TW200931448A - Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: Mg-containing additive - Google Patents

Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: Mg-containing additive Download PDF

Info

Publication number
TW200931448A
TW200931448A TW97140249A TW97140249A TW200931448A TW 200931448 A TW200931448 A TW 200931448A TW 97140249 A TW97140249 A TW 97140249A TW 97140249 A TW97140249 A TW 97140249A TW 200931448 A TW200931448 A TW 200931448A
Authority
TW
Taiwan
Prior art keywords
composition
glass
thick film
metal
silver
Prior art date
Application number
TW97140249A
Other languages
English (en)
Chinese (zh)
Inventor
Richard John Sheffield Young
Michael Rose
Kurt Richard Mikeska
Alan Frederick Carroll
Kenneth Warren Hang
Alistair Graeme Prince
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of TW200931448A publication Critical patent/TW200931448A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31536—Including interfacial reaction product of adjacent layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Glass Compositions (AREA)
  • Inorganic Insulating Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Electrodes Of Semiconductors (AREA)
TW97140249A 2007-10-18 2008-10-20 Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: Mg-containing additive TW200931448A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US98092407P 2007-10-18 2007-10-18

Publications (1)

Publication Number Publication Date
TW200931448A true TW200931448A (en) 2009-07-16

Family

ID=40294650

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97140249A TW200931448A (en) 2007-10-18 2008-10-20 Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: Mg-containing additive

Country Status (7)

Country Link
US (1) US7780878B2 (enExample)
EP (1) EP2193527A1 (enExample)
JP (1) JP2011502330A (enExample)
KR (1) KR20100080612A (enExample)
CN (1) CN101816045A (enExample)
TW (1) TW200931448A (enExample)
WO (1) WO2009052271A1 (enExample)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102251281B (zh) * 2006-03-01 2013-01-16 三菱瓦斯化学株式会社 采用液相生长法的ZnO单晶的制造方法
WO2009052266A1 (en) * 2007-10-18 2009-04-23 E. I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices: mg-containing additive
JP2011517117A (ja) * 2008-04-09 2011-05-26 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 伝導性組成物、および半導体デバイスの製造における使用方法
US8283559B2 (en) * 2009-04-09 2012-10-09 Silevo, Inc. Silicon-based dielectric stack passivation of Si-epitaxial thin-film solar cells
KR101144810B1 (ko) * 2009-07-06 2012-05-11 엘지전자 주식회사 태양전지용 전극 페이스트, 이를 이용한 태양전지, 및 태양전지의 제조방법
US9012766B2 (en) * 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
JP2013513974A (ja) * 2009-12-15 2013-04-22 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Mwtシリコン太陽電池の製造のプロセス
US8252204B2 (en) * 2009-12-18 2012-08-28 E I Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
KR101038967B1 (ko) 2009-12-21 2011-06-07 엘지전자 주식회사 태양 전지 및 그 제조 방법
CN102939271B (zh) * 2010-04-15 2016-08-03 费罗公司 低温熔化的无铅铋密封玻璃
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
JP5488282B2 (ja) * 2010-07-13 2014-05-14 昭栄化学工業株式会社 導電性ペースト
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9129725B2 (en) 2010-12-17 2015-09-08 E I Du Pont De Nemours And Company Conductive paste composition containing lithium, and articles made therefrom
US8486308B2 (en) 2010-12-17 2013-07-16 E I Du Pont De Nemours And Company Conductive paste composition containing lithium, and articles made therefrom
KR101941716B1 (ko) * 2011-02-22 2019-01-23 가디언 인더스트리즈 코퍼레이션. 바나듐-기초 프릿 물질 및 이를 제조하는 방법
US8802203B2 (en) 2011-02-22 2014-08-12 Guardian Industries Corp. Vanadium-based frit materials, and/or methods of making the same
US9309146B2 (en) 2011-02-22 2016-04-12 Guardian Industries Corp. Vanadium-based frit materials, binders, and/or solvents and methods of making the same
CN102097183B (zh) * 2011-02-24 2012-05-30 苏州晶银新材料股份有限公司 一种晶体硅太阳能电池正面电极用导电浆料的制备工艺
CN102280207B (zh) * 2011-05-30 2012-12-19 周涛 水热法制备有机氟掺杂硅太阳能电池用银浆工艺方法
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
CN103906718A (zh) * 2011-11-02 2014-07-02 费罗公司 使用低熔点玻璃系统的无机基体的微波密封
US20130224905A1 (en) * 2012-02-27 2013-08-29 E I Du Pont De Nemours And Company Silver paste and use thereof in the production of solar cells
CN102643615A (zh) * 2012-04-21 2012-08-22 湖南红太阳光电科技有限公司 一种晶体硅太阳能电池铝浆用无机粘结剂及其制备方法
JP2013243279A (ja) 2012-05-22 2013-12-05 Namics Corp 太陽電池の電極形成用導電性ペースト
CN102751000B (zh) * 2012-06-16 2015-05-06 合肥圣达电子科技实业公司 一种压电陶瓷用无铅无镉电极银浆料及其制备方法
CN102831958B (zh) * 2012-08-24 2014-09-10 合肥中南光电有限公司 无铅环保型晶体硅太阳能电池正面银浆及其制备方法
MX351564B (es) 2012-10-04 2017-10-18 Solarcity Corp Dispositivos fotovoltaicos con rejillas metálicas galvanizadas.
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
CN104737238A (zh) * 2012-10-19 2015-06-24 纳美仕有限公司 导电性浆料
CN103021567A (zh) * 2012-12-04 2013-04-03 彩虹集团公司 一种硅基太阳能用正面电极银浆的制备方法
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
CN104004454B (zh) * 2013-02-21 2015-11-25 西北稀有金属材料研究院 一种无机粘结材料的制备方法及由此得到的无机粘结材料
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US20160204303A1 (en) * 2013-08-21 2016-07-14 Gtat Corporation Using an active solder to couple a metallic article to a photovoltaic cell
US9761742B2 (en) * 2013-12-03 2017-09-12 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US9793025B2 (en) * 2013-12-03 2017-10-17 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
KR102302357B1 (ko) * 2014-03-20 2021-09-16 나믹스 가부시끼가이샤 도전성 페이스트, 적층 세라믹 부품, 프린트 배선판 및 전자 장치
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US10636540B2 (en) 2015-03-27 2020-04-28 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes comprising an oxide additive
US10056508B2 (en) 2015-03-27 2018-08-21 Heraeus Deutschland GmbH & Co. KG Electro-conductive pastes comprising a metal compound
US10784383B2 (en) * 2015-08-07 2020-09-22 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
EP4235773A3 (en) * 2018-09-07 2023-10-04 Ferro Corporation Conductive thick film paste for silicon nitride and other substrates
CN111533458A (zh) * 2020-05-11 2020-08-14 湖北格纳斯新材料有限公司 一种环保型光伏太阳能电子浆料用玻璃粉的制备方法
US11772406B2 (en) * 2021-01-25 2023-10-03 Xerox Corporation Printable unclonable function patterns

