TW200921269A - Photo mask blank and method of manufacturing a photo mask - Google Patents

Photo mask blank and method of manufacturing a photo mask Download PDF

Info

Publication number
TW200921269A
TW200921269A TW097137415A TW97137415A TW200921269A TW 200921269 A TW200921269 A TW 200921269A TW 097137415 A TW097137415 A TW 097137415A TW 97137415 A TW97137415 A TW 97137415A TW 200921269 A TW200921269 A TW 200921269A
Authority
TW
Taiwan
Prior art keywords
light
shielding film
pattern
film
blank mask
Prior art date
Application number
TW097137415A
Other languages
English (en)
Chinese (zh)
Inventor
Morio Hosoya
Osamu Nozawa
Toshiyuki Suzuki
Atsushi Kominato
Yasushi Okubo
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200921269A publication Critical patent/TW200921269A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW097137415A 2007-09-30 2008-09-30 Photo mask blank and method of manufacturing a photo mask TW200921269A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007256997A JP5242110B2 (ja) 2007-09-30 2007-09-30 フォトマスクブランク、フォトマスク及びその製造方法、並びに半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200921269A true TW200921269A (en) 2009-05-16

Family

ID=40526073

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097137415A TW200921269A (en) 2007-09-30 2008-09-30 Photo mask blank and method of manufacturing a photo mask

Country Status (4)

Country Link
JP (1) JP5242110B2 (ja)
KR (1) KR101319311B1 (ja)
TW (1) TW200921269A (ja)
WO (1) WO2009044645A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9017902B2 (en) 2009-06-18 2015-04-28 Hoya Corporation Mask blank, transfer mask, and method of manufacturing a transfer mask
JP5154626B2 (ja) * 2010-09-30 2013-02-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP2014191176A (ja) * 2013-03-27 2014-10-06 Dainippon Printing Co Ltd フォトマスクブランクス、フォトマスク及びその製造方法
JP5775631B2 (ja) * 2014-08-06 2015-09-09 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP6528877B2 (ja) * 2018-03-14 2019-06-12 信越化学工業株式会社 フォトマスクブランクの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4535240B2 (ja) * 2004-03-31 2010-09-01 凸版印刷株式会社 ハーフトーン型位相シフトマスク用ブランク、ハーフトーン型位相シフトマスク及びパターン転写方法
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
KR100864375B1 (ko) * 2006-01-03 2008-10-21 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토마스크의 제조방법
JP2008052120A (ja) * 2006-08-25 2008-03-06 Hoya Corp マスクブランク及びフォトマスク並びにこれらの製造方法

Also Published As

Publication number Publication date
JP2009086389A (ja) 2009-04-23
KR20100050547A (ko) 2010-05-13
JP5242110B2 (ja) 2013-07-24
WO2009044645A1 (ja) 2009-04-09
KR101319311B1 (ko) 2013-10-16

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