難以得到剝離力之歷時安 定性。 一進而,丙烯酸系共聚物對於主鏈具有未反應之氫 氧基及含㈣基之基者。丙賴彡共聚物(A)係具有氫氧基 5值成為0.1〜60mgKOH/g般之氫氧基時,可減少對氧化紹等 金屬腐蚀之危險性,因此為佳。氫氧基值為2〇〜56mgK〇H/g 時更佳。這疋因為氫氧基值太低時,交聯不足使產生殘 膠等之可能性變尚,氫氧基值太高時,則使氧化鋁等之金 屬腐蝕之可能性變高之緣故。又,丙烯酸系共聚物(A)係具 〇 1〇有酸值成為0.5〜10mgKOH/g般之羧基時,可減少對純銅或 鋼氧化物等之金屬腐姓之危險性,因此為佳。酸值為1〇〜 7.〇mgKOH/g時更佳。又,氫氧基值及酸值之值愈低,愈無 腐蝕,但會變成作為黏著劑時不具理想的特性。又,其等 1 s能基係置入固化劑等之交聯劑之前或置入之後,都具有 15 腐蝕防止之效果。 例如,用於運用氧化鋁之元件等之加工時,並無特別 鸹要咿電防止性能時,無須設置帶電防止層5,以對於主鏈 ❹ 至少各具有含幅射線固化性碳〜碳雙鍵之基、氫氧基、及 )〇含有羧基之基之丙烯酸系共聚物為主成分,只要在上述範 園内’即可解決氧化鋁之腐蝕。 又,本發明所使用之幅射線固化性黏著劑層7藉紫外線 照射而固化時,有必要時,對於作為副成分可採用光聚合 起始劑,例如異丙基安息香醚、異丁基安息香醚、苯甲酮、 米希勒酮、氣噻噸酮、十二烷基噻噸酮、二甲基噻噸酮、 14 200944570 5 Ο 10 15 Φ 基二甲基誠基環己基苯酮、 對於丙歸酸等。其等光聚合起始劑之配合量係相 系聚合物励質量份’以⑽1〜5質量份為佳。 而’幅射線固化性黏著劑層7 ’因應必要 如聚異氦動旨化合物等之固 配人景⑷矛讣馬田彳成分。固化劑之 Λ '目對於主成分之丙稀酸系聚合物_質量份,以 〇·5,質量份料佳。 wih以 是因==層7之料似丨抑㈣斷厚者為佳。這 厚時為:劑層”度太薄時,不能保持力叫 以5以防止性他則惡化的緣故。前述黏著劑之層厚係 .者更佳,又以5·心厚者最佳。 $冑塾9’係使用業㈣離型處理之聚對苯二甲酸乙 一 θ曰涛膜等。 態’以所謂純銅之金屬或氧化㈣成時, 使传對腐崎狀GMR型式之确不腐餘。 又,依本實施形態,帶電防止性能極高。 又依本實施型態,使帶電防止層與黏著劑間之密著 性優異。 本實把型態’在黏著劑層使用幅射線固化型毒占 20著劑,因此容易進行覆著物之再剝離。 依本實把型態’在半導體零件之切削或背面研削 處理中,對覆著體表面之影響亦少,亦可擴大利用範圍, 子;電子零件(硬碟等)及半導體製品之製造良率減少的防 止亦有效。 15 200944570 [實施例] 以下根據實施例,更詳細說明本發明,與比較例一同 顯示性能測試例’明示本發明之優異的效果,但本發明並 不限定於其等實施例者。 5 此外,以下有%者係顯示質量%。 在本實施例及比較例中,在黏著膠帶之黏著劑層使用 α 1、〇: 2、冷1等3種黏著劑。以下個別說明之。 黏著劑α 1係各具有含有幅射線固化性碳—碳雙鍵之 基、氫氧基、及含羧基之基之丙烯酸系共聚物,氫氧基值 翁 10 為 34mgKOH/g、酸值為6.6mg/KOH、碳雙鍵量為 0_9meq/g。 黏著劑α 1之100份配合固化劑1份、光聚合起始劑5份之比 例來調整黏著劑塗佈液。將業經調整之黏著劑塗佈液塗佈 - 在業經矽離型處理之聚對苯二曱酸乙二酯薄膜,形成所望 之厚度,與基材薄膜相貼合,製作黏著膠帶。 