TW200921773A - Method for producing a semiconductor wafer with a polished edge - Google Patents
Method for producing a semiconductor wafer with a polished edge Download PDFInfo
- Publication number
- TW200921773A TW200921773A TW097143873A TW97143873A TW200921773A TW 200921773 A TW200921773 A TW 200921773A TW 097143873 A TW097143873 A TW 097143873A TW 97143873 A TW97143873 A TW 97143873A TW 200921773 A TW200921773 A TW 200921773A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- edge
- polished
- semiconductor wafer
- sided
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 238000005498 polishing Methods 0.000 claims abstract description 105
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000004744 fabric Substances 0.000 claims abstract description 22
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 2
- 235000002566 Capsicum Nutrition 0.000 claims 1
- 239000006002 Pepper Substances 0.000 claims 1
- 235000016761 Piper aduncum Nutrition 0.000 claims 1
- 235000017804 Piper guineense Nutrition 0.000 claims 1
- 244000203593 Piper nigrum Species 0.000 claims 1
- 235000008184 Piper nigrum Nutrition 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 22
- 239000002245 particle Substances 0.000 description 7
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 241000238631 Hexapoda Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007056122A DE102007056122A1 (de) | 2007-11-15 | 2007-11-15 | Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200921773A true TW200921773A (en) | 2009-05-16 |
Family
ID=40576892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097143873A TW200921773A (en) | 2007-11-15 | 2008-11-13 | Method for producing a semiconductor wafer with a polished edge |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090130960A1 (de) |
JP (1) | JP2009124153A (de) |
KR (1) | KR20090050939A (de) |
CN (1) | CN101434047A (de) |
DE (1) | DE102007056122A1 (de) |
SG (1) | SG152978A1 (de) |
TW (1) | TW200921773A (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI393183B (zh) * | 2009-06-24 | 2013-04-11 | Siltronic Ag | 雙面拋光半導體晶圓的方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010162624A (ja) * | 2009-01-13 | 2010-07-29 | Ebara Corp | 研磨装置および研磨方法 |
DE102009030295B4 (de) * | 2009-06-24 | 2014-05-08 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102009030294B4 (de) * | 2009-06-24 | 2013-04-25 | Siltronic Ag | Verfahren zur Politur der Kante einer Halbleiterscheibe |
DE102009030296B4 (de) * | 2009-06-24 | 2013-05-08 | Siltronic Ag | Verfahren zur Herstellung einer epitaxierten Siliciumscheibe |
DE102009051008B4 (de) * | 2009-10-28 | 2013-05-23 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102010014874A1 (de) * | 2010-04-14 | 2011-10-20 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
JP2012009550A (ja) * | 2010-06-23 | 2012-01-12 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2012019126A (ja) * | 2010-07-09 | 2012-01-26 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
DE102013204839A1 (de) * | 2013-03-19 | 2014-09-25 | Siltronic Ag | Verfahren zum Polieren einer Scheibe aus Halbleitermaterial |
DE102013210057A1 (de) | 2013-05-29 | 2014-12-04 | Siltronic Ag | Verfahren zur Politur der Kante einer Halbleiterscheibe |
CN104526493A (zh) * | 2014-11-18 | 2015-04-22 | 天津中环领先材料技术有限公司 | 一种单晶硅晶圆片边缘抛光工艺 |
CN108214110A (zh) * | 2016-12-14 | 2018-06-29 | 有研半导体材料有限公司 | 一种硅抛光片边缘加工工艺 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3828176B2 (ja) | 1995-02-28 | 2006-10-04 | コマツ電子金属株式会社 | 半導体ウェハの製造方法 |
TW308561B (de) * | 1995-08-24 | 1997-06-21 | Mutsubishi Gum Kk | |
JP2000077372A (ja) * | 1998-08-31 | 2000-03-14 | Sumitomo Metal Ind Ltd | 気相成長用半導体ウェーハの製造方法 |
JP2000114216A (ja) * | 1998-10-01 | 2000-04-21 | Sumitomo Metal Ind Ltd | 半導体ウェーハの製造方法 |
DE10007390B4 (de) | 1999-03-13 | 2008-11-13 | Peter Wolters Gmbh | Zweischeiben-Poliermaschine, insbesondere zur Bearbeitung von Halbleiterwafern |
US6299514B1 (en) * | 1999-03-13 | 2001-10-09 | Peter Wolters Werkzeugmachinen Gmbh | Double-disk polishing machine, particularly for tooling semiconductor wafers |
US6514423B1 (en) | 2000-02-22 | 2003-02-04 | Memc Electronic Materials, Inc. | Method for wafer processing |
JP2006142388A (ja) | 2004-11-16 | 2006-06-08 | Nihon Micro Coating Co Ltd | 研磨テープ及び方法 |
-
2007
- 2007-11-15 DE DE102007056122A patent/DE102007056122A1/de not_active Ceased
-
2008
- 2008-09-25 CN CNA2008101658380A patent/CN101434047A/zh active Pending
- 2008-09-26 SG SG200807234-0A patent/SG152978A1/en unknown
- 2008-10-16 KR KR1020080101577A patent/KR20090050939A/ko not_active Application Discontinuation
- 2008-10-31 US US12/262,202 patent/US20090130960A1/en not_active Abandoned
- 2008-11-13 TW TW097143873A patent/TW200921773A/zh unknown
- 2008-11-14 JP JP2008291653A patent/JP2009124153A/ja not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI393183B (zh) * | 2009-06-24 | 2013-04-11 | Siltronic Ag | 雙面拋光半導體晶圓的方法 |
Also Published As
Publication number | Publication date |
---|---|
DE102007056122A1 (de) | 2009-05-28 |
JP2009124153A (ja) | 2009-06-04 |
KR20090050939A (ko) | 2009-05-20 |
US20090130960A1 (en) | 2009-05-21 |
CN101434047A (zh) | 2009-05-20 |
SG152978A1 (en) | 2009-06-29 |
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