TW200915624A - Radiation-emitting component - Google Patents

Radiation-emitting component Download PDF

Info

Publication number
TW200915624A
TW200915624A TW097131452A TW97131452A TW200915624A TW 200915624 A TW200915624 A TW 200915624A TW 097131452 A TW097131452 A TW 097131452A TW 97131452 A TW97131452 A TW 97131452A TW 200915624 A TW200915624 A TW 200915624A
Authority
TW
Taiwan
Prior art keywords
layer
radiation
electromagnetic
emitting component
semiconductor layer
Prior art date
Application number
TW097131452A
Other languages
English (en)
Chinese (zh)
Inventor
Stefan Grotsch
Jan Marfeld
Jorg Sorg
Moritz Engl
Steffen Kohler
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200915624A publication Critical patent/TW200915624A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW097131452A 2007-09-21 2008-08-18 Radiation-emitting component TW200915624A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007045087 2007-09-21
DE102008005344A DE102008005344A1 (de) 2007-09-21 2008-01-21 Strahlungsemittierendes Bauelement

Publications (1)

Publication Number Publication Date
TW200915624A true TW200915624A (en) 2009-04-01

Family

ID=40384494

Family Applications (2)

Application Number Title Priority Date Filing Date
TW097131452A TW200915624A (en) 2007-09-21 2008-08-18 Radiation-emitting component
TW101124292A TWI473297B (zh) 2007-09-21 2008-08-18 輻射發射組件

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW101124292A TWI473297B (zh) 2007-09-21 2008-08-18 輻射發射組件

Country Status (8)

Country Link
US (2) US8373186B2 (enExample)
EP (1) EP2198464B1 (enExample)
JP (1) JP5362727B2 (enExample)
KR (1) KR101460388B1 (enExample)
CN (2) CN102347417B (enExample)
DE (1) DE102008005344A1 (enExample)
TW (2) TW200915624A (enExample)
WO (1) WO2009036731A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012100788A1 (de) * 2012-01-31 2013-08-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit Konverterelement
CN103633223B (zh) * 2013-11-13 2016-08-17 苏州热驰光电科技有限公司 高光透玻璃基板led照明装置及其制备方法
WO2016079658A1 (en) * 2014-11-18 2016-05-26 Industries Yifei Wang Inc. Led module, methods of manufacturing same and luminaire integrating same
KR20260096884A (ko) * 2019-05-14 2026-06-24 에이엠에스-오스람 인터내셔널 게엠베하 광전자 부품, 픽셀, 디스플레이 조립체, 및 방법
KR20240133228A (ko) * 2023-02-28 2024-09-04 삼성전자주식회사 반도체 발광 소자
CN116344707A (zh) * 2023-03-20 2023-06-27 华灿光电（浙江）有限公司 改善发光亮度的发光二极管及其制备方法
CN120214069B (zh) * 2025-05-23 2025-08-22 上海聚跃检测技术有限公司 一种半导体晶圆表面的芯片检测方法及系统

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145519A (ja) 1997-09-02 1999-05-28 Toshiba Corp 半導体発光素子、半導体発光装置および画像表示装置
US6878563B2 (en) * 2000-04-26 2005-04-12 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US7075112B2 (en) * 2001-01-31 2006-07-11 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
US6630689B2 (en) * 2001-05-09 2003-10-07 Lumileds Lighting, U.S. Llc Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
KR101173198B1 (ko) 2002-12-25 2012-08-10 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 발광소자장치, 수광소자장치, 광학장치, 플루오르화물결정, 플루오르화물 결정의 제조방법 및 도가니
US7087936B2 (en) 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
FR2861853B1 (fr) 2003-10-30 2006-02-24 Soitec Silicon On Insulator Substrat avec adaptation d'indice
JP2005157313A (ja) * 2003-10-30 2005-06-16 Arisawa Mfg Co Ltd リアプロジェクションディスプレイ用スクリーン
TW200602585A (en) * 2004-03-16 2006-01-16 Koninkl Philips Electronics Nv High brightness illumination device with incoherent solid state light source
JP2006093602A (ja) * 2004-09-27 2006-04-06 Toyoda Gosei Co Ltd 発光素子
DE102004047727B4 (de) * 2004-09-30 2018-01-18 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer Konverterschicht und Verfahren zur Herstellung eines Lumineszenzdiodenchips mit einer Konverterschicht
DE102004047640A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement
WO2006040704A1 (en) * 2004-10-12 2006-04-20 Philips Intellectual Property & Standards Gmbh Electroluminescent light source
TWI239671B (en) * 2004-12-30 2005-09-11 Ind Tech Res Inst LED applied with omnidirectional reflector
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
JP2006261540A (ja) * 2005-03-18 2006-09-28 Stanley Electric Co Ltd 発光デバイス
JP4996101B2 (ja) * 2006-02-02 2012-08-08 新光電気工業株式会社 半導体装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
EP2198464B1 (de) 2016-11-16
US8963181B2 (en) 2015-02-24
CN102347417A (zh) 2012-02-08
JP5362727B2 (ja) 2013-12-11
WO2009036731A2 (de) 2009-03-26
JP2010539715A (ja) 2010-12-16
US8373186B2 (en) 2013-02-12
TW201242078A (en) 2012-10-16
CN102347417B (zh) 2014-10-01
DE102008005344A1 (de) 2009-04-02
US20130146919A1 (en) 2013-06-13
TWI473297B (zh) 2015-02-11
KR20100055357A (ko) 2010-05-26
US20100207148A1 (en) 2010-08-19
WO2009036731A3 (de) 2009-05-28
KR101460388B1 (ko) 2014-11-10
CN101803048A (zh) 2010-08-11
CN101803048B (zh) 2011-12-21
EP2198464A2 (de) 2010-06-23

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