15 α 2係與α 1同樣,各具有含有幅射線固化性碳—碳雙 鍵之基、氫氧基、及含有羧基之基之丙烯酸系共聚物,但 氫氧基值為56mgKOH/g、酸值為〇.7mg/K〇H、碳雙鍵量為 © 0.6meq/g。於1〇〇份之黏著劑α2配合固化劑丨份光聚合起 始劑5份之比例來調整黏著劑塗佈液。與黏著劑“丨同樣進 20 行塗佈,製作黏著膠帶。 黏著劑/3 1係於主鏈不含幅射線固化性碳—碳雙鍵之 丙稀酸醋。以黏著劑W 100份、低丙烯酸醋15〇份、固化 劑4.2伤、光聚合起始劑5份之比例配合,調整黏著劑塗佈 液與黏著劑《 1同樣塗佈,製作黏著膠帶。 16 200944570 [實施例1] 使用厚度之聚稀煙薄_為基材,藉浸泡聚合 法,在這基材的兩面形成厚度0.05jam之聚吡咯系聚合物 層,形成帶電防止層。 5 10 在黏著劑CU配合光聚合起始劑及固化劑,調製黏著塗 佈液。滾輪塗佈機,以線速2m/分鐘,而在#__ 處理之聚對苯二曱紅二㈣膜(厚度25心)塗佈所調製 之黏著劑塗佈液’通過設定h1〇t之溫風乾燥爐,貼上具 有帶電防止層之基材薄膜’製作乾燥後之塗佈厚度為ι〇_ 之附有剝離襯塾之電子零件加卫用黏著膠帶。 [實施例2] 與實施例1同樣形成帶電防止層,在黏著劑α2配合光 聚合起始劑及固化劑’以與實施例(同樣之方法,製作乾燥 後之黏著劑層之塗佈厚度為且附有剝離槻墊之電子 15 零件加工用黏著膠帶。 [實施例3] 與實施例1同樣形成帶電防止層,在黏著齊⑷配合光 聚合起始劑及固化劑,以與實施例i同樣之方法,製作乾燥 後之黏著d層之塗佈厚度為3〇_且附有剝離概塾之電子 2〇 零件加工用黏著膠帶。 [實施例4] 將聚噻吩系導電性¥人队 π电Γ生V 口物利用凹版印刷塗佈機而在厚 度議^之聚稀煙薄膜進行塗佈以成為膜厚〇5心之 後开/成帶電防止層。在黏著劑“上配合光聚合起始劑及固 17 200944570 化劑,以與實施例1同樣之方法,製作乾燥後之黏著劑層之 塗佈厚度為30 // m且附有刻離概墊之電子零件加工用點著 膠帶。 [比較例1] 與實施例1同樣形成帶電防止層,在黏著劑万丨配合低 聚物、光聚合起始劑及固化劑,以與實施例丨同樣之方法, 製作乾燥後之黏著劑層之塗佈厚度為3〇# m且附有剝離襯 墊之電子零件加工用黏著膠帶。 [比較例2] 1〇 冑4級録鹽系界面活性劑利用凹版印刷塗佈機而在厚 度100"m之聚稀烴薄膜進行塗佈以形成膜厚丨抑爪,形成 帶電防止層。在黏著❹i配合低聚物、光聚合起始劑及固 化劑,以與實施例丨同樣之方法,製作乾燥後絲著劑居之 塗佈厚度為且附有剝離襯塾之電子零件加工 15 膜憨。 # [比較例3] 將4級鍵鹽系界面活性劑利用凹版印刷塗佈機而 度御m之聚_薄膜進行塗佈以形成膜厚心爪 帶電防止層。在黏著劑^配合光聚合起始劑及固: 20
與實施例旧樣之方法,製作賴後之黏著劑層之塗佈厚度 為30"m且附有剝離襯签之電子零件加工用黏著膠俄。 [比較例4] 將棚—氮絡合物系帶電防止劑利用凹版印刷塗佈機而 在厚度100/zm之聚稀煙薄膜進行塗佈以成為膜厚… 18 200944570 m,形成帶電防止層。在黏著劑/3 1配合光聚合起始劑及固 化劑,以與實施例1同樣之方法,製作乾燥後之黏著劑層之 塗佈厚度為30// m且附有剝離襯墊之電子零件加工用黏著 膠帶。 5 [黏著劑之酸值及氫氧基值之測定] 對於以上述方法所得到之黏著膠帶,進行酸值及氫氧 基值之測定。 酸值之測定係基於JIS K 5407之11.1進行。 〇 (a)試劑 10 •溴百里酚藍指示劑 • 0.01N氫氧化鉀一乙醇溶液 .