WO2009044645A1 - フォトマスクブランク及びフォトマスクの製造方法 - Google Patents

フォトマスクブランク及びフォトマスクの製造方法 Download PDF

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Publication number
WO2009044645A1
WO2009044645A1 PCT/JP2008/067094 JP2008067094W WO2009044645A1 WO 2009044645 A1 WO2009044645 A1 WO 2009044645A1 JP 2008067094 W JP2008067094 W JP 2008067094W WO 2009044645 A1 WO2009044645 A1 WO 2009044645A1
Authority
WO
WIPO (PCT)
Prior art keywords
photomask
blocking film
light blocking
metal
photomask blank
Prior art date
Application number
PCT/JP2008/067094
Other languages
English (en)
French (fr)
Inventor
Morio Hosoya
Osamu Nozawa
Toshiyuki Suzuki
Atsushi Kominato
Yasushi Okubo
Original Assignee
Hoya Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corporation filed Critical Hoya Corporation
Priority to KR1020107004993A priority Critical patent/KR101319311B1/ko
Publication of WO2009044645A1 publication Critical patent/WO2009044645A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

　パターン転写時の露光装置に高ＮＡの露光方法を利用した場合の焦点深度による影響に対応でき、デバイス上にハーフピッチ４５ｎｍ以下の高精度の微細パターンを形成するのに好適な遮光膜を備えたフォトマスクブランク及びフォトマスクの製造方法を提供する。 　透光性基板１上に遮光膜２を有するフォトマスクブランク１０であって、前記遮光膜２は、金属と珪素（Ｓｉ）を含み、該金属の含有量が、金属と珪素（Ｓｉ）との合計に対し６原子％未満である。また、このフォトマスクブランク１０における上記遮光膜２をドライエッチング処理によりパターニングすることにより、フォトマスクを製造する。
PCT/JP2008/067094 2007-09-30 2008-09-22 フォトマスクブランク及びフォトマスクの製造方法 WO2009044645A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020107004993A KR101319311B1 (ko) 2007-09-30 2008-09-22 포토마스크 블랭크 및 포토마스크의 제조방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007256997A JP5242110B2 (ja) 2007-09-30 2007-09-30 フォトマスクブランク、フォトマスク及びその製造方法、並びに半導体装置の製造方法
JP2007-256997 2007-09-30

Publications (1)

Publication Number Publication Date
WO2009044645A1 true WO2009044645A1 (ja) 2009-04-09

Family

ID=40526073

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067094 WO2009044645A1 (ja) 2007-09-30 2008-09-22 フォトマスクブランク及びフォトマスクの製造方法

Country Status (4)

Country Link
JP (1) JP5242110B2 (ja)
KR (1) KR101319311B1 (ja)
TW (1) TW200921269A (ja)
WO (1) WO2009044645A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9017902B2 (en) 2009-06-18 2015-04-28 Hoya Corporation Mask blank, transfer mask, and method of manufacturing a transfer mask
JP5154626B2 (ja) * 2010-09-30 2013-02-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP2014191176A (ja) * 2013-03-27 2014-10-06 Dainippon Printing Co Ltd フォトマスクブランクス、フォトマスク及びその製造方法
JP5775631B2 (ja) * 2014-08-06 2015-09-09 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP6528877B2 (ja) * 2018-03-14 2019-06-12 信越化学工業株式会社 フォトマスクブランクの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005292162A (ja) * 2004-03-31 2005-10-20 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランク、ハーフトーン型位相シフトマスク及びパターン転写方法
JP2006078807A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスク
JP2008052120A (ja) * 2006-08-25 2008-03-06 Hoya Corp マスクブランク及びフォトマスク並びにこれらの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100864375B1 (ko) * 2006-01-03 2008-10-21 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토마스크의 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005292162A (ja) * 2004-03-31 2005-10-20 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランク、ハーフトーン型位相シフトマスク及びパターン転写方法
JP2006078807A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスク
JP2008052120A (ja) * 2006-08-25 2008-03-06 Hoya Corp マスクブランク及びフォトマスク並びにこれらの製造方法

Also Published As

Publication number Publication date
JP2009086389A (ja) 2009-04-23
KR20100050547A (ko) 2010-05-13
JP5242110B2 (ja) 2013-07-24
TW200921269A (en) 2009-05-16
KR101319311B1 (ko) 2013-10-16

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