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060661A (en) * 1975-08-22 1977-11-29 Matsushita Electric Industrial Co., Ltd. Voltage-dependent resistor
NL7905817A (nl) * 1979-07-27 1981-01-29 Philips Nv Werkwijze voor het vervaardigen van een zonnecel.
US4416932A (en) * 1981-08-03 1983-11-22 E. I. Du Pont De Nemours And Company Thick film conductor compositions
US5011725A (en) * 1987-05-22 1991-04-30 Ceramics Process Systems Corp. Substrates with dense metal vias produced as co-sintered and porous back-filled vias
JPH0565456A (ja) 1991-09-09 1993-03-19 Sumitomo Bakelite Co Ltd 気密封止用樹脂ペースト
US5296413A (en) * 1991-12-03 1994-03-22 E. I. Du Pont De Nemours And Company Automotive glass thick film conductor paste
JPH06136298A (ja) * 1992-10-26 1994-05-17 Asahi Chem Ind Co Ltd 銅系内部導体を有する低温焼成多層回路基板外部導体用ペースト
JP3209089B2 (ja) * 1996-05-09 2001-09-17 昭栄化学工業株式会社 導電性ペースト
DE10116653A1 (de) * 2001-04-04 2002-10-10 Dmc2 Degussa Metals Catalysts Cerdec Ag Leitfähigkeitspaste, damit erzeugte Artikel mit einer leitfähigen Beschichtung auf Glas, Keramik und emailliertem Stahl und Verfahren zu deren Herstellung
KR100866220B1 (ko) * 2001-09-06 2008-10-30 가부시키가이샤 노리타케 캄파니 리미티드 도체 조성물 및 그 제조방법
US7435361B2 (en) 2005-04-14 2008-10-14 E.I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
US7494607B2 (en) * 2005-04-14 2009-02-24 E.I. Du Pont De Nemours And Company Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
US7611645B2 (en) * 2005-04-25 2009-11-03 E. I. Du Pont De Nemours And Company Thick film conductor compositions and the use thereof in LTCC circuits and devices
US20080203914A1 (en) * 2007-02-23 2008-08-28 Lg Electronics Inc. Plasma display panel and related technologies including method for manufacturing the same
JP2011501866A (ja) * 2007-10-18 2011-01-13 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 鉛フリーの伝導性組成物、および半導体デバイスの製造における使用方法:フラックス材料

Also Published As

Publication number Publication date
US20090101872A1 (en) 2009-04-23
WO2009052271A1 (en) 2009-04-23
US7780878B2 (en) 2010-08-24
EP2193527A1 (en) 2010-06-09
JP2011502330A (ja) 2011-01-20
CN101816045A (zh) 2010-08-25
KR20100080612A (ko) 2010-07-09

Similar Documents

Publication Publication Date Title
TWI342568B (en) Method of manufacture of semiconductor device and conductive compositions used therein
KR101207693B1 (ko) 반도체 소자의 제조에 사용하기 위한 무연 전도성 조성물 및 공정: 플럭스 재료
TW200931449A (en) Conductive compositions and processes for use in the manufacture of semiconductor devices: Mg-containing additive
JP5536761B2 (ja) 伝導性組成物、および半導体デバイスの製造における使用方法
TW200937450A (en) Conductive compositions and processes for use in the manufacture of semiconductor devices: flux materials
TW201013702A (en) Conductive compositions and processes for use in the manufacture of semiconductor devices
JP2011502330A (ja) 鉛フリーの伝導性組成物、および半導体デバイスの製造における使用方法:Mg含有添加剤
TW201005755A (en) Conductive compositions and processes for use in the manufacture of semiconductor devices
TW200933654A (en) Conductive compositions and processes for use in the manufacture of semiconductor devices: multiple busbars
KR20060108545A (ko) 전도성 조성물 및 반도체 소자의 제조에 사용하는 방법
CN1862839A (zh) 半导体器件的制造方法及其中用到的导电组合物
JP2010524257A (ja) 厚膜伝導性組成物、および半導体デバイスの製造における使用方法
TW201017688A (en) Conductive compositions and processes for use in the manufacture of semiconductor devices
WO2009052356A2 (en) Conductive compositions and processes for use in the manufacture of semiconductor devices