丙酮試劑1級 • (b)操作 以三角量瓶正確地秤取約10g之試料,溶解在丙酮 15 50ml,加入3〜4滴的漠百里紛藍指示劑。以0.01N氫氧化钟 —乙醇溶液對此進行滴定。 . (c)計算 以下述式子求取酸值。 [數1] 酸值二 56.11xFx/ ~100x5~ V : 0.01N氫氧化鉀一乙醇溶液之滴定量(ml) f: 0.01N氫氧化鉀一乙醇溶液之因子 S.試料採取量 19 20 200944570 氫氧基值之測定則是基於JISK 0070而進行的。 (a) 試劑 •乙醯化試劑(醋酸酐一吡啶) • N/2氫氧化鉀一乙醇溶液 (b) 操作 以乙醯化試劑將試料乙醯化後,以N/2氫氧化鉀—乙醇 $液對過剩的醋酸進行滴定。
(c) 計算 以下述式子求取氫氧基值。 [數2] 氫氧基值=-(叹-r)xFx28.05 + #
S ❹ v :本測試之N/2氫氧化鉀一乙醇溶液之滴定量(ml) VB:空白測試之N/2氫氧化鉀—乙酵溶液之滴定量 F : N/2氫氧化鉀—乙醇溶液之因子 S :試料採取量(g) AV :試料的酸值(mgK〇H/g) [電子零件加工用黏著膠帶之性能測試] 對於以上述方法得到之黏著膠帶,進行(1)表面固有電 阻(2)帶電防止層—黏著劑層間之密著性之測定、⑶依浸 泡測定之腐蝕的確認、及(4)離子性雜質量的測定。 (1) 表面固有電阻 20 200944570 基於JIS K 6911,採用表面固有電阻測定儀(Advantest 公司製造;R— 8740)測定。 (2) 帶電防止層〜黏著劑層間之密著性 5 ❹ 10 15 參 20 利用第2圖,說明密著性之測試方法。首先,如第2(a) 圖所示’在架體13内貼上黏著膠帶丨,藉切割器形成圍棋盤 形格子且達黏著劑層7之厚度+ 1〇" m,而形成切紋u。各 圍棋盤形格子的大小是lcmx lcm。俟完全乾燥後,如第2(b) 圖所示,以2kg的貼合滾輪貼上黏著力約2〇N/25nmi之黏著 膠帶15。之後進行UV照射,再放置丨小時。這次的實驗中 的照射量為500mJ/m2。 其後,將貼合有黏著膠帶15及黏著膠帶丨之物切成寬 25mm、長10cm,如第2(c)圖所示,以角度180。、速度1〇〇〇 mm/min將黏著膠帶15由黏著膠帶丨剝開。計數由黏著膠帶i 在黏者膠帶15所剝離之黏著劑層7的個數,評價由帶層防止 層5之黏著劑層7之脫落。令完全沒有剝落者為〇%,全部剝 落者為100%。 (3) 依浸泡測定之腐蝕的確認 將黏著膠帶約lg作為試料並樣本化,剝除剝離襯塾。 使剝離襯塾已剝離之試料及由銅、氧化銘、鎳合金所構成 之磁頭—起浸泡到加入50ml純水之容器。之後,以6〇。〇加 熱1小時後’從溶液中取出磁頭,藉FE—SEM(電場幅射型 掃描式電子顯微鏡)以影像確認磁頭的腐蝕。所確認的磁頭 之個數係於任一種都是30個,30個磁頭中將有腐蝕之個數 記錄在表1。 21 200944570 (4) 依離子色譜測試所進行之離子性雜質量的測定 將涛膜約lg作為試料並樣本化後’加入純水5〇ml,加 熱到loot。利用離子色譜儀DX-120(曰本DIONEX公司製 造),對所擷取的溶液中所含之雜質量進行測定。 5 [實驗結果] 將實施例、比較例的結果匯整示於表1。 首先針對帶電防止層一黏著劑層間之密著性,帶電防 止劑為導電性聚合物外之比較例2及比較例3有5 0 %程度的 剝落,對此,對於使用導電性聚合物之實施例1〜4及比較例 © 10 1完全沒有看到剝落,但對於黏著材料的聚合方法不同之比 較例1,在磁頭有看到腐蝕。 針為作為帶電防止性能之指標之一的表面固有電阻, 比較實施例與實施例3時可知,表面固有電阻值是黏著劑厚 · 度較小的實施例1較低。又,黏著劑厚度較小者,其UV照 15射後之值是較優的結果。 在腐蝕測試中,在實施例丨〜4是沒看到腐蝕,或幾乎看 不到之結果,對此,對比較例1〜4,則有多數磁頭已腐蝕的 © 結果。 實施例1〜4,係於密著性優異,磁頭不腐#之事項為 20佳。又,實施例1係密著性優異,且磁頭不腐蝕,再加上表 面固有電阻值低,因此更佳。 22 200944570 [表i]
1 比較例4 Φ 丨给 1 1凹版印刷塗佈 1 1 O' ο "ο g 18.53 <0.001 比較例3 4級録鹽系 界面活性劑 凹版印刷塗佈 .. (N 〇 vo 〇 〇 0.59 ON "ο 寸 ο < 0.05 <0.001 1 比較例2 4級敍鹽系 界面活性劑 :凹版印刷塗佈 L 1 O' "ο s 1 <0.05 1 <0.001 比較例1 聚吡咯系 聚合物 浸泡聚合 1 1 1 O' 〇 (Ν *〇 ο <0.05 <0.001 實施例4 聚0S吩系 聚合物 凹版印刷塗佈 〇 VO vd 〇\ d Os 〇 "ο 〇 ο <0.05 <0.001 實施例3 聚°比洛系 聚合物 浸泡聚合 ΰ \〇 as d 〇\ 〇 <Ν "ο 〇 ο 1 <0.05 ; _1 <0.001 實施例2 聚0比0各系 聚合物 浸泡聚合 (Ν 〇 VO V) d 0.59 _1 卜 o οο ο ο 1 <0.05 _I <0.001 實施例1 聚0比洛系 聚合物 浸泡聚合 〇 O) d 卜 o 卜 ο ο <0.05 <0.001 帶電防止層 形成方法 黏著劑之種類 黏著劑厚度(//m) 氫氧基值(mgKOH/g) 酸值(mgKOH/g) 破雙鍵量(meq/g) _i ® □ ig 回一 « □ < G 11 1他 腐蝕(個) 層間剝離率(%) 氣化物離子量Ί (ppm) 氟離子量 (ppm) 23 200944570 又’針對表中所記載之實施例及比較例,全部使用凝 膠分率80%以上之聚合物。使用凝膠分率低於6〇%之聚合物 時,就會有變成不具保持力,在切削製程中使晶片偏移之 結果。 5 以上,一邊參照附圖,一邊說明本發明之黏著膠帶之 一較佳實施型態,但本發明不限定於該例。只要是該業者 (熟悉此項技藝之人士),在本申請案所揭示之技術思想範疇 内能想到各種變更或修正例是很清楚的,針對其等變更例 或修正例’亦了解是涵蓋於本發明之技術範圍内者。 10 【圖式簡單說明】 第1圖係本實施型態之黏著膠帶i之示意圖。 第2(a)-(c)圖係顯示本實施例之帶電防止層一黏著劑層 間之密著性之測定方法之圖。 【主要元件符號說明】 1...黏著膠帶 9…剝離襯墊 3...基材薄膜 11··.切紋 5...帶電防止層 13··.架體 7...黏著劑層 15.··黏著膠帶 24
Claims (1)
- 200944570 七、申請專利範圍: 1. 一種電子零件加工用黏著膠帶,係用以貼著含有金屬或 氧化鋁之電子零件者,包含有: 基材;及 形成在前述基材之一面之黏著劑層, 前述黏著劑層係以丙烯酸系共聚物作為主成分,該 丙烯酸系共聚物係一對於主鏈至少分別具有含幅射線 固化性碳-碳雙鍵之基、氫氧基、及含羧基之基者, β 前述丙烯酸系共聚物之主鏈之含幅射線固化性碳一 石炭雙鍵之基的比例為0.5〜2.0meq/g, 前述丙烯酸系共聚物之主鏈之氫氧基的比例為0.1〜 60mgKOH/g, ’ 前述丙烯酸系共聚物之主鏈之羧基的比例為0.5〜 10mgKOH/g, 前述丙烯酸系共聚物之凝膠分率為60%以上。 2. 如申請專利範圍第1項之電子零件加工用黏著膠帶,其中 前述基材具有形成於兩面或一面之帶電防止層。 3. 如申請專利範圍第2項之電子零件加工用黏著膠帶,其中 前述帶電防止層係使用導電性高分子,為7Γ電子共軛系 聚合物。 4. 如申請專利範圍第3項之電子零件加工用黏著膠帶,其中 前述導電性高分子係聚吼咯系聚合物。 5. 如申請專利範圍第3項之電子零件加工用黏著膠帶,其中 前述導電性高分子係聚噻吩系聚合物。 25 200944570 6. 如申請專利範圍第4或5項之電子零件加工用黏著膠帶, 其中前述帶電防止層之厚度為0.001〜2.0/zm。 7. 如申請專利範圍第6項之電子零件加工用黏著膠帶,其中 前述黏著劑層之厚度為1〜70// m。26
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TWI634190B (zh) * | 2016-06-30 | 2018-09-01 | 華殷高科技股份有限公司 | 半導體晶片半切割後的背面研削加工用紫外線硬化型黏合片 |
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JP2013209559A (ja) * | 2012-03-30 | 2013-10-10 | Furukawa Electric Co Ltd:The | 紫外線硬化性半導体デバイス加工用粘着テープ |
DE102012207173A1 (de) * | 2012-04-30 | 2013-10-31 | Evonik Degussa Gmbh | Beschichteter Metallgegenstand |
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JP2006182439A (ja) * | 2004-12-28 | 2006-07-13 | Daicel Polymer Ltd | 電子部品用樹脂シート及び電子部品包装用成形体 |
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CN103242754A (zh) * | 2012-02-10 | 2013-08-14 | 爱思开哈斯显示用薄膜有限公司 | 用于平板显示器的防止玻璃飞散的薄膜 |
CN103242754B (zh) * | 2012-02-10 | 2016-01-20 | 爱思开哈斯显示用薄膜有限公司 | 用于平板显示器的防止玻璃飞散的薄膜 |
TWI586529B (zh) * | 2012-02-10 | 2017-06-11 | Skc哈斯顯示膜股份有限公司 | 平板顯示器之玻璃分散防止膜 |
TWI634190B (zh) * | 2016-06-30 | 2018-09-01 | 華殷高科技股份有限公司 | 半導體晶片半切割後的背面研削加工用紫外線硬化型黏合片 |
TWI733847B (zh) * | 2016-06-30 | 2021-07-21 | 日商三井化學東賽璐股份有限公司 | 半導體晶圓加工用黏著性膜 |
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